KR20230131232A - Compounds, compositions containing them, molded products, dyes, optical layers, and laminates - Google Patents
Compounds, compositions containing them, molded products, dyes, optical layers, and laminates Download PDFInfo
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- KR20230131232A KR20230131232A KR1020237026424A KR20237026424A KR20230131232A KR 20230131232 A KR20230131232 A KR 20230131232A KR 1020237026424 A KR1020237026424 A KR 1020237026424A KR 20237026424 A KR20237026424 A KR 20237026424A KR 20230131232 A KR20230131232 A KR 20230131232A
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- anion
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 380
- 239000000203 mixture Substances 0.000 title claims abstract description 61
- 230000003287 optical effect Effects 0.000 title claims abstract description 38
- 239000000975 dye Substances 0.000 title abstract description 7
- 150000001450 anions Chemical class 0.000 claims abstract description 65
- 150000001768 cations Chemical class 0.000 claims abstract description 55
- -1 sulfonate anion Chemical class 0.000 claims description 175
- 125000004432 carbon atom Chemical group C* 0.000 claims description 100
- 229920005989 resin Polymers 0.000 claims description 75
- 239000011347 resin Substances 0.000 claims description 75
- 125000001424 substituent group Chemical group 0.000 claims description 45
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 229910052731 fluorine Inorganic materials 0.000 claims description 22
- 125000001153 fluoro group Chemical group F* 0.000 claims description 22
- 239000000178 monomer Substances 0.000 claims description 22
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 10
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 10
- 229910052717 sulfur Inorganic materials 0.000 claims description 10
- 125000004434 sulfur atom Chemical group 0.000 claims description 10
- 125000000168 pyrrolyl group Chemical group 0.000 claims description 9
- 125000000623 heterocyclic group Chemical group 0.000 claims description 7
- 125000004407 fluoroaryl group Chemical group 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 6
- 150000002891 organic anions Chemical class 0.000 claims description 6
- URSLCTBXQMKCFE-UHFFFAOYSA-N dihydrogenborate Chemical compound OB(O)[O-] URSLCTBXQMKCFE-UHFFFAOYSA-N 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- HYGWNUKOUCZBND-UHFFFAOYSA-N azanide Chemical compound [NH2-] HYGWNUKOUCZBND-UHFFFAOYSA-N 0.000 claims description 3
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 239000002904 solvent Substances 0.000 description 54
- 239000011342 resin composition Substances 0.000 description 47
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 45
- 238000002835 absorbance Methods 0.000 description 44
- 239000010408 film Substances 0.000 description 44
- 239000010410 layer Substances 0.000 description 35
- 238000010521 absorption reaction Methods 0.000 description 34
- 230000014759 maintenance of location Effects 0.000 description 33
- 239000000460 chlorine Substances 0.000 description 31
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 21
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 18
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 18
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 238000011156 evaluation Methods 0.000 description 18
- 239000002585 base Substances 0.000 description 16
- 230000008033 biological extinction Effects 0.000 description 16
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 15
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 15
- 239000003054 catalyst Substances 0.000 description 15
- 239000004925 Acrylic resin Substances 0.000 description 14
- 229920000178 Acrylic resin Polymers 0.000 description 14
- 239000012790 adhesive layer Substances 0.000 description 13
- 239000003999 initiator Substances 0.000 description 13
- 238000005160 1H NMR spectroscopy Methods 0.000 description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 12
- 125000000217 alkyl group Chemical group 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 12
- 239000003431 cross linking reagent Substances 0.000 description 12
- 150000002430 hydrocarbons Chemical group 0.000 description 12
- 150000003254 radicals Chemical class 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 125000003545 alkoxy group Chemical group 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 9
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 9
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 9
- 125000003277 amino group Chemical group 0.000 description 9
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 239000000049 pigment Substances 0.000 description 9
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 238000004895 liquid chromatography mass spectrometry Methods 0.000 description 8
- 239000012299 nitrogen atmosphere Substances 0.000 description 8
- WJKHJLXJJJATHN-UHFFFAOYSA-N triflic anhydride Chemical compound FC(F)(F)S(=O)(=O)OS(=O)(=O)C(F)(F)F WJKHJLXJJJATHN-UHFFFAOYSA-N 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 7
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 239000003973 paint Substances 0.000 description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 6
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 6
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 6
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 6
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 125000001028 difluoromethyl group Chemical group [H]C(F)(F)* 0.000 description 6
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 6
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 150000002825 nitriles Chemical class 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- 125000001931 aliphatic group Chemical group 0.000 description 5
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 5
- 125000006267 biphenyl group Chemical group 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000003505 polymerization initiator Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- RKMGAJGJIURJSJ-UHFFFAOYSA-N 2,2,6,6-tetramethylpiperidine Chemical compound CC1(C)CCCC(C)(C)N1 RKMGAJGJIURJSJ-UHFFFAOYSA-N 0.000 description 4
- 125000004791 2-fluoroethoxy group Chemical group FCCO* 0.000 description 4
- LWNFFISCITYFKK-UHFFFAOYSA-N 7-hydroxy-4,4a,5,6-tetrahydro-3h-naphthalen-2-one Chemical compound O=C1CCC2CCC(O)=CC2=C1 LWNFFISCITYFKK-UHFFFAOYSA-N 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 4
- 239000005695 Ammonium acetate Substances 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 4
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 4
- 150000007960 acetonitrile Chemical class 0.000 description 4
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 4
- 125000002252 acyl group Chemical group 0.000 description 4
- 125000003172 aldehyde group Chemical group 0.000 description 4
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 4
- 125000005138 alkoxysulfonyl group Chemical group 0.000 description 4
- 125000004685 alkoxythiocarbonyl group Chemical group 0.000 description 4
- 125000005196 alkyl carbonyloxy group Chemical group 0.000 description 4
- 125000004390 alkyl sulfonyl group Chemical group 0.000 description 4
- 125000004414 alkyl thio group Chemical group 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 235000019257 ammonium acetate Nutrition 0.000 description 4
- 229940043376 ammonium acetate Drugs 0.000 description 4
- 125000004391 aryl sulfonyl group Chemical group 0.000 description 4
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 4
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 4
- 125000004744 butyloxycarbonyl group Chemical group 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 150000001925 cycloalkenes Chemical class 0.000 description 4
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 4
- 125000004786 difluoromethoxy group Chemical group [H]C(F)(F)O* 0.000 description 4
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 4
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 4
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 description 4
- 125000004672 ethylcarbonyl group Chemical group [H]C([H])([H])C([H])([H])C(*)=O 0.000 description 4
- 125000006125 ethylsulfonyl group Chemical group 0.000 description 4
- 125000004705 ethylthio group Chemical group C(C)S* 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 229910052740 iodine Inorganic materials 0.000 description 4
- 239000012948 isocyanate Substances 0.000 description 4
- 150000002513 isocyanates Chemical class 0.000 description 4
- ZCSHNCUQKCANBX-UHFFFAOYSA-N lithium diisopropylamide Chemical compound [Li+].CC(C)[N-]C(C)C ZCSHNCUQKCANBX-UHFFFAOYSA-N 0.000 description 4
- ANYSGBYRTLOUPO-UHFFFAOYSA-N lithium tetramethylpiperidide Chemical compound [Li]N1C(C)(C)CCCC1(C)C ANYSGBYRTLOUPO-UHFFFAOYSA-N 0.000 description 4
- IUYHWZFSGMZEOG-UHFFFAOYSA-M magnesium;propane;chloride Chemical compound [Mg+2].[Cl-].C[CH-]C IUYHWZFSGMZEOG-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 description 4
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 4
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 4
- 125000004170 methylsulfonyl group Chemical group [H]C([H])([H])S(*)(=O)=O 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 4
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 125000004742 propyloxycarbonyl group Chemical group 0.000 description 4
- 239000007870 radical polymerization initiator Substances 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 125000006337 tetrafluoro ethyl group Chemical group 0.000 description 4
- 239000004753 textile Substances 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N trifluoromethane acid Natural products FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- 125000000876 trifluoromethoxy group Chemical group FC(F)(F)O* 0.000 description 4
- LWNGJAHMBMVCJR-UHFFFAOYSA-N (2,3,4,5,6-pentafluorophenoxy)boronic acid Chemical compound OB(O)OC1=C(F)C(F)=C(F)C(F)=C1F LWNGJAHMBMVCJR-UHFFFAOYSA-N 0.000 description 3
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 3
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 description 3
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 3
- ZPQOPVIELGIULI-UHFFFAOYSA-N 1,3-dichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1 ZPQOPVIELGIULI-UHFFFAOYSA-N 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 3
- MKDCJAPHKZPKOU-UHFFFAOYSA-N 1-nitro-2,3-dihydroindole Chemical compound C1=CC=C2N([N+](=O)[O-])CCC2=C1 MKDCJAPHKZPKOU-UHFFFAOYSA-N 0.000 description 3
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 3
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 description 3
- OVRKATYHWPCGPZ-UHFFFAOYSA-N 4-methyloxane Chemical compound CC1CCOCC1 OVRKATYHWPCGPZ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 3
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
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- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
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- LVKCSZQWLOVUGB-UHFFFAOYSA-M magnesium;propane;bromide Chemical compound [Mg+2].[Br-].C[CH-]C LVKCSZQWLOVUGB-UHFFFAOYSA-M 0.000 description 2
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- IZDROVVXIHRYMH-UHFFFAOYSA-N methanesulfonic anhydride Chemical compound CS(=O)(=O)OS(C)(=O)=O IZDROVVXIHRYMH-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- OIRDBPQYVWXNSJ-UHFFFAOYSA-N methyl trifluoromethansulfonate Chemical compound COS(=O)(=O)C(F)(F)F OIRDBPQYVWXNSJ-UHFFFAOYSA-N 0.000 description 2
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 2
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- 125000006574 non-aromatic ring group Chemical group 0.000 description 2
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- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 2
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
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- 235000011056 potassium acetate Nutrition 0.000 description 2
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- RPDAUEIUDPHABB-UHFFFAOYSA-N potassium ethoxide Chemical compound [K+].CC[O-] RPDAUEIUDPHABB-UHFFFAOYSA-N 0.000 description 2
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 2
- 229910000105 potassium hydride Inorganic materials 0.000 description 2
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 2
- BDAWXSQJJCIFIK-UHFFFAOYSA-N potassium methoxide Chemical compound [K+].[O-]C BDAWXSQJJCIFIK-UHFFFAOYSA-N 0.000 description 2
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 2
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 2
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- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
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- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 description 2
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- WBQTXTBONIWRGK-UHFFFAOYSA-N sodium;propan-2-olate Chemical compound [Na+].CC(C)[O-] WBQTXTBONIWRGK-UHFFFAOYSA-N 0.000 description 2
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- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- GRGCWBWNLSTIEN-UHFFFAOYSA-N trifluoromethanesulfonyl chloride Chemical compound FC(F)(F)S(Cl)(=O)=O GRGCWBWNLSTIEN-UHFFFAOYSA-N 0.000 description 2
- RKBCYCFRFCNLTO-UHFFFAOYSA-N triisopropylamine Chemical compound CC(C)N(C(C)C)C(C)C RKBCYCFRFCNLTO-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/62—Quaternary ammonium compounds
- C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/49—Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C255/58—Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing cyano groups and singly-bound nitrogen atoms, not being further bound to other hetero atoms, bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/02—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom condensed with one carbocyclic ring
- C07D209/04—Indoles; Hydrogenated indoles
- C07D209/08—Indoles; Hydrogenated indoles with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, directly attached to carbon atoms of the hetero ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/02—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom condensed with one carbocyclic ring
- C07D209/04—Indoles; Hydrogenated indoles
- C07D209/10—Indoles; Hydrogenated indoles with substituted hydrocarbon radicals attached to carbon atoms of the hetero ring
- C07D209/12—Radicals substituted by oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D403/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00
- C07D403/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings
- C07D403/10—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings linked by a carbon chain containing aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
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Abstract
본 발명은 가시광 영역의 빛을 효율적으로 흡수하고, 동시에 양호한 내후성을 갖는 신규 화합물을 제공하는 것을 목적으로 하여, 식 (I-A)로 표시되는 양이온 및 식 (I-B)로 표시되는 양이온에서 선택되는 적어도 하나의 양이온과 음이온을 포함하는 화합물과, 이를 포함하는 조성물, 성형체, 염색물, 광학층 및 적층체를 제공한다.The present invention aims to provide a novel compound that efficiently absorbs light in the visible region and at the same time has good weather resistance, comprising at least one cation selected from the cation represented by formula (I-A) and the cation represented by formula (I-B). Provided are compounds containing cations and anions, compositions containing the same, molded products, dyes, optical layers, and laminates.
Description
본 발명은 화합물과, 이를 포함하는 조성물, 성형체, 염색물, 광학층 및 적층체에 관한 것이다.The present invention relates to compounds, compositions containing the same, molded products, dyes, optical layers, and laminates.
가시광의 빛을 흡수하는 색소 화합물은 물체의 착색이나 특정 파장의 빛의 투과 또는 흡수 등의 목적으로 섬유, 잉크, 도료, 용기, 포장재, 인쇄물, 광학 물품, 안경, 표시장치 등의 폭넓은 용도로 사용되고 있다. 색소 화합물의 중요한 특성으로서 선택 흡수성(흡수 스펙트럼의 샤프니스) 및 내구성(특히 내후성)을 들 수 있다. 색소 화합물 중에서도 시아닌 색소는 폴리메틴 골격 중 메틴 탄소수를 컨트롤함으로써 파장 380 nm 이하의 자외선 영역에서 파장 780 nm 이상의 근적외선 영역까지 폭넓게 극대 흡수를 나타내는 파장을 컨트롤할 수 있는 점, 또한 시아닌 색소의 대다수는 비교적 높은 선택 흡수성을 나타내는 점에서 널리 사용되어 왔다(예컨대 미국특허 제6004536호).Pigment compounds that absorb visible light are widely used in textiles, inks, paints, containers, packaging materials, printed materials, optical products, glasses, and display devices for the purpose of coloring objects or transmitting or absorbing light of a specific wavelength. It is being used. Important properties of colorant compounds include selective absorption (sharpness of the absorption spectrum) and durability (especially weather resistance). Among pigment compounds, cyanine pigments can control the wavelength showing maximum absorption over a wide range from the ultraviolet region with a wavelength of 380 nm or less to the near-infrared region with a wavelength of 780 nm or more by controlling the number of methine carbons in the polymethine skeleton. In addition, the majority of cyanine pigments are relatively It has been widely used because it exhibits high selective absorption (e.g., U.S. Patent No. 6004536).
그런데 시아닌 색소는 높은 선택 흡수성을 갖기는 하나 내구성(그 중에서도 내후성)이 떨어지는 것이 많아 양호한 내구성을 갖는 화합물이 요구되고 있다.However, although cyanine pigments have high selective absorption, they are often poor in durability (especially weather resistance), so compounds with good durability are required.
본 발명은 이하의 발명을 포함한다.The present invention includes the following inventions.
[1] 식 (I-A)로 표시되는 양이온 및 식 (I-B)로 표시되는 양이온에서 선택되는 적어도 하나의 양이온과 음이온을 포함하는 화합물.[1] A compound containing at least one cation and an anion selected from the cation represented by formula (I-A) and the cation represented by formula (I-B).
[화학식 1][Formula 1]
[식 (I-A) 및 (I-B) 중,[In formulas (I-A) and (I-B),
고리 W1 및 고리 W2는 각각 독립적으로 적어도 하나의 이중 결합을 고리의 구성 요소로 갖는 고리 구조를 나타낸다.Ring W 1 and Ring W 2 each independently represent a ring structure having at least one double bond as a ring component.
고리 W1 및 고리 W2는 각각 독립적으로 치환기를 가질 수 있다.Ring W 1 and ring W 2 may each independently have a substituent.
고리 W3 및 고리 W4는 각각 독립적으로 치환기를 가질 수 있는 함질소 복소환기를 나타낸다. 단, 고리 W3 및 고리 W4는 피롤 고리 구조 및 황 원자를 포함하지 않는다.Ring W 3 and Ring W 4 each independently represent a nitrogen-containing heterocyclic group that may have a substituent. However, ring W 3 and ring W 4 do not contain a pyrrole ring structure and a sulfur atom.
Ar1 및 Ar2는 각각 독립적으로 방향족 기를 나타낸다.Ar 1 and Ar 2 each independently represent an aromatic group.
R1 및 R2는 각각 독립적으로 수소 원자 또는 1가의 치환기를 나타낸다.]R 1 and R 2 each independently represent a hydrogen atom or a monovalent substituent.]
[2] [1]에 있어서, 상기 음이온이 유기 음이온인 화합물.[2] The compound according to [1], wherein the anion is an organic anion.
[3] [2]에 있어서, 상기 음이온이 메티드 음이온, 아미드 음이온, 설포네이트 음이온 또는 보레이트 음이온인 화합물.[3] The compound according to [2], wherein the anion is a methide anion, an amide anion, a sulfonate anion, or a borate anion.
[4] [2] 또는 [3]에 있어서, 상기 음이온이 식 (c-A)로 표시되는 음이온, 식 (c-B)로 표시되는 음이온, 식 (c-C)로 표시되는 음이온 및 식 (c-D)로 표시되는 음이온 중 어느 하나인 화합물.[4] [2] or [3], wherein the anion is an anion represented by the formula (c-A), an anion represented by the formula (c-B), an anion represented by the formula (c-C), and an anion represented by the formula (c-D). A compound that is one of the anions.
[화학식 2][Formula 2]
[식 (c-A) 중, R1c, R2c 및 R3c는 각각 독립적으로 1가의 치환기를 나타낸다.[In formula (cA), R 1c , R 2c and R 3c each independently represent a monovalent substituent.
식 (c-B) 중, R4c 및 R5c는 각각 독립적으로 1가의 치환기를 나타낸다.In formula (cB), R 4c and R 5c each independently represent a monovalent substituent.
식 (c-C) 중, R6c는 1가의 치환기를 나타낸다.In formula (cC), R 6c represents a monovalent substituent.
식 (c-D) 중, R7c, R8c, R9c 및 R10c는 각각 독립적으로 1가의 치환기를 나타낸다.]In formula (cD), R 7c , R 8c , R 9c and R 10c each independently represent a monovalent substituent.]
[5] [4]에 있어서, R1c, R2c, R3c, R4c, R5c, R6c, R7c, R8c, R9c 및 R10c는 각각 독립적으로 불소 원자, 탄소수 1 내지 12의 플루오로알킬기, 탄소수 6 내지 18의 플루오로아릴기, 시아노기, 니트로기, 및/또는 -SO2-R11c(R11c는 불소 원자를 가질 수 있는 탄소수 1 내지 12의 탄화수소기를 나타낸다.)인 화합물.[5] In [4], R 1c , R 2c , R 3c , R 4c , R 5c , R 6c , R 7c , R 8c , R 9c and R 10c are each independently a fluorine atom, a carbon number of 1 to 12 A fluoroalkyl group, a fluoroaryl group having 6 to 18 carbon atoms, a cyano group, a nitro group, and/or -SO 2 -R 11c (R 11c represents a hydrocarbon group having 1 to 12 carbon atoms that may have a fluorine atom). compound.
[6] [4] 또는 [5]에 있어서, 상기 음이온이 식 (c-A1)로 표시되는 음이온, 식 (c-B1)로 표시되는 음이온, 식 (c-C1)로 표시되는 음이온, 식 (c-D1)로 표시되는 음이온 및 식 (c-D2)로 표시되는 음이온 중 어느 하나인 화합물.[6] [4] or [5], wherein the anion is an anion represented by formula (c-A1), an anion represented by formula (c-B1), an anion represented by formula (c-C1), formula A compound that is either an anion represented by (c-D1) or an anion represented by the formula (c-D2).
[화학식 3][Formula 3]
[식 (c-A1) 중, Rf1, Rf2 및 Rf3은 각각 독립적으로 탄소수 1 내지 12의 플루오로알킬기를 나타낸다.[In formula (c-A1), Rf 1 , Rf 2 and Rf 3 each independently represent a fluoroalkyl group having 1 to 12 carbon atoms.
식 (c-B1) 중, Rf4 및 Rf5는 각각 독립적으로 불소 원자 또는 탄소수 1 내지 12의 플루오로알킬기를 나타낸다.In formula (c-B1), Rf 4 and Rf 5 each independently represent a fluorine atom or a fluoroalkyl group having 1 to 12 carbon atoms.
식 (c-C1) 중, Rf6은 탄소수 1 내지 12의 플루오로알킬기를 나타낸다.In formula (c-C1), Rf 6 represents a fluoroalkyl group having 1 to 12 carbon atoms.
식 (c-D2) 중, R1d, R2d, R3d 및 R4d는 각각 독립적으로 불소 원자 또는 탄소수 1 내지 12의 플루오로알킬기를 나타낸다. n1 내지 n4는 각각 독립적으로 0 내지 5의 정수를 나타낸다.]In formula (c-D2), R 1d , R 2d , R 3d and R 4d each independently represent a fluorine atom or a fluoroalkyl group having 1 to 12 carbon atoms. n1 to n4 each independently represent an integer from 0 to 5.]
[7] [6]에 있어서, 상기 음이온이 테트라키스(펜타플루오로페닐)보레이트 음이온인 화합물.[7] The compound according to [6], wherein the anion is tetrakis(pentafluorophenyl)borate anion.
[8] [1] 내지 [7] 중 어느 하나에 따른 화합물과 수지를 포함하는 조성물.[8] A composition comprising the compound according to any one of [1] to [7] and a resin.
[9] [1] 내지 [7] 중 어느 하나에 따른 화합물과 중합성 모노머를 포함하는 조성물.[9] A composition comprising the compound according to any one of [1] to [7] and a polymerizable monomer.
[10] [8] 또는 [9]에 따른 조성물로부터 성형되는 성형체.[10] A molded body molded from the composition according to [8] or [9].
[11] [1] 내지 [7] 중 어느 하나에 따른 화합물에 의해 염색된 염색물.[11] A dyed material dyed with the compound according to any one of [1] to [7].
[12] [1] 내지 [7] 중 어느 하나에 따른 화합물을 포함하는 광학층.[12] An optical layer containing the compound according to any one of [1] to [7].
[13] [12]에 따른 광학층과 파장 변환층이 적층된 적층체.[13] A laminate in which an optical layer and a wavelength conversion layer according to [12] are laminated.
[14] 하기 식 (M-A)로 표시되는 화합물.[14] A compound represented by the following formula (M-A).
[화학식 4][Formula 4]
[식 (M-A) 중,[In formula (M-A),
고리 W1 및 고리 W2는 각각 독립적으로 적어도 하나의 이중 결합을 고리의 구성 요소로 갖는 고리 구조를 나타낸다.Ring W 1 and Ring W 2 each independently represent a ring structure having at least one double bond as a ring component.
고리 W1 및 고리 W2는 각각 독립적으로 치환기를 가질 수 있다.Ring W 1 and ring W 2 may each independently have a substituent.
고리 W4는 치환기를 가질 수 있는 함질소 복소환기를 나타낸다. 단, 고리 W4는 피롤 고리 구조 및 황 원자를 포함하지 않는다.]Ring W 4 represents a nitrogen-containing heterocyclic group that may have a substituent. However, ring W 4 does not contain a pyrrole ring structure and a sulfur atom.]
본 발명은 가시광 영역(파장 400 nm 내지 파장 750 nm, 바람직하게 파장 450 nm 내지 파장 600 nm)의 빛을 효율적으로 흡수하고, 동시에 양호한 내후성을 갖는 신규 화합물을 제공하는 것을 목적으로 한다.The purpose of the present invention is to provide a novel compound that efficiently absorbs light in the visible light range (wavelength 400 nm to 750 nm, preferably wavelength 450 nm to 600 nm) and at the same time has good weather resistance.
발명의 실시를 위한 최선의 형태Best mode for carrying out the invention
본 발명의 화합물은 식 (I-A)로 표시되는 양이온 및 식 (I-B)로 표시되는 양이온에서 선택되는 적어도 하나의 양이온과 음이온을 포함하는 화합물(이하 화합물(I)이라 하는 경우가 있다.)이다.The compound of the present invention is a compound containing at least one cation and an anion selected from the cation represented by formula (I-A) and the cation represented by formula (I-B) (hereinafter sometimes referred to as compound (I)).
[화학식 5][Formula 5]
[식 (I-A) 및 (I-B) 중,[In formulas (I-A) and (I-B),
고리 W1 및 고리 W2는 각각 독립적으로 적어도 하나의 이중 결합을 고리의 구성 요소로 갖는 고리 구조를 나타낸다.Ring W 1 and Ring W 2 each independently represent a ring structure having at least one double bond as a ring component.
고리 W1 및 고리 W2는 각각 독립적으로 치환기를 가질 수 있다.Ring W 1 and ring W 2 may each independently have a substituent.
고리 W3 및 고리 W4는 각각 독립적으로 치환기를 가질 수 있는 함질소 복소환기를 나타낸다. 단, 고리 W3 및 고리 W4는 피롤 고리 구조 및 황 원자를 포함하지 않는다.Ring W 3 and Ring W 4 each independently represent a nitrogen-containing heterocyclic group that may have a substituent. However, ring W 3 and ring W 4 do not contain a pyrrole ring structure and a sulfur atom.
Ar1 및 Ar2는 각각 독립적으로 방향족 기를 나타낸다.Ar 1 and Ar 2 each independently represent an aromatic group.
R1 및 R2는 각각 독립적으로 수소 원자 또는 1가의 치환기를 나타낸다.]R 1 and R 2 each independently represent a hydrogen atom or a monovalent substituent.]
<양이온><cation>
식 (I-A)로 표시되는 양이온은 하기의 공명 구조를 포함한다.The cation represented by formula (I-A) contains the following resonance structure.
[화학식 6][Formula 6]
또한 식 (I-B)로 표시되는 양이온은 하기의 공명 구조를 포함한다.Additionally, the cation represented by formula (I-B) contains the following resonance structure.
[화학식 7][Formula 7]
고리 W1 및 고리 W2는 각각 독립적으로 고리의 구성 요소로서 적어도 하나의 이중 결합을 갖는 고리 구조를 나타낸다. 고리 W1 및 고리 W2는 고리의 구성 요소로서 이중 결합을 하나 이상 갖지만, 고리 W1 및 고리 W2에 포함되는 이중 결합은 통상적으로 1 내지 4이며, 1 내지 3인 것이 바람직하고, 1 또는 2인 것이 보다 바람직하고, 1개인 것이 더욱 바람직하다.Ring W 1 and Ring W 2 each independently represent a ring structure having at least one double bond as a ring component. Ring W 1 and Ring W 2 have one or more double bonds as ring components, but the double bonds contained in Ring W 1 and Ring W 2 are usually 1 to 4, preferably 1 to 3, and 1 or It is more preferable that it is 2, and it is still more preferable that it is 1.
