KR20160112163A - Oxy-nitride phosphor and light emitting device package - Google Patents

Abstract

The present invention relates to a phosphor, particularly a phosphor capable of realizing a broad full width at half maximum in a light emitting spectrum and a light emitting device package using the same. The present invention provides an oxynitride phosphor having a clear peak at a diffraction angle in a range of 0.7 ~ 11.7 , 14.2 ~ 15.2 , 16.3 ~ 17.3 , 21.6 ~ 22.6 , 23.2 ~ 24.2 , 27.4 ~ 28.4 , 30.3 ~ 30.8 , 30.8 ~ 31.8 , 31.0 ~ 32.0 , 31.4 ~ 32.4 , 31.7 ~ 32.7 , 32.6 ~ 33.6 , 33.1 ~ 34.1 , 33.3 ~ 34.3 , 33.7 ~ 34.7 , 36.8 ~ 37.8 , 37.0 ~ 38.0 , 37.7 ~ 38.7 , 38.4 ~ 39.4 and 38.8 ~ 39.8 , as determined by X-ray diffractometry (2).

Description

[0001] The present invention relates to an oxynitride phosphor and a light emitting device package using the same,

The present invention relates to a phosphor, and more particularly to an oxynitride phosphor and a light emitting device package using the same.

BACKGROUND ART [0002] Light emitting diodes (LEDs) are one of the next-generation light emitting device candidates that can replace fluorescent light, which is one of the most typical conventional lighting.

LEDs have less power consumption than conventional light sources, and unlike fluorescent lamps, they do not contain mercury and can be said to be environmentally friendly. In addition, it has a longer life span and faster response time than conventional light sources.

Such an LED can be used with a phosphor that emits light of various colors by absorbing light emitted from the LED. Such phosphors can usually emit yellow, green and red light.

Such a phosphor and an LED lighting using a blue light emitting LED are rapidly expanding and applied to real life.

As described above, although the spread of LED illumination is progressing very rapidly, high quality of light is required. Specifically, white LED lighting with high color rendering properties is required, and white LED lighting produced from phosphors currently in practical use is inadequate in color rendering properties.

In order to improve the color rendering property, it is necessary to adjust the emission spectrum close to the continuous spectrum such as the sunlight. For this purpose, it is necessary to broaden the half width of the emission spectrum of the phosphor used.

Various phosphors have been developed to date, but among them, oxynitrides appear to be promising host crystals due to their chemical stability.

In the prior patent reference 1, a phosphor by a composition of MSi ₂ O ₂ N ₂ (M is Ca, Sr, Ba) is proposed, and a matter that can emit light in a green to yellow wavelength region using Eu as an activator is published have.

The prior art document 2 proposes a phosphor using MSi ₃ O ₄ N ₂ crystals (M is Ca, Sr, Ba) with a rare earth element as an activator, which also reports green to yellow luminescence.

In the prior art document 3, a phosphor using Eu as an activator in Ba ₂ Si ₇ O ₁₀ N ₄ crystal as a typical composition has been proposed, and green light emission has been reported.

Prior Patent Document 4, _{Sr 2 Si 4 ON 6: Eu} , Sr 3 Si 7 ON 10: Eu, Sr 3 Si 8 ON 12: Eu, Sr 3 Si 8 ON 12: Eu, Sr 4 Si 7 O 3 N 10: Eu, Sr ₂ Si ₃ O ₂ N ₄ : Eu, Sr _{2 .6} Ba _{0 .2} Si ₆ O ₃ N ₈ : Eu _{0 .2} , Sr _{1 .5} Ba _{1 .5} Si ₇ ON ₁₀ : Eu, SrBa ₂ Si ₇ ON ₁₀ : Eu have been proposed, and all of them have been reported to emit green light.

However, the full width at half maximum of the luminescence of the phosphor disclosed in this prior patent document is 100 nm or less, and does not show sufficient peak diffusion to obtain high color rendering property.

Therefore, it is required to realize a phosphor having a wide half-width of an emission spectrum capable of achieving high color rendering.

1. International Patent Application (PCT) Publication No. WO2004 / 030109 2. Japanese Patent Application Laid-Open No. 2007-223864 2. Japanese Patent Application Laid-Open No. 2008-138156 4. U.S. Patent Application Publication No. 2011/0163322

An oxynitride phosphor capable of realizing a phosphor having a wide half-width of an emission spectrum in the oxynitride phosphor, and a light emitting device package using the same.

According to another aspect of the present invention, there is provided an oxynitride phosphor which has an X-ray diffraction angle 2θ of 10.7 to 11.7 °, 14.2 to 15.2 °, 16.3 to 17.3 °, 21.6 to 22.6 ° and 23.2 to 24.2 ° 31.4 to 32.4 °, 31.7 to 32.7 °, 32.6 to 33.6 °, 33.1 to 34.1 °, 33.3 to 34.3 °, 33.7 to 34.7 °, and 27.4 to 28.4 °, 30.3 to 30.8 °, 30.8 to 31.8 °, , 36.8 to 37.8 °, 37.0 to 38.0 °, 37.7 to 38.7 °, 38.4 to 39.4 ° and 38.8 to 39.8 °, respectively.

The oxynitride phosphor is a composition containing at least M element, A element, N element, O element and R element and is represented by a general formula MaAbOcNd: Re wherein M is Mg, Ca, Sr, Ba, Zn, One or two or more elements selected from divalent rare earth elements other than the R element, A is one or two or more elements selected from the group consisting of tetravalent metal elements, O is oxygen, N is nitrogen, And R is at least one element selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, The element R and the element R satisfy the relationships 2.5 ≤ (a + e) ≤ 3.5, 7.5 ≤ b ≤ 8.5, 3 ≤ c ≤ 5, 9 ≤ d ≤ 11, 13 ≤ (c + d) ≤ 15, and 0.0001 ≤ e ≤ 0.2 . ≪ / RTI >

Here, each parameter of the above general formula can satisfy at least one of (a + e) = 3, b = 8, c = 4, and d = 10.

