KR970018008A - Cvd 시스템 진공 라인의 세척 방법 및 장치 - Google Patents
Cvd 시스템 진공 라인의 세척 방법 및 장치 Download PDFInfo
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- KR970018008A KR970018008A KR1019960041540A KR19960041540A KR970018008A KR 970018008 A KR970018008 A KR 970018008A KR 1019960041540 A KR1019960041540 A KR 1019960041540A KR 19960041540 A KR19960041540 A KR 19960041540A KR 970018008 A KR970018008 A KR 970018008A
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- 238000004140 cleaning Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 title claims 30
- 239000002245 particle Substances 0.000 claims abstract 28
- 239000004065 semiconductor Substances 0.000 claims abstract 4
- 239000007789 gas Substances 0.000 claims 33
- 239000000047 product Substances 0.000 claims 9
- 238000000151 deposition Methods 0.000 claims 8
- 239000012530 fluid Substances 0.000 claims 8
- 230000008021 deposition Effects 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 230000005484 gravity Effects 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 230000002093 peripheral effect Effects 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000006227 byproduct Substances 0.000 claims 2
- 238000005086 pumping Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 claims 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000013618 particulate matter Substances 0.000 abstract 5
- 239000000470 constituent Substances 0.000 abstract 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
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- H01L21/205—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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- B01J2219/245—Plate-type reactors
- B01J2219/2451—Geometry of the reactor
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- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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- B01J2219/2461—Heat exchange aspects
- B01J2219/2467—Additional heat exchange means, e.g. electric resistance heaters, coils
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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- B01J2219/245—Plate-type reactors
- B01J2219/2475—Separation means, e.g. membranes inside the reactor
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- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
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- B01J2219/2491—Other constructional details
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- B01J2219/24—Stationary reactors without moving elements inside
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- Y02C20/00—Capture or disposal of greenhouse gases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
Claims (39)
- 배기 라인 내부에 증착되는 것을 최소화 할 수 있으며, 입구와 출구의 포트가 있는 한개의 용기 챔버와, 특정한 전압이 적용될 때 용기 챔버 내 입자들을 플래즈마 상태로 들뜨게 함으로써 플래즈마의 구성 요소들이 반응하여 용기 챔버를 통해 나갈 수 있는 기제 생성물을 형성할 수 있게 해주는 용기 챔버에 연결된 전극으로 구성된 장치.
- 제1항에 있어서, 용기 챔버의 적어도 일부를 둘러싸는 코일이 전극을 이루는 장치.
- 제2항에 있어서, 나선형 공전 코일이 코일을 이루는 장치.
- 제3항에 있어서, 용기 챔버가 절연재로 만들어진 장치.
- 제4항에 있어서, 절연제가 세라믹 물질인 장치.
- 제3항에 있어서, 용기 챔버를 통과하는 기체의 첫번째 방향으로 경로를 정해주는 첫번째 통로 및 첫번째 방향과 다른 두번째 방향으로 경로를 정해주는 두번째 통로 또한 기체가 용기 챔버 내로 들어간 후 입구 포트의 통과, 첫번째 통로의 통과, 두번째 통로의 통과 후 출구 포트를 통하여 용기 챔버를 나가도록 배열된 첫 번째와 두번째의 통로로 이루어진 용기 챔버를 갖춘 장치.
- 제6항에 있어서, 용기 챔버를 통과하는 기체에 포함된 입자들을 포획할 수 있는 입자 수집 에리어를 형성하도록 첫번째와 두번째 통로가 설계된 장치.
- 제7항에 있어서, 첫번째 방향이 거의 확실하게 두번째 방향의 반대편으로 되어 있는 장치.
- 제3항에 있어서, 용기의 챔버를 통과하는 기체에 포함되어 있는 전하된 입자들을 수집할 수 있는, 용기 챔버와 결합된 정전 콜렉터로 이루어진 장치.
- 제9항에 있어서, 용기 챔버의 내부에 위치한 코일, 코일 내부에 위치한 와이어 및 코일과 와이어에 결합됨으로써, 와이어와 코일 사이에 전위를 형성할 수 있는 수단으로 이루어진 정진 콜렉터를 갖춘 장치.
- 제10항에 있어서, 그 전위가 코일에 입자들을 수집하도록 바이어스된 장치.
- 제10항에 있어서, 그 전위가 와이어에 입자들을 수집하도록 바이어스된 장치.
- 배기 라인 내부에 증착되는 것을 최소화할 수 있으며, 입구, 출구 및 입구와 출구 사이에 있는 콜렉선 챔버를 갖춘 유체 배기관, 유체 배기관을 통해 나가는 기체에서 입자들을 수집하며, 콜렉선 챔버로부터 입자가 유출되는 것을 방지하도록 구성, 배열된 콜렉선 챔버, 콜렉션 챔버를 적어도 일부 둘러싸고 있는 코일, 플래즈마의 구성 요소들이 반응하여 콜렉선 챔버 막으로 펌프될 수 있는 기체 생성물을 만들어내는 플래즈마를 형성하는데 필요한 RF 전력을 공급하며 코일과 결합되어 작동하는 수단 등으로 이루어진 장치.
- 제13항에 있어서, 용기가 콜렉션 챔버와 출구를 이어주는 기체의 통로를 결정시키며, 기체의 통로는 챔버로부터 입자의 유출을 방지하도록 콜렉선 챔버에서 적어도 일부분이 위로 향하도록 되어 있는 장치.
- 제14항에 있어서, 유체 배기관의 입구와 통해 있는 첫번째 하단의 벽과, 첫번째 벽과 연속되며 위쪽방향으로 연장되어 있는 두번째의 주변의 벽으로 결정되는 콜렉선 챔버를 갖춘 장치.
- 제15항에 있어서, 유체 배기관 입구와 통해 있는 안쪽 루멘을 결정해주며, 콜렉션 챔버의 첫번째 벽위로 수직되게 위치하고, 그 벽과 통해 있으며 입자들을 챔버로 보내는데 사용되는 하단의 개구를 갖춘 축 및 축의 주위 경계를 정하고 축과 벽 사이에 생기는 환형의 유체 통로를 결정해주며, 유체 배기관과 통해 있는 주변의 벽으로 이루어진 용기를 갖춘 장치.
- 제16항에 있어서, 기체 생성물을 용기 내에서 내보내는데 쓰이며, 환형의 유체 통로와 통해 있는 출구 포트를 결정해주는 주변의 벽 및 콜렉션 챔버보다 수직 방향으로 위에 위치한 출구 포트를 갖춘 장치.
- 제16항에 있어서, 그 외에도 축과 콜렉션 챔버를 둘러싸고 있는 바깥쪽의 하우징(몸체), 환형의 수직 유체 통로와 통해 있는 수용 챔버 및 용기에서 기체 생성물을 내보내는데 사용되며 수용 챔버와 통해 있는 출구 포트를 결정하는 바깥쪽의 하우징, 그리고 콜렉션 챔버보다 수직으로 밑에 위치한 출구 포트로 이루어진 장치.
- 제14항에 있어서, 그 외에도 용기 챔버를 통과하는 기체에 포함되어 있는 부하된 입자들을 수집하며, 용기 챔버와 결합되어 있는 정전 콜렉터를 갖춘 장치.
- 제19항에 있어서, 정전 콜렉터가 입자 콜렉션 에리어 내부에 위치한 장치.
- 유출되는 기체로부터 입자들을 포획 제거하며, 입구 포트와 출구 포트가 있으며 유출 기체의 통로를 결정해주는 용기 챔버와 기체 통로의 적어도 일부분을 둘러싸는 코일 그리고 코일과 결합하며 또 그 코일에 RF 전력을 공급하여, 기체 통로 내에 존재하는 물질로 플래즈마를 형성한 후, 그 플래즈마의 구성 요소들을 반응시켜 기체 생성물을 형성할 수 있게 해주는 수단으로 이루어진 장치.
- 제21항에 있어서, 중력과 함께 작용하여 입자 콜렉션 에리어를 만들어 내도록 설계된 안쪽의 통로를 포함하는 용기 챔버를 갖춘 장치.
- 제22항에 있어서, 그 외에도 유출 가스에 있는 부하된 입자들을 수집하는 용기 챔버에 결합된 정전 콜렉터를 포함하는 장치.
- 제23항에 있어서, 정전 콜렉터가 입자 콜렉션 에리어 내부에 위치한 장치.
- 공정실을 형성하며, 그 공정실로부터 나오는 배기 가스의 배기용 출구를 갖춘 하우징, 하우징 내부에 위치하며 기판이 놓여지는 서셉터, 기체들을 공정실로 도입시키는데 필요한 기체 분배 시스템, 기판에 열을 가해주는 히터, 그 공정실 내부의 압력을 조정하는데 필요한 진공 시스템, 배기 포트 및 진공 시스템과 결합되며 공정실에서 나오는 기체들이 통과해나가는 배기 라인, 배기 라인 내에 증착물이 누적되는 것을 방지하기 위하여 공정실에서 나오는 기체에 존재하는 입자들을 포획, 제거하는데 사용되며, 배기 가스가 통해 나가는 통로를 결정하는 용기 챔버로 이루어지는 배기 라인과 결합된 입자 콜렉터, 기체 통로의 적어도 한 부분을 둘러싸고 있는 코일 및 RF 진력을 코일에 공급하여 기체 통로 내부에 증착되거나 포획된 입자들을 제거해주는 플래즈마 형성에 필요하며 코일과 결합되어 있는 RF 전원 장치 등으로 이루어진 반도체 공정 장치.
- 반도체 공정실에 연결된 배기 라인 내부에 증착되는 것을 최소화하며, 공정실에서 배기되는 가스가 용기 챔버를 통해 홀러나가며, 그로 인해 기체의 통로가 결정되는 단계 및 용기 챔버 내부에 증착되거나 포획된 입자들을 제거할 목적으로 기체 통로 내의 플래즈마와 부딪치게 하는 단계로 이루어진 방법.