고리 W1 및 고리 W2는 각각 독립적으로 단환일 수도 있으며, 다환일 수도 있다. 고리 W1 및 고리 W2는 각각 독립적으로 방향환일 수도 있으며, 방향족성을 갖지 않는 고리(지방족환)일 수도 있지만, 방향족성을 갖지 않는 고리인 것이 바람직하다. 방향족성을 갖지 않는 고리라면 보다 선택 흡수성을 높일 수 있다.Ring W 1 and ring W 2 may each independently be monocyclic or polycyclic. Ring W 1 and ring W 2 may each independently be an aromatic ring or a non-aromatic ring (aliphatic ring), but it is preferable that they are a non-aromatic ring. If it is a ring that does not have aromaticity, selective absorption can be further improved.
고리 W1 및 고리 W2는 각각 독립적으로 헤테로 원자(예컨대 질소 원자, 산소 원자, 황 원자 등)를 포함하는 복소환일 수도 있으며, 탄화수소로 이루어진 고리일 수도 있다. 고리 W1 및 고리 W2는 각각 독립적으로 탄화수소로 이루어진 고리인 것이 바람직하다.Ring W 1 and ring W 2 may each independently be a heterocycle containing a hetero atom (eg, a nitrogen atom, an oxygen atom, a sulfur atom, etc.), or may be a ring made of hydrocarbon. It is preferable that ring W 1 and ring W 2 are each independently a hydrocarbon ring.
고리 W1 및 고리 W2는 각각 독립적으로 3원 고리 내지 20원 고리의 고리 구조인 것이 바람직하고, 3원 고리 내지 12원 고리인 것이 보다 바람직하고, 4원 고리 내지 6원 고리인 것이 바람직하다.Ring W 1 and Ring W 2 are each independently preferably a ring structure of a 3-membered ring to a 20-membered ring, more preferably a 3-membered ring to a 12-membered ring, and preferably a 4-membered ring to a 6-membered ring. .
고리 W1 및 고리 W2는 각각 독립적으로 단환인 것이 바람직하다.It is preferable that ring W 1 and ring W 2 are each independently monocyclic.
고리 W1과 고리 W2는 축합환을 형성하고 있다. 고리 W1과 고리 W2로 형성되는 축합환은 지방족 탄화수소의 축합환인 것이 바람직하고, 탄소수 6 내지 40의 지방족 탄화수소의 축합환인 것이 보다 바람직하다.Ring W 1 and ring W 2 form a condensed ring. The condensed ring formed by ring W 1 and ring W 2 is preferably an aliphatic hydrocarbon condensed ring, and more preferably is an aliphatic hydrocarbon condensed ring having 6 to 40 carbon atoms.
고리 W1과 고리 W2로 형성되는 축합환은 예컨대 하기 식 (W1-1)로 표시되는 축합환 내지 식 (W1-18)로 표시되는 축합환 등을 들 수 있다. 하기 식 중의 *는 결합 부위를 나타낸다.The condensed ring formed by ring W 1 and ring W 2 includes, for example, a condensed ring represented by the following formula (W 1 -1) to a condensed ring represented by the formula (W 1 -18). * in the following formula represents a binding site.
[화학식 8][Formula 8]
고리 W1 및 고리 W2는 각각 독립적으로 치환기를 가질 수 있다. 상기 치환기로는 불소 원자, 염소 원자, 브롬 원자, 요오드 원자 등의 할로겐 원자; 메틸기, 에틸기, 프로필기, 노르말부틸기, 이소부틸기, 터셔리부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 2-에틸헥실기, 4-부틸옥틸기, 에테닐기, 프로페닐기, 부테닐기, 펜테닐기, 에티닐기, 프로피닐기, 알릴기, 시클로헥세닐기, 부타디에닐기 등의 탄소수 1 내지 25의 지방족 탄화수소기(바람직하게 탄소수 1 내지 12의 알킬기); 플루오로메틸기, 디플루오로메틸기, 트리플루오로메틸기, 2-플루오로에틸기, 2,2-디플루오로에틸기, 2,2,2-트리플루오로에틸기, 1,1,2,2-테트라플루오로에틸기, 1,1,2,2,2-펜타플루오로에틸기, 노나플루오로부틸기 등의 탄소수 1 내지 25의 할로겐화알킬기; 메톡시기, 에톡시기, 프로폭시기, 이소프로폭시기, 부톡시기, 터셔리부톡시기, 펜틸옥시기, 헥실옥시기, 2-에틸헥실옥시기, 4-부틸옥틸옥시기 등의 탄소수 1 내지 25의 알콕시기; 메틸티오기, 에틸티오기, 프로필티오기, 부틸티오기, 펜틸티오기, 헥실티오기 등의 탄소수 1 내지 12의 알킬티오기; 모노플루오로메톡시기, 디플루오로메톡시기, 트리플루오로메톡시기, 2-플루오로에톡시기, 1,1,2,2,2-펜타플루오로에톡시기, 헥사플루오로이소프로폭시기 등의 탄소수 1 내지 12의 불소화알콕시기; 트리플루오로메탄티오알콕시기 등의 탄소수 1 내지 12의 불소화알콕시기; 아미노기, 메틸아미노기, 에틸아미노기, 디메틸아미노기, 디에틸아미노기, 디페닐아미노기, 피페리디노기, 피롤리디노기, 메틸에틸 등의 1개 또는 2개의 탄소수 1 내지 25의 치환기로 치환될 수 있는 아미노기; 카바모일기, N-메틸카바모일기, N,N-디메틸카바모일기 등의 N-위치가 탄소수 1 내지 6의 알킬기로 치환될 수 있는 카바모일기; 메틸카보닐옥시기, 에틸카보닐옥시기 등의 탄소수 2 내지 12의 알킬카보닐옥시기; 메틸설포닐기, 에틸설포닐기 등의 탄소수 1 내지 12의 알킬설포닐기; 페닐기, 나프틸기, 비페닐기, 안트라세닐기 등의 탄소수 6 내지 25의 방향족 탄화수소기(바람직하게 탄화수소 6 내지 18의 아릴기); 페닐설포닐기 등의 탄소수 6 내지 12의 아릴설포닐기; 메톡시설포닐기, 에톡시설포닐기 등의 탄소수 1 내지 12의 알콕시설포닐기; 트리플루오로메틸설포닐기, 펜타플루오로에틸설포닐기, 트리플루오로에틸설포닐기 등의 탄소수 1 내지 12의 플루오로알킬설포닐기; 아세틸기, 에틸카보닐기 등의 탄소수 2 내지 12의 아실기; 알데히드기; 메톡시카보닐기, 에톡시카보닐기, 프로폭시카보닐기, 부틸옥시카보닐기 등의 탄소수 2 내지 12의 알콕시카보닐기; 메톡시티오카보닐기, 에톡시티오카보닐기 등의 탄소수 2 내지 12의 알콕시티오카보닐기; 시아노기; 니트로기; 수산기; 티올기; 설포기; 카바모일기; 카복실기; -SF3; -SF5 등을 들 수 있다.Ring W 1 and ring W 2 may each independently have a substituent. The substituents include halogen atoms such as fluorine atom, chlorine atom, bromine atom, and iodine atom; Methyl group, ethyl group, propyl group, normal butyl group, isobutyl group, tertiary butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, 2-ethylhexyl group, 4-butyloctyl group, aliphatic hydrocarbon groups having 1 to 25 carbon atoms such as ethenyl group, propenyl group, butenyl group, pentenyl group, ethynyl group, propynyl group, allyl group, cyclohexenyl group, butadienyl group (preferably an alkyl group having 1 to 12 carbon atoms); Fluoromethyl group, difluoromethyl group, trifluoromethyl group, 2-fluoroethyl group, 2,2-difluoroethyl group, 2,2,2-trifluoroethyl group, 1,1,2,2-tetrafluoro Halogenated alkyl groups having 1 to 25 carbon atoms, such as loethyl group, 1,1,2,2,2-pentafluoroethyl group, and nonafluorobutyl group; 1 to 25 carbon atoms such as methoxy group, ethoxy group, propoxy group, isopropoxy group, butoxy group, tertiary butoxy group, pentyloxy group, hexyloxy group, 2-ethylhexyloxy group, 4-butyloctyloxy group, etc. alkoxy group; Alkylthio groups having 1 to 12 carbon atoms, such as methylthio group, ethylthio group, propylthio group, butylthio group, pentylthio group, and hexylthio group; Monofluoromethoxy group, difluoromethoxy group, trifluoromethoxy group, 2-fluoroethoxy group, 1,1,2,2,2-pentafluoroethoxy group, hexafluoroisopropoxy group fluorinated alkoxy groups having 1 to 12 carbon atoms, such as; Fluorinated alkoxy groups having 1 to 12 carbon atoms, such as trifluoromethane thioalkoxy groups; An amino group that may be substituted with one or two substituents having 1 to 25 carbon atoms, such as amino group, methylamino group, ethylamino group, dimethylamino group, diethylamino group, diphenylamino group, piperidino group, pyrrolidino group, and methylethyl; Carbamoyl groups in which the N-position may be substituted with an alkyl group having 1 to 6 carbon atoms, such as carbamoyl group, N-methylcarbamoyl group, and N,N-dimethylcarbamoyl group; Alkylcarbonyloxy groups having 2 to 12 carbon atoms, such as methylcarbonyloxy group and ethylcarbonyloxy group; Alkylsulfonyl groups having 1 to 12 carbon atoms, such as methylsulfonyl group and ethylsulfonyl group; aromatic hydrocarbon groups having 6 to 25 carbon atoms such as phenyl group, naphthyl group, biphenyl group, and anthracenyl group (preferably an aryl group having 6 to 18 hydrocarbons); Arylsulfonyl groups having 6 to 12 carbon atoms, such as phenylsulfonyl group; Alkoxysulfonyl groups having 1 to 12 carbon atoms, such as methoxysulfonyl group and ethoxysulfonyl group; Fluoroalkyl sulfonyl groups having 1 to 12 carbon atoms, such as trifluoromethylsulfonyl group, pentafluoroethylsulfonyl group, and trifluoroethylsulfonyl group; Acyl groups having 2 to 12 carbon atoms, such as acetyl group and ethyl carbonyl group; aldehyde group; Alkoxycarbonyl groups having 2 to 12 carbon atoms, such as methoxycarbonyl group, ethoxycarbonyl group, propoxycarbonyl group, and butyloxycarbonyl group; Alkoxythiocarbonyl groups having 2 to 12 carbon atoms, such as methoxythiocarbonyl group and ethoxythiocarbonyl group; Cyano group; nitro group; hydroxyl group; Thiol group; tongue group; Cavamo Diary; Carboxyl group; -SF 3 ; -SF 5 , etc.
고리 W1과 고리 W2로 형성되는 축합환도 치환기를 가질 수 있고, 상기 치환기는 고리 W1 또는 고리 W2가 가질 수 있는 치환기를 들 수 있다.The condensed ring formed by ring W 1 and ring W 2 may also have a substituent, and the substituent includes substituents that ring W 1 or ring W 2 may have.
고리 W3 및 고리 W4는 각각 독립적으로 함질소 복소환기를 나타낸다. 단, 고리 W3 및 고리 W4는 피롤 고리 구조 및 황 원자를 포함하지 않는다. 또, 피롤 고리 구조 및 황 원자를 포함하지 않는다는 것은 고리 W3 및 고리 W4가 치환기를 갖는 경우에는 치환기 중에도 피롤 고리 구조 및 황 원자를 포함하지 않는다는 것을 말한다.Ring W 3 and ring W 4 each independently represent a nitrogen-containing heterocyclic group. However, ring W 3 and ring W 4 do not contain a pyrrole ring structure and a sulfur atom. In addition, not containing a pyrrole ring structure and a sulfur atom means that when ring W 3 and ring W 4 have a substituent, the substituent does not contain a pyrrole ring structure and a sulfur atom.
고리 W3 및 고리 W4는 피롤 고리 구조 및 황 원자를 포함하지 않는 한 특별히 한정되지 않는다. 고리 W3 및 고리 W4로는 예컨대 피페리딘 고리기, 아지리딘 고리기, 모폴린 고리기, 인돌린 고리기, 이미다졸 고리기, 이미다졸린 고리기, 테트라졸 고리기, 옥사졸린 고리기 등을 들 수 있다.Ring W 3 and ring W 4 are not particularly limited as long as they do not contain a pyrrole ring structure and a sulfur atom. Ring W 3 and ring W 4 include, for example, a piperidine ring group, an aziridine ring group, a morpholine ring group, an indoline ring group, an imidazole ring group, an imidazoline ring group, a tetrazole ring group, and an oxazoline ring group. etc. can be mentioned.
고리 W3 및 고리 W4는 동일한 기인 것이 바람직하다.Ring W 3 and ring W 4 are preferably the same group.
고리 W3 및 고리 W4는 각각 독립적으로 인돌린 고리기, 이미다졸 고리기 또는 이미다졸린 고리기인 것이 바람직하다.It is preferable that ring W 3 and ring W 4 are each independently an indoline ring group, an imidazole ring group, or an imidazoline ring group.
고리 W3 및 고리 W4는 각각 독립적으로 치환기를 가질 수 있다. 상기 치환기로는 상기에서 설명한 고리 W1 및 고리 W2가 가질 수 있는 치환기를 들 수 있다.Ring W 3 and ring W 4 may each independently have a substituent. The substituents include substituents that ring W 1 and ring W 2 described above may have.
Ar1 및 Ar2로 나타나는 방향족 기로는 방향족 탄화수소기, 방향족 복소환기 등을 들 수 있다.The aromatic group represented by Ar 1 and Ar 2 includes an aromatic hydrocarbon group and an aromatic heterocyclic group.
Ar1 및 Ar2로 나타나는 방향족 탄화수소기로는 예컨대 페닐기, 나프틸기, 안트라세닐기, 비페닐기, 터셔리페닐기, 페닐터셔리페닐기 등의 탄소수 6 내지 24의 아릴기; 벤질기, 페닐에틸기, 나프틸메틸기 등의 탄소수 7 내지 24의 아랄킬기 등을 들 수 있다.Examples of the aromatic hydrocarbon group represented by Ar 1 and Ar 2 include aryl groups having 6 to 24 carbon atoms such as phenyl group, naphthyl group, anthracenyl group, biphenyl group, tertiary phenyl group, and phenyl tertiary phenyl group; and aralkyl groups having 7 to 24 carbon atoms, such as benzyl group, phenylethyl group, and naphthylmethyl group.
Ar1 및 Ar2로 나타나는 방향족 복소환기로는 퓨란 고리기, 티오피롤 고리기, 이미다졸 고리기, 피리딘 고리기, 옥사졸 고리기의 탄소수 3 내지 20의 방향족 복소환을 포함하는 기를 들 수 있다.Examples of the aromatic heterocyclic group represented by Ar 1 and Ar 2 include groups containing an aromatic heterocycle having 3 to 20 carbon atoms, such as a furan ring group, a thiopyrrole ring group, an imidazole ring group, a pyridine ring group, and an oxazole ring group. there is.
Ar1 및 Ar2로 나타나는 방향족 기는 치환기를 가질 수 있다. 치환기로는 불소 원자, 염소 원자, 브롬 원자, 요오드 원자 등의 할로겐 원자; 플루오로메틸기, 디플루오로메틸기, 트리플루오로메틸기, 2-플루오로에틸기, 2,2-디플루오로에틸기, 2,2,2-트리플루오로에틸기, 1,1,2,2-테트라플루오로에틸기, 1,1,2,2,2-펜타플루오로에틸기 등의 탄소수 1 내지 12의 할로겐화알킬기; 메톡시기, 에톡시기, 프로폭시기, 부톡시기, 펜틸옥시기, 헥실옥시기 등의 탄소수 1 내지 12의 알콕시기; 메틸티오기, 에틸티오기, 프로필티오기, 부틸티오기, 펜틸티오기, 헥실티오기 등의 탄소수 1 내지 12의 알킬티오기; 모노플루오로메톡시기, 디플루오로메톡시기, 트리플루오로메톡시기, 2-플루오로에톡시기, 1,1,2,2,2-펜타플루오로에톡시기 등의 탄소수 1 내지 12의 불소화알콕시기; 트리플루오로메탄티오알콕시기 등의 탄소수 1 내지 12의 불소화알콕시기; 아미노기, 메틸아미노기, 에틸아미노기, 디메틸아미노기, 디에틸아미노기, 메틸에틸 등의 1개 또는 2개의 탄소수 1 내지 6의 알킬기로 치환될 수 있는 아미노기; 카바모일기, N-메틸카바모일기, N,N-디메틸카바모일기 등의 N-위치가 탄소수 1 내지 6의 알킬기로 치환될 수 있는 카바모일기; 메틸카보닐옥시기, 에틸카보닐옥시기 등의 탄소수 2 내지 12의 알킬카보닐옥시기; 메틸설포닐기, 에틸설포닐기 등의 탄소수 1 내지 12의 알킬설포닐기; 페닐설포닐기 등의 탄소수 6 내지 12의 아릴설포닐기; 메톡시설포닐기, 에톡시설포닐기 등의 탄소수 1 내지 12의 알콕시설포닐기; 아세틸기, 에틸카보닐기 등의 탄소수 2 내지 12의 아실기; 알데히드기; 메톡시카보닐기, 에톡시카보닐기, 프로폭시카보닐기, 부틸옥시카보닐기 등의 탄소수 2 내지 12의 알콕시카보닐기; 메톡시티오카보닐기, 에톡시티오카보닐기 등의 탄소수 2 내지 12의 알콕시티오카보닐기; 시아노기; 니트로기; 수산기; 티올기; 설포기; 카바모일기; 카복실기; -SF3; -SF5 등을 들 수 있다.The aromatic group represented by Ar 1 and Ar 2 may have a substituent. Substituents include halogen atoms such as fluorine atom, chlorine atom, bromine atom, and iodine atom; Fluoromethyl group, difluoromethyl group, trifluoromethyl group, 2-fluoroethyl group, 2,2-difluoroethyl group, 2,2,2-trifluoroethyl group, 1,1,2,2-tetrafluoro Halogenated alkyl groups having 1 to 12 carbon atoms, such as loethyl group and 1,1,2,2,2-pentafluoroethyl group; Alkoxy groups having 1 to 12 carbon atoms such as methoxy group, ethoxy group, propoxy group, butoxy group, pentyloxy group, and hexyloxy group; Alkylthio groups having 1 to 12 carbon atoms, such as methylthio group, ethylthio group, propylthio group, butylthio group, pentylthio group, and hexylthio group; Fluorination of 1 to 12 carbon atoms such as monofluoromethoxy group, difluoromethoxy group, trifluoromethoxy group, 2-fluoroethoxy group, and 1,1,2,2,2-pentafluoroethoxy group. Alkoxy group; Fluorinated alkoxy groups having 1 to 12 carbon atoms, such as trifluoromethane thioalkoxy groups; An amino group that may be substituted with one or two alkyl groups having 1 to 6 carbon atoms, such as amino group, methylamino group, ethylamino group, dimethylamino group, diethylamino group, and methylethyl; Carbamoyl groups in which the N-position may be substituted with an alkyl group having 1 to 6 carbon atoms, such as carbamoyl group, N-methylcarbamoyl group, and N,N-dimethylcarbamoyl group; Alkylcarbonyloxy groups having 2 to 12 carbon atoms, such as methylcarbonyloxy group and ethylcarbonyloxy group; Alkylsulfonyl groups having 1 to 12 carbon atoms, such as methylsulfonyl group and ethylsulfonyl group; Arylsulfonyl groups having 6 to 12 carbon atoms, such as phenylsulfonyl group; Alkoxysulfonyl groups having 1 to 12 carbon atoms, such as methoxysulfonyl group and ethoxysulfonyl group; Acyl groups having 2 to 12 carbon atoms, such as acetyl group and ethyl carbonyl group; aldehyde group; Alkoxycarbonyl groups having 2 to 12 carbon atoms, such as methoxycarbonyl group, ethoxycarbonyl group, propoxycarbonyl group, and butyloxycarbonyl group; Alkoxythiocarbonyl groups having 2 to 12 carbon atoms, such as methoxythiocarbonyl group and ethoxythiocarbonyl group; Cyano group; nitro group; hydroxyl group; Thiol group; tongue group; Cavamo Diary; Carboxyl group; -SF 3 ; -SF 5 , etc.
Ar1과 Ar2는 동일한 기인 것이 바람직하다.Ar 1 and Ar 2 are preferably the same group.
Ar1 및 Ar2는 각각 독립적으로 치환기를 가질 수 있는 방향족 탄화수소기인 것이 바람직하다.Ar 1 and Ar 2 are preferably each independently an aromatic hydrocarbon group that may have a substituent.
R1 및 R2로 나타나는 1가의 치환기로는 불소 원자, 염소 원자, 브롬 원자, 요오드 원자 등의 할로겐 원자; 메톡시기, 에톡시기, 프로폭시기, 부톡시기, 펜틸옥시기, 헥실옥시기 등의 탄소수 1 내지 12의 알콕시기; 메틸티오기, 에틸티오기, 프로필티오기, 부틸티오기, 펜틸티오기, 헥실티오기 등의 탄소수 1 내지 12의 알킬티오기; 모노플루오로메톡시기, 디플루오로메톡시기, 트리플루오로메톡시기, 2-플루오로에톡시기, 1,1,2,2,2-펜타플루오로에톡시기 등의 탄소수 1 내지 12의 불소화알콕시기; 트리플루오로메탄티오알콕시기 등의 탄소수 1 내지 12의 불소화티오알콕시기; 아미노기, 메틸아미노기, 에틸아미노기, 디메틸아미노기, 디에틸아미노기, 메틸에틸 등의 1개 또는 2개의 탄소수 1 내지 6의 알킬기로 치환될 수 있는 아미노기; 카바모일기, N-메틸카바모일기, N,N-디메틸카바모일기 등의 N-위치가 탄소수 1 내지 6의 알킬기로 치환될 수 있는 카바모일기; 메틸카보닐옥시기, 에틸카보닐옥시기 등의 탄소수 2 내지 12의 알킬카보닐옥시기; 메틸설포닐기, 에틸설포닐기 등의 탄소수 1 내지 12의 알킬설포닐기; 페닐설포닐기 등의 탄소수 6 내지 12의 아릴설포닐기; 메톡시설포닐기, 에톡시설포닐기 등의 탄소수 1 내지 12의 알콕시설포닐기; 아세틸기, 에틸카보닐기 등의 탄소수 2 내지 12의 아실기; 알데히드기; 메톡시카보닐기, 에톡시카보닐기, 프로폭시카보닐기, 부틸옥시카보닐기 등의 탄소수 2 내지 12의 알콕시카보닐기; 메톡시티오카보닐기, 에톡시티오카보닐기 등의 탄소수 2 내지 12의 알콕시티오카보닐기; 시아노기; 니트로기; 수산기; 티올기; 설포기; 카바모일기; 카복실기; -SF3; -SF5 등을 들 수 있다.Monovalent substituents represented by R 1 and R 2 include halogen atoms such as fluorine atom, chlorine atom, bromine atom, and iodine atom; Alkoxy groups having 1 to 12 carbon atoms such as methoxy group, ethoxy group, propoxy group, butoxy group, pentyloxy group, and hexyloxy group; Alkylthio groups having 1 to 12 carbon atoms, such as methylthio group, ethylthio group, propylthio group, butylthio group, pentylthio group, and hexylthio group; Fluorination of 1 to 12 carbon atoms such as monofluoromethoxy group, difluoromethoxy group, trifluoromethoxy group, 2-fluoroethoxy group, and 1,1,2,2,2-pentafluoroethoxy group. Alkoxy group; Fluorinated thioalkoxy groups having 1 to 12 carbon atoms, such as trifluoromethane thioalkoxy groups; An amino group that may be substituted with one or two alkyl groups having 1 to 6 carbon atoms, such as amino group, methylamino group, ethylamino group, dimethylamino group, diethylamino group, and methylethyl; Carbamoyl groups in which the N-position may be substituted with an alkyl group having 1 to 6 carbon atoms, such as carbamoyl group, N-methylcarbamoyl group, and N,N-dimethylcarbamoyl group; Alkylcarbonyloxy groups having 2 to 12 carbon atoms, such as methylcarbonyloxy group and ethylcarbonyloxy group; Alkylsulfonyl groups having 1 to 12 carbon atoms, such as methylsulfonyl group and ethylsulfonyl group; Arylsulfonyl groups having 6 to 12 carbon atoms, such as phenylsulfonyl group; Alkoxysulfonyl groups having 1 to 12 carbon atoms, such as methoxysulfonyl group and ethoxysulfonyl group; Acyl groups having 2 to 12 carbon atoms, such as acetyl group and ethyl carbonyl group; aldehyde group; Alkoxycarbonyl groups having 2 to 12 carbon atoms, such as methoxycarbonyl group, ethoxycarbonyl group, propoxycarbonyl group, and butyloxycarbonyl group; Alkoxythiocarbonyl groups having 2 to 12 carbon atoms, such as methoxythiocarbonyl group and ethoxythiocarbonyl group; Cyano group; nitro group; hydroxyl group; Thiol group; tongue group; Cavamo Diary; Carboxyl group; -SF 3 ; -SF 5 , etc.
R1 및 R2로 나타나는 탄화수소기로는 탄소수 1 내지 24의 지방족 탄화수소기, 탄소수 6 내지 24의 방향족 탄화수소기 등을 들 수 있다.Hydrocarbon groups represented by R 1 and R 2 include aliphatic hydrocarbon groups with 1 to 24 carbon atoms, aromatic hydrocarbon groups with 6 to 24 carbon atoms, and the like.
