Nothing Special   »   [go: up one dir, main page]

KR950004656A - Laser diode manufacturing method - Google Patents

Laser diode manufacturing method Download PDF

Info

Publication number
KR950004656A
KR950004656A KR1019930013337A KR930013337A KR950004656A KR 950004656 A KR950004656 A KR 950004656A KR 1019930013337 A KR1019930013337 A KR 1019930013337A KR 930013337 A KR930013337 A KR 930013337A KR 950004656 A KR950004656 A KR 950004656A
Authority
KR
South Korea
Prior art keywords
forming
layer
laser diode
cladding layer
aigaas
Prior art date
Application number
KR1019930013337A
Other languages
Korean (ko)
Inventor
조명환
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930013337A priority Critical patent/KR950004656A/en
Publication of KR950004656A publication Critical patent/KR950004656A/en

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 레이저 다이오드 제조방법에 관한 것으로 AIGaAs계 물질을 사용하여 DC-PBH(Bouble Channeled Planner Buried Heterostructure) 구조의 반도체 레이저 다이오드 제조시, DH(Double Heterostructure) 구조를 만들고 도랑을 형성시켜 메사구조를 만들고 채널을 형성할때 채널의 폭을 200㎛ 이상이 되도록 도랑의 폭을 넓게 형성시켜 메사구조 형성후, LPE법으로 매립층 형성시 AIGaAs의 산화문제 및 도랑의 끝뜨머리 부분에서의 매립층의 끊어짐등의 문제점을 개선하여 반도체 레이저 다이오드의 재현성을 증대되도록 하였다.The present invention relates to a method for manufacturing a semiconductor laser diode, and when manufacturing a semiconductor laser diode having a DC-PBH structure using an AIGaAs-based material, a double-heterostructure (DH) structure and a groove are formed to form a mesa structure. When the channel is formed, the width of the trench is made wide so that the width of the channel is 200 μm or more, and then the mesa structure is formed. The problem was improved to increase the reproducibility of the semiconductor laser diode.

Description

레이저 다이오드 제조방법Laser diode manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도 (A) - (C)는 본 발명의 레이저 다이오드 공정단면도.2 (A)-(C) are cross-sectional views of a laser diode process of the present invention.

Claims (2)

기판(1)상에 제 1 클래드층(2), 활성층(3), 제 2 클래드층(4), 제 1 캡층(5)을 차례로 형성하여 이중헤테로 구조를 형성하는 공정, 상기 제 1 캡층(5), 제 2 클래드층(4), 활성층(3), 제 1 클래드층(2), 기판(1)을 포토 - 에칭공정으로 식각하여 넓은 폭을 갖는 도랑을 상호일정간격 격리시켜 이중채널을 형성하고 메사(6)를 형성하는 공정, 상기 노출된 전표면에 매립층으로서 P-AIGaAs(7), n-AIGaAs(8)를 증착하고, 연속하여 P-GaAs로 제 2 캡층(9)을 형성하는 공정, 상기 공정후 상, 하부전극을 형성하고 양채널의 중간부위를 절단하여 단위소자로 함을 특징으로 하는 반도체 레이저 다이오드 제조방법.Forming a double hetero structure by sequentially forming a first cladding layer 2, an active layer 3, a second cladding layer 4, and a first capping layer 5 on the substrate 1, the first capping layer ( 5) The second cladding layer 4, the active layer 3, the first cladding layer 2, and the substrate 1 are etched by a photo-etching process to isolate the grooves having a wide width from each other at regular intervals. Forming and mesa (6), depositing P-AIGaAs (7) and n-AIGaAs (8) as buried layers on the exposed entire surface, and subsequently forming a second cap layer (9) from P-GaAs. And forming the upper and lower electrodes after the process and cutting the middle portions of both channels into unit devices. 제 1 항에 있어서, 이중채널은 각각 200㎛ 이상의 폭으로 형성함을 특징으로 하는 반도체 레이저 다이오드 제조방법.The method of manufacturing a semiconductor laser diode according to claim 1, wherein the dual channels are each formed to have a width of 200 µm or more. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930013337A 1993-07-15 1993-07-15 Laser diode manufacturing method KR950004656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930013337A KR950004656A (en) 1993-07-15 1993-07-15 Laser diode manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930013337A KR950004656A (en) 1993-07-15 1993-07-15 Laser diode manufacturing method

Publications (1)

Publication Number Publication Date
KR950004656A true KR950004656A (en) 1995-02-18

Family

ID=67142696

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930013337A KR950004656A (en) 1993-07-15 1993-07-15 Laser diode manufacturing method

Country Status (1)

Country Link
KR (1) KR950004656A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7934599B2 (en) 2004-09-24 2011-05-03 Seo Bong Recycling Co., Ltd. Method for separation of construction waste

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7934599B2 (en) 2004-09-24 2011-05-03 Seo Bong Recycling Co., Ltd. Method for separation of construction waste

Similar Documents

Publication Publication Date Title
KR970067957A (en) Gallium nitride compound semiconductor light emitting device and manufacturing method thereof
KR980006668A (en) Optical semiconductor device and manufacturing method of optical semiconductor device
KR950004656A (en) Laser diode manufacturing method
KR890013839A (en) Semiconductor laser device and manufacturing method thereof
JPS60169184A (en) Semiconductor laser
KR920020797A (en) Semiconductor laser
DE3877973D1 (en) LASER DIODE WITH BURNED ACTIVE LAYER AND LATERAL CURRENT LIMITATION AND METHOD FOR THE PRODUCTION THEREOF.
KR950004657A (en) Semiconductor laser diode manufacturing method
KR950012878A (en) Semiconductor laser device and its manufacturing method
KR960016034A (en) Laser diode manufacturing method
KR920020795A (en) Semiconductor laser diode manufacturing method
KR970024405A (en) Laser diode manufacturing method
KR960006172A (en) Manufacturing method of laser diode
KR960027108A (en) Laser diode manufacturing method
KR950012787A (en) Semiconductor laser device and manufacturing method thereof
KR940008174A (en) Manufacturing method of semiconductor laser diode
JPS58148481A (en) Semiconductor laser having embedded heterogeneous structure
KR960002981A (en) Semiconductor laser diode and manufacturing method thereof
JPS622479B2 (en)
JPS57172790A (en) Semiconductor laser device
JPH05283736A (en) Light emitting diode
KR960006174A (en) Semiconductor laser diode manufacturing method
KR950012917A (en) Manufacturing method of laser diode
KR960002994A (en) Semiconductor laser diode and manufacturing method thereof
KR940003109A (en) Light emitting diode and manufacturing method

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid