SG11201405091TA - Polishing agent, polishing agent set, and substrate polishing method - Google Patents
Polishing agent, polishing agent set, and substrate polishing methodInfo
- Publication number
- SG11201405091TA SG11201405091TA SG11201405091TA SG11201405091TA SG11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- polishing agent
- substrate
- agent
- agent set
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 3
- 239000003795 chemical substances by application Substances 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012035432 | 2012-02-21 | ||
| PCT/JP2013/053559 WO2013125446A1 (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201405091TA true SG11201405091TA (en) | 2014-09-26 |
Family
ID=49005633
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201606827RA SG10201606827RA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
| SG11201405091TA SG11201405091TA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201606827RA SG10201606827RA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10557058B2 (en) |
| JP (1) | JP6044630B2 (en) |
| KR (1) | KR102005132B1 (en) |
| CN (3) | CN108831830B (en) |
| SG (2) | SG10201606827RA (en) |
| TW (1) | TWI550045B (en) |
| WO (1) | WO2013125446A1 (en) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201501334RA (en) * | 2012-08-30 | 2015-05-28 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set and method for polishing base |
| US9566685B2 (en) | 2013-02-21 | 2017-02-14 | Fujimi Incorporated | Polishing composition and method for producing polished article |
| US10717899B2 (en) | 2013-03-19 | 2020-07-21 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
| EP2977423B1 (en) | 2013-03-19 | 2022-09-28 | Fujimi Incorporated | Polishing composition |
| SG11201508398TA (en) * | 2013-06-07 | 2015-11-27 | Fujimi Inc | Silicon wafer polishing composition |
| US10155886B2 (en) | 2013-06-12 | 2018-12-18 | Hitachi Chemical Company, Ltd. | Polishing liquid for CMP, and polishing method |
| US9778122B2 (en) | 2013-08-01 | 2017-10-03 | Mts Systems Corporation | Two-axis sensor body for a load transducer |
| US10591373B2 (en) | 2013-08-01 | 2020-03-17 | Mts Systems Corporation | Load transducer having a biasing assembly |
| KR102245055B1 (en) * | 2013-08-30 | 2021-04-26 | 쇼와덴코머티리얼즈가부시끼가이샤 | Slurry, polishing solution set, polishing solution, substrate polishing method, and substrate |
| KR102517248B1 (en) * | 2013-09-10 | 2023-04-03 | 가부시끼가이샤 레조낙 | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
| KR101405333B1 (en) * | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | Abrasive particles, polishing slurry and method of manufacturing a semiconductor device using the same |
| WO2015052988A1 (en) * | 2013-10-10 | 2015-04-16 | 日立化成株式会社 | Polishing agent, polishing agent set and method for polishing base |
| US10030172B2 (en) | 2013-12-26 | 2018-07-24 | Hitachi Chemical Company, Ltd. | Abrasive, abrasive set, and method for polishing substrate |
| JP6349852B2 (en) * | 2014-03-27 | 2018-07-04 | 日立化成株式会社 | Abrasive, stock solution for abrasive, and polishing method |
| JP6569191B2 (en) * | 2014-06-10 | 2019-09-04 | 日立化成株式会社 | Abrasive, abrasive set, and substrate polishing method |
| JP6268069B2 (en) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | Polishing composition and polishing method |
| US20160181435A1 (en) * | 2014-12-22 | 2016-06-23 | Wafertech, Llc | Floating gate transistors and method for forming the same |
| SG11201705202PA (en) * | 2014-12-26 | 2017-07-28 | Kao Corp | Polishing solution composition for silicon oxide film polishing |
| US9505952B2 (en) | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
| US10414947B2 (en) | 2015-03-05 | 2019-09-17 | Cabot Microelectronics Corporation | Polishing composition containing ceria particles and method of use |
| US9758697B2 (en) | 2015-03-05 | 2017-09-12 | Cabot Microelectronics Corporation | Polishing composition containing cationic polymer additive |
| TWI666308B (en) * | 2015-06-26 | 2019-07-21 | 日商日立化成股份有限公司 | Abrasive, storage solution for abrasive, and grinding method |
| KR102628333B1 (en) * | 2015-09-09 | 2024-01-22 | 가부시끼가이샤 레조낙 | Polishing liquid, polishing liquid set, and base polishing method |
