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KR900012361A - Floating gate memory cells and devices and methods for manufacturing the same - Google Patents

Floating gate memory cells and devices and methods for manufacturing the same

Info

Publication number
KR900012361A
KR900012361A KR1019890000955A KR890000955A KR900012361A KR 900012361 A KR900012361 A KR 900012361A KR 1019890000955 A KR1019890000955 A KR 1019890000955A KR 890000955 A KR890000955 A KR 890000955A KR 900012361 A KR900012361 A KR 900012361A
Authority
KR
South Korea
Prior art keywords
manufacturing
methods
devices
same
memory cells
Prior art date
Application number
KR1019890000955A
Other languages
Korean (ko)
Other versions
KR0128063B1 (en
Inventor
에이.에스퀴벨 에이저리코
티.미첼 알랜
엘.리겔라 하워드
Original Assignee
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텍사스 인스트루먼츠 인코포레이티드 filed Critical 텍사스 인스트루먼츠 인코포레이티드
Publication of KR900012361A publication Critical patent/KR900012361A/en
Application granted granted Critical
Publication of KR0128063B1 publication Critical patent/KR0128063B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6894—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having one gate at least partly in a trench
KR1019890000955A 1988-01-29 1989-01-28 Floating gate memory cell and device and manufacturing method thereof KR0128063B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14974488A 1988-01-29 1988-01-29
US149744 1988-01-29

Publications (2)

Publication Number Publication Date
KR900012361A true KR900012361A (en) 1990-08-03
KR0128063B1 KR0128063B1 (en) 1998-04-02

Family

ID=22531614

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890000955A KR0128063B1 (en) 1988-01-29 1989-01-28 Floating gate memory cell and device and manufacturing method thereof

Country Status (2)

Country Link
JP (1) JPH025487A (en)
KR (1) KR0128063B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100804179B1 (en) * 2005-01-28 2008-02-18 인피니언 테크놀로지스 아게 Integrated semiconductor memory and method having a device of non-volatile memory cells

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007517386A (en) * 2003-12-19 2007-06-28 インフィネオン テクノロジーズ アクチエンゲゼルシャフト BRIDGE FIELD EFFECT TRANSISTOR MEMORY CELL, DEVICE HAVING THE CELL, AND METHOD FOR MANUFACTURING BRIDGE FIELD EFFECT TRANSISTOR MEMORY CELL

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100804179B1 (en) * 2005-01-28 2008-02-18 인피니언 테크놀로지스 아게 Integrated semiconductor memory and method having a device of non-volatile memory cells

Also Published As

Publication number Publication date
JPH025487A (en) 1990-01-10
KR0128063B1 (en) 1998-04-02

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