KR20220140263A - Appratus for processing substrate and method for processing substrate - Google Patents

Abstract

According to an embodiment of the present invention, a substrate processing apparatus comprises: a chamber; a supporter which is installed inside the chamber and includes a mounting area for allowing a substrate to be mounted; a first measurement unit which is installed on an upper part of the chamber to measure a temperature of the supporter; a second measurement unit which is installed on an upper part of the chamber to measure a temperature of the substrate mounted on the supporter; a heating unit which is installed at a lower part of the supporter; and a control unit which controls an operation of the heating unit according to the temperature measured from at least one of the first measurement unit and the second measurement unit. Therefore, according to embodiments of the present invention, the substrate processing apparatus can shorten the time required for adjusting the temperature of the substrate to be the target processing temperature after the substrate is mounted on the supporter. In addition, the substrate processing apparatus can measure the temperature of the substrate more accurately during substrate processing. Accordingly, the present invention can allow the temperature of the substrate to be easily adjusted or maintained to or at a processing temperature and prevent substrate processing defects caused by temperature variations.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method capable of preventing occurrence of a substrate processing defect.

A substrate processing apparatus for growing a thin film on a substrate includes a support for supporting the substrate, a heating unit for heating the support, and a pyrometer for measuring the temperature of the substrate. The operation of the heating unit is controlled according to the temperature measured by the pyrometer. And the pyrometer measures the temperature using the set emissivity of the substrate.

Meanwhile, before the substrate is mounted on the support, it is necessary to adjust the temperature of the support to be close to the target process temperature. However, since the pyrometer is set to measure the temperature by applying the emissivity of the substrate, the temperature of the support cannot be accurately measured. Accordingly, there is a large difference between the temperature measured by the pyrometer and the actual temperature of the support. Therefore, in a state where the temperature of the support is adjusted by controlling the heating unit according to the temperature measured by the pyrometer, it takes a long time to adjust the temperature of the substrate to the process temperature by seating the substrate on the support, or it is difficult to control. there is a problem.

In addition, when the substrate is not adjusted to the process temperature, a defect may occur in the growth film, and a long time is required to adjust the substrate to the process temperature, thereby increasing the overall process time.

Korea Registered Patent 10-1728072

The present invention provides a substrate processing apparatus and a substrate processing method capable of preventing defects according to the temperature of the substrate.

The present invention provides a substrate processing apparatus and a substrate processing method capable of easily adjusting the temperature of a substrate to a process target temperature.

A substrate processing apparatus according to an embodiment of the present invention includes: a chamber; a support installed in the chamber and including a seating area on which a substrate is mounted; a first measuring unit installed on the upper part of the chamber to measure the temperature of the support; a second measuring unit installed at the upper portion of the chamber to measure the temperature of the substrate seated on the support; a heating unit installed on the lower side of the support; and a control unit for controlling an operation of the heating unit according to the temperature measured by at least one of the first measuring unit and the second measuring unit. includes

The support includes an outer area outside the seating area, the first measuring part is installed on the upper part of the chamber to face the outer area, and the second measuring part is located on the upper part of the chamber to face the seating area. can be installed.

The second measurement unit may be installed to face an edge of the seating area at the opposite side of the gate provided in the chamber so that the substrate is loaded and unloaded.

The control unit controls the operation of the heating unit according to the temperature measured by the second measurement unit during at least the process of processing the substrate seated on the support, and at least a part of the time other than the substrate processing process During operation, the operation of the heating unit may be controlled according to the temperature measured by the first measuring unit.

It may include a third measuring unit installed on the side of the chamber to measure the temperature of at least one of the inside of the chamber, the support, and the substrate.

A substrate processing method according to an embodiment of the present invention includes a heating step of operating a heating unit installed under a support located inside a chamber; a first measuring step of measuring the temperature of the support using a first measuring unit; a seating step of seating the substrate on the support when the support reaches a preset first temperature; a second measuring step of measuring the temperature of the substrate seated on the support using a second measuring unit; and a control step of controlling the operation of the heating unit according to the temperature measured by at least one of the first measuring unit and the second measuring unit.