Here, the M element may be Sr.

Here, the M element is a mixed state of Sr and Ca, and may be Ca / (Sr + Ca) < 0.40, calculated as the number of contained atoms.

Here, the A element may be Si.

Here, the R element may be Eu.

Herein, the oxynitride phosphor is a composition containing at least M element, A element, B element, C element, N element, O element and R element and is represented by a general formula MaBfAbCgOcNd: At least one element selected from divalent rare earth elements other than Sr, Ba, Zn and R elements; A is at least one element selected from the group consisting of tetravalent metal elements; One or more elements selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; Wherein R is at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, (A + e + f)? 3.5, 7.5? (B + g), and the elements M, A, B, C, N, ? 8.5, 3? C? 5, 9? D? 11, 13 ? (C + d)? 15, 0.0001? E? 0.2, and f = g.

Here, each parameter of the above general formula can satisfy at least any one of (a + e + f) = 3, (b + g) = 8, c = 4 and d = 10.

Here, the M element may be Sr.

Here, the A element may be Si.

Here, the element B may be La.

Here, the C element may be Al.

Here, the R element may be Eu.

Here, the peak point of the luminescence spectrum excited by blue light may be 560 nm or more and 640 nm or less.

Here, the half width of the luminescence spectrum excited by blue light may be 110 nm or more and 130 nm or less.

According to the present invention, as the oxynitride phosphor having a new crystal structure, it is possible to obtain a phosphor capable of emitting light having a wide emission spectrum half width.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing an XRD pattern simulated for crystal structures of Example 1 and Comparative Example 1 of the present invention. FIG.
2 is a diagram showing an emission spectrum by 450 nm excitation light of Example 1 and Comparative Example 1 of the present invention.
3 is a diagram showing the emission spectra of Examples 1 to 4 and Comparative Example 3 of the present invention.
Fig. 4 is a diagram showing emission spectra by 450 nm excitation light of Examples 1 and 5 to 10 of the present invention in which the addition amount of Eu is changed. Fig.
Fig. 5 is a diagram showing luminescence spectra by 450 nm excitation light of Example 11 and Comparative Example 4 of the present invention in which La is added. Fig.
6 is a cross-sectional view showing an example of a light emitting device package using the oxynitride fluorescent material of the present invention.
7 is a cross-sectional view showing another example of the light emitting device package using the oxynitride fluorescent material of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.

It will be appreciated that when an element such as a layer, region or substrate is referred to as being present on another element "on," it may be directly on the other element or there may be an intermediate element in between .

Although the terms first, second, etc. may be used to describe various elements, components, regions, layers and / or regions, such elements, components, regions, layers and / And should not be limited by these terms.

According to the present invention, in the oxynitride phosphor, the X-ray diffraction angle 2θ is in the range of 10.7 to 11.7 °, 14.2 to 15.2 °, 16.3 to 17.3 °, 21.6 to 22.6 °, 23.2 to 24.2 °, 27.4 to 28.4 °, 30.3 to 30.8, 30.8 to 31.8, 31.0 to 32.0, 31.4 to 32.4, 31.7 to 32.7, 32.6 to 33.6, 33.1 to 34.1, 33.3 to 34.3, 33.7 to 34.7, 36.8 to 37.8, It is possible to provide an oxynitride phosphor having a distinct peak in the range of 37.0 to 38.0 DEG, 37.7 to 38.7 DEG, 38.4 to 39.4 DEG and 38.8 to 39.8 DEG.

As a means for obtaining such an X-ray diffraction pattern, a composition containing at least M element, A element, N element, O element and R element is represented by the general formula (1) MaAbOcNd: Re and M is Mg, Ca, Sr , At least one element selected from divalent rare earth elements other than Ba, Zn and R elements, A is at least one element selected from the group consisting of tetravalent metal elements, O is oxygen, N is at least one element selected from the group consisting of Nitrogen and R are one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, and the M element, the A element, the N element, the O The element R and the element R satisfy the relationships 2.5 ≤ (a + e) ≤ 3.5, 7.5 ≤ b ≤ 8.5, 3 ≤ c ≤ 5, 9 ≤ d ≤ 11, 13 ≤ (c + d) ≤ 15, and 0.0001 ≤ e ≤ 0.2 The above X-ray diffraction pattern can be obtained.

Here, each parameter of the general formula (1) can satisfy at least any one of (a + e) = 3, b = 8, c = 4, and d =

Here, the M element may be Sr.

The element M is a mixed state of Sr and Ca, and may be Ca / (Sr + Ca) < 0.40, calculated as the number of atoms contained.

Here, the element A may be Si. Further, the R element may be Eu.

As a means for obtaining such an X-ray diffraction pattern, a composition containing at least M element, A element, B element, C element, N element, O element and R element is represented by the formula (2) MaBfAbCgOcNd: Re , M is at least one element selected from divalent rare earth elements other than Mg, Ca, Sr, Ba, Zn and R elements, A is at least one element selected from the group consisting of tetravalent metal elements And B is at least one element selected from trivalent Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, , Ga and In, O is oxygen, N is nitrogen and R is selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb (A + e + f)? 3.5, 7.5? (B + g), wherein the element A, element A, element B, element C, element N, element O and element R are one or more elements selected from the group consisting of ) ≤ 8.5, 3 ≤ c ≤ 5, 9 ≤ d ≤ 11, 13 ≤ (c + d) ≤ 15, 0.0001? E? 0.2, and f = g can be synthesized to obtain the above X-ray diffraction pattern.

Here, each parameter of the general formula (2) can satisfy at least any one of (a + e + f) = 3, (b + g) = 8, c = 4, d = 10.

Here, the M element may be Sr. Further, the element A may be Si. Further, the element B may be La. Further, the C element may be Al. Further, the R element may be Eu.

Here, in the phosphor represented by the general formula (1) or (2) and having the composition described above, the peak point of the luminescence spectrum excited by blue light may be 560 nm or more and 640 nm or less.

