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SG10201911258WA - Electronic device - Google Patents

Electronic device

Info

Publication number
SG10201911258WA
SG10201911258WA SG10201911258WA SG10201911258WA SG10201911258WA SG 10201911258W A SG10201911258W A SG 10201911258WA SG 10201911258W A SG10201911258W A SG 10201911258WA SG 10201911258W A SG10201911258W A SG 10201911258WA SG 10201911258W A SG10201911258W A SG 10201911258WA
Authority
SG
Singapore
Prior art keywords
electronic device
electronic
Prior art date
Application number
SG10201911258WA
Inventor
Kim Myoung-Sub
Kim Tae-Hoon
Choi Hye-Jung
HONG Seok-Man
Original Assignee
Sk Hynix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020190077102A external-priority patent/KR102724927B1/en
Application filed by Sk Hynix Inc filed Critical Sk Hynix Inc
Publication of SG10201911258WA publication Critical patent/SG10201911258WA/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1659Cell access
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F15/00Digital computers in general; Data processing equipment in general
    • G06F15/76Architectures of general purpose stored program computers
    • G06F15/78Architectures of general purpose stored program computers comprising a single central processing unit
    • G06F15/7839Architectures of general purpose stored program computers comprising a single central processing unit with memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1675Writing or programming circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/003Cell access
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/004Reading or sensing circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/0069Writing or programming circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18Bit line organisation; Bit line lay-out
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/14Word line organisation; Word line lay-out
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/841Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/883Oxides or nitrides
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021Auxiliary circuits
    • G11C13/0069Writing or programming circuits or methods
    • G11C2013/0073Write using bi-directional cell biasing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50Resistive cell structure aspects
    • G11C2213/52Structure characterized by the electrode material, shape, etc.
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
SG10201911258WA 2019-06-27 2019-11-27 Electronic device SG10201911258WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190077102A KR102724927B1 (en) 2019-06-27 Electronic device

Publications (1)

Publication Number Publication Date
SG10201911258WA true SG10201911258WA (en) 2021-01-28

Family

ID=73653767

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201911258WA SG10201911258WA (en) 2019-06-27 2019-11-27 Electronic device

Country Status (3)

Country Link
US (2) US10861503B1 (en)
CN (1) CN112151570B (en)
SG (1) SG10201911258WA (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210116955A (en) * 2020-03-18 2021-09-28 에스케이하이닉스 주식회사 Electronic device and method for fabricating the same
CN113097383B (en) * 2021-03-09 2023-07-18 长江先进存储产业创新中心有限责任公司 CPU and manufacturing method thereof
KR20220132991A (en) * 2021-03-24 2022-10-04 에스케이하이닉스 주식회사 Electronic device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4830275B2 (en) * 2004-07-22 2011-12-07 ソニー株式会社 Memory element
JP5557419B2 (en) * 2007-10-17 2014-07-23 スパンション エルエルシー Semiconductor device
US8098520B2 (en) * 2008-04-25 2012-01-17 Seagate Technology Llc Storage device including a memory cell having multiple memory layers
WO2010047068A1 (en) * 2008-10-21 2010-04-29 パナソニック株式会社 Non-volatile storage device and method of writing to memory cell
KR20100052080A (en) * 2008-11-10 2010-05-19 주식회사 하이닉스반도체 Resistive memory device and method for manufacturing the same
KR20160022046A (en) * 2014-08-19 2016-02-29 에스케이하이닉스 주식회사 Electronic device
US9691475B2 (en) 2015-03-19 2017-06-27 Micron Technology, Inc. Constructions comprising stacked memory arrays
KR102488896B1 (en) * 2015-03-31 2023-01-17 소니 세미컨덕터 솔루션즈 가부시키가이샤 switch element and memory
KR20170045871A (en) * 2015-10-20 2017-04-28 에스케이하이닉스 주식회사 Electronic device and method for fabricating the same
KR102465966B1 (en) * 2016-01-27 2022-11-10 삼성전자주식회사 Memory device and electronic apparatus comprising the same memory device
US9741764B1 (en) * 2016-02-22 2017-08-22 Samsung Electronics Co., Ltd. Memory device including ovonic threshold switch adjusting threshold voltage thereof
KR102463036B1 (en) * 2016-03-15 2022-11-03 삼성전자주식회사 Semiconductor memory devices and methods of manufacturing the same
KR102240021B1 (en) * 2017-03-03 2021-04-14 삼성전자주식회사 Semiconductor device including a resistor
KR102471157B1 (en) * 2017-11-09 2022-11-25 삼성전자주식회사 Memory devices

Also Published As

Publication number Publication date
CN112151570B (en) 2024-02-20
US11170824B2 (en) 2021-11-09
US20210050036A1 (en) 2021-02-18
KR20210001262A (en) 2021-01-06
US20200411061A1 (en) 2020-12-31
CN112151570A (en) 2020-12-29
US10861503B1 (en) 2020-12-08

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