Nothing Special   »   [go: up one dir, main page]

KR20120047007A - Atomic layer deposition apparatus with batch type aligning n-multiple substrate - Google Patents

Atomic layer deposition apparatus with batch type aligning n-multiple substrate Download PDF

Info

Publication number
KR20120047007A
KR20120047007A KR1020100108620A KR20100108620A KR20120047007A KR 20120047007 A KR20120047007 A KR 20120047007A KR 1020100108620 A KR1020100108620 A KR 1020100108620A KR 20100108620 A KR20100108620 A KR 20100108620A KR 20120047007 A KR20120047007 A KR 20120047007A
Authority
KR
South Korea
Prior art keywords
substrate
unit
notch
finger
substrates
Prior art date
Application number
KR1020100108620A
Other languages
Korean (ko)
Inventor
이재민
Original Assignee
주식회사 케이씨텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 케이씨텍 filed Critical 주식회사 케이씨텍
Priority to KR1020100108620A priority Critical patent/KR20120047007A/en
Publication of KR20120047007A publication Critical patent/KR20120047007A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: An atomic layer deposition apparatus for aligning n-multiple substrates in a batch method is provided to shorten total processing time and improve productivity since the substrates of plural sheets are simultaneously arranged. CONSTITUTION: A plurality of fingers(123) is included in a housing and grips a substrate(10). A notch detection unit(133) is included in each finger and detects a notch(13) of the substrate. An adjusting unit(125) is included in each finger and rotates the substrate. A driving unit(131) drives the adjusting unit to add torque to a gripped substrate. A controlling unit(135) controls the notch detection unit and the adjusting unit.

Description

Atomic layer deposition apparatus that can arrange multiple substrates by batch method {ATOMIC LAYER DEPOSITION APPARATUS WITH BATCH TYPE ALIGNING N-MULTIPLE SUBSTRATE}

The present invention relates to an atomic layer deposition apparatus capable of aligning a plurality of substrates simultaneously in an atomic layer deposition apparatus.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like. Recently, as the design rules of semiconductor devices are drastically fined, thin films of fine patterns are required, and the step height of regions where thin films are formed is also very large. Due to this trend, the use of atomic layer deposition (ALD), which is capable of forming a very uniform pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing.

ALD is similar to the general chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, in contrast to conventional CVD in which multiple gas molecules are simultaneously injected into a chamber to deposit the reaction product generated on the substrate, ALD injects a gas containing one source material into the chamber to chemisorb the heated substrate. There is a difference in that a product by chemical reaction between the source materials is deposited on the substrate surface by injecting a gas containing another source material into the chamber. Such ALD has a high step coverage property and has the advantage of being capable of depositing a pure thin film having a low impurity content.

A semi-batch type is disclosed in which a deposition process is performed simultaneously on a plurality of substrates to improve throughput in an atomic layer deposition apparatus. In general, the semi-batch type atomic layer deposition apparatus has a region in which different kinds of deposition gases are injected, and the substrate is sequentially passed through each region by the high speed rotation of the gas injection module or the susceptor. Chemical reactions occur between and the reaction products are deposited.

According to embodiments of the present invention, in order to align a substrate before loading the substrate into the process module in the atomic layer deposition apparatus, an atomic layer deposition apparatus capable of reducing the overall process time by shortening the time required for transferring and aligning the substrate is provided. It is to provide.

The substrate transfer unit of the atomic layer deposition apparatus capable of simultaneously aligning a plurality of substrates according to the embodiments of the present invention includes a housing, a plurality of finger portions provided inside the housing and holding the substrate, and each of the finger portions. And a notch detecting unit configured to detect a notch of the substrate, and an adjusting unit provided at each of the finger parts to rotate the substrate. Here, the plurality of substrates can be held simultaneously and the plurality of substrates can be aligned.