탄소수 1 내지 24의 지방족 탄화수소기로는 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, tert-부틸기, sec-부틸기, n-펜틸기, n-헥실기, 1-메틸부틸기, 3-메틸부틸기, n-옥틸기, n-데실, 2-헥실-옥틸기, 4-부틸옥틸기, 시클로헥실기 등의 직쇄형, 분기쇄형, 고리형의 탄소수 1 내지 24의 알킬기; 에테닐기, 프로페닐기, 부테닐기, 펜테닐기, 에티닐기, 프로피닐기, 알릴기, 시클로헥세닐기, 부타디에닐기 등의 불포화 지방족 탄화수소기 등을 들 수 있다.Aliphatic hydrocarbon groups having 1 to 24 carbon atoms include methyl, ethyl, n-propyl, isopropyl, n-butyl, tert-butyl, sec-butyl, n-pentyl, n-hexyl, and 1-methyl. Straight-chain, branched-chain, or cyclic carbon atoms having 1 to 24 carbon atoms, such as butyl group, 3-methylbutyl group, n-octyl group, n-decyl, 2-hexyl-octyl group, 4-butyloctyl group, and cyclohexyl group. Alkyl group; and unsaturated aliphatic hydrocarbon groups such as ethenyl group, propenyl group, butenyl group, pentenyl group, ethynyl group, propynyl group, allyl group, cyclohexenyl group, and butadienyl group.
탄소수 6 내지 24의 방향족 탄화수소기로는 페닐기, 나프틸기, 안트라세닐기, 비페닐기 등의 탄소수 6 내지 24의 아릴기; 벤질기, 페닐에틸기, 나프틸메틸기 등의 탄소수 7 내지 24의 아랄킬기 등을 들 수 있다.Examples of aromatic hydrocarbon groups having 6 to 24 carbon atoms include aryl groups having 6 to 24 carbon atoms, such as phenyl group, naphthyl group, anthracenyl group, and biphenyl group; and aralkyl groups having 7 to 24 carbon atoms, such as benzyl group, phenylethyl group, and naphthylmethyl group.
R1 및 R2로 나타나는 탄화수소기는 치환기를 가질 수 있고, 예컨대 불소 원자, 염소 원자, 브롬 원자, 요오드 원자 등의 할로겐 원자; 메틸티오기, 에틸티오기, 프로필티오기, 부틸티오기, 펜틸티오기, 헥실티오기 등의 탄소수 1 내지 12의 알킬티오기; 모노플루오로메톡시기, 디플루오로메톡시기, 트리플루오로메톡시기, 2-플루오로에톡시기, 1,1,2,2,2-펜타플루오로에톡시기 등의 탄소수 1 내지 12의 불소화알콕시기; 트리플루오로메탄티오알콕시기 등의 탄소수 1 내지 12의 불소화알콕시기; 아미노기, 메틸아미노기, 에틸아미노기, 디메틸아미노기, 디에틸아미노기, 메틸에틸 등의 1개 또는 2개의 탄소수 1 내지 6의 알킬기로 치환될 수 있는 아미노기; 카바모일기, N-메틸카바모일기, N,N-디메틸카바모일기 등의 N-위치가 탄소수 1 내지 6의 알킬기로 치환될 수 있는 카바모일기; 메틸카보닐옥시기, 에틸카보닐옥시기 등의 탄소수 2 내지 12의 알킬카보닐옥시기; 메틸설포닐기, 에틸설포닐기 등의 탄소수 1 내지 12의 알킬설포닐기; 페닐기, 나프틸기, 디페닐기 등의 탄소수 6 내지 25의 방향족 탄화수소기(바람직하게 탄화수소 6 내지 18의 아릴기); 페닐설포닐기 등의 탄소수 6 내지 12의 아릴설포닐기; 메톡시설포닐기, 에톡시설포닐기 등의 탄소수 1 내지 12의 알콕시설포닐기; 아세틸기, 에틸카보닐기 등의 탄소수 2 내지 12의 아실기; 알데히드기; 메톡시카보닐기, 에톡시카보닐기, 프로폭시카보닐기, 부틸옥시카보닐기 등의 탄소수 2 내지 12의 알콕시카보닐기; 메톡시티오카보닐기, 에톡시티오카보닐기 등의 탄소수 2 내지 12의 알콕시티오카보닐기; 시아노기; 니트로기; 수산기; 티올기; 설포기; 카바모일기; 카복실기; -SF3; -SF5 등을 들 수 있다.The hydrocarbon group represented by R 1 and R 2 may have a substituent, such as a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom; Alkylthio groups having 1 to 12 carbon atoms, such as methylthio group, ethylthio group, propylthio group, butylthio group, pentylthio group, and hexylthio group; Fluorination of 1 to 12 carbon atoms such as monofluoromethoxy group, difluoromethoxy group, trifluoromethoxy group, 2-fluoroethoxy group, and 1,1,2,2,2-pentafluoroethoxy group. Alkoxy group; Fluorinated alkoxy groups having 1 to 12 carbon atoms, such as trifluoromethane thioalkoxy groups; An amino group that may be substituted with one or two alkyl groups having 1 to 6 carbon atoms, such as amino group, methylamino group, ethylamino group, dimethylamino group, diethylamino group, and methylethyl; Carbamoyl groups in which the N-position may be substituted with an alkyl group having 1 to 6 carbon atoms, such as carbamoyl group, N-methylcarbamoyl group, and N,N-dimethylcarbamoyl group; Alkylcarbonyloxy groups having 2 to 12 carbon atoms, such as methylcarbonyloxy group and ethylcarbonyloxy group; Alkylsulfonyl groups having 1 to 12 carbon atoms, such as methylsulfonyl group and ethylsulfonyl group; Aromatic hydrocarbon groups having 6 to 25 carbon atoms, such as phenyl group, naphthyl group, and diphenyl group (preferably aryl groups having 6 to 18 hydrocarbons); Arylsulfonyl groups having 6 to 12 carbon atoms, such as phenylsulfonyl group; Alkoxysulfonyl groups having 1 to 12 carbon atoms, such as methoxysulfonyl group and ethoxysulfonyl group; Acyl groups having 2 to 12 carbon atoms, such as acetyl group and ethyl carbonyl group; aldehyde group; Alkoxycarbonyl groups having 2 to 12 carbon atoms, such as methoxycarbonyl group, ethoxycarbonyl group, propoxycarbonyl group, and butyloxycarbonyl group; Alkoxythiocarbonyl groups having 2 to 12 carbon atoms, such as methoxythiocarbonyl group and ethoxythiocarbonyl group; Cyano group; nitro group; hydroxyl group; Thiol group; tongue group; Cavamo Diary; Carboxyl group; -SF 3 ; -SF 5 , etc.
R1 및 R2는 동일한 기인 것이 바람직하다.R 1 and R 2 are preferably the same group.
R1 및 R2는 수소 원자 또는 탄소수 1 내지 24의 탄화수소기인 것이 바람직하고, 보다 바람직하게 수소 원자 또는 탄소수 1 내지 24의 알킬기이다.R 1 and R 2 are preferably a hydrogen atom or a hydrocarbon group having 1 to 24 carbon atoms, and more preferably a hydrogen atom or an alkyl group having 1 to 24 carbon atoms.
식 (I-A)로 표시되는 양이온은 식 (I-A-1)로 표시되는 양이온인 것이 바람직하고, 식 (I-B)로 표시되는 양이온은 식 (I-B-1)로 표시되는 양이온인 것이 바람직하다.The cation represented by formula (I-A) is preferably a cation represented by formula (I-A-1), and the cation represented by formula (I-B) is preferably a cation represented by formula (I-B-1).
[화학식 9][Formula 9]
[식 (I-A-1) 및 식 (I-B-1) 중, 고리 W3, 고리 W4, Ar1, Ar2, R1 및 R2는 각각 상기와 동일한 의미를 나타낸다.][In formula (IA-1) and formula (IB-1), ring W 3 , ring W 4 , Ar 1 , Ar 2 , R 1 and R 2 each have the same meaning as above.]
식 (I-A)로 표시되는 양이온은 예컨대 이하에 기재된 양이온 등을 들 수 있다.Examples of the cation represented by formula (I-A) include the cations described below.
[화학식 10][Formula 10]
[화학식 11][Formula 11]
[화학식 12][Formula 12]
[화학식 13][Formula 13]
식 (I-A)로 표시되는 양이온은 식 (I-1), 식 (I-2), 식 (I-3), 식 (I-9), 식 (I-13), 식 (I-17), 식 (I-18), 식 (I-19), 식 (I-24), 식 (I-26), 식 (I-27), 식 (I-28), 식 (I-30), 식 (I-32), 식 (I-39) 또는 식 (I-58)로 표시되는 양이온인 것이 바람직하다.The cation represented by formula (I-A) is formula (I-1), formula (I-2), formula (I-3), formula (I-9), formula (I-13), formula (I-17) , Formula (I-18), Formula (I-19), Formula (I-24), Formula (I-26), Formula (I-27), Formula (I-28), Formula (I-30), It is preferable that it is a cation represented by formula (I-32), formula (I-39), or formula (I-58).
식 (I-B)로 표시되는 양이온은 예컨대 이하에 기재된 양이온 등을 들 수 있다.Examples of the cation represented by formula (I-B) include the cations described below.
[화학식 14][Formula 14]
[화학식 15][Formula 15]
[화학식 16][Formula 16]
[화학식 17][Formula 17]
식 (I-B)로 표시되는 양이온은 식 (I-59), 식 (I-60), 식 (I-61), 식 (I-62), 식 (I-67a), 식 (I-67b), 식 (I-68), 식 (I-69), 식 (I-78), 식 (I-79), 식 (I-84), 식 (I-85), 식 (I-89) 또는 식 (I-92)로 표시되는 양이온인 것이 바람직하다.Cations represented by formula (I-B) are formula (I-59), formula (I-60), formula (I-61), formula (I-62), formula (I-67a), formula (I-67b) , Formula (I-68), Formula (I-69), Formula (I-78), Formula (I-79), Formula (I-84), Formula (I-85), Formula (I-89) or It is preferable that it is a cation represented by formula (I-92).
<음이온><Anion>
화합물(I)은 식 (I-A)로 표시되는 양이온 및 식 (I-B)로 표시되는 양이온에서 선택되는 적어도 하나의 양이온과 음이온으로 구성된다. 화합물(I)을 구성하는 식 (I-A)로 표시되는 양이온 및 식 (I-B)로 표시되는 양이온에서 선택되는 적어도 하나의 양이온과 음이온의 조합은 한정되지 않는다. 음이온의 가수가 2 이상인 경우, 식 (I-A)로 표시되는 양이온을 복수 개 가질 수 있으며, 식 (I-B)로 표시되는 양이온을 복수 개 가질 수 있으며, 식 (I-A)로 표시되는 양이온과 식 (I-B)로 표시되는 양이온을 가질 수 있다. 또한 음이온의 가수가 2 이상인 경우, 식 (I-A)로 표시되는 양이온 및 식 (I-B)로 표시되는 양이온 이외의 양이온을 가질 수 있다.Compound (I) consists of at least one cation and an anion selected from the cation represented by formula (I-A) and the cation represented by formula (I-B). The combination of at least one cation and an anion selected from the cation represented by formula (I-A) and the cation represented by formula (I-B) constituting compound (I) is not limited. When the valence of the anion is 2 or more, it may have a plurality of cations represented by the formula (I-A), and may have a plurality of cations represented by the formula (I-B), and the cation represented by the formula (I-A) and the cation represented by the formula (I-B) ) may have a cation represented by . Additionally, when the valence of the anion is 2 or more, it may have cations other than the cation represented by the formula (I-A) and the cation represented by the formula (I-B).
음이온은 유기 음이온일 수도 있으며, 무기 음이온일 수도 있다.The anion may be an organic anion or an inorganic anion.
유기 음이온으로는 예컨대 아세테이트 음이온, 메티드 음이온, 아미드 음이온, 설포네이트 음이온 또는 보레이트 음이온 등을 들 수 있고, 메티드 음이온, 아미드 음이온, 설포네이트 음이온 또는 보레이트 음이온인 것이 바람직하다.Organic anions include, for example, acetate anions, methide anions, amide anions, sulfonate anions, or borate anions, and are preferably methide anions, amide anions, sulfonate anions, or borate anions.
메티드 음이온으로는 식 (c-A)로 표시되는 음이온인 것이 바람직하다.The methide anion is preferably an anion represented by the formula (c-A).
[화학식 18][Formula 18]
[식 (c-A) 중, R1c, R2c 및 R3c는 각각 독립적으로 1가의 치환기를 나타낸다.][In formula (cA), R 1c , R 2c and R 3c each independently represent a monovalent substituent.]
R1c, R2c 및 R3c로 나타나는 1가의 치환기는 특별히 한정되지 않지만, 불소 원자; 모노플루오로메틸기, 디플루오로메틸기, 트리플루오로메틸기, 테트라플루오로에틸기 등의 탄소수 1 내지 12의 플루오로알킬기; 모노플루오로페닐기, 테트라플루오로페닐기 등의 탄소수 6 내지 18의 플루오로아릴기; 시아노기; 니트로기; 및/또는 -SO2-R11c(R11c는 불소 원자를 가질 수 있는 탄소수 1 내지 12의 탄화수소기를 나타낸다.)인 것이 바람직하다.The monovalent substituents represented by R 1c , R 2c and R 3c are not particularly limited, but include a fluorine atom; Fluoroalkyl groups having 1 to 12 carbon atoms, such as monofluoromethyl group, difluoromethyl group, trifluoromethyl group, and tetrafluoroethyl group; fluoroaryl groups having 6 to 18 carbon atoms, such as monofluorophenyl group and tetrafluorophenyl group; Cyano group; nitro group; and/or -SO 2 -R 11c (R 11c represents a hydrocarbon group having 1 to 12 carbon atoms that may have a fluorine atom).
아미드 음이온으로는 식 (c-B)로 표시되는 음이온인 것이 바람직하다.The amide anion is preferably an anion represented by the formula (c-B).
[화학식 19][Formula 19]
[식 (c-B) 중, R4c 및 R5c는 각각 독립적으로 1가의 치환기를 나타낸다.][In formula (cB), R 4c and R 5c each independently represent a monovalent substituent.]
R4c 및 R5c로 나타나는 1가의 치환기는 특별히 한정되지 않지만, 불소 원자; 모노플루오로메틸기, 디플루오로메틸기, 트리플루오로메틸기, 테트라플루오로에틸기 등의 탄소수 1 내지 12의 플루오로알킬기; 모노플루오로페닐기, 테트라플루오로페닐기 등의 탄소수 6 내지 18의 플루오로아릴기; 시아노기; 니트로기; 및/또는 -SO2-R11c(R11c는 불소 원자를 가질 수 있는 탄소수 1 내지 12의 탄화수소기를 나타낸다.)인 것이 바람직하다.The monovalent substituents represented by R 4c and R 5c are not particularly limited, but include a fluorine atom; Fluoroalkyl groups having 1 to 12 carbon atoms, such as monofluoromethyl group, difluoromethyl group, trifluoromethyl group, and tetrafluoroethyl group; fluoroaryl groups having 6 to 18 carbon atoms, such as monofluorophenyl group and tetrafluorophenyl group; Cyano group; nitro group; and/or -SO 2 -R 11c (R 11c represents a hydrocarbon group having 1 to 12 carbon atoms that may have a fluorine atom).
설포네이트 음이온으로는 식 (c-C)로 표시되는 음이온인 것이 바람직하다.The sulfonate anion is preferably an anion represented by the formula (c-C).
[화학식 20][Formula 20]
[식 (c-C) 중, R6c는 1가의 치환기를 나타낸다.][In formula (cC), R 6c represents a monovalent substituent.]
R6c로 나타나는 1가의 치환기는 특별히 한정되지 않지만, 불소 원자; 모노플루오로메틸기, 디플루오로메틸기, 트리플루오로메틸기, 테트라플루오로에틸기 등의 탄소수 1 내지 12의 플루오로알킬기; 모노플루오로페닐기, 테트라플루오로페닐기 등의 탄소수 6 내지 18의 플루오로아릴기; 시아노기; 니트로기; 및/또는 -SO2-R11c(R11c는 불소 원자를 가질 수 있는 탄소수 1 내지 12의 탄화수소기를 나타낸다.)인 것이 바람직하다.The monovalent substituent represented by R 6c is not particularly limited, but includes a fluorine atom; Fluoroalkyl groups having 1 to 12 carbon atoms, such as monofluoromethyl group, difluoromethyl group, trifluoromethyl group, and tetrafluoroethyl group; fluoroaryl groups having 6 to 18 carbon atoms, such as monofluorophenyl group and tetrafluorophenyl group; Cyano group; nitro group; and/or -SO 2 -R 11c (R 11c represents a hydrocarbon group having 1 to 12 carbon atoms that may have a fluorine atom).
보레이트 음이온으로는 식 (c-D)로 표시되는 음이온인 것이 바람직하다.The borate anion is preferably an anion represented by the formula (c-D).
[화학식 21][Formula 21]
[식 (c-D) 중, R7c, R8c, R9c 및 R10c는 각각 독립적으로 1가의 치환기를 나타낸다.][In formula (cD), R 7c , R 8c , R 9c and R 10c each independently represent a monovalent substituent.]
R7c, R8c, R9c 및 R10c로 나타나는 1가의 치환기는 특별히 한정되지 않지만, 불소 원자; 모노플루오로메틸기, 디플루오로메틸기, 트리플루오로메틸기, 테트라플루오로에틸기 등의 탄소수 1 내지 12의 플루오로알킬기; 모노플루오로페닐기, 테트라플루오로페닐기 등의 탄소수 6 내지 18의 플루오로아릴기; 시아노기; 니트로기; 및/또는 -SO2-R11c(R11c는 불소 원자를 가질 수 있는 탄소수 1 내지 12의 탄화수소기를 나타낸다.)인 것이 바람직하다.The monovalent substituents represented by R 7c , R 8c , R 9c and R 10c are not particularly limited, but include a fluorine atom; Fluoroalkyl groups having 1 to 12 carbon atoms, such as monofluoromethyl group, difluoromethyl group, trifluoromethyl group, and tetrafluoroethyl group; fluoroaryl groups having 6 to 18 carbon atoms, such as monofluorophenyl group and tetrafluorophenyl group; Cyano group; nitro group; and/or -SO 2 -R 11c (R 11c represents a hydrocarbon group having 1 to 12 carbon atoms that may have a fluorine atom).
식 (c-A)로 표시되는 음이온은 식 (c-A1)로 표시되는 음이온인 것이 바람직하고,The anion represented by formula (c-A) is preferably an anion represented by formula (c-A1),
식 (c-B)로 표시되는 음이온은 식 (c-B1)로 표시되는 음이온인 것이 바람직하고,The anion represented by formula (c-B) is preferably an anion represented by formula (c-B1),
식 (c-C)로 표시되는 음이온은 식 (c-C1)로 표시되는 음이온인 것이 바람직하고,The anion represented by the formula (c-C) is preferably an anion represented by the formula (c-C1),
식 (c-D)로 표시되는 음이온은 식 (c-D1)로 표시되는 음이온 또는 식 (c-D2)로 표시되는 음이온인 것이 바람직하다.The anion represented by the formula (c-D) is preferably an anion represented by the formula (c-D1) or an anion represented by the formula (c-D2).
[화학식 22][Formula 22]
[식 (c-A1) 중, Rf1, Rf2 및 Rf3은 각각 독립적으로 탄소수 1 내지 12의 플루오로알킬기를 나타낸다.[In formula (c-A1), Rf 1 , Rf 2 and Rf 3 each independently represent a fluoroalkyl group having 1 to 12 carbon atoms.
식 (c-B1) 중, Rf4 및 Rf5는 각각 독립적으로 불소 원자 또는 탄소수 1 내지 12의 플루오로알킬기를 나타낸다.In formula (c-B1), Rf 4 and Rf 5 each independently represent a fluorine atom or a fluoroalkyl group having 1 to 12 carbon atoms.
식 (c-C1) 중, Rf6은 탄소수 1 내지 12의 플루오로알킬기를 나타낸다.In formula (c-C1), Rf 6 represents a fluoroalkyl group having 1 to 12 carbon atoms.
식 (c-D2) 중, R1d, R2d, R3d 및 R4d는 각각 독립적으로 불소 원자 또는 탄소수 1 내지 12의 플루오로알킬기를 나타낸다. n1 내지 n4는 각각 독립적으로 0 내지 5의 정수를 나타낸다.]In formula (c-D2), R 1d , R 2d , R 3d and R 4d each independently represent a fluorine atom or a fluoroalkyl group having 1 to 12 carbon atoms. n1 to n4 each independently represent an integer from 0 to 5.]
유기 음이온으로는 예컨대 아세테이트 음이온〔CH3COO-〕, 트리플루오로아세테이트 음이온〔CF3COO-〕, 메탄설포네이트 음이온〔CH3SO3 -〕, 트리플루오로메탄설포네이트 음이온〔CF3SO3 -〕, p-톨루엔설포네이트 음이온〔p-CH3C6H4SO3 -〕, 비스(트리플루오로메탄설포닐)이미드 음이온〔(CF3SO2)2N-〕, 트리스(트리플루오로메탄설포닐)메타니드 음이온〔(CF3SO2)3C-〕, 디메틸포스피네이트 음이온〔(CH3)2POO-〕, 퍼플루오로부탄설포네이트 음이온〔C4F9SO3 -〕, 비스(펜타플루오로에탄설포닐)이미드 음이온〔(C2F5SO2)2N-〕, 퍼플루오로부타노에이트 음이온〔C3F7COO-〕, (트리플루오로메탄설포닐)(트리플루오로메탄카보닐)이미드 음이온〔(CF3SO2)(CF3CO)N-〕, 퍼플루오로프로판-1,3-디설포네이트 음이온〔-O3S (CF2)3SO3 -〕, 테트라키스아릴보레이트 음이온(테트라키스페닐보레이트, 테트라키스(펜타플루오로페닐)보레이트), 테트라시아노보레이트, 트리스 (펜타플루오로에틸)트리플루오로포스페이트[P-(C2F5)3F3] 등을 들 수 있다.Organic anions include, for example, acetate anion [CH 3 COO - ], trifluoroacetate anion [CF 3 COO - ], methane sulfonate anion [CH 3 SO 3 - ], and trifluoromethane sulfonate anion [CF 3 SO 3 - ], p-toluenesulfonate anion [p-CH 3 C 6 H 4 SO 3 - ], bis(trifluoromethanesulfonyl)imide anion [(CF 3 SO 2 ) 2 N - ], tris(tris) Fluoromethanesulfonyl) methanide anion [(CF 3 SO 2 ) 3 C - ], dimethylphosphinate anion [(CH 3 ) 2 POO - ], perfluorobutane sulfonate anion [C 4 F 9 SO 3 - 〕, bis(pentafluoroethanesulfonyl)imide anion [(C 2 F 5 SO 2 ) 2 N - 〕, perfluorobutanoate anion [C 3 F 7 COO - 〕, (trifluoromethane Sulfonyl)(trifluoromethanecarbonyl)imide anion [(CF 3 SO 2 )(CF 3 CO)N - ], perfluoropropane-1,3-disulfonate anion [ - O 3 S (CF) 2 ) 3 SO 3 - ], tetrakisaryl borate anion (tetrakisphenyl borate, tetrakis (pentafluorophenyl) borate), tetracyanoborate, tris (pentafluoroethyl) trifluorophosphate [P - ( C 2 F 5 ) 3 F 3 ], etc.
무기 음이온으로는 예컨대 플루오라이드 음이온, 클로라이드 음이온, 브로미드 음이온, 요오다이드 음이온, 테트라클로로알루미네이트 음이온〔AlCl4 -〕, 헵타클로로디알루미네이트 음이온〔Al2Cl7 -〕, 테트라플루오로보레이트 음이온〔BF4 -〕, 헥사플루오로포스페이트 음이온〔PF6 -〕, 퍼클로레이트 음이온〔ClO4 -〕, 나이트레이트 음이온〔NO3 -〕, 헥사플루오로아르세네이트 음이온〔AsF6 -〕, 헥사플루오로안티모네이트 음이온〔SbF6 -〕, 헥사플루오로니오베이트 음이온〔NbF6 -〕, 헥사플루오로탄탈레이트 음이온〔TaF6 -〕, 디시안아미드 음이온〔(CN)2N-〕, 비스(플루오로설포닐)이미드 음이온(N-(SO2F)2), (폴리)히드로플루오로플루오라이드 음이온〔F(HF)m-〕(m은 1 이상 3 이하 정도), 티오시안 음이온〔SCN-〕, 카보네이트 음이온〔CO3 2-〕 등을 들 수 있다.Inorganic anions include, for example, fluoride anion, chloride anion, bromide anion, iodide anion, tetrachloroaluminate anion [AlCl 4 - ], heptachlorodialluminate anion [Al 2 Cl 7 - ], and tetrafluoroborate. Anion [BF 4 - ], hexafluorophosphate anion [PF 6 - ], perchlorate anion [ClO 4 - ], nitrate anion [NO 3 - ], hexafluoroarsenate anion [AsF 6 - ], hexafluoro Roantimonate anion [SbF 6 - ], hexafluoroniobate anion [NbF 6 - ], hexafluorotantalate anion [TaF 6 - ], dicyanamide anion [(CN) 2 N - ], bis( Fluorosulfonyl)imide anion (N - (SO 2 F) 2 ), (poly)hydrofluorofluoride anion [F(HF)m - ] (m is about 1 or more and 3 or less), thiocyanine anion [ SCN - ], carbonate anion [CO 3 2- ], etc. can be mentioned.
