KR20090128811A - Display device - Google Patents

Abstract

PURPOSE: A display device equipping a flexible printed circuit is provided to improve the stability and reliability of the display device by controlling the bending degree of the flexible printed circuit connected to the display device. CONSTITUTION: An insulation film(210) comprises one or more holes(220). First and second metal layers locate on the insulation film. The insulation film comprises the first, the second and third sides. The first side is located on the inner circumference of the hole. The second side is located on the upper side of the insulating film. The third side is located on the lower side of the insulation film. The first and the second metal layer locate the second side and the third side of the first metal layer.

Description

Display Device

The present invention relates to a display device, and more particularly, to a display device including a flexible film.

A flexible printed circuit (FPC) is an essential component of a thin display device. An example of an FPC is a flexible copper clad laminate (FCCL).

As a method for producing a metal layer of FPC or FCCL, it can be divided into sputtering method, casting method and laminating method.

First, the sputtering method is a method of forming a metal layer on the polyimide film using the sputtering method, and the casting method is a method of forming an FCCL by applying a liquid polyimide on the metal thin film layer and casting it. to be. In addition, laminating method is a method of apply | coating an adhesive agent on a polyimide film, and attaching a metal thin film by the laminating method.

In the above-described method, the sputtering method is to damage the surface of the polyimide film, there is a problem that the smoothness is lowered, the casting method has a problem that the kind of polyimide film that can be used is limited, the laminating method is an adhesive used There is a problem that it is not easy to manufacture due to the limitation of physical properties.

Accordingly, in FPC or FCCL to date, there is a demand for FPC or FCCL having improved physical properties such as peel strength.

The present invention provides a display device including a flexible film having excellent stability and reliability.

The display device according to an exemplary embodiment of the present invention may include a display panel and a flexible film connected to a pad part of the display panel, and one end of the flexible film may be bent upward or downward based on the pad part.

The display device according to an embodiment of the present invention has the advantage of improving the stability and reliability of the display device by adjusting the degree of warpage of the flexible film connected to the display device.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 1, the display device 100 according to an exemplary embodiment includes a flexible film 120 connected to the display panel 110 and the display panel 110 to transmit a driving signal from a driver. It may include.

The display device according to the present embodiment may be a flat panel display (FPD), for example, a liquid crystal display (LCD), a plasma display panel (PDP) or an organic field It may be an organic light emitting display device (OLED).

The display panel 110 may include a first substrate 111 and a second substrate 112.

The first substrate 111 may include a plurality of pixels for displaying an image. The pixels may be formed by alternately arranging a plurality of electrodes connected to the driving unit. For example, the first electrode may be arranged in a horizontal direction, and the second electrode may be arranged perpendicularly to the first electrode.

The second substrate 112 may be a transparent glass substrate encapsulating the first substrate 111.

The flexible film 120 serves to transmit a signal of the driver to the display panel 110 and may be connected to one end of the display panel 110.

The flexible film 120 is a flexible film having a predetermined circuit pattern printed thereon, and includes an insulating film, metal layers positioned on the insulating film, circuit patterns formed on the metal layers, and an integrated circuit chip connected to the circuit pattern. IC) and the like. Detailed description of the flexible film 120 will be described later.

2A and 2B are cross-sectional views taken along line II ′ of FIG. 1.

2A and 2B, a display device 100 according to an exemplary embodiment of the present invention includes a display panel 110 and a display panel including a first substrate 111 and a second substrate 112. It includes a flexible film 120 connected to the pad portion 115 of the 110, one end of the flexible film 120 may be bent upward or downward based on the pad portion 115.

Here, the pad 115 may be a region where the electrodes of the first substrate 110 constituting the display panel 110 are exposed to the outside, and the flexible film 120 is bent based on the pad 115. It is based on the surface of the pad portion 115 region.

First, as illustrated in FIG. 2A, the flexible film 120 may be bent upward based on the pad part 115. This is because the flexible film 120 itself has flexibility.

Here, the flexible film 120 may have a distance d ₁ bent upward based on the pad part 115 to be within 9 mm. This is because the electrode A of the pad portion 115 may be exposed by lifting the region A to which the end of the pad portion 115 and the flexible film 120 are adhered.

The following Table 1 is a result of measuring whether the electrode of the pad unit 115 according to the distance (d ₁ ) the flexible film 120 is bent upward based on the pad unit 115 is measured.

