SG10201703264YA - Wafer processing method - Google Patents
Wafer processing methodInfo
- Publication number
- SG10201703264YA SG10201703264YA SG10201703264YA SG10201703264YA SG10201703264YA SG 10201703264Y A SG10201703264Y A SG 10201703264YA SG 10201703264Y A SG10201703264Y A SG 10201703264YA SG 10201703264Y A SG10201703264Y A SG 10201703264YA SG 10201703264Y A SG10201703264Y A SG 10201703264YA
- Authority
- SG
- Singapore
- Prior art keywords
- processing method
- wafer processing
- wafer
- processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016095248A JP6671794B2 (en) | 2016-05-11 | 2016-05-11 | Wafer processing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201703264YA true SG10201703264YA (en) | 2017-12-28 |
Family
ID=60163687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201703264YA SG10201703264YA (en) | 2016-05-11 | 2017-04-20 | Wafer processing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US10109528B2 (en) |
JP (1) | JP6671794B2 (en) |
KR (1) | KR102250216B1 (en) |
CN (1) | CN107452609B (en) |
DE (1) | DE102017207794B4 (en) |
SG (1) | SG10201703264YA (en) |
TW (1) | TWI757277B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6887722B2 (en) * | 2016-10-25 | 2021-06-16 | 株式会社ディスコ | Wafer processing method and cutting equipment |
KR102563929B1 (en) * | 2018-03-09 | 2023-08-04 | 삼성전자주식회사 | Method of singulating semiconductor die and method of fabricating semiconductor package |
JP7154687B2 (en) * | 2018-06-19 | 2022-10-18 | 株式会社ディスコ | tape expansion unit |
TWI678748B (en) * | 2018-10-18 | 2019-12-01 | 大陸商蘇州工業園區雨竹半導體有限公司 | Method for separating test sample from wafer substrate |
JP7221649B2 (en) * | 2018-10-30 | 2023-02-14 | 株式会社ディスコ | Wafer expansion method and wafer expansion device |
JP7199786B2 (en) * | 2018-11-06 | 2023-01-06 | 株式会社ディスコ | Wafer processing method |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6352073B1 (en) | 1998-11-12 | 2002-03-05 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing equipment |
JP4488590B2 (en) * | 1999-07-28 | 2010-06-23 | 株式会社ディスコ | Workpiece division method |
JP2003017457A (en) * | 2001-07-03 | 2003-01-17 | Dainippon Screen Mfg Co Ltd | Method and apparatus for cleaning substrate |
JP4402973B2 (en) * | 2004-02-09 | 2010-01-20 | 株式会社ディスコ | Wafer division method |
JP4733934B2 (en) * | 2004-06-22 | 2011-07-27 | 株式会社ディスコ | Wafer processing method |
JP2007067278A (en) * | 2005-09-01 | 2007-03-15 | Tokyo Seimitsu Co Ltd | Expanding method and expanding apparatus |
JP2010500764A (en) | 2006-08-07 | 2010-01-07 | セミ−フォトニクス カンパニー リミテッド | Method for separating multiple semiconductor dies |
JP2009272503A (en) * | 2008-05-09 | 2009-11-19 | Disco Abrasive Syst Ltd | Breaking device and breaking method for filmy adhesive |
JP5939451B2 (en) * | 2011-02-18 | 2016-06-22 | 株式会社東京精密 | Work dividing apparatus and work dividing method |
KR101271259B1 (en) * | 2011-06-01 | 2013-06-07 | 도광회 | apparatus for removing particles on a wafer |
JP5977633B2 (en) * | 2012-09-20 | 2016-08-24 | 株式会社ディスコ | Processing method |
JP6047353B2 (en) * | 2012-09-20 | 2016-12-21 | 株式会社ディスコ | Processing method |
JP6173059B2 (en) * | 2013-06-17 | 2017-08-02 | 株式会社ディスコ | Wafer splitting device |
JP6178724B2 (en) * | 2013-12-26 | 2017-08-09 | 株式会社ディスコ | Wafer dividing method |
JP2015222756A (en) * | 2014-05-22 | 2015-12-10 | 株式会社ディスコ | Method of processing wafer and parting device |
JP6425435B2 (en) * | 2014-07-01 | 2018-11-21 | 株式会社ディスコ | Tip spacing maintenance device |
-
2016
- 2016-05-11 JP JP2016095248A patent/JP6671794B2/en active Active
-
2017
- 2017-03-30 TW TW106110739A patent/TWI757277B/en active
- 2017-04-20 SG SG10201703264YA patent/SG10201703264YA/en unknown
- 2017-04-28 CN CN201710291264.0A patent/CN107452609B/en active Active
- 2017-05-04 US US15/586,889 patent/US10109528B2/en active Active
- 2017-05-09 DE DE102017207794.8A patent/DE102017207794B4/en active Active
- 2017-05-10 KR KR1020170058101A patent/KR102250216B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN107452609B (en) | 2023-04-25 |
JP6671794B2 (en) | 2020-03-25 |
DE102017207794B4 (en) | 2024-07-25 |
DE102017207794A1 (en) | 2017-11-16 |
JP2017204557A (en) | 2017-11-16 |
TWI757277B (en) | 2022-03-11 |
CN107452609A (en) | 2017-12-08 |
KR102250216B1 (en) | 2021-05-07 |
US10109528B2 (en) | 2018-10-23 |
US20170330799A1 (en) | 2017-11-16 |
TW201742131A (en) | 2017-12-01 |
KR20170127370A (en) | 2017-11-21 |
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