Here, the half-width of the luminescence spectrum excited by blue light in the phosphor represented by the general formula (1) or (2) and having the composition described above may be 110 nm or more and 130 nm or less.

<Examples>

Hereinafter, a method of synthesizing the oxynitride phosphors of the present invention will be described. However, the present invention is not limited to this synthesis method.

First, the carbonate or oxide of the M element, the oxide of the element A, the nitride of the element A, the oxide of the element B, the nitride of the element C and the oxide of the element R are mixed as a raw material of the oxynitride until the predetermined non-uniformity. As the M element raw material, a metal nitride, a hydride, or the like may be used. As the element A, element B and element C, respective oxides, nitrides, and groups may be used. Alloys of some constituent elements of the material and oxides and nitrides of alloys may also be used. However, nitrogen feedstock is always included in the constituents.

Hereinafter, sufficient characteristics can be obtained that can withstand the approximate compositional values of the raw materials shown in the examples (or the front and rear values of such compositions).

On the other hand, a substance acting as a flux, for example, CaF ₂ , SrF ₂ , NaCl, KCl, CaCl ₂ , SrCl _2, etc. may be mixed at the same time.

These raw material mixtures are placed in a boron nitride crucible or the like and fired at 1500 to 1900 占 폚 in a reducing atmosphere or an inert atmosphere. Molybdenum crucible tungsten crucibles may be used in addition to boron nitride crucibles.

The firing temperature is more preferably from 1600 to 1800 ° C. The firing time is 3 hours or more, and more preferably 6 hours or more.

The reducing atmosphere is a nitrogen-hydrogen atmosphere, ammonia atmosphere, and nitrogen-ammonia atmosphere. The inert atmosphere is a nitrogen atmosphere.

Further, the remaining materials are further mixed and fired in a sintered product obtained by mixing and firing a part of these materials, and a desired phosphor can be obtained.

The fired product thus obtained is crushed and washed with, for example, water from which impurities have been removed, such as distilled water and purified water, or strong acids such as nitric acid, hydrochloric acid and sulfuric acid.

The oxynitride of the present embodiment is not limited by this production method. It can be prepared according to the gas phase reaction liquid reaction as well as the solid phase reaction described above.

Table 1 below shows the composition of each example described below.

Composition (g) SrCO ₃ CaCO ₃ Si ₃ N ₄ SiO ₂ Eu ₂ O ₃ La ₂ O ₃ AlN Example 1 1.1133 0.9596 0.0271 Example 2 0.8777 0.1520 0.9467 0.0267 Example 3 0.7289 0.1901 0.9472 0.1336 Example 4 0.6790 0.2301 0.9559 0.1348 Example 5 1.0484 0.9129 0.0386 Example 6 1.0365 0.9120 0.0514 Example 7 1.0128 0.9101 0.0771 Example 8 0.9892 0.9082 0.1025 Example 9 0.9657 0.9063 0.1279 Example 10 0.9074 0.9017 0.1909 Example 11 0.8555 0.8694 0.1275 0.1180 0.0297 Comparative Example 1 1.1514 0.6166 0.2039 0.0280 Comparative Example 2 1.1044 0.8923 0.0764 0.0269 Comparative Example 3 0.6745 0.3153 0.9823 0.0277 Comparative Example 4 0.8537 0.9014 0.1272 0.1178

&Lt; Example 1 >

Materials SrCO _3, Si ₃ N _4, and Eu ₂ O was then weighed in a value base ₃ in Table 1 using a bowl formed into pellets and the mixture obtained by mixing for 30 minutes or more into a boron nitride crucible N ₂ Firing is carried out in a pressurized inert atmosphere using a gas at about 1700 DEG C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

&Lt; Example 2 > (Ca Emulsion 20%)

The raw materials CaCO ₃ , SrCO ₃ , Si ₃ N ₄ , and Eu ₂ O ₃ were weighed and weighed to the values shown in Table 1, and then mixed by using a bowl for 30 minutes or more. The mixture was molded into pellets and placed in a boron nitride crucible And fired in a pressurized inert atmosphere using N ₂ gas at about 1700 ° C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

&Lt; Example 3 > (Ca Emulsion 25%)

The raw materials CaCO ₃ , SrCO ₃ , Si ₃ N ₄ , and Eu ₂ O ₃ were weighed and weighed to the values shown in Table 1, and then mixed by using a bowl for 30 minutes or more. The mixture was molded into pellets and placed in a boron nitride crucible And fired in a pressurized inert atmosphere using N ₂ gas at about 1700 ° C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

&Lt; Example 4 > (Ca Emulsion 30%)

The raw materials CaCO ₃ , SrCO ₃ , Si ₃ N ₄ , and Eu ₂ O ₃ were weighed and weighed to the values shown in Table 1, and then mixed by using a bowl for 30 minutes or more. The mixture was molded into pellets and placed in a boron nitride crucible And fired in a pressurized inert atmosphere using N ₂ gas at about 1700 ° C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

Example 5 (Composition of Eu 0.03)

Materials SrCO _3, Si ₃ N _4, and Eu ₂ O was then weighed in a value base ₃ in Table 1 using a bowl formed into pellets and the mixture obtained by mixing for 30 minutes or more into a boron nitride crucible N ₂ Firing is carried out in a pressurized inert atmosphere using a gas at about 1700 DEG C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

Example 6 (Composition of Eu 0.04)

Materials SrCO _3, Si ₃ N _4, and Eu ₂ O was then weighed in a value base ₃ in Table 1 using a bowl formed into pellets and the mixture obtained by mixing for 30 minutes or more into a boron nitride crucible N ₂ Firing is carried out in a pressurized inert atmosphere using a gas at about 1700 DEG C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

Example 7 (Composition of Eu 0.06)

Materials SrCO _3, Si ₃ N _4, and Eu ₂ O was then weighed in a value base ₃ in Table 1 using a bowl formed into pellets and the mixture obtained by mixing for 30 minutes or more into a boron nitride crucible N ₂ Firing is carried out in a pressurized inert atmosphere using a gas at about 1700 DEG C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

Example 8 (Composition of Eu 0.08)

Materials SrCO _3, Si ₃ N _4, and Eu ₂ O was then weighed in a value base ₃ in Table 1 using a bowl formed into pellets and the mixture obtained by mixing for 30 minutes or more into a boron nitride crucible N ₂ Firing is carried out in a pressurized inert atmosphere using a gas at about 1700 DEG C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

&Lt; Example 9 > (Eu 0.10 Composition)

Materials SrCO _3, Si ₃ N _4, and Eu ₂ O was then weighed in a value base ₃ in Table 1 using a bowl formed into pellets and the mixture obtained by mixing for 30 minutes or more into a boron nitride crucible N ₂ Firing is carried out in a pressurized inert atmosphere using a gas at about 1700 DEG C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

&Lt; Example 10 > (Eu 0.15 Composition)

Material SrCO _3, Si ₃ N _4, and Eu ₂ O was then weighed in a value base ₃ in Table 1 using a bowl formed into pellets and the mixture obtained by mixing for 30 minutes or more into a boron nitride crucible N ₂ Firing is carried out in a pressurized inert atmosphere using a gas at about 1700 DEG C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

Example 11 (La 10%, Al added)

The raw materials SrCO ₃ , La ₂ O ₃ , Si ₃ N ₄ , AlN and Eu ₂ O ₃ were weighed and weighed to the values shown in Table 1, and then mixed by using a bowl for 30 minutes or more. The mixture was molded into pellets, Baked in a boron crucible and fired in a pressurized inert atmosphere using N ₂ gas at about 1700 ° C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

&_Lt; Comparative Example 1 > (Sr _{1 .02} Si ₂ O ₂ N ₂ phase)

The raw materials SrCO ₃ , Si ₃ N ₄ , SiO ₂ and Eu ₂ O ₃ were weighed to the values shown in Table 1, and then mixed by using a bowl for 30 minutes or more. The resulting mixture was pelletized and placed in a boron nitride crucible Firing is carried out in a reducing atmosphere using N ₂ 4% H ₂ gas at about 1500 ° C. for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

&Lt; Comparative Example 2 > (O amount is high)

The raw materials SrCO ₃ , Si ₃ N ₄ , SiO ₂ and Eu ₂ O ₃ were weighed to the values shown in Table 1, and then mixed by using a bowl for 30 minutes or more. The resulting mixture was pelletized and placed in a boron nitride crucible Firing is carried out in a pressurized inert atmosphere using N ₂ gas at about 1700 ° C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

&Lt; Comparative Example 3 > (Substituting Ca 40%) [

The raw materials SrCO ₃ , CaCO ₃ , Si ₃ N ₄ and Eu ₂ O ₃ were weighed and weighed to the values shown in Table 1, and then mixed in a bowl for 30 minutes or longer. The mixture was molded into pellets and placed in a boron nitride crucible Firing is carried out in a pressurized inert atmosphere using N ₂ gas at about 1700 ° C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

Comparative Example 4 (La 10%, no addition of Al)

The raw materials SrCO ₃ , La ₂ O ₃ , Si ₃ N ₄ and Eu ₂ O ₃ were weighed and weighed to the values shown in Table 1, and then mixed by using a bowl for 30 minutes or longer. The mixture was molded into pellets, And fired in a pressurized inert atmosphere using N ₂ gas at about 1700 ° C and about 0.9 MPa for about 4 hours.

After sintering, it is pulverized in a bowl, washed with 1 N nitric acid aqueous solution at room temperature for 15 minutes, then sedimented and recovered. Thereafter, the phosphor may be washed twice to remove the acid.

Evaluation of the crystal phase was carried out for each of the Examples and Comparative Examples. X-ray diffraction (XRD) ("SmartLab" of RIGAKU Co., Ltd.) was used to evaluate the crystal phase. The measurement was carried out in a range of 2? = 10 to 40 占 using a CuKa line with an X-ray.

As a result of the analysis of the obtained XRD pattern, Described in 01-076-3141 has been attributed to the _{Sr 1 .02 Si 2 O 2 N} 2. In Example 1, there is no crystalline phase corresponding to the ICDD database.

The XRD results of Example 1 were analyzed in detail and the results of indexing the pattern are shown in Table 3 below. In this way, the space group P 1 21 / n 1 (No. 14 setting 2) shown in Table 2 is expressed by a = 4.8259 Å, b = 24.2157 Å, c = 10.566 Å, and β = 90.634 degrees Each index was assigned by monoclinic.

Space group P 1 2 ₁ / n 1 (No.14 setting 2) a (A) 4.8259 b (A) 24.2157 c (A) 10.566 β (°) 90.634

Peak No. 2? (Deg) d (A) h k l One 11.13 7.944 0 2 One 2 14.66 6.036 0 4 0 3 16.81 5.271 0 0 2 4 17.20 5.150 0 One 2 5 18.36 4.827 0 2 2 6 22.04 4.029 0 6 0 7 22.38 3.969 0 4 2 8 23.61 3.765 One 4 0 9 25.55 3.483 0 One 3 10 26.36 3.378 One 5 0 11 27.11 3.286 0 7 One 12 27.82 3.204 0 6 2 13 28.96 3.080 One 6 0 14 29.28 3.047 0 4 3 15 30.72 2.907 0 8 One 16 31.27 2.858 One 0 -3 17 31.41 2.846 0 5 3 18 31.83 2.809 One 7 0 19 32.15 2.782 One 2 -3 20 33.03 2.710 One 7 One 21 33.54 2.670 One 6 -2 22 33.78 2.651 0 6 3 23 34.13 2.624 0 8 2 24 34.39 2.605 0 9 One 25 34.68 2.584 One 4 -3 26 36.01 2.492 One 8 -One 27 37.13 2.419 0 10 0 28 37.48 2.398 2 One 0 29 38.10 2.360 2 2 0 30 38.83 2.317 0 5 4 31 39.22 2.295 One 8 2 32 39.78 2.264 One 2 4

Table 4 below shows the crystal structure parameters obtained by performing the structural analysis by the single crystal X-ray scattering of the crystals obtained in Example 1. This crystal was found to be represented by the composition formula Sr ₃ Si ₈ O ₄ N ₁₀ . The crystalline phase of the book obtained from this component is an unknown crystal and was first discovered in this review. This crystal has a structure in which Sr penetrates between layers of Si (N, O) 4 tetrahedrons connected via vertex sharing of N atoms.