According to one aspect, the finger portion is formed to hold a portion of the circumference of the substrate, a pair of fingers facing each other with the substrate therebetween is provided. The adjustment unit may be provided at a position in contact with the substrate in the finger unit, and may be a gear or a friction pad capable of rotating the substrate. The notch detecting unit may be an optical sensor that detects the notch of the substrate at each finger unit.

According to one aspect, a control unit for connecting the notch detection unit and the adjustment unit is provided, when the notch detection unit detects the notch of the substrate, the control unit stops the rotation of the substrate to align the position of the substrate can do.

On the other hand, the atomic layer deposition apparatus capable of aligning a plurality of substrates at the same time according to the embodiments of the present invention, the loading / unloading module is provided with a buffer to accommodate the plurality of substrates, the deposition process for the substrate And a transfer module which is provided between the process module and the loading / unloading module and the process module to be carried and which simultaneously holds a plurality of substrates and aligns the plurality of substrates. The transfer robot unit may include a housing, a plurality of finger parts provided in the housing to hold a substrate, a notch detection part provided in each finger part, and a notch detection part configured to detect a notch of the substrate. It is comprised including the adjustment part which rotates a board | substrate.

According to one aspect, the adjuster is provided inside the finger portion to rotate the substrate, the notch detector is provided in the finger portion to detect the notch of the substrate rotated in the adjuster to stop the rotation of the substrate Is formed.

As described above, according to the embodiments of the present invention, since a plurality of substrates can be aligned at the same time, it is possible to shorten the time required for substrate alignment to shorten the overall process time and improve productivity.

1 is a block diagram schematically showing an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a front view of an alignment unit according to an embodiment of the present invention.
3 is a plan view of the alignment unit of FIG. 2.
4 and 5 are partially enlarged views of the finger portion in the alignment unit of FIG. 3.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, an alignment unit capable of simultaneously aligning a plurality of substrates and an atomic layer deposition apparatus 100 having the same will be described in detail with reference to FIGS. 1 to 5. For reference, FIG. 1 is a block diagram schematically illustrating an atomic layer deposition apparatus 100 according to an embodiment of the present invention. 2 is a front view of the transfer robot unit 120 according to an embodiment of the present invention, and FIG. 3 is a plan view of the transfer robot unit 120. 4 and 5 are partially enlarged views of the finger part 123 in the transfer robot unit 120.

Referring to the drawings, the atomic layer deposition apparatus 100 includes a loading / unloading module 101 for loading and unloading the substrate 10 and a process module in which a deposition process is performed. 103, and a transfer module 102 for transferring the substrate 10 between the loading / unloading module 101 and the process module 103. Here, the detailed technical configuration of the atomic layer deposition apparatus 100 can be understood from the known technology and are not the gist of the present invention, and thus detailed descriptions and illustrations will be omitted and only the main components will be briefly described.

In addition, the substrate 10 may be a silicon wafer for manufacturing a semiconductor device. However, the object of the present invention is not limited to the silicon wafer, and the substrate 10 may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). . In addition, the shape and size of the substrate 10 are not limited by the drawings, and may have substantially various shapes and sizes, such as circular and rectangular plates.

The loading / unloading module 101 includes components for loading and unloading the substrate 10 into the atomic layer deposition apparatus 100, and a buffer unit 110 for storing and storing the plurality of substrates 10. It is provided. For example, the buffer unit 110 is a device capable of receiving and storing a plurality of substrates, and may be a cassette or a front opening unified pod (FOUP). In addition, since the process module 103 is simultaneously deposited on a plurality of substrates 10, the loading / unloading module 101 may include a plurality of buffer units 110.

The process module 103 accommodates the substrate 10 and sequentially supplies a predetermined deposition gas to form a thin film on the substrate 10, and simultaneously to the plurality of substrates 10 to improve throughput. It may be formed in a batch type or a semi batch type in which the process is performed. In addition, the process module 103 may include a plurality of process chambers (not shown) that accommodate the plurality of substrates 10.

