KR20130134993A - Apparatus and method fdr drying substrates - Google Patents

Abstract

The present invention relates to a semiconductor substrate manufacturing device and a method thereof. In detail, it relates to a substrate drying device and a method thereof. The substrate drying device includes a housing providing a space in which a drying process is performed, a substrate support member supporting a substrate by being provided to the housing, a fluid supply member including a supply line supplying a process fluid in a supercritical state to the housing, and an exhausting member including an exhausting line exhausting the fluid from the housing. The supply line includes a first supply line supplying the process fluid at a first supply amount to the housing and a second supply line supplying the processing fluid at a second supply amount to the housing. The supply line includes a front supply line connected to a storage part of the fluid and a rear supply line connected to the housing. The first and second supply lines are connected to each other in parallel. The front supply line and the rear supply line are connected to each other.

Description

Substrate drying apparatus and substrate drying method {APPARATUS AND METHOD FDR DRYING SUBSTRATES}

The present invention relates to an apparatus and method for manufacturing a semiconductor substrate, and more particularly, to an apparatus and method for drying a substrate.

Generally, a semiconductor device is formed through various processes such as a photo process, an etching process, an ion implantation process, and a deposition process for a substrate such as a silicon wafer .

In addition, various foreign substances, such as particles, organic contaminants, and metal impurities, are generated in the process of performing each process. Since these foreign matters cause defects on the substrate and directly affect the performance and yield of the semiconductor device, a cleaning process for removing such foreign matters is essential in the manufacturing process of the semiconductor device.

The cleaning process includes a chemical treatment process for removing contaminants on a substrate by a chemical, a wet cleaning process for removing a chemical solution remaining on the substrate by pure water, And a drying process for drying the pure water remaining on the surface.

In the past, a drying process was performed by supplying heated nitrogen gas onto a substrate where pure water remained. However, as the line width of the pattern formed on the substrate is narrowed and the aspect ratio is increased, the removal of pure water between the patterns is not performed well. To this end, recently, pure water is substituted on a substrate with a liquid organic solvent such as isopropyl alcohol, which is more volatile and has a lower surface tension than pure water, and then heated nitrogen gas is supplied to dry the substrate.

However, since the nonpolar organic solvent and the polar pure water are not mixed well, in order to replace the pure water with the liquid organic solvent, a large amount of the organic solvent must be supplied for a long time.

The conventional drying process has been made by replacing the pure water on the substrate with an organic solvent such as isopropyl alcohol having a relatively low surface tension and then evaporating it.

However, such a drying method still causes a pattern collapse for semiconductor devices having a fine circuit pattern having a line width of 30 nm or less, even when using an organic solvent, and thus, a supercritical drying process (supercritical) that can overcome this problem in recent years. The drying process is replacing the existing drying process.

The present invention is to provide a substrate drying apparatus and method for preventing the breakage of the substrate by reducing the generation of particles generated when the supercritical fluid is supplied to the process chamber.

It is an object of the present invention to provide a substrate drying apparatus and method for shortening process time and improving process efficiency by supplying and evacuating supercritical fluid at high speed.

The problem to be solved by the present invention is not limited to the above-described problem, and the objects not mentioned may be clearly understood by those skilled in the art from the present specification and the accompanying drawings. will be.

The present invention provides a substrate drying apparatus.

In one embodiment, a substrate drying apparatus includes a housing providing a space in which a drying process is performed, a substrate supporting member provided inside the housing to support a substrate, and supplying a process fluid in a supercritical state to the housing. A fluid supply member including a supply line and an exhaust member including an exhaust line for exhausting the process fluid from the housing, wherein the supply line is provided to supply the process fluid to the housing at a first supply flow rate; A first supply line and a second supply line provided to supply the process fluid to the housing at a second supply flow rate.

The supply line further includes a front supply line connected to the reservoir of the process fluid and a rear supply line connected to the housing, wherein the first supply line and the second supply line are connected in parallel to each other, The rear supply line can be connected.

The first supply line includes a first flow valve that regulates the process fluid to move to the first supply flow rate, and the second supply line controls a second flow of the process fluid to move to the second supply flow rate. And a flow rate valve, wherein the first flow rate valve and the second flow rate valve may be adjusted such that the second supply flow rate is greater than the first supply flow rate.

The supply line further includes a third supply line provided with a third flow valve for controlling the process fluid to move to a third supply flow rate, the third flow rate such that the third supply flow rate is greater than the second supply flow rate. The valve can be adjusted.

The supply line further includes a controller for adjusting the flow rate of the process fluid, wherein the controller controls the opening degree of the second flow valve during the drying process so that the flow rate of the process fluid passing through the supply line is controlled. Can be provided.

According to another embodiment of the present invention, a substrate drying apparatus includes a housing providing a space in which a drying process is performed, a substrate supporting member provided inside the housing to support a substrate, and supplying a process fluid in a supercritical state to the housing. A fluid supply member including a supply line and an exhaust member including an exhaust line for exhausting the process fluid from the housing, the exhaust line being provided such that the process fluid is exhausted from the housing at a first exhaust flow rate A first exhaust line and a second exhaust line provided to exhaust the process fluid from the housing at a second exhaust flow rate.

The exhaust line further includes a front exhaust line connected to the housing and a rear exhaust line connected to the regeneration device of the process fluid, wherein the first exhaust line and the second exhaust line are connected in parallel with each other, and the front exhaust line and The rear exhaust line can be connected.

The first exhaust line includes a first flow valve that regulates the process fluid to be exhausted at the first exhaust flow rate, and the second exhaust line is configured to control the process fluid to be exhausted to the second exhaust flow rate. Including a flow rate valve, the first flow rate valve and the second flow rate valve may be adjusted such that the second exhaust flow rate is greater than the first exhaust flow rate.

The exhaust line further comprises a third exhaust line provided with a third flow valve for regulating the process fluid to be exhausted to a third exhaust flow rate, wherein the third flow rate is greater than the second exhaust flow rate. The valve can be adjusted.

The present invention provides a substrate drying method.

In the substrate drying method according to an embodiment of the present invention, the substrate is dried by controlling the pressure inside the housing by controlling the flow rate of supplying the process fluid in a supercritical state to the inside of the housing. Supplying the process fluid into the housing at a supply flow rate, and later, supplying the process fluid into the housing using the flow rate of the process fluid as a second supply flow rate, wherein the process fluid is supplied into the housing. A feed flow rate is provided less than the second feed flow rate.

The supplying of the second supply flow rate may include supplying the process fluid to the housing at the first supply flow rate and reaching the set pressure to supply the process fluid at the second supply flow rate.

The supplying at the first supply flow rate may include supplying the process fluid into the housing through a lower surface of the housing, and the supplying at the second supply flow rate may include supplying the process fluid inside the housing through an upper surface of the housing. Can be supplied.

The supplying at the first supply flow rate may include supplying the process fluid into the housing through the lower surface of the housing, and supplying the second supply flow rate at the same time through the upper and lower surfaces of the housing. It may be supplied into the housing.

The process fluid may be supplied to the housing through a different supply line for supplying at the first supply flow rate and supplying at the second supply flow rate.

The flow rate of the process fluid can be adjusted by controlling the valve provided on the supply line.

The valve may be adjusted while the process fluid is being supplied, thereby controlling the flow rate of the process fluid and controlling the pressure inside the housing.

