KR20190073695A - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

The present invention provides an organic light emitting display device capable of preventing defects caused by moisture penetration and quality deterioration of an image; and a manufacturing method thereof. The organic light emitting display device comprises: a first substrate including a display region in which pixels are disposed, and a non-display region surrounding the display region; a first electrode disposed on the first substrate; an organic light emitting layer disposed on the first electrode; and a second electrode disposed on the organic light emitting layer, wherein the first substrate has a through-hole at one end, and the second electrode is provided to an inner side surface of the through-hole.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device,

The present invention relates to an organic light emitting display and a method of manufacturing the same.

As the information society develops, there is a growing demand for display devices for displaying images. Accordingly, in recent years, various display devices such as a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting display (OLED) It is also applied to smart devices in various ways.

Of the display devices, the organic light emitting display device is a self-emitting type, and has a better viewing angle and contrast ratio than a liquid crystal display device (LCD), does not require a separate backlight and is lightweight and thin, . In addition, the organic light emitting display device is capable of being driven by a DC low voltage, has a high response speed, and is particularly advantageous in manufacturing cost.

The OLED display has a structure in which a light emitting layer is provided between a cathode for injecting electrons and an anode for injecting holes, and electrons generated from the cathode and holes generated from the anode When the injected electrons and holes are injected into the light emitting layer, an exciton is generated by the excited electrons and holes, and the generated excitons are emitted from the excited state to the ground state, to be. Here, the cathode is a common electrode and is formed commonly on the light emitting layer.

When such an organic light emitting display device is applied to a smart device, a camera hole may be formed at one end of the organic light emitting display device. The organic light emitting display includes a display area in which an image is displayed and a non-display area in which no image is displayed. At this time, due to the characteristics of the negative electrode formed of the common layer, it is difficult to remove the negative electrode only in the camera hole portion, and the camera hole was formed in the non-display region.

However, as the smart device evolves, development of an organic light emitting display device in which a camera hole is formed in a display area while a non-display area is reduced and a display area in which an image is displayed is increased.

In the case where holes are formed by laser cutting the region where the cathode is formed in order to form the camera hole in the display region of the organic light emitting display device, the cross section of the cathode may be exposed to the outside, thereby causing moisture permeation failure.

Further, in order to form a camera hole in the display area of the organic light emitting display device, when a cathode is formed after covering the camera hole area with a mask, a negative electrode is formed twice in a portion obscured to fix the mask At this time, the thickness of the negative electrode becomes uneven and the image quality is deteriorated.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide an organic light emitting display device and a method of manufacturing the same that can prevent moisture permeation failure and image quality deterioration.

According to an aspect of the present invention, there is provided a display device including a first substrate including a display region in which pixels are disposed, and a non-display region surrounding the display region, a first electrode disposed on the first substrate, And a second electrode disposed on the organic light emitting layer, wherein the first substrate has a through hole at one end and the second electrode extends up to the inner side of the through hole, and an organic light emitting display device .

The organic light emitting diode display according to an embodiment of the present invention can form the second electrode entirely on the display area of the first substrate without covering the through hole with a mask so that the second electrode extends to the inner side surface of the through hole By forming the second electrode only once, the thickness of the second electrode can be prevented from being uneven to prevent the deterioration of the image quality and the process can be prevented from being increased.

In addition, the organic light emitting diode display according to an embodiment of the present invention includes the inorganic film extending to the inner surface of the through hole, thereby preventing the cross section of the second electrode provided on the inner surface of the through hole from being exposed to the outside, can do.

The effects obtained in the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description .

1 is an exploded perspective view of an OLED display according to an embodiment of the present invention.
2 is a perspective view illustrating a display panel of an OLED display according to an exemplary embodiment of the present invention.
3 is a plan view of the first substrate of FIG.
4 is a cross-sectional view schematically showing one side of a display panel according to an embodiment of the present invention, taken along line I-I 'of FIG.
FIG. 5 is a cross-sectional view of a through-hole of a display panel according to an embodiment of the present invention, taken along line II-II 'of FIG.
6 is a flowchart illustrating a method of manufacturing an OLED display according to an embodiment of the present invention.
7A to 7G are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention.

The meaning of the terms described herein should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms. It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof. It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one. The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of the organic light emitting diode display and the method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is an exploded perspective view of an OLED display according to an embodiment of the present invention.

