KR20130016944A - Light emitting device package - Google Patents

Abstract

PURPOSE: A light emitting device package is provided to improve color shift by dotting a fluorescent substance on a light emitting diode chip. CONSTITUTION: An electrode layer includes a first electrode layer and a second electrode layer. A recessed part is formed in a part of the first electrode layer. A light emitting diode chip(250) is arranged in the recessed part of the first electrode layer. A resin layer(270) includes a fluorescent substance on the light emitting diode chip. A lens is formed on the resin layer and the electrode layer. An insulating layer pattern(210) is arranged in a lower side of the electrode layer.

Description

Light emitting device package {LIGHT EMITTING DEVICE PACKAGE}

Embodiments relate to a light emitting device package and an illumination system.

A light emitting device (LED) is a semiconductor device that converts electrical energy into light energy. By controlling the composition of a compound semiconductor, a light emitting device (LED) can realize light of various wavelengths (colors) such as red, green, blue, and ultraviolet rays. By combining this, white light with high efficiency can be realized.

The light emitting device has advantages such as low power consumption, semi-permanent lifespan, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Therefore, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) that constitutes a backlight of a liquid crystal display (LCD) display, a white light emitting diode lighting device that can replace a fluorescent lamp or an incandescent bulb, and an automobile headlight. And the application range is extended to the traffic light.

There are two types of backlight units, a direct method and an edge method, depending on the position of the light source. In the edge method, a light source is disposed on the side of a flat plate, and light emitted from the light source is irradiated onto the entire surface of the liquid crystal display panel using a light guide plate.

On the other hand, in the direct method, a plurality of light sources are disposed on the back of the liquid crystal display panel to directly irradiate light directly under the liquid crystal display panel, so that the luminance can be increased by a plurality of light sources compared to the edge method, and the light emitting surface is wider. There is an advantage to this.

The LED package PKG applied to the direct type backlight unit BLU uses a lens to control a directing angle, which causes a decrease in luminance or a mura phenomenon in the BLU. Mura is a light interference caused by a non-uniform distribution of light distribution and may mean a state in which the screen state of the panel is not uniform but is stained.

One of the important factors to determine Mura phenomenon is the area (size) of the phosphor in the LED PKG, and the yellow ring phenomenon caused by the phosphor precipitation depending on the area of the phosphor causes large color deviation. Because.

In addition, according to the prior art, a yellow ring phenomenon may occur due to thermal stress.

Improving color deviations is important in LED PKG because a yellow ring or the like must increase the distance between the LED array and the diffuser plate.

Embodiments provide a light emitting device package and an illumination system capable of improving color deviation.

The light emitting device package according to the embodiment includes an electrode layer having a first electrode layer and a second electrode layer spaced apart from each other; A recess formed in a portion of the first electrode layer; A light emitting diode chip disposed in a recess of the first electrode layer; A resin layer including phosphors on the light emitting diode chip of the concave portion of the first electrode layer; A lens on the resin layer and the electrode layer; And an insulating film pattern disposed under the electrode layer.

The embodiment can provide a light emitting device package and an illumination system capable of improving color deviation.

For example, according to the embodiment, by dotting a phosphor on a light emitting diode chip, the area of the phosphor is reduced compared to the form of filling in a conventional cup, thereby reducing color deviation, thereby reducing the occurrence of mura phenomenon and the thickness of the set. Can also be lowered.

Further, the embodiment optimizes the width of the phosphor in the range of about 800 μm to about 1000 μm and the height in the range of about 300 μm to 400 μm, and has a dome shape, which is a very advantageous structure in the direct type backlight unit.

1 is a cross-sectional view of a light emitting device package according to the embodiment.
2 is an exploded perspective view of a light emitting device package according to the embodiment;
3 is a color deviation improvement of the light emitting device package according to the embodiment.
4 to 12 are cross-sectional views of a method of manufacturing a light emitting device package according to an embodiment.
13 is a cross-sectional view of a light emitting device package according to another embodiment.
14 is a perspective view of a backlight unit according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device package 200 according to the embodiment, Figure 2 is an exploded perspective view of the light emitting device package 200 according to the embodiment.

Embodiments provide a light emitting device package and an illumination system capable of improving color deviation.

The light emitting device package 200 according to the embodiment includes an electrode layer 220 including a first electrode layer 221 and a second electrode layer 222 spaced apart from each other, and a recess formed in a portion of the first electrode layer 221. (C), a light emitting diode chip 250 disposed in the recess C of the first electrode layer, and a phosphor on the light emitting diode chip 250 of the recess C of the first electrode layer. The resin layer 270 and the insulating layer pattern 210 disposed under the lens 280 and the electrode layer 220 may be disposed on the resin layer 270 and the electrode layer 220.

The recess C of the first electrode layer may be a down-set region or a bent region with respect to a portion of the first electrode layer, but is not limited thereto.

According to the exemplary embodiment, structural stability may be improved by downsetting the electrode layer 220 to form a recess C and mounting a light emitting diode chip.

Further, according to the embodiment, after the recess C is formed on the electrode layer 220, the resin layer 270 including the LED chip mounting and the phosphor is formed to form a resin layer including the phosphor. It can be formed in a dome shape to produce a uniform color temperature can improve the color deviation.

For example, according to the embodiment, by dotting a phosphor on a light emitting diode chip, the area of the phosphor is reduced compared to the form of filling in a conventional cup, thereby reducing color deviation, thereby reducing the occurrence of mura phenomenon and the thickness of the set. Can also be lowered.

In addition, according to the embodiment, after the recess C is formed on the electrode layer 220, the light emitting diode is mounted to lower the position at which the light emitting diode chip is seated, thereby lowering the height of the wire during wire bonding. By minimizing the yellow ring phenomenon due to thermal stress can be improved.

In an embodiment, the resin layer 270 including the phosphor has a width of about 800 μm to about 1000 μm, and a height of about 300 μm to about 400 μm, and the shape of the resin layer 270 includes a dome shape. In a very advantageous structure.

3 is an exemplary view of improving color deviation of the light emitting device package 200 according to the embodiment.

According to the prior art (B), a yellow ring phenomenon due to phosphor precipitation occurs, and a large color deviation occurs.

Accordingly, Example (A) optimizes the width of the resin layer 270 including the phosphor in the range of about 800 μm to about 1000 μm, and the height in the range of about 300 μm to about 400 μm, and the shape also has a dome shape. Since the deviation is reduced to about 50% compared to the prior art, the yellow ring phenomenon due to phosphor precipitation does not occur.

Referring to FIG. 1, in the exemplary embodiment, a groove H is formed in the recess C of the first electrode layer around the resin layer 270, thereby forming a dome of the resin layer 270 including phosphors. It can be formed into a shape to reduce the color deviation.

In an embodiment, the first electrode layer 221 and the second electrode layer 222 may be electrically separated by a first electrode separation line 231, and a second electrode separation line 232 may be formed on the second electrode layer 222. It may be formed at a position symmetrical with the first electrode separation line 231 and may be stable to thermal stress. The first electrode separation line 231 and the second electrode separation line 232 may constitute an electrode separation line 230.

The light emitting diode chip 250 may be mounted after forming a die adhesive (not shown) such as silicon epoxy in the mounting region of the recess C. FIG.

The light emitting diode chip 250 may be electrically connected to the first electrode layer 221 by a first wire 261, and may be electrically connected to the second electrode layer 222 by a second wire 262. .

According to an embodiment, by dotting a phosphor on a light emitting diode chip, the area of the phosphor is reduced compared to the filling type in a conventional cup, thereby reducing color deviation, thereby reducing the occurrence of mura phenomenon and lowering the thickness of the set. .

Further, the embodiment optimizes the width of the phosphor in the range of about 800 μm to about 1000 μm and the height in the range of about 300 μm to 400 μm, and has a dome shape, which is a very advantageous structure in the direct type backlight unit.

Accordingly, according to the embodiment, it is possible to provide a light emitting device package and an illumination system capable of improving color deviation.

4 to 12 are cross-sectional views illustrating a method of manufacturing the light emitting device package 200 according to the embodiment.

First, the process of forming the electrode layer 220 including the recesses C will be described with reference to FIGS. 4 to 9.

As shown in FIG. 4, the insulating film layer 210a is prepared, and the insulating film pattern 210 is formed as shown in FIG. 5. The insulating layer pattern 210 may be formed by a punching process, but is not limited thereto.

The insulating layer pattern 210 may include a first insulating layer pattern 211 and a second insulating layer pattern 212 attached to each lower side of the first electrode layer 221 and the second electrode layer 222 which are formed later. The insulating layer pattern 210 maintains a gap between the two electrode layers and supports and fixes two adjacent electrode layers.

