SG11201803333RA - Method for manufacturing a hybrid structure - Google Patents
Method for manufacturing a hybrid structureInfo
- Publication number
- SG11201803333RA SG11201803333RA SG11201803333RA SG11201803333RA SG11201803333RA SG 11201803333R A SG11201803333R A SG 11201803333RA SG 11201803333R A SG11201803333R A SG 11201803333RA SG 11201803333R A SG11201803333R A SG 11201803333RA SG 11201803333R A SG11201803333R A SG 11201803333RA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- hybrid structure
- hybrid
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
- H10N30/508—Piezoelectric or electrostrictive devices having a stacked or multilayer structure adapted for alleviating internal stress, e.g. cracking control layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1559993A FR3042649B1 (en) | 2015-10-20 | 2015-10-20 | METHOD FOR MANUFACTURING A HYBRID STRUCTURE |
PCT/FR2016/052674 WO2017068269A1 (en) | 2015-10-20 | 2016-10-17 | Method for manufacturing a hybrid structure |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201803333RA true SG11201803333RA (en) | 2018-05-30 |
Family
ID=54848787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201803333RA SG11201803333RA (en) | 2015-10-20 | 2016-10-17 | Method for manufacturing a hybrid structure |
Country Status (8)
Country | Link |
---|---|
US (3) | US11349065B2 (en) |
EP (1) | EP3365929B1 (en) |
JP (3) | JP6985260B2 (en) |
KR (1) | KR102639433B1 (en) |
CN (1) | CN108292699B (en) |
FR (1) | FR3042649B1 (en) |
SG (1) | SG11201803333RA (en) |
WO (1) | WO2017068269A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3042649B1 (en) * | 2015-10-20 | 2019-06-21 | Soitec | METHOD FOR MANUFACTURING A HYBRID STRUCTURE |
WO2021060513A1 (en) * | 2019-09-27 | 2021-04-01 | 株式会社村田製作所 | Elastic wave device |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2848116B2 (en) * | 1992-05-26 | 1999-01-20 | 松下電器産業株式会社 | Quartz blank processing method |
US5759753A (en) * | 1995-07-19 | 1998-06-02 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device and method of manufacturing the same |
US20020158947A1 (en) * | 2001-04-27 | 2002-10-31 | Isaku Kanno | Piezoelectric element, method for manufacturing piezoelectric element, and ink jet head and ink jet recording apparatus having piezoelectric element |
JP2004186868A (en) * | 2002-12-02 | 2004-07-02 | Fujitsu Media Device Kk | Surface acoustic wave element, transmission filter and reception filter provided therewith, and duplexer including them |
US20080203137A1 (en) * | 2007-02-28 | 2008-08-28 | International Business Machines Corporation | Substrate bonding methods and system including monitoring |
JP4821834B2 (en) | 2008-10-31 | 2011-11-24 | 株式会社村田製作所 | Method for manufacturing piezoelectric composite substrate |
DE112010002512B4 (en) | 2009-03-27 | 2024-03-14 | Rigaku Corp. | X-ray generating device and examination device using the same |
JP5359615B2 (en) * | 2009-07-02 | 2013-12-04 | 株式会社村田製作所 | Manufacturing method of composite substrate |
WO2011073716A1 (en) | 2009-12-15 | 2011-06-23 | S.O.I. Tec Silicon On Insulator Technologies | Process for recycling a substrate. |
KR101623099B1 (en) | 2010-12-24 | 2016-05-20 | 가부시키가이샤 무라타 세이사쿠쇼 | Elastic wave device and production method thereof |
JP5796316B2 (en) * | 2011-03-22 | 2015-10-21 | 株式会社村田製作所 | Method for manufacturing piezoelectric device |
DE112013003488B4 (en) | 2012-07-12 | 2021-08-19 | Ngk Insulators, Ltd. | COMPOSITE SUBSTRATE, PIEZOELECTRIC DEVICE, AND METHOD FOR MANUFACTURING A COMPOSITE SUBSTRATE |
CN103765773B (en) * | 2012-08-17 | 2015-11-25 | 日本碍子株式会社 | The manufacture method of composite base plate, elastic surface wave device and composite base plate |
CN103947110B (en) * | 2012-11-14 | 2016-08-17 | 日本碍子株式会社 | Composite base plate |
JP2014147054A (en) * | 2013-01-30 | 2014-08-14 | Sumitomo Electric Ind Ltd | Piezoelectric substrate and surface acoustic wave element |
DE112014000888T5 (en) * | 2013-02-19 | 2015-11-26 | Ngk Insulators, Ltd. | Composite substrate, elastic wave device and method of manufacturing an elastic wave device |
KR101514193B1 (en) * | 2013-03-27 | 2015-04-21 | 엔지케이 인슐레이터 엘티디 | Composite substrate and elastic wave device |
KR102256902B1 (en) * | 2013-07-25 | 2021-05-28 | 엔지케이 인슐레이터 엘티디 | Composite board and method for making same |
US10103317B2 (en) * | 2015-01-05 | 2018-10-16 | Inston, Inc. | Systems and methods for implementing efficient magnetoelectric junctions |
FR3042649B1 (en) * | 2015-10-20 | 2019-06-21 | Soitec | METHOD FOR MANUFACTURING A HYBRID STRUCTURE |
EP3196952B1 (en) * | 2016-01-21 | 2019-06-19 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Mems piezoelectric transducer formed at a pcb support structure |
-
2015
- 2015-10-20 FR FR1559993A patent/FR3042649B1/en active Active
-
2016
- 2016-10-17 CN CN201680067866.1A patent/CN108292699B/en active Active
- 2016-10-17 SG SG11201803333RA patent/SG11201803333RA/en unknown
- 2016-10-17 KR KR1020187013180A patent/KR102639433B1/en active IP Right Grant
- 2016-10-17 EP EP16795121.9A patent/EP3365929B1/en active Active
- 2016-10-17 US US15/769,690 patent/US11349065B2/en active Active
- 2016-10-17 JP JP2018520188A patent/JP6985260B2/en active Active
- 2016-10-17 WO PCT/FR2016/052674 patent/WO2017068269A1/en active Application Filing
-
2021
- 2021-11-25 JP JP2021191041A patent/JP2022043057A/en active Pending
-
2022
- 2022-05-16 US US17/663,569 patent/US11930710B2/en active Active
-
2023
- 2023-12-18 JP JP2023213109A patent/JP2024022682A/en active Pending
-
2024
- 2024-01-03 US US18/403,485 patent/US20240147864A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2024022682A (en) | 2024-02-16 |
WO2017068269A1 (en) | 2017-04-27 |
JP2022043057A (en) | 2022-03-15 |
CN108292699B (en) | 2021-06-29 |
KR102639433B1 (en) | 2024-02-23 |
EP3365929B1 (en) | 2019-09-25 |
FR3042649A1 (en) | 2017-04-21 |
US20240147864A1 (en) | 2024-05-02 |
EP3365929A1 (en) | 2018-08-29 |
FR3042649B1 (en) | 2019-06-21 |
US20220278269A1 (en) | 2022-09-01 |
JP2018534863A (en) | 2018-11-22 |
US11349065B2 (en) | 2022-05-31 |
JP6985260B2 (en) | 2021-12-22 |
US20180309045A1 (en) | 2018-10-25 |
US11930710B2 (en) | 2024-03-12 |
KR20180074702A (en) | 2018-07-03 |
CN108292699A (en) | 2018-07-17 |
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