Referring to FIG. 1, an OLED display includes a display panel 10, a polarizer 20, a frame 30, and a cover member 40.

The display panel 10 includes a first substrate and a second substrate. On one side of the first substrate facing the second substrate, gate lines, data lines, and pixels are disposed. The pixels are provided in an area defined by the intersection structure of the gate lines and the data lines. Details of the display panel 10 will be described later with reference to FIGS. 2 and 3. FIG.

The polarizing plate 20 is disposed on the display panel 10. One or more polarizing plates 20 may be disposed between the display panel 10 and the cover member 40, and may be omitted. The polarizing plate 20 prevents the visibility of the image displayed on the display panel 10 from deteriorating due to reflection of external light or the like.

The frame 30 accommodates the display panel 10, the polarizing plate 20, and the cover member 40. The frame 30 according to one example may be provided with a step on the inner wall to support the bottom surface of the cover member 40. [

The cover member 40 is coupled to the frame 30 together with the frame 30 to constitute an outer surface of the OLED display. The cover member (40) is provided with an adhesive member on the lower surface and can be combined with the lower structure. The cover member 40 according to one example can be combined with the polarizing plate 20.

The cover member 40 may be plastic or glass. The cover member 40 according to an exemplary embodiment has a transmissive area TA through which an image generated in the display panel 10 is transmitted and a transmissive area NTA through which an image is not transmitted at the outer area of the transmissive area TA . The transmissive area TA overlaps with the display area of the display panel 10, and the non-transmissive area NTA overlaps with the non-display area of the display panel 10. A hole CH is formed in the transmissive area TA, and may be a camera hole, for example. An opaque pattern layer may be formed in the non-transmissive region NTA.

FIG. 2 is a perspective view illustrating a display panel of an OLED display according to an embodiment of the present invention, and FIG. 3 is a plan view showing the first substrate of FIG. 2. Referring to FIG.

2 and 3, a display panel 10 according to an embodiment of the present invention includes a gate driver 11, a source driver integrated circuit (IC) 12, a flexible film (13), a circuit board (14), and a timing controller (15).

The display panel 10 includes a first substrate S1 and a second substrate S2. The second substrate S2 may be an encapsulating substrate. The first substrate S1 and the second substrate S2 may be plastic or glass.

remind Gate lines, data lines, and pixels are formed on one surface of the first substrate S1 facing the second substrate S2. The pixels are provided in an area defined by the intersection structure of the gate lines and the data lines.

Each of the pixels may include an organic light emitting element having a thin film transistor and an anode electrode, an organic light emitting layer, and a cathode electrode. Each of the pixels supplies a predetermined current to the organic light emitting element in accordance with the data voltage of the data line when the gate signal is inputted from the gate line by using the thin film transistor. Thus, the organic light emitting element of each of the pixels can emit light with a predetermined brightness according to a predetermined current. A detailed description of the structure of each of the pixels will be described later with reference to FIG.

The display panel 10 may be divided into a display area DA for displaying an image and a non-display area NDA for displaying no image, as shown in Fig.

In the display area DA, gate lines, data lines, and pixels may be formed. In order to increase the display area DA for displaying an image, the organic light emitting display according to an embodiment of the present invention includes a display area DA up to a non-display area NDA where a camera hole has been conventionally formed, . That is, in the organic light emitting display according to an embodiment of the present invention, a through hole CH that can be a camera hole is formed in the display area DA of the display panel 10. A detailed description of the through hole CH will be given later in FIG.

A gate driver 11 and pads may be formed in the non-display area NDA. remind The gate driver 11 supplies the gate signals to the gate lines according to the gate control signal input from the timing controller 15. The gate driver 11 may be formed in a non-display area DA on one side or both sides of the display area DA of the display panel 10 in a gate driver in panel (GIP) manner. Alternatively, the gate driver 11 may be formed as a driving chip, mounted on a flexible film, and disposed on a non-display area NDA on one side or both sides of the display area DA of the display panel 10 by a tape automated bonding (TAB) As shown in FIG.

remind The source drive IC 12 receives the digital video data and the source control signal from the timing control unit 15. [ The source driver IC 12 converts the digital video data into analog data voltages according to the source control signal and supplies the analog data voltages to the data lines. When the source drive IC 12 is made of a driving chip, it can be mounted on the flexible film 13 by a COF (chip on film) or a COP (chip on plastic) method.

