KR980012007A - Semiconductor wafer drying device - Google Patents

Abstract

A semiconductor wafer drying apparatus suitable for a large diameter semiconductor wafer is disclosed. The present invention relates to an apparatus and method for supplying hot water to a glass bath, which comprises a glass bath on which a semiconductor wafer is placed and which can be moved up and down on a slope, a pure water supply unit for supplying pure water to the glass bath, And an infrared ray heating unit provided on the semiconductor wafer drying unit. Since the semiconductor wafer drying apparatus of the present invention adopts the linting method, it is possible to prevent the particle and wafer breakage due to the large-scale curing and to increase the productivity by reducing the use of the chemical solution.

Description

Semiconductor wafer drying device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer drying apparatus, and more particularly, to a semiconductor wafer drying apparatus suitable for a semiconductor wafer having a large diameter.

Generally, a spin drying (SPIM DRY) drying method and an IPA (hereinafter referred to as "IPA") drying method are used for drying a semiconductor wafer.

The spin dry method is a method of removing pure water (H ₂ O) on a wafer by centrifugal force, and is advantageous in that it is simple as a hardware, has a good productivity, and is easy to maintain. However, there is a problem of generation of particles due to deterioration of an assembly or the like that drives drying by a mechanical operation and a spin dry, and in particular, generation of particles having a small size of 0.2 탆 or less can not be prevented. In addition, problems such as wafer breakage due to large-scale curing of the semiconductor wafer occur.

On the other hand, the IPA drying method is more advantageous than the spin dry drying method on the particle side because it takes the drying method by the chemical action, not by the mechanical method. However, the IPA drying method uses a chemical solution and has a risk of fire because it is used at a high temperature. Also, problems such as particle adsorption occur due to the amount of exhaustion of the chemical solution, and there is a disadvantage that the cost is high because the chemical solution is used.

Accordingly, an object of the present invention is to provide a semiconductor wafer drying apparatus capable of solving the above-mentioned problems.

Figures 1 and 2 are a perspective view and a cross-sectional view of a semiconductor wafer drying apparatus according to the present invention.

In order to accomplish the above object, the present invention provides a glass bass having a cover system on which a semiconductor wafer is placed and which can move up and down on a slope, a pure water supply unit for supplying pure water to the glass bath, And an infrared ray heating unit attached to an upper end of the hot nitrogen supply unit.

Since the semiconductor wafer drying apparatus of the present invention adopts the rinsing method without using a spin dryer or an IPA dry apparatus, the effect of preventing particle and wafer breakage due to large-scale curing and reducing the use of a chemical solution, .

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 are a perspective view and a cross-sectional view of a semiconductor wafer drying apparatus according to the present invention.

1 and 2, the semiconductor wafer drying apparatus of the present invention comprises a glass bath 5 on which a semiconductor wafer 1 is placed and on which a cover system 3 capable of moving up and down is mounted, The hot nitrogen supply unit 9 attached to the upper end of the glass bath 5 and the hot nitrogen supply unit 9 to supply the pure water 13 to the hot nitrogen supply unit 9, And an infrared ray heating unit 11 attached thereto.

Next, a drying method (hereinafter referred to as a "slow drain drying method") using the semiconductor wafer drying apparatus of the present invention will be described.

First, the semiconductor wafer having been subjected to the chemical solution treatment is rinsed with a final rinse bath. The semiconductor wafer thus rinsed is placed in a glass bath, the flow rate of the pure water is appropriately adjusted to the glass bath, and then the cover system mounted on the slope of the glass bath is operated. At this time, four cover systems must be driven at the same time, and since the volume of the inside of the bath decreases with time according to the operation of the cover system, the supply of pure water should be appropriately adjusted. Therefore, as time passes, the height of the pure water from the upper part of the bath to the lower part becomes lower. Next, the wafer is exposed according to the operation of the cover system, and the infrared heating unit is activated at the time of exposure, and hot nitrogen is supplied to completely remove the number of occurrences in the slow drain.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

As described above, the slow drain drying method using the semiconductor wafer drying apparatus of the present invention can remove particles that may occur at the wafer / liquid boundary because the pure water overflows until the dried wafer is finally dried. In addition, since the present invention adopts the rinsing method without using a spin dryer or an IPA dry device, it is possible to simultaneously obtain effects such as prevention of particle and wafer breakage due to large-scale curing, .

Claims (1)

A glass bath on which a semiconductor wafer is placed and equipped with a cover system capable of moving up and down on a slope; A pure water supply unit for supplying pure water to the glass bath; A hot nitrogen supply unit attached to the upper end of the glass bath; And an infrared ray heating unit attached to an upper end of the hot nitrogen supply unit. ※ Note: It is disclosed by the contents of the first application.