In addition, the insulating layer pattern 210 covers the areas of the first electrode separation line 231 and the second electrode separation line 232 disposed between two adjacent electrode layers. In this case, the resin layer 270 is formed through the electrode separation line region. It is possible to prevent the liquid resin material from leaking in the process.

The insulating layer pattern 210 may include a light transmissive or non-transparent film, and may include, for example, a PI (polyimide) film, a PET (polyethylene terephthalate) film, an EVA (ethylene vinyl acetate) film, a PEN (polyethylene naphthalate) film, and a TAC. (Traacetylcellulose) film, PAI (polyamide-imide), PEEK (polyether-ether-ketone), perfluoroalkoxy (PFA), polyphenylene sulfide (PPS), resin film (PE, PP, PET) and the like.

Next, as shown in FIG. 6, the electrode layer 220 is formed on the insulating layer pattern 210. For example, the electrode layer 220 is an alloy containing copper (Cu) such as copper (Cu), Cu-Ni, Cu-Mg-Sn, or an alloy containing iron (Fe) such as Fe-Ni. ), But may be formed of an alloy containing aluminum (Al) or aluminum, but is not limited thereto.

The electrode layer 220 may be formed to a thickness of about 15㎛ ~ 300㎛, this thickness may preferably be formed in the range of 15㎛ ~ 35㎛ and serves as a support frame for supporting the light emitting diode chip, and also light emission It can act as a heat radiating member that conducts heat generated from the diode chip.

Next, as illustrated in FIG. 7, the first electrode layer 221 and the second electrode layer 222 may be separated by etching the electrode layer 220.

In an embodiment, the first electrode layer 221 and the second electrode layer 222 may be electrically separated by a first electrode separation line 231, and a second electrode separation line 232 may be formed on the second electrode layer 222. It may be formed at a position symmetrical with the first electrode separation line 231 and may be stable to thermal stress. The first electrode separation line 231 and the second electrode separation line 232 may be formed by an etching process on the electrode layer.

In addition, in the embodiment, the groove H is formed in the first electrode layer 221 corresponding to the outer periphery of the resin layer to be formed, thereby forming the resin layer 270 including the phosphor in a dome shape to form a color deviation. Can be reduced.

The grooves H formed in the first electrode layer 221 may be formed by etching to not penetrate the first electrode layer 221 by half etching. However, the groove H is not limited thereto.

Next, as shown in FIG. 8, the process of forming the recesses C is performed with respect to the electrode layer 220.

For example, a recess C may be formed in the first electrode layer, and the recess C may be a down-set process or a punch process for a portion of the first electrode layer 221. It may be formed by, but is not limited thereto.

According to the exemplary embodiment, structural stability may be improved by downsetting the electrode layer 220 to form a recess C and mounting a light emitting diode chip.

Further, according to the embodiment, after the recess C is formed on the electrode layer 220, the resin layer 270 including the LED chip mounting and the phosphor is formed to form a resin layer including the phosphor. It can be formed in a dome shape to produce a uniform color temperature can improve the color deviation.

Next, as shown in FIG. 9, the reflective layer 240 may be formed on the electrode layer 220. The reflective layer 240 may include a first reflective layer 241 on the first electrode layer 221 and a second reflective layer 242 on the second electrode layer 222.

 The reflective layer 240 may be formed of silver (Ag), nickel (Ni), aluminum (Al), or an alloy thereof, but is not limited thereto.

Next, as shown in FIG. 10, the light emitting diode chip 250 is mounted on the recess C of the first electrode layer. For example, after forming a die adhesive (not shown) such as silicon epoxy in the mounting region of the recess C, the light emitting diode chip 250 may be mounted.

Thereafter, the light emitting diode chip 250 may be electrically connected to the first electrode layer 221 by a first wire 261, and may be electrically connected to the second electrode layer 222 by a second wire 262. Can be.

According to the embodiment, after the recess C is formed on the electrode layer 220, the light emitting diode is mounted to lower the position at which the light emitting diode chip is seated, thereby lowering the height of the wire during wire bonding, thereby minimizing the influence of thermal stress. It is possible to improve the yellow ring phenomenon due to thermal stress.

Next, as shown in FIG. 11, a resin layer 270 including phosphors is formed on the light emitting diode chip 250 of the recess C of the first electrode layer.