Pads such as data pads may be formed in the non-display area NDA of the display panel 10. [ Wires connecting the pads to the source drive IC 12 and wirings connecting the pads to the wirings of the circuit board 14 may be formed in the flexible film 13. [ The flexible film 13 is attached on the pads using an anisotropic conducting film, whereby the pads and the wirings of the flexible film 13 can be connected.

remind The circuit board 14 may be attached to the flexible films 13. The circuit board 14 can be mounted with a plurality of circuits implemented with driving chips. For example, the timing control section 15 may be mounted on the circuit board 14. The circuit board 14 may be a printed circuit board or a flexible printed circuit board.

remind The timing controller 15 receives digital video data and timing signals from an external system board through a cable of the circuit board 14. The timing control section 15 generates a gate control signal for controlling the operation timing of the gate driving section 11 and a source control signal for controlling the source drive ICs 12 based on the timing signal. The timing control section 15 supplies a gate control signal to the gate driving section 11 and supplies a source control signal to the source drive ICs 12. [

4 is a cross-sectional view schematically showing one side of a display panel according to an embodiment of the present invention, taken along line I-I 'of FIG.

4, the display panel 10 includes a first substrate S1, a second substrate S2, a thin film transistor layer 100 disposed between the first and second substrates S1 and S2, A light emitting device layer 200, and an encapsulation layer 300.

The first substrate S1 may be a plastic film or a glass substrate.

The thin film transistor layer 100 is disposed on the first substrate S1. The thin film transistor layer 100 may include gate lines, data lines, and thin film transistors. Each of the thin film transistors includes a gate electrode, a semiconductor layer, and source and drain electrodes. When the gate driver is formed by a gate driver in panel (GIP) scheme, the gate driver may be formed together with the thin film transistor layer 100.

The organic light emitting device layer 200 is disposed on the thin film transistor layer 100. The organic light emitting device layer 200 includes an anode electrode, an organic light emitting layer, a cathode electrode, and a bank. Each of the organic light emitting layers may include a hole transporting layer, an organic light emitting layer, and an electron transporting layer. In this case, when a voltage is applied to the anode electrode and the cathode electrode, holes and electrons move to the light emitting layer through the hole transporting layer and the electron transporting layer, respectively. Since the pixels are disposed in the region where the organic light emitting device layer 200 is disposed, the region where the organic light emitting device layer 200 is disposed may be defined as a display region. The peripheral area of the display area can be defined as a non-display area.

The sealing layer 300 is disposed on the organic light emitting device layer 200. The sealing layer 300 prevents oxygen or moisture from penetrating into the organic light emitting device layer 200. The sealing layer 300 may include at least one organic film and an inorganic film.

Hereinafter, an organic light emitting display according to an embodiment of the present invention will be described in more detail with reference to FIG.

FIG. 5 is a cross-sectional view of a through-hole of a display panel according to an embodiment of the present invention, taken along line II-II 'of FIG.

5, the first substrate S1 has a through hole CH at one end of the display area DA and a thin film transistor layer (not shown) is formed in a region except for the through hole CH of the first substrate S1 100, an organic light emitting device layer 200, and an encapsulation layer 300 are formed.

The thin film transistor layer 100 includes thin film transistors 120, a gate insulating layer 130, an interlayer insulating layer 140, and a planarization layer 150.

A buffer film 110 may be disposed on one surface of the first substrate S1. The buffer layer 110 is disposed on one surface of the first substrate S1 to protect the thin film transistors 120 and the organic light emitting devices 210 from moisture penetrating through the first substrate S1 susceptible to moisture permeation do. One surface of the first substrate S1 may be a surface facing the second substrate S2. The buffer film 110 may be formed of a plurality of alternately stacked inorganic films. For example, the buffer film 110 may be formed of multiple films in which one or more inorganic films of a silicon oxide film (SiOx), a silicon nitride film (SiNx), and SiON are alternately stacked. The buffer film 110 may be omitted.

The thin film transistor 120 is disposed on the buffer film 110. The thin film transistor 120 includes an active layer 121, a gate electrode 122, a source electrode 123, and a drain electrode 124. [ 6 illustrates that the thin film transistor 120 is formed in a top gate manner in which the gate electrode 122 is located on the active layer 121, but the present invention is not limited thereto. That is, the thin film transistors 120 may be formed by a bottom gate method in which the gate electrode 122 is located under the active layer 121 or a bottom gate method in which the gate electrode 122 is formed on the upper and lower portions of the active layer 121 And may be formed in a double gate manner.

The active layer 121 is disposed on the buffer layer 110. The active layer 121 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. A light shielding layer for shielding external light incident on the active layer 121 may be disposed between the buffer layer 110 and the active layer 121. [

The gate insulating layer 130 may be disposed on the active layer 121. The gate insulating film 130 may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof.

The gate electrode 122 and the gate line may be disposed on the gate insulating layer 130. The gate electrode 122 and the gate line may be formed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) Or a single layer or multiple layers of one or more of these alloys.

The interlayer insulating layer 140 may be disposed on the gate electrode 122 and the gate line. The interlayer insulating film 140 may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof.

The source electrode 123, the drain electrode 124, and the data line 125 may be disposed on the interlayer insulating layer 140. Each of the source electrode 123 and the drain electrode 124 may be connected to the active layer 121 through a contact hole passing through the gate insulating film 130 and the interlayer insulating film 140. The source electrode 123, the drain electrode 124 and the data line 125 are formed of a metal such as Mo, Al, Cr, Au, Ti, Ni, (Nd), and copper (Cu), or an alloy thereof.

A protective film (not shown) for insulating the TFT 120 may be disposed on the source electrode 123, the drain electrode 124, and the data line 125. The protective film may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof. The protective film may be omitted.

The planarization layer 150 may be disposed on the interlayer insulating layer 140 to flatten a step due to the thin film transistor 120. The planarization layer 150 may be formed of an organic layer such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. have.

The organic light emitting device layer 200 is disposed on the thin film transistor layer 100. The organic light emitting device layer 200 includes an organic light emitting device 210 and a bank 220.

The organic light emitting diode 210 and the bank 220 are disposed on the thin film transistor 120 and the planarization layer 150. The organic light emitting device 210 includes a first electrode 211, an organic light emitting layer 212, and a second electrode 213.

remind The first electrode 211 may be disposed on the planarization layer 150. The first electrode 211 is connected to the source electrode 123 of the thin film transistor 120 through the contact hole passing through the planarization film 150. The first electrode 211 is formed of a laminated structure of aluminum and titanium (Ti / Al / Ti), a laminated structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, / ITO). ≪ / RTI > The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

The bank 220 may be disposed on the planarization layer 150 and the first electrode 211. The bank 220 may be arranged to cover the edge of the first electrode 211 on the planarization film 150 to partition the pixels. That is, the bank 220 serves as a pixel defining layer for defining pixels. The bank 220 may be formed of an organic film such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin .

The organic light emitting layer 212 is disposed on the first electrode 211 and the bank 220. The organic light emitting layer 212 may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer. In this case, when a voltage is applied to the first electrode 211 and the second electrode 213, holes and electrons move to the light emitting layer through the hole transporting layer and the electron transporting layer, respectively.

The organic light emitting layer 212 may be a white light emitting layer that emits white light. In this case, the organic light emitting layer 212 may be disposed to cover the first electrode 211 and the bank 220. A color filter (not shown) may be disposed on the second substrate S2.

Alternatively, the organic light emitting layer 212 may include a red light emitting layer for emitting red light, a green light emitting layer for emitting green light, or a blue light emitting layer for emitting blue light. In this case, the organic light emitting layer 212 may be disposed in a region corresponding to the first electrode 211, and the color filter may not be disposed on the second substrate S2.

The second electrode 213 is disposed on the organic light emitting layer 212. The second electrode 213 according to an embodiment of the present invention is provided extending from the top of the organic light emitting layer 212 to the inner side of the through hole CH.

Conventionally, in order to form the through-holes in the display area of the organic light emitting display, the second electrode is formed entirely on the first substrate after covering the through-hole forming area with a mask, The second electrode was again formed. That is, in the conventional organic light emitting display device, the second electrode is formed twice in the peripheral region where the through hole is formed. In the process, the second electrode is overlapped with the first electrode when the first electrode is deposited once and the second electrode is deposited twice . Therefore, the conventional organic light emitting display device has a problem that the thickness of the second electrode becomes uneven and the image quality deteriorates.

In order to solve such a problem, the organic light emitting diode display according to an embodiment of the present invention has a structure in which a groove surrounding the through hole forming region CHA is formed at one end of the first substrate S1, The second electrode 213 is formed entirely on the display area DA of the first substrate S1 without the step of masking the channel region CHA with the mask. The first substrate S1 is cut off in the groove area surrounding the through hole forming area CHA, so that the second electrode 213 is also cut off in the groove area. In this case, the second electrode 213 of the OLED display according to an embodiment of the present invention is extended to the inner side of the groove region by the step coverage characteristic, and the through hole forming region CHA When the first substrate S1 is removed, the second electrode 213 is provided up to the inner side of the through hole CH.

As described above, the organic light emitting diode display according to an embodiment of the present invention can be manufactured in the same manner as in the first embodiment except that the second electrode 213 is formed on the display area DA of the first substrate S1 The thickness of the second electrode 213 may be unevenly formed to prevent the deterioration of the image quality, and the increase of the process can also be prevented.

Meanwhile, when the organic light emitting display device is formed as a top emission structure, the second electrode 213 may be formed of a transparent conductive material such as ITO or IZO or a transparent conductive material such as magnesium (Mg), silver (Ag), or a semi-transmissive conductive material such as an alloy of magnesium (Mg) and silver (Ag). A capping layer may be disposed on the second electrode 213.

The sealing layer 300 is disposed on the organic light emitting device layer 200. The sealing layer 300 according to an exemplary embodiment of the present invention includes a sealing film 310 and a dam (DAM).

The sealing film 310 is disposed on the second electrode 213 and is disposed so as to cover the organic light emitting device layer 200 so that oxygen or moisture is permeated into the organic light emitting layer 212 and the second electrode 213 . For this purpose, the sealing film 310 may comprise at least one inorganic film and at least one organic film. For example, the sealing film 310 may include a first inorganic film 311, an organic film 312, and a second inorganic film 313.

The first inorganic layer 311 may be disposed on the second electrode 213. The first inorganic film 311 may be disposed to cover the second electrode 213. Specifically, the first inorganic film 311 covers the second electrode 213 and the bank 220, extends to the inner surface of the through hole CH, and covers the top and sides of the second electrode 213. The first inorganic film 311 is provided so as to cover the upper portion and the side portion of the second electrode 213 extending to the inner side of the through hole CH because the step coverage characteristic is good. Therefore, in the organic light emitting display according to the embodiment of the present invention, the first inorganic film 311 is extended to the inner side surface of the through hole CH, It is possible to prevent the cross section of the opening 213 from being exposed to the outside and causing moisture permeation failure.

The organic film 312 is disposed on the first inorganic film 311 in order to compensate for defects and level differences that may occur in the first inorganic film 311. [ The organic layer 312 prevents the particles from penetrating the first inorganic layer 311 and into the organic light emitting layer 212 and the second electrode 213 and is formed to have a sufficient thickness . The organic film 312 may be formed on a substrate in a liquid form through an inkjet process, and then may be formed through a curing process.

The second inorganic film 313 may be disposed on the organic film 312. The second inorganic film 313 may be disposed so as to cover the organic film 312. Specifically, the second inorganic film 313 covers the organic film 312 and extends to the inner side of the through hole CH to cover the top and sides of the first inorganic film 311 and the second electrode 213 Cover. The second inorganic film 313 is provided so as to cover the upper portion and the side portion of the second electrode 213 extending to the inner side of the through hole CH because the step coverage characteristic is good. Accordingly, in the organic light emitting diode display according to the embodiment of the present invention, the second inorganic film 313 is extended to the inner side of the through hole CH so that the second electrode 313 provided on the inner side of the through hole CH, It is possible to prevent the cross section of the opening 213 from being exposed to the outside and causing moisture permeation failure.

The second inorganic film 313 is free from defects or step differences due to the organic film 312 disposed at the lower portion thereof, It is possible to prevent the reliability and the quality from deteriorating.

Each of the first and second inorganic films 311 and 313 may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide. The organic layer 312 may be formed of an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

remind The dam DAM is disposed in the display area DA of the first substrate S1 to block the flow of the organic film 312 constituting the sealing film 310. [ More specifically, the dam DAM is disposed so as to surround the perimeter of the through-hole CH to block the flow of the organic film 312 constituting the sealing film 310. The dam DAM may be disposed on a side surface of the organic film 312 to block the flow of the organic film 312 so that the organic film 312 constituting the sealing film 310 can not penetrate the through hole CH. have. Thus, the dam DAM can prevent the organic film 312 from penetrating into the through-hole CH.

