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KR910006707B1 - Light emitting diodes and manufacturing method - Google Patents

Light emitting diodes and manufacturing method Download PDF

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Publication number
KR910006707B1
KR910006707B1 KR1019880016844A KR880016844A KR910006707B1 KR 910006707 B1 KR910006707 B1 KR 910006707B1 KR 1019880016844 A KR1019880016844 A KR 1019880016844A KR 880016844 A KR880016844 A KR 880016844A KR 910006707 B1 KR910006707 B1 KR 910006707B1
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layer
light emitting
electrode
gaas
type
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KR1019880016844A
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Korean (ko)
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KR900011054A (en
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권기영
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삼성전자 주식회사
안시환
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Priority to JP1178198A priority patent/JPH02174273A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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Abstract

내용 없음.No content.

Description

발광다이오드 및 제조방법Light emitting diodes and manufacturing method

제1a∼c도는 종래 발광다이오드의 전극모양 평면도 및 발광부의 단면 개략도 및 유효 발광부위 단면 개략도.1A to 1C are a plan view of an electrode shape of a conventional light emitting diode, a cross sectional schematic of a light emitting portion, and a cross sectional schematic of an effective light emitting portion.

제2a∼c도는 본 발명 발광다이오드의 전극모양 평면 및 발광부위 단면 개략도 및 유효 발광부위 단면 개략도.2A to 2C are cross-sectional schematics of an electrode-like plane and a light emitting portion of the light emitting diode of the present invention, and a cross-sectional schematic view of an effective light emitting portion.

제3a∼c도는 본 발명 발광다이오드의 제조공정도.3A to 3C are manufacturing process diagrams of the light emitting diode of the present invention.

제4a∼c도는 본 발명 발광다이오드의 타실시 제조공정도.4a to c are manufacturing steps of another embodiment of the light emitting diode of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : n형 또는 p형의 전극 2 : n형 또는 p형의 GaAs층1: n-type or p-type electrode 2: n-type or p-type GaAs layer

3 : p형 또는 n형의 GaAs층 4 : p형 또는 n형의 GaAs 기판3: p-type or n-type GaAs layer 4: p-type or n-type GaAs substrate

5 : p형 또는 n형의 전극 6 : p형 GaAs층5: p-type or n-type electrode 6: p-type GaAs layer

7 : p형 AlGaAs층 8 : n형 또는 p형의 GaAs층7: p-type AlGaAs layer 8: n-type or p-type GaAs layer

9 : n형 AlGaAs층 10 : n형 GaAs층9: n-type AlGaAs layer 10: n-type GaAs layer

11 : p형 전극 12 : n형 전극11 p-type electrode 12 n-type electrode

본 발명은 반도체에 있어서 발광다이오드 및 그의 제조방법에 관한 것으로, 특히 발광효율을 높이고 출력을 높이기 위해 p형 혹은 n형 전극을 형성함에 있어서, 금속선 배선(wire bonding)을 위한 전극부위는 원형으로 최소화하고, 원형전극 주위에 가는 폭의 선 전극을 둘러 구성한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode and a method of manufacturing the same in a semiconductor. In particular, in forming a p-type or n-type electrode to increase luminous efficiency and output power, an electrode portion for wire bonding is minimized to a circular shape. The thin wire electrode is formed around the circular electrode.

종래의 발광다이오드는 첨부된 도면 제1a∼c도같이, 금속선 배선을 위해 전극(1)을 통상 100∼200㎛의 지름을 갖게 하여, 유효 발광부위가 실제의 발광부위보다 매우 좁은 영역을 갖게 됨으로써 효율과 출력이 저하되었다.Conventional light emitting diodes, as shown in the attached drawings 1a to c, have a diameter of 100 to 200 mu m for the electrode 1 in general, so that the effective light emitting region has a very narrow area than the actual light emitting region. Efficiency and power have fallen.

상기의 제1a도는 일반적인 발광다이오드의 평면도로써 n형 또는 p형의 GaAs층(2)상에 n형 또는 p형의 전극(1)이 형성됨을 도시한 것이다. 또한 제1b도는 일반적인 발광다이오드의 발광부위 단면 개략도로써, 전극(5)이 하부에 형성된 기판(4)상에 서로 다른 형의 불순물을 포함한 GaAs층(3)(2)이 성장되고, GaAs층(2)상에 전극(1)이 형성됨을 나타낸 것으로 빗금부분은 발광부위를 나타낸 것이다. 제1c도는 종래 발광다이오드의 유효 발광부위를 나타낸 단면 개략도로써, GaAs층(2)(3)의 접합부분중 빗금친 부분이 유효 발광부를 나타내며 전체 발광부위에 비교하여 매우 좁다.FIG. 1A shows a plan view of a general light emitting diode, in which an n-type or p-type electrode 1 is formed on an n-type or p-type GaAs layer 2. FIG. 1B is a schematic cross-sectional view of a light emitting region of a general light emitting diode, in which GaAs layers 3 and 2 containing impurities of different types are grown on a substrate 4 on which electrodes 5 are formed. The electrode 1 is formed on the 2), and the hatched portion represents the light emitting portion. FIG. 1C is a cross-sectional schematic diagram showing an effective light emitting portion of a conventional light emitting diode, wherein the hatched portions of the junction portions of the GaAs layers 2 and 3 represent the effective light emitting portions and are very narrow in comparison with the entire light emitting regions.

본 발명은 이와 같은 문제점을 감안하여, p형 또는 n형 전극의 모양을, 금속선 배선을 위해 원형으로 최소화한 부분의 주위에 가는 폭의 선 전극을 형성하여 유효 발광부위를 넓힘으로써, 발광다이오드의 출력과 효율을 높일 수 있도록 한 것으로 이를 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.In view of the above problems, the present invention forms a thin line electrode around a portion where the shape of a p-type or n-type electrode is minimized in a circle for metal wire wiring, thereby widening the effective light emitting region, In order to increase the output and efficiency to be described in detail by the accompanying drawings as follows.

첨부된 도면 제2a∼c도는 본 발명 발광다이오드의 전극모양 평면도 및 발광부위 단면도와 유효 발광부위 단면도를 나타낸 단면 개략도로써, 전극(5)이 하부에 형성된 기판(4)상에 서로 다른 형의 GaAs층(3)(2)이 성장되고 GaAs층(2)상에 전극(1)이 형성됨에 있어서, 전극(1)을 금속선 배선(wire bonding)을 하기위한 전극부분은 원형으로 최소화하고, 유효 발광부위를 향상시키기 위한 전극부분(1)을 금속선 배선을 위한 원형 전극부분(1)의 주위에 형성시킨 것이다. 제2a도에서 w는 전극폭을 나타내며 수십 ㎛의 수치를 갖도록 하고, 제2b도의 d는 전극간의 거리를 나타내는 것으로 GaAs층(2)의 두께 및 저항률과 관련된다.2A to 2C are cross-sectional schematic diagrams showing an electrode shape plan view, a light emitting portion cross-section, and an effective light emitting portion cross-sectional view of the light emitting diode of the present invention, wherein different types of GaAs are formed on the substrate 4 on which the electrode 5 is formed. In the growth of the layers 3 and 2 and the formation of the electrodes 1 on the GaAs layer 2, the electrode portions for metal wire bonding of the electrodes 1 are minimized in a circle and effective light emission is achieved. The electrode part 1 for improving the site | part is formed around the circular electrode part 1 for metal wire wiring. In FIG. 2A, w represents an electrode width and has a numerical value of several tens of micrometers, and d in FIG. 2B represents a distance between electrodes, which is related to the thickness and resistivity of the GaAs layer 2.

이상에서와 같은 구조의 본 발광다이오드의 제조방법을 상세히 설명하면 다음과 같다.Hereinafter, a method of manufacturing the light emitting diode having the structure as described above will be described in detail.