The process fluid is supplied into the housing by setting the flow rate of the process fluid to a third supply flow rate, wherein the process fluid is supplied to the housing at the first supply flow rate and reaches the set pressure. The process fluid may be supplied at a third supply flow rate, and when the other set pressure is reached, the process fluid may be supplied at the second supply flow rate.

The substrate drying method according to another embodiment of the present invention controls the pressure inside the housing by controlling the flow rate of exhausting the process fluid in a supercritical state to the outside of the housing, thereby drying the substrate. And exhausting the process fluid to the outside of the housing at an exhaust flow rate, and later, exhausting the process fluid to the outside of the housing using the flow rate of the process fluid as a second exhaust flow rate. One exhaust flow rate may be provided less than the second exhaust flow rate.

In the exhausting of the second exhaust flow rate, when the process fluid is discharged from the housing at the first exhaust flow rate and the set pressure is reached, the process fluid may be exhausted at the second exhaust flow rate.

The process fluid may be exhausted from the housing through an exhaust line that is different from the exhaust of the first exhaust flow rate and the exhaust of the second exhaust flow rate.

The flow rate of the process fluid can be adjusted by controlling the valve provided on the supply line.

The process fluid is exhausted from the inside of the housing by setting the flow rate of the process fluid as a third exhaust flow rate, and when the process fluid is exhausted from the housing at the first exhaust flow rate to reach the set pressure The process fluid may be exhausted at a third exhaust flow rate, and when the other set pressure is reached, the process fluid may be exhausted at the second exhaust flow rate.

According to an embodiment of the present invention, when the supercritical fluid is supplied to the process chamber, particles may be prevented from occurring to prevent breakage of the substrate.

According to one embodiment of the present invention, by supplying and exhausting the supercritical fluid rapidly, the process time can be shortened to improve process efficiency.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a graph relating to the phase change of carbon dioxide.
2 is a plan view of one embodiment of a substrate processing apparatus.
3 is a cross-sectional view of the first process chamber of FIG. 2.
4 is a cross-sectional view of one embodiment of the second process chamber of FIG. 2.
FIG. 5 is a diagram of one embodiment of a substrate drying apparatus having a supply and exhaust line of process fluid connected to the second process chamber of FIG. 2.
FIG. 6 is a view of a modification of the substrate drying apparatus in which the supply and exhaust lines of the process fluid are connected to the second process chamber of FIG. 2.
FIG. 7 is a diagram of another embodiment of a substrate drying apparatus in which supply and exhaust lines of process fluid are connected to the second process chamber of FIG. 2.
8 is a flow chart of one embodiment of a substrate processing method.
9 is a flowchart of one embodiment of a substrate drying method.
10 to 14 is an operation of the substrate drying method of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

Hereinafter, the substrate processing apparatus (100 of FIG. 2) which concerns on this invention is demonstrated.

The substrate processing apparatus 100 may perform a supercritical process for treating the substrate S by using the supercritical fluid as the process fluid.

Here, the substrate S is a comprehensive concept including a semiconductor device, a flat panel display (FPD), and other substrates used for manufacturing an article having a circuit pattern formed on a thin film. Examples of such a substrate S include various wafers, including silicon wafers, glass substrates, organic substrates, and the like.

Supercritical fluid refers to a phase having both the properties of a gas and a liquid that are formed when a critical temperature and a supercritical state exceeding a critical pressure are reached. Supercritical fluids have molecular densities close to liquids and viscosities close to gases, which are very effective in chemical reactions due to their excellent diffusivity, penetration, and solubility, and do not apply interfacial tension to microstructures because they have little surface tension. Has characteristics.

Supercritical processes are carried out using the properties of these supercritical fluids. Representative examples include supercritical drying processes and supercritical etching processes. Hereinafter, the supercritical process will be described based on the supercritical drying process. However, since this is only for ease of description, the substrate processing apparatus 100 may perform a supercritical process other than the supercritical drying process.

The supercritical drying process may be performed by dissolving the organic solvent remaining in the circuit pattern of the substrate S as a supercritical fluid to dry the substrate S, which is excellent in drying efficiency and prevents collapse. There are advantages to it. As the supercritical fluid used in the supercritical drying process, a material miscible with an organic solvent can be used. For example, supercritical carbon dioxide (scCO2) may be used as the supercritical fluid.

1 is a graph relating to the phase change of carbon dioxide.

Carbon dioxide has a critical temperature of 31.1 ℃, the critical pressure of 7.38Mpa is relatively low, making it easy to supercritical state, easy to control the phase change by adjusting the temperature and pressure, and low cost. In addition, carbon dioxide is non-toxic and harmless to humans, has non-flammable and inert properties, and supercritical carbon dioxide has a diffusion coefficient of 10 to 100 times higher than water or other organic solvents, resulting in rapid penetration. The substitution of the solvent is quick, and there is little surface tension, which has advantageous properties for use in drying the substrate S having a fine circuit pattern. In addition, carbon dioxide can be recycled as a by-product of various chemical reactions, at the same time can be used in the supercritical drying process, and then converted into a gas to separate and reuse the organic solvent is less burden in terms of environmental pollution.

Hereinafter, an embodiment of the substrate processing apparatus 100 according to the present invention will be described. The substrate processing apparatus 100 according to an embodiment of the present invention may perform a cleaning process including a supercritical drying process.

2 is a plan view of one embodiment of a substrate processing apparatus.

Referring to FIG. 2, the substrate processing apparatus 100 includes an index module 1000 and a process module 2000.

The index module 1000 may receive the substrate S from the outside and return the substrate S to the process module 2000, and the process module 2000 may perform a supercritical drying process.

The index module 1000 is an equipment front end module (EFEM) and includes a load port 1100 and a transfer frame 1200.

In the load port 1100, a container C in which the substrate S is accommodated is placed. As the container C, a front opening unified pod (FOUP) may be used. The container C may be carried in or out of the load port 1100 from the outside by an overhead transfer (OHT).

The transfer frame 1200 conveys the substrate S between the container C placed on the load port 1100 and the process module 2000. The transfer frame 1200 includes an index robot 1210 and an index rail 1220. The index robot 1210 may move on the index rail 1220 and carry the substrate S. FIG.

The process module 2000 is a module that actually performs a process and includes a buffer chamber 2100, a transfer chamber 2200, a first process chamber 3000, and a second process chamber 4000.

The buffer chamber 2100 provides a space in which the substrate S, which is transferred between the index module 1000 and the process module 2000, temporarily stays. The buffer chamber 2100 may be provided with a buffer slot on which the substrate S is placed.

The transfer chamber 2200 transfers the substrate S between the buffer chamber 2100, the first process chamber 3000, and the second process chamber 4000 disposed around the transfer chamber 2200. The transfer chamber 2200 may include a transfer robot 2210 and a transfer rail 2220. The transfer robot 2210 may transfer the substrate S while moving on the transfer rail 2220.

The first process chamber 3000 and the second process chamber 4000 may perform a cleaning process. In this case, the cleaning process may be sequentially performed in the first process chamber 3000 and the second process chamber 4000. For example, a chemical process, a rinse process, and an organic solvent process may be performed during the cleaning process in the first process chamber 3000, followed by a supercritical drying process in the second process chamber 4000.

The first process chamber 3000 and the second process chamber 4000 are disposed on the side of the transfer chamber 2200. For example, the first process chamber 3000 and the second process chamber 4000 may be disposed to face each other on the other side of the transfer chamber 2200.

In addition, a plurality of first process chambers 3000 and second process chambers 4000 may be provided in the process module 2000. The plurality of process chambers 3000 and 4000 may be arranged in a line on the side of the transfer chamber 2200, stacked up and down, or a combination thereof.

Of course, the arrangement of the first process chamber 3000 and the second process chamber 4000 is not limited to the above-described example, and may be appropriately changed in consideration of various factors such as the footprint and process efficiency of the substrate processing apparatus 100. have.

Hereinafter, the first process chamber 3000 will be described.

3 is a cross-sectional view of the first process chamber of FIG. 2.

The first process chamber 3000 may perform a chemical process, a rinse process, and an organic solvent process. Of course, the first process chamber 3000 may selectively perform only some of these processes. Here, the chemical process is a process of removing foreign substances on the substrate S by providing a cleaner on the substrate S, and the rinsing process is a process of washing the detergent remaining on the substrate S by providing a rinse agent on the substrate. The organic solvent step is a step of providing an organic solvent to the substrate S to replace the rinse agent remaining between the circuit patterns of the substrate S with an organic solvent having a low surface tension.

Referring to FIG. 3, the first process chamber 3000 includes a support member 3100, a nozzle member 3200, and a recovery member 3300.

The support member 3100 may support the substrate S and rotate the supported substrate S. FIG. The support member 3100 may include a support plate 3110, a support pin 3111, a chucking pin 3112, a rotation shaft 3120, and a rotation driver 3130.

The support plate 3110 has an upper surface of the same or similar shape as the substrate S, and a support pin 3111 and a chucking pin 3112 are formed on the upper surface of the support plate 3110. The support pins 3111 may support the substrate S, and the chucking pins 3112 may fix the supported substrate S.

The rotating shaft 3120 is connected to the lower portion of the support plate 3110. The rotary shaft 3120 receives the rotational force from the rotary driver 3130 to rotate the support plate 3110. Accordingly, the substrate S mounted on the support plate 3110 may rotate. In this case, the chucking pins 3112 may prevent the substrate S from leaving its position.

The nozzle member 3200 injects a chemical onto the substrate S. The nozzle member 3200 includes a nozzle 3210, a nozzle bar 3220, a nozzle shaft 3230, and a nozzle shaft driver 3240.

The nozzle 3210 injects a medicament onto the substrate S mounted on the support plate 3110. The agent may be a detergent, a rinse agent or an organic solvent. Here, the cleaning agent may be a solution in which ammonia (NH 4 OH), hydrochloric acid (HCl) or sulfuric acid (H 2 SO 4) is mixed with hydrogen peroxide (H 2 O 2) solution or hydrogen peroxide solution, or a hydrofluoric acid (HF) solution. In addition, pure water may be used as a rinse agent. As the organic solvent, isopropyl alcohol, ethyl glycol, 1-propanol, tetra hydraulic franc, 4-hydroxyl, 4-methyl, 2-pentanone, 1-butanol, 2-butanol, methanol, ethanol, n-propyl alcohol or dimethylether Gas can be used.

The nozzle 3210 is formed at one bottom of the nozzle bar 3220. The nozzle bar 3220 is coupled to the nozzle shaft 3230, and the nozzle shaft 3230 is provided to be able to lift or rotate. The nozzle shaft driver 3240 may adjust the position of the nozzle 3210 by lifting or rotating the nozzle shaft 3230.

The recovery member 3300 recovers the medicine supplied to the substrate S. When the medicine is supplied to the substrate S by the nozzle member 3200, the support member 3100 may rotate the substrate S to uniformly supply the medicine to all regions of the substrate S. When the substrate S rotates, the medicament scatters from the substrate S, and the medicament scattering may be recovered by the recovery member 3300.

The recovery member 3300 may include a recovery container 3310, a recovery line 3320, a lifting bar 3330, and a lifting driver 3340.

The recovery container 3310 is provided in an annular ring shape surrounding the support plate 3110. The recovery container 3310 may be plural, and the plurality of recovery container 3310 may be provided in a ring shape, which is sequentially away from the support plate 3110 when viewed from the top, and is located at a distance from the support plate 3110. 3310) is provided so that the height is higher. As a result, a recovery port 3311 through which the chemicals scattered from the substrate S flows into the space between the recovery containers 3310 is formed.

A recovery line 3320 is formed on the bottom surface of the recovery container 3310. The recovery line 3320 is supplied to a drug regeneration system (not shown) for regenerating the drug recovered in the recovery container 3310.

The lifting bar 3330 is connected to the recovery container 3310 to receive power from the lifting driver 3340 to move the recovery container 3310 up and down. The lifting bar 3330 may be connected to the recovery container 3310 disposed at the outermost part when the recovery container 3310 is plural. The lift driver 3340 may adjust the recovery port 3311 through which the chemicals scattered among the plurality of recovery ports 3311 are lifted by elevating the recovery container 3310 through the lifting bar 3330.

4 is a cross-sectional view of one embodiment of the second process chamber of FIG. 2.

Referring to FIG. 4, the second process chamber 4000 includes a housing 4100, an elevating member 4200, a supporting member 4300, a heating member 4400, a supply port 4500, a blocking member 4600, and an exhaust gas. Port 4700 may be included.

The second process chamber 4000 may perform a supercritical drying process using a supercritical fluid. Of course, as described above, the process performed in the second process chamber 4000 may be another supercritical process in addition to the supercritical drying process, and furthermore, the second process chamber 4000 may use another process fluid instead of the supercritical fluid. May be used to carry out the process.

The housing 4100 provides a space in which the supercritical drying process is performed. The housing 4100 is provided of a material that can withstand high pressures above the critical pressure.

The housing 4100 may include a top housing 4110 and a bottom housing 4120 disposed below the top housing 4110, and may be provided in a top and bottom structure.

The upper housing 4110 is fixedly installed and the lower housing 4120 may be elevated. When the lower housing 4120 descends and is spaced apart from the upper housing 4110, the inner space of the second process chamber 4000 is opened, and the substrate S is carried into the inner space of the second process chamber 4000 or the inner space. Can be exported from. Here, the substrate S loaded into the second process chamber 4000 may be in a state in which the organic solvent remains after the organic solvent process in the first process chamber 3000. In addition, when the lower housing 4120 is raised to be in close contact with the upper housing 4110, the inner space of the second process chamber 4000 may be sealed, and a supercritical drying process may be performed therein.

The lifting member 4200 lifts the lower housing 4120. The lifting member 4200 may include a lifting cylinder 4210 and a lifting rod 4220. The lifting cylinder 4210 is coupled to the lower housing 4120 to generate a driving force in the up and down direction, that is, lifting force. One end of the elevating rod 4220 is inserted into the elevating cylinder 4210 and extended vertically, and the other end thereof is coupled to the upper housing 4110. According to this structure, when a driving force is generated in the elevating cylinder 4210, the elevating cylinder 4210 and the elevating rod 4220 may be relatively elevated to lower the lower housing 4120 coupled to the elevating cylinder 4210.

The support member 4300 supports the substrate S between the upper housing 4110 and the lower housing 4120. The support member 4300 may be provided on a lower surface of the upper housing 4110 and extend vertically downward, and be bent in a horizontal direction at a lower end thereof.

A horizontal adjustment member 4111 may be installed in the upper housing 4110 where the support member 4300 is installed. The horizontal adjustment member 4111 adjusts the horizontality of the upper housing 4110. When the level of the upper housing 4110 is adjusted, the level of the substrate S seated on the support member 4300 installed in the upper housing 4111 may be adjusted accordingly. In the supercritical drying process, when the substrate S is inclined, the organic solvent remaining on the substrate S flows through the inclined surface, and a specific portion of the substrate S is not dried or is overdried to damage the substrate S. Can be. The horizontal adjusting member 4111 can prevent the problem by leveling the substrate S. FIG.

The heating member 4400 heats the interior of the second process chamber 4000. The heating member 4400 may heat the supercritical fluid supplied into the second process chamber 4000 above a critical temperature to maintain the supercritical fluid or to become a supercritical fluid when the liquid is liquefied. The heating member 4400 may be embedded in a wall of at least one of the upper housing 4110 and the lower housing 4120. The heating member 4400 may be provided as, for example, a heater that generates heat by receiving power from the outside.

The supply port 4500 supplies the supercritical fluid to the second process chamber 4000. The supply port 4500 may include an upper supply port 4510 and a lower supply port 4520. The upper supply port 4510 is formed in the upper housing 4110 and supplies a supercritical fluid to the upper surface of the substrate S supported by the support member 4300. The lower supply port 4520 is formed in the lower housing 4120 and supplies a supercritical fluid to the lower surface of the substrate S supported by the support member 4300.

In the upper supply port 4510 and the lower supply port 4520, the lower supply port 4520 may supply the supercritical fluid first, and the upper supply port 4510 may supply the supercritical fluid later. Since the supercritical drying process may proceed in a state where the inside of the second process chamber 4000 is less than the critical pressure in the initial stage, the supercritical fluid supplied into the second process chamber 4000 may be liquefied. Therefore, when the supercritical fluid is supplied to the upper supply port 4510 at the beginning of the supercritical drying process, the supercritical fluid may be liquefied and fall to the substrate S by gravity to damage the substrate S. FIG. The upper supply port 4510 is supplied with the supercritical fluid to the second process chamber 4000 through the lower supply port 4520 so that the supercritical fluid is supplied when the internal pressure of the second process chamber 4000 reaches the critical pressure. Starting from, it is possible to prevent the supercritical fluid to be supplied to liquefy and fall to the substrate (S).

The blocking member 4600 prevents the supercritical fluid supplied through the supply port 4500 from being directly injected onto the substrate S. The blocking member 4600 may include a blocking plate 4610 and a support 4620.

When the supercritical fluid is supplied through the lower supply port 4520 at the beginning of the supercritical drying process, since the internal air pressure of the housing 4500 is low, the supercritical fluid supplied may be injected at a high speed. When the supercritical fluid sprayed at such a high speed reaches the substrate S directly, the supercritical fluid may be directly sprayed in the substrate S due to the physical pressure of the supercritical fluid, thereby causing a lining phenomenon. have. In addition, the substrate S may be shaken due to the injection force of the supercritical fluid, and the organic solvent remaining on the substrate S may flow to damage the circuit pattern of the substrate S.

Accordingly, the blocking plate 4610 disposed between the lower supply port 4520 and the support member 4300 blocks the supercritical fluid from being directly injected onto the substrate S, thereby preventing the substrate from being applied by the physical force of the supercritical fluid. Damage to S) can be prevented.

Optionally, the blocking member 4600 may not be included in the second process chamber 4000.

The exhaust port 4700 exhausts the supercritical fluid from the second process chamber 4000.

The exhaust port 4700 may be formed in the lower housing 4120. In the later stage of the supercritical drying process, the supercritical fluid may be exhausted from the second process chamber 4000, and the internal pressure may be forced down to a critical pressure or less to liquefy the supercritical fluid. The liquefied supercritical fluid may be discharged through the exhaust port 4700 formed in the lower housing 4120 by gravity.

Hereinafter, a substrate drying apparatus in which a supercritical fluid is supplied and exhausted according to an embodiment of the present invention will be described. FIG. 5 is a diagram of one embodiment of a substrate drying apparatus connected to a supply and exhaust line of a process fluid to the second process chamber of FIG. 2.

Referring to FIG. 5, the supercritical fluid is supplied into the housing 4100 of the second process chamber 4000 through the supply line 4800, and the housing of the second process chamber 4000 through the exhaust line 4900. 4100 is exhausted to the outside.

The supply line 4800 includes a front supply line 4880 and a rear supply line 4890, 4891, 4892, a first supply line 4810, and a second supply line 4820.

One end of the front feed line 4880 is connected to the storage tank 4850, and one end of the first and second rear feed lines 4891 and 4892 is connected to the second process chamber 4000. The first supply line 4810 and the second supply line 4820 are connected in parallel with each other, and connect the front supply line 4880 and the rear supply line 4890.

The front supply line 4880 connects the storage tank 4850 and the first supply line 4810 and the second supply line 4820. One end of the front supply line 4880 is connected to the storage tank 4850, and the other end of the front supply line 4880 is connected to the branch points of the first supply line 4810 and the second supply line 4820 that are connected in parallel. . The supercritical fluid is moved from the storage tank 4850 via the front supply line 4880 to a branch point of the first supply line 4810 and the second supply line 4820.

The first supply line 4810 and the second supply line 4820 are connected in parallel with each other. A front feed line 4880 is connected to one branch and a rear feed line 4890 is connected to a branch at the other end.

The first supply line 4810 includes a first open / close valve 4810a and a first flow valve 4810b. The first open / close valve 4810a controls whether the supercritical fluid moved in the front supply line 4880 is moved to the first supply line 4810. The first flow valve 4810b regulates the flow rate of the supercritical fluid that is moved to the first supply line 4810. The first flow valve 4810b controls the pressure of the supercritical fluid flowing into the second process chamber 4000 by moving the supercritical fluid at a predetermined flow rate.

The second supply line 4820 includes a second open / close valve 4820a and a second flow valve 4820b. The second open / close valve 4820a controls whether the supercritical fluid moved in the front supply line 4880 is moved to the second supply line 4820. The second flow valve 4820b regulates the flow rate of the supercritical fluid that is moved to the second supply line 4820. The second flow valve 4820b adjusts the pressure of the supercritical fluid introduced into the second process chamber 4000 by moving the supercritical fluid at a predetermined flow rate. The second flow rate valve 4820b and the first flow rate valve 4810b are provided so that the flow rates of the supercritical fluid moving through the first supply line 4810 and the second supply line 4820 are different. In one example, the second supply flow rate is provided to be greater than the first supply flow rate.

The supercritical fluid flowing into the second process chamber 4000 at the beginning of the supercritical fluid supply process is provided through the first supply line 4810. Since the flow rate of the supercritical fluid that is moved to the first supply line 4810 is less than that of the second supply line 4820, the initial pressure of the supercritical fluid is lowered in the second process chamber 4000. As a result, particles may be prevented from occurring in the second process chamber 4000. In addition, damage to the substrate S due to the initial pressurization of the supercritical fluid can be prevented. When the supercritical fluid is supplied through the first supply line 4810 to reach a predetermined pressure inside the second process chamber 4000, the supercritical fluid is supplied in a large amount through the second supply line 4820. For this reason, process time can be shortened and process efficiency can be aimed at.

The rear feed lines 4890, 4891, 4892 supply supercritical fluid into the second process chamber 4000 that is moved at different flow rates through the first feed line 4810 and the second feed line 4820. The back feed line 4890 includes a first back feed line 4891 connected to the top of the second process chamber 4000 and a second back feed line 4892 connected to the bottom of the second process chamber 4000. According to an example, when the substrate S is positioned above the inside of the second process chamber 4000, the supercritical fluid moved in the first supply line 4810 may be transferred to the second through the second rear supply line 4892. It is provided to the bottom of the process chamber 4000. This is to prevent the breakage of the substrate S due to the initial pressurization by supplying the supercritical fluid to the lower supply port 4520 far from the substrate S at the initial supply of the supercritical fluid. Accordingly, when the supercritical fluid is supplied through the second rear supply line 4892 to reach a predetermined pressure, the supercritical fluid may be supplied in a large amount through the first rear supply line 4891.

The exhaust line 4900 includes a front exhaust line 4980 and a rear exhaust line 4900, a first exhaust line 4910, a second exhaust line 4920, and a third exhaust line 4930.

The front exhaust line 4980 connects the second process chamber 4000, the first exhaust line 4910, the second exhaust line 4920, and the third exhaust line 4930. One end of the front exhaust line 4980 is connected to the second process chamber 4000, and the other end of the front exhaust line 4980 is connected to the first exhaust line 4910, the second exhaust line 4920, and the third in parallel. It is connected to the branch point of the exhaust line 4930. The supercritical fluid is moved from the second process chamber 4000 to a branch point of the first exhaust line 4910, the second exhaust line 4920, and the third exhaust line 4930 through the front exhaust line 4980.

The first exhaust line 4910, the second exhaust line 4920, and the third exhaust line 4930 are provided in parallel with each other.

One end of the first exhaust line 4910 is connected to a branch point of the first exhaust line 4910, the second exhaust line 4920, and the third exhaust line 4930, and the other end is connected to the outside (not shown). The supercritical fluid is moved to the first exhaust line 4910 and exhausted to the outside.

The first exhaust line 4910 includes a first open / close valve 4910a, a first flow valve 4910b, and a first check valve 4910c. The first open / close valve 4910a controls whether the supercritical fluid moved in the front exhaust line 4980 is moved to the first exhaust line 4910. The first flow valve 4910b regulates the flow rate of the supercritical fluid that is moved to the first exhaust line 4910. The first flow valve 4910b adjusts the pressure of the supercritical fluid exhausted from the second process chamber 4000 by moving the supercritical fluid at the preset first exhaust flow rate. The first check valve 4910c causes the supercritical fluid to move only in the direction in which the second process chamber 4000 is discharged to the atmosphere.

The second exhaust line 4920 has one end connected to a branch point of the first exhaust line 4910, the second exhaust line 4920, and the third exhaust line 4930, and the other end is connected to the rear exhaust line 4900. . The second exhaust line 4920 is connected in parallel with the third exhaust line 4930.

The second exhaust line 4920 includes a second open / close valve 4920a, a second flow valve 4920b, and a second check valve 4920c. The second open / close valve 4920a controls whether the supercritical fluid moved in the front exhaust line 4980 is moved to the second exhaust line 4920. The second flow valve 4920b regulates the flow rate of the supercritical fluid that is moved to the second exhaust line 4920. The second flow valve 4920b adjusts the pressure of the supercritical fluid flowing into the second process chamber 4000 by moving the supercritical fluid at a preset second exhaust flow rate. The second flow valve 4920b and the first flow valve 4910b are provided so that the flow rates of the supercritical fluid moving through the first exhaust line 4910 and the second exhaust line 4920 are different. In one example, the first exhaust flow rate is provided to be greater than the second exhaust flow rate. The second check valve 4920c allows the supercritical fluid to move only in the direction of the supercritical fluid regeneration device 4950.

The third exhaust line 4930 has one end connected to a branch point of the first exhaust line 4910, the second exhaust line 4920, and the third exhaust line 4930, and the other end is connected to the rear exhaust line 4900. . The third exhaust line 4930 is connected in parallel with the second exhaust line 4920. The third exhaust line 4930 is used for exhausting the supercritical fluid in a process of repeating the process of supplying and evacuating the supercritical fluid during the drying process.

The third exhaust line 4930 includes a third open / close valve 4930a, a third flow valve 4930b, and a third check valve 4930c. The third open / close valve 4930a controls whether the supercritical fluid moved in the front exhaust line 4980 is moved to the third exhaust line 4930. The third flow valve 4930b regulates the flow rate of the supercritical fluid that is moved to the third exhaust line 4930. The third flow valve 4930b adjusts the pressure of the supercritical fluid introduced into the second process chamber 4000 by moving the supercritical fluid at a predetermined flow rate. The third check valve 4930c causes the supercritical fluid to move only in the direction of the supercritical fluid regeneration device 4950.

At the beginning of the exhaust process, the supercritical fluid is exhausted through the second exhaust line 4920 in the second process chamber 4000. Since the flow rate of the supercritical fluid moved to the second exhaust line 4920 is less than that of the first exhaust line 4910, the initial pressure change of the supercritical fluid in the second process chamber 4000 is reduced. As a result, particles may be prevented from occurring in the second process chamber 4000. In addition, damage to the substrate S due to the initial pressurization of the supercritical fluid can be prevented. When the supercritical fluid is exhausted through the second exhaust line 4920 and the inside of the second process chamber 4000 reaches a predetermined pressure, a large flow rate of the supercritical fluid is exhausted through the first exhaust line 4910. For this reason, process time can be shortened and process efficiency can be aimed at.

Rear exhaust line 4900 moves supercritical fluid that is moved at different flow rates through first exhaust line 4910 and second exhaust line 4920 to regeneration device 4950 of the process fluid. One side of the rear exhaust line 4900 is connected to a branch point of the first exhaust line 4910 and the second exhaust line 4920, and the other side is connected to the regeneration device 4950.

Hereinafter, a substrate drying apparatus in which a supercritical fluid is supplied and exhausted according to a modification of the present invention will be described. FIG. 6 is a view of a modification of the substrate drying apparatus in which the supply and exhaust lines of the process fluid are connected to the second process chamber of FIG. 2.

Referring to FIG. 6, the supply line 5800 includes a front supply line 5580 and a rear supply line 5590, 5891, 5892, a first supply line 5810, a second supply line 5820, and a third supply line. (5830).

Supply line 5800 further includes third supply line 5830 as compared to supply line 4800 of FIG. 5. The third supply line 5830 is provided to have a higher flow rate of the supercritical fluid that is moved than the first supply line 5810 and the second supply line 5820. The supercritical fluid is supplied at a low pressure through the first supply line 5810 at an initial stage of supply of the supercritical fluid, and when the predetermined pressure is reached, a large amount of the supercritical fluid is supplied through the third supply line 5830. Since the third supply line 5830 has a larger flow rate of the supercritical fluid that is moved than the second supply line 5820, the process time can be shortened and process efficiency can be achieved.

The third supply line 5830 is connected in parallel with the first supply line 5810 and the second supply line 5820. A front feed line 5580 is connected to one branch and a rear feed line 5590 is connected to a branch at the other end.

The third supply line 5830 includes a third open / close valve 5830a and a third flow rate valve 5830b. The third open / close valve 5830a controls whether the supercritical fluid moved in the front supply line 5580 is moved to the third supply line 5830. The third flow valve 5830b regulates the flow rate of the supercritical fluid that is moved to the third supply line 5830. The third flow valve 5830b controls the pressure of the supercritical fluid flowing into the second process chamber 4000 by moving the supercritical fluid at a predetermined flow rate. According to one example, the third flow valve 5830b may be set such that the flow rate of the supercritical fluid moving through the third supply line 5830 is greater than the flow rate of the supercritical fluid moving through the second supply line 5820. Can be.