It is carried out between the seating step and the second measuring step, and may further include a temperature raising step of setting the temperature of the substrate to a preset second temperature.

The heating step may include a third measuring step of measuring the temperature of at least one of the inside of the chamber, the support, and the substrate using a third measuring unit.

According to the embodiments of the present invention, before the substrate is seated on the support, the operation of the heating unit is controlled through the temperature measured by the measurement unit disposed to face the outer region of the support, and then the seating of the support is performed during the substrate processing process. The operation of the heating unit is controlled through the temperature measured by the measuring unit disposed to face the region.

Accordingly, after the substrate is seated on the support, it is possible to shorten the time for adjusting the substrate to a target process temperature. In addition, it is possible to more accurately measure the temperature of the substrate during the substrate processing process. Accordingly, it is easy to control or maintain the substrate at the process temperature, and it is possible to prevent the occurrence of substrate processing defects according to the temperature.

1 is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.
2 is a conceptual diagram for explaining a state in which the first and second measurement units are installed on the upper side of the support according to the embodiment of the present invention.
3 is a flowchart illustrating an operation of a substrate processing apparatus according to an exemplary embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments, but will be implemented in various different forms, only these embodiments allow the disclosure of the present invention to be complete, and to completely inform those of ordinary skill in the scope of the invention It is provided to give. The drawings may be exaggerated in order to explain the embodiment of the present invention, and like reference numerals in the drawings refer to the same components.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2 . In this case, the substrate may be, for example, a wafer. In addition, a substrate processing apparatus is demonstrated as an example as a film-forming apparatus which forms an epitaxial layer on a board|substrate.

1 is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention. 2 is a conceptual diagram for explaining a state in which the first and second measurement units are installed on the upper side of the support according to the embodiment of the present invention.

Referring to FIG. 1 , a substrate processing apparatus according to an embodiment of the present invention includes a chamber 100 having an internal space, a support 200 installed in the chamber 100 to support a substrate S, and at least a part of the support. The heating unit 300 installed on the outside of the chamber 100 to face 200, the first measuring unit 400a installed to face the support 200 to measure the temperature, and the substrate S of the support 200 A control unit for controlling the operation of the heating unit 300 according to the temperature measured from the second measuring unit 400b, the first and second measuring units 400a and 400b installed to face the seating area and measuring the temperature (500).

In addition, the substrate processing apparatus injects the gas for the process toward the substrate S seated on the third measuring unit 400c and the support 200 provided separately from the first and second measuring units 400a and 400b. It may include an injection unit 600 installed in the chamber 100, a driving unit 700 for elevating or rotating the support 200, and an exhaust unit (not shown) for exhausting gases and impurities inside the chamber 100. have.

The chamber 100 may include a chamber body 110 , an upper body 120 installed on an upper portion of the chamber body 110 , and a lower body 130 installed on a lower portion of the chamber body 110 . The chamber body 110 may have an open tubular shape with upper and lower portions, the upper body 120 is installed to cover the upper opening of the chamber body 110 , and the lower portion to cover the lower opening of the chamber body 110 . The body 130 may be installed. In addition, the upper body 120 may have a dome shape having an inclined surface whose height increases toward the center in the width direction. Each of these chambers 100, that is, the chamber body 110, the upper body 120, and the lower body 130, may be made of a transparent material through which light can pass, and may be made of, for example, quartz.

The support 200 is a means by which the substrate S is supported on one surface, for example, an upper surface, and may be installed inside the chamber 100 . The support 200 is provided to have a larger area than the substrate S, and may be provided in a shape corresponding to the substrate S, for example, a rectangular or circular shape.

As described above, the support 200 may be provided with a larger area than the substrate S. Accordingly, when the substrate S is seated on the upper surface of the support 200 , as shown in FIG. 2 , a portion of the upper surface of the support 200 may be exposed without being covered by the substrate S. And it may be seated at a predetermined position when the substrate S is seated on the upper surface of the support 200 . Accordingly, the upper surface of the support 200 is an area on which the substrate S is seated (hereinafter referred to as seating area SA) and an area outside the seating area SA, and is an area where the substrate S is not seated and is exposed. (hereinafter, it may be described as being divided into an outer area OA). In other words, the support 200 may include a seating area SA on which the substrate S is mounted and an outer area OA other than the seating area SA.

The heating unit 300 is a means for heating the inside of the chamber 100 and the support 200 , and may be installed outside the chamber 100 . More specifically, the heating unit 300 may be installed outside the chamber 100 to be positioned below the support 200 . The heating unit 300 may be a means including a plurality of lamps, and the plurality of lamps may be installed to be arranged in a width direction of the support 200 . And the plurality of lamps may include lamps such as halogen that emits radiant heat.

The injector 600 may inject the process gas toward the substrate S seated on the support 200 inside the chamber 100 . The injection unit 600 may be installed in the chamber 100 so that one end to which the gas is injected may be located inside the chamber 100 . At this time, the injection unit 600 may be installed on the side of the chamber 100 , for example, on the chamber body 110 , as shown in FIG. 1 , and may be in the form of a pipe through which gas can pass. In addition, as shown in FIG. 1 , the injection unit 600 may be provided to be inclined upward so that the height thereof increases toward one end at which the gas is injected.

Of course, the installation position, arrangement, and shape of the injection unit 600 is not limited to the above-described example and may be variously modified. That is, the injection unit 600 may be installed in any position as long as one end to which the gas is injected can face the support 200 , for example, it may be installed in the upper body 120 of the chamber 100 . In addition, the injection unit 600 may be provided in a horizontal state without being inclined upward, and may be deformed into various shapes capable of injecting gas toward the substrate S without being limited to a pipe shape.

The process gas injected from the injection unit 600 may be, for example, a gas for forming an epitaxial layer on the substrate S. For example, when the SiC layer is formed as an epitaxial layer, the process gas may include a source gas containing silicon (Si) and a reaction gas containing carbon (C). In addition, when the SiGe layer is formed as the epitaxial layer, the process gas may include a source gas containing silicon (Si) and a reaction gas containing germanium (Ge). Here, the silicon (Si)-containing gas may include, for example, at least one of SiH ₄ and Si ₂ H ₆ , the carbon (C)-containing gas may include SiH ₃ CH ₃ , and the germanium (Ge)-containing gas may include GeH ₄ may be included.

The driving unit 700 may be a means for operating the support 200 by at least one of elevating, lowering, and rotating. The driving unit 700 is installed outside the lower part of the chamber 100 to provide a driving source 710 that provides at least one power of elevating, lowering, and rotating, and a driving shaft having one end connected to the support 200 and the other end connected to the driving source 710 . 710 may be included. According to the driving unit 700 , the driving shaft 710 and the support 200 connected thereto for the operation of the driving source 710 may operate by at least one of elevating, lowering, and rotating.

The first measurement unit 400a may be a means for measuring the temperature of the support 200 . The first measurement unit 400a may be disposed to face the outer area OA of the upper surface of the support 200 as shown in FIGS. 1 and 2 . In addition, the second measurement unit 400b is a means for measuring the temperature of the substrate S seated on the support 200 , and may be disposed to face the seating area SA of the upper surface of the support 200 .

In addition, as shown in FIG. 2 , the second measuring part 400b may be disposed to face the edge of the seating area SA of the support 200 . More specifically, the second side on beam 400b may be disposed to face the edge of the seating area SA of the support 200 from the opposite side to the gate where the substrate S is charged. This is to minimize interference with the substrate S during loading and unloading of the substrate S.

In addition, each of the first and second measurement units 400a and 400b may be installed above the chamber 100 to be positioned above the support 200 . That is, each of the first and second measurement units 400a and 400b may be installed in the upper body 120 that is the upper part of the chamber 100 as shown in FIG. 1 . In addition, each of the first and second measurement units 400a and 400b may be installed such that at least one end facing the support 200 is located inside the chamber 100 . To this end, the first and second measuring units 400a and 400b may be installed to penetrate the upper body 120 in the vertical direction. In addition, the first measurement unit 400a and the second measurement unit 400b may be arranged to be arranged in a width direction of the support 200 .

Of course, the installation positions of the first and second measuring units 400a and 400b are not limited to the above-described examples, and the first measuring unit 400a faces the outer area OA of the support 200, and the second As long as the measuring part 400b can face the seating area SA, it may be installed at any position.

As described above, the first measuring unit 400a may measure the temperature of the support 200 , and the second measuring unit 400b may measure the temperature of the substrate S. That is, the object measuring the temperature by the first measuring unit 400a and the object measuring the temperature by the second measuring unit 400b may be different from each other. Accordingly, the set values used for measuring or detecting the temperature in the first and second measuring units 400a and 400b may be different. That is, the set value used for temperature measurement in the first measurement unit 400a may be determined by the characteristics of the support 200 by the material, size, shape, etc. constituting the support 200 . In addition, the set value used for temperature measurement in the second measurement unit 400b may be determined by the characteristics of the substrate S by the material, size, shape, etc. constituting the substrate S.

In addition, the first and second measuring units 400a and 400b may be a means for easily measuring a temperature within a predetermined range or for measuring a temperature within a predetermined range. For example, the first and second measurement units 400a and 400b may be means capable of measuring a temperature of 100°C to 200°C.

For example, the first and second measuring units 400a and 400b may be non-contact thermometers. More specifically, the first and second measuring units 400a and 400b may be infrared radiation thermometers, and for example, a pyrometer (Radiation Pyrometer) that measures temperature using radiant energy generated from an object. It may be a means including a pyrometer). In addition, a set value used for temperature measurement in each of the first and second measurement units 400a and 400b may be emissivity. That is, the set value used to measure the temperature of the support 200 in the first measurement unit 400a may be, for example, the emissivity of the support 200, and in the second measurement unit 400b, the substrate S ) The set value used to measure the temperature may be, for example, the emissivity of the substrate (S).

Accordingly, the emissivity of the support 200 is set or stored in the first measurement unit 400a, and the first measurement unit 400a uses the infrared rays emitted from the support 200 and the emissivity of the support 200 to obtain a temperature. can be measured or detected. In addition, the second measuring unit 400b sets or stores the emissivity of the substrate S, and the second measuring unit 400b uses the infrared rays emitted from the substrate S and the emissivity of the substrate S to obtain a temperature. can be measured or detected. At this time, the support 200 and the substrate S may have different emissivities, and thus, the emissivity used for temperature measurement in the first measuring unit 400a and the second measuring unit ( 400b), the emissivity used for temperature measurement may be different.

In the above description, it has been described that the first and second measuring units 400a and 400b measure the temperature using the emissivity. However, the present invention is not limited thereto, and the first and second measuring units 400a and 400b may measure the temperature using a set value in which other characteristics of the support 200 and the substrate S are reflected in addition to the emissivity.

In addition, the first and second measuring units are not limited to pyrometers that measure the temperature using radiation energy generated from the object, and various means for measuring the temperatures of the support and the substrate in a non-contact manner may be applied. For example, it may be a means including an optical pyrometer for measuring a temperature using visible light emitted from an object using a red filter.

In addition, in the above description, each of the first and second measuring units 400a and 400b was described as a means capable of measuring a temperature of 100°C to 200°C. However, the above-described temperature of 100°C to 200°C is only an example for explanation, and the temperature measurable in the first and second measurement units 400a and 400b is not limited to 100°C to 200°C and may be variously changed. can That is, the first and second measuring units 400a and 400b may be provided as means capable of measuring a temperature in a predetermined range, for example, 200°C to 250°C, at 200°C or higher. As another example, the first and second measuring units 400a and 400b may be provided as a means for measuring a temperature in a predetermined range, for example, 0°C to 100°C at 100°C or less.