The dam (DAM) according to an exemplary embodiment of the present invention may include an internal dam (ID) and an external dam (OD).

The internal dam (ID) is disposed adjacent to the organic film 312 and can primarily block the flow of the organic film 312 constituting the sealing film 310.

The external dam (OD) is disposed so as to surround the outer perimeter of the inner dam (ID), and is spaced apart from the inner dam (ID) and arranged side by side. At this time, the interval between the external dam (OD) and the internal dam (ID) is about 30 to 40 um, but the present invention is not limited thereto. The external dam (OD) can secondarily block the organic film (312) flowing over to the outside of the internal dam (ID). A dam (DAM) according to an exemplary embodiment of the present invention may be formed at the same time when forming the planarization film 150, the bank 220, and the spacers, and thus, may be formed without any additional process.

FIG. 6 is a flowchart illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment of the present invention. FIGS. 7A to 7G are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment of the present invention.

The sectional views shown in FIGS. 6 to 7G relate to a method of manufacturing an organic light emitting display according to an embodiment of the present invention shown in FIG. 5, and the same reference numerals are given to the same components. Hereinafter, a method of manufacturing a display device according to an embodiment of the present invention will be described with reference to FIG. 6 and FIGS. 7A to 7G.

First, as shown in FIG. 7A, a thin film transistor 120 is formed on a first substrate S1. (S601)

More specifically, first, a buffer film 110 is formed on the first substrate 111, and an active layer 121 of the thin film transistor 120 is formed. More specifically, an active metal layer is formed on the entire surface of the first substrate 111 by using sputtering or MOCVD (Metal Organic Chemical Vapor Deposition). Then, the active metal layer is patterned by a mask process using a photoresist pattern to form an active layer 121. The active layer 121 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material.

Then, a gate insulating film 130 is formed on the active layer 121. Then, The gate insulating film 130 may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof.

Then, the gate electrode 122 of the thin film transistor 120 and the gate line are formed on the gate insulating film 130. Then, Specifically, a first metal layer is formed on the entire surface of the gate insulating film 130 by sputtering, MOCVD, or the like. Then, the first metal layer is patterned by a mask process using a photoresist pattern to form a gate electrode 122 and a gate line. The gate electrode 122 and the gate line may be formed of any one of Mo, Al, Cr, Au, Ti, Ni, Ne, Or a single layer or multiple layers of one or more of these alloys.

Then, an interlayer insulating film 140 is formed on the gate electrode 122. The interlayer insulating film 140 may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof.

Contact holes are then formed through the gate insulating layer 130 and the interlayer insulating layer 140 to expose the active layer 121 and the interlayer insulating layer 140 to expose the gate line.

Then, source and drain electrodes 123 and 124 of the thin film transistor 120 are formed on the interlayer insulating film 140. Specifically, a second metal layer is formed on the entire surface of the interlayer insulating film 140 by sputtering, MOCVD, or the like. Next, the source and drain electrodes 123 and 124 are formed by patterning the second metal layer by a mask process using a photoresist pattern. Each of the source and drain electrodes 123 and 124 may be connected to the active layer 121 through a contact hole passing through the gate insulating film 130 and the interlayer insulating film 140. The source and drain electrodes 123 and 124 may be formed of a material selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, Or an alloy of any of these materials.

Secondly, as shown in FIG. 7B, a groove SH surrounding the periphery of the through-hole forming region CHA is formed at one end of the first substrate S1. (S602)

Third, as shown in FIG. 7C, a first electrode 211 electrically connected to the thin film transistor 120 is formed. (S603)

First, a planarizing film 150 is formed on the source and drain electrodes 123 and 124 of the thin film transistor 120 to planarize a step due to the thin film transistor 120. The planarization layer 150 may be formed of an organic layer such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. have.

Then, the first electrode 211 of the organic light emitting diode 210 is formed on the planarization layer 150 on the planarization layer 150. Specifically, a third metal layer is formed on the entire surface of the planarization film 150 by sputtering, MOCVD, or the like. Then, the third metal layer is patterned by a mask process using a photoresist pattern to form the first electrode 211. The first electrode 211 may be connected to the source electrode 213 of the thin film transistor 120 through a contact hole passing through the planarization layer 150. The first electrode 211 is formed of a laminated structure of aluminum and titanium (Ti / Al / Ti), a laminated structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, / ITO). ≪ / RTI >

Fourth, an organic light emitting layer 212 is formed on the first electrode 211 as shown in FIG. 7D. (S604)

First, banks 220 are formed on the flattening film 150 so as to cover the edges of the first electrodes 211 to form pixels, and a dam (DAM) is formed thereon. At this time, the dam DAM is formed so as to surround the through-hole forming region CHA. Each of the dam (DAM) and the bank 220 is formed of an organic material such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, Film.