Exhaust line 5900 includes front exhaust line 5980 and rear exhaust line 5900, first exhaust line 5910, second exhaust line 5920, third exhaust line 5930, and fourth exhaust line 5940. ).

Exhaust line 5900 further includes fourth exhaust line 5940 as compared to exhaust line 4900 of FIG. 5. The fourth exhaust line 5940 is provided to have a higher flow rate of the supercritical fluid exhausted than the first exhaust line 5910 and the second exhaust line 5920. At the beginning of the supercritical fluid exhaust, the supercritical fluid is exhausted through the first exhaust line 5910 so that the pressure change is small. When the predetermined pressure is reached, the supercritical fluid is exhausted through the fourth exhaust line 5940. . Since the fourth exhaust line 5940 has a higher flow rate of the supercritical fluid that is moved than the first and second exhaust lines 5910 and 5920, the exhaust time can be shortened and process efficiency can be achieved.

The fourth exhaust line 5940 is connected in parallel with the first exhaust line 5910, the second exhaust line 5920, and the third exhaust line 5930. A front exhaust line 5980 is connected to one branch point, and a rear exhaust line 5590 is connected to a branch point at the other end.

The fourth exhaust line 5940 includes a fourth open / close valve 5940a, a first exhaust flow rate valve 5940b, and a fourth check valve 4940c. The fourth open / close valve 5940a controls whether the supercritical fluid moved in the front exhaust line 5980 is moved to the fourth exhaust line 5940. The first exhaust flow rate valve 5940b regulates the flow rate of the supercritical fluid that is moved to the fourth exhaust line 5940. The first exhaust flow valve 5940b allows the supercritical fluid to be exhausted at a predetermined flow rate to adjust the pressure change in the second process chamber 4000. The fourth check valve 4940c allows the supercritical fluid to move only in the direction of the supercritical fluid regeneration device 5950.

Hereinafter, a substrate drying apparatus in which a supercritical fluid is supplied and exhausted according to another embodiment of the present invention will be described. FIG. 7 is a diagram of another embodiment of a substrate drying apparatus in which supply and exhaust lines of process fluid are connected to the second process chamber of FIG. 2.

Referring to FIG. 7, supply line 6800 includes a front supply line 6880, a rear supply line 6891, 6892, and a controller 6070.

The controller 6700 controls the flow valve 6880b on the supply line 6800 to regulate the flow rate of the supercritical fluid that travels the supply line 6800. The controller 6706 may adjust the flow rate of the supercritical fluid into the second process chamber 4000 by adjusting the flow valve 6880b during the process of supplying the supercritical fluid. As a result, when the supercritical fluid is supplied into the second process chamber 4000, particles may be prevented from being generated inside the second process chamber 4000, and damage to the substrate S may be prevented.

Exhaust line 6900 includes a front exhaust line 6980 and a first exhaust line 6910, a second exhaust line 6720, a first controller 6971 and a second controller 6972.

The first and second controllers 6971 and 6972 control the first and second flow valves 6910b and 6920b on the first and second exhaust lines 6910 and 6920 to control the first and second exhaust lines 6910 and 6920. Adjust the flow rate of the supercritical fluid to move 6920. The first and second controllers 6971 and 6972 adjust the first and second flow valves 6910b and 6920b during the process of supplying the supercritical fluid so that the supercritical fluid is discharged from the second process chamber 4000. Change can be controlled. As a result, when the supercritical fluid is exhausted from the second process chamber 4000, particles may be prevented from occurring in the second process chamber 4000 due to a sudden change in pressure, and damage of the substrate S may be prevented. .

Hereinafter, the substrate drying method according to the present invention will be described using the substrate processing apparatus 100 described above. However, since this is only for ease of description, the substrate drying method may be performed by using the same or similar other device in addition to the substrate processing apparatus 100 described above. In addition, the substrate drying method according to the present invention may be stored in a computer-readable recording medium in the form of a code or a program for performing the same.

Hereinafter, an embodiment of a substrate processing method will be described. One embodiment of a substrate processing method relates to the overall cleaning process.

8 is a flow chart of one embodiment of a substrate processing method.

One embodiment of the substrate processing method is a step (S110) for carrying the substrate (S) into the first process chamber 3000, performing a chemical process (S120), performing a rinse process (S130), an organic solvent Performing the process (S140), the step (S150) of loading the substrate (S) into the second process chamber 4000, performing the supercritical drying process (S160) and the container placed in the load port (1100) And storing the substrate S in C) (S170). On the other hand, the above-described steps are not necessarily executed in the order described, the steps described later may be performed before the steps described first. The same holds true for other embodiments of the substrate processing method described later. Each step will be described below.

The substrate S is loaded into the first process chamber 3000 (S110). First, a conveying device such as an overhead transferr or the like places the container C in which the substrate S is stored in the load port 1100. When the container C is placed, the index robot 1210 extracts the substrate S from the container C and loads the substrate S in the buffer slot. The substrate S loaded in the buffer slot is taken out by the transfer robot 2210 and brought into the first process chamber 3000 and seated on the support plate 3110.

When the substrate S is loaded into the first process chamber 3000, a chemical process is performed (S120). When the substrate S is placed on the support plate 3110, the nozzle shaft 3230 is moved and rotated by the nozzle shaft driver 3240, such that the nozzle 3210 is positioned above the substrate S. The nozzle 3210 sprays a cleaner on the upper surface of the substrate S. When the cleaning agent is sprayed, the foreign matter is removed from the substrate (S). At this time, the rotation driver 3130 may rotate the rotating shaft 3120 to rotate the substrate (S). When the substrate S is rotated, the cleaning agent is uniformly supplied to the substrate S and scattered from the substrate S. FIG. Flushing detergent flows into recovery vessel 3310 and is sent to a process fluid regeneration device (not shown) through recovery line 3320. At this time, the lift driver 3340 raises and lowers the recovery container 3310 such that a cleaning agent scattered into one of the plurality of recovery containers 3310 is introduced through the lifting bar 3330.

When the foreign substance on the substrate S is sufficiently removed, a rinse process is performed (S130). When the chemical process is completed, foreign matter is removed from the substrate S, and the cleaning agent remains. Of the plurality of nozzles 3210, the nozzles 3210 sprayed with the cleaner are separated from the upper portion of the substrate S, and another nozzle 3210 moves to the upper portion of the substrate S to rinse the upper surface of the substrate S. Spray it. When the rinse agent is supplied to the substrate S, the cleaning agent remaining on the substrate S is washed. Even during the rinse process, the substrate S may be rotated and the drug may be recovered. The lift driver 3340 adjusts the height of the recovery container 3310 such that the rinsing agent flows into the recovery container 3310 and the other recovery container 3310 from which the cleaning agent is collected.

When the substrate S is sufficiently washed, an organic solvent process is performed (S140). When the rinsing process is completed, another nozzle 3210 moves to the upper portion of the substrate S to spray the organic solvent. When the organic solvent is supplied, the rinse agent on the substrate S is replaced with the organic solvent. On the other hand, during the organic solvent process, the substrate S may not be rotated or may be rotated at a low speed. This is because when the organic solvent is directly evaporated on the substrate S, the interfacial tension acts on the circuit pattern by the surface tension of the organic solvent, thereby causing the circuit pattern to collapse.