무기 음이온으로는 비스(플루오로설포닐)이미드 음이온(N-(SO2F)2)인 것이 바람직하다. 유기 음이온으로는 트리플루오로아세테이트 음이온〔CF3COO-〕, 트리플루오로메탄설포네이트 음이온〔CF3SO3 -〕, 비스(트리플루오로메탄설포닐)이미드 음이온〔(CF3SO2)2N-〕, 트리스(트리플루오로메탄설포닐)메타니드 음이온〔(CF3SO2)3C-〕, 퍼플루오로부탄설포네이트 음이온〔C4F9SO3 -〕, 비스(펜타플루오로에탄설포닐)이미드 음이온〔(C2F5SO2)2N-〕, 퍼플루오로부타노에이트 음이온〔C3F7COO-〕, (트리플루오로메탄설포닐)(트리플루오로메탄카보닐)이미드 음이온〔(CF3SO2)(CF3CO)N-〕, 퍼플루오로프로판-1,3-디설포네이트 음이온〔-O3S(CF2)3SO3 -〕, 테트라키스아릴보레이트 음이온(테트라키스페닐보레이트, 테트라키스(펜타플루오로페닐)보레이트), 테트라시아노보레이트가 바람직하고, 더욱 바람직하게 비스(트리플루오로메탄설포닐)이미드 음이온〔(CF3SO2)2N-〕, 트리스(트리플루오로메탄설포닐)메타니드 음이온〔(CF3SO2)3C-〕, 테트라키스(펜타플루오로페닐)보레이트, 테트라시아노보레이트이며, 특히 바람직하게 테트라키스(펜타플루오로페닐)보레이트이다.The inorganic anion is preferably bis(fluorosulfonyl)imide anion (N - (SO 2 F) 2 ). Organic anions include trifluoroacetate anion [CF 3 COO - ], trifluoromethane sulfonate anion [CF 3 SO 3 - ], and bis(trifluoromethanesulfonyl)imide anion [(CF 3 SO 2 ). 2 N - ], tris (trifluoromethanesulfonyl) methanide anion [(CF 3 SO 2 ) 3 C - ], perfluorobutanesulfonate anion [C 4 F 9 SO 3 - ], bis (pentafluor Roethanesulfonyl) imide anion [(C 2 F 5 SO 2 ) 2 N - ], perfluorobutanoate anion [C 3 F 7 COO - ], (trifluoromethanesulfonyl) (trifluoro Methanecarbonyl)imide anion [(CF 3 SO 2 )(CF 3 CO)N - ], perfluoropropane-1,3-disulfonate anion [ - O 3 S(CF 2 ) 3 SO 3 - 〕 , tetrakisaryl borate anion (tetrakisphenyl borate, tetrakis (pentafluorophenyl) borate), tetracyanoborate are preferred, and more preferably bis (trifluoromethanesulfonyl) imide anion [(CF 3 SO 2 ) 2 N - ], tris (trifluoromethanesulfonyl) methanide anion [(CF 3 SO 2 ) 3 C - ], tetrakis (pentafluorophenyl) borate, tetracyanoborate, especially preferred. It is tetrakis(pentafluorophenyl)borate.
화합물(I)로는 예컨대 이하의 표 1 내지 표 8에 기재된 화합물을 들 수 있다. 표 1에서의 화합물(1)은 식 (I-1)로 표시되는 양이온과 클로라이드 음이온을 포함하는 화합물이며, 이하에 나타내는 화합물이다.Compound (I) includes, for example, the compounds shown in Tables 1 to 8 below. Compound (1) in Table 1 is a compound containing a cation represented by formula (I-1) and a chloride anion, and is a compound shown below.
[화학식 23][Formula 23]
화합물(I)로는 화합물(3), 화합물(5), 화합물(8), 화합물(20), 화합물(24), 화합물(33), 화합물(34), 화합물(36), 화합물(37), 화합물(42), 화합물(48), 화합물(49), 화합물(50a), 화합물(50b), 화합물(52), 화합물(53), 화합물(91), 화합물(92), 화합물(94), 화합물(95), 화합물(100), 화합물(106), 화합물(107), 화합물(108a), 화합물(108b), 화합물(110), 화합물(120), 화합물(121), 화합물(123), 화합물(124), 화합물(129), 화합물(135), 화합물(136), 화합물(137a), 화합물(137b), 화합물(139), 화합물(140), 화합물(149), 화합물(150), 화합물(152), 화합물(153), 화합물(158), 화합물(164), 화합물(166a), 화합물(166b), 화합물(168), 화합물(169), 화합물(178), 화합물(179), 화합물(181), 화합물(182), 화합물(187), 화합물(193), 화합물(194), 화합물(195a), 화합물(195b), 화합물(197), 화합물(198), 화합물(206), 화합물(207), 화합물(208), 화합물(210), 화합물(211), 화합물(216), 화합물(222), 화합물(223), 화합물(224a), 화합물(224b), 화합물(226), 화합물(227)인 것이 바람직하다.Compound (I) includes compound (3), compound (5), compound (8), compound (20), compound (24), compound (33), compound (34), compound (36), compound (37), Compound (42), Compound (48), Compound (49), Compound (50a), Compound (50b), Compound (52), Compound (53), Compound (91), Compound (92), Compound (94), Compound (95), Compound (100), Compound (106), Compound (107), Compound (108a), Compound (108b), Compound (110), Compound (120), Compound (121), Compound (123), Compound (124), Compound (129), Compound (135), Compound (136), Compound (137a), Compound (137b), Compound (139), Compound (140), Compound (149), Compound (150), Compound (152), Compound (153), Compound (158), Compound (164), Compound (166a), Compound (166b), Compound (168), Compound (169), Compound (178), Compound (179), Compound (181), Compound (182), Compound (187), Compound (193), Compound (194), Compound (195a), Compound (195b), Compound (197), Compound (198), Compound (206), Compound (207), Compound (208), Compound (210), Compound (211), Compound (216), Compound (222), Compound (223), Compound (224a), Compound (224b), Compound (226), Compound (227) is preferred.
<화합물(I)의 제조 방법><Method for producing Compound (I)>
화합물(I)에서의 양이온인 식 (I-A)로 표시되는 양이온은 식 (M)으로 표시되는 화합물(이하 화합물(M)이라 하는 경우가 있다.)과 식 (b-1)로 표시되는 화합물(이하 화합물(b-1)이라 하는 경우가 있다.)과 식 (b-2)로 표시되는 화합물(이하 화합물(b-2)이라 하는 경우가 있다.)을 반응시킴으로써 제조할 수 있다.The cation represented by formula (I-A), which is the cation in compound (I), is the compound represented by formula (M) (hereinafter sometimes referred to as compound (M)) and the compound represented by formula (b-1) ( It can be produced by reacting (hereinafter sometimes referred to as compound (b-1)) with a compound represented by formula (b-2) (hereinafter sometimes referred to as compound (b-2)).
[화학식 24][Formula 24]
[식 중, 고리 W1, 고리 W2, 고리 W3 및 고리 W4는 각각 상기와 동일한 의미를 나타낸다.][In the formula, ring W 1 , ring W 2 , ring W 3 and ring W 4 each have the same meaning as above.]
화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응은 촉매의 존재 하에 수행되는 것이 바람직하다.The reaction between compound (M), compound (b-1), and compound (b-2) is preferably carried out in the presence of a catalyst.
촉매로는 포름산, 아세트산, 트리플루오로아세트산 등의 카복실산; 염화암모늄; 4염화티탄, 염화알루미늄, 알루미늄이소프로폭시드, 3브롬화붕소, 3불화붕소, 염화철, 염화갈륨, 4염화주석, 란타노이드트리플레이트 등의 루이스산; 메탄설폰산 무수물, 파라톨루엔설폰산 무수물, 트리플루오로메탄설폰산 무수물, 노나플루오로부탄설폰산 무수물 등의 설폰산 무수물; 파라톨루엔설폰산, 트리플루오로메탄설폰산, 플루오로황산 등의 설폰산; 디메틸황산, 메틸트리플레이트, 요오드메탄, 트리메틸옥소늄테트라플루오로보레이트, 플루오로황산디메틸 등의 친전자적 알킬화제; 파라톨루엔설포닐클로라이드, 트리플루오로메탄설포닐클로라이드 등의 설폰산 할로겐화물; 질산비스무트; 포름산암모늄, 아세트산암모늄 등의 카복실산염 등을 들 수 있다.Catalysts include carboxylic acids such as formic acid, acetic acid, and trifluoroacetic acid; ammonium chloride; Lewis acids such as titanium tetrachloride, aluminum chloride, aluminum isopropoxide, boron tribromide, boron trifluoride, iron chloride, gallium chloride, tin tetrachloride, and lanthanoid triflate; Sulfonic acid anhydrides such as methanesulfonic acid anhydride, p-toluenesulfonic acid anhydride, trifluoromethanesulfonic acid anhydride, and nonafluorobutanesulfonic acid anhydride; Sulfonic acids such as paratoluenesulfonic acid, trifluoromethanesulfonic acid, and fluorosulfuric acid; Electrophilic alkylating agents such as dimethyl sulfate, methyl triflate, iodomethane, trimethyloxonium tetrafluoroborate, and dimethyl fluorosulfate; Sulfonic acid halides such as paratoluenesulfonyl chloride and trifluoromethanesulfonyl chloride; bismuth nitrate; Carboxylate salts such as ammonium formate and ammonium acetate can be mentioned.
촉매의 사용량은 화합물(M) 1 몰에 대해 통상적으로 0.0001 내지 100 몰이며, 0.1 내지 10 몰인 것이 바람직하다.The amount of catalyst used is usually 0.0001 to 100 mole, preferably 0.1 to 10 mole, per 1 mole of compound (M).
화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응은 염기의 존재 하에 수행되는 것이 바람직하다.The reaction of compound (M), compound (b-1), and compound (b-2) is preferably carried out in the presence of a base.
염기로는 나트륨메톡시드, 칼륨메톡시드, 리튬메톡시드, 나트륨에톡시드, 칼륨에톡시드, 리튬에톡시드, 나트륨이소프로폭시드, 나트륨터셔리부톡시드, 칼륨터셔리부톡시드 등의 금속 알콕시드(바람직하게 알칼리 금속 알콕시드) 등; 수산화리튬, 수산화나트륨, 수산화칼륨 등의 금속 수산화물, 수소화나트륨, 수소화칼륨, 수소화알루미늄리튬, 수소화붕소나트륨 등의 금속 수소화물; 탄산나트륨, 탄산수소나트륨, 탄산칼륨, 탄산수소칼륨, 탄산리튬, 탄산수소리튬, 탄산세슘 등의 금속 탄산염; 메틸리튬, n-부틸리튬, sec-부틸리튬, tert-부틸리튬, 페닐리튬 등의 유기 리튬 화합물; 메틸마그네슘브로미드, 이소프로필마그네슘브로미드, n-부틸마그네슘브로미드, 이소프로필마그네슘클로라이드 등의 알킬 금속 할로겐화물; 리튬디이소프로필아미드, 리튬 2,2,6,6-테트라메틸피페리디드, 리튬(비스트리메틸실릴)아미드, 리튬테트라메틸피페리디드 등의 금속 아미드 화합물; 피리딘, 2,6-디메틸피리딘, 2,6-디-tert-부틸피리딘, 트리에틸아민, 디이소프로필에틸아민, 트리이소프로필아민, 2,2,6,6-테트라메틸피페리딘, 피페리딘, 피롤리딘, 프롤린, 아닐린, N,N-디메틸아닐린, 에틸렌디아민 등의 아민 화합물; 아세트산나트륨, 아세트산칼륨, 포름산나트륨 등의 금속 카복실산염; 아세트산암모늄 등의 카복실산암모늄염; 등을 들 수 있다.Bases include metals such as sodium methoxide, potassium methoxide, lithium methoxide, sodium ethoxide, potassium ethoxide, lithium ethoxide, sodium isopropoxide, sodium tertiary butoxide, and potassium tertiary butoxide. alkoxides (preferably alkali metal alkoxides), etc.; Metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; metal hydrides such as sodium hydride, potassium hydride, lithium aluminum hydride, and sodium borohydride; metal carbonates such as sodium carbonate, sodium bicarbonate, potassium carbonate, potassium bicarbonate, lithium carbonate, lithium bicarbonate, and cesium carbonate; Organic lithium compounds such as methyllithium, n-butyllithium, sec-butyllithium, tert-butyllithium, and phenyllithium; Alkyl metal halides such as methyl magnesium bromide, isopropyl magnesium bromide, n-butyl magnesium bromide, and isopropyl magnesium chloride; Metal amide compounds such as lithium diisopropylamide, lithium 2,2,6,6-tetramethylpiperidide, lithium (bistrimethylsilyl)amide, and lithium tetramethylpiperidide; Pyridine, 2,6-dimethylpyridine, 2,6-di-tert-butylpyridine, triethylamine, diisopropylethylamine, triisopropylamine, 2,2,6,6-tetramethylpiperidine, p Amine compounds such as ferridine, pyrrolidine, proline, aniline, N,N-dimethylaniline, and ethylenediamine; Metal carboxylates such as sodium acetate, potassium acetate, and sodium formate; Ammonium carboxylate salts such as ammonium acetate; etc. can be mentioned.
염기의 사용량으로는 화합물(M) 1 몰에 대해 통상적으로 0.01 내지 100 몰이며, 0.1 내지 10 몰인 것이 바람직하다.The amount of base used is usually 0.01 to 100 mol, preferably 0.1 to 10 mol, per 1 mol of compound (M).
화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응은 용매의 존재 하에 수행할 수 있다.The reaction of compound (M), compound (b-1), and compound (b-2) can be carried out in the presence of a solvent.
용매로는 아세토니트릴, 벤조니트릴 등의 니트릴 용매; 벤젠, 톨루엔, 크실렌, 아니솔의 방향족 탄화수소 용매; n-헥산, n-헵탄, 시클로헥산, 메틸시클로헥산 등의 지방족 탄화수소 용매; 클로로벤젠, 오르토디클로로벤젠, 메타디클로로벤젠, 파라디클로로벤젠, 디클로로메탄, 디클로로에탄, 테트라클로로에탄, 테트라클로로에틸렌, 클로로포름 등의 할로겐계 용매; 아세트산메틸, 아세트산에틸, 아세트산부틸, 아세트산이소부틸, 아세트산노르말프로필 등의 에스테르 용매; 메탄올, 에탄올, 이소프로판올, 헥사플루오로이소프로판올, n-부탄올, 이소부탄올, tert-부탄올 등의 알코올 용매; 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 디이소부틸케톤, 시클로헥사논 등의 케톤계 용매; 테트라히드로퓨란, 2-메틸테트라히드로퓨란, 시클로펜틸메틸에테르, 4-메틸테트라히드로피란, 디옥산, 디에틸에테르, tert-부틸메틸에테르, 디이소프로필에테르, 디메톡시에탄, 디에톡시메탄 등의 에테르 용매; N,N-디메틸아세트아미드, N,N-디메틸포름아미드 등의 아미드 용매; 디메틸설폭시드; 1,3-디메틸-2-이미다졸리디논; 헥사메틸인산트리아미드; 물 등 을 들 수 있다. 용매는 니트릴 용매, 방향족 탄화수소 용매, 알코올 용매, 케톤계 용매인 것이 바람직하고, 아세토니트릴, 톨루엔, 메탄올, 에탄올, 메틸에틸케톤, 메틸이소부틸케톤인 것이 보다 바람직하다.Solvents include nitrile solvents such as acetonitrile and benzonitrile; aromatic hydrocarbon solvents of benzene, toluene, xylene, and anisole; Aliphatic hydrocarbon solvents such as n-hexane, n-heptane, cyclohexane, and methylcyclohexane; Halogen-based solvents such as chlorobenzene, orthodichlorobenzene, metadichlorobenzene, paradichlorobenzene, dichloromethane, dichloroethane, tetrachloroethane, tetrachloroethylene, and chloroform; Ester solvents such as methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, and normal propyl acetate; alcohol solvents such as methanol, ethanol, isopropanol, hexafluoroisopropanol, n-butanol, isobutanol, and tert-butanol; Ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, diisobutyl ketone, and cyclohexanone; Tetrahydrofuran, 2-methyltetrahydrofuran, cyclopentylmethyl ether, 4-methyltetrahydropyran, dioxane, diethyl ether, tert-butylmethyl ether, diisopropyl ether, dimethoxyethane, diethoxymethane, etc. ether solvent; Amide solvents such as N,N-dimethylacetamide and N,N-dimethylformamide; dimethyl sulfoxide; 1,3-dimethyl-2-imidazolidinone; hexamethyl phosphate triamide; Water, etc. may be mentioned. The solvent is preferably a nitrile solvent, an aromatic hydrocarbon solvent, an alcohol solvent, or a ketone solvent, and is more preferably acetonitrile, toluene, methanol, ethanol, methyl ethyl ketone, or methyl isobutyl ketone.
용매의 사용량으로는 화합물(M) 1 질량부에 대해 통상적으로 0.1 내지 100 질량부이며, 1 내지 50 질량부인 것이 바람직하다.The amount of solvent used is usually 0.1 to 100 parts by mass, preferably 1 to 50 parts by mass, per 1 part by mass of compound (M).
화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응은 화합물(M)과 화합물(b-1)과 화합물(b-2)을 혼합함으로써 실시된다.The reaction between compound (M), compound (b-1), and compound (b-2) is carried out by mixing compound (M), compound (b-1), and compound (b-2).
화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응은 화합물(M), 염기 및 촉매의 혼합물에 화합물(b-1)과 화합물(b-2)을 가하는 것이 바람직하다.For the reaction of compound (M), compound (b-1), and compound (b-2), it is preferable to add compound (b-1) and compound (b-2) to a mixture of compound (M), base, and catalyst. .
화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응은 질소 분위기 하에 실시되는 것이 바람직하다.The reaction of compound (M), compound (b-1), and compound (b-2) is preferably carried out under a nitrogen atmosphere.
화합물(b-1)의 사용량은 화합물(M) 1 몰에 대해 통상적으로 0.1 내지 10 몰이며, 0.5 내지 5 몰인 것이 바람직하다.The amount of compound (b-1) used is usually 0.1 to 10 mol, preferably 0.5 to 5 mol, per 1 mol of compound (M).
화합물(b-2)의 사용량은 화합물(M) 1 몰에 대해 통상적으로 0.1 내지 10 몰이며, 0.5 내지 5 몰인 것이 바람직하다.The amount of compound (b-2) used is usually 0.1 to 10 mol, preferably 0.5 to 5 mol, per 1 mol of compound (M).
화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응 시간은 통상적으로 0.01 내지 100 시간이다.The reaction time of compound (M), compound (b-1), and compound (b-2) is usually 0.01 to 100 hours.
화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응 온도는 통상적으로 -100 내지 150 ℃이다.The reaction temperature of compound (M), compound (b-1), and compound (b-2) is usually -100 to 150°C.
화합물(b-1) 및 화합물(b-2)로는 예컨대 인돌린, 메틸인돌린, 니트로인돌린, 아미노비페닐, 시아노아미노비페닐(예컨대 4-아미노-4'-시아노비페닐), 디페닐페닐아닐린(4-(3,5-디페닐페닐)아닐린 등), 피롤리딘, 피페리딘, 모폴린, 이미다졸, 트리아졸 등을 들 수 있다.Compound (b-1) and compound (b-2) include, for example, indoline, methylindoline, nitroindoline, aminobiphenyl, cyanoaminobiphenyl (such as 4-amino-4'-cyanobiphenyl), and diphenyl. Examples include phenylaniline (4-(3,5-diphenylphenyl)aniline, etc.), pyrrolidine, piperidine, morpholine, imidazole, and triazole.
화합물(M)로는 4,4a,5,6-테트라히드로-7-히드록시-2(3H)-나프탈렌온을 들 수 있다.Compound (M) includes 4,4a,5,6-tetrahydro-7-hydroxy-2(3H)-naphthalenone.
또한 화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응은 단계적으로 수행할 수 있다. 예컨대 화합물(M)과 화합물(b-2)를 반응시켜 식 (M-A)로 표시되는 화합물(이하 화합물(M-A)이라 하는 경우가 있다.)을 얻고, 얻어진 화합물(M-A)과 화합물(b-1)을 반응시켜 식 (I-A)로 표시되는 양이온을 얻을 수 있다.Additionally, the reaction between compound (M), compound (b-1), and compound (b-2) can be carried out stepwise. For example, compound (M) and compound (b-2) are reacted to obtain a compound represented by the formula (M-A) (hereinafter sometimes referred to as compound (M-A)), and the obtained compound (M-A) and compound (b-1) are obtained. ) can be reacted to obtain a cation represented by formula (I-A).
[화학식 25][Formula 25]
[식 중, 고리 W1, 고리 W2, 고리 W3 및 고리 W4는 각각 상기와 동일한 의미를 나타낸다.][In the formula, ring W 1 , ring W 2 , ring W 3 and ring W 4 each have the same meaning as above.]
화합물(M)과 화합물(b-2)의 반응은 화합물(M)과 화합물(b-2)을 혼합함으로써 실시된다.The reaction between compound (M) and compound (b-2) is carried out by mixing compound (M) and compound (b-2).
화합물(M)과 화합물(b-2)의 반응은 질소 분위기 하에 실시되는 것이 바람직하다.The reaction between compound (M) and compound (b-2) is preferably carried out under a nitrogen atmosphere.
화합물(M)과 화합물(b-2)의 반응은 용매의 존재 하에 수행할 수 있다. 용매로는 아세토니트릴, 벤조니트릴 등의 니트릴 용매; 벤젠, 톨루엔, 크실렌, 아니솔의 방향족 탄화수소 용매; n-헥산, n-헵탄, 시클로헥산, 메틸시클로헥산 등의 지방족 탄화수소 용매; 클로로벤젠, 오르토디클로로벤젠, 메타디클로로벤젠, 파라디클로로벤젠, 디클로로메탄, 디클로로에탄, 테트라클로로에탄, 테트라클로로에틸렌, 클로로포름 등의 할로겐계 용매; 아세트산메틸, 아세트산에틸, 아세트산부틸, 아세트산이소부틸, 아세트산노르말프로필 등의 에스테르 용매; 메탄올, 에탄올, 이소프로판올, 헥사플루오로이소프로판올, n-부탄올, 이소부탄올, tert-부탄올 등의 알코올 용매; 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 디이소부틸케톤, 시클로헥사논 등의 케톤계 용매; 테트라히드로퓨란, 2-메틸테트라히드로퓨란, 시클로펜틸메틸에테르, 4-메틸테트라히드로피란, 디옥산, 디에틸에테르, tert-부틸메틸에테르, 디이소프로필에테르, 디메톡시에탄, 디에톡시메탄 등의 에테르 용매; N,N-디메틸아세트아미드, N,N-디메틸포름아미드 등의 아미드 용매; 디메틸설폭시드; 1,3-디메틸-2-이미다졸리디논; 헥사메틸인산트리아미드; 물 등을 들 수 있다. 용매는 니트릴 용매, 방향족 탄화수소 용매, 알코올 용매, 케톤계 용매인 것이 바람직하고, 아세토니트릴, 톨루엔, 메탄올, 에탄올, 메틸에틸케톤, 메틸이소부틸케톤인 것이 보다 바람직하다.The reaction between compound (M) and compound (b-2) can be performed in the presence of a solvent. Solvents include nitrile solvents such as acetonitrile and benzonitrile; aromatic hydrocarbon solvents of benzene, toluene, xylene, and anisole; Aliphatic hydrocarbon solvents such as n-hexane, n-heptane, cyclohexane, and methylcyclohexane; Halogen-based solvents such as chlorobenzene, orthodichlorobenzene, metadichlorobenzene, paradichlorobenzene, dichloromethane, dichloroethane, tetrachloroethane, tetrachloroethylene, and chloroform; Ester solvents such as methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, and normal propyl acetate; alcohol solvents such as methanol, ethanol, isopropanol, hexafluoroisopropanol, n-butanol, isobutanol, and tert-butanol; Ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, diisobutyl ketone, and cyclohexanone; Tetrahydrofuran, 2-methyltetrahydrofuran, cyclopentylmethyl ether, 4-methyltetrahydropyran, dioxane, diethyl ether, tert-butylmethyl ether, diisopropyl ether, dimethoxyethane, diethoxymethane, etc. ether solvent; Amide solvents such as N,N-dimethylacetamide and N,N-dimethylformamide; dimethyl sulfoxide; 1,3-dimethyl-2-imidazolidinone; hexamethyl phosphate triamide; Water, etc. may be mentioned. The solvent is preferably a nitrile solvent, an aromatic hydrocarbon solvent, an alcohol solvent, or a ketone solvent, and more preferably acetonitrile, toluene, methanol, ethanol, methyl ethyl ketone, or methyl isobutyl ketone.
용매의 사용량으로는 화합물(M) 1 질량부에 대해 통상적으로 0.1 내지 100 질량부이며, 1 내지 50 질량부인 것이 바람직하다.The amount of solvent used is usually 0.1 to 100 parts by mass, preferably 1 to 50 parts by mass, per 1 part by mass of compound (M).
화합물(b-2)의 사용량은 화합물(M) 1 몰 당량에 대해 통상적으로 0.1 내지 10 몰이며, 0.5 내지 5 몰인 것이 바람직하다.The amount of compound (b-2) used is usually 0.1 to 10 mole, preferably 0.5 to 5 mole, per 1 mole equivalent of compound (M).
화합물(M)과 화합물(b-2)의 반응 시간은 통상적으로 0.01 내지 100 시간이다.The reaction time between compound (M) and compound (b-2) is usually 0.01 to 100 hours.
화합물(M)과 화합물(b-2)의 반응 온도는 통상적으로 -100 내지 150 ℃이다.The reaction temperature between compound (M) and compound (b-2) is usually -100 to 150°C.
화합물(M-A)과 화합물(b-1)의 반응은 화합물(M-A)과 화합물(b-1)을 혼합함으로써 실시된다. 화합물(M-A)과 화합물(b-1)의 반응은 촉매의 존재 하에 수행되는 것이 바람직하다.The reaction between compound (M-A) and compound (b-1) is carried out by mixing compound (M-A) and compound (b-1). The reaction between compound (M-A) and compound (b-1) is preferably carried out in the presence of a catalyst.
촉매로는 포름산, 아세트산, 트리플루오로아세트산 등의 카복실산; 염화암모늄; 4염화티탄, 염화알루미늄, 알루미늄이소프로폭시드, 3브롬화붕소, 3불화붕소, 염화철, 염화갈륨, 4염화주석, 란타노이드트리플레이트 등의 루이스산; 메탄설폰산 무수물, 파라톨루엔설폰산 무수물, 트리플루오로메탄설폰산 무수물, 노나플루오로부탄설폰산 무수물 등의 설폰산 무수물; 파라톨루엔설폰산, 트리플루오로메탄설폰산, 플루오로황산 등의 설폰산; 디메틸황산, 메틸트리플레이트, 요오드메탄, 트리메틸옥소늄테트라플루오로보레이트, 플루오로황산디메틸 등의 친전자적 알킬화제; 파라톨루엔설포닐클로라이드, 트리플루오로메탄설포닐클로라이드 등의 설폰산 할로겐화물; 포름산암모늄, 아세트산암모늄 등의 카복실산염 등을 들 수 있다.Catalysts include carboxylic acids such as formic acid, acetic acid, and trifluoroacetic acid; ammonium chloride; Lewis acids such as titanium tetrachloride, aluminum chloride, aluminum isopropoxide, boron tribromide, boron trifluoride, iron chloride, gallium chloride, tin tetrachloride, and lanthanoid triflate; Sulfonic acid anhydrides such as methanesulfonic acid anhydride, p-toluenesulfonic acid anhydride, trifluoromethanesulfonic acid anhydride, and nonafluorobutanesulfonic acid anhydride; Sulfonic acids such as paratoluenesulfonic acid, trifluoromethanesulfonic acid, and fluorosulfuric acid; Electrophilic alkylating agents such as dimethyl sulfate, methyl triflate, iodomethane, trimethyloxonium tetrafluoroborate, and dimethyl fluorosulfate; Sulfonic acid halides such as paratoluenesulfonyl chloride and trifluoromethanesulfonyl chloride; Carboxylate salts such as ammonium formate and ammonium acetate can be mentioned.