Distance of Flexible Film Flipped Up (mm) Electrode Exposed 0 × One × 2 × 3 × 4 × 5 × 6 × 7 × 8 × 9 × 10 ○ 11 ○

                             ×: not exposed, ○: exposed

Referring to Table 1, when the distance d ₁ of the flexible film 120 is bent upward based on the pad part 115 is 0 to 9 mm, the electrode of the pad part 115 adhered to the flexible film 120. Although not exposed, when the distance d _{1 of the} flexible film 120 is curved upward, the electrode of the pad unit 115 may be exposed.

Therefore, the display device 100 according to an exemplary embodiment of the present invention adjusts the bent distance of the flexible film 120 adhered to the pad portion 115 of the display device 100, so that the electrode of the pad portion 115 is adjusted. Since it is not exposed, there is an advantage of improving the stability and reliability of the display device.

Meanwhile, referring to FIG. 2B, the flexible film 120 may be bent downward based on the pad part 115.

Herein, the flexible film 120 may have a distance d ₂ bent downward based on the pad part 115 to be within ₂ mm. This is because the edge of the flexible film 120 and the region B to which the pad portion 115 is attached are raised, so that the electrodes of the pad portion 120 may be exposed.

Table 2 below shows the results of measuring whether the electrode of the pad unit 115 is exposed according to the distance d ₂ of the flexible film 120 bent downward based on the pad unit 115.

Flexible film roll down distance (mm) Electrode Exposed 0 × 0.5 × One × 1.5 × 2 × 2.5 ○ 3 ○ 3.5 ○ 4 ○

                             ×: not exposed, ○: exposed

Referring to Table 2, when the distance d ₂ of the flexible film 120 is bent downward based on the pad part 115 is 0 to 2 mm, the electrode of the pad part 115 adhered to the flexible film 120. Although not exposed, when the distance d _{2 of the} flexible film 120 is bent downward exceeds 2 mm, the electrode of the pad part 115 may be exposed.

Therefore, the display device 100 according to an exemplary embodiment of the present invention adjusts the bent distance of the flexible film 120 adhered to the pad portion 115 of the display device 100, so that the electrode of the pad portion 115 is adjusted. Since it is not exposed, there is an advantage of improving the stability and reliability of the display device.

3A is a view illustrating a flexible film according to an embodiment of the present invention, and FIGS. 3B to 3D are cross-sectional views taken along line II-II 'of FIG. 3A.

3A to 3D, the flexible film (FPC) 200 of the present invention is used in a tape automated bonding (TAP) method, and is connected to a circuit of a driving unit and an electrode of a panel to apply a signal applied by the driving unit to the panel. To pass.

The flexible film 200 includes an insulating film 210 including one or more holes 220, a first metal layer 231 and a second metal layer 231 positioned on the insulating film 210, and the insulation The film 210 has a first surface 211a that is an inner circumferential surface of the hole 220, a second surface 211b that is an upper surface of the insulating film 210, and a third surface 211c that is a lower surface of the insulating film 210. Wherein the first metal layer 231 and the second metal layer 232 are at least one of the second surface 211b and the third surface 211c and the first surface 211a. It can be located on.

The insulating film 210 may use any one selected from the group consisting of polyester, polyimide, liquid crystal polymer, and fluororesin film, and may be preferably polyimide.

Insulating film 210 may be made of a thickness of 12 to 50㎛, may have a ductility.

In addition, the insulating film 210 may include a first surface 211a, which is an inner circumferential surface of the hole 220, a second surface 211b, which is an upper surface of the insulating film 210 other than the first surface 211a, and the first surface. A third surface 211c which is a lower surface of the insulating film 210 other than the surface 211a may be included.

When the assembly of the display device is assembled, the hole 220 may serve to connect with the electrode or the driving unit of the panel positioned below the flexible film 200, and the hole 220 may have a diameter of 30 to 1000 μm. . Here, the diameter (d) of the hole 220 may refer to a gap between portions where the first surface 211a meets the horizontal surface of the second surface 211a of the insulating film 210.

As shown in FIG. 3B, the hole 220 has an angle formed by the first surface 211a and the second surface 211b of the insulating film 210 at an obtuse angle with respect to the second surface 211b. Can be.

Alternatively, as shown in FIG. 3C, the hole 220 may have a right angle at an angle formed between the first surface 211a and the second surface 211b of the insulating film 210, as shown in FIG. 3D. Similarly, an angle formed by the first surface 211a and the second surface 211b may be an acute angle with respect to the second surface 211a.

