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SG11201803333RA - Method for manufacturing a hybrid structure - Google Patents

Method for manufacturing a hybrid structure

Info

Publication number
SG11201803333RA
SG11201803333RA SG11201803333RA SG11201803333RA SG11201803333RA SG 11201803333R A SG11201803333R A SG 11201803333RA SG 11201803333R A SG11201803333R A SG 11201803333RA SG 11201803333R A SG11201803333R A SG 11201803333RA SG 11201803333R A SG11201803333R A SG 11201803333RA
Authority
SG
Singapore
Prior art keywords
manufacturing
hybrid structure
hybrid
Prior art date
Application number
SG11201803333RA
Inventor
Didier Landru
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201803333RA publication Critical patent/SG11201803333RA/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02574Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/50Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/508Piezoelectric or electrostrictive devices having a stacked or multilayer structure adapted for alleviating internal stress, e.g. cracking control layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/704Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/88Mounts; Supports; Enclosures; Casings

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
SG11201803333RA 2015-10-20 2016-10-17 Method for manufacturing a hybrid structure SG11201803333RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1559993A FR3042649B1 (en) 2015-10-20 2015-10-20 METHOD FOR MANUFACTURING A HYBRID STRUCTURE
PCT/FR2016/052674 WO2017068269A1 (en) 2015-10-20 2016-10-17 Method for manufacturing a hybrid structure

Publications (1)

Publication Number Publication Date
SG11201803333RA true SG11201803333RA (en) 2018-05-30

Family

ID=54848787

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201803333RA SG11201803333RA (en) 2015-10-20 2016-10-17 Method for manufacturing a hybrid structure

Country Status (8)

Country Link
US (3) US11349065B2 (en)
EP (1) EP3365929B1 (en)
JP (3) JP6985260B2 (en)
KR (1) KR102639433B1 (en)
CN (1) CN108292699B (en)
FR (1) FR3042649B1 (en)
SG (1) SG11201803333RA (en)
WO (1) WO2017068269A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3042649B1 (en) * 2015-10-20 2019-06-21 Soitec METHOD FOR MANUFACTURING A HYBRID STRUCTURE
WO2021060513A1 (en) * 2019-09-27 2021-04-01 株式会社村田製作所 Elastic wave device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2848116B2 (en) * 1992-05-26 1999-01-20 松下電器産業株式会社 Quartz blank processing method
US5759753A (en) * 1995-07-19 1998-06-02 Matsushita Electric Industrial Co., Ltd. Piezoelectric device and method of manufacturing the same
US20020158947A1 (en) * 2001-04-27 2002-10-31 Isaku Kanno Piezoelectric element, method for manufacturing piezoelectric element, and ink jet head and ink jet recording apparatus having piezoelectric element
JP2004186868A (en) * 2002-12-02 2004-07-02 Fujitsu Media Device Kk Surface acoustic wave element, transmission filter and reception filter provided therewith, and duplexer including them
US20080203137A1 (en) * 2007-02-28 2008-08-28 International Business Machines Corporation Substrate bonding methods and system including monitoring
JP4821834B2 (en) 2008-10-31 2011-11-24 株式会社村田製作所 Method for manufacturing piezoelectric composite substrate
DE112010002512B4 (en) 2009-03-27 2024-03-14 Rigaku Corp. X-ray generating device and examination device using the same
JP5359615B2 (en) * 2009-07-02 2013-12-04 株式会社村田製作所 Manufacturing method of composite substrate
WO2011073716A1 (en) 2009-12-15 2011-06-23 S.O.I. Tec Silicon On Insulator Technologies Process for recycling a substrate.
KR101623099B1 (en) 2010-12-24 2016-05-20 가부시키가이샤 무라타 세이사쿠쇼 Elastic wave device and production method thereof
JP5796316B2 (en) * 2011-03-22 2015-10-21 株式会社村田製作所 Method for manufacturing piezoelectric device
DE112013003488B4 (en) 2012-07-12 2021-08-19 Ngk Insulators, Ltd. COMPOSITE SUBSTRATE, PIEZOELECTRIC DEVICE, AND METHOD FOR MANUFACTURING A COMPOSITE SUBSTRATE
CN103765773B (en) * 2012-08-17 2015-11-25 日本碍子株式会社 The manufacture method of composite base plate, elastic surface wave device and composite base plate
CN103947110B (en) * 2012-11-14 2016-08-17 日本碍子株式会社 Composite base plate
JP2014147054A (en) * 2013-01-30 2014-08-14 Sumitomo Electric Ind Ltd Piezoelectric substrate and surface acoustic wave element
DE112014000888T5 (en) * 2013-02-19 2015-11-26 Ngk Insulators, Ltd. Composite substrate, elastic wave device and method of manufacturing an elastic wave device
KR101514193B1 (en) * 2013-03-27 2015-04-21 엔지케이 인슐레이터 엘티디 Composite substrate and elastic wave device
KR102256902B1 (en) * 2013-07-25 2021-05-28 엔지케이 인슐레이터 엘티디 Composite board and method for making same
US10103317B2 (en) * 2015-01-05 2018-10-16 Inston, Inc. Systems and methods for implementing efficient magnetoelectric junctions
FR3042649B1 (en) * 2015-10-20 2019-06-21 Soitec METHOD FOR MANUFACTURING A HYBRID STRUCTURE
EP3196952B1 (en) * 2016-01-21 2019-06-19 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Mems piezoelectric transducer formed at a pcb support structure

Also Published As

Publication number Publication date
JP2024022682A (en) 2024-02-16
WO2017068269A1 (en) 2017-04-27
JP2022043057A (en) 2022-03-15
CN108292699B (en) 2021-06-29
KR102639433B1 (en) 2024-02-23
EP3365929B1 (en) 2019-09-25
FR3042649A1 (en) 2017-04-21
US20240147864A1 (en) 2024-05-02
EP3365929A1 (en) 2018-08-29
FR3042649B1 (en) 2019-06-21
US20220278269A1 (en) 2022-09-01
JP2018534863A (en) 2018-11-22
US11349065B2 (en) 2022-05-31
JP6985260B2 (en) 2021-12-22
US20180309045A1 (en) 2018-10-25
US11930710B2 (en) 2024-03-12
KR20180074702A (en) 2018-07-03
CN108292699A (en) 2018-07-17

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