촉매의 사용량은 화합물(M-A) 1 몰 당량에 대해 통상적으로 0.0001 내지 100 몰이며, 0.1 내지 10 몰인 것이 바람직하다.The amount of catalyst used is usually 0.0001 to 100 mole, preferably 0.1 to 10 mole, per 1 mole equivalent of compound (M-A).
화합물(M-A)과 화합물(b-1)의 반응은 염기의 존재 하에 수행되는 것이 바람직하다.The reaction between compound (M-A) and compound (b-1) is preferably carried out in the presence of a base.
염기로는 나트륨메톡시드, 칼륨메톡시드, 리튬메톡시드, 나트륨에톡시드, 칼륨에톡시드, 리튬에톡시드, 나트륨이소프로폭시드, 나트륨터셔리부톡시드, 칼륨터셔리부톡시드 등의 금속 알콕시드(바람직하게 알칼리 금속 알콕시드) 등; 수산화리튬, 수산화나트륨, 수산화칼륨 등의 금속 수산화물, 수소화나트륨, 수소화칼륨, 수소화알루미늄리튬, 수소화붕소나트륨 등의 금속 수소화물; 탄산나트륨, 탄산수소나트륨, 탄산칼륨, 탄산수소칼륨, 탄산리튬, 탄산수소리튬, 탄산세슘 등의 금속 탄산염; 메틸리튬, n-부틸리튬, sec-부틸리튬, tert-부틸리튬, 페닐리튬 등의 유기 리튬 화합물; 메틸마그네슘브로미드, 이소프로필마그네슘브로미드, n-부틸마그네슘브로미드, 이소프로필마그네슘클로라이드 등의 알킬 금속 할로겐화물; 리튬디이소프로필아미드, 리튬 2,2,6,6-테트라메틸피페리디드, 리튬(비스트리메틸실릴)아미드, 리튬테트라메틸피페리디드 등의 금속 아미드 화합물; 피리딘, 2,6-디메틸피리딘, 2,6-디-tert-부틸피리딘, 트리에틸아민, 디이소프로필에틸아민, 트리이소프로필아민, 2,2,6,6-테트라메틸피페리딘, 피페리딘, 피롤리딘, 프롤린, 아닐린, N,N-디메틸아닐린, 에틸렌디아민 등의 아민 화합물; 아세트산나트륨, 아세트산칼륨, 포름산나트륨 등의 금속 카복실산염; 아세트산암모늄 등의 카복실산암모늄염; 등을 들 수 있다.Bases include metals such as sodium methoxide, potassium methoxide, lithium methoxide, sodium ethoxide, potassium ethoxide, lithium ethoxide, sodium isopropoxide, sodium tertiary butoxide, and potassium tertiary butoxide. alkoxides (preferably alkali metal alkoxides), etc.; Metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; metal hydrides such as sodium hydride, potassium hydride, lithium aluminum hydride, and sodium borohydride; metal carbonates such as sodium carbonate, sodium bicarbonate, potassium carbonate, potassium bicarbonate, lithium carbonate, lithium bicarbonate, and cesium carbonate; Organic lithium compounds such as methyllithium, n-butyllithium, sec-butyllithium, tert-butyllithium, and phenyllithium; Alkyl metal halides such as methyl magnesium bromide, isopropyl magnesium bromide, n-butyl magnesium bromide, and isopropyl magnesium chloride; Metal amide compounds such as lithium diisopropylamide, lithium 2,2,6,6-tetramethylpiperidide, lithium (bistrimethylsilyl)amide, and lithium tetramethylpiperidide; Pyridine, 2,6-dimethylpyridine, 2,6-di-tert-butylpyridine, triethylamine, diisopropylethylamine, triisopropylamine, 2,2,6,6-tetramethylpiperidine, p Amine compounds such as ferridine, pyrrolidine, proline, aniline, N,N-dimethylaniline, and ethylenediamine; Metal carboxylates such as sodium acetate, potassium acetate, and sodium formate; Ammonium carboxylate salts such as ammonium acetate; etc. can be mentioned.
염기의 사용량으로는 화합물(M-A) 1 몰에 대해 통상적으로 0.0001 내지 100 몰이며, 0.1 내지 10 몰인 것이 바람직하다.The amount of base used is usually 0.0001 to 100 mol, preferably 0.1 to 10 mol, per 1 mol of compound (M-A).
화합물(M-A)과 화합물(b-1)의 반응은 용매의 존재 하에 수행할 수 있다.The reaction between compound (M-A) and compound (b-1) can be performed in the presence of a solvent.
용매로는 아세토니트릴, 벤조니트릴 등의 니트릴 용매; 벤젠, 톨루엔, 크실렌, 아니솔의 방향족 탄화수소 용매; n-헥산, n-헵탄, 시클로헥산, 메틸시클로헥산 등의 지방족 탄화수소 용매; 클로로벤젠, 오르토디클로로벤젠, 메타디클로로벤젠, 파라디클로로벤젠, 디클로로메탄, 디클로로에탄, 테트라클로로에탄, 테트라클로로에틸렌, 클로로포름 등의 할로겐계 용매; 아세트산메틸, 아세트산에틸, 아세트산부틸, 아세트산이소부틸, 아세트산노르말프로필 등의 에스테르 용매; 메탄올, 에탄올, 이소프로판올, 헥사플루오로이소프로판올, n-부탄올, 이소부탄올, tert-부탄올 등의 알코올 용매; 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 디이소부틸케톤, 시클로헥사논 등의 케톤계 용매; 테트라히드로퓨란, 2-메틸테트라히드로퓨란, 시클로펜틸메틸에테르, 4-메틸테트라히드로피란, 디옥산, 디에틸에테르, tert-부틸메틸에테르, 디이소프로필에테르, 디메톡시에탄, 디에톡시메탄 등의 에테르 용매; N,N-디메틸아세트아미드, N,N-디메틸포름아미드 등의 아미드 용매; 디메틸설폭시드; 1,3-디메틸-2-이미다졸리디논; 헥사메틸인산트리아미드; 물 등을 들 수 있다. 용매는 니트릴 용매, 방향족 탄화수소 용매, 알코올 용매, 케톤계 용매인 것이 바람직하고, 아세토니트릴, 톨루엔, 메탄올, 에탄올, 메틸에틸케톤, 메틸이소부틸케톤인 것이 보다 바람직하다.Solvents include nitrile solvents such as acetonitrile and benzonitrile; aromatic hydrocarbon solvents of benzene, toluene, xylene, and anisole; Aliphatic hydrocarbon solvents such as n-hexane, n-heptane, cyclohexane, and methylcyclohexane; Halogen-based solvents such as chlorobenzene, orthodichlorobenzene, metadichlorobenzene, paradichlorobenzene, dichloromethane, dichloroethane, tetrachloroethane, tetrachloroethylene, and chloroform; Ester solvents such as methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, and normal propyl acetate; alcohol solvents such as methanol, ethanol, isopropanol, hexafluoroisopropanol, n-butanol, isobutanol, and tert-butanol; Ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, diisobutyl ketone, and cyclohexanone; Tetrahydrofuran, 2-methyltetrahydrofuran, cyclopentylmethyl ether, 4-methyltetrahydropyran, dioxane, diethyl ether, tert-butylmethyl ether, diisopropyl ether, dimethoxyethane, diethoxymethane, etc. ether solvent; Amide solvents such as N,N-dimethylacetamide and N,N-dimethylformamide; dimethyl sulfoxide; 1,3-dimethyl-2-imidazolidinone; hexamethyl phosphate triamide; Water, etc. may be mentioned. The solvent is preferably a nitrile solvent, an aromatic hydrocarbon solvent, an alcohol solvent, or a ketone solvent, and is more preferably acetonitrile, toluene, methanol, ethanol, methyl ethyl ketone, or methyl isobutyl ketone.
용매의 사용량으로는 화합물(M-A) 1 질량부에 대해 통상적으로 0.1 내지 100 질량부이며, 1 내지 50 질량부인 것이 바람직하다.The amount of solvent used is usually 0.1 to 100 parts by mass, preferably 1 to 50 parts by mass, per 1 part by mass of compound (M-A).
화합물(b-1)의 사용량은 화합물(M-A) 1 몰에 대해 통상적으로 0.1 내지 10 몰이며, 0.5 내지 5 몰인 것이 바람직하다.The amount of compound (b-1) used is usually 0.1 to 10 mol, preferably 0.5 to 5 mol, per 1 mol of compound (M-A).
화합물(M-A)과 화합물(b-1)의 반응 시간은 통상적으로 0.01 내지 100 시간이다. 화합물(M-A)과 화합물(b-1)의 반응 온도는 통상적으로 -100 내지 150 ℃이다.The reaction time between compound (M-A) and compound (b-1) is usually 0.01 to 100 hours. The reaction temperature between compound (M-A) and compound (b-1) is usually -100 to 150°C.
화합물(M-A)로는 예컨대 이하에 기재된 화합물을 들 수 있다.Examples of the compound (M-A) include the compounds described below.
[화학식 26][Formula 26]
[화학식 27][Formula 27]
식 (I-B)로 표시되는 양이온은 화합물(M)과 식 (b-3)으로 표시되는 화합물(이하 화합물(b-3)이라 하는 경우가 있다.)과 식 (b-4)로 표시되는 화합물(이하 화합물(b-4)이라 하는 경우가 있다.)을 반응시킴으로써 제조할 수 있다.The cation represented by formula (I-B) is compound (M), the compound represented by formula (b-3) (hereinafter sometimes referred to as compound (b-3)), and the compound represented by formula (b-4). It can be produced by reacting (hereinafter sometimes referred to as compound (b-4)).
[화학식 28][Formula 28]
[식 중, 고리 W1, 고리 W2, Ar1, Ar2, R1 및 R2는 각각 상기와 동일한 의미를 나타낸다.][In the formula, ring W 1 , ring W 2 , Ar 1 , Ar 2 , R 1 and R 2 each have the same meaning as above.]
화합물(M)과 화합물(b-3)과 화합물(b-4)의 반응은 촉매의 존재 하에 수행되는 것이 바람직하다.The reaction of compound (M), compound (b-3), and compound (b-4) is preferably carried out in the presence of a catalyst.
촉매로는 화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응에 사용할 수 있는 촉매와 동일한 것을 들 수 있다.Catalysts include the same catalysts that can be used for the reaction of compound (M), compound (b-1), and compound (b-2).
촉매의 사용량은 화합물(M) 1 몰에 대해 통상적으로 0.0001 내지 100 몰이며, 0.1 내지 10 몰인 것이 바람직하다.The amount of catalyst used is usually 0.0001 to 100 mole, preferably 0.1 to 10 mole, per 1 mole of compound (M).
화합물(M)과 화합물(b-3)과 화합물(b-4)의 반응은 염기의 존재 하에 수행되는 것이 바람직하다.The reaction of compound (M), compound (b-3), and compound (b-4) is preferably carried out in the presence of a base.
염기로는 화합물(M)과 화합물(b-1)과 화합물(b-2)의 반응에 사용할 수 있는 염기와 동일한 것을 들 수 있다.Examples of the base include the same bases that can be used in the reaction of compound (M), compound (b-1), and compound (b-2).
염기의 사용량으로는 화합물(M) 1 몰에 대해 통상적으로 0.0001 내지 100 몰이며, 0.1 내지 10 몰인 것이 바람직하다.The amount of base used is usually 0.0001 to 100 mol, preferably 0.1 to 10 mol, per 1 mol of compound (M).
화합물(M)과 화합물(b-3)과 화합물(b-4)의 반응은 화합물(M)과 화합물(b-3)과 화합물(b-4)을 혼합함으로써 실시된다. 화합물(M)과 화합물(b-3)과 화합물(b-4)의 혼합은 화합물(M)과 염기를 혼합한 혼합물에 촉매와 화합물(b-3)과 화합물(b-4)을 혼합하는 것이 바람직하고, 화합물(M)과 염기를 혼합한 혼합물에 촉매를 가하여 얻어진 혼합물에 화합물(b-3)과 화합물(b-4)을 혼합하는 것이 보다 바람직하다.The reaction between compound (M), compound (b-3), and compound (b-4) is carried out by mixing compound (M), compound (b-3), and compound (b-4). Mixing compound (M), compound (b-3), and compound (b-4) is mixing the catalyst, compound (b-3), and compound (b-4) with the mixture of compound (M) and base. It is preferable, and it is more preferable to mix compound (b-3) and compound (b-4) with the mixture obtained by adding a catalyst to the mixture of compound (M) and a base.
화합물(b-3)의 사용량은 화합물(M) 1 몰에 대해 통상적으로 0.1 내지 10 몰이며, 0.5 내지 5 몰인 것이 바람직하다.The amount of compound (b-3) used is usually 0.1 to 10 mol, preferably 0.5 to 5 mol, per 1 mol of compound (M).
화합물(b-4)의 사용량은 화합물(M) 1 몰에 대해 통상적으로 0.1 내지 10 몰이며, 0.5 내지 5 몰인 것이 바람직하다.The amount of compound (b-4) used is usually 0.1 to 10 mol, preferably 0.5 to 5 mol, per 1 mol of compound (M).
화합물(M)과 화합물(b-3)과 화합물(b-4)의 반응 시간은 통상적으로 0.1 내지 100 시간이다.The reaction time of compound (M), compound (b-3), and compound (b-4) is usually 0.1 to 100 hours.
화합물(M)과 화합물(b-3)과 화합물(b-4)의 반응 온도는 통상적으로 -100 내지 150℃이다.The reaction temperature of compound (M), compound (b-3), and compound (b-4) is usually -100 to 150°C.
화합물(I)의 음이온을 원하는 음이온으로 교환하고자 할 경우에는 화합물(I)과 원하는 음이온을 포함하는 염을 혼합함으로써 이온 교환을 수행하면 된다. 상기 이온 교환은 용매의 존재 하에 수행할 수 있다. 원하는 음이온을 포함하는 염은 예컨대 리튬염, 나트륨염, 칼륨염, 세슘염, 바륨염, 칼슘염, 마그네슘염, 암모늄염 등을 들 수 있다.When the anion of Compound (I) is to be exchanged for a desired anion, ion exchange can be performed by mixing Compound (I) with a salt containing the desired anion. The ion exchange can be performed in the presence of a solvent. Salts containing the desired anion include, for example, lithium salts, sodium salts, potassium salts, cesium salts, barium salts, calcium salts, magnesium salts, and ammonium salts.
<화합물(I)을 포함하는 조성물><Composition containing compound (I)>
본 발명은 화합물(I)을 함유하는 조성물도 포함한다.The present invention also includes compositions containing compound (I).
화합물(I)을 포함하는 조성물은 모든 용도에 사용 가능하지만, 그 중에서도 햇빛 또는 자외선을 포함하는 빛에 노출될 가능성이 있는 용도에 특히 적합하게 사용될 수 있다. 구체적인 예로는 예컨대 유리 대체품과 그 표면 코팅재; 주거, 시설, 수송 기기 등의 창유리, 채광 유리 및 광원 보호 유리용 코팅재; 주거, 시설, 수송 기기 등의 윈도우 필름; 주거, 시설, 수송 기기 등의 내외장재 및 내외장용 도료 및 그 도료에 의해 형성되는 도막; 알키드 수지 래커 도료 및 그 도료에 의해 형성되는 도막; 아크릴 래커 도료 및 그 도료에 의해 형성되는 도막; 형광등, 수은등 등의 자외선을 발하는 광원용 부재; 정밀 기계, 전자전기 기기용 부재, 각종 디스플레이에서 발생하는 전자파 등의 차단용 재료; 식품, 화학품, 약품 등의 용기 또는 포장재; 보틀, 박스, 블리스터, 컵, 특수 포장용, 컴팩트 디스크 코트, 농공업용 시트 또는 필름재; 인쇄물, 염색물, 염·안료 등의 퇴색 방지제; 폴리머 지지체용(예컨대 기계 및 자동차 부품과 같은 플라스틱제 부품용) 보호막; 인쇄물 오버코트; 잉크젯 매체 피막; 적층 매트; 옵티컬 라이트 필름; 안전 유리 및 프론트 유리의 중간층; 일렉트로크로믹 또는 포토크로믹 용도; 오버라미네이트 필름; 태양열 제어막; 자외선 차단 크림, 샴푸, 린스, 정발료 등의 화장품; 스포츠웨어, 스타킹, 모자 등의 의류용 섬유 제품 및 섬유; 커튼, 융단, 벽지 등의 가정용 내장품; 플라스틱 렌즈, 콘택트 렌즈, 의안 등의 의료용 기구; 광학 필터, 백라이트 디스플레이 필름, 프리즘, 거울, 사진 재료 등의 광학 용품; 금형막, 전사식 스티커, 낙서 방지막, 테이프, 잉크 등의 문방구; 표시판, 표시기 등과 그 표면 코팅재 등을 들 수 있다.The composition containing compound (I) can be used for all purposes, but it can be particularly suitably used for applications that may be exposed to light including sunlight or ultraviolet rays. Specific examples include, for example, glass substitutes and their surface coatings; Coatings for window glass, skylight glass, and light source protection glass for residences, facilities, transportation equipment, etc.; Window films for residences, facilities, transportation equipment, etc.; Interior and exterior materials and interior and exterior paints for housing, facilities, transportation equipment, etc., and coating films formed by the paints; Alkyd resin lacquer paints and coating films formed by the paints; Acrylic lacquer paint and the coating film formed by the paint; Members for light sources that emit ultraviolet rays, such as fluorescent lamps and mercury lamps; Materials for blocking electromagnetic waves generated from precision machinery, electronic and electrical equipment members, and various displays; Containers or packaging materials for food, chemicals, drugs, etc.; Bottles, boxes, blisters, cups, special packaging, compact disc coats, agricultural and industrial sheet or film materials; Anti-fade agents for printed materials, dyes, dyes, pigments, etc.; Protective films for polymer supports (e.g. for plastic parts such as machinery and automobile parts); printed overcoat; inkjet media film; laminated mat; optical light film; Interlayer of safety glass and windshield; Electrochromic or photochromic applications; Overlaminate film; solar control membrane; Cosmetics such as sunscreen cream, shampoo, conditioner, and hair conditioner; Textile products and textiles for clothing such as sportswear, stockings, hats, etc.; Household interior items such as curtains, carpets, wallpaper, etc.; Medical devices such as plastic lenses, contact lenses, artificial eyes, etc.; Optical supplies such as optical filters, backlight display films, prisms, mirrors, photographic materials, etc.; Stationery products such as mold films, transfer stickers, anti-graffiti films, tapes, and ink; Examples include display boards, indicators, etc., and their surface coating materials.
화합물(I)을 포함하는 조성물은 화합물(I)과 수지를 포함하는 수지 조성물(이하 "수지 조성물"이라 하는 경우가 있다.) 또는 화합물(I)과 중합성 모노머를 포함하는 조성물(이하 "조성물(1)"이라 하는 경우가 있다.)인 것이 바람직하다.The composition containing compound (I) is a resin composition containing compound (I) and a resin (hereinafter sometimes referred to as “resin composition”) or a composition containing compound (I) and a polymerizable monomer (hereinafter referred to as “composition”). (1) It is preferable that it is sometimes referred to as “(1)”.
수지 조성물에 사용되는 수지로는 공지된 각종 성형체, 시트, 필름 등의 제조에 종래부터 사용되고 있는 열가소성 수지 및 열경화성 수지 등을 들 수 있다.Resins used in the resin composition include thermoplastic resins and thermosetting resins that have been conventionally used in the production of various known molded bodies, sheets, films, etc.
열가소성 수지로는 예컨대 폴리에틸렌 수지, 폴리프로필렌 수지, 폴리시클로올레핀 수지 등의 올레핀계 수지, 폴리(메타)아크릴산에스테르계 수지, 폴리스티렌계 수지, 스티렌-아크릴로니트릴계 수지, 아크릴로니트릴-부타디엔-스티렌계 수지, 폴리염화비닐계 수지, 폴리염화비닐리덴계 수지, 폴리아세트산비닐계 수지, 폴리비닐부티랄계 수지, 에틸렌-아세트산비닐계 공중합체, 에틸렌비닐알코올계 수지, 폴리에틸렌테레프탈레이트 수지, 폴리부틸렌테레프탈레이트 수지, 액정 폴리에스테르 수지 등의 폴리에스테르계 수지, 폴리아세탈 수지, 폴리아미드 수지, 폴리카보네이트 수지, 폴리우레탄 수지 및 폴리페닐렌설파이드 수지 등을 들 수 있다. 이들 수지를 1종 또는 2종 이상의 폴리머 블렌드 혹은 폴리머 알로이로 사용할 수도 있다.Thermoplastic resins include, for example, olefin resins such as polyethylene resin, polypropylene resin, and polycycloolefin resin, poly(meth)acrylic acid ester resin, polystyrene resin, styrene-acrylonitrile resin, and acrylonitrile-butadiene-styrene. -based resin, polyvinyl chloride-based resin, polyvinylidene chloride-based resin, polyvinyl acetate-based resin, polyvinyl butyral-based resin, ethylene-vinyl acetate-based copolymer, ethylene vinyl alcohol-based resin, polyethylene terephthalate resin, polybutylene Examples include polyester resins such as terephthalate resin and liquid crystal polyester resin, polyacetal resin, polyamide resin, polycarbonate resin, polyurethane resin, and polyphenylene sulfide resin. These resins can also be used as a blend of one or more types of polymers or polymer alloys.
열경화성 수지로는 예컨대 에폭시 수지, 멜라민 수지, 불포화 폴리에스테르 수지, 페놀 수지, 우레아 수지, 알키드 수지, 열경화성 폴리이미드 수지 등을 들 수 있다.Examples of thermosetting resins include epoxy resins, melamine resins, unsaturated polyester resins, phenol resins, urea resins, alkyd resins, and thermosetting polyimide resins.
수지 조성물로부터 형성한 고분자 성형품(성형체)의 형상은 평막형, 가루형, 구상 입자형, 파쇄 입자형, 괴상 연속체, 섬유형, 관형, 중공사형, 알갱이형, 판형, 다공질형 등 중 어느 형상일 수도 있다.The shape of the polymer molded article (molded body) formed from the resin composition may be any of the following shapes: flat film, powder, spherical particle, crushed particle, bulky continuum, fiber, tubular, hollow fiber, granular, plate, porous, etc. there is.
수지 조성물을 자외선 흡수 필터나 자외선 흡수막으로 사용하는 경우, 수지는 투명 수지인 것이 바람직하다.When the resin composition is used as an ultraviolet absorbing filter or ultraviolet absorbing film, the resin is preferably a transparent resin.
수지 조성물은 화합물(I)과 수지를 혼합함으로써 얻을 수 있다. 화합물(I)은 원하는 성능을 부여하기 위해 필요한 양을 함유하면 되고, 예컨대 수지 100 질량부에 대해 0.00001 내지 99 질량부 등으로 함유할 수 있다.The resin composition can be obtained by mixing compound (I) and resin. Compound (I) may be contained in the amount necessary to provide the desired performance, for example, 0.00001 to 99 parts by mass per 100 parts by mass of the resin.
수지 조성물은 필요에 따라 용제, 가교 촉매, 태키파이어, 가소제, 연화제, 염료, 안료, 무기 필러 등 기타 첨가물을 포함하고 있을 수 있다.The resin composition may contain other additives, such as solvents, crosslinking catalysts, tackifiers, plasticizers, softeners, dyes, pigments, inorganic fillers, etc., as needed.
조성물(1)에 사용되는 중합성 모노머로는 특별히 한정되지 않지만, 라디칼 중합성 모노머인 것이 바람직하고, 광라디칼 중합성 모노머인 것이 보다 바람직하고, (메타)아크릴레이트인 것이 더욱 바람직하다.The polymerizable monomer used in composition (1) is not particularly limited, but is preferably a radically polymerizable monomer, more preferably a radically photopolymerizable monomer, and even more preferably a (meth)acrylate.
(메타)아크릴레이트로는 분자 내에 1개의 (메타)아크릴로일옥시기를 포함하는 단관능 (메타)아크릴레이트 모노머, 분자 내에 2개의 (메타)아크릴로일옥시기를 포함하는 2관능 (메타)아크릴레이트 모노머, 분자 내에 3개 이상의 (메타)아크릴로일옥시기를 포함하는 다관능 (메타)아크릴레이트 모노머를 들 수 있다.(Meth)acrylates include monofunctional (meth)acrylate monomers containing one (meth)acryloyloxy group in the molecule, and bifunctional (meth)acrylates containing two (meth)acryloyloxy groups in the molecule. Examples include rate monomers and polyfunctional (meth)acrylate monomers containing three or more (meth)acryloyloxy groups in the molecule.
조성물(1)은 추가로 중합 개시제를 포함하는 것이 바람직하다. 중합성 모노머가 라디칼 중합성 모노머인 경우, 중합 개시제는 라디칼 중합 개시제인 것이 바람직하고, 광중합 개시제인 것이 보다 바람직하다.Composition (1) preferably further contains a polymerization initiator. When the polymerizable monomer is a radically polymerizable monomer, the polymerization initiator is preferably a radical polymerization initiator, and more preferably a photopolymerization initiator.
조성물(1)은 화합물(I)과 중합성 모노머를 혼합함으로써 얻을 수 있다. 화합물(I)은 원하는 성능을 부여하기 위해 필요한 양을 함유하면 되고, 예컨대 중합성 모노머 100 질량부에 대해 0.01 내지 20 질량부 등으로 함유할 수 있다.Composition (1) can be obtained by mixing compound (I) and a polymerizable monomer. Compound (I) may be contained in the amount necessary to provide the desired performance, for example, 0.01 to 20 parts by mass per 100 parts by mass of the polymerizable monomer.
조성물(1)은 필요에 따라 용제, 가교 촉매, 태키파이어, 가소제, 연화제, 염료, 안료, 무기 필러 등 기타 첨가물을 포함하고 있을 수 있다.Composition (1) may contain other additives, such as solvents, crosslinking catalysts, tackifiers, plasticizers, softeners, dyes, pigments, inorganic fillers, etc., as necessary.
<화합물(I)을 포함하는 층><Layer containing compound (I)>
본 발명은 화합물(I)을 포함하는 광학층을 포함한다. 화합물(I)을 포함하는 광학층은 예컨대 유기 EL 소자, 액정 셀 등의 표시 소자에 적층시켜 유기 EL 표시장치나 액정 표시장치 등의 화상 표시장치(FPD: 플랫 패널 디스플레이)에 사용할 수 있다. 광학층은 본 발명의 수지 조성물을 사용하여 형성할 수 있다. 본 발명의 수지 조성물을 화상 표시장치에 적용하는 경우, 본 발명의 수지 조성물로부터 형성되는 광학층은 필름층, 점착제층, 코팅층 등 중 어느 것에 적용해도 좋고, 점착제층 또는 코팅층인 것이 바람직하다.The present invention includes an optical layer containing compound (I). The optical layer containing compound (I) can be laminated on a display device such as an organic EL device or a liquid crystal cell and used in an image display device (FPD: flat panel display) such as an organic EL display device or a liquid crystal display device. The optical layer can be formed using the resin composition of the present invention. When applying the resin composition of the present invention to an image display device, the optical layer formed from the resin composition of the present invention may be applied to any of a film layer, an adhesive layer, or a coating layer, and is preferably an adhesive layer or a coating layer.
화합물(I)을 포함하는 광학층은 상술한 수지 조성물 또는 조성물(1)로부터 형성되는 것이 바람직하다.The optical layer containing compound (I) is preferably formed from the above-described resin composition or composition (1).
화합물(I)을 포함하는 광학층은 화합물(I)을 포함하는 광학층만으로 이루어질 수 있으며, 화합물(I)을 포함하는 층과 다른 층이 적층된 광학 적층체일 수도 있다. 다른 층으로는 예컨대 편광 필름(편광자), 위상차 필름, 열가소성 수지 필름, 파장 변환층 등을 들 수 있다. 광학 적층체가 본 발명의 광학층, 점접착제층, 편광 필름의 순서로 적층된 적층체라면, 본 발명의 광학층은 수지 조성물로부터 형성되는 광학층(광학 필름)인 것이 바람직하다. 광학 적층체가 본 발명의 광학층, 열가소성 수지 필름, 점접착제층, 편광 필름의 순서로 적층된 적층체라면, 본 발명의 광학층은 조성물(1)로부터 형성되는 광학층(코팅층)인 것이 바람직하다. 광학 적층체가 위상차 필름, 본 발명의 광학층, 위상차 필름의 순서로 적층된 적층체라면, 본 발명의 광학층은 수지 조성물로부터 형성되는 광학층(점착제층)인 것이 바람직하다. 광학 적층체가 파장 변환층을 포함하는 경우에는 파장 변환층보다 더 시인측에 본 발명의 광학층을 배치하는 것이 바람직하고, 본 발명의 광학층은 수지 조성물로부터 형성되는 광학층일 수도 있으며, 조성물(1)로부터 형성되는 광학층일 수도 있다.The optical layer containing compound (I) may be composed of only the optical layer containing compound (I), or may be an optical laminate in which a layer containing compound (I) and other layers are laminated. Other layers include, for example, a polarizing film (polarizer), retardation film, thermoplastic resin film, wavelength conversion layer, etc. If the optical laminate is a laminate in which the optical layer of the present invention, the adhesive layer, and the polarizing film are laminated in that order, it is preferable that the optical layer of the present invention is an optical layer (optical film) formed from a resin composition. If the optical laminate is a laminate in which the optical layer of the present invention, a thermoplastic resin film, an adhesive layer, and a polarizing film are laminated in that order, the optical layer of the present invention is preferably an optical layer (coating layer) formed from composition (1). . If the optical laminate is a laminate in which the retardation film, the optical layer of the present invention, and the retardation film are laminated in that order, the optical layer of the present invention is preferably an optical layer (adhesive layer) formed from a resin composition. When the optical laminate includes a wavelength conversion layer, it is preferable to arrange the optical layer of the present invention on the viewing side further than the wavelength conversion layer. The optical layer of the present invention may be an optical layer formed from a resin composition, and the composition (1 ) may also be an optical layer formed from.
<점착제 조성물><Adhesive composition>
본 발명의 조성물로부터 형성되는 층이 점착제층인 경우, 수지(A), 화합물(I), 가교제(B) 및 실란 화합물(C)을 포함하는 점착제 조성물(이하 점착제 조성물(1)이라 하는 경우가 있다.)로부터 형성된다. 점착제 조성물(1)은 추가로 라디칼 경화성 성분(D), 개시제(E), 화합물(I) 이외의 광 흡수 화합물(F)(이하 광 선택 흡수 화합물(F)이라 하는 경우가 있다.), 대전 방지제 등을 포함하고 있을 수 있고, 라디칼 경화성 성분(D), 개시제(E) 및 광 선택 흡수 화합물(F)로 이루어진 군에서 선택되는 적어도 하나를 포함하는 것이 바람직하다.When the layer formed from the composition of the present invention is a pressure-sensitive adhesive layer, the pressure-sensitive adhesive composition (hereinafter referred to as pressure-sensitive adhesive composition (1)) includes resin (A), compound (I), crosslinking agent (B), and silane compound (C). It is formed from). The adhesive composition (1) further includes a radical curable component (D), an initiator (E), a light absorption compound (F) other than compound (I) (hereinafter sometimes referred to as a light selective absorption compound (F)), and charging. It may contain an inhibitor, etc., and preferably contains at least one selected from the group consisting of a radical curing component (D), an initiator (E), and a light selective absorption compound (F).
수지(A)는 점착제 조성물에 사용되는 수지라면 특별히 한정되지 않는다. 수지(A)는 파장 300 nm 내지 파장 780 nm의 범위에서 극대 흡수를 나타내지 않는 것이 바람직하다.The resin (A) is not particularly limited as long as it is a resin used in the adhesive composition. It is preferable that the resin (A) does not exhibit maximum absorption in the wavelength range of 300 nm to 780 nm.
수지(A)는 유리 전이 온도(Tg)가 40 ℃ 이하인 수지인 것이 바람직하다. 수지(A)의 유리 전이 온도(Tg)는 20 ℃이하인 것이 보다 바람직하고, 10 ℃이하인 것이 더욱 바람직하고, 0 ℃이하인 것이 특히 바람직하다. 또한 수지(A)의 유리 전이 온도는 통상적으로 -80 ℃이상이며, -70 ℃이상인 것이 바람직하고, -60 ℃이상인 것이 보다 바람직하고, -55 ℃이상인 것이 더욱 바람직하고, -50 ℃이상인 것이 특히 바람직하다. 수지(A)의 유리 전이 온도가 40 ℃이하이면, 점착제 조성물(1)로부터 형성되는 점착제층의 피착체에 대한 밀착성 향상에 유리하다. 또한 수지(A)의 유리 전이 온도가 -80 ℃이상이면, 점착제 조성물(1)로부터 형성되는 점착제층의 내구성 향상에 유리하다. 또, 유리 전이 온도는 시차주사 열량계(DSC)에 의해 측정할 수 있다.The resin (A) is preferably a resin having a glass transition temperature (Tg) of 40°C or lower. The glass transition temperature (Tg) of the resin (A) is more preferably 20°C or lower, further preferably 10°C or lower, and particularly preferably 0°C or lower. In addition, the glass transition temperature of the resin (A) is usually -80 ℃ or higher, preferably -70 ℃ or higher, more preferably -60 ℃ or higher, even more preferably -55 ℃ or higher, and especially -50 ℃ or higher. desirable. If the glass transition temperature of the resin (A) is 40°C or lower, it is advantageous for improving the adhesion of the adhesive layer formed from the adhesive composition (1) to the adherend. Additionally, if the glass transition temperature of the resin (A) is -80°C or higher, it is advantageous for improving the durability of the adhesive layer formed from the adhesive composition (1). Additionally, the glass transition temperature can be measured by differential scanning calorimetry (DSC).
수지(A)로는 (메타)아크릴계 수지, 실리콘계 수지, 고무계 수지, 우레탄계 수지 등을 들 수 있고, (메타)아크릴계 수지인 것이 바람직하다.Resins (A) include (meth)acrylic resins, silicone resins, rubber resins, urethane resins, etc., and are preferably (meth)acrylic resins.
(메타)아크릴계 수지로는 (메타)아크릴산에스테르 유래의 구성 단위를 주 성분(바람직하게 50 질량% 이상 포함한다)으로 하는 중합체인 것이 바람직하다. (메타)아크릴계 수지는 1종 이상의 (메타)아크릴산에스테르 이외의 단량체에서 유래된 구성 단위(예컨대 수산기, 카복실기, 아미노기 등의 극성 관능기를 갖는 단량체에서 유래된 구성 단위)를 포함할 수도 있다.The (meth)acrylic resin is preferably a polymer containing a structural unit derived from (meth)acrylic acid ester as a main component (preferably containing 50% by mass or more). The (meth)acrylic resin may contain structural units derived from monomers other than one or more types of (meth)acrylic acid esters (e.g., structural units derived from monomers having polar functional groups such as hydroxyl groups, carboxyl groups, and amino groups).
수지(A)의 함유량은 점착제 조성물(1)의 고형분 100 질량% 중, 통상적으로 50 질량% 내지 99.9 질량%이며, 바람직하게 60 질량% 내지 95 질량%이며, 보다 바람직하게 70 질량% 내지 90 질량%이다.The content of the resin (A) is usually 50% by mass to 99.9% by mass, preferably 60% by mass to 95% by mass, and more preferably 70% by mass to 90% by mass, based on 100% by mass of solid content of the adhesive composition (1). %am.
화합물(I)의 함유량은 수지(A) 100 질량부에 대해 통상적으로 0.01 내지 20 질량부이며, 바람직하게 0.1 내지 20 질량부이며, 보다 바람직하게 0.2 내지 10 질량부이며, 특히 바람직하게 0.5 내지 5 질량부이다.The content of compound (I) is usually 0.01 to 20 parts by mass, preferably 0.1 to 20 parts by mass, more preferably 0.2 to 10 parts by mass, and especially preferably 0.5 to 5 parts by mass, based on 100 parts by mass of resin (A). It is the mass part.
가교제(B)로는 이소시아네이트계 가교제, 에폭시계 가교제, 아지리딘계 가교제, 금속 킬레이트계 가교제 등을 들 수 있고, 특히 점착제 조성물의 포트 라이프 및 점착제층의 내구성, 가교 속도 등의 관점에서 이소시아네이트계 가교제인 것이 바람직하다.Examples of the crosslinking agent (B) include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, aziridine-based crosslinking agents, and metal chelate-based crosslinking agents. In particular, from the viewpoint of pot life of the adhesive composition, durability of the adhesive layer, and crosslinking speed, the isocyanate-based crosslinking agent is preferred. desirable.
가교제(B)의 함유량은 수지(A) 100 질량부에 대해 통상적으로 0.01 내지 25 질량부이며, 바람직하게 0.1 내지 15 질량부이며, 보다 바람직하게 0.15 내지 7 질량부이며, 더욱 바람직하게 0.2 내지 5 질량부이며, 특히 바람직하게 0.25 내지 2 질량부이다.The content of the crosslinking agent (B) is usually 0.01 to 25 parts by mass, preferably 0.1 to 15 parts by mass, more preferably 0.15 to 7 parts by mass, and even more preferably 0.2 to 5 parts by mass, based on 100 parts by mass of the resin (A). It is a mass part, and is especially preferably 0.25 to 2 mass parts.
실란 화합물(C)로는 예컨대 비닐트리메톡시실란, 비닐트리에톡시실란, 비닐트리스(2-메톡시에톡시)실란, 3-글리시독시프로필트리메톡시실란, 3-글리시독시프로필트리에톡시실란, 3-글리시독시프로필메틸디메톡시실란, 3-글리시독시프로필에톡시디메틸실란, 2-(3,4-에폭시시클로헥실)에틸트리메톡시실란, 3-클로로프로필메틸디메톡시실란, 3-클로로프로필트리메톡시실란, 3-메타크릴로일옥시프로필트리메톡시실란, 3-메르캅토프로필트리메톡시실란 등을 들 수 있다.Silane compounds (C) include, for example, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris(2-methoxyethoxy)silane, 3-glycidoxypropyltrimethoxysilane, and 3-glycidoxypropyltriene. Toxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylethoxydimethylsilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-chloropropylmethyldimethoxysilane , 3-chloropropyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, etc.
실란 화합물(C)은 실리콘 올리고머일 수도 있다.The silane compound (C) may be a silicon oligomer.
실란 화합물(C)의 함유량은 수지(A) 100 질량부에 대해 통상적으로 0.01 내지 20 질량부이며, 바람직하게 0.1 내지 10 질량부이며, 보다 바람직하게 0.15 내지 7 질량부이며, 더욱 바람직하게 0.2 내지 5 질량부이며, 특히 바람직하게 0.25 내지 2 질량부이다.The content of the silane compound (C) is usually 0.01 to 20 parts by mass, preferably 0.1 to 10 parts by mass, more preferably 0.15 to 7 parts by mass, and still more preferably 0.2 to 7 parts by mass, based on 100 parts by mass of the resin (A). It is 5 parts by mass, and particularly preferably 0.25 to 2 parts by mass.
라디칼 경화성 성분(D)으로는 라디칼 중합 반응에 의해 경화하는 화합물 또는 올리고머 등의 라디칼 경화성 성분을 들 수 있다.The radically curable component (D) includes a radically curable component such as a compound or oligomer that hardens by a radical polymerization reaction.
라디칼 중합성 성분(D)으로는 (메타)아크릴레이트계 화합물, 스티렌계 화합물, 비닐계 화합물 등을 들 수 있다.Examples of the radically polymerizable component (D) include (meth)acrylate-based compounds, styrene-based compounds, and vinyl-based compounds.
점착제 조성물(1)은 라디칼 경화성 성분(D)을 2종 이상 포함하고 있을 수 있다.The adhesive composition (1) may contain two or more types of radically curable components (D).
(메타)아크릴레이트계 화합물로는 분자 내에 적어도 1개의 (메타)아크릴로일옥시기를 갖는 (메타)아크릴레이트 모노머, (메타)아크릴아미드 모노머, 및 분자 내에 적어도 2개의 (메타)아크릴로일기를 갖는 (메타)아크릴 올리고머 등의 (메타)아크릴로일기 함유 화합물을 들 수 있다. (메타)아크릴 올리고머는 바람직하게 분자 내에 적어도 2개의 (메타)아크릴로일옥시기를 갖는 (메타)아크릴레이트 올리고머이다. (메타)아크릴레이트계 화합물은 1종만을 단독으로 사용할 수 있으며 2종 이상을 병용할 수도 있다.(meth)acrylate-based compounds include (meth)acrylate monomers having at least one (meth)acryloyloxy group in the molecule, (meth)acrylamide monomers, and at least two (meth)acryloyl groups in the molecule. (meth)acryloyl group-containing compounds, such as (meth)acrylic oligomers, are included. The (meth)acrylic oligomer is preferably a (meth)acrylate oligomer having at least two (meth)acryloyloxy groups in the molecule. One type of (meth)acrylate-based compound can be used independently, or two or more types can be used in combination.
(메타)아크릴레이트 모노머로는 분자 내에 1개의 (메타)아크릴로일옥시기를 갖는 단관능 (메타)아크릴레이트 모노머, 분자 내에 2개의 (메타)아크릴로일옥시기를 갖는 2관능 (메타)아크릴레이트 모노머, 분자 내에 3개 이상의 (메타)아크릴로일옥시기를 갖는 다관능 (메타)아크릴레이트 모노머를 들 수 있다.(meth)acrylate monomers include monofunctional (meth)acrylate monomers with one (meth)acryloyloxy group in the molecule, and bifunctional (meth)acrylate monomers with two (meth)acryloyloxy groups in the molecule. Monomers include polyfunctional (meth)acrylate monomers having three or more (meth)acryloyloxy groups in the molecule.
(메타)아크릴레이트 화합물인 것이 바람직하고, 다관능 (메타)아크릴레이트 화합물인 것이 보다 바람직하다. 다관능 (메타)아크릴레이트 화합물은 3관능 이상인 것이 바람직하다.It is preferable that it is a (meth)acrylate compound, and it is more preferable that it is a polyfunctional (meth)acrylate compound. It is preferable that the polyfunctional (meth)acrylate compound is trifunctional or more.
라디칼 경화성 성분(D)의 함유량은 수지(A) 100 질량부에 대해 통상적으로 0.5 내지 100 질량부이며, 1 내지 70 질량부인 것이 바람직하고, 3 내지 50 질량부인 것이 보다 바람직하고, 5 내지 30 질량부인 것이 더욱 바람직하고, 7.5 내지 25 질량부인 것이 특히 바람직하다.The content of the radical curable component (D) is usually 0.5 to 100 parts by mass, preferably 1 to 70 parts by mass, more preferably 3 to 50 parts by mass, and 5 to 30 parts by mass, relative to 100 parts by mass of the resin (A). It is more preferable that it is negligible, and it is especially preferable that it is 7.5 to 25 parts by mass.
개시제(E)는 열의 에너지를 흡수함으로써 중합 반응을 일으키는 화합물(열중합 개시제), 빛의 에너지를 흡수함으로써 중합 반응을 일으키는 화합물(광중합 개시제) 중 어느 것이라도 좋다. 또, 여기서 빛이란 가시광선, 자외선, X선, 또는 전자선과 같은 활성 에너지선인 것이 바람직하다.The initiator (E) may be either a compound that causes a polymerization reaction by absorbing heat energy (thermal polymerization initiator) or a compound that causes a polymerization reaction by absorbing light energy (photopolymerization initiator). In addition, the light here is preferably active energy rays such as visible rays, ultraviolet rays, X-rays, or electron beams.
열중합 개시제로는 가열 등에 의해 라디칼을 발생하는 화합물(열라디칼 발생제), 가열 등에 의해 산을 발생하는 화합물(열산 발생제), 가열 등에 의해 염기를 발생하는 화합물(열 염기 발생제) 등을 들 수 있다.Thermal polymerization initiators include compounds that generate radicals by heating, etc. (thermal radical generators), compounds that generate acids by heating, etc. (thermal acid generators), and compounds that generate bases by heating, etc. (thermal base generators). I can hear it.
광중합 개시제로는 빛의 에너지를 흡수함으로써 라디칼을 발생하는 화합물(광라디칼 발생제), 빛의 에너지를 흡수함으로써 산을 발생하는 화합물(광산 발생제), 빛의 에너지를 흡수함으로써 염기를 발생하는 화합물(광 염기 발생제) 등을 들 수 있다.Photopolymerization initiators include compounds that generate radicals by absorbing light energy (photoradical generators), compounds that generate acids by absorbing light energy (photoacid generators), and compounds that generate bases by absorbing light energy. (Photobase generator) etc. are mentioned.
개시제(E)는 상술한 라디칼 경화성 성분(D)의 중합 반응에 적합한 것을 선택하는 것이 바람직하고, 라디칼 중합 개시제인 것이 바람직하고, 광라디칼 중합 개시제인 것이 보다 바람직하다.The initiator (E) is preferably selected to be suitable for the polymerization reaction of the radically curable component (D), and is preferably a radical polymerization initiator, and more preferably a radical photopolymerization initiator.
라디칼 중합 개시제는 예컨대 알킬페논 화합물, 벤조인 화합물, 벤조페논 화합물, 옥심에스테르 화합물, 포스핀 화합물 등을 들 수 있다. 라디칼 중합 개시제는 광라디칼 중합 개시제인 것이 바람직하고, 중합 반응의 반응성 관점에서 옥심에스테르계 광라디칼 중합 개시제인 것이 보다 바람직하다. 옥심에스테르계 광라디칼 중합 개시제를 사용함으로써, 조도 또는 광량이 약한 경화 조건이라도 라디칼 경화 성분(D)의 반응률을 높일 수 있다.Radical polymerization initiators include, for example, alkylphenone compounds, benzoin compounds, benzophenone compounds, oxime ester compounds, and phosphine compounds. The radical polymerization initiator is preferably a radical photopolymerization initiator, and is more preferably an oxime ester-based radical photopolymerization initiator from the viewpoint of the reactivity of the polymerization reaction. By using an oxime ester-based radical photopolymerization initiator, the reaction rate of the radical curing component (D) can be increased even under curing conditions with low illuminance or light amount.
개시제(E)의 함유량은 수지(A) 100 질량부에 대해 통상적으로 0.01 내지 20 질량부이며, 0.3 내지 10 질량부인 것이 바람직하고, 0.5 내지 5 질량부인 것이 보다 바람직하고, 0.75 내지 4 질량부인 것이 더욱 바람직하고, 특히 바람직하게 1 내지 3 질량부이다.The content of the initiator (E) is usually 0.01 to 20 parts by mass, preferably 0.3 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, and 0.75 to 4 parts by mass with respect to 100 parts by mass of the resin (A). It is more preferable, and particularly preferably 1 to 3 parts by mass.
광 선택 흡수 화합물(F)은 화합물(I) 이외의 광흡수성 화합물이며, 예컨대 파장 250 nm 내지 파장 380 nm (바람직하게 파장 250 nm 이상 파장 360 nm 미만)의 빛을 흡수하는 화합물(자외선 흡수제)이나, 파장 380 내지 파장 780 nm를 흡수하는 화합물(색소)이나, 파장 780 nm 내지 파장 1500 nm를 흡수하는 화합물(적외선 흡수제)이다.The light selective absorption compound (F) is a light-absorbing compound other than compound (I), for example, a compound (ultraviolet absorber) that absorbs light with a wavelength of 250 nm to 380 nm (preferably a wavelength of 250 nm or more and less than 360 nm). , a compound (pigment) that absorbs a wavelength of 380 nm to 780 nm, or a compound (infrared absorber) that absorbs a wavelength of 780 nm to 1500 nm.
자외선 흡수제는 파장 250 nm 내지 파장 380 nm의 빛을 흡수하는 화합물이면 그 구조는 특별히 한정되지 않지만, 벤조트리아졸계 화합물, 벤조페논계 화합물, 트리아진계 화합물, 살리실산계 화합물, 시아노아크릴레이트계 화합물, 벤조옥사진계 화합물 등의 화합물 등이 바람직하다.The structure of the ultraviolet absorber is not particularly limited as long as it is a compound that absorbs light with a wavelength of 250 nm to 380 nm, but may include benzotriazole-based compounds, benzophenone-based compounds, triazine-based compounds, salicylic acid-based compounds, cyanoacrylate-based compounds, Compounds such as benzoxazine-based compounds are preferable.
광 선택 흡수 화합물(F)의 함유량은 수지(A) 100 질량부에 대해 통상적으로 0.1 내지 50 질량부이며, 바람직하게 0.2 내지 40 질량부이며, 보다 바람직하게 0.5 내지 30 질량부이며, 더욱 바람직하게 1 내지 25 질량부이며, 특히 바람직하게 2 내지 20 질량부이다.The content of the light selective absorption compound (F) is usually 0.1 to 50 parts by mass, preferably 0.2 to 40 parts by mass, more preferably 0.5 to 30 parts by mass, and even more preferably, based on 100 parts by mass of the resin (A). It is 1 to 25 parts by mass, particularly preferably 2 to 20 parts by mass.
<화합물(I)에 의해 염색된 염색물><Dyeing material dyed with compound (I)>
본 발명은 화합물(I)에 의해 염색된 염색물(예컨대 섬유품, 필름, 수지 등)을 포함한다. 화합물(I)에 의한 염색은 예컨대 화합물(I)을 용제에 용해시킨 용해액에 섬유, 필름, 수지 등의 물품을 침지시킴으로써 실시된다.The present invention includes dyed materials (such as textiles, films, resins, etc.) dyed with compound (I). Dyeing with compound (I) is carried out, for example, by immersing articles such as fibers, films, and resins in a solution obtained by dissolving compound (I) in a solvent.
발명의 실시를 위한 형태Forms for practicing the invention
이하 실시예 및 비교예에 의해 본 발명을 더욱 상세하게 설명한다. 실시예 및 비교예 중의 "%" 및 "부"는 특별히 명기하지 않는 한, "질량%" 및 "질량부"이다.The present invention will be described in more detail below through examples and comparative examples. “%” and “part” in examples and comparative examples are “% by mass” and “part by mass” unless otherwise specified.
실시예 1: 식 (1)로 표시되는 화합물의 합성Example 1: Synthesis of the compound represented by formula (1)
[화학식 29][Formula 29]
딤로 냉각관 및 온도계를 설치한 100 mL-4구 플라스크 내를 질소 분위기로 하고, 식 (m)으로 표시되는 화합물(4,4a,5,6-테트라히드로-7-히드록시-2(3H)-나프탈렌온) 3부, 디클로로메탄 30부, 인돌린 4.8부, 질산비스무트 0.9부를 혼합하고, 얻어진 혼합물을 온도 25 ℃에서 40 시간 교반하였다. 얻어진 혼합물로부터 용매를 증류제거한 후, 염산 및 아세트산에틸로 정제하여 식 (1)로 표시되는 화합물 1.3부를 얻었다.A 100 mL-4-necked flask equipped with a Dimro cooling pipe and a thermometer was placed in a nitrogen atmosphere, and the compound represented by formula (m) (4,4a,5,6-tetrahydro-7-hydroxy-2(3H) -naphthalenone), 30 parts of dichloromethane, 4.8 parts of indoline, and 0.9 parts of bismuth nitrate were mixed, and the resulting mixture was stirred at a temperature of 25°C for 40 hours. After distilling off the solvent from the obtained mixture, the mixture was purified with hydrochloric acid and ethyl acetate to obtain 1.3 parts of the compound represented by formula (1).
LC-MS 측정 및 1H-NMR 해석을 수행하여 식 (1)로 표시되는 화합물이 생성된 것을 확인하였다. 또한 에너지 분산형 X선 분광법(SEM-EDX 분석)에 의해 클로라이드 음이온의 존재를 확인하였다.LC-MS measurement and 1 H-NMR analysis were performed to confirm that the compound represented by formula (1) was produced. Additionally, the presence of chloride anion was confirmed by energy dispersive X-ray spectroscopy (SEM-EDX analysis).