The first metal layer 231 may be formed by an electroless plating method, and may be any one or more selected from the group consisting of nickel (Ni), gold (Au), chromium (Cr), and copper (Cu). Preferably, in consideration of the efficiency of the process may be formed of nickel or copper excellent in electrical conductivity.

The first metal layer 231 may be formed of a single layer made of any one of nickel or copper, or a multilayer of nickel / copper.

Unlike the first metal layer 231, the second metal layer 232 may be formed by electroplating, and may be made of gold (Au) or copper (Cu). However, the second metal layer 232 may be made of copper, which is advantageous in terms of manufacturing unit cost.

Here, the thickness T ₁ of the first metal layer 231 may be thinner than the thickness T ₂ of the second metal layer 232.

In more detail, the first metal layer 231 may be a metal seed layer for plating the second metal layer 232 later, and may be formed by an electroless plating method. Therefore, the thickness T ₁ of the first metal layer 231 may be very thin, and may be preferably made of a thickness of 0.02 to 0.2 μm.

The second metal layer 232 is formed on the entire surface of the first metal layer 231 and may be formed by an electroplating method. The thickness T ₂ of the second metal layer 232 may be thicker than the thickness T ₁ of the first metal layer 231, and may be preferably 2 to 50 μm thick.

In addition, the second metal layer 232 positioned on the first surface 211a of the insulating film 210 may be formed to have a thickness of 2 to 40 μm, and the second surface 211b and the second film of the insulating film 210 may be formed. The second metal layer 232 positioned on the third surface 211c may have a thickness of 3 to 50 μm.

The following Table 3 shows the results of the measurement of the stability, and the peel strength of the flexible film according to the thickness (T ₁₎ to the thickness (T ₂₎ of the second metal layer 232 of the first metal layer (231).

Thickness of the first metal layer: thickness of the second metal layer stability Peel strength 1: 5 ○ x 1:10 ○ ○ 1:50 ○ ○ 1: 100 ○ ○ 1: 400 ◎ ◎ 1: 500 ◎ ◎ 1: 1000 ○ ○ 1: 2000 ○ ○ 1: 2500 ○ ○ 1: 3000 x ○

                                   ×: bad, ○: good, ◎: very good

Referring to Table 3, the thickness of the first metal layer (231) (T ₁₎ to the thickness of the second metal layer (232) (T ₂₎ is from 1:10 to 1: may have a ratio of 2500. If the thickness T ₁ of the first metal layer 231 is less than or equal to 1/10 of the thickness T ₂ of the second metal layer 232, the electroless plating process time for forming the first metal layer 231 becomes long, thereby providing a process solution. sub ingredient, due has an advantage to prevent the peel strength of the first metal layer surface decreases the thickness of the first metal layer 231 is included in the (T ₁₎ 1 having a thickness (T ₂₎ of the second metal layer 232 If it is more than / 2500, there is an advantage of preventing the first metal layer 231 from being replaced with tin in the process of forming a circuit pattern on the metal layers and forming a tin layer on the circuit pattern.

Further, the sum of the first metal layer 231, the thickness (T ₁₎ to the thickness (T ₂₎ of the second metal layer 232 of can be less than 3/1000 to 1/2 of the diameter (d) of the hole (220) .

The following Table 4 shows the flexible film 200 according to an agreed proportion of the diameter (d) and the thickness of the first metal layer (231), (T ₁₎ to the thickness of the second metal layer (232) (T ₂₎ of the hole (220) This is the result of measuring the stability and peel strength.

The ratio of the diameter of the hole to the sum of the thicknesses of the first metal layer and the second metal layer stability Peel strength 1: 1000 × × 3: 1000 ○ ○ 1: 500 ○ ○ 1: 300 ○ ○ 1: 100 ◎ ◎ 1:50 ◎ ◎ 1:10 ◎ ◎ 1: 5 ○ ○ 1: 2 ○ ○ 1: 1 × ○

                                    ×: bad, ○: good, ◎: very good

Referring to Table 4, the thickness of the first metal layer (231), (T ₁₎ and the sum of the thickness (T ₂₎ of the second metal layer 232 to 3/1000 of the diameter (d) of the hole (220) 1 / May be less than two. Here, when the sum (T ₁ + T ₂ ) of the thicknesses of the first metal layer 231 and the second metal layer 232 is 3/1000 or more of the diameter d of the hole 220, the insulating film 210 is formed on the insulating film 210. Since the metal layers may be formed to have a uniform thickness, the flexible film 200 may have excellent stability, and the sum (T ₁ + T ₂ ) of the thicknesses of the first metal layer 231 and the second metal layer 232 may be a hole ( If less than 1/2 of the diameter (d) of 220, the thickness of the metal layer is thick, there is an advantage that can prevent the problem that can fill the hole 220.

As described above, the flexible film according to an embodiment of the present invention has an advantage of improving the stability of the flexible film by changing the thickness of the metal layer of the insulating film.

In addition, by controlling the thickness of the metal layers to prevent holes from filling, there is an advantage that the flexible film can give reliability to the connection with the driving unit or the panel electrode. Therefore, a flexible film having excellent stability and reliability can be provided.

4A to 4C are views illustrating the flexible film 300 according to another embodiment of the present invention.

4A to 4C, the flexible film 300 according to another embodiment of the present invention may include an insulating film 310 including one or more holes 320 and a first film disposed on the insulating film 310. A metal layer 331 and a second metal layer 331, the insulating film 310 is the first surface 311a, the inner peripheral surface of the hole 320, the second surface (top surface of the insulating film 310) 311b) and a third surface 311c, which is a lower surface of the insulating film 310, wherein the first metal layer 331 and the second metal layer 332 are the second surface 311b and the third surface. It may be positioned on at least one surface of the 311c and the first surface 311a.

In another embodiment of the present invention, unlike the above-described embodiment, the first metal layer 331 and the second metal layer 332 are formed on the first surface 311a and the second surface 311b of the insulating film 310. Can be located.

As illustrated in FIG. 4A, the hole 320 has an angle formed by the first surface 311a and the second surface 311b of the insulating film 310 at an obtuse angle with respect to the second surface 311b. Can be.

Alternatively, as shown in FIG. 4B, the hole 320 may be formed at right angles between the first surface 311a and the second surface 311b of the insulating film 310, as shown in FIG. 4C. Similarly, an angle formed by the first surface 311a and the second surface 311b may be an acute angle with respect to the second surface 311b.

Here, the thickness T ₁ of the first metal layer 331 may be thinner than the thickness T ₂ of the second metal layer 332.

In more detail, the first metal layer 331 may be a metal seed layer for plating the second metal layer 332 later, and may be formed by an electroless plating method. Therefore, the thickness T ₁ of the first metal layer 331 may be very thin, and may be preferably made of a thickness of 0.02 to 0.2 μm.

The second metal layer 332 is formed on the entire surface of the first metal layer 331, and may be formed by an electroplating method. The thickness T ₂ of the second metal layer 332 may be thicker than the thickness T ₁ of the first metal layer 331, preferably, 2 to 50 μm.

As in the aforementioned embodiment, the thickness of the first metal layer (331) (T ₁₎ to the thickness of the second metal layer (332) (T ₂₎ is from 1:10 to 1: may have a ratio of 2500. Further, the sum of the first metal layer 331, the thickness (T ₁₎ to the thickness (T ₂₎ of the second metal layer 332 of can be less than 3/1000 to 1/2 of the diameter (d) of the hole (320) . Hereinafter, since the detailed description of the flexible film has been described in the above-described embodiment, the description thereof is omitted in the present embodiment.

Hereinafter, the manufacturing method of the flexible film according to an embodiment of the present invention described above will be described.

At least one hole is formed on the polyimide film which is the insulating film. The hole is formed in a predetermined region of the insulating film, the diameter of the hole may be formed to 30 to 1000㎛.

The hole forming method may be any one selected from the group consisting of a chemical etching method, a driller method, and a laser etching method.

Conventionally, since holes are formed after the metal layers are formed on the insulating film, there is an inconvenience in that the metal layer is plated again in the hole region. However, in the present invention, the metal layers are formed after the hole is formed on the insulating film, thereby forming a process. There is an advantage that the time is short and the hole formation is easy.

Next, a degreasing process is performed on the polyimide film in which the hole is formed. The degreasing step is a step for removing impurities on the surface generated during the production or handling of the polyimide film. If the degreasing process is not performed, the peeling strength of the flexible film may decrease.

Degreasing solution that can be used in the degreasing process may be an alkali rinse or shampoo, but is not limited thereto.

The degreasing process is preferably performed for about 5 minutes at a temperature range of 20 to 30 ℃. Here, when the temperature of the degreasing process is 20 ℃ or more, it is possible to prevent the disadvantage that the degreasing effect is low due to low activity of the degreasing liquid, and if the temperature of the degreasing process is 30 ℃ or less, it is difficult to control the process holding time becomes difficult. There is an advantage to this.

Subsequently, the surface of the polyimide film subjected to the degreasing process described above is modified.

In the surface modification process, the surface of the polyimide film is etched using an etching solution. As the etching solution, a mixed solution of potassium hydroxide, ethylene glycol and potassium hydroxide, and a mixed solution of chromic anhydride and sulfuric acid may be used. .

The surface modification process may be performed for 5 to 10 minutes in the temperature range of 40 to 50 ℃. When the process temperature of the surface modification process is 40 ° C. or higher, the activity of the etching solution is lowered, so that the disadvantage of the etching effect is insufficient and the long-term reaction may cause partial damage to the surface of the polyimide film. If the process temperature is 50 ° C. or less, it is possible to prevent a disadvantage that it is difficult to control uniformity and continuity of the surface of the polyimide film due to rapid progress of etching.

The polyimide film subjected to the surface modification process may enhance peel strength by maximizing adhesion to the metal seed layer during the plating process. This etching process may cleave the imide ring of the polyimide film and convert the imide ring into an amide group (-CONH) or a carboxyl group (-COOH) to increase the reactivity.

Subsequently, a neutralization process is performed on the polyimide film subjected to the aforementioned surface modification process.

The neutralization process neutralizes the polyimide film with an acid neutralization solution if the etching solution was alkaline in the previous surface modification process and with an alkali neutralization solution if the etching solution was acidic.

The neutralization process may remove and remove K ⁺ ions or Cr ^{3 +} ions that may interact and remain in the amide or carboxyl groups on the surface of the polyimide film obtained in the surface modification process by H ⁺ of an acidic solution.

If K ⁺ ions or Cr ^{3 +} ions remain on the surface of the polyimide film, in the later polarization step, the K ⁺ ions or Cr ^{3 +} ions are coupled to the polarization of the polyimide film. Competition with the coupling ions interferes with the reaction of the amide or carboxyl groups.

The temperature range of the neutralization process may be carried out at 10 to 30 ℃. If the temperature of the neutralization process is 10 ° C or more, the activity of the reaction solution is low, so that the neutralization effect is insufficient and the surface of the polyimide film can be prevented from being damaged. If the temperature of the neutralization process is 30 ° C or less, it is abrupt. By the reaction, it is possible to prevent the disadvantage that it is difficult to control the overall uniformity and continuity.

The above-mentioned neutralization process is not essential and can be selectively applied as needed.

Subsequently, the polarization process is performed using the coupling solution to the polyimide film subjected to the neutralization process.

The polarization process binds coupling ions where the imide rings on the surface of the polyimide film are cleaved by the etching process to impart polarity to the surface of the polyimide film, thereby facilitating the subsequent plating process and improving peel strength. Can be.

The coupling solution used in the polarization process may be a silane coupling agent or an amine coupling agent, but is not limited thereto.

Polarization process may be performed for 5 to 10 minutes in the temperature range of 20 to 30 ℃.

Next, the polyimide film subjected to the polarization process is immersed at room temperature using an acidic solution to remove coupling ions that are not bound to the cleavage site on the surface of the polyimide film.

The degreasing process, the etching process, the neutralization process, and the polarization process described above are pretreatment processes for performing the plating method, and the efficiency of the plating method which is subsequently performed through the above process can be improved.

Hereinafter, a first metal layer is formed on the polyimide film subjected to the pretreatment process by using an electroless plating method. In the following, the formation of a single layer of the first metal layer is disclosed by one electroless plating method, but two electroless plating methods may be performed to form a plurality of first metal layers.

More specifically, first, a catalyst addition process is performed on the polyimide film subjected to the pretreatment process. In the catalyst addition process, the polyimide film is immersed in the catalyst solution to adsorb palladium (Pd), which is a catalyst, on the surface of the polyimide film.

The catalyst solution that may be used in the catalyst addition process may be a solution obtained by diluting palladium chloride (PdCl ₂ ) and stannous chloride (SnCl ₂ ) in hydrochloric acid at a volume ratio of 1: 1.

If the reaction time is too short in the catalyst addition process, the adsorption rate of palladium or tin as a catalyst on the surface of the polyimide film may be low, and if the reaction time is too long, the surface of the polyimide film may be corroded, so that the reaction time is appropriately adjusted. .

Next, the polyimide film subjected to the catalyst addition process is immersed in the plating solution to plate the metal seed over the entire polyimide film.

