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SG11201912030PA - Mask blank, phase shift mask and method for manufacturing semiconductor device - Google Patents

Mask blank, phase shift mask and method for manufacturing semiconductor device

Info

Publication number
SG11201912030PA
SG11201912030PA SG11201912030PA SG11201912030PA SG11201912030PA SG 11201912030P A SG11201912030P A SG 11201912030PA SG 11201912030P A SG11201912030P A SG 11201912030PA SG 11201912030P A SG11201912030P A SG 11201912030PA SG 11201912030P A SG11201912030P A SG 11201912030PA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
phase shift
manufacturing semiconductor
mask blank
Prior art date
Application number
SG11201912030PA
Inventor
Masahiro Hashimoto
Hiroaki Shishido
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201912030PA publication Critical patent/SG11201912030PA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/58Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
SG11201912030PA 2017-06-14 2018-05-16 Mask blank, phase shift mask and method for manufacturing semiconductor device SG11201912030PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017116510 2017-06-14
PCT/JP2018/018872 WO2018230233A1 (en) 2017-06-14 2018-05-16 Mask blank, phase shift mask and method for producing semiconductor device

Publications (1)

Publication Number Publication Date
SG11201912030PA true SG11201912030PA (en) 2020-01-30

Family

ID=64660555

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201912030PA SG11201912030PA (en) 2017-06-14 2018-05-16 Mask blank, phase shift mask and method for manufacturing semiconductor device
SG10202103395QA SG10202103395QA (en) 2017-06-14 2018-05-16 Mask blank, method for producing transfer mask and method for producing semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202103395QA SG10202103395QA (en) 2017-06-14 2018-05-16 Mask blank, method for producing transfer mask and method for producing semiconductor device

Country Status (7)

Country Link
US (2) US11048160B2 (en)
JP (2) JP6506449B2 (en)
KR (1) KR102592274B1 (en)
CN (1) CN110770652B (en)
SG (2) SG11201912030PA (en)
TW (2) TWI744533B (en)
WO (1) WO2018230233A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7303077B2 (en) * 2019-09-10 2023-07-04 アルバック成膜株式会社 Method for manufacturing mask blanks, method for manufacturing photomask, mask blanks and photomask
TWI707195B (en) * 2020-02-14 2020-10-11 力晶積成電子製造股份有限公司 Method of manufacturing phase-shifting photomask
JP7354032B2 (en) * 2020-03-19 2023-10-02 Hoya株式会社 Mask blank, transfer mask, and semiconductor device manufacturing method
CN112666789B (en) * 2020-12-02 2024-05-24 湖南普照信息材料有限公司 Attenuation type high-uniformity phase shift photomask blank and preparation method thereof
JP7375065B2 (en) * 2022-02-24 2023-11-07 Hoya株式会社 Mask blank, transfer mask manufacturing method, and display device manufacturing method

