KR20170139957A - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

The present invention provides an organic light emitting display device capable of connecting an auxiliary electrode and a cathode electrode while completely depositing an organic light emitting layer, and a method of manufacturing the same, wherein the auxiliary electrode is disposed on the first substrate, A thin film transistor, and a first electrode electrically connected to the thin film transistor. In addition, the present invention includes a multi-layer electrode electrically connected to the auxiliary electrode, an organic light emitting layer disposed on the first electrode, and a second electrode connected to the multi-layer electrode, wherein the organic light emitting layer is separated by the multi-layer electrode.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to an organic light emitting diode display, and more particularly, to a top emission organic light emitting diode display and a method of manufacturing the same.

The organic light emitting diode (OLED) is a self-luminous element having low power consumption, high response speed, high luminous efficiency, high brightness and wide viewing angle.

The organic light emitting diode (OLED) is divided into a top emission type and a bottom emission type according to a transmission direction of light emitted through the organic light emitting diode. Since the lower light emitting method has a problem of lowering the aperture ratio, the upper light emitting method is mainly used.

In the conventional top emission type OLED display, a thin film transistor is provided on a substrate, and a passivation layer, a planarization layer, an anode electrode, an auxiliary electrode, a bank, an organic emission layer, and a cathode electrode are provided on the thin film transistor.

At this time, the conventional organic light emitting display has a disadvantage that it is difficult to deposit the organic light emitting layer on the entire surface. In the conventional organic light emitting diode display, when the organic light emitting layer is completely deposited, a space for connecting the cathode electrode and the auxiliary electrode is blocked by the organic light emitting layer, so that the auxiliary electrode and the cathode electrode can not be connected.

It is an object of the present invention to provide an organic light emitting diode (OLED) display device capable of connecting an auxiliary electrode and a cathode electrode while completely depositing an organic light emitting layer, and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a plasma display panel including an auxiliary electrode disposed on a first substrate, a thin film transistor spaced apart from the auxiliary electrode, and a first electrode electrically connected to the thin film transistor. In addition, the present invention provides an organic electroluminescent device comprising a multi-layer electrode electrically connected to an auxiliary electrode, an organic light emitting layer disposed on the first electrode, and a second electrode connected to the multi-layer electrode, A light emitting display and a method of manufacturing the same are provided.

The OLED display according to an exemplary embodiment of the present invention has an effect of preventing poor driving between pixels by separating the organic light emitting layer by having the multi-layer electrode in an undercut shape.

In addition, the organic light emitting diode display according to an exemplary embodiment of the present invention has an effect of exposing the multi-layer electrode while the organic light emitting layer is entirely deposited on the active region without an additional process due to the undercut shape of the multi-layer electrode.

In the organic light emitting display according to an embodiment of the present invention, one side of the exposed multi-layer electrode is connected to the second electrode so that the other side of the multi-layer electrode is electrically connected to the auxiliary electrode, The resistance of the resistor is reduced.

The effects obtained in the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description .

1 is a cross-sectional view of an OLED display according to an exemplary embodiment of the present invention.
2 to 9 are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment of the present invention.

The meaning of the terms described herein should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms. It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof. It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one. The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of the organic light emitting diode display and the method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of an OLED display according to an exemplary embodiment of the present invention.

Referring to FIG. 1, an organic light emitting display according to an embodiment of the present invention includes an active area AA and a pad area (PA area).

A buffer layer 120, a thin film transistor T, a connection electrode 175, a passivation layer 180, a planarization layer 190, and a passivation layer 180. The first substrate 100, the auxiliary electrode 110, the buffer layer 120, A first electrode 200, a multilayer electrode 210, a bank 220, an organic light emitting layer 230, a second electrode 240, and a second substrate 300.

Although glass is mainly used for the first substrate 100, transparent plastic such as polyimide which can be bent or rolled can be used. When polyimide is used as the material of the first substrate 100, polyimide excellent in heat resistance that can withstand high temperatures can be used, considering that a high temperature deposition process is performed on the first substrate 100 .

The auxiliary electrode 110 is disposed in the active area AA on the first substrate 100. The auxiliary electrode 110 is connected to the second electrode 240 through a connection electrode 175 and a multi-layer electrode 210, which will be described later. The auxiliary electrode 110 is connected to the second electrode 240 to reduce the resistance of the second electrode 240. At this time, the auxiliary electrode 110 may be formed of, for example, Mo, Al, Cr, Au, Ti, Ni, Ne, ), Or an alloy thereof.

