RU2457556C1 - Method and apparatus for deleting recorded information - Google Patents

Abstract

FIELD: information technology.

SUBSTANCE: microcircuit is placed on a flat heat reflector made from nonmagnetic metal between annular throttles of a field-converting system such that the plane of the substrate of the microcircuit is parallel to the plane of the annular throttles of the field-converting system. The microcircuit is exposed to pulses of a sinusoidal electromagnetic field at frequency higher than 200 kHz, duration of not less than 1.5 ms and radiation intensity of not less than 167 kW per pulse. Also, the amplitude of each pulse of the sinusoidal electromagnetic field falls with time.

EFFECT: high reliability of deleting information, reduced power consumption and simple design of the apparatus for deleting information.

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Description

The invention relates to techniques for recording and erasing information from heterogeneous semiconductor storage media (non-volatile memory devices, flash memory).

A typical flash memory cell consists of transistors of a special architecture and does not contain capacitors, which makes it different from other types of semiconductor memory. The flash cell scales perfectly. Flash memory stores data in memory cells even when the power is off. The information recorded on flash memory can be stored for a long time and is able to withstand significant mechanical loads, due to its protection from external influences.

The basic principle of operation of semiconductor devices of volatile memory is to store the charge in an isolated gate, for example, a MOS transistor. If a charge is stored in the insulated gate, then the threshold voltage Urn of the transistor can vary between the two values “0” and “1”. The threshold voltage varies depending on the amount of charge stored in an insulated gate at a certain distance from it [1].

The information contained in the device is detected by applying a voltage to the gate, the value of which lies between two possible threshold voltage values. In one state, the transistor conducts current, while in the other it does not conduct, it is locked. The charge storage device on an insulated gate transistor is implemented in two ways. One is based on the storage of charge in a conductive or semiconducting layer surrounded by a dielectric, usually silicon oxide [1] with a floating gate [2, 3]. Another type of devices is based on the storage of charge on discrete centers (traps) of the corresponding dielectric layer. Such devices are usually called capture devices [4, 5].

To erase recorded information in the form of residual conductivity, it is necessary to restore the initial value of the potential barrier for charge carriers, the threshold voltage of which is equal to the value of the erased state preceding the recording value. This means that a process must occur in which the charge Qt stored at discrete centers or a floating gate at a distance L from the gate should at least take a value equal to “0”, and the fixed values of the charge on the interface, for example, silicon - the insulator and charge in the depleted layer of silicon to take the initial value of the previous record.

The most common way to erase a record are hardware, physical damage to the chip by mechanical methods (shock, puncture), illumination of the carrier with infrared light and heating to a temperature above which information is damaged, adsorption of steam or gas to the carrier and then desorption by applying an electric field.

A known method of erasing by illuminating the carrier with infrared light and heating to a temperature at which information is damaged [6]. The disadvantage of this method is that it only accelerates the process of restoring equilibrium memorization, however, powerful sources of infrared light are necessary for a reliable degree of erasure, i.e. low energy efficiency. To implement the method, special expensive equipment and high-precision control over the heating temperature of the information carrier is required, which is technically difficult [7], and a slight temperature increase leads to an irreversible change in the properties of the media and to repeated thermal excitation of the residual conductivity, the erasure time, which is determined by the time taken to heating the storage medium.

A known method [8] of erasing a recording in which steam or gas is adsorbed onto an inhomogeneous semiconductor layer, p-bond with an n-type semiconductor or n-bond with a p-type semiconductor, then a desorption process is carried out. This method is energy-intensive, and the disadvantage of this method is that the erasure time is determined by the time of the operation of adsorption, desorption and preparation time for these operations. Before the adsorption operation, the semiconductor layer is placed in a special vacuum chamber at a certain pressure, the residual conductivity is excited by light from an incandescent lamp (for 20-60 s), the conductivity of the layer is controlled, then the adsorption is carried out in the chamber with a change in vapor pressure (within 1 s). To carry out desorption, the pressure in the chamber is reduced to the initial value. In this method, erasing is carried out due to the pressure pulse of the adsorbate, therefore, the presence of a sealed chamber and special equipment is required.

The disadvantage of this method is the limited scope. This method is applicable only for erasing recorded information on open-frame semiconductor media, has low energy efficiency, requires expensive equipment to implement, a long erasure time and the quality of erasing depends on the exact observance of a large number of difficult to control operations in a certain sequence.

A known method of erasing a recording by applying an electric field to a storage medium. It facilitates the process of carrier transfer through a potential barrier to restore the initial value of the barrier [9]. The disadvantage of this method is that it provides a relatively low quality of erasure, it only speeds up the recovery process, and the greatest degree of erasure is achieved in the case of applying a high voltage to the terminals of the chip. And this allows either to completely destroy the addressing system of the microcircuit or to cause repeated electrical excitation of residual conductivity. This method is limitedly applicable for erasing recordings from heterogeneous storage media with sequential access, for example, USB. In this case, applying a high voltage can damage some of the connections inside the microcircuit, without damaging the recorded information, which in the future, if special equipment is available, can be restored.

The closest analogue to the method of erasing a recording by the Fowler-Nordhein method of quantum mechanical tunneling [10, 11], by removing the charge from a “floating” shutter placed in a memory cell by the injection of “hot” electrons. With the tunneling effect, the wave properties of the electron are used. The effect itself consists in overcoming the potential barrier of small “thickness” by the electron [12]. When erasing records, high voltage is applied to the source of the MOS transistor. A high negative voltage is selectively applied to the control gate. Electrons tunnel to the drain. The electron cannot overcome the potential barrier and the dielectric layer in the usual way, since it lacks energy. But when certain conditions are created, the electron slips through the dielectric layer (tunnels through it), creating a current.

There are three main types of access to flash memory:

- arbitrary asynchronous (Conventional) access to memory cells;

- synchronous (Burst), data is read in parallel, in blocks of 16 or 32 words, the read data is transmitted sequentially;

- asynchronous (Page), 4 or 8 words each.

To provide access to flash memory, a hardware-software complex, an intermediary controller between the host and devices on the bus are required. Software functions (enumeration of devices and their configuration, energy management, transfer processes, devices on the bus and the bus itself) are assigned to the operating system.

The most common operating system that implements full flash access support is Windows 98 Second Edition.

The disadvantage of this method of erasing recordings from non-volatile memory devices, flash memory is low energy efficiency, to erase information it is necessary to have a hardware-software complex, an operating system, a certain type of memory access, which determines a relatively long time to erase information, the ability to recover information when use of PC hardware and software.

A common disadvantage of the above methods is the low quality of erasing information from heterogeneous semiconductor data carriers with non-volatile memory, protected from external influences, the large energy consumption and time to erase recorded information, and the need for additional expensive equipment.

A device for erasing recorded information on heterogeneous semiconductor media [8]. This device contains: a darkened vacuum chamber, a device for generating steam, a compressor for changing the vapor pressure, an incandescent lamp of 30 W, an electromagnetic valve, a pump, a device for changing the distance of an incandescent lamp, a device for measuring the conductivity of a film, a device for measuring the pressure of water vapor in the chamber, time measuring device and power supply. The power source, with an initial pressure of the residual atmosphere of 1/10 ³ ÷ 1 mm Hg, residual conductivity is excited by the light of an incandescent lamp located at a distance of 10 cm from the surface of the film - a semiconductor information carrier. For 20-60 s measure the conductivity of the film. During the excitation time, the conductivity of the film reaches a stationary value δsv ~ 1/10 1 / Ohm · cm.

Adsorption is carried out by increasing the pressure using a compressor of water vapor coming from a steam generating device into a vacuum chamber with a steam pressure of 10 mm to 1000 mm Hg. for ~ 1 s, controlled by a special time measuring device. With an increase in the conductivity of the film, desorption is performed by lowering the pressure to the initial level.

Quick inlet and outlet of the adsorbate is carried out using a pump and an electromagnetic valve. Erasing is carried out by an adsorbate pressure pulse, which is constantly monitored by a device for measuring the pulse pressure generated in a darkened vacuum chamber.

The disadvantage of this device is the design complexity, the use of expensive equipment, a lot of time is required to prepare the erasure process, special control equipment is needed to control the parameters of the components of the device, limited application.

The closest (prototype) to the claimed device by technical essence is a device [13] for erasing recorded information for erasing records from heterogeneous semiconductor data carriers with non-volatile memory, flash memory. This method and device consists in supplying the rated voltage to the microcircuit and to the control gate for at least 1.5 ms and exciting microcircuits placed on its substrate with Foucault currents with an intensity of at least 60 mA and irradiation with two magnetic fields at different angles to the substrate plane during the inclusion of the rated voltage of the microcircuit. In addition, the device contains two power sources, a voltage divider, a control unit, a connector, three circuits, two switches for two positions, a sensor, a control unit, the first circuit containing two chokes and a capacitor, and the second and third circuits contain one choke and one capacitor.

The features of the invention are common with the features of the prototype (method). The chip with the recorded information is placed between the ring chokes of the field-forming system and the chip is irradiated with a field formed by sinusoidal pulses with a duration of 1.5 μs.

The features of the invention are common with the features of the prototype (device).

A power source, a field-forming system consisting of two ring chokes arranged coaxially, an energy storage device, the first and second key elements.

The disadvantage of this method of erasing records from a non-volatile memory device, flash memory, is the low energy efficiency. To erase information, it is necessary to supply power to the microcircuit and the voltage to the control gate through the contact circuit, while simultaneously exciting Foucault currents in the microcircuit conductors with two magnetic fields at different angles to the substrate plane when the microcircuit's rated voltage is turned on. In addition, the disadvantage of this erasing device is that erasing requires high energy costs associated with the need to have electrical power circuits for electrical connection and to supply the microcircuit and a number of component parts of the device with two power sources for charging the capacitors of the first and second circuit and create magnetic fields with different directions of intensity vectors and for excitation in the third circuit of induction pulsed fields. These fields are converted into electrical impulses through a wire connection through a connector and fed to the input circuit of the microcircuit. In addition, it is necessary to ensure the rated voltage of the microcircuit and the direct connection through the connector of a multi-circuit magnetic system with complex structural and technological placement of four or more chokes.

The claimed invention solves the problem of improving the quality and reliability of erasing information from its medium without the possibility of its recovery, reducing energy consumption.

To create Foucault currents with an intensity of 30 mA, it is required to consume energy of the claimed device no more than 250 J, with a pulse duration of 1.5 ms with a power of 167 kW. In a prototype consisting of three circuits, two of which create a magnetic field of at least 550 kA / m, to create Foucault currents with an intensity of 60 mA, with the same pulse duration, it takes 450 J to produce pulsed magnetic fields with a pulse power of 300 kW. In addition, 900 J at a pulse power of 600 kW is required to induce Foucault currents in the third circuit by induction taking into account losses. In this case, in each of the circuits it is necessary to have blocks of capacitors with a capacity of 10,000 uF. In the prototype, the total number of capacitors of type K-50-77 should be at least 14 pcs., And for the three loops of the prototype of the invention, capacitors with a total capacity of at least 20,000 uF should be installed. In the inventive device for creating Foucault currents with an intensity of 30 mA, it is sufficient to have a capacitance of not more than 5600 μF, which is provided by four capacitors included in one circuit.

The technical result of the invention is to increase reliability with a non-contact method of erasing information, reducing power consumption by the erasing device and simplifying the design of the field-forming system. The invention is illustrated by drawings.