The first measuring unit 400a as described above may be a means for measuring the temperature to control the temperature of the support 200 before the substrate processing process, for example, the film forming process, and the second measuring unit 400b is the second measuring unit 400b during the film forming process. It may be a means for measuring the temperature in order to adjust the temperature of the support 200 to the process temperature.

The third measuring unit 400c measures the temperature in a different way from that of the first and second measuring units 400a and 400b, or measures a temperature in a relatively low range compared to the first and second measuring units 400a and 400b. It may be a means that can be easily measured. For example, the third measuring unit 400c may be a means capable of easily measuring a temperature of 100° C. or less, for example, a means including a thermocouple.

The temperature measured by the third measuring unit 400c is not limited to the above-described 100° C. or lower, and may vary depending on the temperature measurable by the first and second measuring units 400a and 400b. That is, the third measuring unit 400c may be provided to measure a temperature lower than the temperature measurable by the first and second measuring units 400a and 400b.

In addition, the third measuring unit 400c is not limited to a thermocouple, and any means may be used as long as it is a means capable of measuring a temperature lower than the temperature measurable by the first and second measuring units 400a and 400b. .

The third measurement unit 400c may be installed on the side wall of the chamber 100 to face the side surface of the support 200, for example, as shown in FIG. 1 . In addition, the third measurement unit 400c may be installed not to contact the support 200 or may be installed to be in contact with the support unit 200 .

The third measuring unit 400c may be a means for measuring a temperature in order to preliminarily heat the support 200 to a predetermined temperature when the operation of the substrate processing apparatus is stopped (off) and then operated (on) again. have. More specifically, when the substrate processing apparatus is operated again in a state where the temperature of the support 200 is lower than a predetermined temperature, for example, less than 100° C., the heating unit 300 according to the temperature measured by the third measuring unit 400c ) can be controlled. And when the temperature measured by the third measuring unit 400c reaches a predetermined temperature, for example, 100° C., thereafter, heating is performed according to the temperature measured by at least one of the first measuring unit 400a and the second measuring unit 400b. The operation of the unit 300 may be controlled.

In the above description, the third measuring unit 400c is installed in the chamber 100 to face the side surface of the support 200 , and the temperature of the support 200 is measured. However, the present invention is not limited thereto, and the third measuring unit 400c is installed in the chamber 100 so as to face the substrate S seated on the support 200 , and can measure the temperature of the substrate S. have. As a more specific example, the third measurement unit 400c may be installed on the side wall of the chamber 100 so as to face the side surface of the substrate S seated on the support 200 .

The control unit 500 is a means for controlling the operation of the heating unit 300 and controls the operation of the heating unit 300 according to the temperature measured by at least one of the first measuring unit 400a and the second measuring unit 400b. can be controlled More specifically, when the substrate S is not seated on the support 200 in the chamber 100 , the control unit 500 controls the operation of the heating unit 300 through the first measurement unit 400a. can be controlled And when the substrate S is seated on the support 200 in the chamber 100 , the control unit 500 may control the operation of the heating unit 300 through the second measurement unit 400b. In addition, when the substrate S is seated on the support 200 in the chamber 100, the control unit 500 controls the heating unit ( 300) may be controlled. Also, the control unit 500 may control the operation of the heating unit 300 according to the temperature measured by the third measuring unit 400c.

When the controller 500 controls the operation of the heating unit 300 , it may mean controlling the operation to increase or decrease the thermal energy generated from the heating unit 300 . More specifically, the control unit 500 may increase or decrease the thermal energy generated from the heating unit 300 by increasing or decreasing the power applied to the heating unit 300 .

As described above, the controller 500 may control the operation of the heating unit 300 according to the temperature measured by at least one of the first measuring unit 400a and the second measuring unit 400b. That is, before the substrate S is seated on the support 200 , the control unit 500 measures (first measurement) from the first measurement unit 400a disposed to face the outer area OA of the support 200 . The operation of the heating unit 300 may be controlled according to the temperature (hereinafter, referred to as the first measurement temperature) obtained in the first measurement step). And, when processing the substrate S seated on the support 200, the control unit 500 measures (first) from the second measurement unit 400b disposed to face the seating area SA of the support 200 2) It is possible to control the operation of the heating unit 300 according to the temperature (hereinafter, the second measurement temperature). In addition, in processing the substrate S seated on the support 200 , the control unit 500 controls the first measurement temperature measured by the first measurement unit 400a and the second measurement temperature measured by the second measurement unit 400b. It is also possible to control the operation of the heating unit 300 by using both the measured temperatures.

And, when the operation of the substrate processing apparatus is stopped (off) and then operated (on) again, the control unit 500 controls the temperature (hereinafter, the third measurement) measured by the third measurement unit 400c (the third measurement step). temperature), the operation of the heating unit 300 may be controlled. That is, when the operation of the substrate processing apparatus is stopped (off) and then operated (on) again, or when the temperature of the support 200 is less than a predetermined temperature, for example, 100° C., the control unit 500 first controls the third measurement unit ( By controlling the operation of the heating unit 300 using the temperature measured in 400c), the third measured temperature may be, for example, 100°C.

3 is a flowchart illustrating an operation of a substrate processing apparatus according to an exemplary embodiment of the present invention. Hereinafter, the operation of the substrate processing apparatus according to the embodiment of the present invention will be described in more detail with reference to FIG. 3 .

At this time, a case in which the temperature of the support is higher than or equal to a predetermined temperature, for example, 100°C or higher will be described as an example.

First, the heating unit 300 is operated (heating step) (S1). At this time, for example, when the operation of the heating unit 300 is in a stopped state, the heating unit 300 is operated again, and when it is in an operating state, the current state may be maintained. When the heating unit 300 operates, the inside of the chamber 100 and the support 200 may be heated by the heat generated from the heating unit 300 .

Then, the temperature of the support 200 is measured through the first measuring unit 400a (first measuring step) (S2), and the control unit 500 is the temperature measured by the first measuring unit 400a, that is, the first The operation of the heating unit 300 is controlled according to the measured temperature (S3). In this case, the control unit 500 may control the operation of the heating unit 300 by comparing the preset first temperature with the first measured temperature. That is, when the first measurement temperature is out of the first temperature, the control unit 500 increases or decreases the power applied to the heating unit 300, and when the first measurement temperature satisfies the first temperature, the control unit 500 may control the operation of the heating unit 300 in a way that maintains the power applied to the heating unit 300 .

Here, the first temperature may be in a predetermined temperature range, and may be a temperature close to a process temperature for forming a thin film on the substrate S or a process temperature.

Next, when the first measurement temperature reaches the first temperature, the substrate S is loaded into the chamber 100 to be seated on the support 200 (seating step) (S4). At this time, the substrate S may be heated by the heat of the support 200 , that is, the temperature may be raised (temperature raising step).

Then, when the preset reference time is reached from the time when the substrate S is seated on the support 200 ( S5 ), the second measurement unit 400b starts to measure the temperature (the second measurement step). In other words, when the reference time is reached from the point at which the substrate S is seated on the support 200, the means for measuring the temperature is provided from the first measuring unit 400a to the second measuring unit 400b. is changed to

In other words, when the reference time elapses from the time when the substrate S is seated on the support 200 , the subject controlling the operation of the heating unit 300 in the control unit 500 performs the second measurement. It is changed to the second measurement temperature measured by the unit 400b. That is, when the reference time becomes the reference time from the time when the substrate S is seated on the support 200 , the means for providing the temperature to the controller 500 to control the operation of the heating unit 300 is the first measurement. The part 400a is changed to the second measurement part 400b. Accordingly, the control unit 500 controls the heating unit 300 according to the first measurement temperature measured by the first measurement unit 400a in the section after the substrate S is seated on the support 200 until the reference time is reached. ), and when the reference time elapses, the operation of the heating unit 300 is controlled according to the second measurement temperature measured by the second measurement unit 400b.