1H-NMR(중디메틸설폭시드)δ: 7.18 ~ 7.63 (m, 8H), 6.39 (m, 2H), 4.21 ~ 4.40 (m, 4H), 3.64 ~ 4.05 (m, 2H), 3.11 ~ 3.35 (m, 4H), 2.50 ~ 2.73 (m, 2H), 2.09 (m, 2H), 1.56 ~ 1.59 (m, 2H), 0.90 (m, 1H) 1 H-NMR (dimethyl sulfoxide) δ: 7.18 ~ 7.63 (m, 8H), 6.39 (m, 2H), 4.21 ~ 4.40 (m, 4H), 3.64 ~ 4.05 (m, 2H), 3.11 ~ 3.35 ( m, 4H), 2.50 ~ 2.73 (m, 2H), 2.09 (m, 2H), 1.56 ~ 1.59 (m, 2H), 0.90 (m, 1H)
LC-MS; [M] = 367.2LC-MS; [M] = 367.2
<극대 흡수 파장 및 그램 흡광 계수 ε 측정><Measurement of maximum absorption wavelength and gram extinction coefficient ε>
얻어진 식 (1)로 표시되는 화합물의 2-부탄온 용액(0.006 g/L)을 1 cm의 석영 셀에 넣고, 석영 셀을 분광 광도계 UV-2450(가부시키가이샤 시마즈 세이사쿠쇼제)에 세팅하여 더블빔법에 의해 1 nm 스텝별로 300 내지 800 nm의 파장 범위의 흡광도를 측정하였다. 얻어진 흡광도의 값과, 용액 중의 식 (1)로 표시되는 화합물의 농도, 석영 셀의 광로 길이로부터 파장별 그램 흡광 계수를 산출하였다.The obtained 2-butanone solution (0.006 g/L) of the compound represented by formula (1) was placed in a 1 cm quartz cell, and the quartz cell was set to a spectrophotometer UV-2450 (manufactured by Shimazu Seisakusho Co., Ltd.). Absorbance was measured in the wavelength range of 300 to 800 nm in 1 nm steps by the double beam method. The gram extinction coefficient for each wavelength was calculated from the obtained absorbance value, the concentration of the compound represented by formula (1) in the solution, and the optical path length of the quartz cell.
ε(λ) = A(λ)/CLε(λ) = A(λ)/CL
[식 중, ε(λ)는 파장 λ nm에서의 식 (1)로 표시되는 화합물의 그램 흡광 계수(L/(g·cm))를 나타내고, A(λ)는 파장 λ nm에서의 흡광도를 나타내고, C는 농도(g/L)를 나타내고, L은 석영 셀의 광로 길이(m)를 나타낸다.][In the formula, ε(λ) represents the gram extinction coefficient (L/(g·cm)) of the compound represented by equation (1) at the wavelength λ nm, and A(λ) represents the absorbance at the wavelength λ nm. , C represents the concentration (g/L), and L represents the optical path length (m) of the quartz cell.]
얻어진 식 (1)로 표시되는 화합물의 극대 흡수 파장은 523 nm이었다. 얻어진 식 (1)로 표시되는 화합물의 극대 흡수 파장에서의 그램 흡광 계수 ε(λmax)는 309 L/(g·cm)이었다.The maximum absorption wavelength of the obtained compound represented by formula (1) was 523 nm. The gram extinction coefficient ε(λmax) at the maximum absorption wavelength of the obtained compound represented by formula (1) was 309 L/(g·cm).
<화합물의 반값 전폭의 측정><Measurement of the full width at half maximum of the compound>
얻어진 식 (1)로 표시되는 화합물의 2-부탄온 용액(농도: 0.006 g/L)을 1 cm의 석영 셀에 넣고, 석영 셀을 분광 광도계 UV-2450(가부시키가이샤 시마즈 세이사쿠쇼제)에 세팅하여 더블빔법에 의해 1 nm 스텝별로 300 내지 800 nm의 파장 범위의 흡광도를 측정하였다. 극대 흡수 파장의 흡광도의 절반인 흡광도가 되는 2점의 파장을 확인하였다. 2점의 파장 중, 장파측 파장에서 단파측 파장을 빼서 반값 전폭으로 하였다. 식 (1)로 표시되는 화합물의 반값 전폭은 44 nm이었다.The obtained 2-butanone solution (concentration: 0.006 g/L) of the compound represented by formula (1) was placed in a 1 cm quartz cell, and the quartz cell was subjected to a spectrophotometer UV-2450 (manufactured by Shimazu Seisakusho Co., Ltd.). After setting, the absorbance was measured in the wavelength range of 300 to 800 nm in 1 nm steps using the double beam method. Two wavelengths were identified where the absorbance was half that of the maximum absorption wavelength. Among the two wavelengths, the short-wave wavelength was subtracted from the long-wave wavelength to obtain the full width at half maximum. The full width at half maximum of the compound represented by formula (1) was 44 nm.
실시예 2: 식 (2)로 표시되는 화합물의 합성Example 2: Synthesis of the compound represented by formula (2)
[화학식 30][Formula 30]
딤로 냉각관 및 온도계를 설치한 100 mL-4구 플라스크 내를 질소 분위기로 하고, 식 (m)으로 표시되는 화합물(4,4a,5,6-테트라히드로-7-히드록시-2(3H)-나프탈렌온) 1부, 디클로로메탄 20부, 메틸인돌린 3.2부, 질산비스무트 1.5부를 혼합하고, 얻어진 혼합물을 온도 25 ℃에서 40 시간 교반하였다. 얻어진 혼합물로부터 용매를 증류제거한 후, 염산 및 아세트산에틸로 정제하여 식 (2)로 표시되는 화합물 1.4부를 얻었다.A 100 mL-4-necked flask equipped with a Dimro cooling pipe and a thermometer was placed in a nitrogen atmosphere, and the compound represented by formula (m) (4,4a,5,6-tetrahydro-7-hydroxy-2(3H) -naphthalenone), 20 parts of dichloromethane, 3.2 parts of methylindoline, and 1.5 parts of bismuth nitrate were mixed, and the resulting mixture was stirred at a temperature of 25°C for 40 hours. After distilling off the solvent from the obtained mixture, the mixture was purified with hydrochloric acid and ethyl acetate to obtain 1.4 parts of the compound represented by formula (2).
LC-MS 측정 및 1H-NMR 해석을 수행하여 식 (2)로 표시되는 화합물이 생성된 것을 확인하였다. 또한 에너지 분산형 X선 분광법(SEM-EDX 분석)에 의해 클로라이드 음이온의 존재를 확인하였다. 추가로 상술한 바와 동일하게 하여 극대 흡수 파장, 그램 흡광 계수 및 반값 전폭을 측정한 바, 식 (2)로 표시되는 화합물의 극대 흡수 파장은 530 nm이며, 극대 흡수 파장에서의 그램 흡광 계수 ε(λmax)는 237 L/(g·cm), 반값 전폭은 54 nm이었다.LC-MS measurement and 1 H-NMR analysis were performed to confirm that the compound represented by formula (2) was produced. Additionally, the presence of chloride anion was confirmed by energy dispersive X-ray spectroscopy (SEM-EDX analysis). Additionally, the maximum absorption wavelength, gram extinction coefficient, and full width at half maximum were measured in the same manner as described above. As a result, the maximum absorption wavelength of the compound represented by equation (2) was 530 nm, and the gram extinction coefficient ε( λmax) was 237 L/(g·cm), and the full width at half maximum was 54 nm.
1H-NMR(중디메틸설폭시드)δ: 1.58 (m, 2H), 2, 31 (m, 2H), 2.50 (s, 6H), 2.66 (m, 1H), 3.14 ~ 3.35 (m, 8H), 4.20 ~ 4.30 (m, 4H), 6.31 (m, 2H), 7.09 ~ 7.45 (m, 6H) 1 H-NMR (dimethyl sulfoxide) δ: 1.58 (m, 2H), 2, 31 (m, 2H), 2.50 (s, 6H), 2.66 (m, 1H), 3.14 ~ 3.35 (m, 8H) , 4.20 ~ 4.30 (m, 4H), 6.31 (m, 2H), 7.09 ~ 7.45 (m, 6H)
LC-MS; [M] = 395.5LC-MS; [M] = 395.5
실시예 3: 식 (3)으로 표시되는 화합물의 합성Example 3: Synthesis of the compound represented by formula (3)
[화학식 31][Formula 31]
딤로 냉각관 및 온도계를 설치한 100 mL-4구 플라스크 내를 질소 분위기로 하고, 식 (m)으로 표시되는 화합물(4,4a,5,6-테트라히드로-7-히드록시-2(3H)-나프탈렌온) 3부, 탈수 아세토니트릴 30부, 니트로인돌린 6.6부를 혼합하고, 얻어진 혼합물을 온도 80 ℃에서 8 시간 교반하였다. 얻어진 혼합물로부터 용매를 증류제거한 후, 정제하여 식 (m-A)로 표시되는 화합물 1.7부를 얻었다.A 100 mL-4-necked flask equipped with a Dimro cooling pipe and a thermometer was placed in a nitrogen atmosphere, and the compound represented by formula (m) (4,4a,5,6-tetrahydro-7-hydroxy-2(3H) -naphthalenone), 30 parts of dehydrated acetonitrile, and 6.6 parts of nitroindoline were mixed, and the resulting mixture was stirred at a temperature of 80°C for 8 hours. After distilling off the solvent from the obtained mixture, it was purified to obtain 1.7 parts of the compound represented by the formula (m-A).
[화학식 32][Formula 32]
딤로 냉각관 및 온도계를 설치한 100 mL-4구 플라스크 내를 질소 분위기로 하고, 식 (m-A)로 표시되는 화합물 0.5부, 탈수 아세토니트릴 5부, 디이소프로필에틸아민 0.3부를 가하여 빙욕 교반하였다. 얻어진 혼합물에 트리플루오로메탄설폰산 무수물 0.6부를 가하여 15분 동안 빙욕교반하고, 니트로인돌린 0.27부를 가하여 빙욕 교반을 1 시간 하였다. 얻어진 혼합물로부터 용매를 증류제거한 후, 염산 및 아세트산에틸로 정제하여 식 (3)으로 표시되는 화합물 0.6부를 얻었다.A 100 mL-4-neck flask equipped with a Dimro cooling pipe and a thermometer was placed in a nitrogen atmosphere, 0.5 parts of the compound represented by the formula (m-A), 5 parts of dehydrated acetonitrile, and 0.3 parts of diisopropylethylamine were added and stirred in an ice bath. To the resulting mixture, 0.6 parts of trifluoromethanesulfonic anhydride was added and stirred in an ice bath for 15 minutes. 0.27 parts of nitroindoline was added and the mixture was stirred in an ice bath for 1 hour. After distilling off the solvent from the obtained mixture, the mixture was purified with hydrochloric acid and ethyl acetate to obtain 0.6 parts of the compound represented by formula (3).
1H-NMR 해석을 수행하여 식 (3)으로 표시되는 화합물이 생성된 것을 확인하였다. 또한 에너지 분산형 X선 분광법(SEM-EDX 분석)에 의해 클로라이드 음이온의 존재를 확인하였다. 추가로 상술한 바와 동일하게 하여 극대 흡수 파장, 그램 흡광 계수 및 반값 전폭을 측정한 바, 식 (3)으로 표시되는 화합물의 극대 흡수 파장은 521 nm이며, 극대 흡수 파장에서의 그램 흡광 계수 ε(λmax)는 192 L/(g·cm), 반값 전폭은 52 nm이었다. 1 H-NMR analysis was performed to confirm that the compound represented by formula (3) was produced. Additionally, the presence of chloride anion was confirmed by energy dispersive X-ray spectroscopy (SEM-EDX analysis). Additionally, the maximum absorption wavelength, gram extinction coefficient, and full width at half maximum were measured in the same manner as described above. As a result, the maximum absorption wavelength of the compound represented by equation (3) was 521 nm, and the gram extinction coefficient ε( λmax) was 192 L/(g·cm), and the full width at half maximum was 52 nm.
1H-NMR(중디메틸설폭시드)δ: 1.58 (m, 2H), 2.08 (m, 2H), 2.73 (m, 1H), 3.30 (m, 2H), 4.30 (m, 4H), 6.34 (m, 4H), 7.27 ~ 7.64 (m, 6H), 8.00 ~ 8.11 (m, 2H) 1 H-NMR (dimethyl sulfoxide) δ: 1.58 (m, 2H), 2.08 (m, 2H), 2.73 (m, 1H), 3.30 (m, 2H), 4.30 (m, 4H), 6.34 (m) , 4H), 7.27 ~ 7.64 (m, 6H), 8.00 ~ 8.11 (m, 2H)
실시예 4: 식 (4)로 표시되는 화합물의 합성Example 4: Synthesis of the compound represented by formula (4)
[화학식 33][Formula 33]
딤로 냉각관 및 온도계를 설치한 100 mL-4구 플라스크 내를 질소 분위기로 하고, 식 (m)으로 표시되는 화합물 2부, 탈수 아세토니트릴 40부, 디이소프로필에틸아민 1.9부를 가하여 빙욕 교반하였다. 트리플루오로메탄설폰산 무수물 4.1부를 가하여 15분 동안 빙욕교반하였다. 얻어진 혼합물에 식 (b1)로 표시되는 화합물 5.2부를 가하여 온도 60 ℃에서 2 시간 교반하였다. 얻어진 혼합물로부터 용매를 증류제거한 후, 염산 및 아세트산에틸로 정제하여 식 (4)로 표시되는 화합물 2부를 얻었다.A 100 mL-4-neck flask equipped with a Dimro cooling pipe and a thermometer was placed in a nitrogen atmosphere, 2 parts of the compound represented by formula (m), 40 parts of dehydrated acetonitrile, and 1.9 parts of diisopropylethylamine were added and stirred in an ice bath. 4.1 parts of trifluoromethanesulfonic anhydride were added and stirred in an ice bath for 15 minutes. 5.2 parts of the compound represented by formula (b1) was added to the obtained mixture and stirred at a temperature of 60°C for 2 hours. After distilling off the solvent from the obtained mixture, the mixture was purified with hydrochloric acid and ethyl acetate to obtain 2 parts of the compound represented by formula (4).
LC-MS 측정 및 1H-NMR 해석을 수행하여 식 (4)로 표시되는 화합물이 생성된 것을 확인하였다. 또한 에너지 분산형 X선 분광법(SEM-EDX 분석)에 의해 클로라이드 음이온의 존재를 확인하였다. 추가로 상술한 바와 동일하게 하여 극대 흡수 파장, 그램 흡광 계수 및 반값 전폭을 측정한 바, 식 (4)로 표시되는 화합물의 극대 흡수 파장은 459 nm이며, 극대 흡수 파장에서의 그램 흡광 계수 ε(λmax)는 100 L/(g·cm)이며, 반값 전폭은 70 nm이었다.LC-MS measurement and 1 H-NMR analysis were performed to confirm that the compound represented by formula (4) was produced. Additionally, the presence of chloride anion was confirmed by energy dispersive X-ray spectroscopy (SEM-EDX analysis). Additionally, the maximum absorption wavelength, gram extinction coefficient, and full width at half maximum were measured in the same manner as described above. As a result, the maximum absorption wavelength of the compound represented by equation (4) was 459 nm, and the gram extinction coefficient ε( λmax) was 100 L/(g·cm), and the full width at half maximum was 70 nm.
1H-NMR(중디메틸설폭시드)δ: 11.2 (m, 2H), 7.44 ~ 7.95 (12H), 7.44 ~ 7.46 (m, 4H), 6.09 (s, 2H), 2.69 ~ 3.00 (m, 5H), 2.50 (m, 2H), 1.56 ~ 1.59 (m, 2H) 1 H-NMR (dimethyl sulfoxide) δ: 11.2 (m, 2H), 7.44 ~ 7.95 (12H), 7.44 ~ 7.46 (m, 4H), 6.09 (s, 2H), 2.69 ~ 3.00 (m, 5H) , 2.50 (m, 2H), 1.56 ~ 1.59 (m, 2H)
LC-MS; [M] = 552.5LC-MS; [M] = 552.5
실시예 5: 식 (5)로 표시되는 화합물의 합성Example 5: Synthesis of the compound represented by formula (5)
[화학식 34][Formula 34]
딤로 냉각관 및 온도계를 설치한 100 mL-4구 플라스크 내를 질소 분위기로 하고, 식 (m)으로 표시되는 화합물 0.2부, 탈수 아세토니트릴 4부, 디이소프로필에틸아민 0.2부를 가하여 빙욕 교반하였다. 얻어진 혼합물에 트리플루오로메탄설폰산 무수물 0.4부를 가하여 15분 동안 빙욕 교반하였다. 얻어진 혼합물에 식 (b2)로 표시되는 화합물 0.9부를 가하여 온도 60 ℃에서 2 시간 교반하였다. 얻어진 혼합물로부터 용매를 증류제거한 후, 염산 및 아세트산에틸로 정제하여 식 (5)로 표시되는 화합물 0.3부를 얻었다.A 100 mL-4-necked flask equipped with a Dimro cooling pipe and a thermometer was placed in a nitrogen atmosphere, and 0.2 parts of the compound represented by the formula (m), 4 parts of dehydrated acetonitrile, and 0.2 parts of diisopropylethylamine were added and stirred in an ice bath. 0.4 parts of trifluoromethanesulfonic anhydride was added to the resulting mixture and stirred in an ice bath for 15 minutes. 0.9 parts of the compound represented by formula (b2) was added to the obtained mixture and stirred at a temperature of 60°C for 2 hours. After distilling off the solvent from the obtained mixture, the mixture was purified with hydrochloric acid and ethyl acetate to obtain 0.3 part of the compound represented by formula (5).
1H-NMR 해석을 수행하여 식 (5)로 표시되는 화합물이 생성된 것을 확인하였다. 또한 에너지 분산형 X선 분광법(SEM-EDX 분석)에 의해 클로라이드 음이온의 존재를 확인하였다. 추가로 상술한 바와 동일하게 하여 극대 흡수 파장, 그램 흡광 계수 및 반값 전폭을 측정한 바, 식 (5)로 표시되는 화합물의 극대 흡수 파장은 457 nm이며, 극대 흡수 파장에서의 그램 흡광 계수 ε(λmax)는 58 L/(g·cm)이며, 반값 전폭은 74 nm이었다. 1 H-NMR analysis was performed to confirm that the compound represented by formula (5) was produced. Additionally, the presence of chloride anion was confirmed by energy dispersive X-ray spectroscopy (SEM-EDX analysis). Additionally, the maximum absorption wavelength, gram extinction coefficient, and full width at half maximum were measured in the same manner as described above. As a result, the maximum absorption wavelength of the compound represented by equation (5) was 457 nm, and the gram extinction coefficient ε( λmax) was 58 L/(g·cm), and the full width at half maximum was 74 nm.
1H-NMR(중디메틸설폭시드)δ: 10.9 (m, 2H), 7.85 ~ 8.00 (m, 22H), 7.42 ~ 7.48 (m, 12H), 6.08 (s, 2H), 2.61 ~ 3.00 (m, 5H), 2.09 (m, 2H), 1.60 ~ 1.65 (m, 2H) 1 H-NMR (dimethyl sulfoxide) δ: 10.9 (m, 2H), 7.85 ~ 8.00 (m, 22H), 7.42 ~ 7.48 (m, 12H), 6.08 (s, 2H), 2.61 ~ 3.00 (m, 5H), 2.09 (m, 2H), 1.60 ~ 1.65 (m, 2H)
실시예 6: 식 (6)으로 표시되는 화합물의 합성Example 6: Synthesis of the compound represented by formula (6)
[화학식 35][Formula 35]
식 (1)로 표시되는 화합물 0.2부, 메틸에틸케톤 100부, 암모늄 테트라키스(펜타플루오로페닐)보레이트 0.4부를 가하여 온도 25 ℃에서 2 시간 교반하였다. 얻어진 혼합물로부터 용매를 증류제거한 후, 정제하여 식 (6)으로 표시되는 화합물 0.3부를 얻었다.0.2 parts of the compound represented by formula (1), 100 parts of methyl ethyl ketone, and 0.4 parts of ammonium tetrakis(pentafluorophenyl)borate were added and stirred at a temperature of 25°C for 2 hours. After distilling off the solvent from the obtained mixture, it was purified to obtain 0.3 parts of the compound represented by formula (6).
LC-MS 측정 및 1H-NMR 해석을 수행하여 식 (6)으로 표시되는 화합물이 생성된 것을 확인하였다. 또한 에너지 분산형 X선 분광법(SEM-EDX 분석)에 의해 테트라키스(펜타플루오로페닐)보레이트 음이온의 존재를 확인하였다. 추가로 상술한 바와 동일하게 하여 극대 흡수 파장, 그램 흡광 계수 및 반값 전폭을 측정한 바, 식 (6)으로 표시되는 화합물의 극대 흡수 파장은 523 nm이며, 극대 흡수 파장에서의 그램 흡광 계수 ε(λmax)는 121 L/(g·cm)이며, 반값 전폭은 48 nm이었다.LC-MS measurement and 1 H-NMR analysis were performed to confirm that the compound represented by formula (6) was produced. Additionally, the presence of tetrakis(pentafluorophenyl)borate anion was confirmed by energy dispersive X-ray spectroscopy (SEM-EDX analysis). Additionally, the maximum absorption wavelength, gram extinction coefficient, and full width at half maximum were measured in the same manner as described above. As a result, the maximum absorption wavelength of the compound represented by equation (6) was 523 nm, and the gram extinction coefficient ε( λmax) was 121 L/(g·cm), and the full width at half maximum was 48 nm.
1H-NMR(중디메틸설폭시드)δ: 7.18 ~ 7.63 (m, 8H), 6.39 (s, 2H), 4.21 ~ 4.40 (m, 4H), 3.11 ~ 3.35 (m, 4H), 0.81 ~ 2.73 (m, 9 H) 1 H-NMR (dimethyl sulfoxide) δ: 7.18 ~ 7.63 (m, 8H), 6.39 (s, 2H), 4.21 ~ 4.40 (m, 4H), 3.11 ~ 3.35 (m, 4H), 0.81 ~ 2.73 ( m, 9H)
LC-MS; [M+H] = 367.5, [Nega] = 679.2LC-MS; [M+H] = 367.5, [Nega] = 679.2
중합예 1: 아크릴 수지(A1)의 제조Polymerization Example 1: Preparation of acrylic resin (A1)
냉각관, 질소 도입관, 온도계 및 교반기를 구비한 반응 용기에, 용매로서 아세트산에틸 81.8부, 아크릴산부틸 96부, 아크릴산 2-히드록시에틸메틸 3부 및 아크릴산 1부의 혼합 용액을 주입하고, 질소 가스로 장치 내의 공기를 치환하여 산소 불포함으로 하면서 내부 온도를 55 ℃로 올렸다. 그 후, 아조비스이소부티로니트릴(중합 개시제) 0.14부를 아세트산에틸 10부에 녹인 용액을 전량 첨가하였다. 개시제 첨가 후 1 시간 이 온도에서 유지하고, 이어서 내부 온도를 54 내지 56℃로 유지하면서 아세트산에틸을 첨가 속도 17.3부/hr로 반응 용기 내로 연속적으로 가하여 아크릴 수지의 농도가 35%가 된 시점에서 아세트산에틸의 첨가를 멈추고, 추가로 아세트산에틸의 첨가 개시부터 12 시간 경과할 때까지 이 온도에서 보온하였다. 마지막으로 아세트산에틸을 가하여 아크릴 수지의 농도가 20%가 되도록 조절하여 아크릴 수지의 아세트산에틸 용액을 제조하였다. 얻어진 아크릴 수지는 GPC에 의한 폴리스티렌 환산의 중량 평균 분자량 Mw가 140만, Mw/Mn이 5.5이었다. 이것을 아크릴 수지(A1)로 한다.A mixed solution of 81.8 parts of ethyl acetate, 96 parts of butyl acrylate, 3 parts of 2-hydroxyethylmethyl acrylate, and 1 part of acrylic acid as a solvent was injected into a reaction vessel equipped with a cooling pipe, a nitrogen introduction pipe, a thermometer, and a stirrer, and nitrogen gas was added to the reaction vessel equipped with a thermometer and a stirrer. The air inside the furnace was replaced to make it oxygen-free, and the internal temperature was raised to 55°C. After that, the entire solution of 0.14 parts of azobisisobutyronitrile (polymerization initiator) dissolved in 10 parts of ethyl acetate was added. After adding the initiator, this temperature was maintained for 1 hour, and then ethyl acetate was continuously added into the reaction vessel at an addition rate of 17.3 parts/hr while maintaining the internal temperature at 54 to 56°C, and when the concentration of the acrylic resin reached 35%, acetic acid was added. The addition of ethyl was stopped, and the temperature was maintained at this temperature until 12 hours had elapsed from the start of the addition of ethyl acetate. Finally, ethyl acetate was added to adjust the concentration of the acrylic resin to 20% to prepare an ethyl acetate solution of acrylic resin. The obtained acrylic resin had a weight average molecular weight Mw of 1.4 million and Mw/Mn of 5.5 in terms of polystyrene according to GPC. This is referred to as acrylic resin (A1).
실시예 7: 수지 조성물(1)(점착제 조성물(1))의 제조Example 7: Preparation of resin composition (1) (adhesive composition (1))
아크릴 수지(A1)의 아세트산에틸 용액(수지 농도: 20%)의 고형분 100부에 대해, 가교제(도소 가부시키가이샤제: 상품명 "코로네이트 L", 이소시아네이트계 화합물, 고형분 75%) 0.5부, 실란 화합물(신에츠 가가쿠고교 가부시키가이샤제: 상품명 "KBM3066") 0.28부, 식 (1)로 표시되는 화합물 0.5부를 혼합하고, 추가로 고형분 농도가 14%가 되도록 2-부탄온을 첨가하여 수지 조성물(1)(점착제 조성물)를 얻었다. 또, 상기 가교제의 배합량은 유효 성분으로서의 질량부 수이다.Based on 100 parts of solid content of the ethyl acetate solution (resin concentration: 20%) of the acrylic resin (A1), 0.5 part of crosslinking agent (Tosoh Corporation: brand name "Coronate L", isocyanate-based compound, solid content of 75%), silane 0.28 parts of the compound (manufactured by Shinetsu Chemical Co., Ltd.: product name "KBM3066") was mixed with 0.5 parts of the compound represented by formula (1), and 2-butanone was added so that the solid content concentration was 14% to obtain a resin composition. (1) (adhesive composition) was obtained. In addition, the compounding amount of the crosslinking agent is the number of parts by mass as the active ingredient.
