KR20210053348A - Multiplexed high TCR based ampoule heaters - Google Patents

Abstract

A system for heating components of a substrate processing system includes a controller and a plurality of heaters disposed at a plurality of locations along a path of fluid flow from a fluid source of the substrate processing system to a destination. The controller is configured to group the plurality of heaters into groups of the plurality of heaters. Each of the group of heaters includes at least one of a plurality of heaters. The controller is further configured to determine the amount of temperature change to be maintained across the plurality of heater groups. The controller is further configured to select the group of heaters from the groups of the plurality of heaters and to control the power supplied to the selected group of heaters to maintain a temperature variation across the groups of the plurality of heaters.

Description

Multiplexed high TCR based ampoule heaters

Cross reference to related applications

This application claims the benefit of U.S. Provisional Patent Application No. 62/735,464, filed September 24, 2018. The entire disclosure of the referenced application is incorporated herein by reference.

Technical field

The background description provided herein is for the purpose of generally presenting the context of the present disclosure. The achievements of the inventors named herein to the extent described in this background section, as well as aspects of the present technology, which may not otherwise be certified as prior art at the time of filing, are expressly or implicitly admitted as prior art to the present disclosure. It doesn't work.

TECHNICAL FIELD This disclosure relates generally to substrate processing systems, and more particularly to multiplexed high temperature coefficient of resistance (TCR) based ampoule heaters for substrate processing systems.

Substrate processing systems may be used to perform etching, deposition, and/or other processing of substrates such as semiconductor wafers. Examples of processes that may be performed on the substrate are, but are not limited to, CVD (Chemical Vapor Deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition), ALD (Atomic Layer Deposition), ALE (Atomic Layer Eetch), PEALD (Plasma Enhanced Atomic Layer Deposition) and/or other etching, deposition, and cleaning processes. During processing, the substrate is placed on a substrate support such as a pedestal, an electrostatic chuck (ESC), or the like of a processing chamber of a substrate processing system. A process gas mixture is introduced into the processing chamber to process the substrate. In some examples, the plasma may be striked to enhance chemical reactions within the processing chamber.

Gas supply lines supply gas mixtures to the processing chamber. If the temperature of the gas mixtures of the gas supply lines is not carefully controlled, condensation of the gas mixture may occur on the walls of the gas supply lines. Condensation of the gas mixture may cause defects and is often difficult to remove.

A system for heating components of a substrate processing system includes a controller and a plurality of heaters disposed at a plurality of locations along a path of fluid flow from a fluid source of the substrate processing system to a destination. The controller is configured to group the plurality of heaters into groups of the plurality of heaters. Each of the group of heaters includes at least one of a plurality of heaters. The controller is further configured to determine the amount of temperature change to be maintained across the plurality of heater groups. The controller is further configured to select the group of heaters from the groups of the plurality of heaters and to control the power supplied to the selected group of heaters to maintain a temperature variation across the groups of the plurality of heaters.

In other features, the controller is further configured to group the plurality of heaters into groups of the plurality of heaters based on the geometry of the components of the path of the fluid flow from the source of the fluid to the destination of the substrate processing system. Components include conduits and valves.

In other features, each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller is further configured to measure the resistances of the heaters in the selected group of heaters. The controller is further configured to determine the temperatures of the heaters of the selected group of heaters based on the resistances of the heaters of the selected group of heaters. The controller is further configured to control the power supplied to the selected group of heaters based on the determined temperatures and the amount of temperature change of the heaters in the selected group of heaters.

In other features, each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller is targeted for the heaters in the group of heaters selected based on the amount of temperature change to be maintained across the groups of the plurality of heaters. It is further configured to determine the temperature. The controller is further configured to determine target resistance values for the heaters in the selected group of heaters based on the target temperature for the heaters in the selected group of heaters. The controller is further configured to measure the resistances of the heaters in the selected group of heaters. The controller is further configured to control the power supplied to the selected group of heaters based on the measured resistances of the heaters in the selected group of heaters until the heaters in the selected group of heaters have target resistance values.

In other features, each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller includes a group of heaters selected from the groups of the plurality of heaters based on the amount of temperature change to be maintained across the groups of the plurality of heaters. It is further configured to determine target temperatures for the heaters within and for another group of heaters. The controller is further configured to determine target resistance values for the heaters in the selected group of heaters and for the heaters in another group of heaters based on the target temperature for the heaters in the selected group of heaters. The controller is further configured to determine a ratio between resistance values targeted for heaters in the selected group of heaters and resistance values targeted for heaters in another group of heaters. The controller is further configured to measure the resistances of the heaters in the selected group of heaters. The controller is based on the measured resistances of the heaters in the selected group of heaters to maintain a ratio between the target resistance values for the heaters in the selected group of heaters and the target resistance values for the heaters in another group of heaters. It is further configured to control the power supplied to the selected group of heaters.

In other features, the system further includes a temperature sensor configured to sense the temperature of the fluid within the source. The controller is configured to stop the system when the temperature is higher than the first threshold value or lower than the second threshold value, to ensure that the system operates when the temperature is between the first threshold value and the second threshold value, The first threshold value is greater than the second threshold value.

In other features, the system further includes a current sensor for sensing the current supplied to each of the plurality of heaters. The controller is further configured to determine a resistance of each of the plurality of heaters based thereon.

In other features, the system further includes a voltage sensor for sensing a voltage supplied to each of the plurality of heaters. The controller is further configured to determine a resistance of each of the plurality of heaters based thereon.

In other features, the system includes a driver for driving a selected group of heaters based on the duty cycle; And a resistance estimator for estimating resistances of the group of heaters based on the duty cycle. The controller is further configured to determine the temperatures of the selected group of heaters based on the resistances.

In other features, the controller is further configured to provide a gradual heating profile across the groups of heaters from the source of the fluid to the destination. The destination includes a processing chamber for processing a semiconductor substrate in a substrate processing system.

In still other features, a system for heating components of a substrate processing system includes an oven for surrounding one or more components of the substrate processing system and maintaining a predetermined temperature within the oven. The system further includes a plurality of heaters disposed within the oven to heat one or more components of the substrate processing system. The plurality of heaters include non-insulated resistive heaters. The system further includes a controller, the controller configured to group the plurality of heaters into groups of the plurality of heaters. Each of the group of heaters includes at least one of a plurality of heaters. The controller maintains the temperature variation across the groups of the plurality of heaters and selects a group of heaters from the groups of the plurality of heaters at a time to maintain a predetermined temperature in the localized regions of the oven. It is configured to control the power supplied to it.

In other features, the system further includes a temperature sensor located remotely from the plurality of heaters to sense the temperature in the oven. The oven includes a heating element. The controller is further configured to determine an average temperature of the oven based on the sensed temperature to maintain the predetermined temperature, and to control the heating element of the oven based thereon.

