KR960015719A - 이온 충돌을 이용하여 반도체 기판상에 평탄한 층을 형성하기 위한 방법 및 장치 - Google Patents
이온 충돌을 이용하여 반도체 기판상에 평탄한 층을 형성하기 위한 방법 및 장치 Download PDFInfo
- Publication number
- KR960015719A KR960015719A KR1019950034210A KR19950034210A KR960015719A KR 960015719 A KR960015719 A KR 960015719A KR 1019950034210 A KR1019950034210 A KR 1019950034210A KR 19950034210 A KR19950034210 A KR 19950034210A KR 960015719 A KR960015719 A KR 960015719A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- semiconductor substrate
- flat layer
- ion bombardment
- bombardment
- Prior art date
Links
- 238000010849 ion bombardment Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32209594A | 1994-10-12 | 1994-10-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960015719A true KR960015719A (ko) | 1996-05-22 |
Family
ID=23253390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950034210A KR960015719A (ko) | 1994-10-12 | 1995-10-06 | 이온 충돌을 이용하여 반도체 기판상에 평탄한 층을 형성하기 위한 방법 및 장치 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0707339A3 (ko) |
JP (1) | JPH08213322A (ko) |
KR (1) | KR960015719A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100411144B1 (ko) * | 2002-02-26 | 2003-12-24 | 서울대학교 공과대학 교육연구재단 | 아르곤-수소 플라즈마를 이용한 무플럭스 솔더 범프의 리플로우 방법 |
KR101373733B1 (ko) * | 2007-03-08 | 2014-03-14 | 삼성전자 주식회사 | 절연물 증착을 사용한 집적 회로 구조 형성 방법 및 절연물갭 필링 기술 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6104596A (en) * | 1998-04-21 | 2000-08-15 | Applied Materials, Inc. | Apparatus for retaining a subtrate in a semiconductor wafer processing system and a method of fabricating same |
JP3069336B2 (ja) * | 1998-12-04 | 2000-07-24 | キヤノン販売株式会社 | 成膜装置 |
US10304732B2 (en) * | 2017-09-21 | 2019-05-28 | Applied Materials, Inc. | Methods and apparatus for filling substrate features with cobalt |
CN112635305A (zh) * | 2020-11-24 | 2021-04-09 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0544648B1 (en) * | 1985-05-13 | 1997-04-09 | Nippon Telegraph And Telephone Corporation | Method for forming a planarized Al thin film |
US4756810A (en) | 1986-12-04 | 1988-07-12 | Machine Technology, Inc. | Deposition and planarizing methods and apparatus |
JPH07105441B2 (ja) * | 1992-11-30 | 1995-11-13 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1995
- 1995-10-06 KR KR1019950034210A patent/KR960015719A/ko not_active Application Discontinuation
- 1995-10-12 EP EP95116135A patent/EP0707339A3/en not_active Withdrawn
- 1995-10-12 JP JP7264377A patent/JPH08213322A/ja not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100411144B1 (ko) * | 2002-02-26 | 2003-12-24 | 서울대학교 공과대학 교육연구재단 | 아르곤-수소 플라즈마를 이용한 무플럭스 솔더 범프의 리플로우 방법 |
KR101373733B1 (ko) * | 2007-03-08 | 2014-03-14 | 삼성전자 주식회사 | 절연물 증착을 사용한 집적 회로 구조 형성 방법 및 절연물갭 필링 기술 |
Also Published As
Publication number | Publication date |
---|---|
EP0707339A2 (en) | 1996-04-17 |
EP0707339A3 (en) | 1997-10-08 |
JPH08213322A (ja) | 1996-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |