KR20110128604A - Thinner composition for removing photosensitive resin and anti-reflective coating - Google Patents

Abstract

PURPOSE: A thinner composition for removing a photosensitive resin and a reflection barrier layer is provided to apply the composition to the edge and the rear side of a substrate for removing a photosensitive film. CONSTITUTION: A thinner composition for removing a photosensitive resin and a reflection barrier layer contains the following: one component selected from glycols or their compound; and more than two compounds selected from the group consisting of propylene glycol alkyl ether acetate, propylene glycol alkyl ether, and alkylalkoxy propionate. The glycols are selected from the group consisting of ethylene glycol, propylene glycol, diethylene glycol, triethyleneglycol, tetraethylene glycol, butylene glycol, hexylene glycol, glycerine, 1,3-propanediol, 1,4-butanediol, 1,6-hexanedio, polyethylene glycol, and polypropylene glycol.

Description

Thinner composition for removing photosensitive resin and anti-reflective coating

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photosensitive resin and a thinner composition for removing an antireflection film, which are used in a semiconductor device and a thin film transistor liquid crystal display device manufacturing process.

The photolithography process of manufacturing a semiconductor device is a process of applying a photosensitive resin composition on a wafer, transferring a previously designed pattern, and composing an electronic circuit through an etching process appropriately according to the transferred pattern. This is one of the very important tasks.

The photolithography process includes (1) a coating step of uniformly applying the photosensitive resin composition to the surface of the wafer, and (2) a soft baking step of evaporating the solvent from the coated photosensitive film so that the photosensitive film adheres to the surface of the wafer. (3) an exposure process of transferring a mask pattern onto the photoresist by exposing the photoresist while repeatedly reducing the circuit pattern on the mask repeatedly and sequentially using a light source such as ultraviolet ray, and (4) exposure to a light source. Development process that selectively removes parts with different physical properties such as difference in solubility according to photosensitivity by using photodevelopment solution, and (5) to more closely adhere the photoresist film remaining on the wafer to the wafer after development. A hard baking process, (6) an etching process of etching certain portions according to the developed photoresist pattern, and (7) a fire after the process. Proceeds to such separation (剝離) step for removing the photosensitive film yohage.

In the photolithography process, the photocoating film is supplied onto the wafer and the substrate is rotated to spread the surface evenly by centrifugal force, so that the photoresist film is gathered at the edge portion and the rear surface of the substrate due to the centrifugal force to form a small spherical material. The spherical material may be peeled off during transfer of the substrate after the baking process to cause particles in the apparatus, or may cause defocus during exposure. This unnecessary photosensitive material causes equipment contamination and lowers the yield in the manufacturing process of the semiconductor device. To remove this, spray nozzles are installed above and below the edge portion and the rear portion of the substrate, and the edge portion and the rear portion are disposed through the nozzle. The thinner composition composed of the organic solvent component is sprayed to remove it.

Factors that determine the performance of the thinner composition include dissolution rate and volatility. The dissolution rate of the thinner composition is very important for the ability to dissolve and remove the photosensitive resin quickly and effectively. Specifically, in the rinse of the edge portion, it may have a smooth processing cross section only if it has an appropriate dissolution rate, and if the dissolution rate is too high, a photoresist attack may appear in the rinse of the photoresist applied to the substrate. On the contrary, when the dissolution rate is too low, a partially dissolved photosensitive film tail flow phenomenon called tailing may appear in the rinse of the photosensitive film applied to the substrate. In particular, in the case of the rinsing process using a rotary spreader due to the high integration of semiconductor integrated circuits and the large diameter of the substrate due to the high density, the low rotation speed (rpm) of the rotation speed is inevitable. In such a rinse process, when the substrate does not have a proper dissolution rate at the contact speed of the swinging composition of the substrate and the spraying of the thinner composition, a bounding phenomenon occurs, and the use of unnecessary thinner composition is increased. In the low rotation rinse process due to the large diameter of such a substrate, a stronger dissolution rate of thinner is required than the conventional high rotation rinse process.

In addition, volatility is required to not volatilize easily and remain on the surface of the substrate after removing the photosensitive resin. If the volatility is too low to remain without volatilization of the thinner composition, the remaining thinner itself may act as a contaminant in various processes, in particular, subsequent etching processes, thereby reducing the yield of semiconductor devices. If the volatility is too high, the substrate may be rapidly cooled and the thickness variation of the applied photoresist film may increase, and the volatilization may easily be volatilized to the air during use to contaminate the cleanliness itself. As a result, all kinds of defects such as tailing and photoresist attack are a direct cause of lowering the yield of semiconductor devices.

Meanwhile, the conventional thinner compositions are as follows.

Japanese Patent Application Laid-Open No. 63-69563 proposes a method of removing a thinner composition by contacting an unnecessary photosensitive film of an edge upside part, an edge side part, and an edge back side part of a substrate. have. Examples of the solvent for removing the photoresist film include ethers and ether acetates such as cellosolve acetate, propylene glycol ether, and propylene glycol ether, ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, and methyl. Ester, such as lactate, ethyl lactate, methyl acetate, ethyl acetate, and butyl acetate, is used. The solvent is used as a thinner composition, and a method of removing the thinner composition by contacting the photosensitive film of the substrate, the flue part, and the back part of the substrate is unnecessary. Japanese Laid-Open Patent Publication No. Hei 4-42523 is a thinner composition. A method of using alkoxy propionate is disclosed.

However, i-line photoresist, KrF photoresist, ArF photoresist, KrF photoresist antireflection film, ArF photoresist antireflection film, etc., which are currently used as photoresist in semiconductor lithography process, all have different main components. There is a problem that a sufficient cleaning effect cannot be obtained by itself.

In order to solve this problem, a method of using a mixture of conventional single solvents has been researched and developed.

Japanese Patent Application Laid-Open No. Hei 4-130715 uses a thinner composition composed of a mixed solvent consisting of an alkyl pyrupinic acid solvent and methyl ethyl ketone. Japanese Laid-Open Patent Publication No. 7-146562 uses a thinner composition composed of a mixture of propylene glycol alkyl ether and 3-alkoxy propionic acid alkyls. Japanese Laid-Open Patent Publication No. 7-128867 uses a thinner composition composed of a mixture of propylene glycol alkyl ether, butyl acetate and ethyl lactate or a mixture of butyl acetate, ethyl lactate and propylene glycol alkyl ether acetate. Japanese Patent Application Laid-Open No. 7-160008 uses a thinner composition composed of a mixture of propylene glycol alkyl ether propionate and methyl ethyl ketone, or a mixture of propylene glycol alkyl ether propionate and butyl acetate. U.S. Patent No. 4,983,490 uses a mixed solvent of propylene glycol alkyl ether acetate and propylene glycol alkyl ether as a thinner composition, and U.S. Patent No. 4,886,728 uses a mixture of ethyl lactate and methyl ethyl ketone as a thinner composition. .

However, even with the above-described mixed solvents, there are many difficulties in the application of semiconductor devices and thin film transistor liquid crystal display devices, which are becoming increasingly integrated and large in diameter.

On the other hand, in the process of uniformly applying the photosensitive resin composition to the wafer surface, as in the Republic of Korea Patent Publication No. 2003-0095033, the thinner is first applied before applying the photoresist on the wafer surface to lower the surface tension of the wafer The photoresist is applied in order to apply the photoresist evenly while overcoming the step difference with a small amount of photoresist.

However, even in this case, when the volatility of the thinner is high, the photoresist does not spread evenly, and the phenomenon of cracking at the edge of the wafer may occur because the step of the fine pattern cannot be overcome on the wafer. If the volatility is too low, a problem arises in which the photoresist is attacked by the remaining thinner during photoresist application. As well as volatilization, the applied shape is due to the surface tension of the organic solvent, the organic solvent included in the photoresist, and the structure of the photosensitive resin which is the main component of the photoresist, and thus requires a thinner composition that satisfies all of them.

The present invention compensates for the shortcomings of the conventional thinner composition, and the uniform removal performance of the unnecessary photoresist film generated at the edge portion or the rear portion of the substrate due to the large diameter of the substrate used in the manufacture of the semiconductor device and the thin film transistor liquid crystal display device. It is an object to provide a thinner composition having a.

In particular, the present invention has excellent solubility and EBR characteristics with respect to various photoresist and bottom anti-reflective coating (BARC) including i-line, KrF, ArF photoresist, regeneration process of photoresist and photoresist. An object of the present invention is to provide a thinner composition having excellent properties even in a process of pretreating a wafer surface in order to improve coating performance.

In order to achieve the above object, the present invention provides a photosensitive resin and a thinner composition for removing an anti-reflection film comprising one selected from the group consisting of glycols and mixtures thereof.

Specifically, the present invention (a) one selected from the group consisting of glycols and mixtures thereof; And (b) propylene glycol alkylether acetate, propylene glycol alkylether and alkylalkoxypropionate.

The thinner composition for removing the photosensitive resin and the anti-reflection film according to the present invention can be used in the edge portion and the back portion of the substrate used in the semiconductor device and the thin film transistor liquid crystal display device manufacturing method to efficiently remove unnecessary photoresist film in a short time. have. In particular, it has excellent solubility and EBR characteristics for various photoresists and lower antireflection films (BARC), including photoresists for i-line, KrF, ArF. In addition, it is used in the regeneration process of the photoresist coated wafer exhibits excellent characteristics, and also has excellent performance in the process of first applying the thinner composition to improve the coating performance of the photoresist before applying the photoresist. In addition, the thinner composition of the present invention is not toxic to the human body, there is no discomfort due to the smell has high work stability, and has a low corrosive property. In addition, the thinner composition of the present invention does not cause contamination of production equipment such as cup holders, clogging of discharge ports, etc., thereby helping to improve productivity.

1 is a view showing a point evaluation of the coating uniformity according to the type of photoresist applied on the wafer.

Hereinafter, the configuration and operation of the present invention in more detail.

The thinner composition of the present invention essentially comprises one component selected from the group consisting of glycols and mixtures thereof.

Preferably, the thinner composition of the present invention comprises (a) one selected from the group consisting of glycols and mixtures thereof; And (b) propylene glycol alkylether acetate, propylene glycol alkylether and alkylalkoxypropionate.

The one component selected from the group consisting of (a) glycols and mixtures thereof included in the thinner composition of the present invention is contained in an amount of 0.1 to 25% by weight based on the total weight of the composition, preferably 1 to 10% by weight. Included in%. When one component selected from the group consisting of glycols and mixtures thereof is contained in an amount of less than 0.1% by weight, it is difficult to obtain the effect desired in the present invention. When it is contained in an amount of more than 25% by weight, an increase in viscosity and surface tension are obtained. It does not spread evenly during application of the photoresist, and the tailing phenomenon of the photoresist occurs in the EBR process, which is not preferable.

The glycols contained in the thinner composition are not particularly limited, and for example, ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, butylene glycol, hexylene glycol, glycerin, 1,3-propane Diol, 1,4-butanediol, 1,6-hexanediol, polyethylene glycol, polypropylene glycol, and other polyalkylene glycols. Especially hexylene glycol is especially preferable. These may be used independently and may use 2 or more types together.

One or two or more components selected from the group consisting of (b) propylene glycol alkylether acetate, propylene glycol alkylether and alkylalkoxypropionate included in the thinner composition of the present invention are 75 to 99.9 based on the total weight of the composition It is included in the weight percent, preferably from 90 to 99% by weight. When the component of (b) is included in the above-described range, it is easy to appropriately control the volatilization and solubility during mixing with one component selected from the group consisting of (a) glycols and mixtures thereof.

In the propylene glycol alkyl ether acetate, the alkyl group preferably has 1 to 10 carbon atoms, more preferably one selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and mixtures thereof, It is not necessarily limited thereto.

In the propylene glycol alkyl ether, the alkyl group is preferably an alkyl group having 1 to 10 carbon atoms, more preferably one selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monoethyl ether, and mixtures thereof, but not necessarily It is not limited to this.

In the alkylalkoxypropionate, the alkyl group is preferably an alkyl group having 1 to 10 carbon atoms, and the alkoxy group is preferably an alkoxy group having 1 to 10 carbon atoms. The alkylalkoxypropionate may be one selected from the group consisting of methyl-3-methoxy propionate, ethyl-3-ethoxy propionate, and mixtures thereof, but is not limited thereto.

The thinner composition of the present invention may further include a surfactant. The surfactant may be a fluorine-based, nonionic or ionic surfactant, but is not limited thereto. The surfactant may be included in about 10 to 500 ppm by weight relative to the thinner composition of the present invention. It is preferable to include in the above-mentioned range for improving EBR characteristic.

In addition, the thinner composition of the present invention may further include conventional additives in addition to the aforementioned components in order to further improve the effect.

The thinner composition of the present invention may be used in an EBR process, a rework process, a wafer bottom surface cleaning process, and a process of pretreating the wafer surface before applying the photoresist in the photoresist coating process.

In addition, the thinner composition of the present invention can be preferably applied to a photosensitive resin using a high energy ray of 500 nm or less, X-rays and electron beams as a light source, for example, the photosensitive resin is a photoresist for i-line, KrF, ArF May be applied in the case.

The thinner composition of the present invention may be used in the manufacturing process of a semiconductor device or a thin film transistor liquid crystal display device to remove unnecessary photoresist by spraying on the edge portion and the rear portion of the substrate to which the photosensitive resin composition is applied, wherein the injection amount of the thinner composition It is preferable that it is 5-50 cc / min. Subsequently, general processes known in the art may be applied to manufacture semiconductor devices and thin film transistor liquid crystal display devices.

The thinner composition for removing the photosensitive resin and the anti-reflection film of the present invention can uniformly and in a short time remove unnecessary photoresist at the edge portion or the backside portion of the substrate caused by the large diameter of the substrate used in the manufacture of the semiconductor device.

In addition, the thinner composition of the present invention has excellent solubility in various photoresists and anti-reflective coatings (BARC), and can improve EBR characteristics, rework characteristics, and coating performance of photoresists. In particular, in the photoresist for i-line, KrF and ArF, since the basic structure of the photosensitive resin constituting is different from each other, it is necessary to control the composition content of the organic solvent in order to improve the solubility and coating property of all of them. Thinner composition satisfies this.

In addition, the thinner composition of the present invention has excellent solubility in the main components of the photoresist and the anti-reflection film having a high polarity structure, and thus, after the EBR process, the lower wafer cleaning process, and the pretreatment process on the upper wafer before the photoresist coating is finished. It also helps to increase productivity by not contaminating the cup holder of the coater or blocking the outlet.

Hereinafter, the present invention will be described in more detail with reference to examples, but the scope of the present invention is not limited thereto.

Examples 1 to 7 and Comparative Examples 1 to 3: Preparation of thinner composition for removing photosensitive resin and antireflection film

After adding as described in Table 1 to the mixing tank equipped with a stirrer, and stirred at a speed of 500rpm for 1 hour at room temperature to prepare a thinner composition for removing the photosensitive resin and anti-reflection film.

HG
(weight%) EG
(weight%) DEG
(weight%) PGMEA
(weight%) PGME
(weight%) MMP
(weight%) Example 1 7 - - 93 - - Example 2 7 - - - 93 - Example 3 7 - - - - 93 Example 4 - 5 95 - - Example 5 - - 5 95 - - Example 6 5 - - 55 40 - Example 7 5 - - 55 - 40 Comparative Example 1 - - - 100 - - Comparative Example 2 - - - - 100 - Comparative Example 3 - - - - - 100

HG: Hexylene Glycol

EG: ethylene glycol

DEG: diethylene glycol

PGMEA: Propylene Glycol Monomethyl Ether Acetate

PGME: Propylene Glycol Monomethyl Ether

MMP: Methyl-3-methoxy Propionate

Test Example 1 Experiment of Removing Unnecessary Photoresist of Thinner Composition

After applying the photosensitive resin composition shown in Table 2 to a 4 inch silicon oxide substrate, the edges under the conditions described in Table 3 using the thinner compositions of Examples 1 to 7 and Comparative Examples 1 to 3 An experiment was performed to remove unnecessary photoresist at the site (Edge Bead Removing Experiment: hereinafter referred to as EBR experiment). Here, the EBR condition 1 is a processor that waits for the dispense to move to the EBR to come to the position where the thinner is injected, and the EBR condition 2 is a processor that actually performs the EBR.

The thinner compositions of each of Examples 1 to 7 and Comparative Examples 1 to 3 were supplied from a pressure vessel equipped with a pressure gauge, and the pressure was 1 kgf, and the flow rate of the thinner composition from the EBR nozzle was 10 to 30 cc / min. . In addition, the removal performance of the unnecessary photoresist film was evaluated using an optical microscope and a scanning electron microscope, and the results are shown in Table 4 below.

division Composition type Resin series Film thickness (㎛) PR 1 PR for i-line Novolac 1.10 PR 2 PR for KrF Acetal (PHS) 0.90 PR 3 PR for ArF Acrylate 0.18 PR 4 PR for ArF Acrylate 0.15 BARC-1 BARC for KrF 0.06 BARC-2 BARC for ArF 0.04

division Rotation speed (rpm) Sec Distribution conditions 300-2000 7 Spin coating Adjustable according to the photoresist thickness 15 EBR Condition 1 2000 20 EBR Condition 2 2000 25 Dry condition 1300 6