실시예 8 내지 18, 비교예 1 및 2: 수지 조성물(2) 내지 (14)의 제조Examples 8 to 18, Comparative Examples 1 and 2: Preparation of resin compositions (2) to (14)
표 9에 나타낸 바와 같이 각 성분 및 각 성분의 함유량을 바꾼 것 이외에는 실시예 7과 동일하게 하여 수지 조성물(2) 내지 (14)를 제작하였다. 또, 가교제의 배합량은 유효 성분으로서의 질량부 수이며, 수지(A)는 고형분의 질량부 수이다.As shown in Table 9, resin compositions (2) to (14) were produced in the same manner as in Example 7, except that each component and the content of each component were changed. In addition, the compounding amount of the crosslinking agent is the number of parts by mass as the active ingredient, and the resin (A) is the number of parts by mass of the solid content.
또한, 표 9에서의 각 약어는 이하의 의미를 나타낸다.Additionally, each abbreviation in Table 9 has the following meaning.
아크릴 수지(A1): 중합예 1에서 합성한 아크릴 수지(A1)Acrylic resin (A1): Acrylic resin (A1) synthesized in Polymerization Example 1
식 (1): 실시예 1에서 합성한 식 (1)로 표시되는 화합물Formula (1): Compound represented by formula (1) synthesized in Example 1
식 (2): 실시예 2에서 합성한 식 (2)로 표시되는 화합물Formula (2): Compound represented by formula (2) synthesized in Example 2
식 (3): 실시예 3에서 합성한 식 (3)으로 표시되는 화합물Formula (3): Compound represented by formula (3) synthesized in Example 3
식 (4): 실시예 4에서 합성한 식 (4)로 표시되는 화합물Formula (4): Compound represented by formula (4) synthesized in Example 4
식 (5): 실시예 5에서 합성한 식 (5)로 표시되는 화합물Formula (5): Compound represented by formula (5) synthesized in Example 5
식 (6): 실시예 6에서 합성한 식 (6)으로 표시되는 화합물Formula (6): Compound represented by formula (6) synthesized in Example 6
코로네이트 L: 도소 가부시키가이샤제, 상품명: 코로네이트 L, 이소시아네이트계 가교제Coronate L: manufactured by Tosoh Corporation, brand name: Coronate L, isocyanate-based crosslinking agent
KBM3066: 신에츠 가가쿠고교 가부시키가이샤제, 상품명: KBM3066, 실란 커플링제KBM3066: manufactured by Shinetsu Kagaku Kogyo Co., Ltd., product name: KBM3066, silane coupling agent
식 (B1): 미국 특허 제6004536호 명세서를 참조하여 합성한 하기 식 (B)로 표시되는 화합물(3-부틸-2-[3-(-3-부틸-5-페닐-2(3H)-벤졸리리덴)-1-프로펜-1-일]-5-페닐-벤족사졸륨 파라톨루엔설포네이트). 극대 흡수 파장은 498 nm이며, 극대 흡수 파장에서의 그램 흡광 계수 ε(λmax)는 230 L/(g·cm)이었다.Formula (B1): Compound represented by the following formula (B) (3-butyl-2-[3-(-3-butyl-5-phenyl-2(3H)-) synthesized with reference to the specification of U.S. Patent No. 6004536 Benzolylidene)-1-propen-1-yl]-5-phenyl-benzoxazolium paratoluenesulfonate). The maximum absorption wavelength was 498 nm, and the gram extinction coefficient ε(λmax) at the maximum absorption wavelength was 230 L/(g·cm).
[화학식 36][Formula 36]
식 (B2): C.I. 솔벤트 오렌지 15. 극대 흡수 파장은 498 nm이며, 극대 흡수 파장에서의 그램 흡광 계수 ε(λmax)는 581 L/(g·cm)이었다.Equation (B2): C.I. Solvent Orange 15. The maximum absorption wavelength was 498 nm, and the gram extinction coefficient ε(λmax) at the maximum absorption wavelength was 581 L/(g·cm).
<수지 조성물(1)의 성형체 평가><Evaluation of molded body of resin composition (1)>
〔수지 성형체(1)의 제작〕[Production of the resin molded body (1)]
얻어진 수지 조성물(1)을 이형 처리가 실시된 폴리에틸렌테레프탈레이트 필름으로 이루어진 세퍼레이트 필름〔린텍 가부시키가이샤로부터 입수한 상품명 "PLR-382190"〕의 이형 처리면에 어플리케이터를 사용하여 도포하고, 100 ℃에서 1분 동안 건조하여 수지 성형체(점착제층)(1)를 제작하였다. 얻어진 수지 성형체(1)의 두께는 20 ㎛이었다.The obtained resin composition (1) was applied using an applicator to the release-treated surface of a separate film made of a polyethylene terephthalate film to which release treatment had been performed [trade name "PLR-382190" obtained from Lintech Co., Ltd.], and applied at 100°C. After drying for 1 minute, a resin molded body (adhesive layer) (1) was produced. The thickness of the obtained resin molded body (1) was 20 μm.
〔수지 성형체(1)의 흡광도 유지율 측정〕[Measurement of absorbance retention rate of resin molded body (1)]
두께 8 ㎛인 편광자의 편면에 접착제층을 사용하여 두께 13 ㎛인 시클로올레핀 필름을 접합한 편광판을 준비하였다.A polarizing plate was prepared by bonding a cycloolefin film with a thickness of 13 μm to one side of a polarizer with a thickness of 8 μm using an adhesive layer.
편광판의 편광자측에 수지 성형체(1)를 라미네이터에 의해 접합한 후, 온도 23 ℃, 상대습도 65%의 조건으로 7일 동안 양생하여 시클로올레핀 필름/편광자/수지 성형체(1)/세퍼레이트 필름의 적층체를 얻었다. 얻어진 적층체를 30 cm Х 30 cm의 크기로 재단하고 세퍼레이트 필름을 박리하여, 수지 성형체(1)와 무알칼리 유리〔코닝사제 상품명 "EAGLE XG"〕를 접합하여 시클로올레핀 필름/편광자/수지 성형체(1)/유리의 적층 구조를 포함하는 적층체(1-1)를 얻었다.After bonding the resin molded body (1) to the polarizer side of the polarizing plate using a laminator, curing for 7 days at a temperature of 23°C and 65% relative humidity to laminate the cycloolefin film/polarizer/resin molded body (1)/separate film. got a sieve The obtained laminate was cut to a size of 30 cm Х 30 cm, the separate film was peeled off, and the resin molded body (1) and alkali-free glass [trade name "EAGLE 1)/A laminate (1-1) containing a laminate structure of glass was obtained.
얻어진 적층체(1-1)를 온도 63 ℃, 상대습도 50% RH의 조건으로 선샤인 웨더 미터 (스가 시켄키 가부시키가이샤제)에 75 시간 투입하여 내후성 시험을 실시하였다. 추출한 적층체(1-1)의 흡광도를 상기와 동일한 방법으로 측정하였다. 측정한 흡광도로부터, 하기 식에 기초하여 파장 535 nm에서의 샘플의 흡광도 유지율을 구하였다. 결과를 표 10에 나타낸다. 흡광도 유지율이 100에 가까운 값일수록 광 선택 흡수 기능의 열화가 없어 양호한 내후성을 갖는 것을 나타낸다.The obtained laminate (1-1) was subjected to a weather resistance test by putting it into a Sunshine Weather Meter (manufactured by Suga Shikenki Co., Ltd.) for 75 hours under the conditions of a temperature of 63°C and a relative humidity of 50% RH. The absorbance of the extracted laminate (1-1) was measured in the same manner as above. From the measured absorbance, the absorbance retention rate of the sample at a wavelength of 535 nm was determined based on the following equation. The results are shown in Table 10. The closer the absorbance retention rate is to 100, the better the weather resistance is without deterioration of the light selective absorption function.
또한, 흡광도 유지율을 평가하기 위한 흡수 파장은 측정한 흡광도 중 극대 흡수 파장의 장파측에서 흡광도가 1 내지 1.5가 되는 파장을 선택하였다. 이는 상기 파장이 분광 측정 장치의 측정 정밀도 상 가장 감도가 좋은 흡광도 영역이기 때문이다.In addition, the absorption wavelength for evaluating the absorbance retention rate was selected as the wavelength with an absorbance of 1 to 1.5 on the long-wavelength side of the maximum absorption wavelength among the measured absorbances. This is because the wavelength is the absorbance region with the highest sensitivity in terms of measurement precision of the spectroscopic measurement device.
흡광도 유지율(%)Absorbance retention rate (%)
= (내후성 시험 후의 A(535)/내후성 시험 전의 A(535)) Х 100= (A(535) after weathering test/A(535) before weathering test) Х 100
[식 중, A(535)는 적층체(1-1)의 흡광도를 나타낸다.][In the formula, A(535) represents the absorbance of the laminate (1-1).]
수지 조성물(1) 대신에 수지 조성물(2)을 사용하여 수지 성형체(2), 적층체(2-1)를 제작하고 동일하게 흡광도 유지율 평가를 수행하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 560 nm에서 수행하였다.A resin molded body (2) and a laminate (2-1) were manufactured using the resin composition (2) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 560 nm.
수지 조성물(1) 대신에 수지 조성물(3)을 사용하여 수지 성형체(3), 적층체(3-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 550 nm에서 수행하였다.A resin molded body (3) and a laminate (3-1) were produced using the resin composition (3) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 550 nm.
수지 조성물(1) 대신에 수지 조성물(4)을 사용하여 수지 성형체(4), 적층체(4-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 550 nm에서 수행하였다.A resin molded body (4) and a laminate (4-1) were produced using the resin composition (4) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 550 nm.
수지 조성물(1) 대신에 수지 조성물(5)을 사용하여 수지 성형체(5), 적층체(5-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 535 nm에서 수행하였다.A resin molded body (5) and a laminate (5-1) were produced using the resin composition (5) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 535 nm.
수지 조성물(1) 대신에 수지 조성물(6)을 사용하여 수지 성형체(6), 적층체(6-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 570 nm에서 수행하였다.A resin molded body (6) and a laminate (6-1) were produced using the resin composition (6) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 570 nm.
수지 조성물(1) 대신에 수지 조성물(7)을 사용하여 수지 성형체(7), 적층체(7-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 535 nm에서 수행하였다.A resin molded body (7) and a laminate (7-1) were produced using the resin composition (7) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 535 nm.
수지 조성물(1) 대신에 수지 조성물(8)을 사용하여 수지 성형체(8), 적층체(8-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 540 nm에서 수행하였다.A resin molded body (8) and a laminate (8-1) were produced using the resin composition (8) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 540 nm.
수지 조성물(1) 대신에 수지 조성물(9)을 사용하여 수지 성형체(9), 적층체(9-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 485 nm에서 수행하였다.A resin molded body (9) and a laminate (9-1) were produced using the resin composition (9) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 485 nm.
수지 조성물(1) 대신에 수지 조성물(10)을 사용하여 수지 성형체(10), 적층체(10-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 485 nm에서 수행하였다.A resin molded body (10) and a laminate (10-1) were produced using the resin composition (10) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 485 nm.
수지 조성물(1) 대신에 수지 조성물(11)을 사용하여 수지 성형체(11), 적층체(11-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 485 nm에서 수행하였다.A resin molded body (11) and a laminate (11-1) were produced using the resin composition (11) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 485 nm.
수지 조성물(1) 대신에 수지 조성물(12)을 사용하여 수지 성형체(12), 적층체(12-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 485 nm에서 수행하였다.A resin molded body (12) and a laminate (12-1) were produced using the resin composition (12) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 485 nm.
수지 조성물(1) 대신에 수지 조성물(13)을 사용하여 수지 성형체(13), 적층체(13-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 510 nm에서 수행하였다.A resin molded body (13) and a laminate (13-1) were produced using the resin composition (13) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 510 nm.
수지 조성물(1) 대신에 수지 조성물(14)을 사용하여 수지 성형체(14), 적층체(14-1)를 제작하고 동일하게 흡광도 유지율 평가를 실시하였다. 결과를 표 10에 나타낸다. 흡광도 유지율 평가는 파장 485 nm에서 수행하였다.A resin molded body (14) and a laminate (14-1) were produced using the resin composition (14) instead of the resin composition (1), and the absorbance retention rate was evaluated in the same manner. The results are shown in Table 10. Absorbance retention evaluation was performed at a wavelength of 485 nm.
〔수지 성형체(1)의 내블리드성 평가〕[Evaluation of bleed resistance of resin molded body (1)]
얻어진 수지 성형체(1)의 한쪽 면에 추가로 세퍼레이트 필름을 적층하여 양면 세퍼레이트 필름이 부착된 점착제층을 얻었다. 얻어진 양면 세퍼레이트 필름이 부착된 수지층(1)을 온도 23 내지 25 ℃의 공기 하에 1개월 보관하였다. 보관 후의 양면 세퍼레이트 필름이 부착된 수지 성형체(1)에 대해 현미경을 사용하여 면내 화합물의 결정 석출 유무를 확인하였다. 결정 석출이 없는 경우를 a로 하고, 결정 석출이 있는 경우를 b로 하였다. 평가 결과를 표 11에 나타낸다.A separate film was further laminated on one side of the obtained resin molded body (1) to obtain an adhesive layer with a double-sided separate film attached. The obtained resin layer (1) with the double-sided separate film attached was stored in air at a temperature of 23 to 25°C for 1 month. The resin molded body (1) with the double-sided separator film attached after storage was checked for the presence or absence of crystal precipitation of the compound in the surface using a microscope. The case without crystal precipitation was designated as a, and the case with crystal precipitation was designated as b. The evaluation results are shown in Table 11.
수지 성형체(2) 내지 (14)를 사용하여 동일하게 내블리드성 평가를 수행하였다. 결과를 표 11에 나타낸다.Bleed resistance evaluation was similarly performed using resin molded bodies (2) to (14). The results are shown in Table 11.
〔밀착성 평가〕[Adhesion evaluation]
(샘플 제작)(sample production)
두께 23 ㎛인 편광자의 양면에 접착제층을 사용하여 두께 52 ㎛인 시클로올레핀 필름 및 두께 80 ㎛인 (메타)아크릴계 수지 필름(이하 PMMA 필름이라 하는 경우가 있다.)을 접합한 편광판을 준비하였다.A polarizing plate was prepared by bonding a cycloolefin film with a thickness of 52 μm and a (meth)acrylic resin film (hereinafter sometimes referred to as PMMA film) with a thickness of 80 μm to both sides of a polarizer with a thickness of 23 μm using an adhesive layer.
편광판의 시클로올레핀 필름측에 수지 성형체(1)를 라미네이터에 의해 접합한 후, 온도 23 ℃, 상대습도 65%의 조건으로 7일 동안 양생하여 PMMA 필름/편광자/시클로올레핀 필름/수지 성형체(1)/세퍼레이트 필름의 적층체를 얻었다. 얻어진 적층체의 편광자 흡수축이 긴변에 평행이 되도록 150 mm Х 25 mm의 크기로 재단하고 세퍼레이트 필름을 박리하여, 수지 성형체(1)를 무알칼리 유리 기판〔코닝사제 상품명 "EAGLE XG", "세로 160 mm, 가로 50 mm, 두께 0.7 mm〕의 중앙부에 접합하였다. 얻어진 적층체를 오토클레이브 중에 온도 50 ℃, 압력 5 kgf/cm2(490.3 kPa)로 20분 동안 가압하여 이것을 샘플로 하였다.After the resin molded body (1) is bonded to the cycloolefin film side of the polarizing plate using a laminator, it is cured for 7 days at a temperature of 23°C and a relative humidity of 65% to form a PMMA film/polarizer/cycloolefin film/resin molded body (1). /A laminate of separate films was obtained. The obtained laminate was cut to a size of 150 mm Х 25 mm so that the absorption axis of the polarizer was parallel to the long side, the separate film was peeled off, and the resin molded body (1) was placed on an alkali-free glass substrate [product name "EAGLE 160 mm, 50 mm in width, 0.7 mm in thickness.] The obtained laminate was pressurized in an autoclave at a temperature of 50°C and a pressure of 5 kgf/cm 2 (490.3 kPa) for 20 minutes, and this was used as a sample.
(온도 23 ℃에서의 밀착력 측정)(Adhesion measurement at a temperature of 23°C)
상기 샘플을 온도 23 ℃, 상대습도 55% RH의 환경 하에 24 시간 보관하였다. 그 후, 유리 기판과 점착제층 사이에 커터 칼날을 넣어 길이 방향으로 끝에서 30 mm 박리하고, 그 박리 부분을 만능 인장 시험기〔(주)시마즈 세이사쿠쇼제의 상품명 "AGS-50 NX"〕의 손잡이부로 잡았다. 이 상태의 샘플을 온도 23 ℃, 상대습도 55% RH의 분위기 중에서 JIS K 6854-2: 1999 "접착제-박리 접착 강도 시험 방법-제2부: 180도 박리"에 준하여 손잡이 이동 속도 300 mm/분으로 180도 박리 시험을 수행하고, 손잡이부의 30 mm를 제외한 120 mm 길이에 걸친 평균 박리력을 구하여, 이것을 온도 23 ℃에서의 밀착력으로 하였다. 결과를 표 11에 나타낸다.The sample was stored for 24 hours in an environment with a temperature of 23°C and a relative humidity of 55% RH. After that, a cutter blade is inserted between the glass substrate and the adhesive layer to peel 30 mm from the end in the longitudinal direction, and the peeled portion is held by the handle of a universal tensile tester [trade name "AGS-50 NX" manufactured by Shimadzu Seisakusho Co., Ltd.]. I took it as a fortune. The sample in this state was tested in an atmosphere with a temperature of 23°C and a relative humidity of 55% RH, in accordance with JIS K 6854-2: 1999 “Adhesive-Peel Adhesion Strength Test Method-Part 2: 180 Degree Peel” at a handle movement speed of 300 mm/min. A 180-degree peeling test was performed, and the average peeling force over a length of 120 mm excluding the 30 mm of the handle was determined, and this was taken as the adhesion force at a temperature of 23°C. The results are shown in Table 11.
본 발명의 화합물은 극대 흡수 파장 부근의 빛에 대한 높은 흡수 선택성을 갖는다. 또한 본 발명의 화합물을 포함하는 수지 조성물은 내후성 시험 후에도 높은 흡광도 유지율을 가져 양호한 내후성을 갖는다.The compounds of the present invention have high absorption selectivity for light near the maximum absorption wavelength. In addition, the resin composition containing the compound of the present invention has a high absorbance retention rate even after a weather resistance test and has good weather resistance.
본 발명은 가시광 영역(파장 400 nm 내지 파장 750 nm, 바람직하게 파장 450 nm 내지 파장 600 nm)의 빛을 효율적으로 흡수하고, 동시에 양호한 내후성을 갖는 신규 화합물을 제공하는 것을 목적으로 한다.The purpose of the present invention is to provide a novel compound that efficiently absorbs light in the visible light range (wavelength 400 nm to 750 nm, preferably wavelength 450 nm to 600 nm) and at the same time has good weather resistance.
Claims (15)
[식 (I-A) 및 (I-B) 중,
고리 W1 및 고리 W2는 각각 독립적으로 적어도 하나의 이중 결합을 고리의 구성 요소로 갖는 고리 구조를 나타낸다.
고리 W1 및 고리 W2는 각각 독립적으로 치환기를 가질 수 있다.
고리 W3 및 고리 W4는 각각 독립적으로 치환기를 가질 수 있는 함질소 복소환기를 나타낸다. 단, 고리 W3 및 고리 W4는 피롤 고리 구조 및 황 원자를 포함하지 않는다.
Ar1 및 Ar2는 각각 독립적으로 방향족 기를 나타낸다.
R1 및 R2는 각각 독립적으로 수소 원자 또는 1가의 치환기를 나타낸다.]A compound containing at least one cation and an anion selected from the cation represented by formula (IA) and the cation represented by formula (IB).
[In formulas (IA) and (IB),
Ring W 1 and Ring W 2 each independently represent a ring structure having at least one double bond as a ring component.
Ring W 1 and ring W 2 may each independently have a substituent.
Ring W 3 and Ring W 4 each independently represent a nitrogen-containing heterocyclic group that may have a substituent. However, ring W 3 and ring W 4 do not contain a pyrrole ring structure and a sulfur atom.
Ar 1 and Ar 2 each independently represent an aromatic group.
R 1 and R 2 each independently represent a hydrogen atom or a monovalent substituent.]
상기 음이온이 유기 음이온인 화합물.According to paragraph 1,
A compound wherein the anion is an organic anion.
상기 음이온이 메티드 음이온, 아미드 음이온, 설포네이트 음이온 또는 보레이트 음이온인 화합물.According to paragraph 2,
A compound wherein the anion is a methide anion, an amide anion, a sulfonate anion, or a borate anion.
상기 음이온이 식 (c-A)로 표시되는 음이온, 식 (c-B)로 표시되는 음이온, 식 (c-C)로 표시되는 음이온 및 식 (c-D)로 표시되는 음이온 중 어느 하나인 화합물.
[식 (c-A) 중, R1c, R2c 및 R3c는 각각 독립적으로 1가의 치환기를 나타낸다.
식 (c-B) 중, R4c 및 R5c는 각각 독립적으로 1가의 치환기를 나타낸다.
식 (c-C) 중, R6c는 1가의 치환기를 나타낸다.
식 (c-D) 중, R7c, R8c, R9c 및 R10c는 각각 독립적으로 1가의 치환기를 나타낸다.]According to paragraph 2,
A compound wherein the anion is any one of the anion represented by the formula (cA), the anion represented by the formula (cB), the anion represented by the formula (cC), and the anion represented by the formula (cD).
[In formula (cA), R 1c , R 2c and R 3c each independently represent a monovalent substituent.
In formula (cB), R 4c and R 5c each independently represent a monovalent substituent.
In formula (cC), R 6c represents a monovalent substituent.
In formula (cD), R 7c , R 8c , R 9c and R 10c each independently represent a monovalent substituent.]
R1c, R2c, R3c, R4c, R5c, R6c, R7c, R8c, R9c 및 R10c는 각각 독립적으로 불소 원자, 탄소수 1 내지 12의 플루오로알킬기, 탄소수 6 내지 18의 플루오로아릴기, 시아노기, 니트로기, 또는 -SO2-R11c(R11c는 불소 원자를 가질 수 있는 탄소수 1 내지 12의 탄화수소기를 나타낸다.)인 화합물.According to paragraph 4,
R 1c , R 2c , R 3c , R 4c , R 5c , R 6c , R 7c , R 8c , R 9c and R 10c are each independently a fluorine atom, a fluoroalkyl group having 1 to 12 carbon atoms, or a fluoroalkyl group having 6 to 18 carbon atoms A compound that is a fluoroaryl group, cyano group, nitro group, or -SO 2 -R 11c (R 11c represents a hydrocarbon group having 1 to 12 carbon atoms that may have a fluorine atom).
상기 음이온이 식 (c-A1)로 표시되는 음이온, 식 (c-B1)로 표시되는 음이온, 식 (c-C1)로 표시되는 음이온, 식 (c-D1)로 표시되는 음이온 및 식 (c-D2)로 표시되는 음이온 중 어느 하나인 화합물.
[식 (c-A1) 중, Rf1, Rf2 및 Rf3은 각각 독립적으로 탄소수 1 내지 12의 플루오로알킬기를 나타낸다.
식 (c-B1) 중, Rf4 및 Rf5는 각각 독립적으로 불소 원자 또는 탄소수 1 내지 12의 플루오로알킬기를 나타낸다.
식 (c-C1) 중, Rf6은 탄소수 1 내지 12의 플루오로알킬기를 나타낸다.
식 (c-D2) 중, R1d, R2d, R3d 및 R4d는 각각 독립적으로 불소 원자 또는 탄소수 1 내지 12의 플루오로알킬기를 나타낸다. n1 내지 n4는 각각 독립적으로 0 내지 5의 정수를 나타낸다.]According to paragraph 4,
The anion represented by the formula (c-A1), the anion represented by the formula (c-B1), the anion represented by the formula (c-C1), the anion represented by the formula (c-D1), and the anion represented by the formula (c) A compound that is one of the anions represented by -D2).
[In formula (c-A1), Rf 1 , Rf 2 and Rf 3 each independently represent a fluoroalkyl group having 1 to 12 carbon atoms.
In formula (c-B1), Rf 4 and Rf 5 each independently represent a fluorine atom or a fluoroalkyl group having 1 to 12 carbon atoms.
In formula (c-C1), Rf 6 represents a fluoroalkyl group having 1 to 12 carbon atoms.
In formula (c-D2), R 1d , R 2d , R 3d and R 4d each independently represent a fluorine atom or a fluoroalkyl group having 1 to 12 carbon atoms. n1 to n4 each independently represent an integer from 0 to 5.]
상기 음이온이 테트라키스(펜타플루오로페닐)보레이트 음이온인 화합물.According to clause 6,
A compound wherein the anion is tetrakis(pentafluorophenyl)borate anion.
[식 (M-A) 중,
고리 W1 및 고리 W2는 각각 독립적으로 적어도 하나의 이중 결합을 고리의 구성 요소로 갖는 고리 구조를 나타낸다.
고리 W1 및 고리 W2는 각각 독립적으로 치환기를 가질 수 있다.
고리 W4는 치환기를 가질 수 있는 함질소 복소환기를 나타낸다. 단, 고리 W4는 피롤 고리 구조 및 황 원자를 포함하지 않는다.]A compound represented by the following formula (MA).
[In equation (MA),
Ring W 1 and Ring W 2 each independently represent a ring structure having at least one double bond as a ring component.
Ring W 1 and ring W 2 may each independently have a substituent.
Ring W 4 represents a nitrogen-containing heterocyclic group that may have a substituent. However, ring W 4 does not contain a pyrrole ring structure and a sulfur atom.]
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JP2021117216A JP2023013209A (en) | 2021-07-15 | 2021-07-15 | Compound |
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PCT/KR2022/010247 WO2023287208A1 (en) | 2021-07-15 | 2022-07-13 | Compound, and composition, molded body, dyed product, optical layer, and laminate each comprising same |
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