The buffer layer 120 may be disposed on the entire upper surface of the first substrate 100. The buffer layer 120 functions to prevent water from penetrating into the first substrate 100, which is susceptible to moisture permeation. The buffer layer 120 functions to prevent impurities such as metal ions from being diffused from the first substrate 100 and permeating the active layer 130 of the thin film transistor T. [ At this time, the buffer layer 120 may be formed of an inorganic insulating material, for example, silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

The thin film transistor T is disposed on the buffer layer 120. The thin film transistor T includes an active layer 130, a gate insulating layer 140, a gate electrode 150, an interlayer insulating layer 160, a source electrode 171, and a drain electrode 173.

The active layer 130 is disposed on the first substrate 100 disposed in the active area AA. The active layer 130 is disposed so as to overlap with the gate electrode 150. The active layer 130 may include a first region located on the source electrode 171 side, a second region located on the drain electrode 173 side, and a center region located between the first region and the second region. The central region may be made of a semiconductor material not doped with a dopant, and the one end region and the other end region may be made of a semiconductor material doped with a dopant.

The gate insulating layer 140 is disposed on the active layer 130. The gate insulating layer 140 serves to insulate the active layer 130 from the gate electrode 150. At this time, the gate insulating layer 140 may be formed of an inorganic insulating material, for example, silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

The gate electrode 150 is disposed on the gate insulating layer 140. The gate electrode 150 overlaps the central region of the active layer 130 with the gate insulating layer 140 therebetween. The gate electrode 150 may be formed of a metal such as molybdenum, aluminum, chromium, gold, titanium, nickel, , Or an alloy thereof. However, the present invention is not limited thereto.

The interlayer insulating layer 160 is disposed on the gate electrode 150. The interlayer insulating layer 160 is disposed on the entire surface of the active area AA including the gate electrode 150. At this time, the interlayer insulating layer 160 may be formed of the same inorganic insulating material as the gate insulating layer 140, for example, silicon dioxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON) But is not limited thereto.

remind The source electrode 171 and the drain electrode 173 are disposed apart from each other on the interlayer insulating layer 160. The interlayer insulating layer 160 is provided with a first contact hole exposing a part of one end region of the active layer 130 and a second contact hole exposing a part of the other end region of the active layer 130. The source electrode 171 is connected to the one end region of the active layer 130 through the first contact hole and the drain electrode 173 is connected to the other end region of the active layer 130 through the second contact hole. At this time, the source and drain electrodes 171 and 173 may be formed of, for example, Mo, Al, Cr, Au, Ti, Ni, And copper (Cu), or an alloy thereof. Particularly, the source and drain electrodes 171 and 173 according to an example of the present invention may be composed of, for example, MoTi / Cu / MoTi sequentially stacked. However, it is not limited thereto.

The structure of the thin film transistor T is not limited to the example described above, and can be variously modified to a known structure that can be easily practiced by those skilled in the art.

The connecting electrode 175 is disposed on the interlayer insulating layer 160. The connection electrode 175 may be disposed on the same layer as the source and drain electrodes 171 and 173 and may be formed of the same material as the source and drain electrodes 171 and 173. One side of the connection electrode 175 is connected to the auxiliary electrode 110 and the other side is connected to the multi-layer electrode 210 to connect the auxiliary electrode 110 and the second electrode 240. The connection electrode 175 is partially exposed by the groove formed in the passivation layer 180 and is connected to the multi-layer electrode 210 through the exposed connection electrode 175. At this time, the connection electrode 175 may be formed of, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium ), Or an alloy thereof. In particular, the connecting electrode 175 according to an exemplary embodiment of the present invention may be formed of, for example, MoTi / Cu / MoTi stacked in sequence, but is not limited thereto.