On the other hand, the process module 103 is maintained in a high vacuum state inside the process module 103 due to the nature of the atomic layer deposition process, the transfer module 102 is a process module (in order to transfer the substrate 10 to the process module 103) High vacuum is maintained at a level similar to 103). Here, since the loading / unloading module 101 is in a low vacuum state compared to the process module 103, the vacuum is broken while the transfer module 102 is in communication with the atmosphere during loading and unloading of the substrate 10. In order to prevent the load lock unit (not shown) may be provided.

The transfer module 102 is provided with a transfer robot unit 120 for transferring the substrate 10 drawn out from the loading / unloading module 101 to the process module 103. Meanwhile, the transfer robot unit 120 not only grips and transfers the substrate 10, but also notches the substrate 10 before transferring the substrate 10 to the process module 103 in a state of holding the substrate 10. notch) also serves as an aligner (aligner) for aligning the position of the 13 to a predetermined position.

Here, the transfer robot unit 120 does not draw out and transfer the substrate 10 one by one, but simultaneously extracts n multiples of the substrate 10 from the buffer unit 110, and the n multiples of the substrates 10 are extracted. It is formed so that they can be aligned at the same time.

In detail, the transfer robot unit 120 is provided with n finger portions 123 for gripping n substrates 10 at the same time in the box-shaped housing 121 forming the exterior. For example, the finger part 123 may have a pair of finger parts 123 opposed to each other with the substrate 10 interposed therebetween in contact with the edge part 11 of the substrate 10 so as to contact the substrate 10. Gripping. In addition, the finger part 123 is formed to be in contact with a portion along the circumference of the substrate 10. However, the present invention is not limited by the drawings, and the finger part 123 may be formed to surround the entire circumference of the substrate 10.

The transfer robot unit 120 is spaced apart at regular intervals in the up and down direction inside the housing 121, and the finger part 123 is disposed. In addition, the transfer robot unit 120 detects the adjusting unit 125, the driving unit 131, and the notch 13 of the substrate 10 to align the positions of the notches 13 of the plurality of held substrates 10. The notch detection unit 133 is provided.

The adjusting unit 125 is provided on the inner surface of the finger portion 123 that contacts the substrate 10 to be in contact with the edge portion 11 of the substrate 10 to hold the substrate 10, and also to hold the substrate 10. The notch 13 of the board | substrate 10 is moved to the position detected by the notch detection part 133 by applying a rotational force with respect to the board | substrate 10 which was made. In addition, the adjusting unit 125 is formed of a material capable of preventing damage to the substrate 10 because the outer peripheral portion of the substrate 10 is in pressure contact, and is formed to apply a rotational force to the gripped substrate 10. do. For example, the adjusting unit 125 may be formed of a soft material that can prevent breakage of the substrate 10, and may be a gear formed to be movable along the circumferential direction of the substrate 10. However, the present invention is not limited thereto, and the adjusting unit 125 may be used in contact with the substrate 10 such as a friction pad to support and pressurize the substrate 10, and may substantially use various means for rotating the substrate 10.

The driving part 131 drives the finger part 123 and the adjusting part 125 to move and press the finger part 123 and the adjusting part 125 with respect to the substrate 10 so as to contact the substrate 10, and with respect to the gripped substrate 10. It serves to drive the adjusting unit 125 to apply a rotational force.

The notch detection unit 133 is provided at one side of the finger unit 123 to detect the notch 13 of the substrate 10. When the notch 13 detects the notch 13, the notch detection unit 133 stops the substrate 10 rotating by the adjusting unit 125 so that the notch 13 of each substrate 10 is aligned to a predetermined one position. Align 10). For example, the notch detector 133 may be provided inside the finger 123 to use an optical sensor for detecting the notch 13.

