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KR920010802A - 시료흡착유지장치 - Google Patents

시료흡착유지장치 Download PDF

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Publication number
KR920010802A
KR920010802A KR1019910020334A KR910020334A KR920010802A KR 920010802 A KR920010802 A KR 920010802A KR 1019910020334 A KR1019910020334 A KR 1019910020334A KR 910020334 A KR910020334 A KR 910020334A KR 920010802 A KR920010802 A KR 920010802A
Authority
KR
South Korea
Prior art keywords
holding device
adsorption holding
sample adsorption
sample
pipe
Prior art date
Application number
KR1019910020334A
Other languages
English (en)
Other versions
KR950009622B1 (ko
Inventor
간지 오자와
유끼다까 소노다
Original Assignee
아라이 가즈오
가부시키가이샤 신가와
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아라이 가즈오, 가부시키가이샤 신가와 filed Critical 아라이 가즈오
Publication of KR920010802A publication Critical patent/KR920010802A/ko
Application granted granted Critical
Publication of KR950009622B1 publication Critical patent/KR950009622B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens or the like for the charge within the furnace
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S165/00—Heat exchange
    • Y10S165/90—Cooling towers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

내용 없음

Description

시료흡착유지장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예를 예시하는 정면도,
제2도는 제1도의 평면도,
제3도는 에어냉각장치의 단면도.

Claims (5)

  1. 시료를 가열수단을 구비한 스테이지상에 진공펌프에 의한 진공흡착에 의해 유지하는 시료흡착유지장치에 있어서, 상기 스테이지와 상기 진공 펌프를 연결하는 파이프 중간에 에어냉각장치를 설치한 것을 특징으로 하는 시료흡착유지장치.
  2. 제1항에 있어서, 상기 에어냉각장치는 진공에어가 통과하는 나선형상으로 감겨진 파이프와, 이 파이프를 강제냉각시키기 위한 팬으로 이루어진 것을 특징으로 하는 시료흡착유지장치.
  3. 제2항에 있어서, 상기 나선형상의 파이프는 가는 노선과 오는 노선의 2중구조로 이루어지는 것을 특징으로 하는 시료흡착유지장치.
  4. 제2항 또는 3항에 있어서, 상기 나선형상의 파이프는 열차폐판의 바깥쪽에 배열설치되어 있는 것을 특징으로 하는 시료흡착유지장치.
  5. 제1항에 있어서, 상기 에어냉각장치는 진공에어의 흐름이 사행되도록 간막이판으로 간막이된 냉각박스와, 이 냉각박스를 강제 냉각시키기 위한 팬으로 이루어지는 것을 특징으로 하는 시료흡착유지장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910020334A 1990-11-16 1991-11-15 본딩장치에 있어서의 반도체 시료흡착유지장치 KR950009622B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-308717 1990-11-16
JP30871790A JP2923804B2 (ja) 1990-11-16 1990-11-16 試料吸着保持装置

Publications (2)

Publication Number Publication Date
KR920010802A true KR920010802A (ko) 1992-06-27
KR950009622B1 KR950009622B1 (ko) 1995-08-25

Family

ID=17984434

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910020334A KR950009622B1 (ko) 1990-11-16 1991-11-15 본딩장치에 있어서의 반도체 시료흡착유지장치

Country Status (3)

Country Link
US (1) US5306139A (ko)
JP (1) JP2923804B2 (ko)
KR (1) KR950009622B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010002964A (ko) * 1999-06-15 2001-01-15 강이주 맥반석을 이용한 폐수의 중금속처리방법
KR20010002965A (ko) * 1999-06-14 2001-01-15 강이주 맥반석을 이용한 수용성염료 및 인염폐수처리방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5767423A (en) * 1996-12-04 1998-06-16 Eastman Kodak Company Sample holder for accelerated fade apparatus and method of its use
JP4902986B2 (ja) * 2005-12-01 2012-03-21 株式会社東京精密 プローバ、及び、プローバのウェハステージ加熱、又は、冷却方法
HUP0900749A2 (en) * 2009-12-03 2012-01-30 Gea Egi Energiagazdalkodasi Zrt Cooling system for power plant
KR101294723B1 (ko) * 2011-07-01 2013-08-19 아셈텍(주) 이산화탄소 응축장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749388A (en) * 1980-09-08 1982-03-23 Japanese National Railways<Jnr> Induced voltage detector for linear synchronous motor
IT1135516B (it) * 1981-02-18 1986-08-27 Nuovo Pignone Spa Condensatore perfezionato di vapore con raffreddamento ad aria
US4483392A (en) * 1982-04-01 1984-11-20 Xchanger, Inc. Air to air heat exchanger
US4657070A (en) * 1984-02-15 1987-04-14 Hudson Products Corporation Air-cooled vapor condensers
US4872835A (en) * 1986-07-24 1989-10-10 Hewlett-Packard Company Hot chuck assembly for integrated circuit wafers
US4721462A (en) * 1986-10-21 1988-01-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Active hold-down for heat treating
US4867231A (en) * 1987-11-09 1989-09-19 Bottum Edward W Air to air heat exchange structure and method
EP0464874B1 (en) * 1987-11-17 1996-02-28 Shinwa Sangyo Co., Ltd. Heat exchanger for cooling tower

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010002965A (ko) * 1999-06-14 2001-01-15 강이주 맥반석을 이용한 수용성염료 및 인염폐수처리방법
KR20010002964A (ko) * 1999-06-15 2001-01-15 강이주 맥반석을 이용한 폐수의 중금속처리방법

Also Published As

Publication number Publication date
US5306139A (en) 1994-04-26
KR950009622B1 (ko) 1995-08-25
JP2923804B2 (ja) 1999-07-26
JPH04181753A (ja) 1992-06-29

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