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RU95114671A - METHOD FOR REMOVING SILICON MELT IMPURITIES - Google Patents

METHOD FOR REMOVING SILICON MELT IMPURITIES

Info

Publication number
RU95114671A
RU95114671A RU95114671/02A RU95114671A RU95114671A RU 95114671 A RU95114671 A RU 95114671A RU 95114671/02 A RU95114671/02 A RU 95114671/02A RU 95114671 A RU95114671 A RU 95114671A RU 95114671 A RU95114671 A RU 95114671A
Authority
RU
Russia
Prior art keywords
slag
silicon melt
continuously
silicon
density
Prior art date
Application number
RU95114671/02A
Other languages
Russian (ru)
Other versions
RU2098354C1 (en
Inventor
Сшей Андерс
Original Assignee
Элкем А/С
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO943227A external-priority patent/NO180532C/en
Application filed by Элкем А/С filed Critical Элкем А/С
Publication of RU95114671A publication Critical patent/RU95114671A/en
Application granted granted Critical
Publication of RU2098354C1 publication Critical patent/RU2098354C1/en

Links

Claims (10)

1. Способ удаления примесей из расплава кремния путем обработки расплава кремния, помещенного в сосуд, шлаком, способным удалять примеси, в частности бор, из расплава кремния, отличающийся тем, что шлак непрерывно или по существу непрерывно добавляют к расплаву кремния.1. A method of removing impurities from a silicon melt by treating a silicon melt placed in a vessel with slag capable of removing impurities, in particular boron, from a silicon melt, characterized in that the slag is continuously or substantially continuously added to the silicon melt. 2. Способ по п. 1, отличающийся тем, что шлак, имеющий плотность большую, чем плотность расплава кремния, добавляют непрерывно или по существу непрерывно в верхнюю часть расплава кремния и непрерывно или по существу непрерывно выпускают из дна сосуда, в котором осуществляют обработку. 2. The method according to p. 1, characterized in that the slag having a density higher than the density of the silicon melt is added continuously or essentially continuously to the upper part of the silicon melt and continuously or essentially continuously released from the bottom of the vessel in which the processing is carried out. 3. Способ по п. 1, отличающийся тем, что шлак, имеющий плотность более низкую, чем плотность кремния, подают в ванну расплава кремния через дно или через нижнюю часть стенки сосуда, содержащего расплав кремния, и шлак поднимается в верхнюю часть ванны расплава кремния, где его непрерывно или по существу непрерывно удаляют. 3. The method according to p. 1, characterized in that the slag having a density lower than the density of silicon is fed into the bath of silicon melt through the bottom or through the lower part of the wall of the vessel containing the silicon melt, and the slag rises to the upper part of the bath of silicon melt where it is continuously or substantially continuously removed. 4. Способ по п. 1, отличающийся тем, что шлаковую обработку осуществляют в противотоке шлака и кремния. 4. The method according to p. 1, characterized in that the slag treatment is carried out in countercurrent slag and silicon. 5. Способ по п. 4, отличающийся тем, что противоток шлака и кремния осуществляют посредством перемещения расплава кремния и расплава шлака в противотоке через два или более сосудов. 5. The method according to p. 4, characterized in that the counterflow of slag and silicon is carried out by moving the molten silicon and molten slag in countercurrent through two or more vessels. 6. Способ удаления примесей из расплава кремния путем обработки расплава кремния, помещенного в сосуд, шлаком, способным удалять примеси, в частности, бор, из расплава, отличающийся тем, что шлак непрерывно или по существу непрерывно инактивируют или удаляют из расплава кремния, как только между шлаком и расплавом кремния достигается равновесие в отношении примесных элементов или элементов, подлежащих удалению. 6. A method for removing impurities from a silicon melt by treating a silicon melt placed in a vessel with slag capable of removing impurities, in particular boron, from the melt, characterized in that the slag is continuously or substantially continuously inactivated or removed from the silicon melt as soon as between the slag and the molten silicon equilibrium is achieved in relation to impurity elements or elements to be removed. 7. Способ по п. 6, отличающийся тем, что шлак инактивируют путем добавления одного или более ингредиентов к шлаку, которые увеличивают его плотность. 7. The method according to p. 6, characterized in that the slag is inactivated by adding one or more ingredients to the slag, which increase its density. 8. Способ по п. 7, отличающийся тем, что для того, чтобы увеличить плотность шлака, к шлаку добавляют соединения бария и/или соединения стронция. 8. The method according to p. 7, characterized in that in order to increase the density of the slag, barium compounds and / or strontium compounds are added to the slag. 9. Способ по п. 6, отличающийся тем, что шлак, имеющий плотность большую, чем плотность расплава кремния, добавляют непрерывно или по существу непрерывно в верхнюю часть расплава кремния и шлак оседает в виде шлакового слоя на дне сосуда, в котором осуществляют обработку. 9. The method according to p. 6, characterized in that the slag having a density higher than the density of the silicon melt is added continuously or substantially continuously to the upper part of the silicon melt and the slag deposits in the form of a slag layer on the bottom of the vessel in which the processing is carried out. 10. Способ по п. 9, отличающийся тем, что шлаковый слой поддерживают при более низкой температуре, чем расплав кремния. 10. The method according to p. 9, characterized in that the slag layer is maintained at a lower temperature than the silicon melt.
RU9595114671A 1994-09-01 1995-08-31 Method of removing impurities from silicon melt RU2098354C1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO943227A NO180532C (en) 1994-09-01 1994-09-01 Process for removing contaminants from molten silicon
NO943227 1994-09-01

Publications (2)

Publication Number Publication Date
RU95114671A true RU95114671A (en) 1997-07-27
RU2098354C1 RU2098354C1 (en) 1997-12-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU9595114671A RU2098354C1 (en) 1994-09-01 1995-08-31 Method of removing impurities from silicon melt

Country Status (16)

Country Link
US (1) US5788945A (en)
EP (1) EP0699625B1 (en)
JP (1) JP2851257B2 (en)
KR (1) KR0178071B1 (en)
CN (1) CN1042821C (en)
AT (1) ATE178031T1 (en)
AU (1) AU682277B2 (en)
BR (1) BR9503835A (en)
DE (1) DE69508498T2 (en)
DK (1) DK0699625T3 (en)
ES (1) ES2130535T3 (en)
FI (1) FI114092B (en)
GR (1) GR3030154T3 (en)
NO (1) NO180532C (en)
RU (1) RU2098354C1 (en)
ZA (1) ZA956186B (en)

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