In addition, the notch detection unit 133 is provided with a notch detection unit 133 of n multiples so as to correspond to the number of the substrates 10 so as to detect the notches 13 for each substrate 10. Here, the position of the notch detecting unit 133 is not limited by the drawings, and provided at substantially various positions inside the housing as well as the finger unit 123 as long as the notch 13 of the substrate 10 can be detected. Can be.

Here, the transfer robot unit 120 is provided with a control unit 135 for gripping and aligning the substrate 10 by interlocking the notch detecting unit 133 and the adjusting unit 125.

Referring to the operation of the transfer robot unit 120 briefly, when the substrate 10 is inserted into the transfer robot unit 120, the finger 10 is driven to hold the substrate 10. In this case, the transfer of the substrate 10 may be carried out one by one or two or more sheets at the same time and fed to the transfer robot unit 120. Then, the driving unit 131 and the adjusting unit are provided with respect to the substrate 10 held at the top or the substrate 10 held at the bottom in a state where all the n-fold substrates 10 are held by the transfer robot unit 120. At 125, the substrate 10 is rotated in a gripped state. When the notch 13 is detected by the notch detector 133, the substrate 10 is aligned by stopping the rotation of the substrate 10 by the driver 131 and the adjuster 125. The notch 13 is then aligned by rotating the next substrate 10 immediately adjacent to the aligned substrate 10. In this way, by sequentially aligning the n-fold substrate 10, the n-fold substrate 10 can be aligned at the same time. The substrate 10 aligned as described above is simultaneously transferred to the process module 103 to perform a deposition process.

According to the present embodiment, since the alignment of the substrate 10 is simultaneously performed in the transfer robot unit 120 for transporting the substrate 10, the time for aligning and transferring the substrate 10 in the aligner provided as a separate object is determined. It can shorten production time and improve throughput. In addition, the transfer robot unit 120 can simultaneously transport and align n multiples of the substrate 10, thereby effectively reducing the production time.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. In addition, the present invention is not limited to the above-described embodiments, and various modifications and variations are possible to those skilled in the art to which the present invention pertains. Therefore, the spirit of the present invention should not be limited to the above-described embodiments, and all the things that are equivalent to or equivalent to the scope of the claims as well as the claims to be described later belong to the scope of the present invention.

10: Substrate
11: edge
13: notch
100: atomic layer deposition apparatus
101: loading / unloading module
102: transfer module
103: process module
110: buffer unit
120: transfer robot unit
121: housing
123: finger
125: adjuster
131: drive unit
133: notch detection unit
135: control unit

Claims (7)

housing;
A plurality of finger parts provided inside the housing to hold a substrate;
A notch detector provided in each of the fingers to detect a notch of the substrate; And
An adjusting unit provided at each of the finger parts to rotate the substrate;
Including,
A transfer robot unit for simultaneously holding a plurality of substrates and aligning the plurality of substrates.
The method of claim 1,
The finger portion is formed to hold a portion of the circumference of the substrate,
And a pair of finger parts facing each other with the substrate therebetween.
The method of claim 2,
The adjusting unit is provided in a position in contact with the substrate in the finger portion, the transfer robot unit is a gear or a friction pad that can rotate the substrate.
The method of claim 2,
And the notch detecting unit is an optical sensor that detects the notch of the substrate at each finger unit.
The method of claim 2,
A control unit for connecting the notch detection unit and the adjustment unit is provided,
And the control unit aligns the position of the substrate by stopping the rotation of the substrate when the notch of the substrate is detected by the notch detecting unit.
A loading / unloading module including a buffer unit for accommodating a plurality of substrates;
A process module for performing a deposition process on the substrate; And
A transfer module provided between the loading / unloading module and the process module, the transfer robot unit holding a plurality of substrates simultaneously and aligning the plurality of substrates;
Including,
The transfer robot unit,
housing;
A plurality of finger parts provided inside the housing to hold a substrate;
A notch detector provided in each of the fingers to detect a notch of the substrate; And
An adjusting unit provided at each of the finger parts to rotate the substrate;
Atomic layer deposition apparatus comprising a.
The method of claim 6,
The adjusting part is provided inside the finger part to rotate the substrate,
And the notch detecting unit is provided in the finger unit to detect the notch of the substrate rotating in the adjusting unit to stop the rotation of the substrate.
KR1020100108620A 2010-11-03 2010-11-03 Atomic layer deposition apparatus with batch type aligning n-multiple substrate KR20120047007A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100108620A KR20120047007A (en) 2010-11-03 2010-11-03 Atomic layer deposition apparatus with batch type aligning n-multiple substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100108620A KR20120047007A (en) 2010-11-03 2010-11-03 Atomic layer deposition apparatus with batch type aligning n-multiple substrate