제3a도와 같은 n형 혹은 p형의 GaAs 기판(4)상에 이와 같은 형의 GaAs층(3)을 성장하고, 그 위에 GaAs층(3)과 다른 형의 GaAs층(2)을 성장하여 GaAs층(3) 및 GaAs층(2)의 경계면에 의한 발광부위를 형성하며, 제3b도와 같이 전극(5)을 한쪽면에 성장한 후, 제3c도와 같이 전극(1)을 형성한다. 상기의 전극(1) 중앙에 금속선 배선(wire bonding)을 하기 위한 원형 모양을 최소화시켜 형성시켜 주고, 이로부터 전류 주입을 효과적으로 하기 위하여 원형주위에 폭 w를 갖는 배선을 둘러준 후 원형부분과 주위 선 부분의 간격 d를 적절히 조절함으로써 유효 발광부위가 최대가 되도록 한다. 즉 전극에서 주입된 운반자가 GaAs층(2)을 퍼져서 제2도의 빗금친 발광부위에서 재결합하게 된다. 이때 유효 발광부위는 제2c도와 같이 형성되어서 다이오드의 효율과 출력을 증가시켜 준다.A GaAs layer 3 of this type is grown on an n-type or p-type GaAs substrate 4 as shown in FIG. 3A, and a GaAs layer 2 of a different type from the GaAs layer 3 is grown thereon. A light emitting region is formed by the interface between the layer 3 and the GaAs layer 2, and the electrode 5 is grown on one side as shown in FIG. 3b, and then the electrode 1 is formed as shown in FIG. 3c. In the center of the electrode (1) to minimize the circular shape for the metal wire wiring (wire bonding) is formed, and in order to effectively inject the current from the surrounding the wiring having a width w around the circle after the circular portion and the surrounding By appropriately adjusting the distance d between the line portions, the effective light emitting portion is maximized. That is, the carrier injected from the electrode spreads the GaAs layer 2 and recombines at the hatched light emitting part of FIG. In this case, the effective light emitting part is formed as shown in FIG. 2C to increase the efficiency and output of the diode.

또한 제4a∼c도는 더블 헤테로(double hetero) 접합을 갖는 발광다이오드의 제조 공정도로써, 제4a도와 같이 GaAs 기판(10)위에 GaAlAs 층(9)을 상기의 GaAs 기판(10)과 같은 형으로 성장하고, 그 위에 활성층(8)을 성장한 다음 다시 GaAlAs층(9)와 다른 형의 GaAlAs층(7)을 성장하며, 캡층으로 GaAlAs층(7)과 같은 형의 GaAs층(6)을 기른 다음 제2a도와 같은 모양의 전극을 형성시켜 주기 위하여, 사진식각 공정을 통하여 전극과 같은 모양으로서 전극보다 조금 크게 캡층(6)과 투과층(7)을 동시에 에칭하고 전극(11)을 제2a도와 같은 모양으로 형성하고, 반대편에는 전극(12)를 형성시켜준다.4A to C are manufacturing process diagrams of a light emitting diode having a double hetero junction, in which a GaAlAs layer 9 is grown on a GaAs substrate 10 in the same manner as the GaAs substrate 10 as shown in FIG. 4A. Then, the active layer 8 is grown thereon, and the GaAlAs layer 9 and the GaAlAs layer 7 having a different type are grown again, and as a cap layer, a GaAs layer 6 having the same type as the GaAlAs layer 7 is grown. In order to form an electrode having a shape as shown in FIG. 2a, the cap layer 6 and the transmission layer 7 are simultaneously etched a little larger than the electrode through a photolithography process, and the electrode 11 is as shown in FIG. 2a. The electrode 12 is formed on the opposite side.

상기에서 캡층(6)과 투과층(7)을 에칭함은 옴(ohm)성 접촉을 위해서 캡층(6)이 필요하나 이 층이 흡수층이므로 제거하는 것이고, 발광부위에서 나온 빛은 투과층(7)을 통하여 방사된다.Etching the cap layer 6 and the transmission layer 7 in the above is required for the ohmic (ohm) contact cap layer (6), but this layer is an absorbing layer is removed, and the light emitted from the light emitting portion is the transmission layer (7) Is emitted through

이상에서와 같은 구성에 의해 제조된 본 발명 발광다이오드는 전극모양을 금속선 배선을 위하여 원형으로 최소화한 부분의 주위에 가는 폭의 선 전극을 두름으로써, 발광부위를 넓히고 유효 발광부위가 차지하는 면적을 크게 해주어 발광효율과 발광출력을 증가시킬 수 있는 것이다.The light emitting diode of the present invention manufactured by the above configuration has a thin line electrode around a portion of which the shape of the electrode is minimized in a circle for metal wire wiring, thereby widening the light emitting region and increasing the area occupied by the effective light emitting region. It can increase the luminous efficiency and luminous output.