| US10432461B2 (en) * | 2015-12-04 | 2019-10-01 | T-Mobile Usa, Inc. | Peer-to-peer distribution of radio protocol data for software defined radio (SDR) updates |
| WO2018142516A1 (en) * | 2017-02-01 | 2018-08-09 | 日立化成株式会社 | Polishing fluid, polishing fluid set, and polishing method |
| US11078380B2 (en) * | 2017-07-10 | 2021-08-03 | Entegris, Inc. | Hard abrasive particle-free polishing of hard materials |
| US10316218B2 (en) * | 2017-08-30 | 2019-06-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
| KR20230134157A (en) * | 2017-09-29 | 2023-09-20 | 가부시끼가이샤 레조낙 | Polishing solution, polishing solution set, and polishing method |
| JP7176225B2 (en) * | 2018-04-27 | 2022-11-22 | 昭和電工マテリアルズ株式会社 | Polishing liquid, polishing liquid set and polishing method |
| CN114193328A (en) * | 2020-09-18 | 2022-03-18 | 中国科学院微电子研究所 | Polishing agent container and polishing agent supply method |
| WO2024073209A1 (en) * | 2022-09-30 | 2024-04-04 | Versum Materials Us, Llc | Modified water-soluble polysaccharides having different cation types for slurries in chemical mechanical planarization |
Family Cites Families (79)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3123452A (en) | 1964-03-03 | Glass polish and process of polishing | ||
| US3097083A (en) | 1959-07-02 | 1963-07-09 | American Potash & Chem Corp | Polishing composition and process of forming same |
| BR9104844A (en) | 1991-11-06 | 1993-05-11 | Solvay | PROCESS FOR THE SELECTIVE EXTRACTION OF CERIO FROM AN Aqueous SOLUTION OF ELEMENTS FROM RARE LANDS |
| FR2684662B1 (en) | 1991-12-09 | 1994-05-06 | Rhone Poulenc Chimie | COMPOSITION BASED ON CERIC OXIDE, PREPARATION AND USE. |
| FR2714370B1 (en) | 1993-12-24 | 1996-03-08 | Rhone Poulenc Chimie | Precursor of a composition and composition based on a mixed oxide of cerium and zirconium, method of preparation and use. |
| JP3278532B2 (en) | 1994-07-08 | 2002-04-30 | 株式会社東芝 | Method for manufacturing semiconductor device |
| KR100336598B1 (en) | 1996-02-07 | 2002-05-16 | 이사오 우치가사키 | A Cerium Oxide Particle for the Preparation of a Cerium Oxide Abrasive |
| JPH09270402A (en) | 1996-03-29 | 1997-10-14 | Hitachi Chem Co Ltd | Cerium oxide abraisives and method of manufacturing substrate |
| JPH10154672A (en) | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | Cerium oxide abrasive material and polishing method of substrate |
| JPH10106993A (en) * | 1996-09-30 | 1998-04-24 | Hitachi Chem Co Ltd | Polishing method of substrate |
| US6221118B1 (en) | 1996-09-30 | 2001-04-24 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive and method of polishing substrates |
| US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| JPH10106994A (en) | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | Cerium oxide abrasive agent and polishing method of substrate |
| AU6116098A (en) | 1997-03-03 | 1998-09-22 | Nissan Chemical Industries Ltd. | Process for producing composite sols, coating composition, and optical member |
| JP2000160138A (en) | 1998-12-01 | 2000-06-13 | Fujimi Inc | Grinding composition |
| JP3992402B2 (en) | 1999-05-25 | 2007-10-17 | 株式会社コーセー | Ultraviolet screening agent comprising metal oxide solid solution cerium oxide, resin composition and cosmetic containing the same |
| TW593674B (en) | 1999-09-14 | 2004-06-21 | Jsr Corp | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
| JP2002241739A (en) | 2001-02-20 | 2002-08-28 | Hitachi Chem Co Ltd | Polishing agent and method for polishing substrate |
| EP1369906B1 (en) | 2001-02-20 | 2012-06-27 | Hitachi Chemical Company, Ltd. | Polishing compound and method for polishing substrate |
| JP2002329688A (en) | 2001-02-28 | 2002-11-15 | Kyoeisha Chem Co Ltd | Polishing suspension containing moisture holding agent |
| JP4231632B2 (en) | 2001-04-27 | 2009-03-04 | 花王株式会社 | Polishing liquid composition |
| US6599813B2 (en) * | 2001-06-29 | 2003-07-29 | International Business Machines Corporation | Method of forming shallow trench isolation for thin silicon-on-insulator substrates |
| US20050050803A1 (en) | 2001-10-31 | 2005-03-10 | Jin Amanokura | Polishing fluid and polishing method |
| JP4083502B2 (en) | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | Polishing method and polishing composition used therefor |
| JP3782771B2 (en) | 2002-11-06 | 2006-06-07 | ユシロ化学工業株式会社 | Abrasive grain and method for producing abrasive |
| US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| EP1580802A4 (en) | 2002-12-31 | 2007-03-28 | Sumco Corp | Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry composition |
| US8075800B2 (en) | 2003-05-28 | 2011-12-13 | Hitachi Chemical Co., Ltd. | Polishing slurry and polishing method |
| US20050028450A1 (en) | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
| TWI286567B (en) | 2003-09-12 | 2007-09-11 | Hitachi Chemical Co Ltd | Cerium salt and fabricating method thereof, cerium oxide and cerium polishing agent |
| US20050056810A1 (en) | 2003-09-17 | 2005-03-17 | Jinru Bian | Polishing composition for semiconductor wafers |
| TW200526768A (en) | 2003-09-30 | 2005-08-16 | Fujimi Inc | Polishing composition and polishing method |
| US7563383B2 (en) | 2004-10-12 | 2009-07-21 | Cabot Mircroelectronics Corporation | CMP composition with a polymer additive for polishing noble metals |
| JP5013671B2 (en) | 2004-12-28 | 2012-08-29 | 日揮触媒化成株式会社 | Method for producing metal oxide sol and metal oxide sol |
| JP2006249129A (en) | 2005-03-08 | 2006-09-21 | Hitachi Chem Co Ltd | Method for producing polishing agent and polishing agent |
| US20060278614A1 (en) | 2005-06-08 | 2006-12-14 | Cabot Microelectronics Corporation | Polishing composition and method for defect improvement by reduced particle stiction on copper surface |
| US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| KR20070041330A (en) | 2005-10-14 | 2007-04-18 | 가오가부시끼가이샤 | Polishing composition for a semiconductor substrate |
| JP4872919B2 (en) | 2005-11-11 | 2012-02-08 | 日立化成工業株式会社 | Polishing agent for silicon oxide, additive liquid and polishing method |
| WO2007119775A1 (en) | 2006-04-14 | 2007-10-25 | Showa Denko K.K. | Method of processing glass base and rinse composition for glass base processing |
| SG136886A1 (en) | 2006-04-28 | 2007-11-29 | Asahi Glass Co Ltd | Method for producing glass substrate for magnetic disk, and magnetic disk |
| JP2008091524A (en) * | 2006-09-29 | 2008-04-17 | Fujifilm Corp | Polishing solution for metal |
| JP2008112990A (en) | 2006-10-04 | 2008-05-15 | Hitachi Chem Co Ltd | Polishing agent and method for polishing substrate |
| FR2906800B1 (en) | 2006-10-09 | 2008-11-28 | Rhodia Recherches & Tech | LIQUID SUSPENSION AND POWDER OF CERIUM OXIDE PARTICLES, PROCESSES FOR PREPARING THE SAME, AND USE IN POLISHING |
| JP5381701B2 (en) | 2007-02-27 | 2014-01-08 | 日立化成株式会社 | Polishing liquid for metal and polishing method |
| CN101652324B (en) * | 2007-05-03 | 2012-05-30 | 株式会社Lg化学 | Cerium oxide powder for abrasive and CMP slurry containing the same |
| JP5281758B2 (en) | 2007-05-24 | 2013-09-04 | ユシロ化学工業株式会社 | Polishing composition |
| JP4294710B2 (en) | 2007-09-13 | 2009-07-15 | 三井金属鉱業株式会社 | Cerium oxide and method for producing the same |
| JP2009099819A (en) | 2007-10-18 | 2009-05-07 | Daicel Chem Ind Ltd | Polishing composition for cmp, and method of manufacturing device wafer using the polishing composition for cmp |
| JP5444625B2 (en) | 2008-03-05 | 2014-03-19 | 日立化成株式会社 | CMP polishing liquid, substrate polishing method, and electronic component |
| CN102766407B (en) * | 2008-04-23 | 2016-04-27 | 日立化成株式会社 | Abrasive and use the substrate Ginding process of this abrasive |
| JP5287174B2 (en) | 2008-04-30 | 2013-09-11 | 日立化成株式会社 | Abrasive and polishing method |
| US8383003B2 (en) | 2008-06-20 | 2013-02-26 | Nexplanar Corporation | Polishing systems |
| JP5403957B2 (en) | 2008-07-01 | 2014-01-29 | 花王株式会社 | Polishing liquid composition |
| US20100107509A1 (en) | 2008-11-04 | 2010-05-06 | Guiselin Olivier L | Coated abrasive article for polishing or lapping applications and system and method for producing the same. |
| JP5499556B2 (en) | 2008-11-11 | 2014-05-21 | 日立化成株式会社 | Slurry and polishing liquid set, and substrate polishing method and substrate using CMP polishing liquid obtained therefrom |
| JP2010153782A (en) | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | Polishing method for substrate |