- 제26항에 있어서, 중력과 함께 작용하여 배기 가스에 존재하는 입자들을 기체 통로 내부에 포획하여 수용하도록 설계된 기체 통로가 있는, 용기 챔버를 통해서 배기 가스가 나가게 되는 방법.
- 제27항에 있어서, 그 외에도 배기 가스에 존재하는 입자들을 정전 콜렉터를 이용하여 기체 통로 내부에 포획하는 단계를 포함하는 방법.
- 질화 규소가 화학 증착법에 의해 기판에 증착이 이루어지는 공정실 내에서, 질화 규소 증착으로 인하여 공정실에 결합된 배기 라인 내에 누적될 수 있는 잔류물을 최소화시키며, 공정실에서 배기되는 기체를, 입구와 출구가 있는 유체 배기관을 결정해주는 용기를 통해서 펌프하는 단계, 배기 가스에 존재하는 입자들을 용기의 입구와 출구 사이에 있는 콜렉션 챔버 내에 수집하는 단계, 수집된 입자들을 반응시켜 기체 생성물로 만들 목적으로 RF 전력을 콜렉션 챔버를 둘러싸고 있는 코일에 적용하여 플래즈마를 형성하는 단계 및 용기로부터 기체 생성물을 펌프해 보내는 단계들로 이루어진 방법.
- 제29항에 있어서, 질화 규소 증착 과정에서 생기는 일부만 반응된 규소를 포함하는 생성물과 부산물이 입자들을 이루는 방법.
- 제30항에 있어서, 일부만 반응된 규소를 포함하는 생성물과 부산물이 SixNyHz, SixHy, SiOx및 규소 원소로 이루어지는 방법.
- 제29항에 있어서, 반응체 기체가 공정실로 도입된 후 용기로 펌프되어, 질화 규소 증착 단계로 인하여 증착되는 물질을 부식 및 제거하는 공정실 세척 작업 동안 플래즈마가 형성되는 방법.
- 제32항에 있어서, 공정실의 세척 작업중 플래즈마의 형성을 임의로 켜거나 끄는 방법.
- 제33항에 있어서, 질화 규소 막의 증착 중에는 플래즈마의 형성 작업이 꺼지고(OFF), 공정실 세척 작업 동안에는 켜지는(ON) 방법.
- 제34항에 있어서, 다수의 웨이퍼에 질화 규소층을 증착시킬 목적으로 플래즈마 형성 작업을 켜거나 끄는 순서가 차례대로 이루어지는 방법.
- 제29항에 있어서, 다수의 웨이퍼를 사용하는 순서적인 증착 및 세척 단계중 RF 전력이 코일에 계속적으로 공급되는 방법.
- 제29항에 있어서, 중력을 사용하여 입자들을 콜렉션 챔버에 모으는 수집 단계로 된 방법.
- 제29항에 있어서, 정전력을 사용하여 입자들을 콜렉션 챔버에 모으는 수집단계로 된 방법.
- 제29항에 있어서, 중력과 정전력을 사용하여 입자들을 콜렉션 챔버에 모으는 수집 단계로 된 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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- 1996-09-09 EP EP96306536A patent/EP0767254B1/en not_active Expired - Lifetime
- 1996-09-09 EP EP01106260A patent/EP1132496B1/en not_active Expired - Lifetime
- 1996-09-09 AT AT96306536T patent/ATE210742T1/de not_active IP Right Cessation
- 1996-09-09 DE DE69631349T patent/DE69631349T2/de not_active Expired - Lifetime
- 1996-09-23 KR KR1019960041540A patent/KR100303231B1/ko not_active IP Right Cessation
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US6423176B1 (en) | 1998-04-13 | 2002-07-23 | Nec Corporation | Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles |
KR100362622B1 (ko) * | 1998-04-13 | 2002-11-27 | 닛폰 덴키(주) | 플라즈마 에칭 장치용 파티클 제거 장치 및 파티클 제거 방법 |
US7045465B2 (en) | 1998-04-13 | 2006-05-16 | Nec Electronics Corporation | Particle-removing method for a semiconductor device manufacturing apparatus |
KR100615603B1 (ko) * | 2004-10-18 | 2006-08-25 | 삼성전자주식회사 | 반도체 제조용 확산 설비의 확산로 세정 방법 및 세정용보조구 |
Also Published As
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ATE210742T1 (de) | 2001-12-15 |
US6194628B1 (en) | 2001-02-27 |
DE69617858T2 (de) | 2002-08-29 |
DE69631349D1 (de) | 2004-02-19 |
US6689930B1 (en) | 2004-02-10 |
DE69631349T2 (de) | 2004-11-25 |
DE69617858D1 (de) | 2002-01-24 |
US20010016674A1 (en) | 2001-08-23 |
JPH09181063A (ja) | 1997-07-11 |
EP0767254A1 (en) | 1997-04-09 |
EP0767254B1 (en) | 2001-12-12 |
KR100303231B1 (ko) | 2001-11-30 |
US6680420B2 (en) | 2004-01-20 |
EP1132496B1 (en) | 2004-01-14 |
JP3897382B2 (ja) | 2007-03-22 |
EP1132496A1 (en) | 2001-09-12 |
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