In another feature, the predetermined temperature is the ambient temperature.

In other features, each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller is further configured to measure the resistances of the heaters in the selected group of heaters. The controller is further configured to determine the temperatures of the heaters of the selected group of heaters based on the resistances of the heaters of the selected group of heaters. The controller is further configured to control the power supplied to the selected group of heaters based on the determined temperatures and the amount of temperature change of the heaters in the selected group of heaters.

In other features, each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller is targeted for the heaters in the group of heaters selected based on the amount of temperature change to be maintained across the groups of the plurality of heaters. It is further configured to determine the temperature. The controller is further configured to determine target resistance values for the heaters in the selected group of heaters based on the target temperature for the heaters in the selected group of heaters. The controller is further configured to measure the resistances of the heaters in the selected group of heaters. The controller is further configured to control the power supplied to the selected group of heaters based on the measured resistances of the heaters in the selected group of heaters until the heaters in the selected group of heaters have target resistance values.

In other features, each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller includes a group of heaters selected from the groups of the plurality of heaters based on the amount of temperature change to be maintained across the groups of the plurality of heaters. It is further configured to determine target temperatures for the heaters within and for another group of heaters. The controller is further configured to determine target resistance values for the heaters in the selected group of heaters and for the heaters in another group of heaters based on the target temperature for the heaters in the selected group of heaters. The controller is further configured to determine a ratio between resistance values targeted for heaters in the selected group of heaters and resistance values targeted for heaters in another group of heaters. The controller is further configured to measure the resistances of the heaters in the selected group of heaters. The controller is based on the measured resistances of the heaters in the selected group of heaters to maintain a ratio between the target resistance values for the heaters in the selected group of heaters and the target resistance values for the heaters in another group of heaters. It is further configured to control the power supplied to the selected group of heaters.

In another feature, the ratio is determined at a predetermined temperature.

In another feature, the controller is further configured to adjust the ratio to provide gradual heating across the plurality of heater groups.

In other features, the controller is further configured to group the plurality of heaters into groups of the plurality of heaters based on the geometry of the one or more components. Components include conduits and valves in the path of fluid flow from a source of fluid to a process chamber of a substrate processing system.

Areas of further applicability of the present disclosure will become apparent from the detailed description, claims and drawings. The detailed description and specific examples are intended for purposes of illustration only, and are not intended to limit the scope of the present disclosure.

The present disclosure will be more fully understood from the detailed description and the accompanying drawings.
1A is a functional block diagram of an example of a substrate processing system according to the present disclosure.
1B illustrates an example of a multi-tray vaporized precursor delivery system according to the present disclosure.
2A-2D are functional block diagrams of examples of heating systems according to the present disclosure.
3 is a graph illustrating temperature as a function of length along a gas flow path to a processing chamber.
4 illustrates an example of a heater zone including a thermocouple.
5 and 6 are graphs illustrating temperature as a function of length along a gas flow path in a zone.
7 and 8 are flowcharts illustrating examples of methods for controlling the temperature of components along a gas flow path using a plurality of heater zones heated in a multiplexed manner in accordance with the present disclosure.
9 is a functional block diagram of a heating system including an oven surrounding a gas flow path and non-insulated TCR heaters disposed in one or more locations.
10 is a flowchart of a method for operating the heating system of FIG. 9;
In the drawings, reference numbers may be reused to identify similar and/or identical elements.

Condensation in the gas line can be mitigated using various heating schemes. For example, gradual heating may be used to overcome condensation hazards in gas lines. However, the temperature measured at one location along the gas line using a thermocouple does not capture load-based changes across the entire heater zone. Pressure transitions and/or load changes due to expansions, valves, etc. can cause localized temperature changes. Additionally, tubes/heaters designed for one application are often used for another application, and the temperature distribution may vary. If the thermocouple is placed in the pressure drop/expansion position, the thermocouple will sense a low temperature, and the gas line may be heated to a higher temperature than the target. If the thermocouple is placed away from the pressure drop, localized cooling may occur. One possible solution is to increase the number of heater zones. However, this approach adds cost and durability issues due to more connections. Instead, two different heating schemes: gradual heating in which each of the heater zones is individually controlled; Alternatively, multiplexed heating, in which a group of heater zones is controlled at once, and several groups of heater zones are controlled using multiplexed control, can be used to solve the above problems. Each heating scheme is described below.

In gradual heating, heating systems for gas delivery systems use a heater comprising a heater element made of a temperature coefficient of resistance (TCR) material. In some examples, the heater element has a high TCR of greater than 0.001 ppm/°C. For example only molybdenum or tungsten (W) heater elements may be used. In other examples, the heater element has a lower TCR of less than 0.001 ppm/°C. For example only copper or nickel can be used. Throughout this disclosure, heater elements are also referred to as TCR heater elements, TCR heaters, or resistive heaters. The resistance of the TCR heater can be measured to provide an average temperature to the heater zone. A controller may be used to correlate resistance to temperature using a lookup table or formula. The temperature can also be monitored in each of the zones using a thermocouple (TC) to provide a localized temperature (indicating the point location of the heater zone). In some examples, the TC may be located at the start or end position of the heater zone and measure the temperature sensed at that position. The combination of primary control and secondary override/monitoring may be performed using feedback from the TCR heater and TC of each of the heater zones.

In a first approach, the temperature sensed by the TC can be used as a control set point for the heater zone, and the average temperature sensed by the TCR heater can be used as a monitor/override. When the average temperature of the heater zone falls below a certain value or exceeds a certain value, the controller can use the default duty cycle. Acceptable ranges of average values may be assigned on a heater zone basis to incrementally cascade or monotonically rise along the gas flow path. In some examples, TCR heaters use high TCR elements. In other examples, TCR heaters use low TCR elements because the average value is used as a safety check/override.

In the second approach, the average temperature sensed by the TCR heater can be used as a control variable. The entire heater zone may be heated to a higher temperature if there is a local temperature drop due to expansion-related cooling in one section of the heater zone. In some examples, the local TC can be placed close to the expansion points to monitor and override if necessary. If there is cooling at the location monitored by the local TC, a limit stop can be triggered and heat can be preemptively added.

In both methods, the average temperature ensures gradual heating. Local temperature measurements from local TC enable the heating system to react to local changes. The control systems described above prevent overreaction by the heating system, which may cause overheating in the heater zones. In some examples, fewer heater zones may be used to cover larger areas. In other examples, TCs may be placed only in the expected expansion zones to address certain condensation hazards, while the rest of the heating zone is part of a single large zone.

While the methods recognize that the temperature distribution changes due to pressure transitions, they do not particularly take into account the phase change that may occur as the fluid level changes. For example, if a temperature is sensed at a location, the sensed temperature will not represent a phase change that may occur upstream or downstream from that location. Thus, supplying heat to the location based on the sensed temperature may cause a shortage of supply of heat to the zone covered by the location.

The present disclosure proposes multiplexed heating, which solves the problem of poor temperature response to phase change with fewer TCs/zones. According to the multiplexed heating scheme, if a phase change is detected anywhere across the zone, i.e. if the zone is struggling to maintain the temperature, then the temperature of the zone can be corrected regardless of where the temperature drops in that zone. Conversely, in other heating schemes, if the TC is used to sense the temperature at a specific location, the TC may miss a location or locations in the vicinity of the TC where heat loss occurs.

Generally, the phase change occurs in a narrow area. Within a narrow area, if the temperature drops at a specific location, there is no way to detect the temperature change at that location unless the TC is placed at that location. However, it can be impractical to install TCs in numerous locations. Instead, according to the present disclosure, the zone may be configured to cover a general region in which a phase change is expected, as opposed to configuring a zone at a specific location or point where temperature is sensed. A zone configured to cover a general area will detect a phase change within that zone, regardless of where a phase change occurs in that zone.

Typically, the ampoule supplying the vaporized precursor has 2 to 4 zones (e.g., one heater zone for each of the ampoule's body, lid, and valve; or in some cases, two Heater zones). Conventional ampoules have a significant heat transfer area in which a phase change due to evaporation from liquid or solid to vapor usually occurs. In other vaporized precursor delivery systems (see, for example, an example of a system comprising a plurality of trays shown in FIG. 1B ), there may be multiple locations where a phase change occurs. As mentioned above, especially as the fluid level changes, the temperature response to a phase change can be poor with fewer TCs/zones. Also, installing multiple TC/zones can be impractical from a cost and complexity standpoint using conventional controls.

The present disclosure proposes to use a multi-zone heater array composed of high TCR elements having a plurality of nodes. Instead of controlling each of the heaters independently, the present disclosure proposes to multiplex a plurality of nodes. Initially, the use of high TCR materials to sense and control heaters for progressive heating applications is described below. Thereafter, the use of TCR based controls extends to a multiplexed multi-zone heating system especially applied to fluid delivery systems.

As detailed below, the heater zones are grouped in the form of an assumed grid-like structure, with a fixed number of nodes in each of the rows and columns of the grid-like structure. That is, the heater zones are not actually arranged in a grid manner, but are assigned to different groups, where each group is considered a row of an array. Heaters of each row are controlled one row at a time together (ie collectively) so that the amount of temperature change can be established and controlled across the rows. As opposed to controlling each node individually, by controlling a group of nodes in one row at a time, the number of control points is reduced. The selection and grouping of nodes in rows is dependent on the geometry of the heating system. The supply path from the point of exit from the ampoule to the point of entry into the process chamber can be divided into several quadrants. Each quadrant may include a plurality of nodes (ie, TCR heaters). Each of the quadrants can be controlled as a row so that the amount of temperature change can be established and controlled across the rows.

The temperatures of the nodes (eg, in a row) in the group can be measured by measuring the resistance values of the TCR elements installed in the nodes. Based on the measured temperatures of the nodes in the group, the heat supplied to the nodes in the groups can be controlled. Groups of nodes can be controlled in turn or in any order to provide an amount of temperature variation across the groups. For example, the heat supplied to the group of nodes may increase as the distance of the group of nodes increases from the ampoule. Thus, the control variable is essentially the temperature calculated from the measured resistance values of the TCR elements of the group of nodes. The heating of the nodes can then be controlled by measuring the temperatures of the group of nodes and controlling the heat supplied to the group of nodes based on the measured temperatures of the nodes in the group one group at a time. Also, based on the temperature measurements, a temperature range for a group of nodes may be determined. Based on the temperature range, grouping of nodes, control of each of the groups of nodes (ie, heat supply), or both can be managed. Due to the grouping of nodes and group-based heating control of nodes in a multiplexed manner, heating can account for a phase change that may occur at locations between nodes.

The amount of temperature change across groups of nodes can be used to define target resistance values for each of the heaters in the row to be achieved through control. For example, assuming that the temperature from the first group of nodes to the last group can be varied from X to Y °C, Y> X, and Z °C per row, Z is the difference between Y and X. It is equal to the value divided by the number of fields. Based on the target temperature or set point for each row, the target resistance values of the TCR elements of each row can be known/determined (from the temperature-resistance characteristics of the TCR elements). The heat supplied to the TCR elements in each of the rows can then be controlled to achieve/maintain a target resistance value (and consequently a target temperature set point). Alternatively, the amount of temperature change may be used to define a ratio of the resistance values of the TCR elements of one row to the resistance values of the TCR elements of another row to be achieved through the heating control. Here, for each row, resistance values of all nodes in the row may be averaged. Again, the ratio of the averaged resistance values of the TCR elements between the two rows can be known/determined based on the target temperatures (i.e. set points) for the two rows, and the set point for the two rows. The heat supply to the TCR elements in two rows can be controlled so that the desired relationship between them can be achieved/maintained.

Some form of cooling offset/ratio calculation can be included in the control to account for manufacturing variations of the heaters. For example, TCR elements may be calibrated in situ to account for the interfacial loss (eg, due to air gaps between the TCR elements and the material of the nodes where the TCR elements are installed). In addition, the TC in contact with the fluid (generally available as ampoules) can serve as a reference for the calibration of the TCR elements (temperature-resistance calibration). In addition, TC can also be used to set a minimum temperature across the ampoule, which can also act as an overheat/safety feature.

Accordingly, the present disclosure relates to the use of multiplexing with high TCR heaters and specifically targeting the multiplexing to set a ratio of resistances to control the amount of temperature change across groups of heaters. The present disclosure also relates to the use of multiplexing to control the amount of temperature change for systems using multi-surface ampoules. The present disclosure also relates to the use of multiplexing to process areas of phase change and to achieve gradual heating despite changing fluid levels. These and other aspects of the present disclosure are now described in detail.

1A shows an exemplary substrate processing system 20. For illustrative purposes, a processing chamber for Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) using Capacitively Coupled Plasma (CCP) is shown, but any other type of substrate processing system may be used. The substrate processing system 20 includes a processing chamber 22 that surrounds the other components of the substrate processing system 20 and contains (if used) an RF plasma. The substrate processing system 20 includes an upper electrode 24 and a substrate support 26 such as an electrostatic chuck (ESC), pedestal, and the like. During operation, the substrate 28 is placed on the substrate support 26.

