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KR890003982A - 다이아몬드, 도우프된 다이아몬드, 다이아몬드-큐빅 질화붕소 복합필름의 제조 방법 - Google Patents

다이아몬드, 도우프된 다이아몬드, 다이아몬드-큐빅 질화붕소 복합필름의 제조 방법 Download PDF

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Publication number
KR890003982A
KR890003982A KR1019880010481A KR880010481A KR890003982A KR 890003982 A KR890003982 A KR 890003982A KR 1019880010481 A KR1019880010481 A KR 1019880010481A KR 880010481 A KR880010481 A KR 880010481A KR 890003982 A KR890003982 A KR 890003982A
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South Korea
Prior art keywords
hydrogen
diamond
containing gas
substrate
region
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KR1019880010481A
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English (en)
Inventor
브이.데스판디 찬드라
에프.분사 로인탄
제이.도어 한스
Original Assignee
원본미기재
더 리젠트 오브 더 유니버시티 오브 캘리-포니아
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Publication of KR890003982A publication Critical patent/KR890003982A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

내용 없음

Description

다이아몬드, 도우프된 다이아몬드, 다이아몬드-큐빅 질화붕소 복합필름의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 전공 챔버, 및 발명을 수행하기에 적합하고 본 발명 장치의 바람직한 실시양태에 포함시키기에 적합한 관련 장치의 수직 단면도이다.

Claims (19)

  1. 기질을 진공중에 지지시키고; 탄소원을 증발시켜 탄소원 및 기질사이의 영역(zone)에 탄소증기를 생성하고; 수소함유 기체를 상기 영역으로 도입시키고; 상기영역에 전기장을 생성시키고 전자를 상기 영역으로 편향시켜 탄소증기 및 수소함유 기체를 이온화 시키고 이온화된 탄소증기 및 수소함유 기체를 반응시켜 다이아몬드 전구체를 형성시킨후 언급된 기질상에 침착deposit)시키고 다이아몬드 함유 필름을 형성함을 특징으로 하여, 다이아몬드 함유 필름을 기질상에 침착시키는 방법.
  2. 제1항에 있어서, 탄소원이 그라파이트인 방법.
  3. 제2항에 있어서, 그라파이트가 전자빔(beam)에 의해 증발되는 방법.
  4. 제1항에 있어서, 수소함유 기체가 수소, 메탄, 에탄 및 기타 탄화수소 기체중에서 선택되는 방법.
  5. 제4항에 있어서, 수소함유 기체가 수소 및 탄화수소 기체의 혼합물 또는 수소 및 아르곤의 혼합물 또는 수소, 아르곤 및 탄화수소 기체의 혼합물인 방법.
  6. 제1항에 있어서, 기질이 스테인레스스틸, 몰리브덴, 유리, 석영, 실리콘 및 알루미늄중에서 선택되는 방법.
  7. 제1항에 있어서, 기질의 온도가 약 600 내지 1000℃로 유지시키는 방법.
  8. 제1항에 있어서, 수소 함유 기체의 분압이 약 2×10-4내지 20×10-3torr인 방법.
  9. 제8항에 있어서, 수소 함유 기체가 수소인 방법.
  10. 제1항에 있어서, 언급된 영역으로 편향되는 전자가 가열된 필라멘트에 의해 생성되는 방법.
  11. 제10항에 있어서, 필라멘트가 텅스텐, 탄탈룸, 몰리브덴 또는 탄소인 방법.
  12. 제1항에 있어서, 전자가 양극쪽으로 향하도록 촉진함으로써 전자를 언급된 영역으로 편향시키는 방법.
  13. 제10항에 있어서, 필라멘트에 의해 생성된 전자가 언급된 영역을 통해 양극쪽으로 향하도록 촉진되는 방법.
  14. 제13항에 있어서, 양극의 전위가 약 80 volt인 방법.
  15. 제1항에 있어서, 필름이 알루미늄, 리튬 또는 붕소와 같은 p 및 n형 도우프제(dopant)로 도우프된 방법.
  16. 제1항에 있어서, 다이아몬드 큐빅 질화붕소를 함유하는 필름이 침착되는 방법.
  17. 제15항에 있어서, 붕소 함유 기체를 언급된 영역으로 도입시켜 붕소 도우프된 다이아몬드를 함유하는 필름을 제공하는 방법.
  18. 제15항에 있어서, 트리메틸 알루미늄과 같은 금속 유기 화합물 증기를 언급된 영역으로 도입시켜 알루미늄 도우프된 다이아몬드를 함유하는 필름을 제공하는 방법.
  19. 제1항에 있어서, 수소 함유 기체가 CH4, 질소 및 수소를 함유하며 붕산/산화붕소를 탄소와 함께 공-증발 시킴으로서 큐빅 질화붕소 도우프된 다이아몬드를 함유하는 필름을 형성시키는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880010481A 1987-08-19 1988-08-18 다이아몬드, 도우프된 다이아몬드, 다이아몬드-큐빅 질화붕소 복합필름의 제조 방법 KR890003982A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US087,141 1987-08-19
US07/087,141 US4816291A (en) 1987-08-19 1987-08-19 Process for making diamond, doped diamond, diamond-cubic boron nitride composite films

Publications (1)

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KR890003982A true KR890003982A (ko) 1989-04-19

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US (1) US4816291A (ko)
EP (1) EP0304201A1 (ko)
JP (1) JPS6472993A (ko)
KR (1) KR890003982A (ko)
BR (1) BR8804197A (ko)
CA (1) CA1329791C (ko)
IL (1) IL87406A0 (ko)
ZA (1) ZA885917B (ko)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030064942A (ko) * 2002-01-29 2003-08-06 오승준 스크래치 방지막을 가지는 조리 기구 및 그 제조방법
US8852406B2 (en) 2012-05-03 2014-10-07 Korea Institute Of Science And Technology Method for synthesis of cubic boron nitride

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JPS6472993A (en) 1989-03-17
IL87406A0 (en) 1989-01-31
CA1329791C (en) 1994-05-24
US4816291A (en) 1989-03-28
EP0304201A1 (en) 1989-02-22
ZA885917B (en) 1989-04-26
BR8804197A (pt) 1989-03-14

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