KR20190018425A - 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃 - Google Patents
스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃 Download PDFInfo
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- KR20190018425A KR20190018425A KR1020187035598A KR20187035598A KR20190018425A KR 20190018425 A KR20190018425 A KR 20190018425A KR 1020187035598 A KR1020187035598 A KR 1020187035598A KR 20187035598 A KR20187035598 A KR 20187035598A KR 20190018425 A KR20190018425 A KR 20190018425A
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- 238000005477 sputtering target Methods 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000013077 target material Substances 0.000 claims abstract description 195
- 239000000463 material Substances 0.000 claims abstract description 122
- 230000002093 peripheral effect Effects 0.000 claims abstract description 72
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 27
- 238000007747 plating Methods 0.000 description 49
- 239000010410 layer Substances 0.000 description 43
- 239000010949 copper Substances 0.000 description 21
- 229910052802 copper Inorganic materials 0.000 description 18
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 238000003825 pressing Methods 0.000 description 13
- 238000011282 treatment Methods 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 238000005304 joining Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 238000005728 strengthening Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001513 hot isostatic pressing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- -1 and the like Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000007730 finishing process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 102200081478 rs121908458 Human genes 0.000 description 1
- 102200082816 rs34868397 Human genes 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
도 2는 제 1 실시 형태의 스퍼터링 타깃의 단면도이다.
도 3은 제 1 실시 형태의 스퍼터링 타깃의 확대 단면도이다.
도 4는 제 1 실시 형태의 스퍼터링 타깃의 제조 방법에 대하여 설명하는 설명도이다.
도 5는 제 1 실시 형태의 스퍼터링 타깃의 제조 방법에 대하여 설명하는 설명도이다.
도 6은 제 1 실시 형태의 스퍼터링 타깃의 제조 방법에 대하여 설명하는 설명도이며, 실시예 1∼3의 스퍼터링 타깃을 나타내는 단면도이다.
도 7은 제 1 실시 형태의 스퍼터링 타깃의 제조 방법에 대하여 설명하는 설명도이다.
도 8은 본 발명의 스퍼터링 타깃의 제 2 실시 형태를 나타내는 단면도이다.
도 9는 본 발명의 스퍼터링 타깃의 제 3 실시 형태를 나타내는 단면도이다.
도 10은 제 1 실시 형태의 스퍼터링 타깃의 제조 방법에 대하여 설명하는 설명도이다.
도 11은 실시예 4의 스퍼터링 타깃을 나타내는 단면도이다.
도 12는 본 발명의 스퍼터링 타깃의 기타 형태를 나타내는 단면도이다.
도 13은 본 발명의 스퍼터링 타깃의 다른 형태를 나타내는 단면도이다.
도 14는 상 열판의 하면(프레스면)의 위치 좌표와 그 위치 좌표의 치수를 나타내는 설명도이다.
10: 배킹 플레이트재
11: 저판
11a: 상면
12: 프레임부
12a: 상면
20, 20A∼20D: 타깃재
20a: 저면
21: 상면
21a: 돌출부
21b: 돌출부
31, 31A: 상 열판
310: 하면(프레스면)
310a: 돌출부
32: 하열판
40: 도금층
41: 돌출 부재
41a∼41d: 제 1∼제 4 돌출 부재
Claims (1)
- 배킹 플레이트재의 상면에 타깃재를 확산 접합하여 스퍼터링 타깃을 제조하는 방법으로서,
상기 타깃재의 경도가 상기 배킹 플레이트재의 경도보다 작고,
열판에 의해 상기 타깃재의 상면의 중심부를 그 상면의 외주부보다 먼저 상방으로부터 가압하면서 가열하여, 상기 배킹 플레이트재에 상기 타깃재를 확산 접합하는, 스퍼터링 타깃의 제조 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2016138711 | 2016-07-13 | ||
JPJP-P-2016-138711 | 2016-07-13 | ||
PCT/JP2017/025145 WO2018012461A1 (ja) | 2016-07-13 | 2017-07-10 | スパッタリングターゲットの製造方法およびスパッタリングターゲット |
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KR1020187012193A Division KR20180075535A (ko) | 2016-07-13 | 2017-07-10 | 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃 |
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KR1020217007389A Division KR20210031771A (ko) | 2016-07-13 | 2017-07-10 | 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃 |
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KR1020187012193A KR20180075535A (ko) | 2016-07-13 | 2017-07-10 | 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃 |
KR1020187035598A KR20190018425A (ko) | 2016-07-13 | 2017-07-10 | 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃 |
KR1020217007389A KR20210031771A (ko) | 2016-07-13 | 2017-07-10 | 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃 |
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Country Status (6)
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US (2) | US10369656B2 (ko) |
JP (2) | JP6277309B2 (ko) |
KR (3) | KR20180075535A (ko) |
CN (1) | CN108350566B (ko) |
TW (1) | TWI637074B (ko) |
WO (1) | WO2018012461A1 (ko) |
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JP6271798B2 (ja) | 2016-07-13 | 2018-01-31 | 住友化学株式会社 | スパッタリングターゲットの製造方法 |
US11754691B2 (en) * | 2019-09-27 | 2023-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Target measurement device and method for measuring a target |
US11621212B2 (en) * | 2019-12-19 | 2023-04-04 | International Business Machines Corporation | Backing plate with manufactured features on top surface |
CN114351096A (zh) * | 2022-01-26 | 2022-04-15 | 浙江最成半导体科技有限公司 | 溅射靶材、靶材组件及靶材组件的制作方法 |
CN119072380A (zh) * | 2022-06-22 | 2024-12-03 | 株式会社Mole′S Act | 金属接合体的制造方法及压铸构件的接合方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09143707A (ja) | 1995-11-29 | 1997-06-03 | Hitachi Metals Ltd | スパッタリング用ターゲットの製造方法およびスパッタリング用ターゲット |
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US5693203A (en) * | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
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- 2017-07-10 WO PCT/JP2017/025145 patent/WO2018012461A1/ja active Application Filing
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KR20210031771A (ko) | 2021-03-22 |
CN108350566A (zh) | 2018-07-31 |
US10737352B2 (en) | 2020-08-11 |
JP2018087381A (ja) | 2018-06-07 |
TWI637074B (zh) | 2018-10-01 |
JP2018016884A (ja) | 2018-02-01 |
CN108350566B (zh) | 2019-08-23 |
KR20180075535A (ko) | 2018-07-04 |
US10369656B2 (en) | 2019-08-06 |
TW201816157A (zh) | 2018-05-01 |
JP6277309B2 (ja) | 2018-02-07 |
WO2018012461A1 (ja) | 2018-01-18 |
US20180304400A1 (en) | 2018-10-25 |
US20190299324A1 (en) | 2019-10-03 |
JP6346386B2 (ja) | 2018-06-20 |
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