For example only, the upper electrode 24 may include a gas distribution device 29 such as a showerhead that introduces and distributes process gases. The gas distribution device 29 may include a stem portion comprising one end connected to an upper surface of the processing chamber. The base portion is generally cylindrical and extends radially outward from the opposite end of the stem portion at a location spaced from the top surface of the processing chamber. The substrate-facing surface, or facing plate, of the base portion of the showerhead 29 contains a plurality of holes, through which precursors, reactants, etching gases, inert gases, carrier gases, and other process gases Or purge gas flows. Alternatively, the upper electrode 24 may comprise a conductive plate, and process gases may be introduced in another way.

The substrate support 26 includes a base plate 30 serving as a lower electrode. The base plate 30 supports a heating plate 32, which may correspond to a ceramic multi-zone heating plate. A heat-resistant layer 34 may be disposed between the heating plate 32 and the base plate 30. The baseplate 30 may include one or more channels 36 for flowing coolant through the baseplate 30.

When plasma is used, the RF generation system 40 generates an RF voltage and outputs it to one of the upper electrode 24 and the lower electrode (e.g., the base plate 30 of the substrate support 26). The other one of the upper electrode 24 and the base plate 30 may be DC grounded, AC grounded, or floating. For example only, the RF generation system 40 may include an RF power generator 42 that generates RF power that is fed to the top electrode 24 or baseplate 30 by the matching and distribution network 44. have. In other examples, the plasma may be generated inductively or remotely.

The gas delivery system 50 comprises one or more gas sources 52-1, 52-2, ..., and 52-N (collectively gas sources 52), where N is an integer greater than zero. to be. The gas sources 52 include primary valves 54-1, 54-2, ..., and 54-N (collectively the main valves 54), mass flow controllers (MFC). (56-1, 56-2, ..., and 56-N) (collectively MFCs 56), and/or connected to the manifold 60 by auxiliary valves (not shown). Although a single gas delivery system 50 is shown, two or more gas delivery systems may be used.

A temperature controller 63 is connected to a plurality of resistive heaters 64 disposed on the heating plate 32. The temperature controller 63 may also be connected to one or more thermocouples 65 in the heating plate 32. The temperature controller 63 may be used to control the plurality of resistive heaters 64 to adjust and control the temperature of the substrate support 26 and the substrate 28. In some examples, a vapor delivery system 67 supplies vapor to the processing chamber.

In some examples, temperature controller 63 and/or another controller may also communicate with coolant assembly 66 to control coolant flow through channels 36. For example, the coolant assembly 66 may include a coolant pump, a reservoir, and/or one or more thermocouples. In some examples, temperature controller 63 operates coolant assembly 66 to selectively flow coolant through channels 36 to cool substrate support 26. Valve 70 and pump 72 may be used to evacuate reactants from processing chamber 22. System controller 80 may be used to control the components of substrate processing system 20.

1B shows an example of a vaporized precursor delivery system 100 that supplies a vaporized precursor to a processing chamber (eg, processing chamber 22 of FIG. 1A) for processing substrates such as semiconductor wafers. In some examples, a flow control device 106 such as a valve, restricted orifice, or MFC may be used to control the supply of vaporized precursor to the process chamber 22.

The vaporized precursor delivery system 100 includes an enclosure 108 and a tray assembly 110 disposed within the enclosure 108. The tray assembly 110 includes a plurality of trays 112-1, 112-2, ..., and 112-N (collectively trays 112). Each of the trays 112 has openings 114-1, 114-2, ..., and 114-N (collectively openings 114) to provide a mounting location for connection to the support member 120. It can also be included. Alternatively, the support member 120 can be omitted, and alternative support mechanisms can be used. For example, the trays 112 may be supported by the sides of the enclosure 108 (e.g., using slots or protrusions), or spacers between the edges of the trays 112 may be Can be used. The sides of the trays 112 are open to allow the carrier gas to flow freely between them. For example, the trays 112 may have a circular, square, rectangular, uniform, non-uniform, or other shaped cross-section. The trays 112 may be arranged in a stacked, evenly spaced arrangement to allow the carrier gas to flow freely across the liquid precursor. Each of the trays 112 defines a volume for receiving and storing a liquid precursor. In some examples, the support member 120 and trays 112 may be made of a thermally conductive material such as stainless steel, aluminum, or other material that allows heat transfer.

The liquid precursor storage tank 130 supplies the liquid precursor to the trays 112 through a valve 134 and one or more conduits 140. Gravity, a pump, or an inert push gas such as helium may be used to raise the line pressure. The conduit 140 may pass through the openings of each of the trays 112. The openings 142-1, 142-2, ..., and 142-N in the conduit 140 are configured to supply a liquid precursor to each of the trays 112-1, 112-2, ..., and 112-N, respectively. Is placed.

Liquid precursor storage tank 130 may be periodically filled by bulk storage tank 150 using valve 152 and conduit 154. The carrier gas 162 may be supplied by one or more valves and/or mass flow controllers (MFCs) 164 and conduit 166. Conduit 166 includes one or more restricted openings or sets of restricted openings configured to direct a carrier gas across each of the trays 112. Each of the sets of openings may include a plurality of openings that provide a carrier gas flow in a plurality of directions. The openings 170-1, 170-2, ..., and 170-N in the conduit 166 convey a carrier gas flow over the trays 112.

In some examples, the heater 180 may be used to indirectly heat the support member 120, which transfers heat to the trays 112 and the liquid precursor in the trays 112. Alternatively, a heater may be arranged inside the support member. In some examples, the one or more vibration devices 184 individually vibrate the support member 120 (as shown) or each of the trays 112-1, 112-2, ..., and 112-N. It can also be used to impart.

The controller 190 may be used to control one or more of the valves of the vaporized precursor delivery system 100. For example, the controller 190 may control the flow control device 106 to adjust the amount of vaporized precursor delivered to the process chamber 22. The pressure sensor 196 provides pressure feedback to the flow control device 106 and a controller 190 that controls one or more valves and/or MFCs 164. The controller 190 may be connected to one or more level sensors 194 to sense the level of the liquid precursor of one or more of the trays 112. Based on the sensed level of the liquid precursor of one or more of the trays 112, the controller 190 may be used to control the valve 134 to supply additional liquid precursor. Controller 190 may be used to control one or more valves and/or MFCs 164 to regulate the flow of carrier gas across trays 112. The controller 190 may be connected to one or more level sensors 198 to sense the level of the liquid precursor in the liquid precursor storage tank 130. Based on the sensed level of the liquid precursor storage tank 130, the controller 190 may be used to control the valve 134 to supply additional liquid precursor to refill the liquid precursor storage tank 130.

