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RU2488188C2 - Способ и устройство нанесения нанорисунка на большие площади - Google Patents

Способ и устройство нанесения нанорисунка на большие площади Download PDF

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Publication number
RU2488188C2
RU2488188C2 RU2010134893/28A RU2010134893A RU2488188C2 RU 2488188 C2 RU2488188 C2 RU 2488188C2 RU 2010134893/28 A RU2010134893/28 A RU 2010134893/28A RU 2010134893 A RU2010134893 A RU 2010134893A RU 2488188 C2 RU2488188 C2 RU 2488188C2
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RU
Russia
Prior art keywords
substrate
cylinder
mask
radiation
rotatable
Prior art date
Application number
RU2010134893/28A
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English (en)
Russian (ru)
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RU2010134893A (ru
Inventor
Борис КОБРИН
Игорь ЛАНДАУ
Борис ВОЛЬФ
Original Assignee
Ролит, Инк.
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Application filed by Ролит, Инк. filed Critical Ролит, Инк.
Publication of RU2010134893A publication Critical patent/RU2010134893A/ru
Application granted granted Critical
Publication of RU2488188C2 publication Critical patent/RU2488188C2/ru

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B29C33/424—Moulding surfaces provided with means for marking or patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
RU2010134893/28A 2008-01-22 2008-11-18 Способ и устройство нанесения нанорисунка на большие площади RU2488188C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1186108P 2008-01-22 2008-01-22
US61/011,861 2008-01-22
PCT/US2008/012901 WO2009094009A1 (en) 2008-01-22 2008-11-18 Large area nanopatterning method and apparatus

Publications (2)

Publication Number Publication Date
RU2010134893A RU2010134893A (ru) 2012-02-27
RU2488188C2 true RU2488188C2 (ru) 2013-07-20

Family

ID=40901352

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2010134893/28A RU2488188C2 (ru) 2008-01-22 2008-11-18 Способ и устройство нанесения нанорисунка на большие площади

Country Status (10)

Country Link
EP (1) EP2238608A4 (zh)
JP (1) JP5102879B2 (zh)
KR (1) KR20110008159A (zh)
CN (2) CN101911249A (zh)
AU (1) AU2008348353A1 (zh)
CA (1) CA2709718A1 (zh)
MX (1) MX2010007954A (zh)
RU (1) RU2488188C2 (zh)
TW (1) TWI518027B (zh)
WO (1) WO2009094009A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2593463C2 (ru) * 2013-12-23 2016-08-10 Станислав Викторович Хартов Способ получения проводящих сетчатых микро- и наноструктур и структура для его реализации
RU2809344C1 (ru) * 2023-01-27 2023-12-11 Альберт Георгиевич Битуев Способ изготовления микросхем