The passivation layer 180 may include And is disposed on the thin film transistor T and the connection electrode 175. The passivation layer 180 is disposed in the active area AA on the first substrate 100 and may also be disposed in some pad areas PA. This passivation layer 180 serves to protect the thin film transistor T. [ At this time, the passivation layer 180 may be formed of an inorganic insulating material such as silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

The planarization layer 190 is disposed on the thin film transistor T and the passivation layer 180 and is disposed between the passivation layer 180 and the first electrode 200. The planarization layer 190 serves to flatten the top of the thin film transistor T and the passivation layer 180. The planarization layer 190 may include an organic insulating material such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, ), But the present invention is not limited thereto. A third contact hole exposing the drain electrode 173 of the thin film transistor T is formed in the passivation layer 180 and the planarization layer 190. And the drain electrode 173 and the first electrode 200 are electrically connected through the third contact hole.

The first electrode 200 is disposed on the planarization layer 190. The first electrode 200 is connected to the drain electrode 173 of the thin film transistor T through the third contact hole provided in the passivation layer 180 and the planarization layer 190. The first electrode 200 may serve as an anode electrode. At this time, the first electrode 200 may be made of a transparent conductive material having a relatively large work function value, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). The first electrode 200 may be composed of at least two layers including a metal material having excellent reflection efficiency, for example, aluminum (Al), silver (Ag), APC . In addition, the first electrode 200 according to an exemplary embodiment of the present invention may be composed of ITO / Ag / ITO stacked in sequence, but the present invention is not limited thereto.

The multi-layer electrode 210 is disposed on the passivation layer 180. The multi-layer electrode 210 is connected to the connection electrode 175 exposed by the groove provided in the passivation layer 180. One side of the multilayer electrode 210 is connected to the connection electrode 175 and the other side is connected to the second electrode 240 to connect the second electrode 240 and the auxiliary electrode 110. At this time, the multi-layer electrode 210 may be formed of the same material as the first electrode 200. In addition, the multiple charge wiring 210 may be made of a transparent conductive material having a relatively large work function value, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). The multilayer wiring 210 according to an exemplary embodiment of the present invention may be formed of at least two layers including aluminum (Al), silver (Ag), copper (Ag), copper (Pb)

The multilayer wiring 210 according to an exemplary embodiment of the present invention may include a first multilayer electrode 211, a second multilayer electrode 213, and a third multilayer electrode 215 stacked in that order.

The first multi-layer electrode 211 is disposed on the connection electrode 175. One side of the first multilayer electrode 211 is connected to the connection electrode 175 and the other side is connected to the second electrode 240 to connect the second electrode 240 and the auxiliary electrode 110 . In this case, the first multilayer electrode 211 according to an exemplary embodiment of the present invention may be made of a material that is not wet-etched when heat is applied, and may be formed of indium-tin-oxide (ITO) It is not limited.

The second multi-layer electrode 213 is disposed between the first multi-layer electrode 211 and the third multi-layer electrode 215. The second multilayer electrode 213 is shorter than the first and third multilayer electrodes 211 and 215 to form a multilayer electrode 210. That is, the multi-layer electrode 210 has an undercut shape by the second multi-layer electrode 213 having a shorter length than the first and third multi-layer electrodes 211 and 215. The multi-layer electrode 210 separates the organic light-emitting layer 230, which is disposed on the multi-layer electrode 210, by the shape of the undercut. The organic light emitting layer 230 is separated by an undercut shape of the multi-layer electrode 210 by being formed through a deposition process having excellent linearity of a deposition material such as evaporation. Accordingly, the multi-layer electrode 210 according to an exemplary embodiment of the present invention can be exposed without penetrating the organic light emitting layer 230 to the inner side, and the organic light emitting layer 230 is separated to prevent defective driving between pixels . At this time, the second multilayer electrode 213 may be composed of silver (Ag), but is not limited thereto.

The third multi-layer electrode 215 is disposed on the second multi-layer electrode 213. In this case, the third multi-layer electrode 215 according to an exemplary embodiment of the present invention may be made of a material which is not wet-etched when heat is applied, and may be made of indium-tin-oxide (ITO) It is not limited.

The multi-layer electrode 210 according to an exemplary embodiment of the present invention has an undercut shape to separate the organic light emitting layer 230 and expose the multi-layer electrode 210 to form the second electrode 240 and the multi- 210 can be connected. In more detail, the multilayer electrode 210 according to an exemplary embodiment of the present invention is formed by connecting one side of the first multilayer electrode 211 exposed by the undercut shape to the second electrode 240, The second electrode 240 is electrically connected to the connection electrode 175 and the auxiliary electrode 110 connected to the other side of the first electrode 211 and the resistance of the second electrode 240 is reduced by the auxiliary electrode 110.

