KR20130075321A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- KR20130075321A KR20130075321A KR1020110143646A KR20110143646A KR20130075321A KR 20130075321 A KR20130075321 A KR 20130075321A KR 1020110143646 A KR1020110143646 A KR 1020110143646A KR 20110143646 A KR20110143646 A KR 20110143646A KR 20130075321 A KR20130075321 A KR 20130075321A
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- Prior art keywords
- semiconductor layer
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
An embodiment relates to a light emitting element.
Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue, and ultraviolet rays due to the development of thin film growth technology and device materials. It is possible to realize efficient white light by using fluorescent materials or combining colors, and it has low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has an advantage.
Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.
The light emitting device emits light having energy determined by an energy band inherent in a material in which electrons injected through the first conductive semiconductor layer and holes injected through the second conductive semiconductor layer meet each other to form an active layer (light emitting layer). do. In the light emitting device package, the phosphor is excited by the light emitted from the light emitting device to emit light having a longer wavelength region than the light emitted from the active layer.
1 is a view showing a conventional light emitting device.
The light emitting device is inherently a material in which electrons injected through the first conductive semiconductor layer (n-type GaN) and holes injected through the second conductive semiconductor layer (p-type GaN) meet each other to form an active layer (MQW). Emits light with energy determined by its energy band. In the light emitting device package, the phosphor is excited by the light emitted from the light emitting device to emit light having a longer wavelength region than the light emitted from the active layer.
The more electrons and holes bonded in the active layer, the higher the intensity of light emitted from the light emitting device.As the thickness of each conductive semiconductor layer is increased, the electrons and holes move smoothly due to the increase of internal resistance. If not, increasing the cross-sectional area of the conductive semiconductor layer increases the volume of the light emitting device and increases the area of the electrode.
The embodiment attempts to increase the amount of light emitted from the light emitting device.
An embodiment includes a first semiconductor layer of a first conductivity type; First and second active layers disposed under and above the first conductive layer of the first conductivity type, respectively; A second semiconductor layer of a second conductivity type disposed on the first active layer; A third semiconductor layer of the second conductivity type disposed on the second active layer; A first electrode penetrating the second semiconductor layer and the first active layer and electrically connected to the first semiconductor layer; A second electrode electrically connected to the second semiconductor layer; And a third electrode electrically connected to the third semiconductor layer, wherein the first electrode is supplied with a first polarity of a power supply, and the second electrode and the third electrode are supplied with a second polarity of the power source. Provided is a light emitting device.
The light emitting device may further include an insulating layer disposed around the first electrode to electrically block the first electrode from the second semiconductor layer and the first active layer.
The light emitting device may further include a substrate disposed on the second semiconductor layer, and the first electrode may be disposed through the substrate.
The light emitting device may further include an insulating layer disposed around the first electrode to electrically block the first electrode from the third semiconductor layer and the second active layer.
The first electrode may be inserted into the first semiconductor layer deeper than the insulating layer.
The thickness of the first semiconductor layer may be thicker than the thickness of the second semiconductor layer and the third semiconductor layer.
The insulating layer can be 1-10 micrometers in size.
The size of the first electrode may be 40% to 60% of the size of the insulating layer.
A portion of the second semiconductor layer may be exposed by mesa etching, and the second electrode may be disposed on the exposed surface of the second semiconductor layer.
Another embodiment includes a first semiconductor layer of a first conductivity type; First and second active layers disposed under and above the first conductive layer of the first conductivity type, respectively; A second semiconductor layer of a second conductivity type disposed on the first active layer; And a third semiconductor layer of the second conductivity type disposed on the second active layer, wherein a portion of the first semiconductor layer is mesa-etched to expose a portion of the surface and to the exposed surface of the first semiconductor layer. A first electrode is disposed, a portion of the second semiconductor layer is mesa-etched to expose a portion of the surface, and a second electrode is disposed on an exposed surface of the exposed second semiconductor layer, and a surface of the third semiconductor layer Provided is a light emitting device in which a third electrode is disposed.
The exposed surface of the first semiconductor layer and the second semiconductor layer may be mesa-etched side by side, and the first electrode and the second electrode may be disposed to face each other.
The second semiconductor layer may be mesa-etched to expose the surface at one edge of the first semiconductor layer, and the third semiconductor layer may be exposed at the edge of the first semiconductor layer in a direction facing the one direction. have.
The second electrode and the third electrode may be disposed to face each other with the first semiconductor layer interposed therebetween.
The first electrode may be disposed between the second electrode and the third electrode in a dot shape.
The first electrode may be disposed to face the second electrode and be parallel to each other, and the length of the first electrode may be smaller than the length of the second electrode.
The second electrode and the third electrode may each include two branch electrodes orthogonal to each other, and the first electrode may include two branch electrodes orthogonal to the two branch electrodes.
In the light emitting device according to the embodiment, a plurality of active layers are disposed to facilitate recombination of electrons and holes, so that the light efficiency is excellent, and color of the light emitting devices may be improved since the two active layers may emit light in different wavelength regions.
1 is a view showing a conventional light emitting device,
2 is a view schematically showing a configuration of a light emitting device;
3 to 5 are views showing first to third embodiments of light emitting devices;
6 is a cross-sectional view of the first electrode in the second active layer,
7A to 7D are diagrams illustrating embodiments of an electrode pad arrangement of the light emitting device of FIG. 3.
8A to 8E are views illustrating one embodiment of a method of manufacturing a light emitting device;
9a to 9e are views showing another embodiment of the manufacturing method of the light emitting device,
10 is a view showing an embodiment of a lighting device in which a light emitting element is disposed,
11 is a view showing an embodiment of a video display device in which a light emitting device is arranged.
BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.
In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.
2 is a view schematically showing the configuration of a light emitting device.
The light emitting device according to the embodiment includes one n-type semiconductor layer, two p-type semiconductors disposed on the first active layer and the second active layer disposed on both sides of the n-type semiconductor layer, and the first active layer and the second active layer, respectively. Layer. Herein, the arrangement of the n-type semiconductor layer and the p-type semiconductor layer may be changed so that two n-type semiconductor layers and one p-type semiconductor layer may be disposed in the light emitting device.
The light emitting device according to the embodiment includes two active layers to facilitate recombination of electrons and holes, so that the light efficiency is excellent, and the two active layers may emit light of different wavelength ranges. The third active layer and another n-type GaN may be disposed on the p-type GaN on the second active layer. The light emitting device in which the plurality of active layers is disposed requires the arrangement of electrode pads for supplying current to three or more conductive semiconductor layers, which will be described in detail below.
3 is a view showing a first embodiment of a light emitting device.
The
The light emitting structure including the first conductivity
The
The
The first conductivity
The first
In the first and second
The first and second
The well layer / barrier layer of the first and second
A conductive clad layer (not shown) may be formed on or under the first and second
Second conductive semiconductor layers 130 and 135 are disposed on both side surfaces of the first and second
In this embodiment, the first
The
When the n-type semiconductor layer is disposed as the first
Since the doping concentration of the p-type semiconductor layer is lower than that of the n-type semiconductor layer, in the present embodiment, two
In the
4 is a view showing a second embodiment of the light emitting device.
Unlike the light emitting device illustrated in FIG. 3, the
That is, the
In order to prevent the via hole type
5 shows a third embodiment of the light emitting element.
In the
That is, only one second
The
In order to prevent the via hole type
The
4 and 5, one
6 is a cross-sectional view of the first electrode in the second
The
A plurality of
7A to 7D are diagrams illustrating embodiments of an electrode pad arrangement of the light emitting device of FIG. 3.