In addition, a part of Sr shows an irregular distribution. When the R element is occupied at the Sr site of the crystal structure, the phosphor emits light. Hereinafter, this crystal composition is referred to as Sr ₃ Si ₈ O ₄ N ₁₀ phase.

atom x y z B g Site Sr 0.08338 (16) 0.22423 (3) 0.20577 (6) 0.01325 (17) One 4d Sr 0.1415 (3) -0.01311 (6) 0.18329 (13) 0.0197 (3) 0.5 4d Sr 0.3671 (3) -0.02538 (6) 0.06245 (13) 0.0195 (3) 0.5 4d Sr 0.3821 (3) -0.00383 (7) 0.56614 (15) 0.0251 (4) 0.5 4d Sr -0.1180 (3) -0.04302 (6) 0.31478 (17) 0.0255 (4) 0.5 4d Si -0.4112 (4) 0.30656 (8) 0.06614 (17) 0.0087 (4) One 4d Si -0.4096 (4) 0.09469 (7) 0.20266 (18) 0.0088 (4) One 4d Si -0.4146 (4) 0.30277 (8) 0.34107 (16) 0.0091 (4) One 4d Si 0.0869 (4) 0.11075 (8) 0.04956 (17) 0.0096 (4) One 4d Si -0.4162 (4) 0.17629 (8) 0.42119 (17) 0.0094 (4) One 4d Si -0.4112 (4) 0.18045 (8) -0.01428 (17) 0.0091 (4) One 4d Si 0.0854 (4) 0.10419 (8) 0.35594 (17) 0.0094 (4) One 4d Si -0.4175 (4) 0.14422 (8) 0.70270 (18) 0.0098 (4) One 4d O -0.3523 (12) 0.0299 (2) 0.1971 (5) 0.0183 (12) One 4d O -0.3930 (13) 0.0783 (2) 0.6977 (5) 0.0234 (12) One 4d O 0.1370 (12) 0.0545 (2) -0.0237 (5) 0.0223 (12) One 4d O 0.1270 (11) 0.0433 (2) 0.4118 (5) 0.0199 (12) One 4d N -0.3727 (12) 0.2342 (2) 0.3387 (5) 0.0097 (12) One 4d N -0.3414 (13) 0.2398 (2) 0.0544 (5) 0.0124 (12) One 4d N -0.2603 (13) 0.1256 (2) 0.0709 (5) 0.0110 (12) One 4d N -0.2607 (12) 0.1205 (2) 0.3401 (5) 0.0113 (12) One 4d N -0.7629 (12) 0.1575 (2) 0.4407 (5) 0.0122 (13) One 4d N -0.7623 (12) 0.1095 (2) 0.2028 (5) 0.0111 (12) One 4d N -0.2640 (12) 0.1779 (2) 0.5735 (5) 0.0114 (12) One 4d N -0.7621 (12) 0.1682 (2) 0.7063 (5) 0.0117 (12) One 4d N -0.7620 (12) 0.3234 (2) 0.3350 (5) 0.0110 (12) One 4d N 0.2347 (12) 0.1666 (2) -0.0250 (5) 0.0100 (12) One 4d

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing an XRD pattern simulated for crystal structures of Example 1 and Comparative Example 1 of the present invention. FIG. As described above, Sr _{1 .02} Si ₂ O ₂ N ₂ : Eu, which is a known phosphor, clearly shows a different XRD pattern.

The XRD patterns simulated by the crystal structure of Example 1 were compared with the XRD patterns of the respective examples. As a result, the peak positions of the XRD patterns were exactly the same, and the XRD pattern of each example showed that the Sr ₃ Si ₈ O ₄ N ₁₀ Peaks that could not be reported were not reported. Thus, each example can be viewed as a single compound.

A list of XRD peaks extracted from the XRD pattern of each example is shown in Table 5 below. Since the proportions of the constituent elements are different in each embodiment, slight variations are seen. This is because the ionic radius of the constituent elements is different. For example, if the solubility of Ca with a small atomic radius is increased in Sr, the crystal lattice becomes small, and as a result, the XRD peak shifts to a wide angle. The positions of the peaks with respect to the respective surface indices are in the range of +/- 0.5 degrees from the mean value of each example. Therefore, when the XRD peak of the present invention exists in the range of ± 0.5 ° from the average value of each peak position, it can be judged that it is a Sr ₃ Si ₈ O ₄ N ₁₀ crystal phase.

No. Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 h k l One 11.13 11.19 11.19 11.20 11.15 11.17 11.17 11.17 11.15 11.20 11.15 0 2 One 2 14.66 14.74 14.75 14.77 14.66 14.70 14.69 14.71 14.69 14.70 14.68 0 4 0 3 16.81 16.83 16.83 16.80 16.81 16.83 16.83 16.85 16.83 16.85 16.79 0 0 2 4 17.20 17.24 17.23 17.26 17.21 17.22 17.20 17.25 17.20 17.24 17.20 0 One 2 5 18.36 18.40 18.42 18.42 18.36 18.35 18.39 18.40 18.37 18.40 18.32 0 2 2 6 22.04 22.15 22.17 22.19 22.05 22.08 22.06 22.09 22.07 22.09 22.06 0 6 0 7 22.38 22.43 22.41 22.48 22.38 22.38 22.40 22.38 22.37 22.40 22.34 0 4 2 8 23.61 23.73 23.75 23.76 23.61 23.64 23.63 23.65 23.63 23.65 23.63 One 4 0 9 25.55 25.63 25.57 25.56 25.57 25.59 25.62 25.61 25.60 25.62 25.62 0 One 3 10 26.36 26.43 26.42 26.46 26.35 26.39 26.36 26.41 26.40 26.40 26.20 One 5 0 11 27.11 27.27 27.30 27.16 27.11 27.16 27.13 27.17 27.15 27.20 26.95 0 7 One 12 27.82 27.94 27.96 27.98 27.83 27.85 27.84 27.86 27.84 27.86 27.82 0 6 2 13 28.96 29.04 29.07 29.07 28.98 28.98 29.03 29.00 29.04 29.06 28.99 One 6 0 14 29.28 29.42 29.46 29.46 29.35 29.35 29.40 29.40 29.40 29.40 29.32 0 4 3 15 30.72 30.88 30.90 30.93 30.73 30.76 30.74 30.77 30.75 30.77 30.73 0 8 One 16 31.27 31.39 31.41 31.42 31.28 31.31 31.30 31.33 31.29 31.33 31.26 One 0 -3 17 31.41 31.51 31.53 31.53 31.42 31.44 31.44 31.45 31.43 31.45 31.39 0 5 3 18 31.83 31.94 31.95 31.96 31.84 31.86 31.85 31.87 31.86 31.87 31.82 One 7 0 19 32.15 32.22 32.23 32.19 32.17 32.19 32.21 32.21 32.19 32.22 32.16 One 2 -3 20 33.03 33.16 33.18 33.18 33.04 33.06 33.03 33.07 33.07 33.06 33.03 One 7 One 21 33.54 33.65 33.64 33.66 33.56 33.56 33.56 33.56 33.57 33.59 33.51 One 6 -2

To evaluate the phosphor characteristics of each of the examples and comparative examples, the photoexcitation luminescence characteristics were measured. The luminescence spectrum obtained when 450 nm of blue light, monochromated by a diffraction grating, was incident using an Xe lamp as the excitation light source was measured. At this time, stimulation by a blue LED excited by blue light is assumed.

Table 6 below shows a list of the luminescence peak wavelength and the half width relative intensity of each example. Also, the phase confirmed by XRD measurement is also listed. The relative intensity is a certain intensity based on the integral intensity of the emission peak of Example 1, and is not an absolute value.

On the Sr ₃ Si ₈ O ₄ N ₁₀ phase, the luminescence spectrum changes according to the composition, the luminescence peak wavelength is 589 to 620 nm, and the half width is 120 to 127 nm. In Comparative Examples 3 and 4, the half width is as large as 132 nm and 135 nm. However, this involves several steps during the obtained phosphor, and the half-width is large due to overlapping of the luminescence at various stages. Half width in Comparative Example _{1 Sr 1 .02 Si 2 O 2} N 2 fluorescent material of 74 nm is, it is a phosphor which enables to have a very large half-value width than that improving the color rendering property.

Luminescence peak wavelength (nm) Half width (nm) Relative luminescence intensity The phase identified by XRD Example 1 602 120 1.00 Sr ₃ Si ₈ O ₄ N ₁₀ Example 2 589 120 0.76 Sr ₃ Si ₈ O ₄ N ₁₀ Example 3 608 125 1.03 Sr ₃ Si ₈ O ₄ N ₁₀ Example 4 620 142 0.92 Sr ₃ Si ₈ O ₄ N ₁₀ Example 5 601 121 0.95 Sr ₃ Si ₈ O ₄ N ₁₀ Example 6 605 121 1.00 Sr ₃ Si ₈ O ₄ N ₁₀ Example 7 608 123 0.97 Sr ₃ Si ₈ O ₄ N ₁₀ Example 8 609 123 1.12 Sr ₃ Si ₈ O ₄ N ₁₀ Example 9 613 124 1.15 Sr ₃ Si ₈ O ₄ N ₁₀ Example 10 618 127 1.08 Sr ₃ Si ₈ O ₄ N ₁₀ Example 11 619 135 0.59 Sr ₃ Si ₈ O ₄ N ₁₀ Comparative Example 1 537 74 1.12 Sr _{1 .02} Si ₂ O ₂ N ₂ Comparative Example 2 545 111 0.75 Sr ₃ Si ₈ O ₄ N ₁₀ + Sr ₂ Si ₂ O ₂ N ₂ Comparative Example 3 648 132 0.20 unknown (plural) Comparative Example 4 554 135 0.46 Sr ₃ Si ₈ O ₄ N ₁₀ + Sr ₂ Si ₂ O ₂ N ₂ + LaSi ₃ N ₅

2 is a diagram showing an emission spectrum by 450 nm excitation light of Example 1 and Comparative Example 1 of the present invention. In order to compare the spectrum shape, standardization is performed with the maximum value of the light emission intensity. As described above, the phosphor of the present invention is characterized in that it exhibits a luminescence spectrum having a very wide half width at a peak around 600 nm. Comparative Example 1 shows a Sr _{1 .02} Si ₂ O ₂ N ₂ phase, which shows luminescence at a peak around 540 nm.

3 is a graph showing the emission spectra of Examples 1 to 4 and Comparative Example 3 of the present invention, showing Example 1 of Ca 0%, Examples 2 to 4 containing Ca, and 450 nm of Comparative Example 3 And shows the emission spectrum by the excitation light. In Examples 1 to 4, it was confirmed that all Sr ₃ Si ₈ O ₄ N ₁₀ crystal phases.

Further, the peak emission wavelength is from 589 nm to 620 nm. It can be seen that the emission wavelength can be controlled according to the composition. In Comparative Example 3, which became another crystal phase, it was found that the light emission intensity was greatly lowered.

Fig. 4 is a diagram showing emission spectra by 450 nm excitation light of Examples 1 and 5 to 10 of the present invention in which the addition amount of Eu is changed. Fig. In all of the examples of FIG. 4, the Sr ₃ Si ₈ O ₄ N ₁₀ phase was confirmed. As the amount of Eu to be added increases, the emission peak shifts to the longer wavelength side, and the emission shows a peak wavelength of 600 to 615 nm.