In order to expose the connection electrode 175 connected to the auxiliary electrode 110, when the multilayer electrode 210 is not formed in an undercut shape, when the organic light emitting layer 240 is deposited, A mask pattern for masking the mask pattern is needed, and an additional process is performed accordingly. However, the organic light emitting display device according to an exemplary embodiment of the present invention can separate the organic light emitting layer 240 by the undercut shape of the multi-layer electrode 210 while the organic light emitting layer 230 is entirely deposited in the active region AA And the second electrode 240 may be connected to the exposed multi-layer electrode 210.

The bank 220 surrounds the passivation layer 180 and the planarization layer 190 and is disposed on the first electrode 200. The bank 220 may be overlapped with one side and the other side of the first electrode 200. These banks 220 partition the first electrode 200. At this time, the bank 220 may be formed of an organic insulating material such as polyimide resin, acryl resin, benzocyclobutene (BCB) or the like, but is not limited thereto.

The organic light emitting layer 230 is disposed on the first electrode 200. The organic light emitting layer 230 is entirely deposited on the first substrate 100 of the active area AA and is separated by the multi-layer electrode 210. The organic light emitting layer 230 may be formed by a combination of a hole injecting layer, a hole transporting layer, an emitting layer, an electron transporting layer, and an electron injecting layer But it is not limited thereto and can be changed into various structures known in the art.

The second electrode 240 is disposed on the organic light emitting layer 230. The second electrode 240 extends from the organic light emitting layer 230 and is disposed entirely on the first substrate 100 and is electrically connected to the auxiliary electrode 110 by the multi-layer electrode 210. When the voltage is applied to the second electrode 240 together with the first electrode 200, holes and electrons are transferred to the organic light emitting layer 230 through the hole transporting layer and the electron transporting layer, respectively, . At this time, the second electrode 240 may be a very thin metallic material having a low work function. For example, the second electrode 240 may be formed of a metallic material such as silver (Ag), titanium (Ti), aluminum (Al), molybdenum (Mo), or an alloy of silver (Ag) and magnesium have.

The second substrate 300 is disposed on the second electrode 240 so as to face the first substrate 100. An encapsulation layer may be disposed between the second substrate 300 and the first substrate 100, and the encapsulation layer may prevent moisture from penetrating into the organic light emitting display device. In addition, the sealing layer may include an adhesive material, and the first substrate 100 and the second substrate 300 may be bonded together. As the sealing layer, various materials known in the art can be used. At this time, the color filter 310 may be disposed on the second substrate 300.

The color filter 310 is disposed on the second substrate 300 so as to correspond to each pixel region. The color filter 310 may be composed of red, green, and blue color filters corresponding to the respective pixel regions, and a light shielding layer 320 for preventing color mixing between the red, green, and blue color filters .

The pad region PA includes a first signal pad 135, a second signal pad 155 and a third signal pad 177 on the first substrate 100 and the buffer layer 120.

The first signal pad 135 is disposed on the buffer layer 120. The first signal pad 135 is disposed on the same layer as the active layer 130 and may be made of the same material as the active layer 130.

The second signal pad 155 is disposed on the first signal pad 135. The second signal pad 155 may be formed of the same material as the gate electrode 150. At this time, the second signal pad 155 may be formed of, for example, molybdenum, aluminum, chromium, gold, titanium, nickel, (Cu), or an alloy thereof. However, the present invention is not limited thereto.

The third signal pad 177 is disposed on the interlayer insulating layer 160 and is connected to the second signal pad 155 through a contact hole provided in the interlayer insulating layer 160. At this time, the third signal pad 177 may be formed of, for example, molybdenum, aluminum, chromium, gold, titanium, nickel, neodymium, (Cu), or an alloy thereof. In particular, the connecting electrode 175 according to an exemplary embodiment of the present invention may be formed of, for example, MoTi / Cu / MoTi stacked in sequence, but is not limited thereto.