FIG. 2A shows a heating system for a vapor delivery system according to the present disclosure (eg, element 67 shown in FIG. 1A or element 100 shown in FIG. 1B ). The heating system shown in FIG. 2A includes an ampoule 200 for supplying a vaporized precursor, but the heating system can heat other components of the substrate processing system. A temperature sensor 214 (eg, a thermocouple) monitors the temperature of the precursor. A heater 218 is used to heat the liquid precursor based on the sensed temperature and the target temperature. The controller 80 or another controller may be used to monitor the temperature sensor 214 and control the heater 218 based on the measured temperature and a target temperature.

Valves V214, V205 and V213 selectively supply a carrier gas or a mixture of a carrier gas and a vaporized precursor into a gas flow path. Additional valves V220, V206A, V206B, V71, V55, V79, V65, V164, and V207 are provided to allow control of gas flow along various gas flow paths. A plurality of heater zones (250-1, 250-2, …, 250-N) (collectively heater zones 250) (where N is an integer greater than 1) gas lines, valves along these gas flow paths And/or other components.

2B shows an exemplary arrangement of heater zones 250. For example, heater zones 250 may be grouped in the form of a plurality of rows (eg, R1, R2, R3, and R4). For example, the first row (e.g., R1) may contain the heater zones 250 closest to the ampoule 200, and the last row (e.g., R4) is the furthest from the ampoule 200. It may include heater zones 250 (ie, closest to the processing chamber 22). Each of the heater zones 250 may include a TCR heater 283. Using the multiplexed control scheme implemented by the selector 286 under the control of the controller 280 (shown in FIGS. 2C and 2D and described below), the heater zones 250 are in the first row (e.g. , R1) to the last row (e.g., R4) can be controlled one row at a time to maintain a gradually increasing amount of temperature change.

2C shows a controller 280 that may be used with a selector 286 to control the operation of the heater zones 250. The heater driver 282 may be used to power the TCR heaters 283 in the selected row under the control of the controller 280. Current sensors 288 may be used to sense the current supplied to TCR heaters by heater driver 282. Voltage sensors 290 may be used to sense the voltage supplied to TCR heaters by heater driver 282.

2D shows that the controller 280 monitors the duty cycles of the heater zones 250 and uses the resistance estimator 294 to estimate the resistance of the heater zones 250 based on the corresponding duty cycle. In this example, it is assumed that the voltage or current is a constant value, and that the duty cycle of the current or voltage is variable. That is, the controller 280 estimates the resistance based on a known voltage or current and a duty cycle for the current or voltage. Thus, in this example, current sensors 288 and voltage sensors 290 are omitted.

2C and 2D, the controller 280 controls the TCR heaters 283 in the heater zones 250 as follows. Controller 280 uses selector 286 to select a row of heater zones 250 (eg, any row R1, R2, etc. shown in FIG. 2B). The heater driver 282 is used to power the TCR heaters 283 in the selected row of heater zones 250.

The controller 280 collectively controls the TCR heaters 283 of the selected row so that the amount of temperature change can be established and controlled across the rows. By controlling the TCR heaters 283 of one selected row at a time, the number of control points is reduced. The controller 280 performs selection and grouping of the heater zones 250 into rows according to the geometry of the heating system. For example, the geometry may include the distance of the length of the path between the ampoule 200 and the processing chamber 22, the number of valves and the size and shape of conduits in the path, and the like. In the case of the system 100 shown in FIG. 1B, the geometry may also include multiple trays 112, for example. Accordingly, one group (ie, row) of heater zones may include fewer heater zones than another group (ie, row). The controller 280 may dynamically reallocate the heater zones from one row to another to maintain the desired amount of temperature change (ie, may regroup the heater zones of the rows).

The controller 280 measures the temperatures of the heater zones 250 of the group (eg, one row) by measuring the resistance values of the TCR heaters 283. Based on the measured temperatures of the heater zones 250 of the group (eg, one row), the controller 280 controls the heat supplied to the heater zones 250 of the group, one group at a time. The controller 280 may control the groups of heater zones 250 in turn or in any other order to provide an amount of temperature change across the groups. For example, in the example shown in FIG. 2B, the controller 280 may be in R1, then R2, then R3, then R4, or in any other order, such as R1 then R3 then R2 then R4, R1 then R3 then R4 then R2. As such, it is also possible to control the heater zones 250 of rows R1 to R4 in the order of R1 then R4, then R2, then R3, or R1 then R4 then R3 then R2, and so on.

For example, the controller 280 can increase the heat supplied to the group of heater zones 250 as the distance of the group of heater zones 250 increases from the ampoule 200. Further, based on the temperature measurements, the controller 280 can determine a temperature range for the group of heater zones 250. Based on the temperature range, the controller 280 can control the grouping of heater zones 250, heat supply to each of the group of heater zones 250, or both. Due to the group-based heating of the heater zones 250 in a multiplexed manner, the heating can account for a phase change that may occur at locations between the heater zones 250.

Controller 280 can use the amount of temperature change across groups of heater zones 250 to define target resistance values for TCR heaters 283 in each row to be achieved through control. Based on the target temperature or set point for each of the rows of heater zones 250, the target resistance values of the TCR heaters 283 of each row are known (from the temperature-resistance characteristics of the TCR heaters 283). /Can be determined. The controller 280 can then control the heat supply to the TCR heaters 283 in each of the rows to achieve/maintain a target resistance value (and consequently a target temperature set point).

Alternatively, the controller 280 uses the amount of temperature change to define the ratio of the resistance values of one row of TCR heaters 283 to the resistance values of another row of TCR heaters 283 to be achieved through heating control. I can. For each row, the controller 280 can average the resistance values of all TCR heaters 283 in the row. The controller 280 can determine the ratios of the averaged resistance values of the TCR heaters 283 between the two rows based on the target temperatures (ie, set points) for the two rows. The controller 280 can then control the heat supply of the two rows to the TCR heaters 283 so that a desired relationship between the set points for the two rows can be achieved/maintained.

The controller 280 uses the TC 214 in contact with the fluid in the ampoule 200 as a reference for calibration (temperature-resistance calibration) of the TCR heaters 283. For example, the controller 280 can be used to account for interfacial losses (e.g., due to air gaps between the material of the nodes where the TCR heaters 283 and the TCR heaters 283 are installed) to account for the in-situ TCR heater. The s 283 may be calibrated. In addition, the controller 280 can also use the TC 214 to set the minimum temperature across the ampoule 200, which can act as an overheat/safety feature.

3 shows a graph illustrating the ideal temperature as a function of length along the gas flow path to the processing chamber (eg, from ampoule 200 to processing chamber 22). In some applications, it is desirable for the temperature of the gas flow path to rise monotonically as the gas traverses the plurality of heater zones 250. If the temperature drops, condensation can occur. In Fig. 3, the ideal temperature characteristic is shown as a straight line with a positive slope. However, in practice, the temperature of the gas flowing through the gas flow path is less ideal due to local cooling or heating. For example, the gas cools as it flows through the pressure drop/expansion locations.

