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SG10201800448XA - Method for Preparing Photomask Blank, Photomask Blank, Method for Preparing Photomask, Photomask, and Metallic Chromium Target - Google Patents

Method for Preparing Photomask Blank, Photomask Blank, Method for Preparing Photomask, Photomask, and Metallic Chromium Target

Info

Publication number
SG10201800448XA
SG10201800448XA SG10201800448XA SG10201800448XA SG10201800448XA SG 10201800448X A SG10201800448X A SG 10201800448XA SG 10201800448X A SG10201800448X A SG 10201800448XA SG 10201800448X A SG10201800448X A SG 10201800448XA SG 10201800448X A SG10201800448X A SG 10201800448XA
Authority
SG
Singapore
Prior art keywords
photomask
preparing
blank
photomask blank
metallic chromium
Prior art date
Application number
SG10201800448XA
Inventor
Yukio Inazuki
Kouhei Sasamoto
Tsutomu Yuri
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201800448XA publication Critical patent/SG10201800448XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/0821—Oxynitrides of metals, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/0821—Oxynitrides of metals, boron or silicon
    • C01B21/0823—Silicon oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06—Alloys based on chromium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

Method for Preparing Photomask Blank, Photomask Blank, Method for Preparing Photomask, Photomask, and Metallic Chromium Target 5 A method for preparing a photomask blank comprising a transparent substrate and a chromium-containing film contiguous thereto involves the step of depositing the chromium-containing film by sputtering a metallic chromium target having an Ag content of up to 1 ppm. When a photomask prepared from the photomask blank is repeatedly used in patternwise exposure to ArF excimer laser radiation, the number of defects formed on 10 the photomask is minimized. [FIG. 1]
SG10201800448XA 2017-02-09 2018-01-17 Method for Preparing Photomask Blank, Photomask Blank, Method for Preparing Photomask, Photomask, and Metallic Chromium Target SG10201800448XA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017021753 2017-02-09
JP2017027772 2017-02-17
JP2017091847 2017-05-02

Publications (1)

Publication Number Publication Date
SG10201800448XA true SG10201800448XA (en) 2018-09-27

Family

ID=61094323

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201800448XA SG10201800448XA (en) 2017-02-09 2018-01-17 Method for Preparing Photomask Blank, Photomask Blank, Method for Preparing Photomask, Photomask, and Metallic Chromium Target

Country Status (6)

Country Link
US (1) US10782608B2 (en)
EP (1) EP3361314B1 (en)
JP (1) JP7027895B2 (en)
CN (1) CN108415218B (en)
SG (1) SG10201800448XA (en)
TW (1) TWI813556B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008061843B4 (en) 2008-12-15 2018-01-18 Novaled Gmbh Heterocyclic compounds and their use in electronic and optoelectronic devices
JPWO2021187517A1 (en) * 2020-03-17 2021-09-23
JP7331793B2 (en) * 2020-06-30 2023-08-23 信越化学工業株式会社 Photomask manufacturing method and photomask blank
JP2022045198A (en) 2020-09-08 2022-03-18 凸版印刷株式会社 Phase shift mask blank, phase shift mask, and production method of phase shift mask
JP2022137972A (en) 2021-03-09 2022-09-22 株式会社トッパンフォトマスク Phase-shift mask blank, phase-shift mask, method of manufacturing phase-shift mask, and method of modifying phase-shift mask
JP2022144481A (en) * 2021-03-19 2022-10-03 株式会社トッパンフォトマスク Phase shift mask blank, phase shift mask and manufacturing method of phase shift mask
JP7482197B2 (en) * 2021-12-31 2024-05-13 エスケー エンパルス カンパニー リミテッド Blank mask and photomask using same
JP2023111618A (en) 2022-01-31 2023-08-10 株式会社トッパンフォトマスク Phase shift mask and method for manufacturing phase shift mask
JP2023111619A (en) 2022-01-31 2023-08-10 株式会社トッパンフォトマスク Phase shift mask and method for manufacturing phase shift mask

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270760A (en) * 1985-05-27 1986-12-01 Hitachi Metals Ltd Photomask
US5674647A (en) 1992-11-21 1997-10-07 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
JP3064769B2 (en) 1992-11-21 2000-07-12 アルバック成膜株式会社 PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK
US20040159538A1 (en) * 2003-02-13 2004-08-19 Hans Becker Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank
JP2005200686A (en) * 2004-01-14 2005-07-28 Jfe Steel Kk Slag foaming inhibitor in molten iron pre-treatment and method for inhibiting slag foaming
JP4376637B2 (en) * 2004-01-14 2009-12-02 Ｈｏｙａ株式会社 Sputtering target and mask blank manufacturing method using the same
EP1804301B1 (en) * 2004-10-19 2017-01-11 Nichia Corporation Semiconductor element
JP4005622B1 (en) 2006-09-04 2007-11-07 ジオマテック株式会社 Photomask substrate, photomask, and method of manufacturing the same
KR20110057064A (en) 2009-11-23 2011-05-31 주식회사 에스앤에스텍 Substrate for blankmask, blankmask manufactured using the same and manufacturing method thereof
JP5739375B2 (en) 2012-05-16 2015-06-24 信越化学工業株式会社 Halftone phase shift mask blank and method of manufacturing halftone phase shift mask
JP5795992B2 (en) * 2012-05-16 2015-10-14 信越化学工業株式会社 Photomask blank and photomask manufacturing method
JP6229466B2 (en) 2013-12-06 2017-11-15 信越化学工業株式会社 Photomask blank
JP6564734B2 (en) 2015-07-27 2019-08-21 信越化学工業株式会社 Photomask blank and photomask manufacturing method

Also Published As

Publication number Publication date
CN108415218A (en) 2018-08-17
CN108415218B (en) 2023-04-07
EP3361314B1 (en) 2021-09-29
JP2018173621A (en) 2018-11-08
TW201840865A (en) 2018-11-16
US20180224737A1 (en) 2018-08-09
JP7027895B2 (en) 2022-03-02
US10782608B2 (en) 2020-09-22
EP3361314A1 (en) 2018-08-15
TWI813556B (en) 2023-09-01

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