PR 1 PR 2 PR 3 PR 4 BARC-1 BARC-2 Example 1 ◎ ○ ◎ ○ ◎ ◎ Example 2 ◎ ○ ◎ ○ ◎ ◎ Example 3 ◎ ○ ○ ○ ◎ ◎ Example 4 ◎ ○ ○ ○ ◎ ◎ Example 5 ◎ ○ ○ ○ ○ ○ Example 6 ◎ ◎ ◎ ○ ◎ ◎ Example 7 ◎ ○ ○ ○ ◎ ◎ Comparative Example 1 ◎ ○ ○ △ ○ ○ Comparative Example 2 ◎ ○ ○ △ △ ○ Comparative Example 3 ○ ○ △ △ △ ○

◎: EBR line uniformity for the photoresist film after EBR is constant

○: Good linear state with EBR line uniformity of 75% or more on the photoresist film after EBR

(Triangle | delta): The shape of the edge part after EBR was distorted by the thinner melt action.

X: Tailing phenomenon occurs at the edge film after EBR

Referring to Table 4, the thinner compositions of Examples 1 to 7 according to the present invention showed excellent EBR performance for all photoresists. On the other hand, Comparative Examples 1 to 3 it can be seen that the removal performance is significantly reduced compared to the thinner composition of the present invention according to Examples 1 to 7 in suppressing the penetration phenomenon to the photosensitive film. From this, it can be seen that the thinner composition of the present invention satisfies the EBR performance of many kinds of photoresist and lower antireflection film BARC.

In addition, even in the case of changing the rotational speed (rpm) conditions of the EBR, the same excellent shape was maintained. This means that the thinner composition according to the present invention is not only effective under specific conditions, but also exhibits the same performance under various conditions, and is more stable than the conventional thinner composition with respect to changes in process conditions.

Test Example 2: Dissolution Rate Test According to Photoresist Type

Dissolution rates for the six photoresists of Table 2 were tested using the thinner compositions of Examples 1-7 and Comparative Examples 1-3. After applying six photoresists to a 6-inch silicon oxide substrate using a DRM device, the dissolution rate was measured while developing the entire surface in each thinner composition without exposing the wafer after the soft baking process. In the case of BARC-1 and BARC-2, the dissolution rate was measured while developing the entire surface in each thinner composition without heat treatment after application. The results are shown in Table 5 below.

PR 1 PR 2 PR 3 PR 4 BARC-1 BARC-2 Example 1 ◎ ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ ◎ ◎ Example 4 ◎ ○ ◎ ◎ ◎ ◎ Example 5 ◎ ○ ◎ ◎ ◎ ◎ Example 6 ◎ ◎ ◎ ◎ ◎ ◎ Example 7 ◎ ◎ ◎ ◎ ◎ ◎ Comparative Example 1 ◎ ○ ◎ ○ ○ ◎ Comparative Example 2 ◎ ○ ◎ ○ ○ ○ Comparative Example 3 ○ ○ ○ ○ △ ○

(Double-circle): When melt rate is 700 nm / sec or more.

(Circle): When melt rate is less than 700 nm / sec from 400 nm / sec or more.

(Triangle | delta): When melt rate is less than 400 nm / sec in 100 nm / sec or more.

X: dissolution rate is 100 nm / sec or less

Test Example 3: Evaluation of Coating Uniformity According to Photoresist Type

The coating uniformities for the six photoresists of Table 2 were tested using the thinner compositions of Examples 1-7 and Comparative Examples 1-3. After the photoresist was applied on the 6-inch silicon oxide substrate according to the recipe as shown in Table 6, a total of 8 spots and 9 spots in total were X-shaped at the center of the wafer and the center of the wafer. Measurement) to see if the photoresist was uniformly applied. The results are shown in Table 7 below.

step Time (sec) Speed (rpm) Accelerator (rpm / sec) Dispense (cc) One 5 0 10,000 2.0 (Thinner) 2 5 700 10,000 0 3 3 2,000 10,000 0 4 20 2,000 10,000 0.30 (PR) 5 5 700 10,000 0 6 5 0 10,000 0

PR 1 PR 2 PR 3 PR 4 BARC-1 BARC-2 Example 1 ◎ ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ○ ◎ ◎ ◎ Example 4 ◎ ◎ ○ ◎ ○ ◎ Example 5 ◎ ◎ ○ ◎ ○ ◎ Example 6 ◎ ◎ ◎ ◎ ◎ ◎ Example 7 ◎ ◎ ◎ ◎ ◎ ◎ Comparative Example 1 ◎ ◎ ○ ○ ○ ◎ Comparative Example 2 ◎ ○ ○ ○ ○ ◎ Comparative Example 3 ◎ ○ ○ ○ △ ○

