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SG144883A1 - Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials - Google Patents

Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials

Info

Publication number
SG144883A1
SG144883A1 SG200800768-4A SG2008007684A SG144883A1 SG 144883 A1 SG144883 A1 SG 144883A1 SG 2008007684 A SG2008007684 A SG 2008007684A SG 144883 A1 SG144883 A1 SG 144883A1
Authority
SG
Singapore
Prior art keywords
materials
semiconductor substrate
linear accelerator
region
thickness
Prior art date
Application number
SG200800768-4A
Inventor
Francois J Henley
Original Assignee
Silicon Genesis Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Genesis Corp filed Critical Silicon Genesis Corp
Publication of SG144883A1 publication Critical patent/SG144883A1/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

METHOD AND STRUCTURE USING SELECTED IMPLANT ANGLES USING A LINEAR ACCELERATOR PROCESS FOR MANUFACTURE OF FREE STANDING FILMS OF MATERIALS A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. In a specific embodiment, the present method includes providing a semiconductor substrate having a surface region and a thickness. The method includes subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles provided at a first implant angle generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. In a specific embodiment, the method includes subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles at a second implant angle generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level. In a preferred embodiment, the semiconductor substrate is maintained at a second temperature, which is higher than the first temperature. The method frees the thickness of detachable material using a cleaving process, e.g., controlled cleaving process
SG200800768-4A 2007-01-29 2008-01-28 Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials SG144883A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88708607P 2007-01-29 2007-01-29

Publications (1)

Publication Number Publication Date
SG144883A1 true SG144883A1 (en) 2008-08-28

Family

ID=39710884

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200800768-4A SG144883A1 (en) 2007-01-29 2008-01-28 Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials

Country Status (3)

Country Link
JP (1) JP2008244435A (en)
CN (1) CN101236895B (en)
SG (1) SG144883A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8133800B2 (en) * 2008-08-29 2012-03-13 Silicon Genesis Corporation Free-standing thickness of single crystal material and method having carrier lifetimes
CN102381688A (en) * 2011-09-06 2012-03-21 武汉科技大学 Concentrated sulfuric acid preparation method using hydrogen sulfide in manufactured gas
FR2988516B1 (en) * 2012-03-23 2014-03-07 Soitec Silicon On Insulator IMPROVING IMPROVING METHOD FOR ENHANCED SUBSTRATES
FR2993095B1 (en) * 2012-07-03 2014-08-08 Commissariat Energie Atomique DETACHMENT OF A SILICON-FREE LAYER <100>
JP6539959B2 (en) * 2014-08-28 2019-07-10 株式会社Sumco Epitaxial silicon wafer, method of manufacturing the same, and method of manufacturing solid-state imaging device
JP6665932B2 (en) * 2016-06-24 2020-03-13 富士電機株式会社 Semiconductor device manufacturing method and semiconductor device
CN108461555A (en) * 2018-02-05 2018-08-28 宇泰（江西）新能源有限公司 A kind of monocrystalline Silicon photrouics with Surface Texture structure
SG11202009989YA (en) * 2018-04-27 2020-11-27 Globalwafers Co Ltd Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184111B1 (en) * 1998-06-23 2001-02-06 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
WO2001011930A2 (en) * 1999-08-10 2001-02-15 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6544862B1 (en) * 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
US7312125B1 (en) * 2004-02-05 2007-12-25 Advanced Micro Devices, Inc. Fully depleted strained semiconductor on insulator transistor and method of making the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7273800B2 (en) * 2004-11-01 2007-09-25 International Business Machines Corporation Hetero-integrated strained silicon n- and p-MOSFETs
US7148124B1 (en) * 2004-11-18 2006-12-12 Alexander Yuri Usenko Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184111B1 (en) * 1998-06-23 2001-02-06 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
WO2001011930A2 (en) * 1999-08-10 2001-02-15 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US20030124815A1 (en) * 1999-08-10 2003-07-03 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US20060166472A1 (en) * 1999-08-10 2006-07-27 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6544862B1 (en) * 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
US7312125B1 (en) * 2004-02-05 2007-12-25 Advanced Micro Devices, Inc. Fully depleted strained semiconductor on insulator transistor and method of making the same

Also Published As

Publication number Publication date
JP2008244435A (en) 2008-10-09
CN101236895B (en) 2011-05-04
CN101236895A (en) 2008-08-06

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