4 illustrates an example of the heater zone 400. The heater zone 400 includes a first gas line 410 connected to a second gas line 420 at a node 430 located adjacent to a bend/fitting 434. The insulated heater 440 includes an insulating material 442 and a heater element 444. The heater zones 250 according to the present disclosure do not use thermocouples. However, in order to recognize the improvements provided by the multiplexed heating scheme of the present disclosure, it is good to note that when used, thermocouples can monitor the temperature of each of the heater zones. For example, thermocouple TC is the first position TC _p1 Alternatively, it may be placed in the second position TC _p2. However, different temperature control characteristics will occur depending on the selected location of the thermocouple TC.

5 and 6 show graphs illustrating temperature as a function of length along a gas flow path in a zone. In Fig. 5, the target temperature profile rises monotonically from one end of the zone to another. However, in FIG. 6, the temperature may drop due to pressure drop/expansion locations. How the temperature is controlled will vary depending on where the thermocouple is located. Controlling the heat when the thermocouple is placed behind the pressure drop/expansion locations (eg TC _p2 ) will cause a higher overall temperature and may lead to temperature drops in other zones that follow. Controlling the heat when the thermocouple is placed in front of the pressure drop/expansion locations (eg TC _p1 ) will cause a lower overall temperature and may lead to a temperature drop in the heater zone.

7 is a flowchart of a method 700 for controlling the temperature of a gas flow path between an ampoule (eg, ampoule 200) and a processing chamber (eg, processing chamber 22). The method 700 uses a plurality of TCR heaters (eg, TCR heaters 283) disposed in heating zones (eg, heater zones 250) along a gas flow path. Method 700 is performed by a controller (eg, controller 280). Method 700 heats groups of heater zones in a multiplexed manner as follows.

At 702, method 700 forms groups of heater zones, and the grouping of heater zones is based on the geometry of the heating system. At 704, based on the number of groups of heater zones and the temperature range targeted for the heating system (i.e., for the path from the ampoule to the processing chamber), the method 700 The temperature set points for each group of heater zones are determined to maintain the variation. At 706, method 700 measures the resistances of heaters in a group of heater zones. At 708, based on the resistance measurements, the method 700 determines the temperatures of the heater zones in the group.

At 710, the method 700 determines whether the average temperature of the heater zones within the group is less than or equal to a set point for the group of heater zones. Alternatively, method 700 determines whether the temperature of at least one heater zone in the group is below a set point for the group of heater zones. The method 700 returns to 706 if the temperature of the at least one heater zone or the average temperature of the heater zones in the group is higher than the set point for the group of heater zones.

At 712, if the temperature of the at least one heater zone or the average temperature of the heater zones in the group is less than or equal to the set point for the group of heater zones, the method 700 is to increase the temperature of the group of heater zones. Supply power. At 714, the method 700 determines whether the temperature of the heater zones in the group is equal to the set point temperature for the group. Method 700 returns to 706 if the temperature of the heater zones in the group is equal to the set point for the group. The method 700 returns to 712 if the temperature of the heater zones in the group is not equal to the set point temperature for the group.

8 is a flowchart of another method 800 for controlling the temperature of a gas flow path between an ampoule (eg, ampoule 200) and a processing chamber (eg, processing chamber 22). The method 700 uses a plurality of TCR heaters (eg, TCR heaters 283) disposed in heating zones (eg, heater zones 250) along a gas flow path. Method 800 is performed by a controller (eg, controller 280). Method 800 heats groups of heater zones in a multiplexed manner as follows.

At 802, method 800 forms groups of heater zones, and the grouping of heater zones is based on the geometry of the heating system. At 804, based on the number of groups of heater zones and the temperature range targeted for the heating system (i.e., for the path from the ampoule to the processing chamber), the method 800 The temperature set points for each group of heater zones are determined to maintain the variation.

At 806, based on the set points, the method 800 defines target ratios of the resistance values of the first group of heaters to the resistance values of the second group of heaters. To determine the target ratios, the method uses the average resistance values of each of the heaters in the group. At 808, the method 800 measures the resistances of the heaters in each of the first group and the second group of heater zones and calculates average values of the resistances of the heaters in each of the group of heater zones.

At 810, the method 800 determines whether the ratio of the average measured resistance values of the first group and the second group of heaters is equal to the target ratio for the first group and the second group. The method goes back to 808 if the ratio of the average measured resistance values of the first group and the second group of heaters is equal to the target ratio for the first group and the second group. At 812, if the ratio of the measured average resistance values is not equal to the target ratio, the method 800 supplies power to the group of heaters causing the resistances of the heaters to change and the ratio of the average measured resistance values to deviate from the target ratio. The supplied power heats the group of heaters until the average measured resistance values are equal to the target ratio, when the method 800 ceases to supply power to the group of heaters.

9 shows a heating system 900 for a gas delivery system including an oven 910 surrounding one or more components of the substrate processing system. In some examples, the components include components of a gas delivery system and/or a gas flow path. Thermocouple 920 and one or more oven heating elements 922 may be disposed within oven 910 and are used to maintain an average temperature inside oven 910.

As described above, local cooling and/or heating of components within the substrate processing system may occur. For example, gas lines may experience localized cooling due to factors such as gas expansion through fittings, valves, etc. and additionally due to phase changes. While the oven maintains the average temperature in the oven, the TCR heaters 940-1, 940-2, ..., and 940-R (collectively TCR heaters 940), where R is an integer greater than 1 ) These temperature fluctuations (such as cooling) and phase changes are arranged in groups (eg on parts of the components) at locations along gas lines that are prone to occur as shown. When localized cooling and phase change occurs, the TCR heaters 940 controlled by multiplexed groups as described above attempt to maintain the temperature at a predetermined temperature despite the localized cooling and phase change. Provides heat for. Examples of locations may include pressure drop/expansion locations or localized heating fluctuations and other locations where a phase change may occur.

In some examples, the TCR heaters 940 are not insulated. That is, when the TCR heaters 940 are not operated, the position of the TCR heater 940 will be heated by the oven. In some examples, the TCR heaters 940 are controlled into groups based on the ratio of the resistances of one group to another group of TCR heaters. Resistance ratios can be maintained between groups of TCR heaters 940. Resistance ratios can be determined when all TCR heaters 940 are at the same reference temperature (eg, ambient temperature or another temperature). In some examples, the TCR heaters 940 are made using the same material for the resistive element of the TCR heater 940. Thus, the resistance ratios should be kept relatively constant at different temperatures because all TCR heaters 940 should have approximately the same slope (temperature as a function of resistance).