At this time, the reference time is a time period determined by the time it takes for the substrate S to reach or rise to a predetermined temperature (hereinafter, second temperature) after the substrate S is seated on the support 200 . can In addition, this reference time may be determined through a plurality of tests before driving the substrate processing apparatus for the actual substrate processing process and set in at least one of the first and second measurement units 400a and 400b and the control unit 500 . have.

In addition, the second temperature may be a process temperature for forming a thin film on the substrate S, and the second temperature may be different from or the same as the first temperature. The first and second temperatures are not limited to the above-described temperature, and may be variously changed depending on the type of the substrate S, the type of film to be formed or grown, the type of gas injected from the injection unit 600, etc. .

For a more detailed description, a case where the reference time is 50 seconds will be described as an example. The second measurement unit 400b starts to measure the temperature at a time of 50 seconds from the time when the substrate S is seated on the support 200 . Accordingly, when the time reaches 50 seconds from the time when the substrate S is seated on the support 200, the second measurement temperature measured by the second measurement unit 400b is transmitted to the control unit 500, and the control unit 500 controls the operation of the heating unit 300 according to the second measurement temperature measured by the second measurement unit 400b. That is, the control unit 500 is heated according to the first measurement temperature measured by the first measurement unit 400a in the period before the reference time, that is, 50 seconds after the substrate S is seated on the support 200 . The operation of the unit 300 is controlled, and when it reaches 50 seconds, the operation of the heating unit 300 is controlled according to the second measurement temperature measured by the second measurement unit 400b.

In the above, the reference time has been described as an example of 50 seconds, but this is only an example for explanation, and the reference time may be variously changed according to the type, material, material, and thickness of the thin film to be formed, etc. of the substrate and support.

As described above, when the reference time is from when the substrate S is seated on the support 200, the control unit 500 controls the heating unit according to the temperature measured by the second measurement unit 400b, that is, the second measurement temperature. The operation of 300 can be controlled (S7). In this case, the control unit 500 may control the operation of the heating unit 300 by comparing the second measured temperature with the preset second temperature (S7). That is, when the second measurement temperature is out of the second temperature, the control unit 500 increases or decreases the power applied to the heating unit 300 , and when the second measurement temperature satisfies the second temperature, the control unit 500 . may control the heating unit 300 in a way that maintains the power applied to the heating unit 300 .

Next, when the second measurement temperature reaches the second temperature, a substrate processing process, for example, film formation is started (S8). To this end, a gas for film formation, for example, a gas for forming a SiC epitaxial layer, is injected through the injection unit 600 . In this case, the gas injected from the injector 600 may be a source gas including at least one of SiH ₄ and Si ₂ H ₆ and a reactive gas including SiH ₃ CH ₃ . At this time, the source gas and the reaction gas may be alternately injected through the injection unit 600 , and may be alternately injected over a plurality of times.

Thereafter, when the substrate processing process, that is, film formation is finished (S9), the substrate S is unloaded from the chamber 100 (S10). At this time, before the substrate S is taken out or after the film formation is finished, the subject controlling the operation of the heating unit 300 in the control unit 500 is changed to the first measurement temperature measured by the first measurement unit 400a. . More specifically, before the substrate S is separated from the support 200 , the subject controlling the operation of the heating unit 300 in the control unit 500 is changed to the first measurement unit (or the first measurement temperature). Accordingly, after the film formation is finished and before the substrate S is taken out, the control unit 500 controls the operation of the heating unit 300 according to the first measurement temperature transmitted from the first measurement unit 400a.

On the other hand, after the substrate S is separated from the support 200 and taken out of the chamber 100, the main body for controlling the heating unit 300 is changed to the first measurement unit 400a (or the first measurement temperature). In this case, an error may occur in the second measurement temperature measured by the second measurement unit 400b.

