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SG11201607629UA - Memory arrays and methods of forming memory arrays - Google Patents

Memory arrays and methods of forming memory arrays

Info

Publication number
SG11201607629UA
SG11201607629UA SG11201607629UA SG11201607629UA SG11201607629UA SG 11201607629U A SG11201607629U A SG 11201607629UA SG 11201607629U A SG11201607629U A SG 11201607629UA SG 11201607629U A SG11201607629U A SG 11201607629UA SG 11201607629U A SG11201607629U A SG 11201607629UA
Authority
SG
Singapore
Prior art keywords
memory arrays
methods
forming
forming memory
arrays
Prior art date
Application number
SG11201607629UA
Inventor
Mattia Boniardi
Andrea Redaelli
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201607629UA publication Critical patent/SG11201607629UA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H10N70/235—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
SG11201607629UA 2014-03-26 2014-12-29 Memory arrays and methods of forming memory arrays SG11201607629UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/226,643 US9312481B2 (en) 2014-03-26 2014-03-26 Memory arrays and methods of forming memory arrays
PCT/US2014/072584 WO2015147940A1 (en) 2014-03-26 2014-12-29 Memory arrays and methods of forming memory arrays

Publications (1)

Publication Number Publication Date
SG11201607629UA true SG11201607629UA (en) 2016-10-28

Family

ID=54191581

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201607629UA SG11201607629UA (en) 2014-03-26 2014-12-29 Memory arrays and methods of forming memory arrays

Country Status (6)

Country Link
US (2) US9312481B2 (en)
KR (1) KR101891017B1 (en)
CN (1) CN106133840B (en)
SG (1) SG11201607629UA (en)
TW (1) TWI549226B (en)
WO (1) WO2015147940A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9112150B2 (en) 2013-07-23 2015-08-18 Micron Technology, Inc. Methods of forming memory cells and arrays
CN104966717B (en) * 2014-01-24 2018-04-13 旺宏电子股份有限公司 A kind of storage arrangement and the method that the storage arrangement is provided
US9312481B2 (en) * 2014-03-26 2016-04-12 Micron Technology, Inc. Memory arrays and methods of forming memory arrays
US9425298B2 (en) * 2015-01-22 2016-08-23 International Business Machines Corporation Lateral bipolar transistor
KR20170099216A (en) 2016-02-23 2017-08-31 삼성전자주식회사 memory device and method of manufacturing the same
US10269804B2 (en) 2016-05-11 2019-04-23 Micron Technology, Inc. Array of cross point memory cells and methods of forming an array of cross point memory cells
EP3261141A1 (en) * 2016-06-24 2017-12-27 STMicroelectronics Srl Phase-change memory cell, and method for manufacturing the phase-change memory cell
US10381305B2 (en) * 2017-08-29 2019-08-13 Micron Technology, Inc. Integrated assemblies having structures along a first pitch coupled with structures along a second pitch different from the first pitch, and methods of forming integrated assemblies
FR3073318A1 (en) * 2017-11-09 2019-05-10 Stmicroelectronics (Crolles 2) Sas MEMORY POINT A PHASE CHANGE MATERIAL
US10833059B2 (en) * 2018-12-07 2020-11-10 Micron Technology, Inc. Integrated assemblies comprising vertically-stacked decks of memory arrays
KR102630957B1 (en) * 2018-12-19 2024-01-31 에스케이하이닉스 주식회사 Memory device and electronic device including the same
US11380842B2 (en) 2019-07-18 2022-07-05 International Business Machines Corporation Phase change memory cell with second conductive layer
FR3112018A1 (en) * 2020-06-30 2021-12-31 Stmicroelectronics (Rousset) Sas Phase change memory cell isolation
WO2022104505A1 (en) * 2020-11-17 2022-05-27 Yangtze Advanced Memory Industrial Innovation Center Co., Ltd A novel gap fill and cell structure for improved selector thermal reliability for 3d pcm
CN112951994B (en) * 2021-03-11 2023-07-18 长江先进存储产业创新中心有限责任公司 Three-dimensional memory and method for forming heat dissipation pipeline

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6579760B1 (en) 2002-03-28 2003-06-17 Macronix International Co., Ltd. Self-aligned, programmable phase change memory
US7488967B2 (en) 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
US7696503B2 (en) * 2005-06-17 2010-04-13 Macronix International Co., Ltd. Multi-level memory cell having phase change element and asymmetrical thermal boundary
US7601995B2 (en) * 2005-10-27 2009-10-13 Infineon Technologies Ag Integrated circuit having resistive memory cells
US7714315B2 (en) * 2006-02-07 2010-05-11 Qimonda North America Corp. Thermal isolation of phase change memory cells
US20110057161A1 (en) 2009-09-10 2011-03-10 Gurtej Sandhu Thermally shielded resistive memory element for low programming current
KR101094985B1 (en) * 2010-04-30 2011-12-20 주식회사 하이닉스반도체 Phase Change Memory Device And Method of Manufacturing Same
US8648326B2 (en) 2011-07-27 2014-02-11 International Business Machines Corporation Phase change memory electrode with sheath for reduced programming current
US20130087756A1 (en) 2011-10-07 2013-04-11 International Business Machines Corporation Heat shield liner in a phase change memory cell
KR20130131707A (en) * 2012-05-24 2013-12-04 에스케이하이닉스 주식회사 Resistive memory device and fabrication method thereof
US9312481B2 (en) 2014-03-26 2016-04-12 Micron Technology, Inc. Memory arrays and methods of forming memory arrays

Also Published As

Publication number Publication date
US9312481B2 (en) 2016-04-12
US9461246B2 (en) 2016-10-04
KR101891017B1 (en) 2018-08-22
WO2015147940A1 (en) 2015-10-01
CN106133840B (en) 2019-02-19
TWI549226B (en) 2016-09-11
US20150280117A1 (en) 2015-10-01
US20160190443A1 (en) 2016-06-30
KR20160134797A (en) 2016-11-23
CN106133840A (en) 2016-11-16
TW201537685A (en) 2015-10-01

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