Figure 1 shows a block diagram of a device for erasing recorded information. Figure 2 shows the time sequence for connecting to the operation of the blocks. Figure 3 shows an embodiment of a field-forming system. The following notation is introduced in the figures: 1 — power supply device (SCP); 2 - secondary power source (VIN); 3 - power off timer (TOP); 4 - voltage converter (PN); 5 - rectangular pulse generator (GUI); 6 - energy storage (NE); 7 - splitter (P); 8 - shaper pulse sequence (FIP); 9 - the first key element (1KE); 10 - the second key element (2KE); 11 - modulation device (UM); 12 - trigger device (US); 13 - field-forming system (PS); 14 - throttle (D); 15 - reflector (O); 16 - temperature sensor (DT); 17 - information carrier (NI); 18 - substrate (P).

The numbers written inside the rectangles of the blocks in small print indicate the numbers of the inputs and outputs of the blocks, in the text of the description of the invention they are enclosed in parentheses (figure 1).

Declares a method of erasing recorded information on a chip and a device for its implementation.

The method of erasing recorded information

The method of erasing information recorded on a chip with a non-uniform semiconductor medium with non-volatile memory is as follows.

The chip with the recorded information is placed on a flat heat reflector between the ring chokes of the field-forming system so that the plane of the substrate of the chip is parallel to the plane of the ring chokes of the field-forming system.

The reflector and the microcircuit are irradiated with pulses of a sinusoidal electromagnetic field with a frequency of more than 200 kHz with an amplitude in the pulse decreasing in time.

The duration and intensity of the irradiation of the reflector and microcircuit must be such that the Foucault currents excited in the reflector and the conductors of the microcircuit heat them to a temperature of at least 300 ° C and Foucault currents with an intensity of at least 30 mA are excited in the conductors of the microcircuit.

Foucault currents bring charges at the gates of transistors of the microcircuit to an unstable, excited state, and the thermal energy of Foucault currents enhances the state of charge excitation and changes their structure, which ensures the effect of charge replacement and destruction of memory elements without the possibility of their recovery.

The pulse duration should be at least 1.5 ms and the pulse intensity at least 167 kW.

Signs common to the prototype and invention (method) are irradiation of a microcircuit with recorded information by an electromagnetic field.

Erase device

The erasing device (Fig. 1) contains: a power supply device 1 soft starter, a secondary power supply 2 VIP, a power off timer 3 TOP, a voltage converter 4 PN, a rectangular pulse generator 5 GPI, an energy storage device 6 NE, a splitter 7 R, a pulse shaper 8 FIP, the first key element 9 1KE, the second key element 10 2KE, the modulation device 11 PA; the trigger device 12 UZ, field forming system 13 PS.

The power supply device 1 soft starter 220 V, 50 Hz has a power output (1).

The secondary power supply 2 VIP DC voltage plus 12 V has a first power input (1), a second control signal input (3) and one power output (2) plus 12 V.

Power off timer 3 The TOP has a first input (1) of power and a second input (2) signal and one output (3) signal control of the secondary power source 2.

The voltage converter 4 PN has an input (1) and an output (2) of power supply, with a voltage of at least plus 300 V.

The generator of rectangular pulses 5 GPI has a power input (1) and a signal output (2).

Energy storage 6 NE has an input (1) and an output (2) of power. Splitter 7 P has one signal input (1) and the first (2) and second (3) signal outputs.

The pulse train generator 8 FIP has a signal input (1) and output (2).

The first key element 9 1KE has a signal input (1) and output (2). The second key element 10 2KE has a signal input (1) and output (2). The AM 11 modulation device has a power input (1), signal inputs of the first (2) and second (3), signal control input (4) and AC voltage output (5).

The trigger device 12 UZ has an output (1) of the control signal. Field-forming system 13 PS has an input (1) power and signal output (2). This system contains a two-section inductor 14 D, between the sections of which are placed a reflector 15 O, a substrate 18 P and a temperature sensor 16 DT (Figs. 1 and 3).