That is, the resistance ratios are determined at a predetermined temperature at which all TCR heaters 940 are at the same temperature. In some examples, the predetermined temperature for determining the resistance ratios is the ambient temperature. During operation, the resistances of each of the TCR heaters 940 of the group are measured, and predetermined ratios between the groups are maintained by a controller that varies the output power to each of the group of TCR heaters 940. In some examples, a plurality of TCR heater zones may be disposed along the gas flow path from the gas source to the outlet of the oven and/or to the processing chamber (e.g., similar to the heater zones shown in FIGS. Do). Additional details regarding controlling the resistance ratios of TCR heaters can be found in jointly assigned U.S. Provisional Application No. 62/694,171 filed July 5, 2018, which is incorporated herein by reference in its entirety. do.

Control can be performed using a control system similar to that shown in FIGS. 2C and 2D. In this example, TC 920 monitors the average temperature in oven 910. The controller 280 stores the resistance ratios of the groups of TCR heaters and controls the power output for each group of TCR heaters based thereon. In some examples, resistance ratios across groups of TCR heaters are maintained by controller 280 to maintain a uniform temperature in each group of heater zones and a target amount of temperature change across groups of TCR heaters. In other examples, the controller 280 further adjusts the resistance ratios of the TCRs depending on the location. For example, the controller 280 gradually adjusts the resistance ratios across the groups by adding incremental values to the resistance ratios of the groups of TCR heaters. This approach can be used to achieve a gradually rising temperature of the gas lines in the direction from the source towards the processing chamber.

Turning now to FIG. 10, a method 1000 for operating the heating system 900 of FIG. 9 is shown. At 1010, the temperature of the oven is monitored using a thermocouple. At 1020, a predetermined temperature is maintained in the oven based on the measured temperature and the target temperature. At 1030, the resistances of the TCR heaters of each group are measured. At 1040, predetermined resistance ratios are maintained between groups of TCR heaters by varying the power supplied to each of the groups of heater zones in a multiplexed manner as described above.

The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, applications thereof, or uses thereof in any way. The broad teachings of this disclosure can be implemented in various forms. Thus, while this disclosure includes specific examples, the true scope of this disclosure should not be so limited as other modifications will become apparent upon study of the drawings, specification, and the following claims. It should be understood that one or more steps of the method may be performed in a different order (or simultaneously) without changing the principles of the present disclosure. Further, although each of the embodiments has been described above as having specific features, any one or more of these features described for any embodiment of the present disclosure may be any other embodiment even if the combination is not explicitly described. May be implemented in and/or in combination with features. That is, the described embodiments are not mutually exclusive, and substitutions of one or more embodiments with other embodiments remain within the scope of the present disclosure.

Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are "connected", "engaged", "coupled" )", "adjacent", "next to", "on top of", "above", "below" and "disposed )”. Unless expressly stated as being “direct”, when a relationship between a first element and a second element is described in the above disclosure, this relationship means that other intermediary elements between the first element and the second element While it may be a direct relationship that does not exist, it may also be an indirect relationship in which one or more intervening elements (spatially or functionally) exist between the first element and the second element. As used herein, at least one of the phrases A, B, and C should be interpreted as meaning logically (A or B or C), using a non-exclusive logical OR, and "at least one A , At least one B, and at least one C" should not be construed as meaning.

In some implementations, the controller is part of a system that may be part of the examples described above. Such systems may include semiconductor processing equipment, including processing tool or tools, chamber or chambers, platform or platforms for processing, and/or specific processing components (wafer substrate support, gas flow system, etc.). . These systems may be integrated into electronics for controlling their operation prior to, during, and after processing of a semiconductor wafer or substrate. An electronic device may be referred to as a “controller” that may control the system or various components or sub-parts of the systems. The controller can, depending on the processing requirements and/or type of the system, the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings. , Radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, tools and other transfer tools, and/or It may be programmed to control any of the processes disclosed herein, including wafer transfers into and out of loadlocks connected or interfaced with a particular system.

Generally speaking, the controller receives instructions, issues instructions, controls operation, enables cleaning operations, enables endpoint measurements, etc. Various integrated circuits, logic, memory, and/or Alternatively, it may be defined as an electronic device having software. Integrated circuits are chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as Application Specific Integrated Circuits (ASICs), and/or executing program instructions (e.g., software). It may include one or more microprocessors, or microcontrollers. Program instructions may be instructions that are passed to the controller or to the system in the form of various individual settings (or program files) that specify operating parameters for executing a specific process on or on the semiconductor wafer. In some embodiments, the operating parameters are the process engineer to achieve one or more processing steps during fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of the wafer. It may also be part of a recipe prescribed by them.

The controller may be coupled to or be part of a computer, which, in some implementations, may be integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or part of a fab host computer system that may enable remote access of wafer processing. The computer monitors the current progress of manufacturing operations, examines the history of past manufacturing operations, examines trends or performance metrics from a plurality of manufacturing operations, changes parameters of current processing, and performs processing steps following the current processing. You can configure, or enable remote access to the system to start a new process. In some examples, a remote computer (eg, server) can provide process recipes to the system over a local network or a network that may include the Internet. The remote computer may include a user interface that enables programming or input of parameters and/or settings to be passed from the remote computer to the system in the future. In some examples, the controller receives instructions in the form of data specifying parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of tool the controller is configured to control or interface with and the type of process to be performed. Thus, as described above, the controller may be distributed by including one or more individual controllers networked and operating together for a common purpose, such as the processes and controls described herein, for example. An example of a distributed controller for these purposes would be one or more integrated circuits on a chamber in communication with one or more remotely located integrated circuits (eg, at the platform level or as part of a remote computer) that are combined to control a process on the chamber.

Without limitation, exemplary systems include plasma etch chamber or module, deposition chamber or module, spin-rinse chamber or module, metal plating chamber or module, cleaning chamber or module, bevel edge etch chamber or module, Physical Vapor Deposition (PVD). Chamber or module, CVD (Chemical Vapor Deposition) chamber or module, ALD chamber or module, ALE (Atomic Layer Etch) chamber or module, ion implantation chamber or module, track chamber or module, and manufacturing of semiconductor wafers and/ Or any other semiconductor processing systems that may be used or associated with manufacturing.

As described above, depending on the process step or steps to be carried out by the tool, the controller is capable of transferring containers of wafers from/to load ports and/or tool locations within a semiconductor fabrication plant. Other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, main computer, another controller, or one or more of the tools used, You can also communicate.