Fig. 5 is a diagram showing luminescence spectra by 450 nm excitation light of Example 11 and Comparative Example 4 of the present invention in which La is added. Fig. As shown in the above Table 4, the addition of La alone in Comparative Example 4 is not solved in the Sr ₃ Si ₈ O ₄ N ₁₀ phase, and La forms a LaSi ₃ N ₅ phase, showing a largely different luminescence spectrum.

La is a rare earth element and is expected to replace Sr, an alkaline earth metal element of similar character. However, La, which is a trivalent ion, is substituted with Sr, which is a divalent ion, to compensate the charge. It is necessary to add a metal at the same time. By adding Al as in the case of Example 11, light emission can be obtained on Sr ₃ Si ₈ O ₄ N ₁₀ by solving La having a different atom from Sr.

The case where M = Sr, A = Si, R = Eu, a = 2.94, b = 8, c = 4, d = 10, e = 0.06 in the formula MaAbOcNd: Re was described in Example 1. However, it is basically required to be an oxynitride characteristically consisting of a compound represented by the composition formula M3A8O4N10, and the constituent element parameters of M, A, and R above are not particularly limited within the scope of the description.

Although the parameters in Example 1 of the general formula show the structure derived from the crystal structure, it is general that the crystal contains lattice defects such as vacancy alternating lamination defects. By including these defects, the crystal structure can be predicted to have a certain range of parameters in the holding range.

The M element is one or more elements selected from divalent rare earth elements other than Mg, Ca, Sr, Ba, Zn and R elements, and even when the M element is an element other than Sr, the alkaline earth metal element, It can be predicted that the same fluorescent material as that of the first embodiment is formed.

Although Zn is a Group 12 element, it is predictable that the phosphor is the same as that of Embodiment 1, since the electron arrangement is similar to that of the Group 2 alkaline earth metal element.

The element A is one or two or more elements selected from the group consisting of tetravalent metal elements. Even when the element A is a tetravalent element other than Si, the same fluorescent material as that of Embodiment 1 is used in similarity of scientific properties Composition is predictable.

The R element is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb serving as a luminescent center. It is obvious that these elements act as luminescent centers and that even if they are employed in place of Eu, they act as phosphors as in the first embodiment.

In the same manner as in Example 11 except that in the formula MaBfAbCgOcNd: Re, M = Sr, A = Si, B = La, C = Al, R = Eu, a = 2.4, b = 7.7, c = (M + B) ₃ (A + C) ₈ O ₄ N ₁₀ in the case of the oxynitride, which is mainly characterized by a compound represented by the formula (M + B) ₃ And the constituent element parameters of M, A, B, C, and R are not particularly limited within the scope not deviating from the description of the present invention.

Although the parameters of this Embodiment 11 show the structure derived from the crystal structure, it is general that the crystal actually contains lattice defects such as vacancy hole alternating lamination defects. By including such defects, it can be predicted that the parameter has a certain range in the range of maintaining the crystal structure.

The element M is at least one element selected from divalent rare earth elements other than Mg, Ca, Sr, Ba, Zn and R elements, and even if the element M is an element other than Sr, the element of alkaline earth metal, rare earth element, It can be predicted that the phosphor similar to that of Example 11 is constituted.

Although Zn is a Group 12 element, it can be predicted that the phosphor is the same as that of Embodiment 11, since the electron arrangement is similar to that of the Group 2 alkaline earth metal element.

When the element A is one or more elements selected from the group consisting of tetravalent metal elements and the element A is a tetravalent element other than Si, the tetravalent element is a group 14, and the element It can be predicted that the same phosphor as Example 11 is constituted by similarity.

The element B is one or more elements selected from trivalent Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. Even if these elements are all Group 3 elements and the B element is a trivalent element other than La, it can be predicted that the phosphor similar to that of Embodiment 11 is constituted by the chemical similarity of the group element.

The C element is one or more elements selected from Al, Ga, and In, and all of them are a group 13 element. Even if the C element is Ga or In other than Al, the chemical similarity of the group 13 element It can be predicted that the same phosphor as that of Embodiment 11 is constructed.

The R element is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb serving as a luminescent center. It is clear that these elements act as luminescent centers and that even if they are employed in place of Eu, they act as phosphors as in the case of Example 11. [

&Lt; Light emitting device &

6 is a cross-sectional view showing an example of a light emitting device package using the oxynitride fluorescent material of the present invention. 6 shows a surface mount type light emitting device package.

As shown in FIG. 6, the surface mount type light emitting device package 100 according to an embodiment of the present invention includes lead frames 110 of positive and negative electrodes, and the lead frames 110 of the positive and negative electrodes And a light emitting device 120 positioned above any one of the light emitting devices 120 and generating light according to application of a voltage. The light emitting device 120 may use a light emitting diode or a laser diode.

The light emitting device 120 is electrically connected to the lead frame 110 by a wire 130 and the light transmitting resin 140 is molded on the light emitting device 120.

And a phosphor 141 dispersed in the light transmitting resin 140.

The phosphor 141 used herein may be provided by dispersing other phosphors in addition to the above-described oxynitride phosphors. Can be dispersed together with other phosphors such as, for example, YAG and beta -SiAlON. At this time, two or more different dispersed phosphors may be used.

The light emitting device 120 may be a near-ultraviolet or blue light emitting device that generates light having a main peak of an emission spectrum in a wavelength range of 400 to 480 nm when a voltage is applied.

Further, a laser diode, a surface-emission laser diode, an inorganic electroluminescent element, an organic electroluminescent element, or the like may be used as a light emitting element having a main emission peak in the same wavelength region instead of the near ultraviolet light emitting element. In the present invention, as a preferred application example, a nitride semiconductor light emitting diode is used.

As the light transmitting resin 140 used as a molding member, a light transmitting epoxy resin, a silicone resin, a polyimide resin, a urea resin, an acrylic resin, or the like can be used. Preferably, a light-transmitting epoxy resin or a light-transmitting silicone resin can be used.

