KR20120033640A - Method for manufacturing semiconductor device using tungsten gapfill - Google Patents
Method for manufacturing semiconductor device using tungsten gapfill Download PDFInfo
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- KR20120033640A KR20120033640A KR1020100095266A KR20100095266A KR20120033640A KR 20120033640 A KR20120033640 A KR 20120033640A KR 1020100095266 A KR1020100095266 A KR 1020100095266A KR 20100095266 A KR20100095266 A KR 20100095266A KR 20120033640 A KR20120033640 A KR 20120033640A
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- South Korea
- Prior art keywords
- tungsten
- film
- semiconductor device
- tungsten film
- containing gas
- Prior art date
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 138
- 239000010937 tungsten Substances 0.000 title claims abstract description 138
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 138
- 238000000034 method Methods 0.000 title claims abstract description 107
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims description 59
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 30
- 238000004140 cleaning Methods 0.000 claims description 21
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 20
- 229910000077 silane Inorganic materials 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 5
- 239000006227 byproduct Substances 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 abstract description 17
- 238000005429 filling process Methods 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
- 238000002955 isolation Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 235000013399 edible fruits Nutrition 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method, and more particularly, to a semiconductor device manufacturing method involving a tungsten gapfill.
As semiconductor devices are becoming more integrated, reduced, and faster, securing a contact process margin is an urgent problem, and a device having a high signal transmission speed is required for rapid processing of information. In general, polysilicon or metal silicide having excellent thermal stability is mainly used as a material such as a gate electrode, a bit line, a metal wiring, or a metal contact.
However, with the higher integration of semiconductor devices, an alternative material having better electrical conductivity than polysilicon or metal silicide is required, and recently, tungsten (W) is mainly used as the replacement material.
Recently, a tungsten gapfill process is inevitably involved in the buried gate process and the metal contact process. The tungsten gapfill process is a process of filling tungsten in an open region having a constant aspect ratio. If the aspect ratio of the open part is large, the tungsten gapfill process should be performed using a method having excellent step coverage. Open portions include contact holes, trenches, recesses, and the like.
In the metal contact process, tungsten is gap-filled after barrier metal formation by using chemical vapor deposition (CVD) with good step coverage. In this case, tungsten may be deposited at low temperature (about 300 ° C) to improve the seam.
1A and 1B are cross-sectional views illustrating a method of manufacturing a semiconductor device according to the prior art.
As shown in FIG. 1A, a
The barrier layer 14 is formed on the entire surface including the
As shown in FIG. 1B, the tungsten film 15 is separated. To this end, the planarization process is performed by using chemical mechanical polishing (CMP). By this planarization process,
The tungsten gapfill process according to the prior art is virtually impossible to completely fill without a seam (see reference numeral 'S' in FIG. 1A), and proceeds to a level that controls the size of the seam S. FIG.
However, the shim S inevitably causes a loss of the tungsten film 15 during the planarization process such as CMP. For example, the tungsten film is excessively lost by a mechanical polishing process that is polished in the CMP process, or an excess water (H 2 O 2 ) used as a metal slurry. That is, the seam is further extended by the CMP process as shown by reference numeral 'S1'.
As the size of the seam S increases before the CMP progresses, the seam S1 by the CMP becomes more severe.
The shims (S, S1) as described above affect the subsequent gap fill process and etching process, and as the shims increase, the contact resistance increases, leading to deterioration of device characteristics.
In order to minimize the seam, a method of depositing a metal having a better gap fill capability after the CMP process of the tungsten film and then CMP is proposed, but this requires an additional deposition process and a CMP process, resulting in a low mass productivity and a high cost. Moreover, there is a problem that the seam recurs by an additional CMP process.
An object of the present invention is to provide a method for manufacturing a semiconductor device that can minimize the seam by the tungsten gapfill process.
A semiconductor device manufacturing method of the present invention for achieving the above object comprises the steps of forming a second film on the first film; Etching the second layer to form an open portion; Forming a tungsten film filling the open part on the entire surface of the second film; Separating the tungsten film so that the tungsten film remains inside the open portion; And flowing a tungsten-containing gas into the residual tungsten film. The tungsten-containing gas is characterized in that it comprises tungsten hexafluoride. In the step of flowing the tungsten-containing gas is characterized in that for further flowing a reducing gas.
In addition, the semiconductor device manufacturing method of the present invention comprises the steps of forming an insulating film on the substrate; Etching the insulating film to form a contact hole; Forming a barrier film on an entire surface of the insulating film including the contact hole; Forming a tungsten film to fill the contact hole on the barrier film; Separating the tungsten film and the barrier film so that the tungsten film remains in the contact hole; Flowing a tungsten-containing gas into the residual tungsten film; And cleaning to remove by-products remaining on the surface of the insulating film. The tungsten-containing gas is characterized in that it comprises tungsten hexafluoride. Further flowing a reducing gas in the step of flowing the tungsten-containing gas, the reducing gas is characterized in that it comprises any one of silane, hydrogen or diborane.