Claims (3)

발광다이오드에 있어서, 전극의 모양으로 금속선 배선(wire bonding)을 위한 원형부분이 있고 이로부터 일정의 폭을 갖는 배선이 여러방향 갈라져 나와 중앙의 원형부분의 둘레에 일정거리를 두고 원형의 테두리 형태로 배열됨을 특징으로 하는 발광다이오드.In the light-emitting diode, there is a circular portion for wire bonding in the shape of an electrode, and a wire having a predetermined width therefrom is diverged in various directions to form a circular border with a predetermined distance around the central circular portion. Light emitting diodes, characterized in that arranged. n형 또는 p형의 GaAs 기판(4)상에 이와 같은 형의 GaAs층(3)을 성장하고, 그 위에 GaAs층(3)과 다른 형의 GaAs층(2)을 성장하여 GaAs층(3) 및 GaAs층(2)의 경계면에 의한 발광부위를 형성하며, 상기의 GaAs 기판(4) 하부에 전극(5)을 성장한 후 GaAs층(2)의 상부에 중앙 원형부분 및 테두리 환형부분과 이를 잇는 배선으로 된 전극(1)을 형성하여 제조함을 특징으로 하는 발광다이오드의 제조방법.A GaAs layer 3 of this type is grown on an n-type or p-type GaAs substrate 4, and a GaAs layer 2 of a different type from the GaAs layer 3 is grown thereon to form a GaAs layer 3 And forming a light emitting region by the interface of the GaAs layer 2, growing the electrode 5 under the GaAs substrate 4, and connecting the central circular portion and the edge annular portion on the GaAs layer 2. A method of manufacturing a light emitting diode, characterized by forming an electrode (1) made of wiring. GaAs 기판(10)위에 GaAlAs층(9)을 성장하고, 그 위에 활성층(8)을 성장한 후 다시 GaAlAs층(9)과 다른 형의 GaAlAs층(7)을 성장하며, 캡층으로 GaAlAs층(7)과 같은 형의 GaAs층(6)을 기른 다음 사진식각 공정을 통하여 캡층(6)과 투과층(7)을 동시에 에칭하고, 상기의 GaAs 기판(10) 하부에 전극(12)을 형성함과 아울러, GaAs층(6)의 상부에 중앙 원형부분 및 테두리 환형부분과 이를 잇는 배선으로 된 전극(11)을 형성시켜 제조함을 특징으로 하는 발광다이오드의 제조방법.The GaAlAs layer 9 is grown on the GaAs substrate 10, the active layer 8 is grown thereon, and the GaAlAs layer 7 which is different from the GaAlAs layer 9 is grown again, and the GaAlAs layer 7 is used as a cap layer. After growing a GaAs layer 6 of the same type as described above, the cap layer 6 and the transmission layer 7 are simultaneously etched through a photolithography process, and the electrode 12 is formed below the GaAs substrate 10. The manufacturing method of the light emitting diode, characterized in that by forming an electrode 11 of the center circular portion and the annular annular portion and the wiring connecting them to the upper portion of the GaAs layer (6).
KR1019880016844A 1988-12-17 1988-12-17 Light emitting diodes and manufacturing method KR910006707B1 (en)

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Application Number Priority Date Filing Date Title
KR1019880016844A KR910006707B1 (en) 1988-12-17 1988-12-17 Light emitting diodes and manufacturing method
JP1178198A JPH02174273A (en) 1988-12-17 1989-07-12 Light-emitting diode and manufacture thereof

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Application Number Priority Date Filing Date Title
KR1019880016844A KR910006707B1 (en) 1988-12-17 1988-12-17 Light emitting diodes and manufacturing method

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KR900011054A KR900011054A (en) 1990-07-11
KR910006707B1 true KR910006707B1 (en) 1991-08-31

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US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JP2001274456A (en) 2000-01-18 2001-10-05 Sharp Corp Light emitting diode
KR100714638B1 (en) * 2006-02-16 2007-05-07 삼성전기주식회사 Single-sided luminescent LEDs and methods

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JPS5112782A (en) * 1974-07-22 1976-01-31 Tokyo Shibaura Electric Co

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