SG10201911258WA - Electronic device - Google Patents
Electronic deviceInfo
- Publication number
- SG10201911258WA SG10201911258WA SG10201911258WA SG10201911258WA SG10201911258WA SG 10201911258W A SG10201911258W A SG 10201911258WA SG 10201911258W A SG10201911258W A SG 10201911258WA SG 10201911258W A SG10201911258W A SG 10201911258WA SG 10201911258W A SG10201911258W A SG 10201911258WA
- Authority
- SG
- Singapore
- Prior art keywords
- electronic device
- electronic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F15/00—Digital computers in general; Data processing equipment in general
- G06F15/76—Architectures of general purpose stored program computers
- G06F15/78—Architectures of general purpose stored program computers comprising a single central processing unit
- G06F15/7839—Architectures of general purpose stored program computers comprising a single central processing unit with memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
- H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0073—Write using bi-directional cell biasing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190077102A KR102724927B1 (en) | 2019-06-27 | Electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201911258WA true SG10201911258WA (en) | 2021-01-28 |
Family
ID=73653767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201911258WA SG10201911258WA (en) | 2019-06-27 | 2019-11-27 | Electronic device |
Country Status (3)
Country | Link |
---|---|
US (2) | US10861503B1 (en) |
CN (1) | CN112151570B (en) |
SG (1) | SG10201911258WA (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210116955A (en) * | 2020-03-18 | 2021-09-28 | 에스케이하이닉스 주식회사 | Electronic device and method for fabricating the same |
CN113097383B (en) * | 2021-03-09 | 2023-07-18 | 长江先进存储产业创新中心有限责任公司 | CPU and manufacturing method thereof |
KR20220132991A (en) * | 2021-03-24 | 2022-10-04 | 에스케이하이닉스 주식회사 | Electronic device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4830275B2 (en) * | 2004-07-22 | 2011-12-07 | ソニー株式会社 | Memory element |
JP5557419B2 (en) * | 2007-10-17 | 2014-07-23 | スパンション エルエルシー | Semiconductor device |
US8098520B2 (en) * | 2008-04-25 | 2012-01-17 | Seagate Technology Llc | Storage device including a memory cell having multiple memory layers |
WO2010047068A1 (en) * | 2008-10-21 | 2010-04-29 | パナソニック株式会社 | Non-volatile storage device and method of writing to memory cell |
KR20100052080A (en) * | 2008-11-10 | 2010-05-19 | 주식회사 하이닉스반도체 | Resistive memory device and method for manufacturing the same |
KR20160022046A (en) * | 2014-08-19 | 2016-02-29 | 에스케이하이닉스 주식회사 | Electronic device |
US9691475B2 (en) * | 2015-03-19 | 2017-06-27 | Micron Technology, Inc. | Constructions comprising stacked memory arrays |
CN107431069B (en) * | 2015-03-31 | 2022-03-01 | 索尼半导体解决方案公司 | Switching device and memory device |
KR20170045871A (en) * | 2015-10-20 | 2017-04-28 | 에스케이하이닉스 주식회사 | Electronic device and method for fabricating the same |
KR102465966B1 (en) * | 2016-01-27 | 2022-11-10 | 삼성전자주식회사 | Memory device and electronic apparatus comprising the same memory device |
US9741764B1 (en) * | 2016-02-22 | 2017-08-22 | Samsung Electronics Co., Ltd. | Memory device including ovonic threshold switch adjusting threshold voltage thereof |
KR102463036B1 (en) * | 2016-03-15 | 2022-11-03 | 삼성전자주식회사 | Semiconductor memory devices and methods of manufacturing the same |
KR102240021B1 (en) * | 2017-03-03 | 2021-04-14 | 삼성전자주식회사 | Semiconductor device including a resistor |
KR102471157B1 (en) * | 2017-11-09 | 2022-11-25 | 삼성전자주식회사 | Memory devices |
-
2019
- 2019-11-27 US US16/698,802 patent/US10861503B1/en active Active
- 2019-11-27 SG SG10201911258WA patent/SG10201911258WA/en unknown
- 2019-12-16 CN CN201911293574.1A patent/CN112151570B/en active Active
-
2020
- 2020-11-03 US US17/088,334 patent/US11170824B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN112151570A (en) | 2020-12-29 |
US10861503B1 (en) | 2020-12-08 |
US11170824B2 (en) | 2021-11-09 |
US20200411061A1 (en) | 2020-12-31 |
KR20210001262A (en) | 2021-01-06 |
US20210050036A1 (en) | 2021-02-18 |
CN112151570B (en) | 2024-02-20 |
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