In the organic light emitting diode display according to an embodiment of the present invention, the multi-layer electrode 210 disposed in the active area AA has an undercut shape, so that the organic light emitting layer 230 is separated, It is effective. The organic light emitting display according to an exemplary embodiment of the present invention includes a multilayer electrode 210 and an organic light emitting layer 240, It is possible to expose the substrate. Accordingly, in the organic light emitting diode display according to an exemplary embodiment of the present invention, one side of the exposed first multilayer electrode 211 is connected to the second electrode 240, The second electrode 240 is electrically connected to the electrode 175 and the auxiliary electrode 110 and has the effect of reducing the resistance of the second electrode 240 by the auxiliary electrode 110.

2 to 9 are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment of the present invention. This relates to the method of manufacturing the organic light emitting diode display of FIG. Therefore, the same reference numerals are assigned to the same components, and repetitive descriptions of the repetitive portions in the materials, structures, etc. of the respective components are omitted.

2, an auxiliary electrode 110 is formed on a first substrate 100, and a buffer layer 120 is formed. Then, a thin film transistor T, a connecting electrode 175, and signal pads 135, 155, and 177 are formed on the buffer layer 120.

The process of forming the thin film transistor T includes forming an active layer 130 on the first substrate 100, forming a gate insulating layer 140 on the active layer 130, forming a gate insulating layer 140 An interlayer insulating layer 160 is formed on the gate electrode 150 and a contact hole is formed in the interlayer insulating layer 160 to form a source electrode 150 on the interlayer insulating layer 160. [ And the drain electrodes 171 and 173 are connected to the active layer 130 through the contact holes.

The thin film transistor (TFT) may be formed by various methods known in the art.

In the process of forming the connection electrode 175, a contact hole is formed in the buffer layer 120 and the interlayer insulating layer 160, and the connection electrode 175 is formed on the interlayer insulating layer 160 through the contact hole, 110).

The process of forming the signal pads 135, 155 and 177 includes forming a first signal pad 135 on the buffer layer 120 and forming a second signal pad 155 on the first signal pad 135 An interlayer insulating layer 160 is formed on the second signal pad 155 and a contact hole is formed in the interlayer insulating layer 160. A third signal pad 177 is formed on the interlayer insulating layer 160 And the second signal pad 155 through the contact hole. At this time, the process of forming the first signal pad 135 may be performed at the same time as the process of forming the active layer 130 of the TFT. The process of forming the second signal pad 155 may be performed simultaneously with the process of forming the gate electrode 150 of the TFT. The process of forming the third signal pad 177 may be performed simultaneously with the process of forming the connection electrode 175, the source electrode 171, and the drain electrode 173.

A thin film transistor T, a connection electrode 175 and signal pads 135, 155 and 177 are formed on the buffer layer 120 and then a passivation layer 180 is formed on the entire upper surface of the first substrate 100 A planarization layer 190 is formed on the passivation layer 180 and exposed to the connection electrodes 175, the drain electrodes 173 and the signal pads 135, 155 and 177, And a multi-layer wiring 210a is formed on the top surface. The multilayer wiring 210a may be composed of a first multilayer wiring 211a, a second multilayer wiring 213a, and a third multilayer wiring 215a sequentially stacked.

Then, as shown in FIG. 3, the bank 220 is patterned by using a half tone mask on the upper portion of the thin film transistor T and the connection electrode 175.

Then, as shown in FIG. 4, the multilayer wiring 210a is patterned by using the bank 220 as a mask to form the first electrode 200 and the multilayer electrode 210. Next, as shown in FIG.

Then, as shown in FIG. 5, a portion of the bank 220 formed on the first electrode 200 and the multilayer electrode 210 is etched and removed by an ashing process.

6, heat is applied to the banks 220 by a curing process to increase the spreadability, and the banks 220 are flowed so as to cover both sides of the first electrode 200. Next, as shown in FIG.