The two-section inductor 14 D is made of two ring coils of the same diameter with the same direction of winding the wires. Inductors are connected in series. The internal diameter of the chokes is not less than the overall dimensions of the microcircuit with the recorded information. The chokes are coaxially placed one above the other at a distance from each other not less than the sum of the thicknesses of the board with the microcircuit, reflector and temperature sensor.

The reflector 150 is made in the form of a plate of non-magnetic metal, for example, aluminum. The dimensions of the reflector 15 do not exceed the dimensions of the board to accommodate the microcircuit.

The temperature sensor 16 DT is mounted on the reflector from its rear side and has a signal output (2), which is the output (2) of the field-forming system 13 PS.

The storage medium 17 NI - the chip is placed in the cavity between the chokes 14 D on the reflector 15 About, placed on the substrate 18 P (figure 3).

Electrical connections of the device blocks (figure 1)

The power supply device for soft starter 1, with its output (1) of power supply 220 V, 50 Hz, is connected to the first input (1) of the secondary power supply of VIP 2 and the first power input of the power off timer TOP 3, which is designed to turn off the power.

The output (2) of the power supply of the VIP 2 is connected to the input (1) of the rectangular pulse generator GPI 5 and to the input (1) of the power supply of the voltage converter PN 4, which is connected to the input (2) of the power supply to the input (1) of the power supply of the energy storage device NE 6, output (2) the power of which is connected to the first input (1) of the power of the modulation device of the PA 11. The signal input (3) of the VIP 2 is connected to the signal output (3) of TOP 3.

The signal output (2) of the generator of rectangular pulses GPI 5 is connected to the signal input (1) of the splitter R 7, the signal outputs (2) and (3) of which are connected to the input (1) of the pulse shaper FIP 8 and to the first signal input (1) the first key element 1KE 9, and the signal output (2) of FIP 8 is connected to the signal input (1) of the second key element 2KE 10. The outputs 1KE and 2KE are connected respectively to the second and third signal inputs (2) and (3) of the modulation device UM 11 The fourth signal input (4) UM 11 is connected to the output (1) start-up facilities of ultrasonic recorder 12. The output (5) of the power supply of the PA 11 is connected to the input (1) of the power of the field-forming system PS 13, which at the same time is the input (1) of the power supply of the chokes D 14, the signal output (2) of the PS 13 is the signal output (2) of the sensor temperature DT 16. The output (2) DT 16 is connected to the second signal input (2) of the power off timer TOP 3.

The information carrier NI 17 (flash carrier) and the O 15 reflector on the substrate P 18 are placed between the chokes D 14, where they are irradiated by their electromagnetic field.

The device operates as follows (figures 1 and 2).

When you connect the power supply device UPP 1 to the network 220 V, 50 Hz and there is no signal at the output of the power off timer TOP 3, at the output (2) of the secondary power supply of VIP 2, a constant voltage of 12 V appears (Fig.2a), which provides power to the converter circuits voltage PN 4 and the generator of rectangular pulses GPI 5. PN 4 increases the voltage to 300 V, which charges the capacitors of the energy storage NE 6 up to 300 V (Fig.2zh). At the output (2) GUI 5 there is a continuous sequence of rectangular pulses, which is fed to the input (1) of the splitter P 7 (Fig.2g). At the outputs (2) and (3) P 7 two identical sequences of rectangular pulses appear. The first sequence of rectangular pulses from the output (2) P 7 is fed to the input (1) of the first key element 1KE 9 (fig.2d). The second sequence of rectangular pulses from the output (3) P 7 enters the input (1) of the pulse shaper of FIP 8, from the output (2) of which the inverted sequence of rectangular pulses is removed, delayed by time by 1/128 of the period of these pulses. The inverted sequence of pulses from the output (2) of FIP 8 is supplied to the input (1) of the second key element 2KE 10 (Fig.2e). The key elements 1KE and 2KE stabilize the current of rectangular pulses, excluding the influence of the modulation device UM 11 on the FIP 8 formation circuit and the P 7 splitter.