As the plating solution, a copper sulfate plating solution prepared by mixing EDTA aqueous solution, caustic soda solution, formalin aqueous solution and copper sulfate aqueous solution, or nickel sulfate plating solution prepared by mixing sodium hypophosphite, sodium citrate, ammonia and nickel hexahydrate solution Can be used.

At this time, the plating solution may contain a small amount of a brightener component, a stabilizer component, etc. in order to maximize the metal properties. Such brighteners and stabilizers may enable recycling of the plating solution and long term storage.

When using a copper sulfate plating solution, the process of forming a metal seed may be carried out by immersing the catalyst-added polyimide film in a temperature range of 35 to 45 ℃ for 20 to 30 minutes without applying a current. In this way, plating without application of a current is called an electroless plating method.

When using a nickel sulfate plating solution, the process of forming the metal seed may be performed by immersing the catalyst-added polyimide film in a temperature range of 35 to 40 ℃ for 2 minutes.

The process of forming the first metal layer is a pre-process for plating the second metal layer later, the first metal layer may be carried out to a thickness of 0.02 to 0.2㎛, but is carried out enough to eliminate the unplated portion of the polyimide film can do.

Subsequently, the polyimide film having the first metal layer formed thereon is immersed in a plating solution and a current is applied to form a second metal layer.

More specifically, the polyimide film on which the first metal layer is formed is immersed in the plating solution, and a plating process is performed by applying a 2 A / dm 2 current for 30 minutes at a temperature range of 40 to 50 ° C. Prepare FPC or FCCL.

Here, the plating solution is stirred smoothly to minimize the uniformity of the concentration of the plating solution. Such plating conditions may be appropriately adjusted according to the thickness of the plating layer to be obtained. In this way, the plating method by applying current is distinguished from the above-mentioned electroless plating method and referred to as electrolytic plating method.

At this time, the plating solution that can be used may be commercially available Enthone OMI, noble metal, NMP and the like. Alternatively, a plating solution prepared by diluting a copper sulfate aqueous solution (CuSO ₄ -H ₂ O), sulfuric acid (H ₂ SO ₄ ), and hydrochloric acid (HCl) with water (ion-exchanged water) may be used. It may contain a small amount.

After visually observing the FPC or FCCL prepared through the above-described process to evaluate the degree of plating, the flexible film according to an embodiment of the present invention can be completed.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above may be modified in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 illustrates a display device according to an exemplary embodiment of the present invention.

2A and 2B are cross sectional views taken along the line II ′ of FIG. 1;

Figure 3a is a view showing a flexible film according to an embodiment of the present invention, Figures 3b to 3d is a cross-sectional view taken along line II 'of Figure 3a.

4A-4C are cross-sectional views taken along the line II ′ of FIG. 3A;

Claims (14)

Display panel; And It includes a flexible film connected to the pad portion of the display panel, One end of the flexible film is bent upward or downward with respect to the pad portion. The method of claim 1, The flexible film is a display device having a distance bent upwards based on the pad portion 9mm or less. The method of claim 1, The flexible film has a distance bent downward based on the pad portion 2mm or less. The method of claim 1, The flexible film, An insulating film including one or more holes; And A first metal layer and a second metal layer on the insulating film; The insulating film includes a first surface that is an inner circumferential surface of the hole, a second surface that is an upper surface of the insulating film, and a third surface that is a lower surface of the insulating film, The first metal layer and the second metal layer are disposed on at least one of the second and third surfaces and on the first surface. The method of claim 4, wherein The hole diameter is 30 to 1000㎛ display device. The method of claim 4, wherein The thickness of the first metal layer is 0.02 to 0.2㎛. The method of claim 4, wherein The first metal layer is an electroless plating method. The method of claim 4, wherein And the second metal layer is formed of an electroplating method. The method of claim 4, wherein The first metal layer is any one selected from the group consisting of chromium (Cr), gold (Au), copper (Cu), and nickel (Ni). The method of claim 4, wherein The second metal layer is made of gold (Au) or copper (Cu). The method of claim 4, wherein The insulating film is any one selected from the group consisting of polyester, polyimide, liquid crystal polymer and fluororesin film. The method of claim 4, wherein The angle formed by the first surface and the second surface is an obtuse angle. The method of claim 4, wherein The angle formed by the first surface and the second surface is an acute angle. The method of claim 4, wherein The angle formed by the first surface and the second surface is a right angle.

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