In FIG. 7A, a
The first
The second
Electrons injected from the
In FIG. 7B, the
The second
Holes injected from the
7C and 7D, the exposure pattern of the first
In the embodiment illustrated in FIG. 7C, the
7C and 7, holes injected from the
8A to 8E are views illustrating one embodiment of a method of manufacturing a light emitting device.
First, as shown in FIG. 8A, the
As illustrated in FIG. 8B, the second
The composition of each layer in the light emitting structure is the same as described above, for example, Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Plasma-Enhanced (PECVD) Chemical Vapor Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), and the like, and the like, but are not limited thereto.
As shown in FIG. 8C, a portion of the first conductivity-
As shown in FIG. 8D, a portion of the first
In FIG. 8D, the surface on which the first conductivity-
As shown in FIG. 8E, the
9A to 9E illustrate another embodiment of a method of manufacturing a light emitting device.
The process shown in FIGS. 9A and 9B is the same as that shown in FIGS. 8A and 8B. 9C, the mask 200 is covered on the second
As shown in FIG. 9D, the electrode material is inserted into the above-described via hole to form the
In this case, the insulating
The above-mentioned via hole may be formed from the direction of the
When the
The light emitting device described above may be manufactured as a light emitting device package and disposed on a lighting device or an image display device. In the light emitting device package, the light emitting device may be electrically connected to two lead frames, and a phosphor for converting light of the first wavelength region emitted from the light emitting device into light of the second wavelength region may be disposed.
In the above-described light emitting device, two active layers may be disposed to facilitate recombination of electrons and holes, and color may be improved because two active layers may emit light in different wavelength regions, and when driven at a high current, Although light emission does not occur properly in the active layer of, electrons and holes may continue to recombine and emit light in another active layer. In particular, since there is a limit in increasing the doping concentration of the p-type dopant in the p-type semiconductor layer, the current supplied to the light emitting device may be increased by increasing the amount of holes injected by arranging two p-type semiconductor layers. As a result, efficiency drop, which is a problem of low luminous efficiency, can be improved.
The light emitting device package may be mounted as one or a plurality of light emitting devices according to the embodiments described above, but the present invention is not limited thereto.
A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. . Hereinafter, a head lamp and a backlight unit will be described as an embodiment of an illumination system in which the above-described light emitting device package is disposed.
10 is a view showing an embodiment of a head lamp including a light emitting device package.
The light emitted from the light emitting
The light emitting device disposed in the head lamp according to the present exemplary embodiment has a plurality of active layers, and thus, recombination of electrons and holes is performed smoothly, and thus the light efficiency is excellent. Can be.
11 is a diagram illustrating an embodiment of a display device including a light emitting device package.
As shown, the
The light source module comprises a light emitting
The
The
The
The
In the
In this embodiment, the
A liquid crystal display panel may be disposed on the
In the
A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.
A
The light emitting device disposed in the display device according to the present exemplary embodiment has a plurality of active layers, which facilitates recombination of electrons and holes, so that the light efficiency is excellent. Can be.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
100
120:
140 and 145: first and second active layers 150: first conductive semiconductor layer
160 and 165: second electrode pad 170: first electrode pad
180: insulating layer 185: first electrode
400: headlamp
410: light emitting device module 420: reflector
430: Shade 440: Lens
800: display device 810: bottom cover
820: reflector 830: circuit board module
840: Light guide plate 850, 860: First and second prism sheet
870 panel 880 color filter
Claims (16)
First and second active layers disposed under and above the first conductive layer of the first conductivity type, respectively;
A second semiconductor layer of a second conductivity type disposed under the first active layer;
A third semiconductor layer of the second conductivity type disposed on the second active layer;
A first electrode penetrating the second semiconductor layer and the first active layer and electrically connected to the first semiconductor layer;
A second electrode electrically connected to the second semiconductor layer; And
A third electrode electrically connected to the third semiconductor layer,
The first electrode is supplied with a first polarity of the power supply, and the second electrode and the third electrode is supplied with a second polarity of the power supply.
And an insulating layer disposed around the first electrode to electrically block the first electrode from the second semiconductor layer and the first active layer.