| JP2010153781A (en) | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | Polishing method for substrate |
| WO2010067844A1 (en) | 2008-12-11 | 2010-06-17 | 日立化成工業株式会社 | Polishing solution for cmp and polishing method using the polishing solution |
| JP5355099B2 (en) | 2009-01-08 | 2013-11-27 | ニッタ・ハース株式会社 | Polishing composition |
| WO2010143579A1 (en) | 2009-06-09 | 2010-12-16 | 日立化成工業株式会社 | Abrasive slurry, abrasive set, and method for grinding substrate |
| JP2011171689A (en) * | 2009-07-07 | 2011-09-01 | Kao Corp | Polishing liquid composition for silicon wafer |
| JP5781287B2 (en) | 2009-10-01 | 2015-09-16 | ニッタ・ハース株式会社 | Polishing composition |
| KR101172647B1 (en) | 2009-10-22 | 2012-08-08 | 히다치 가세고교 가부시끼가이샤 | Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate |
| JP2011142284A (en) | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp polishing liquid, method of polishing substrate, and electronic component |
| TWI472601B (en) | 2009-12-31 | 2015-02-11 | Cheil Ind Inc | Chemical mechanical polishing slurry compositions and polishing method using the same |
| KR101443468B1 (en) | 2010-03-12 | 2014-09-22 | 히타치가세이가부시끼가이샤 | Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same |
| JP5648567B2 (en) | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Polishing liquid for CMP and polishing method using the same |
| KR20130129400A (en) * | 2010-11-22 | 2013-11-28 | 히타치가세이가부시끼가이샤 | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
| CN103497732B (en) | 2010-11-22 | 2016-08-10 | 日立化成株式会社 | The set agent of suspension, lapping liquid, lapping liquid, the Ginding process of substrate and substrate |
| KR101243331B1 (en) | 2010-12-17 | 2013-03-13 | 솔브레인 주식회사 | Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor device by using the same |
| CN102408836A (en) | 2011-10-20 | 2012-04-11 | 天津理工大学 | Nano polishing solution for titanium oxide film chemical mechanical planarization and application |
| KR102004570B1 (en) * | 2012-02-21 | 2019-07-26 | 히타치가세이가부시끼가이샤 | Abrasive, abrasive set, and method for abrading substrate |
| US9932497B2 (en) * | 2012-05-22 | 2018-04-03 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| US9346978B2 (en) * | 2012-05-22 | 2016-05-24 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| KR102034328B1 (en) * | 2012-05-22 | 2019-10-18 | 히타치가세이가부시끼가이샤 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| CN104321852B (en) * | 2012-05-22 | 2016-12-28 | 日立化成株式会社 | The set agent of suspension, lapping liquid, lapping liquid, the Ginding process of matrix and matrix |
| KR102245055B1 (en) * | 2013-08-30 | 2021-04-26 | 쇼와덴코머티리얼즈가부시끼가이샤 | Slurry, polishing solution set, polishing solution, substrate polishing method, and substrate |
| KR102517248B1 (en) * | 2013-09-10 | 2023-04-03 | 가부시끼가이샤 레조낙 | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
-
2013
- 2013-02-14 SG SG10201606827RA patent/SG10201606827RA/en unknown
- 2013-02-14 CN CN201810916995.4A patent/CN108831830B/en active Active
- 2013-02-14 JP JP2014500686A patent/JP6044630B2/en active Active
- 2013-02-14 CN CN201710996717.XA patent/CN107617968A/en active Pending
- 2013-02-14 SG SG11201405091TA patent/SG11201405091TA/en unknown
- 2013-02-14 WO PCT/JP2013/053559 patent/WO2013125446A1/en active Application Filing
- 2013-02-14 KR KR1020147024760A patent/KR102005132B1/en active IP Right Grant
- 2013-02-14 US US14/379,954 patent/US10557058B2/en active Active
- 2013-02-14 CN CN201380010364.1A patent/CN104137232A/en active Pending
- 2013-02-20 TW TW102105885A patent/TWI550045B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140129092A (en) | 2014-11-06 |
| CN104137232A (en) | 2014-11-05 |
| JP6044630B2 (en) | 2016-12-14 |
| CN107617968A (en) | 2018-01-23 |
| SG10201606827RA (en) | 2016-10-28 |
| US20150017806A1 (en) | 2015-01-15 |
| US10557058B2 (en) | 2020-02-11 |
| TW201343825A (en) | 2013-11-01 |
| TWI550045B (en) | 2016-09-21 |
| CN108831830A (en) | 2018-11-16 |
| WO2013125446A1 (en) | 2013-08-29 |
| KR102005132B1 (en) | 2019-07-29 |
| JPWO2013125446A1 (en) | 2015-07-30 |
| CN108831830B (en) | 2024-05-17 |
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