Publications (1)

Publication Number Publication Date
KR20120047007A true KR20120047007A (en) 2012-05-11

Family

ID=46265904

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100108620A KR20120047007A (en) 2010-11-03 2010-11-03 Atomic layer deposition apparatus with batch type aligning n-multiple substrate

Country Status (1)

Country Link
KR (1) KR20120047007A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101715887B1 (en) 2016-05-19 2017-03-14 (주)앤피에스 Apparatus for stacking substrates, apparatus for processing substrate using the same and method thereof
CN109423629A (en) * 2017-08-31 2019-03-05 中国科学院苏州纳米技术与纳米仿生研究所 The disposable full-surface deposition work piece actuating device of disk part by performing and gaseous phase deposition stove

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101715887B1 (en) 2016-05-19 2017-03-14 (주)앤피에스 Apparatus for stacking substrates, apparatus for processing substrate using the same and method thereof
CN109423629A (en) * 2017-08-31 2019-03-05 中国科学院苏州纳米技术与纳米仿生研究所 The disposable full-surface deposition work piece actuating device of disk part by performing and gaseous phase deposition stove
CN109423629B (en) * 2017-08-31 2021-05-04 中国科学院苏州纳米技术与纳米仿生研究所 Workpiece driving device for one-time full-surface deposition of disc parts and vapor deposition furnace

Similar Documents

Publication Publication Date Title
TWI351376B (en) Longitudinal substrate transporting apparatus and
TWI482872B (en) Film deposition apparatus and film deposition method
KR101786167B1 (en) Substrate processing apparatus and substrate processing method
JP2008297584A (en) Film-forming apparatus
US20230374663A1 (en) Apparatus and method for processing substrate
KR101135853B1 (en) Atomic layer deposition apparatus
KR101520995B1 (en) Substrate conveying method, recording medium in which program is recorded for causing substrate conveying method to be executed and substrate conveyor
TWI631650B (en) Carrier for substrates and apparatus therefor
KR101760667B1 (en) The system for depositing a atomic layer
KR20120048879A (en) Semi-batch type atomic layer deposition apparatus having clamp ring
KR20120047007A (en) Atomic layer deposition apparatus with batch type aligning n-multiple substrate
KR101000219B1 (en) Atomic layer deposition apparatus
KR101126389B1 (en) Susceptor unit for atomic layer deposition apparatus
KR101028409B1 (en) Semi-batch type process module and atomic layer deposition apparatus having the same
KR20140047158A (en) Substrate transfer system and substrate transfer method
KR20130065014A (en) Atomic layer deposition apparatus to detect deformation of susceptor
KR20110006874U (en) Apparatus for multi layer deposition for atomic layer deposition
CN107887298B (en) Substrate arranging apparatus and substrate arranging method
KR100994287B1 (en) Susceptor and atomic layer deposition apparatus having the susceptor
JP4227235B2 (en) Substrate processing equipment
US8435353B2 (en) Thin film forming apparatus and method
KR20070015759A (en) Apparatus for manufacturing flat panel display
JP2004221227A (en) Substrate treating apparatus
KR100934765B1 (en) Apparatus for manufacturing flat panel display
KR102068618B1 (en) A automatic system for depositing the atomic layer

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application