The optically transparent resin 140 may be entirely molded around the light emitting device 120, but may be partially molded at a light emitting portion as necessary. That is, in the case of a small-capacity light-emitting device, it is preferable to mold the entire light-emitting device. In the case of a high-power light-emitting device, As shown in FIG. In this case, it is preferable to partially mold the light emitting portion.

7 is a cross-sectional view showing another example of the light emitting device package using the oxynitride fluorescent material of the present invention. 7 shows an example of a lamp-type light emitting device package 200 according to another embodiment of the present invention.

The lamp-type light emitting device package 200 includes a pair of lead frames 210 and a light emitting device 220 that generates light according to application of a voltage.

The light emitting device 220 is electrically connected to the lead frame 210 by the wire 230 and the light transmitting resin 240 is molded on the light emitting device 220.

The fluorescent material 241 may be dispersed in the light transmitting resin 240 and the covering material 250 may be provided on the light transmitting resin 240 to finish the outer space of the entire device.

The phosphor 241 used herein may be dispersed in addition to the above-described oxynitride phosphors, for example, a phosphor such as YAG or β-SiAlON. Two or more kinds of the dispersed phosphors 241 may be provided.

The light transmissive resin 240 of the present embodiment may be entirely molded around the light emitting element 220, but may be partially molded at a light emitting portion as necessary. The reason for this is as mentioned above.

The surface mount type light emitting device package 100 or the lamp type light emitting device package 200 according to the present invention described above can be embodied as a white light emitting package. The process of implementing such white light will be described below.

Blue light having a wavelength range of 400 to 480 nm corresponding to the near ultraviolet ray emitted from the light emitting devices 120 and 220 passes through the phosphors 141 and 241. Here, some light drives the phosphors 141 and 241 to generate light having a main peak in the wavelength range of 500 to 600 nm and transmit the remaining light as blue light.

As a result, white light having a spectrum of a wide wavelength of 400 to 700 nm is emitted.

The phosphors 141 and 241 may be formed by dispersing other phosphors in addition to the oxynitride phosphors described above.

For example, these phosphors 141 and 241 can be used together with the oxynitride phosphors described above (hereinafter referred to as first phosphors) and the second phosphors having different emission peaks.

The light emitting device package 100, 200 may have an emission spectrum having at least one emission peak in at least one of the wavelength bands of 430 to 500 nm and 500 to 730 nm.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

100, 200: light emitting device package 110, 210: lead frame
120, 220: light emitting device 130, 230: wire
140, 240: light transmitting resin 141, 241: phosphor

Claims (16)

In the oxynitride phosphors,
X-ray diffraction diffraction angles 2? Of from 10.7 to 11.7, from 14.2 to 15.2, from 16.3 to 17.3, from 21.6 to 22.6, from 23.2 to 24.2, from 27.4 to 28.4, from 30.3 to 30.8, from 30.8 to 31.8, 32.0 °, 31.4 to 32.4 °, 31.7 to 32.7 °, 32.6 to 33.6 °, 33.1 to 34.1 °, 33.3 to 34.3 °, 33.7 to 34.7 °, 36.8 to 37.8 °, 37.0 to 38.0 °, 37.7 to 38.7 °, 38.4 To 39.4 [deg.] And 38.8 to 39.8 [deg.]. The composition according to claim 1, wherein the oxynitride phosphor is a composition comprising at least an M element, an A element, an N element, an O element, and an R element and is represented by a general formula MaAbOcNd: Re,
Wherein M is at least one element selected from divalent rare earth elements other than Mg, Ca, Sr, Ba, Zn and R, and A is at least one element selected from the group consisting of tetravalent metal elements Wherein R is at least one element selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, Lt;
(A + e)? 3.5, 7.5? B? 8.5, 3? C? 5, 9? D? 11, 13? d)? 15, and 0.0001? e? 0.2. The oxynitride phosphor according to claim 1, wherein each parameter of the formula satisfies at least one of (a + e) = 3, b = 8, c = 4, and d = 10. The oxynitride phosphor according to claim 1, wherein the M element is Sr. The oxynitride phosphor according to claim 1, wherein the M element is a mixed state of Sr and Ca, and satisfies Ca / (Sr + Ca) < 0.40, calculated as the number of contained atoms. The oxynitride phosphor according to claim 1, wherein the element A is Si. The oxynitride phosphor according to claim 1, wherein the R element is Eu. The oxynitride phosphor according to claim 1, wherein the oxynitride phosphor is a composition containing at least M element, A element, B element, C element, N element, O element and R element and expressed by the general formula MaBfAbCgOcNd: Re,
Wherein M is at least one element selected from divalent rare earth elements other than Mg, Ca, Sr, Ba, Zn and R, and A is at least one element selected from the group consisting of tetravalent metal elements And B is at least one element selected from trivalent Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, N is nitrogen, and R is at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb,
(A + e + f)? 3.5, 7.5? (B + g)? 8.5, 3? C? 5 wherein the elements M, A, B, C, N, , 9? D? 11, 13? C + d? 15, 0.0001? E? 0.2, and f = g. The method according to claim 8, wherein each parameter of the general formula satisfies at least one of the conditions (a + e + f) = 3, (b + g) = 8, c = 4, To form an oxynitride phosphor. The oxynitride phosphor according to claim 8, wherein the M element is Sr. 9. The oxynitride phosphor according to claim 8, wherein the element A is Si. The oxynitride phosphor according to claim 8, wherein the element B is La. The oxynitride phosphor according to claim 8, wherein the C element is Al. The oxynitride phosphor according to claim 8, wherein the R element is Eu. The oxynitride phosphor according to claim 1, wherein the peak point of the luminescence spectrum excited by blue light is 560 nm or more and 640 nm or less. The oxynitride phosphor according to claim 1, wherein the half width of the luminescence spectrum excited by blue light is 110 nm or more and 130 nm or less.

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