◎: when the standard deviation of the coating film thickness is 1% or less

○: when the standard deviation of the coating film thickness is 2% or less

(Triangle | delta): When the standard deviation of coating film thickness is 3% or less

X: Standard deviation of the coating film thickness is more than 3%

Test Example 4: Evaluation of Rework Performance According to Photoresist Type

The rework performance for the six photoresists of Table 2 was tested using the thinner compositions of Examples 1-7 and Comparative Examples 1-3. According to the recipe shown in Table 8, after the six photoresist was applied to the 6-inch silicon oxide substrate, the soft-baking process was completed, and the rework process was performed using each thinner composition. In the case of BARC-1 and BARC-2, the rework process was performed using the respective thinner compositions without heat treatment after coating.

The surface state of the reworked silicon oxide substrate was evaluated using TOPCON's surface scan equipment (Model name: WM-1500). The results are shown in Table 9 below.

step Time (sec) Speed (rpm) Accelerator (rpm / sec) Dispense (cc) One 2 0 10,000 0 2 2 1000 10,000 0 3 4 1000 10,000 2.0 (Thinner) 4 9.5 4000 10,000 0 5 0 0 10,000 0

PR 1 PR 2 PR 3 PR 4 BARC-1 BARC-2 Example 1 ◎ ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ ○ ◎ Example 4 ◎ ○ ◎ ◎ ○ ◎ Example 5 ◎ ○ ○ ◎ ○ ◎ Example 6 ◎ ◎ ◎ ◎ ◎ ◎ Example 7 ◎ ◎ ◎ ◎ ◎ ◎ Comparative Example 1 ◎ ○ ◎ ○ ○ ○ Comparative Example 2 ○ △ ○ ○ ○ ○ Comparative Example 3 ○ △ ○ △ △ ○

◎: When the number of surface particles reworked silicon oxide cone surface is less than 1000 as a result of surface scan

○: Surface scan result shows that the number of reworked silicon oxide surface particles is 1000 or more and less than 2000

(Triangle | delta): When the number of reworked silicic oxide surface particles as a result of surface scan is 2000 or more and less than 3000

X: Surface scan shows more than 3000 reworked silicon oxide surface particles

According to the results of Test Examples 2 to 4, the thinner composition of Examples 1 to 7 according to the present invention was compared to the thinner composition of Comparative Examples 1 to 3 to find out the dissolution rate, coating uniformity, and rework characteristics of various photoresists. It can be seen that the results are better in all aspects.

Claims (10)

(a) A thinner composition for removing a photosensitive resin and an anti-reflection film comprising one selected from the group consisting of glycols and mixtures thereof.
(a) one selected from the group consisting of glycols and mixtures thereof; And (b) one or two or more components selected from the group consisting of propylene glycol alkylether acetate, propylene glycol alkylether and alkylalkoxypropionate.
The method of claim 1 or 2, wherein the glycol is ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, butylene glycol, hexylene glycol, glycerin, 1,3-propanediol, 1,4 -A thinner composition, characterized in that one kind selected from the group consisting of butanediol, 1,6-hexanediol, polyethylene glycol, and polypropylene glycol.
The method according to claim 2, wherein the total weight of the composition,
(a) 0.1 to 25% by weight of one kind selected from the group consisting of glycols and mixtures thereof, and
(b) A thinner composition comprising 75 to 99.9 wt% of one or two or more components selected from the group consisting of propylene glycol alkylether acetate, propylene glycol alkylether and alkylalkoxypropionate.
The thinner composition according to claim 2, wherein the propylene glycol alkyl ether acetate is one selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and mixtures thereof.
The thinner composition according to claim 2, wherein the propylene glycol alkyl ether is one selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monoethyl ether, and mixtures thereof.
The thinner composition according to claim 2, wherein the alkylalkoxypropionate is one selected from the group consisting of methyl-3-methoxy propionate, ethyl-3-ethoxy propionate, and mixtures thereof.
The thinner composition according to claim 1 or 2, further comprising a surfactant in the thinner composition.
The thinner composition according to claim 1 or 2, wherein the photosensitive resin is a photoresist for i-line, KrF, and ArF.
The method according to claim 1 or 2, wherein the thinner composition is used in a process of pretreating the wafer surface before applying the photoresist in an EBR process, a rework process, a wafer bottom surface cleaning process or a photoresist application process. Thinner composition, characterized in that.

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