According to the embodiment, after the recess C is formed on the electrode layer 220, the resin layer 270 including the LED chip mounting and the phosphor is formed to form a dome shape when the resin layer including the phosphor is formed. It can be formed as a uniform color temperature can be produced to improve the color deviation.

For example, according to the embodiment, by dotting a phosphor on a light emitting diode chip, the area of the phosphor is reduced compared to the form of filling in a conventional cup, thereby reducing color deviation, thereby reducing the occurrence of mura phenomenon and the thickness of the set. Can also be lowered.

In an embodiment, the resin layer 270 including the phosphor has a width of about 800 μm to about 1000 μm, and a height of about 300 μm to about 400 μm, and the shape of the resin layer 270 includes a dome shape. In a very advantageous structure.

According to the prior art, a yellow ring phenomenon due to phosphor deposition occurs, and a large color deviation occurs.

Accordingly, the embodiment optimizes the width of the resin layer 270 including the phosphor in the range of about 800 μm to about 1000 μm, and the height in the range of about 300 μm to about 400 μm, and has a color dome shape. By reducing the level to about 50% compared to the technology, the yellow ring phenomenon due to phosphor precipitation does not occur (see FIG. 3).

Next, as shown in FIG. 12, a lens 280 is formed on the resin layer 270 and the electrode layer 220.

In an embodiment, the lens 280 may be concave in the center and circular in the peripheral part. The lens 280 may be formed of a material similar to that of the resin layer 270, and may minimize thermal expansion stress due to thermal stress. For example, the lens 280 may be formed of a silicon material, but is not limited thereto.

The embodiment can provide a light emitting device package and an illumination system capable of improving color deviation.

For example, according to the embodiment, by dotting a phosphor on a light emitting diode chip, the area of the phosphor is reduced compared to the form of filling in a conventional cup, thereby reducing color deviation, thereby reducing the occurrence of mura phenomenon and the thickness of the set. Can also be lowered.

13 is a cross-sectional view of a light emitting device package 202 according to another embodiment.

Another embodiment 202 may employ the technical features of the package 200 of the light emitting device of the above embodiment.

In another embodiment 202 may further include an optical filter 290 on the resin layer 270 including the phosphor to reduce the thermal stress to improve the yellow ring phenomenon due to the thermal stress. .

The optical filter 290 may be a glass material, but is not limited thereto. The shape of the optical filter 290 may be a dome shape or a rectangular shape, but is not limited thereto.

14 is a diagram illustrating a display device 1100 according to an embodiment.

Referring to FIG. 14, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the light emitting device package 200 disclosed above is arranged, an optical member 1154, and a display panel 1155. . The light emitting device package 202 according to another embodiment may also be employed as the light emitting device package 200.

The substrate 1020 and the light emitting device package 200 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

The optical member 1154 is disposed on the light emitting module 1060, and the light emitted from the light emitting module 1060 may be a surface light source, or diffused or collected.

The embodiment can provide a light emitting device package and an illumination system capable of improving color deviation.

For example, according to the embodiment, by dotting a phosphor on a light emitting diode chip, the area of the phosphor is reduced compared to the form of filling in a conventional cup, thereby reducing color deviation, thereby reducing the occurrence of mura phenomenon and the thickness of the set. Can also be lowered.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (6)

An electrode layer having a first electrode layer and a second electrode layer spaced apart from each other;
A recess formed in a portion of the first electrode layer;
A light emitting diode chip disposed in a recess of the first electrode layer;
A resin layer including phosphors on the light emitting diode chip of the concave portion of the first electrode layer;
A lens on the resin layer and the electrode layer; And
And an insulating film pattern disposed under the electrode layer. The method according to claim 1,
The recessed portion of the first electrode layer
The light emitting device package is a down-set region with respect to a portion of the first electrode layer. The method according to claim 1,
And a groove formed in a recess of the first electrode layer around the outer edge of the resin layer. 4. The method according to any one of claims 1 to 3,
The resin layer including the phosphor is a dome-shaped light emitting device package. 5. The method of claim 4,
The resin layer including the phosphor has a width of 800㎛ ~ 1000㎛, the height of the light emitting device package ranges from 300㎛ ~ 400㎛. The method according to claim 1,
The light emitting device package further comprises an optical filter on the resin layer containing the phosphor.

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