When a signal arrives from the output (1) of the trigger device UZ 12 (Fig.2z) at time t _knots , the first input (1) of the modulation device UM 11 receives a voltage from NE 6, modulated by two pulse sequences delayed one relative to the other time for 1/128 pulse repetition period. The modulated voltage from the output of the UM 11 is supplied to the input (1) of the PS 13 and to the input (1) of the chokes D 14 (Fig.2i). Chokes excite an alternating electromagnetic field, which is converted into thermal energy on the reflector by Foucault currents. The reflector focuses the thermal energy on the microcircuit, which acts on the data carrier - a flash carrier located between the chokes D 14 PS 13. The information carrier NI 17 is irradiated with an alternating electromagnetic field with a frequency of more than 200 kHz, a duration of at least 1.5 ms and an intensity of not less than 167 kW. The duration of irradiation and the intensity of the electromagnetic field should ensure the heating of the microcircuit with Foucault currents up to 300 ° C. On the back side of the surface of the reflector 015, a sensitive element of the temperature sensor DT 16 is fixed. When the reflector is heated, the voltage at the output of the DT 16 increases (Fig.2b) and goes to the input (2) of the TOP 3 power off timer. When this voltage is reached U _then and at the end of time T _back , at time t1, at the output (3) of the TOP 3 timer, a voltage appears that is supplied to the input (3) of the VIP 2 (Fig.2c). At this point in time, the voltage at the output (2) of the VIP 2 source is turned off, which leads to the disappearance of the electromagnetic field of the PS 13 chokes. The data carrier and reflector begin to cool, which leads to a decrease in the voltage at the output of the temperature sensor ДТ 16. At time t2, when the voltage drops below a predetermined value U _{then the} signal at the output (3) of the TOP 3 timer disappears.

After erasing the information from its carrier NI 17, it is completely destroyed without the possibility of its recovery. If necessary, the duty cycle is repeated.

Erase Device Implementation

The device for erasing information is implemented according to the block diagram of figure 1 on the following components.

The power supply device UPP 1 is connected to the industrial network through a network power cable with a Euro connector.

As a secondary power source VIP 2 applied power source type B5-71.

The TOP 3 power off timer is based on an ATMEGA8 chip.

The voltage converter PN 4 is made in the form of a voltage-boosting circuit type DC / DC.

The generator of rectangular pulses GPI 5 is made on a chip type KR1006VI1.

Energy storage unit NE 6 is made on K-50-77 type capacitors with a total capacity of 5600 uF.

Splitter P 7 is made in the form of a tee divider.

The pulse generator Shaper FIP 8 is made on a chip type K155LAZ.

The first and second key elements 1KE 9 and 2KE 10 are made on transistors of the type IRFLO14N.

The modulation device UM 11 is made on a standard pulse transformer.

The trigger device UZ 12 is made in the form of a push-button switch type PKN-2. The field-forming system PS 13 is made of two coaxial ring chokes D 14 with an inner diameter of 40 mm, located on the substrate 18, between the chokes D 14, the reflector 15 and the temperature sensor DT 16. The coils of the chokes are wound with a copper wire 2.5 mm in diameter in one layer and connected in series (figure 3).

The O 15 reflector is made of 0.5 mm thick aluminum with the dimensions of the microcircuit.

Temperature sensor DT 16 applied type TMP-0.5.

The storage medium NI 17 is a non-uniform semiconductor with non-volatile memory (flash memory).

The substrate P 18 is made of mikaleks material.

The technical result of the invention is achieved. The reliability of erasing information has been increased, the power consumption of the erasing device has been reduced, and the design of the field-forming system has been simplified.