When the organic solvent process is completed in the first process chamber 3000, the substrate S is loaded into the second process chamber 4000 (S150), and the second process chamber 4000 performs a supercritical drying process. Step S150 and step S160 will be described in detail in another embodiment of the substrate processing method to be described later.

When the supercritical drying process is completed, the substrate S is stored in the container C placed in the load port 1100 (S170). When the second process chamber 4000 is opened, the transfer robot 2210 pulls out the substrate S. The substrate S may move to the buffer chamber 2100, may be withdrawn from the buffer chamber 2100 by the index robot 1110, and may be stored in the container C.

Hereinafter, another embodiment of the substrate processing method will be described. Another embodiment of the substrate processing method relates to a method in which the second process chamber performs a supercritical drying process.

9 is a flowchart of one embodiment of a substrate drying method.

One embodiment of the substrate drying method is a step (S210) of loading the substrate (S) into the second process chamber 4000, the step of sealing the housing 4100 (S220), supplying a supercritical fluid at a first supply flow rate In operation S230, when the inside of the second process chamber 4000 reaches a preset pressure, supplying a supercritical fluid at a second supply flow rate in operation S240, within a predetermined pressure range within the second process chamber 4000. Supplying and evacuating the supercritical fluid at step S250, discharging the supercritical fluid at the first exhaust flow rate at step S260, and exhausting the supercritical fluid at the second exhaust flow rate when the preset pressure is reached. (S270), opening the housing 4100 (S280), and removing the substrate S from the second process chamber 4000 (S290). Hereinafter, the steps (S230 to S270) of supplying and evacuating the supercritical fluid during the above steps will be described.

10 to 14 is an operation of the substrate drying method of FIG.

Supercritical fluid is supplied into the second process chamber 4000 at the beginning of the process as follows. Referring to FIG. 10, at the beginning of the process in which the supercritical fluid is introduced, the first open / close valve 4810a of the first supply line 4810 and the open / close valve 4892a of the second rear supply line 4892 are opened, and the second The second open / close valve 4820a of the supply line 4820 and the open / close valve 4891a of the first rear supply line 4891 are closed. Thus, the supercritical fluid is supplied into the second process chamber 4000 from the storage tank 4850 through the front supply line 4880 and the first supply line 4810 and the second rear supply line 4892.

As the supercritical fluid flows into the second process chamber 4000 at the beginning of the process, the substrate S may be damaged during initial pressurization, or particles may be generated inside the second process chamber 4000. To prevent this, the first flow valve 4810b of the first supply line 4810 adjusts the flow rate of the moving supercritical fluid to the first supply flow rate. The first supply flow rate causes a low pressure change such that the substrate S is not broken or particles are generated even when the supercritical fluid is initially pressurized into the second process chamber 4000. In this case, the supercritical fluid is supplied to the lower surface of the second process chamber 4000 through the second rear supply line 4892 located far from the substrate S to prevent breakage of the substrate S.

When the supercritical fluid flows into the second process chamber 4000 and reaches a predetermined pressure, a large amount of supercritical fluid is supplied. Referring to FIG. 11, when the inside of the second process chamber 4000 reaches a predetermined pressure due to the supply of the supercritical fluid in FIG. 10, the first opening / closing valve 4810a and the second rear side of the first supply line 4810. The open / close valve 4892a of the supply line 4892 is closed, and the open / close valve 4891a of the second supply line 4820 and the open / close valve 4891a of the first rear supply line 4891 are opened. The supercritical fluid is supplied into the second process chamber 4000 through the front supply line 4880, the second supply line 4820, and the first rear supply line 4891 in the storage tank 4850. At this time, the second supply flow rate of the supercritical fluid passing through the second supply line 4820 is adjusted to be greater than the first supply flow rate of the first supply line 4810. When the inside of the second process chamber 4000 is greater than or equal to a predetermined pressure, a large amount of supercritical fluid may be supplied close to the substrate in order to increase drying efficiency because the substrate S is not damaged or particles are generated due to the pressure change. . Through this, the drying process time can be shortened and the efficiency of a drying process can be aimed at.

When the inside of the second process chamber 4000 reaches a predetermined pressure, the supercritical fluid may be simultaneously supplied through the upper and lower portions of the second process chamber 4000 to increase the process speed and efficiency. Referring to FIG. 12, as a modification of the substrate drying method, when the inside of the second process chamber 4000 reaches a predetermined pressure by supply of the supercritical fluid, the first rear supply line 4891 may be used to supply the supercritical fluid. The second rear supply line 4892 may simultaneously supply the inside of the second process chamber 4000. At this time, the first open / close valve 4810a of the first supply line 4810 is closed, the open / close valve 4891a of the first rear supply line 4891, the open / close valve 4892a of the second rear supply line 4892 and the first The second open / close valve 4820a of the second supply line 4820 opens. At this time, by increasing the supply speed of the supercritical fluid into the second process chamber 4000, the process time can be shortened and the process efficiency can be achieved.

Although not shown, the second flow rate valve 4820b of the second supply line 4820 may be adjusted during the process to adjust the flow rate of the supercritical fluid moving through the second supply line 4820. In this case, the pressure in the second process chamber 4000 may be adjusted by adjusting the flow rate of the supercritical fluid during the process without additional supply line. Through this, particles may be prevented from occurring in the second process chamber 4000, and damage to the substrate S may be prevented.

In addition, although not shown, the supercritical fluid may be supplied at a third supply flow rate that is higher than a predetermined flow rate of the supercritical fluid of the first supply line 4810 and the second supply line 4820. In this case, when the supercritical fluid is supplied through the first supply line 4810 to reach the preset pressure, the supercritical fluid may be supplied at the third supply flow rate to shorten the process time and improve the process efficiency.

Early in the process of evacuating the supercritical fluid, a small flow rate of supercritical fluid is evacuated. Referring to FIG. 13, at the initial stage of the exhaust process, the first open / close valve 4910a of the first exhaust line 4910 and the third open / close valve 4930a of the third exhaust line 4930 are closed, and the second exhaust line 4920 is closed. ), The second on-off valve 4920a is opened. Accordingly, the supercritical fluid is exhausted from the second process chamber 4000 through the front exhaust line 4980 and the second exhaust line 4910 in the second process chamber 4000.

The second flow valve 4920b of the second exhaust line 4920 may damage the substrate S due to a sudden pressure change when the supercritical fluid is initially exhausted from the second process chamber 4000 or the second process chamber 4000. The flow rate of the moving supercritical fluid is adjusted to the second exhaust flow rate so that no particles are generated therein. The second exhaust flow rate is set such that the pressure inside the second process chamber 4000 does not change rapidly at the initial stage of exhaust. Through this, generation of particles in the second process chamber 4000 and damage of the substrate S may be prevented.

When the pressure in the second process chamber 4000 reaches the predetermined pressure through the second exhaust line 4920, the supercritical fluid is exhausted through the first exhaust line 4910. Referring to FIG. 14, when the inside of the second process chamber 4000 exhausts the supercritical fluid to reach a predetermined pressure, the second open / close valve 4920a and the third exhaust line 4930 of the second exhaust line 4920. ), The third open / close valve 4930a is closed, and the first open / close valve 4910a of the first exhaust line 4910 is opened. The supercritical fluid is exhausted from the second process chamber 4000 through the front exhaust line 4980 and the first exhaust line 4910 in the first process chamber 4000. At this time, the first exhaust flow rate of the supercritical fluid exhausted through the first exhaust line 4910 is adjusted to be greater than the second exhaust flow rate of the second exhaust line 4920. When the pressure in the second process chamber 4000 reaches a predetermined pressure, the substrate S may not be damaged or particles may be generated in the second process chamber 4000 even when the pressure changes rapidly, thereby exhausting a large amount of supercritical fluid. Can be. Through this, the drying process time can be shortened and the efficiency of the drying process can be achieved.