The present invention described above has the effect of reducing the process stability and the risk of the subsequent process and improving the device characteristics by reducing the seam by the tungsten gapfill process only by the surface treatment and cleaning process, which has less TAT (Turn Around Time) and process cost. There is.
1A and 1B are cross-sectional views illustrating a method of manufacturing a semiconductor device according to the prior art.
2A to 2D are cross-sectional views illustrating a tungsten gapfill method of a semiconductor device according to an embodiment of the present invention.
3A to 3G are cross-sectional views illustrating a method of manufacturing a buried gate using a tungsten gapfill process according to an exemplary embodiment of the present invention.
Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. .
2A to 2D are cross-sectional views illustrating a tungsten gapfill method of a semiconductor device according to an embodiment of the present invention.
As shown in FIG. 2A, a
The
Next, the
A
As shown in FIG. 2B, the
As shown in FIG. 2C, tungsten oxide may be formed after the separation process such as CMP, and thus, a pre-cleaning process is performed to remove the tungsten oxide.
Next, tungsten-containing gas such as tungsten hexafluoride (WF 6 ) gas is flowed over the entire structure including the first
Silane (SiH 4 ) may be used as a pretreatment before flowing tungsten hexafluoride (WF 6 ) gas. If the tungsten hexafluoride gas is flowed after the pretreatment using silane (SiH 4 ), the deposition of the
The reaction between silane and tungsten hexafluoride gas is as follows.
Hydrogen further improves the step coverage of the
Diborane (B 2 H 6 ) has a greater reducing power than silane, thereby further improving the step coverage of the
The
On the other hand, in order to increase the deposition rate by increasing the reactivity may be raised to 300 ℃ or more.
In order to improve the step coverage of the
Preferably, the
When the
As shown in FIG. 2D, a
On the other hand, the cleaning process may be performed using the fruit water (H 2 O 2 ) to remove the
The cleaning process (29) includes SPM (H 2 SO 4 / H 2 O 2 / DI), SC-1 cleaning, hydrofluoric acid, BOE (Buffered Oxide Etchant), phosphoric acid (H 3 PO) 4 ) It is also possible to apply cleaning processes such as series and mega sonic.
As a result, the present invention removes the seam by selectively depositing a tungsten film only in the
The tungsten gapfill process as described above may also be applied to a buried gate process.
3A to 3G are cross-sectional views illustrating a method of manufacturing a buried gate using a tungsten gapfill process according to an exemplary embodiment of the present invention.
As shown in FIG. 3A, the
Subsequently, the
An etching process for forming the
As shown in FIG. 3B, a
The barrier film 38 is formed on the entire surface including the
A first tungsten film 39 for gap filling the
As shown in FIG. 3C, the first tungsten film 39 is separated. To this end, a separation process is performed using CMP, and the
As shown in FIG. 3D, since tungsten oxide may be formed after the separation process such as CMP, a pre-cleaning process is performed to remove the tungsten oxide.
Next, tungsten-containing gas such as tungsten hexafluoride (WF 6 ) gas is flowed over the entire structure including the first
Silane (SiH 4 ) may be used as a pretreatment before flowing tungsten hexafluoride (WF 6 ) gas. If the tungsten hexafluoride gas is flowed after the pretreatment using silane (SiH 4 ), the deposition of the
Hydrogen further improves the step coverage of the
Diborane (B 2 H 6 ) has a greater reducing power than silane, thereby further improving the step coverage of the
The
On the other hand, in order to increase the deposition rate by increasing the reactivity may be raised to 300 ℃ or more.
In order to improve the step coverage of the
Preferably, the
When the
As shown in FIG. 3E, the
On the other hand, the cleaning process may be performed by using the fruit water (H 2 O 2 ) to remove the
The
As shown in FIG. 3F, the
As described above, since the
As shown in FIG. 3G, a capping layer 44 gap-filling the buried gate BG is formed. The capping film 44 includes an insulating film having excellent gap fill characteristics. For example, the capping film 44 includes an oxide film or a nitride film. The oxide film is formed by a high temperature oxidation (HTO) process or a deposition method using Tetra-Ethyl-Ortho-Silicate (TEOS). Alternatively, the deposition may be performed by plasma enhanced CVD (PECVD). The nitride film may be deposited by plasma chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), or catalytic chemical vapor deposition (Catalytic CVD).
Subsequently, the surface of the
Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, it will be understood by those of ordinary skill in the art that various embodiments are possible within the scope of the technical idea of the present invention.