Specifically, after the substrate (S) is separated from the support (200), the substrate (S) is not supported on the support ( 200 ) until the unloading is completed, during which time the second measuring unit ( 400b ) is in a state. ) faces the seating area of the support 200 rather than the substrate S. At this time, since the set value for measuring the temperature of the substrate S, for example, the emissivity of the substrate S is set in the second measuring unit 400b, the second measuring unit 400b applies the emissivity of the substrate S. and output the measured temperature value. Accordingly, the temperature output or measured by the second measurement unit 400b may have a large deviation from the actual temperature of the support 200 . And when the control unit 500 controls the operation of the heating unit 300 according to the temperature measured by the second measuring unit 400b in this way, the support 200 is excessively heated or the temperature rapidly drops. may occur.

Therefore, in the embodiment, the subject controlling the operation of the heating unit 300 in the control unit 500 before the substrate S is separated from the support 200 is the first measurement unit 400a (or the first measurement temperature). change

Next, the substrate S is separated from the support 200 , and the substrate S is taken out of the chamber 100 ( S10 ). And in processing the new substrate (S), the above-described steps (S1-S10) can be repeated in the same way.

As described above, in the embodiment, the operation of the heating unit 300 is controlled according to the temperature measured by the first measuring unit 400a before the substrate S is seated on the support 200, and at least during the substrate processing process. The operation of the heating unit 300 is controlled according to the temperature measured by the second measuring unit 400b.

By controlling the operation of the heating unit 300 according to the temperature measured by the first measuring unit 400a before the substrate S is seated on the support 200 in this way, the substrate S on the support 200 is After being seated, the time for adjusting the substrate S to the process temperature can be shortened. In addition, when the substrate S is seated on the support 200 and the process is performed, the temperature of the substrate S may be measured more accurately by measuring the temperature through the second measuring unit 400b. And, by controlling the operation of the heating unit 300 according to the temperature measured by the second measuring unit 400b, it is easy to adjust or maintain the substrate S at the process temperature, and thus the It is possible to prevent the occurrence of defects in film formation depending on the temperature.

100: chamber 200: support
SA: seating area OA: outer area
300: heating unit 400a: first measuring unit
400b: second measurement unit 400c: third measurement unit
500: control unit 600: exhaust unit

Claims (8)

chamber;
a support installed in the chamber and including a seating area on which a substrate is mounted;
a first measuring unit installed on the upper part of the chamber to measure the temperature of the support;
a second measuring unit installed at the upper portion of the chamber to measure the temperature of the substrate seated on the support;
a heating unit installed on the lower side of the support; and
a control unit for controlling an operation of the heating unit according to the temperature measured by at least one of the first measuring unit and the second measuring unit; A substrate processing apparatus comprising a. The method according to claim 1
The support includes an outer area outside the seating area,
The first measuring part is installed on the upper part of the chamber to face the outer region,
The second measuring unit is installed on the upper portion of the chamber to face the seating area. The method according to claim 1,
The second measuring unit is installed to face the edge of the seating area on the opposite side of the gate provided in the chamber so that the substrate is loaded and unloaded. 4. The method according to any one of claims 1 to 3,
The control unit is
At least during the process of processing the substrate seated on the support, the operation of the heating unit is controlled according to the temperature measured by the second measuring unit,
A substrate processing apparatus for controlling an operation of the heating unit according to the temperature measured by the first measuring unit during at least a part of time other than the substrate processing process. 5. The method according to claim 4,
and a third measuring unit installed on a side surface of the chamber to measure a temperature of at least one of the inside of the chamber, the support, and the substrate. A heating step of operating a heating unit installed in the lower portion of the support located inside the chamber;
a first measuring step of measuring the temperature of the support using a first measuring unit;
a seating step of seating the substrate on the support when the support reaches a preset first temperature;
a second measuring step of measuring the temperature of the substrate seated on the support using a second measuring unit; and
and a control step of controlling the operation of the heating unit according to the temperature measured by at least one of the first measuring unit and the second measuring unit. 7. The method of claim 6,
The substrate processing method further comprising a temperature raising step carried out between the seating step and the second measuring step so that the temperature of the substrate becomes a preset second temperature. 7. The method of claim 6,
The heating step includes a third measuring step of measuring the temperature of at least one of the inside of the chamber, the support, and the substrate using a third measuring unit.

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