Although not shown, the flow rate of the supercritical fluid moving through the second exhaust line 4920 may be adjusted by adjusting the second flow valve 4920b of the second exhaust line 4920 during the process. In this case, the pressure in the second process chamber 4000 may be adjusted by adjusting the flow rate of the supercritical fluid during the process without additional exhaust line. Through this, particles may be prevented from occurring in the second process chamber 4000, and damage to the substrate S may be prevented.

In addition, although not shown, the supercritical fluid may be exhausted at a third exhaust flow rate that is higher than a predetermined flow rate of the supercritical fluid of the first exhaust line 4910 and the second exhaust line 4920. In such a case, when the supercritical fluid is exhausted at the first exhaust flow rate and the predetermined pressure is reached, the supercritical fluid is exhausted at the third exhaust flow rate, so that the process time can be shortened and the process efficiency can be achieved.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

100: substrate processing apparatus 1000: index module
2000: process module 3000: first process chamber
4000: second process chamber 4850: storage tank
4800: supply line 4900: exhaust line

Claims (22)

A housing providing a space in which the drying process is performed;
A substrate support member provided in the housing to support a substrate;
A fluid supply member comprising a supply line for supplying a process fluid in a supercritical state to the housing; And
And an exhaust member including an exhaust line for exhausting the process fluid from the housing.
The supply line
A first supply line provided to supply the process fluid to the housing at a first supply flow rate; And
And a second supply line provided to supply the process fluid to the housing at a second supply flow rate. The method of claim 1,
The supply line
A front feed line connected to the reservoir of the process fluid; And
Further comprising; a rear supply line connected to the housing,
And the first supply line and the second supply line are connected in parallel to each other, and connect the front supply line and the rear supply line. The method of claim 1,
The first supply line includes a first flow valve that regulates the process fluid to move to the first supply flow rate,
The second supply line includes a second flow valve for adjusting the process fluid to move to the second supply flow rate;
And a first flow rate valve and a second flow rate valve are adjusted such that the second supply flow rate is greater than the first supply flow rate. The method of claim 3,
The supply line
And a third supply line provided with a third flow valve for controlling the process fluid to move to a third supply flow rate.
And a third flow rate valve is adjusted such that the third supply flow rate is greater than the second supply flow rate. The method of claim 3,
The supply line
A controller for adjusting the flow rate of the flow valve; further comprising,
And the controller controls the opening degree of the second flow valve during the drying process so that the flow rate of the process fluid passing through the supply line is controlled. A housing providing a space in which the drying process is performed;
A substrate support member provided in the housing to support a substrate;
A fluid supply member comprising a supply line for supplying a process fluid in a supercritical state to the housing; And
And an exhaust member including an exhaust line for exhausting the process fluid from the housing.
The exhaust line is
A first exhaust line provided to exhaust the process fluid from the housing at a first exhaust flow rate; And
And a second exhaust line provided to exhaust the process fluid from the housing at a second exhaust flow rate. The method according to claim 6,
The exhaust line is
A front exhaust line connected to the housing; And
And a rear exhaust line connected to the regeneration device of the process fluid.
And the first exhaust line and the second exhaust line are connected in parallel to each other, and connect the front exhaust line and the rear exhaust line. The method according to claim 6,
The first exhaust line comprises a first flow valve that regulates the process fluid to be exhausted at the first exhaust flow rate;
The second exhaust line includes a second flow rate valve for regulating the process fluid to be exhausted to the second exhaust flow rate;
And a first flow rate valve and a second flow rate valve are adjusted such that the first exhaust flow rate is greater than the second exhaust flow rate. 9. The method of claim 8,
The exhaust line is
A third exhaust line provided with a third flow valve for controlling the process fluid to be exhausted at a third exhaust flow rate;
And a third flow rate valve is adjusted such that the third exhaust flow rate is greater than the second exhaust flow rate. By controlling the flow rate of supplying the process fluid of the supercritical state into the housing to control the pressure inside the housing to dry the substrate,
Initially supplying the process fluid into the housing using the flow rate of the process fluid as the first supply flow rate; And
And later, the process fluid is supplied into the housing using the flow rate of the process fluid as a second supply flow rate.
And the first feed flow rate is provided less than the second feed flow rate. The method of claim 10,
Supplying at the second supply flow rate is
And supplying the process fluid to the housing at the first supply flow rate to supply the process fluid at the second supply flow rate when the set pressure is reached. 12. The method of claim 11,
The step of supplying at the first supply flow rate is the process fluid is supplied into the housing through the lower surface of the housing,
The supplying of the second supply flow rate may include supplying the process fluid into the housing through an upper surface of the housing. 12. The method of claim 11,
The step of supplying at the first supply flow rate is the process fluid is supplied into the housing through the lower surface of the housing,
The supplying of the second supply flow rate may include supplying the process fluid into the housing at the same time through the upper and lower surfaces of the housing. The method of claim 10,
And the process fluid is supplied to the housing through a different supply line for supplying at the first supply flow rate and supplying at the second supply flow rate. The method of claim 10,
And a flow rate of the process fluid is controlled by controlling a flow valve provided in the supply line. 16. The method of claim 15,
And controlling the flow rate of the process fluid and the pressure inside the housing by adjusting the flow valve while the process fluid is being supplied. 12. The method of claim 11,
The process fluid is supplied into the housing at a flow rate of the process fluid as a third supply flow rate;
When the process fluid is supplied to the housing at the first supply flow rate and reaches a set pressure, the process fluid is supplied at the third supply flow rate, and when the other set pressure is reached, the process fluid is supplied at the second supply flow rate. Substrate drying method. The substrate is dried by controlling the pressure inside the housing by controlling the flow rate of the supercritical process fluid to the outside of the housing,
Initially discharging the process fluid out of the housing using the flow rate of the process fluid as a first exhaust flow rate; And
And later discharging the process fluid to the outside of the housing using the flow rate of the process fluid as a second exhaust flow rate.
And the first exhaust flow rate is provided less than the second exhaust flow rate. 19. The method of claim 18,
The exhausting at the second exhaust flow rate is
And exhausting the process fluid from the housing at the first exhaust flow rate to reach the set pressure, wherein the process fluid is exhausted at the second exhaust flow rate. 19. The method of claim 18,
And the process fluid is evacuated from the housing through an exhaust line different from the evacuation at the first exhaust flow rate and the evacuation at the second exhaust flow rate. 19. The method of claim 18,
And a flow rate of the process fluid is controlled by controlling a flow valve provided in the supply line. 19. The method of claim 18,
And exhausting the process fluid from the inside of the housing using the flow rate of the process fluid as a third exhaust flow rate.
When the process fluid is exhausted from the housing at the first exhaust flow rate and reaches a set pressure, the process fluid is exhausted at the third exhaust flow rate, and when the other set pressure is reached, the process fluid is exhausted at the second exhaust flow rate. Substrate drying method.

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