21
23
25:
26
Claims (16)
Etching the second layer to form an open portion;
Forming a tungsten film filling the open part on the entire surface of the second film;
Separating the tungsten film so that the tungsten film remains inside the open portion; And
Flowing a tungsten-containing gas into the residual tungsten film;
≪ / RTI >
The tungsten-containing gas includes tungsten hexafluoride.
In the step of flowing the tungsten-containing gas,
A method for manufacturing a semiconductor device that further flows reducing gas.
The reducing gas is a semiconductor device manufacturing method comprising any one of silane, hydrogen or diborane.
The step of flowing the tungsten-containing gas,
A process for manufacturing a semiconductor device in which the process temperature is in the range of room temperature to 500 ° C, the process pressure is in the range of 0.001 to 1000 torr, and the process time is in the range of 1 to 10000 seconds.
And said first film comprises a silicon substrate and said second film comprises an insulating film.
And the open part includes a contact hole in which a contact is buried or a trench in which a buried gate is buried.
Separating the tungsten film,
A semiconductor device manufacturing method proceeding to CMP or etch back.
Before forming the tungsten film,
And forming a barrier film over the entire surface of the second film including the open portion.
Etching the insulating film to form a contact hole;
Forming a barrier film on an entire surface of the insulating film including the contact hole;
Forming a tungsten film to fill the contact hole on the barrier film;
Separating the tungsten film and the barrier film so that the tungsten film remains in the contact hole;
Flowing a tungsten-containing gas into the residual tungsten film; And
Performing cleaning to remove by-products remaining on the surface of the insulating film
≪ / RTI >
The tungsten-containing gas includes tungsten hexafluoride.
In the step of flowing the tungsten-containing gas,
A method for manufacturing a semiconductor device that further flows reducing gas.
The reducing gas is a semiconductor device manufacturing method comprising any one of silane, hydrogen or diborane.
Separating the tungsten film,
A semiconductor device manufacturing method proceeding to CMP or etch back.
The step of flowing the tungsten-containing gas,
A process for manufacturing a semiconductor device in which the process temperature is in the range of room temperature to 500 ° C, the process pressure is in the range of 0.001 to 1000 torr, and the process time is in the range of 1 to 10000 seconds.
The step of performing the cleaning,
A semiconductor device manufacturing method comprising any one of amine-based, SPM, SC-1, hydrofluoric acid-based, BOE-based, phosphoric acid-based or megasonic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100095266A KR20120033640A (en) | 2010-09-30 | 2010-09-30 | Method for manufacturing semiconductor device using tungsten gapfill |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100095266A KR20120033640A (en) | 2010-09-30 | 2010-09-30 | Method for manufacturing semiconductor device using tungsten gapfill |
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| Publication Number | Publication Date |
|---|---|
| KR20120033640A true KR20120033640A (en) | 2012-04-09 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100095266A KR20120033640A (en) | 2010-09-30 | 2010-09-30 | Method for manufacturing semiconductor device using tungsten gapfill |
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| Country | Link |
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| KR (1) | KR20120033640A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018111547A1 (en) * | 2016-12-15 | 2018-06-21 | Applied Materials, Inc. | Nucleation-free gap fill ald process |
| WO2021055399A1 (en) * | 2019-09-16 | 2021-03-25 | Tokyo Electron Limited | Method of bottom-up metallization in a recessed feature |
| US11903199B2 (en) | 2021-03-22 | 2024-02-13 | Samsung Electronics Co., Ltd. | Through via structure, semiconductor device including the through via structure, and massive data storage system including the semiconductor device |
-
2010
- 2010-09-30 KR KR1020100095266A patent/KR20120033640A/en not_active Application Discontinuation
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018111547A1 (en) * | 2016-12-15 | 2018-06-21 | Applied Materials, Inc. | Nucleation-free gap fill ald process |
| KR20190086054A (en) * | 2016-12-15 | 2019-07-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Gap-filling ALD process without nucleation |
| KR20210035353A (en) * | 2016-12-15 | 2021-03-31 | 어플라이드 머티어리얼스, 인코포레이티드 | Nucleation-free gap fill ald process |
| US11289374B2 (en) | 2016-12-15 | 2022-03-29 | Applied Materials, Inc. | Nucleation-free gap fill ALD process |
| WO2021055399A1 (en) * | 2019-09-16 | 2021-03-25 | Tokyo Electron Limited | Method of bottom-up metallization in a recessed feature |
| US11450562B2 (en) | 2019-09-16 | 2022-09-20 | Tokyo Electron Limited | Method of bottom-up metallization in a recessed feature |
| US11903199B2 (en) | 2021-03-22 | 2024-02-13 | Samsung Electronics Co., Ltd. | Through via structure, semiconductor device including the through via structure, and massive data storage system including the semiconductor device |
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