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KR880700419A - 집적회로 - Google Patents

집적회로

Info

Publication number
KR880700419A
KR880700419A KR1019860700691A KR860700691A KR880700419A KR 880700419 A KR880700419 A KR 880700419A KR 1019860700691 A KR1019860700691 A KR 1019860700691A KR 860700691 A KR860700691 A KR 860700691A KR 880700419 A KR880700419 A KR 880700419A
Authority
KR
South Korea
Prior art keywords
integrated circuit
integrated
circuit
Prior art date
Application number
KR1019860700691A
Other languages
English (en)
Other versions
KR970009098B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR880700419A publication Critical patent/KR880700419A/ko
Application granted granted Critical
Publication of KR970009098B1 publication Critical patent/KR970009098B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/62—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using bucking or boosting dc sources
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0016—Control circuits providing compensation of output voltage deviations using feedforward of disturbance parameters
    • H02M1/0022—Control circuits providing compensation of output voltage deviations using feedforward of disturbance parameters the disturbance parameters being input voltage fluctuations

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
KR1019860700691A 1985-02-08 1986-01-27 집적 회로 KR970009098B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/699,794 US4583157A (en) 1985-02-08 1985-02-08 Integrated circuit having a variably boosted node
US699,794 1985-02-08
PCT/US1986/000160 WO1986004724A1 (en) 1985-02-08 1986-01-27 Integrated circuit having a variably boosted node

Publications (2)

Publication Number Publication Date
KR880700419A true KR880700419A (ko) 1988-03-15
KR970009098B1 KR970009098B1 (ko) 1997-06-05

Family

ID=24810939

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860700691A KR970009098B1 (ko) 1985-02-08 1986-01-27 집적 회로

Country Status (7)

Country Link
US (1) US4583157A (ko)
EP (1) EP0211866B1 (ko)
JP (1) JP2543864B2 (ko)
KR (1) KR970009098B1 (ko)
CA (1) CA1230389A (ko)
DE (1) DE3679611D1 (ko)
WO (1) WO1986004724A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100723488B1 (ko) * 2005-06-16 2007-05-31 삼성전자주식회사 플래쉬 메모리 장치의 프로그램 동작을 위한 고전압 발생회로 및 고전압 발생 방법

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US4752699A (en) * 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
US5185721A (en) * 1988-10-31 1993-02-09 Texas Instruments Incorporated Charge-retaining signal boosting circuit and method
US4954731A (en) * 1989-04-26 1990-09-04 International Business Machines Corporation Wordline voltage boosting circuits for complementary MOSFET dynamic memories
US5751643A (en) * 1990-04-06 1998-05-12 Mosaid Technologies Incorporated Dynamic memory word line driver
GB9007790D0 (en) * 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
GB9007791D0 (en) 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
US5267201A (en) * 1990-04-06 1993-11-30 Mosaid, Inc. High voltage boosted word line supply charge pump regulator for DRAM
US5214602A (en) * 1990-04-06 1993-05-25 Mosaid Inc. Dynamic memory word line driver scheme
US5289025A (en) * 1991-10-24 1994-02-22 At&T Bell Laboratories Integrated circuit having a boosted node
EP0615668A4 (en) * 1991-10-30 1995-03-01 Xilinx Inc REGULATOR FOR PUMPED VOLTAGE GENERATOR.
EP0552404A1 (de) * 1992-07-23 1993-07-28 Siemens Aktiengesellschaft Schaltungsanordnung zur Begrenzung der Ausgangsspannung einer Spannungserhöhungsschaltung
DE69226021T2 (de) * 1992-09-23 1998-10-22 St Microelectronics Srl Treiberschaltung für einen elektronischen Schalter
JP2768172B2 (ja) * 1992-09-30 1998-06-25 日本電気株式会社 半導体メモリ装置
US5493249A (en) * 1993-12-06 1996-02-20 Micron Technology, Inc. System powered with inter-coupled charge pumps
US5642073A (en) * 1993-12-06 1997-06-24 Micron Technology, Inc. System powered with inter-coupled charge pumps
EP0743755A1 (de) * 1995-05-04 1996-11-20 Siemens Aktiengesellschaft Integrierte Schaltung
US5753841A (en) * 1995-08-17 1998-05-19 Advanced Micro Devices, Inc. PC audio system with wavetable cache
JP3601901B2 (ja) * 1996-03-26 2004-12-15 株式会社 沖マイクロデザイン 昇圧回路
FR2750227B1 (fr) * 1996-06-19 1998-09-04 Inside Technologies Dispositif pour stabiliser la tension d'alimentation d'un microcircuit
US5874849A (en) * 1996-07-19 1999-02-23 Texas Instruments Incorporated Low voltage, high current pump for flash memory
EP0836129A1 (en) * 1996-10-09 1998-04-15 Motorola Semiconducteurs S.A. Voltage multiplier
US5905404A (en) * 1997-03-04 1999-05-18 Lucent Technologies Inc. Bootstrap clock generator
FR2761214B1 (fr) * 1997-03-19 1999-05-21 Sgs Thomson Microelectronics Circuit elevateur de tension du type pompe de charge a nombre d'etages controle
US6271715B1 (en) * 1998-02-27 2001-08-07 Maxim Integrated Products, Inc. Boosting circuit with supply-dependent gain
JP3346273B2 (ja) * 1998-04-24 2002-11-18 日本電気株式会社 ブースト回路および半導体記憶装置
JP4431278B2 (ja) * 1998-05-20 2010-03-10 エヌエックスピー ビー ヴィ 電圧増倍器のカスケード接続
JP2001273784A (ja) * 2000-03-29 2001-10-05 Mitsubishi Electric Corp 昇圧回路および半導体記憶装置
US6424570B1 (en) * 2001-06-26 2002-07-23 Advanced Micro Devices, Inc. Modulated charge pump with uses an analog to digital converter to compensate for supply voltage variations
US6734718B1 (en) * 2002-12-23 2004-05-11 Sandisk Corporation High voltage ripple reduction
DE102005012662B4 (de) * 2005-03-18 2015-02-12 Austriamicrosystems Ag Anordnung mit Spannungskonverter zur Spannungsversorgung einer elektrischen Last und Verfahren zur Spannungsversorgung einer elektrischen Last
US8044705B2 (en) * 2007-08-28 2011-10-25 Sandisk Technologies Inc. Bottom plate regulation of charge pumps
US7586362B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Low voltage charge pump with regulation
US7586363B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Diode connected regulation of charge pumps
US20090302930A1 (en) * 2008-06-09 2009-12-10 Feng Pan Charge Pump with Vt Cancellation Through Parallel Structure
US7969235B2 (en) 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US8710907B2 (en) * 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US7683700B2 (en) * 2008-06-25 2010-03-23 Sandisk Corporation Techniques of ripple reduction for charge pumps
US7795952B2 (en) * 2008-12-17 2010-09-14 Sandisk Corporation Regulation of recovery rates in charge pumps
US7973592B2 (en) * 2009-07-21 2011-07-05 Sandisk Corporation Charge pump with current based regulation
US8339183B2 (en) * 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US20110133820A1 (en) * 2009-12-09 2011-06-09 Feng Pan Multi-Stage Charge Pump with Variable Number of Boosting Stages
US20110148509A1 (en) * 2009-12-17 2011-06-23 Feng Pan Techniques to Reduce Charge Pump Overshoot
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
US10199092B2 (en) * 2016-06-21 2019-02-05 Arm Limited Boost circuit for memory
US10211724B1 (en) * 2017-12-20 2019-02-19 Micron Technology, Inc. Electronic device with an output voltage booster mechanism
US10348192B1 (en) 2017-12-20 2019-07-09 Micron Technology, Inc. Electronic device with a charge recycling mechanism

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US3656052A (en) 1971-01-04 1972-04-11 Honeywell Inf Systems Apparatus for providing regulated voltage during brief power interruptions
GB1586782A (en) * 1977-04-29 1981-03-25 Emi Ltd Electrical power supplies
US4199806A (en) * 1978-01-18 1980-04-22 Harris Corporation CMOS Voltage multiplier
US4250414A (en) * 1978-07-31 1981-02-10 Bell Telephone Laboratories, Incorporated Voltage generator circuitry
JPS5662066A (en) * 1979-10-25 1981-05-27 Nec Corp Boosting circuit
JPS566670A (en) * 1980-04-21 1981-01-23 Oki Electric Ind Co Ltd Voltage converting method
JPS56153836A (en) * 1980-04-28 1981-11-28 Toshiba Corp Semiconductor circuit
US4346310A (en) * 1980-05-09 1982-08-24 Motorola, Inc. Voltage booster circuit
US4344003A (en) * 1980-08-04 1982-08-10 Rca Corporation Low power voltage multiplier circuit
US4499387A (en) * 1981-12-15 1985-02-12 Tokyo Shibaura Denki Kabushiki Kaisha Integrated circuit formed on a semiconductor substrate with a variable capacitor circuit
JPS58185091A (ja) * 1982-04-24 1983-10-28 Toshiba Corp 昇圧電圧出力回路および昇圧電圧出力回路を備えたアドレスデコ−ド回路
JPS5968891A (ja) * 1982-10-12 1984-04-18 Toshiba Corp 半導体メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100723488B1 (ko) * 2005-06-16 2007-05-31 삼성전자주식회사 플래쉬 메모리 장치의 프로그램 동작을 위한 고전압 발생회로 및 고전압 발생 방법

Also Published As

Publication number Publication date
CA1230389A (en) 1987-12-15
KR970009098B1 (ko) 1997-06-05
JP2543864B2 (ja) 1996-10-16
JPS62501739A (ja) 1987-07-09
DE3679611D1 (de) 1991-07-11
WO1986004724A1 (en) 1986-08-14
US4583157A (en) 1986-04-15
EP0211866A1 (en) 1987-03-04
EP0211866B1 (en) 1991-06-05

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Legal Events

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