However, the dam (DAM) may be formed at the same time as the planarization layer 150.

Then, the organic light emitting layer 212 is formed on the first electrode 211 and the bank 220 by a deposition process or a solution process.

Fourth, a second electrode 213 is formed on the through hole forming region CHA and the organic light emitting layer 212, as shown in FIG. 7E. (S605)

The second electrode 213 may be a common layer formed commonly to the pixels. The second electrode 213 according to an embodiment of the present invention is provided extending from the top of the organic light emitting layer 212 to the inner side of the groove SH, that is, the inner side of the through hole CH.

Conventionally, in order to form the through-holes in the display area of the organic light emitting display, the second electrode is formed entirely on the first substrate after covering the through-hole forming area with a mask, The second electrode was again formed. That is, in the conventional organic light emitting display device, the second electrode is formed twice in the peripheral region where the through hole is formed. In the process, the second electrode is overlapped with the first electrode when the first electrode is deposited once and the second electrode is deposited twice . Therefore, the conventional organic light emitting display device has a problem that the thickness of the second electrode becomes uneven and the image quality deteriorates.

In order to solve such a problem, an organic light emitting display according to an embodiment of the present invention includes a first substrate S1 formed with a groove SH surrounding a through hole forming region CHA at one end thereof, The second electrode 213 is formed entirely on the display area DA of the first substrate S1 without the step of masking the hole formation area CHA with the mask. The first substrate S1 is cut in the groove SH surrounding the through hole forming region CHA, so that the second electrode 213 is also cut off in the groove region. In this case, the second electrode 213 of the OLED display according to an embodiment of the present invention is extended to the inner side of the groove region by the step coverage characteristic, and the through hole forming region CHA When the first substrate S1 is removed, the second electrode 213 is provided up to the inner side of the through hole CH.

As described above, the organic light emitting diode display according to an embodiment of the present invention can be manufactured in the same manner as in the first embodiment except that the second electrode 213 is formed on the display area DA of the first substrate S1 The thickness of the second electrode 213 may be unevenly formed to prevent the deterioration of the image quality, and the increase of the process can also be prevented.

The second electrode 213 may be formed of a transparent conductive material (TCO) such as ITO or IZO that can transmit light. The second electrode 213 may be formed by a physical vapor deposition method such as a sputtering method. A capping layer may be formed on the second electrode 213.

Fifthly, as shown in FIG. 7F, a sealing film 310 covering the second electrode 213 is formed. (S606)

An encapsulation layer 300 is formed on the organic light emitting device layer 200. Specifically, the first inorganic film 311, the organic film 312, and the second inorganic film 313 are sequentially formed so as to cover the organic light emitting element layer 200.

First, the first inorganic film 311 is formed so as to cover the planarization film 150, the bank 220, and the second electrode 213. Specifically, the first inorganic film 311 covers the second electrode 213 and the bank 220, extends to the inner side surface of the through-hole SH, and covers the top and sides of the second electrode 213. The first inorganic film 311 is provided so as to cover the upper portion and the side portion of the second electrode 213 extending to the inner side of the through hole CH because the step coverage characteristic is good. Therefore, in the organic light emitting display according to the embodiment of the present invention, the first inorganic film 311 is extended to the inner side surface of the through hole CH, It is possible to prevent the cross section of the opening 213 from being exposed to the outside and causing moisture permeation failure.

Then, an organic film 312 is formed on the first inorganic film 311. The organic film 312 is formed so as to cover the first inorganic film 311. The organic layer 312 is preferably formed to a thickness sufficient to prevent particles from penetrating the first inorganic layer 311 and being injected into the organic light emitting layer 212 and the second electrode 213.