Distinctive features of the invention (method)

The microcircuit is placed parallel to the plane of the inductor turns on a flat heat reflector made of non-magnetic material and irradiated with an electromagnetic field with a frequency of more than 200 kHz, the irradiation intensity is at least 167 kW per pulse, while the pulse amplitude of the sinusoidal electromagnetic field is reduced in time.

Distinctive features of the invention (device)

A power connection device with input and output, a power-off timer that has first and second inputs and an output, a voltage converter that has an input and an output, a rectangular pulse generator that has an input and an output, a splitter that has an input, first and second outputs , a pulse train driver that has an input and an output, a modulation device that has first, second, third and fourth inputs and an output, a trigger device that has an output.

The power source is made in the form of a secondary power source and has a first and second input and output, a temperature sensor, in addition, the output of the power connection device is connected to the first input of the power off timer and to the first input of the secondary power source, the output of which is connected to the input of the square-wave generator and the input of the voltage Converter, the output of which is connected to the input of the energy storage device, the output of the latter is connected to the first input of the modulation device, and the output of the power off timer n with the second input of the secondary power source, the output of the rectangular pulse generator is connected to the input of the splitter, the first output of which is connected to the input of the first key element, and the second to the input of the pulse shaper, the output of which is connected to the input of the second key element, in addition, the output of the first the key element is connected to the second input of the modulation device, and the output of the second key element is connected to the third input of the modulation device, the fourth input of which is connected to the output of the unit oystva startup modulation device output coupled to an input field-generating system.

The storage medium is placed on a reflector that is mounted on a substrate, in addition, the storage medium, a reflector and a substrate are placed between ring chokes, the distance between which is greater than the sum of the thicknesses of the microcircuit, reflector and substrate, and the temperature sensor is mounted on the back of the reflector, and its output is connected with the second input of the power off timer.

List of used information sources

Claims (2)

1. The method of erasing information recorded on a chip with a heterogeneous semiconductor carrier with non-volatile memory, consisting in the fact that the chip with the recorded information is placed between the ring chokes of the field-forming system and the chip is irradiated with a field formed by sinusoidal pulses with a duration of 1.5 μs, characterized in that the chip is placed parallel to the plane of the inductor turns on a flat heat reflector made of non-magnetic material and irradiated with an electromagnetic field with a frequency of more than 200 kHz The radiation exposure is not less than 167 kW per pulse, while the pulse amplitude of the sinusoidal electromagnetic field is reduced in time. 2. A device for erasing recorded information containing a power source, a field-forming system consisting of two ring chokes located coaxially, an energy storage device, the first and second key elements, characterized in that a power connection device with input and output, an off timer a power supply that has first and second inputs and an output, a voltage converter that has an input and an output, a rectangular pulse generator that has an input and an output, a splitter that has an input, rvy and second outputs, the pulse sequence generator which has an input and an output, the modulation device which has a first, second, third and fourth inputs and an output; a startup device that has an output, and the power source is in the form of a secondary power source and has first and second inputs and an output, a temperature sensor, in addition, the output of the power connection device is connected to the first input of the power off timer and to the first input of the secondary power source, the output of which is connected to the input of the rectangular pulse generator and the input of the voltage converter, the output of which is connected to the input of the energy storage device, the output of the latter is connected to the first input of the modulation device, moreover, the output of the power-off timer is connected to the second input of the secondary power source, the output of the rectangular pulse generator is connected to the input of the splitter, the first output of which is connected to the input of the first key element, and the second to the input of the pulse shaper, the output of which is connected to the input of the second key element, in addition, the output of the first key element is connected to the second input of the modulation device, and the output of the second key element is connected to the third input of the modulation device, the fourth input of which is connected to the output of the triggering device, the output of the modulation device is connected to the input of the field-forming system, the information carrier being placed on a reflector mounted on a substrate, in addition, the information carrier, reflector and substrate are placed between ring chokes, the distance between which is greater than the sum of the thicknesses microcircuit, reflector and substrate, and the temperature sensor is mounted on the back side of the reflector, and its output is connected to the second input of the power off timer.

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