And a substrate disposed under the second semiconductor layer, wherein the first electrode is disposed through the substrate.
And an insulating layer disposed around the first electrode and electrically blocking the first electrode from the third semiconductor layer and the second active layer.
The first electrode is inserted into the first semiconductor layer deeper than the insulating layer.
The thickness of the first semiconductor layer is thicker than the thickness of the second semiconductor layer and the third semiconductor layer.
The insulating layer has a size of 1 to 10 micrometers light emitting device.
The first electrode has a size of 40% to 60% of the size of the insulating layer.
A portion of the second semiconductor layer is exposed by being mesa etched, the second electrode is disposed on the surface of the exposed second semiconductor layer.
First and second active layers disposed under and above the first conductive layer of the first conductivity type, respectively;
A second semiconductor layer of a second conductivity type disposed on the first active layer; And
A third semiconductor layer of the second conductivity type disposed on the second active layer,
A portion of the first semiconductor layer is mesa-etched to expose a portion of the surface, and a first electrode is disposed on the exposed surface of the first semiconductor layer, and a portion of the second semiconductor layer is mesa-etched to expose a portion of the surface. And a second electrode on the exposed surface of the exposed second semiconductor layer, and a third electrode on the surface of the third semiconductor layer.
The first semiconductor layer and the second semiconductor layer are mesa-etched side by side exposed side by side, the first electrode and the second electrode is disposed lightly facing each other side by side.
The second semiconductor layer is mesa-etched to expose the surface at one edge of the first semiconductor layer, and the third semiconductor layer is exposed at the edge of the first semiconductor layer in a direction facing the one direction. Light emitting element.
The second electrode and the third electrode are disposed to face each other with the first semiconductor layer therebetween.
The first electrode has a dot shape disposed between the second electrode and the third electrode.
The first electrode is disposed in parallel with the second electrode, the length of the first electrode is smaller than the length of the second electrode.
And the second electrode and the third electrode each include two branch electrodes orthogonal to each other, and the first electrode includes two branch electrodes perpendicular to the two branch electrodes.
Priority Applications (1)
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KR1020110143646A KR20130075321A (en) | 2011-12-27 | 2011-12-27 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020110143646A KR20130075321A (en) | 2011-12-27 | 2011-12-27 | Light emitting device |
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KR20130075321A true KR20130075321A (en) | 2013-07-05 |
Family
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KR1020110143646A KR20130075321A (en) | 2011-12-27 | 2011-12-27 | Light emitting device |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150142229A (en) * | 2014-06-11 | 2015-12-22 | 엘지이노텍 주식회사 | Light emitting device, and lighting system |
KR20160113791A (en) * | 2015-03-23 | 2016-10-04 | 엘지이노텍 주식회사 | A light emitting device |
CN109768134A (en) * | 2019-01-28 | 2019-05-17 | 华引芯(武汉)科技有限公司 | A kind of luminous high efficiency reversion vertical structure high-voltage chip and preparation method thereof |
US11682748B2 (en) | 2019-10-22 | 2023-06-20 | Samsung Electronics Co., Ltd. | Light-emitting diode and backplane and LED display including the same |
-
2011
- 2011-12-27 KR KR1020110143646A patent/KR20130075321A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150142229A (en) * | 2014-06-11 | 2015-12-22 | 엘지이노텍 주식회사 | Light emitting device, and lighting system |
KR20160113791A (en) * | 2015-03-23 | 2016-10-04 | 엘지이노텍 주식회사 | A light emitting device |
CN109768134A (en) * | 2019-01-28 | 2019-05-17 | 华引芯(武汉)科技有限公司 | A kind of luminous high efficiency reversion vertical structure high-voltage chip and preparation method thereof |
US11682748B2 (en) | 2019-10-22 | 2023-06-20 | Samsung Electronics Co., Ltd. | Light-emitting diode and backplane and LED display including the same |
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