Then, the second inorganic film 313 is formed so as to cover the organic film 312. Specifically, the second inorganic film 313 covers the organic film 312 and extends to the inner side of the through hole CH to cover the top and sides of the first inorganic film 311 and the second electrode 213 Cover. The second inorganic film 313 is provided so as to cover the upper portion and the side portion of the second electrode 213 extending to the inner side of the through hole CH because the step coverage characteristic is good. Accordingly, in the organic light emitting diode display according to the embodiment of the present invention, the second inorganic film 313 is extended to the inner side of the through hole CH so that the second electrode 313 provided on the inner side of the through hole CH, It is possible to prevent the cross section of the opening 213 from being exposed to the outside and causing moisture permeation failure.

Each of the first and second inorganic films 311 and 313 is formed of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, or titanium oxide . The organic layer 312 may be formed of an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

Sixth, as shown in FIG. 7G, the first substrate S1 is removed in the through-hole forming region CHA to form a through-hole CH. (S607)

The second electrode 213, the first inorganic film 311, and the second inorganic film 313 may be formed on the first substrate S1 of the through hole forming region CHA. The first substrate S1 formed inside the groove SH is removed to form the through hole CH in the through hole forming region CHA.

The organic light emitting diode display according to the embodiment of the present invention can form the second electrode 213 entirely on the display area DA of the first substrate S1 without the process of covering the through hole CH with the mask, The second electrode 213 extends to the inner side of the through hole CH and the second electrode 213 is formed only once so that the thickness of the second electrode 213 becomes uneven, It is possible to prevent deterioration and also to prevent an increase in process.

The organic light emitting diode display according to an embodiment of the present invention includes the first and the twelfth inorganic layers 311 and 313 extended to the inner surface of the through hole CH, It is possible to prevent the cross section of the second electrode 213 provided in the second electrode 213 from being exposed to the outside, thereby preventing the moisture permeation failure.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

10: display panel 11: gate driver
12: Source drive IC 13: Flexible film
14: circuit board 15: timing control unit
S1: first substrate S2: second substrate
20: polarizer 30: frame
40: cover member 100: thin film transistor layer
110: buffer film 120: thin film transistor
121: active layer 122: gate electrode
123: source electrode 124: drain electrode
130: gate insulating film 140: interlayer insulating film
150: planarization film 200: organic light emitting element layer
210: organic light emitting device 211: first electrode
212: organic light emitting layer 213: second electrode
220: bank 300: sealing layer
310: sealing film 311: first inorganic film
312: organic film 313: second inorganic film
DAM: Dam ID: Internal dam
OD: External dam

Claims (10)

A first substrate including a display region in which pixels are arranged, and a non-display region surrounding the display region;
A first electrode disposed on the first substrate;
An organic light emitting layer disposed on the first electrode; And
And a second electrode disposed on the organic light emitting layer,
Wherein the first substrate has a through hole at one end thereof and the second electrode is provided up to an inner side surface of the through hole. The method according to claim 1,
And the through hole is provided in a display region of the first substrate. The method according to claim 1,
And a sealing film covering the first electrode, the organic light emitting layer, and the second electrode. The method of claim 3,
Wherein the sealing film comprises a first inorganic film, an organic film disposed on the first inorganic film, and a second inorganic film covering the organic film,
Wherein the first inorganic film and the second inorganic film cover the upper portion and the side portion of the second electrode. The method of claim 3,
Wherein the sealing film comprises a first inorganic film, an organic film disposed on the first inorganic film, and a second inorganic film covering the organic film,
Wherein the first inorganic film and the second inorganic film are provided up to the inner side surface of the through hole. The method of claim 3,
Wherein the sealing film comprises a first inorganic film, an organic film disposed on the first inorganic film, and a second inorganic film covering the organic film,
And a dam disposed on a side of the organic film and surrounding the through hole. The method according to claim 6,
Wherein the dam is provided in a display region of the first substrate. Forming a thin film transistor on the first substrate;
Forming a groove surrounding one end of the through hole forming region at one end of the first substrate;
Forming a first electrode electrically connected to the thin film transistor;
Forming an organic light emitting layer on the first electrode;
Forming a second electrode on the through hole forming region and the organic light emitting layer;
Forming a sealing film covering the second electrode; And
And removing the first substrate inside the groove to form a through hole. 9. The method of claim 8,
And the second electrode is formed to the inner surface of the through hole. 9. The method of claim 8,
Wherein the sealing film comprises a first inorganic film, an organic film disposed on the first inorganic film, and a second inorganic film covering the organic film,
Before the step of forming the through-hole,
Wherein the second electrode, the first inorganic film, and the second inorganic film are formed on the first substrate of the through-hole forming region

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