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3445329B2 (en) 1993-11-02 2003-09-08 Hoya株式会社 Halftone type phase shift mask and halftone type phase shift mask blank
WO2004090635A1 (en) 2003-04-09 2004-10-21 Hoya Corporation Method of producing photomask and photomask blank
TWI375114B (en) 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
JP4405443B2 (en) * 2004-10-22 2010-01-27 信越化学工業株式会社 Photomask blank, photomask, and manufacturing method thereof
DE602006021102D1 (en) * 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomask blank, photomask and their manufacturing process
JP4764214B2 (en) * 2006-03-10 2011-08-31 凸版印刷株式会社 Halftone phase shift mask and manufacturing method thereof
JP4509050B2 (en) 2006-03-10 2010-07-21 信越化学工業株式会社 Photomask blank and photomask
KR100972860B1 (en) * 2007-09-18 2010-07-28 주식회사 하이닉스반도체 Method for fabricating in photo mask
JP2009265508A (en) 2008-04-28 2009-11-12 Sharp Corp Photomask, method of correcting photomask, method of correcting photomask shape, method of manufacturing photomask and exposure transfer method
JP5702920B2 (en) * 2008-06-25 2015-04-15 Hoya株式会社 Phase shift mask blank, phase shift mask, and method of manufacturing phase shift mask blank
JP5558359B2 (en) * 2008-09-30 2014-07-23 Hoya株式会社 Photomask blank, photomask and method for manufacturing the same, and method for manufacturing a semiconductor device
JP5653888B2 (en) * 2010-12-17 2015-01-14 Hoya株式会社 Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method
JP6058318B2 (en) 2011-09-14 2017-01-11 Hoya株式会社 Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method
US9494852B2 (en) * 2012-07-13 2016-11-15 Hoya Corporation Mask blank and method of manufacturing phase shift mask
JP6324756B2 (en) * 2013-03-19 2018-05-16 Hoya株式会社 Phase shift mask blank and method for manufacturing the same, method for manufacturing phase shift mask, and method for manufacturing display device
JP5686216B1 (en) 2013-08-20 2015-03-18 大日本印刷株式会社 Mask blank, phase shift mask, and manufacturing method thereof
KR102046729B1 (en) 2013-09-24 2019-11-19 호야 가부시키가이샤 Mask blank, transfer mask, and method for manufacturing semiconductor device
JP6229466B2 (en) * 2013-12-06 2017-11-15 信越化学工業株式会社 Photomask blank
KR101504557B1 (en) 2014-03-23 2015-03-20 주식회사 에스앤에스텍 Blankmask and Photomask using the same
JP6544943B2 (en) * 2014-03-28 2019-07-17 Hoya株式会社 Mask blank, method of manufacturing phase shift mask, phase shift mask, and method of manufacturing semiconductor device
JP5779290B1 (en) * 2014-03-28 2015-09-16 Hoya株式会社 Mask blank, phase shift mask manufacturing method, phase shift mask, and semiconductor device manufacturing method
JP6292581B2 (en) * 2014-03-30 2018-03-14 Hoya株式会社 Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method
JP6150299B2 (en) * 2014-03-30 2017-06-21 Hoya株式会社 Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method
JP6104852B2 (en) * 2014-07-14 2017-03-29 Hoya株式会社 Mask blank manufacturing method, phase shift mask manufacturing method, and semiconductor device manufacturing method
WO2016103843A1 (en) * 2014-12-26 2016-06-30 Hoya株式会社 Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
JP6544964B2 (en) * 2015-03-31 2019-07-17 Hoya株式会社 Mask blank, method of manufacturing phase shift mask, and method of manufacturing semiconductor device
JP6477159B2 (en) * 2015-03-31 2019-03-06 信越化学工業株式会社 Halftone phase shift mask blank and method of manufacturing halftone phase shift mask blank
JP6087401B2 (en) * 2015-08-14 2017-03-01 Hoya株式会社 Mask blank, phase shift mask, and semiconductor device manufacturing method
TWI684822B (en) * 2015-09-30 2020-02-11 日商Hoya股份有限公司 Blank mask, phase shift mask and method for manufacturing semiconductor element
JP6271780B2 (en) * 2017-02-01 2018-01-31 Hoya株式会社 Mask blank, phase shift mask, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
TW201921090A (en) 2019-06-01
TWI744533B (en) 2021-11-01
JP2019133178A (en) 2019-08-08
US20210149293A1 (en) 2021-05-20
KR20200017399A (en) 2020-02-18
SG10202103395QA (en) 2021-05-28
CN110770652B (en) 2023-03-21
KR102592274B1 (en) 2023-10-23
JP2019003178A (en) 2019-01-10
JP6506449B2 (en) 2019-04-24
CN110770652A (en) 2020-02-07
JP7029423B2 (en) 2022-03-03
US20210286254A1 (en) 2021-09-16
US11048160B2 (en) 2021-06-29
TW202205006A (en) 2022-02-01
WO2018230233A1 (en) 2018-12-20
TWI784733B (en) 2022-11-21

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