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2871366A1 (fr) 2004-06-09 2005-12-16 Ceravic Soc Par Actions Simpli Implant expansible prothetique osseux
WO2008153674A1 (en) 2007-06-09 2008-12-18 Boris Kobrin Method and apparatus for anisotropic etching
US8518633B2 (en) 2008-01-22 2013-08-27 Rolith Inc. Large area nanopatterning method and apparatus
US8192920B2 (en) 2008-04-26 2012-06-05 Rolith Inc. Lithography method
US8334217B2 (en) 2008-06-09 2012-12-18 Rolith Inc. Material deposition over template
CN101692151B (zh) * 2009-09-17 2011-12-28 复旦大学 一种基于软模板纳米压印技术的硅纳米线制作方法
US9465296B2 (en) * 2010-01-12 2016-10-11 Rolith, Inc. Nanopatterning method and apparatus
CA2786489A1 (en) * 2010-01-12 2011-07-21 Rolith, Inc. Nanopatterning method and apparatus
CN101846880B (zh) * 2010-05-12 2012-05-30 上海交通大学 激发表面等离子体的纳米光刻方法
AT510217B1 (de) * 2010-08-13 2013-12-15 Hueck Folien Gmbh Verfahren zur partiellen mattierung von uv-lackschichten
EP2609467A4 (en) * 2010-08-23 2014-07-30 Rolith Inc MASK FOR NEAR FIELD LITHOGRAPHY AND ITS MANUFACTURE
US9187839B2 (en) * 2010-10-07 2015-11-17 Michael Sheehy Process for the manufacture of sealed anodized aluminum components
CN102169819B (zh) * 2011-01-14 2013-01-30 中国科学院物理研究所 一种制备纳米金属结构的方法
WO2013049367A2 (en) * 2011-09-30 2013-04-04 Rolith, Inc. Plasmonic lithography using phase mask
KR101260221B1 (ko) * 2011-12-01 2013-05-06 주식회사 엘지화학 마스크
US9720330B2 (en) * 2012-04-17 2017-08-01 The Regents Of The University Of Michigan Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography
WO2013165915A1 (en) * 2012-05-02 2013-11-07 Rolith,Inc. Cylindrical polymer mask and method of fabrication
US9782917B2 (en) 2013-01-31 2017-10-10 Metamaterial Technologies Usa, Inc. Cylindrical master mold and method of fabrication
US9481112B2 (en) 2013-01-31 2016-11-01 Metamaterial Technologies Usa, Inc. Cylindrical master mold assembly for casting cylindrical masks
US20150336301A1 (en) 2012-05-02 2015-11-26 Rolith, Inc. Cylindrical polymer mask and method of fabrication
CN102759855A (zh) * 2012-07-17 2012-10-31 西安交通大学 一种单码道绝对式光栅尺辊压印模具制造方法
TWI474432B (zh) * 2012-11-15 2015-02-21 Lextar Electronics Corp 晶粒定位裝置、具有晶粒定位裝置的晶粒定位系統與發光二極體顯示板的晶粒定位方法
US9244356B1 (en) 2014-04-03 2016-01-26 Rolith, Inc. Transparent metal mesh and method of manufacture
KR101636696B1 (ko) 2014-05-23 2016-07-06 연세대학교 산학협력단 플렉서블 나노박막 광구조를 이용하는 가변 대면적 나노이미징 광학헤드 및 이미징 장치
WO2015183243A1 (en) 2014-05-27 2015-12-03 Rolith, Inc. Anti-counterfeiting features and methods of fabrication and detection
KR102252049B1 (ko) * 2014-08-04 2021-05-18 삼성디스플레이 주식회사 노광용 마스크, 이의 제조 방법 및 이를 이용한 기판의 제조 방법
KR102240761B1 (ko) 2015-01-29 2021-04-15 삼성디스플레이 주식회사 가변 마스크
JP6808155B2 (ja) * 2015-08-19 2021-01-06 国立大学法人 東京大学 母型の製造方法
TWI579640B (zh) * 2015-10-15 2017-04-21 許銘案 薄膜光罩、貼合輔具、貼合與曝光輔助裝置及將一薄膜光罩貼合於一曲面基板的方法
CN106773531B (zh) * 2017-01-03 2020-06-16 京东方科技集团股份有限公司 一种纳米压印装置中的压印滚轮及纳米压印装置
CN106547044B (zh) * 2017-01-24 2019-03-01 深圳市华星光电技术有限公司 一种偏光片的加工设备及制造方法
CN106647192A (zh) * 2017-03-10 2017-05-10 深圳市华星光电技术有限公司 曝光设备
CN109390263A (zh) * 2017-08-07 2019-02-26 财团法人工业技术研究院 元件扩距转移方法及实施此转移方法的设备
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EP3732047A4 (en) * 2017-12-29 2021-09-29 3M Innovative Properties Company PATTERNED NON-FLAT NANOSTRUCTURED SURFACE AND PRINTING PROCESSES TO PRODUCE SUCH SURFACE
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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5425848A (en) * 1993-03-16 1995-06-20 U.S. Philips Corporation Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method
US5865978A (en) * 1997-05-09 1999-02-02 Cohen; Adam E. Near-field photolithographic masks and photolithography; nanoscale patterning techniques; apparatus and method therefor
US5928815A (en) * 1997-11-14 1999-07-27 Martin; Joseph Proximity masking device for near-field optical lithography
US6045980A (en) * 1995-09-29 2000-04-04 Leybold Systems Gmbh Optical digital media recording and reproduction system
WO2003001869A2 (en) * 2001-06-29 2003-01-09 California Institute Of Technology Method and apparatus for use of plasmon printing in near-field lithography
RU2214359C1 (ru) * 2002-09-05 2003-10-20 Санкт-Петербургский государственный институт точной механики и оптики (технический университет) Способ формирования решетки нанокластеров кремния на структурированной подложке