Then, as shown in FIG. 7, the first electrode 200 and the multi-layer electrode 210 are heat-treated, and then the multi-layer electrode 210 is formed in an undercut shape by a wet etching process. The multi-layer electrode 210 of the OLED display according to an exemplary embodiment of the present invention includes a first multi-layer electrode 211, a second multi-layer electrode 213, and a third multi-layer electrode 215 sequentially stacked. And the first multilayer electrode 211 and the third multilayer electrode 215 may be made of indium-tin-oxide (ITO), for example. Indium-tin-oxide (ITO) is a conductive material. When amorphous indium-tin-oxide (ITO) is thermally treated, it becomes indium-tin oxide (ITO) Even if you do not cut it. Accordingly, the exposed portions of the first electrode 200 and the first and third multi-layer electrodes 213 that are heat-treated are not scraped even by the wet etching process. However, the second multilayer electrode 213 exposed to the outside is fired inward by the wet etching process. Accordingly, the multi-layer electrode 210 according to an exemplary embodiment of the present invention has an undercut shape by the second multi-layer electrode 213 having a shorter length than the first and third multi-layer electrodes 211 and 215 .

8, an organic light emitting layer 230 and a second electrode 240 are formed on the entire surface of the active region AA of the first substrate 100. Referring to FIG. The organic light emitting layer 230 is formed by an evaporation process with excellent linearity of the evaporation material such as evaporation and thus is separated by the undercut shape of the multi-layer electrode 210. The second electrode 240 is connected to the first multilayer electrode 211 exposed by the separated organic light emitting layer 230.

9, the second substrate 300, on which the color filter 310 and the light shielding layer 320 are formed, is bonded to the first substrate 100. Next, as shown in FIG.

The organic light emitting diode display according to an exemplary embodiment of the present invention may include an undercut multi-layer electrode 210 without a separate mask pattern for exposing the connection electrode 175 connected to the auxiliary electrode 110, The second electrode 240 may be electrically connected to the auxiliary electrode 110 while the entire surface of the second electrode 240 is deposited.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100: first substrate 110: auxiliary electrode
120: buffer layer 130: active layer
140: gate insulating layer 150: gate electrode
160: interlayer insulating layer 171, 173: source and drain electrodes
175: connecting electrode 180: passivation layer
190: planarization layer 200: first electrode
210: multilayer electrode 220: bank
230: organic light emitting layer 240: second electrode
300: second substrate 310: color filter
320: Shading layer

Claims (10)

An auxiliary electrode disposed on the first substrate;
A thin film transistor spaced apart from the auxiliary electrode;
A first electrode disposed on the thin film transistor and electrically connected to the thin film transistor;
A multi-layer electrode disposed on the auxiliary electrode and electrically connected to the auxiliary electrode;
An organic light emitting layer disposed on the first electrode; And
And a second electrode disposed on the organic light emitting layer and connected to the multi-layer electrode, wherein the organic light emitting layer is separated by the multi-layer electrode. The method according to claim 1,
Wherein the multi-layer electrode has an undercut shape. The method according to claim 1,
The multi-layer electrode includes a first multi-layer electrode, a second multi-layer electrode, and a third multi-layer electrode which are sequentially stacked,
Wherein the second multi-layer electrode is shorter than the first and third multi-layer electrodes. The method of claim 3,
And the second electrode is connected to the first multi-layer electrode. The method of claim 3,
Wherein the first and third multi-layer electrodes are made of a material that is not wet-etched when heat is applied thereto. Forming an auxiliary electrode on the first substrate;
Forming a thin film transistor so as to be spaced apart from the auxiliary electrode;
A multi-layer electrode disposed on the auxiliary electrode and electrically connected to the auxiliary electrode, and a first electrode disposed on the thin film transistor and electrically connected to the thin film transistor;
Forming a bank on the multilayer electrode and the first electrode;
Forming the multi-layer electrode in an undercut shape;
Forming an organic light emitting layer on the first electrode;
And forming a second electrode on the organic light emitting layer, wherein the organic light emitting layer is separated by the multi-layer electrode. The method according to claim 6,
The multi-layer electrode includes a first multi-layer electrode, a second multi-layer electrode, and a third multi-layer electrode which are sequentially stacked,
Wherein the second multi-layer electrode is shorter than the first and third multi-layer electrodes. 8. The method of claim 7,
And the second electrode is electrically connected to the first multi-layer electrode. The method according to claim 6,
The forming of the multi-layer electrode in an undercut shape includes:
Heat treating the multilayer electrode; And
And wet-etching the multi-layer electrode. The method according to claim 6,
Wherein forming the bank comprises:
Patterning the bank on the first electrode;
Etching the bank to expose the first electrode; And
And applying heat to the banks to flow to cover both sides of the first electrodes.

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