Claims (19)

A system for heating components of a substrate processing system, comprising:
A plurality of heaters disposed at a plurality of locations along a path of fluid flow from a fluid source to a destination in the substrate processing system; And
As a controller,
Grouping the plurality of heaters into groups of a plurality of heaters, each group of heaters comprising at least one of the plurality of heaters;
Determining an amount of temperature change to be maintained across the plurality of heater groups;
Selecting a group of heaters from the groups of the plurality of heaters; And
And the controller, configured to control power supplied to the selected group of heaters to maintain the amount of temperature change across the plurality of heater groups. The method of claim 1,
The controller is configured to group the plurality of heaters into groups of the plurality of heaters based on a geometry of the components of the path of the fluid flow from the source of the fluid to the destination of the substrate processing system, and The system for heating components of a substrate processing system, wherein the components include conduits and valves. The method of claim 1,
Each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller,
Measuring resistances of heaters in the selected group of heaters;
Determining temperatures of the heaters of the selected group of heaters based on the resistances of the heaters of the selected group of heaters; And
A system for heating components of a substrate processing system, configured to control power supplied to the selected group of heaters based on the determined temperatures of the heaters in the selected group of heaters and the amount of temperature change. The method of claim 1,
Each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller,
Determining a target temperature for the heaters in the selected group of heaters based on the amount of temperature change to be maintained across the groups of the plurality of heaters;
Determine target resistance values for the heaters in the selected group of heaters based on the target temperature for the heaters in the selected group of heaters;
Measuring resistances of the heaters in the selected group of heaters; And
Configured to control the power supplied to the selected group of heaters based on the measured resistances of the heaters in the selected group of heaters until the heaters in the selected group of heaters have the target resistance values. , A system for heating components of a substrate processing system. The method of claim 1,
Each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller,
Determining target temperatures for heaters in the selected group of heaters and for another group of heaters from the groups of the plurality of heaters based on the amount of temperature change to be maintained across the groups of the plurality of heaters;
Determining target resistance values for the heaters in the selected group of heaters and for heaters in the further group of heaters based on the target temperature for the heaters in the selected group of heaters;
Determine a ratio between resistance values targeted for the heaters in the selected group of heaters and resistance values targeted for the heaters in another group of heaters;
Measuring resistances of the heaters in the selected group of heaters; And
Of the heaters in the selected group of heaters to maintain the ratio between resistance values targeted for the heaters in the selected group of heaters and resistance values targeted for the heaters in another group of heaters. A system for heating components of a substrate processing system, configured to control the power supplied to the selected group of heaters based on measured resistances. The method of claim 1,
Further comprising a temperature sensor configured to sense the temperature of the fluid in the source,
The controller provides the system when the temperature is higher than the first threshold value or lower than the second threshold value, to ensure that the system operates when the temperature is between a first threshold value and a second threshold value. And the first threshold value is greater than the second threshold value. The method of claim 1,
Further comprising a current sensor for sensing the current supplied to each of the plurality of heaters,
The controller is configured to determine a resistance of each of the plurality of heaters based thereon. The method of claim 1,
Further comprising a voltage sensor for sensing the voltage supplied to each of the plurality of heaters,
The controller is configured to determine a resistance of each of the plurality of heaters based thereon. The method of claim 1,
A driver for driving the selected group of heaters based on a duty cycle; And
Further comprising a resistance estimator for estimating resistances of the group of heaters based on the duty cycle,
Wherein the controller is configured to determine temperatures of the selected group of heaters based on the resistances. The method of claim 1,
Wherein the controller is configured to provide a gradual heating profile across groups of the plurality of heaters from the source of fluid to the destination and the destination comprises a processing chamber for processing a semiconductor substrate in the substrate processing system. A system for heating components of a processing system. A system for heating components of a substrate processing system, comprising:
An oven surrounding one or more components of a substrate processing system and for maintaining a predetermined temperature within the oven;
A plurality of heaters disposed within the oven to heat the one or more components of the substrate processing system, the plurality of heaters including non-insulated resistive heaters; And
As a controller,
Grouping the plurality of heaters into groups of a plurality of heaters, each group of heaters comprising at least one of the plurality of heaters; And
The plurality of heaters by selecting a group of heaters from the groups of the plurality of heaters at a time to maintain the amount of temperature change across the groups of the plurality of heaters and to maintain the predetermined temperature in localized regions of the oven. A system for heating components of a substrate processing system, including the controller, configured to control the power supplied to groups of them. The method of claim 11,
Further comprising a temperature sensor located remotely from the plurality of heaters to sense the temperature in the oven,
The oven comprises a heating element, and
The controller is configured to determine an average temperature of the oven based on the sensed temperature to maintain the predetermined temperature and to control the heating element of the oven based thereon. For the system. The method of claim 11,
The system for heating components of a substrate processing system, wherein the predetermined temperature is an ambient temperature. The method of claim 11,
Each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller,
Measuring resistances of the heaters in the selected group of heaters;
Determining temperatures of the heaters of the selected group of heaters based on the resistances of the heaters of the selected group of heaters; And
The system for heating components of a substrate processing system, configured to control the power supplied to the selected group of heaters based on the determined temperatures of the heaters in the selected group of heaters and the amount of temperature change. The method of claim 11,
Each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller,
Determining a target temperature for the heaters in the selected group of heaters based on the amount of temperature change to be maintained across the groups of the plurality of heaters;
Determine target resistance values for the heaters in the selected group of heaters based on the target temperature for the heaters in the selected group of heaters;
Measuring resistances of the heaters in the selected group of heaters; And
Configured to control the power supplied to the selected group of heaters based on the measured resistances of the heaters in the selected group of heaters until the heaters in the selected group of heaters have the target resistance values. , A system for heating components of a substrate processing system. The method of claim 11,
Each of the plurality of heaters has a resistance that varies as a function of temperature, and the controller,
Determining target temperatures for heaters in the group of heaters selected from the groups of heaters and for another group of heaters based on the amount of temperature change to be maintained across the groups of the plurality of heaters;
Determine target resistance values for the heaters in the selected group of heaters and for the heaters of the further group of heaters based on the target temperature for the heaters in the selected group of heaters;
Determine a ratio between resistance values targeted for the heaters in the selected group of heaters and resistance values targeted for the heaters in another group of heaters;
Measuring resistances of the heaters in the selected group of heaters; And
Of the heaters in the selected group of heaters to maintain the ratio between resistance values targeted for the heaters in the selected group of heaters and resistance values targeted for the heaters in another group of heaters. A system for heating components of a substrate processing system, configured to control the power supplied to the selected group of heaters based on measured resistances. The method of claim 16,
The ratio is determined at the predetermined temperature. A system for heating components of a substrate processing system. The method of claim 16,
Wherein the controller is configured to adjust the ratio to provide gradual heating across groups of the plurality of heaters. The method of claim 11,
The controller is configured to group the plurality of heaters into groups of the plurality of heaters based on the geometry of the one or more components, and wherein the components flow the fluid from a source of fluid to a process chamber of the substrate processing system. A system for heating components of a substrate processing system, including valves and conduits of a path of.

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