US20060014108A1 (en) * 2004-06-28 2006-01-19 Canon Kabushiki Kaisha Resist pattern forming method based on near-field exposure, and substrate processing method and device manufacturing method using the resist pattern forming method
US7274998B2 (en) * 2005-09-30 2007-09-25 Intel Corporation Near-field photo-lithography using nano light emitting diodes
TW200738272A (en) * 2005-11-23 2007-10-16 Coca Cola Co Dental composition with high-potency sweetener
US20070287100A1 (en) * 2006-06-07 2007-12-13 Canon Kabushiki Kaisha Near-field exposure method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200419A (ja) * 1983-04-28 1984-11-13 Toshiba Corp 大面積露光装置
DE19826971C2 (de) * 1998-06-18 2002-03-14 Reiner Goetzen Verfahren zum mechanischen und elektrischen Verbinden von Systembauteilen
US7144539B2 (en) * 2002-04-04 2006-12-05 Obducat Ab Imprint method and device
DE10217151A1 (de) * 2002-04-17 2003-10-30 Clariant Gmbh Nanoimprint-Resist
RU2323504C2 (ru) * 2003-01-17 2008-04-27 Микротек Гезелльшафт Фюр Микротехнологи Мбх Способ изготовления микросистем
JP4572406B2 (ja) * 2004-04-16 2010-11-04 独立行政法人理化学研究所 リソグラフィーマスク
CN100492588C (zh) * 2004-05-21 2009-05-27 Jsr株式会社 浸液曝光用液体以及浸液曝光方法
JP2006073784A (ja) * 2004-09-02 2006-03-16 Ricoh Co Ltd フォトマスク、露光装置及び露光方法
JP4674105B2 (ja) * 2005-03-25 2011-04-20 独立行政法人科学技術振興機構 回路パターン転写装置及び方法
JP4246174B2 (ja) * 2005-04-01 2009-04-02 独立行政法人科学技術振興機構 ナノインプリント方法及び装置
US20070138699A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US20070200276A1 (en) * 2006-02-24 2007-08-30 Micron Technology, Inc. Method for rapid printing of near-field and imprint lithographic features
JP2008021869A (ja) * 2006-07-13 2008-01-31 Ricoh Co Ltd プラズモン共鳴リソグラフィおよびリソグラム
JP5570688B2 (ja) * 2007-06-28 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル 微細レジストパターン形成方法及びナノインプリントモールド構造
JP4406452B2 (ja) * 2007-09-27 2010-01-27 株式会社日立製作所 ベルト状金型およびそれを用いたナノインプリント装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5425848A (en) * 1993-03-16 1995-06-20 U.S. Philips Corporation Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method
US6045980A (en) * 1995-09-29 2000-04-04 Leybold Systems Gmbh Optical digital media recording and reproduction system
US5865978A (en) * 1997-05-09 1999-02-02 Cohen; Adam E. Near-field photolithographic masks and photolithography; nanoscale patterning techniques; apparatus and method therefor
US5928815A (en) * 1997-11-14 1999-07-27 Martin; Joseph Proximity masking device for near-field optical lithography
WO2003001869A2 (en) * 2001-06-29 2003-01-09 California Institute Of Technology Method and apparatus for use of plasmon printing in near-field lithography
RU2214359C1 (ru) * 2002-09-05 2003-10-20 Санкт-Петербургский государственный институт точной механики и оптики (технический университет) Способ формирования решетки нанокластеров кремния на структурированной подложке
US20060014108A1 (en) * 2004-06-28 2006-01-19 Canon Kabushiki Kaisha Resist pattern forming method based on near-field exposure, and substrate processing method and device manufacturing method using the resist pattern forming method
US7274998B2 (en) * 2005-09-30 2007-09-25 Intel Corporation Near-field photo-lithography using nano light emitting diodes
TW200738272A (en) * 2005-11-23 2007-10-16 Coca Cola Co Dental composition with high-potency sweetener
US20070287100A1 (en) * 2006-06-07 2007-12-13 Canon Kabushiki Kaisha Near-field exposure method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Choi et al. Fluorinated Organic-inorganic Hibrid Mold as a New Stamp for Nanoimprint and Soft Lithography. Langmur 2005, p.9390-9392. *
Hua Tan et al. Roller nanoimprint lithography. J. Vac. Sci. Technol. В 16(6), Nov/Dec 1998, p.3926-3928. *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2593463C2 (ru) * 2013-12-23 2016-08-10 Станислав Викторович Хартов Способ получения проводящих сетчатых микро- и наноструктур и структура для его реализации
RU2809344C1 (ru) * 2023-01-27 2023-12-11 Альберт Георгиевич Битуев Способ изготовления микросхем

Also Published As

Publication number Publication date
TWI518027B (zh) 2016-01-21
CN105171985A (zh) 2015-12-23
CN101911249A (zh) 2010-12-08
AU2008348353A1 (en) 2009-07-30
KR20110008159A (ko) 2011-01-26
WO2009094009A1 (en) 2009-07-30
MX2010007954A (es) 2010-11-05
JP5102879B2 (ja) 2012-12-19
EP2238608A4 (en) 2012-02-22
EP2238608A1 (en) 2010-10-13
TW200932666A (en) 2009-08-01
RU2010134893A (ru) 2012-02-27
JP2011526069A (ja) 2011-09-29
CA2709718A1 (en) 2009-07-30

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Effective date: 20161119