KR20090101954A - Composition and light-emitting element comprising the composition - Google Patents
Composition and light-emitting element comprising the compositionInfo
- Publication number
- KR20090101954A KR20090101954A KR1020097015589A KR20097015589A KR20090101954A KR 20090101954 A KR20090101954 A KR 20090101954A KR 1020097015589 A KR1020097015589 A KR 1020097015589A KR 20097015589 A KR20097015589 A KR 20097015589A KR 20090101954 A KR20090101954 A KR 20090101954A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- compound
- pyrazine ring
- ring structure
- formula
- Prior art date
Links
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- 125000001424 substituent group Chemical group 0.000 claims description 36
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- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
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- 125000005581 pyrene group Chemical group 0.000 description 1
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- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
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- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000005579 tetracene group Chemical group 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D241/00—Heterocyclic compounds containing 1,4-diazine or hydrogenated 1,4-diazine rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
- C08G73/0633—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with only two nitrogen atoms in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3442—Heterocyclic compounds having nitrogen in the ring having two nitrogen atoms in the ring
- C08K5/3462—Six-membered rings
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/11—Homopolymers
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/12—Copolymers
- C08G2261/124—Copolymers alternating
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/312—Non-condensed aromatic systems, e.g. benzene
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- C—CHEMISTRY; METALLURGY
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Abstract
Description
본 발명은 피라진환 구조를 갖는 화합물과 인광 발광성 화합물을 포함하는 조성물, 및 상기 조성물을 포함하는 발광 소자에 관한 것이다.The present invention relates to a composition comprising a compound having a pyrazine ring structure and a phosphorescent compound, and a light emitting device comprising the composition.
발광 소자의 발광층에 이용하는 발광 재료로서, 삼중항 여기 상태로부터의 발광을 나타내는 화합물(이하, 「인광 발광성 화합물」이라는 경우가 있음)을 발광층에 이용한 소자는 발광 효율이 높은 것이 알려져 있다. 인광 발광성 화합물을 발광층에 이용하는 경우, 통상은 상기 화합물을 매트릭스에 첨가하여 이루어지는 조성물을 발광 재료로서 이용한다. 상기 매트릭스로서는 도포에 의해서 박막을 형성할 수 있다는 점에서, 폴리비닐카르바졸과 같은 고분자를 바람직하게 사용할 수 있다(특허 문헌 1). 그러나, 이러한 고분자는 최저 비점 분자 궤도(이하, 「LUMO」라는 경우가 있음)가 높기 때문에, 전자를 주입하기 어렵다는 문제가 있다.As a luminescent material used for the light emitting layer of a light emitting element, it is known that the element which used the compound which shows light emission from a triplet excited state (henceforth a "phosphorescent compound") for a light emitting layer is high in luminous efficiency. When using a phosphorescent compound for a light emitting layer, the composition which adds the said compound to a matrix is normally used as a luminescent material. As said matrix, since a thin film can be formed by application | coating, a polymer like polyvinylcarbazole can be used preferably (patent document 1). However, such a polymer has a problem that it is difficult to inject electrons because of its high minimum boiling point molecular trajectory (hereinafter sometimes referred to as "LUMO").
한편, 폴리플루오렌 등의 공액계 고분자는 LUMO가 낮기 때문에, 이것을 매트릭스로서 이용하면, 비교적 용이하게 전자를 주입할 수 있다. 그러나, 이러한 공액계 고분자는 최저 삼중항 여기 에너지가 작기 때문에, 특히 녹색보다도 단파장 발광을 위한 매트릭스로서의 사용에는 알맞지 않고, 예를 들면 공액계 고분자인 폴리플루오렌과 삼중항 발광 화합물을 포함하는 발광 재료는 발광 효율이 낮다(특허 문헌 2, 비특허 문헌 1).On the other hand, conjugated polymers such as polyfluorene have a low LUMO, and thus, when used as a matrix, electrons can be injected relatively easily. However, since the lowest triplet excitation energy is low, such conjugated polymers are not suitable for use as a matrix for shorter wavelength light emission than green, especially, for example, a light emitting material containing polyfluorene and triplet light emitting compounds, which are conjugated polymers. Has low luminous efficiency (Patent Document 2, Non-Patent Document 1).
특허 문헌 1: 일본 특허 공개 제2002-50483호 공보Patent Document 1: Japanese Patent Application Laid-Open No. 2002-50483
특허 문헌 2: 일본 특허 공개 제2002-241455호 공보Patent Document 2: Japanese Patent Application Laid-Open No. 2002-241455
비특허 문헌 1: APPLIED PHYSICS LETTERS, 80, 13, 2308(2002) Non Patent Literature 1: APPLIED PHYSICS LETTERS, 80, 13, 2308 (2002)
<발명의 개시><Start of invention>
<발명이 해결하고자 하는 과제>Problems to be Solved by the Invention
따라서, 본 발명의 목적은 발광 소자 등의 제조에 이용한 경우, 발광 효율이 우수한 발광 재료를 제공하는 데에 있다.Accordingly, an object of the present invention is to provide a light emitting material having excellent luminous efficiency when used in the manufacture of light emitting devices and the like.
<과제를 해결하기 위한 수단>Means for solving the problem
본 발명자들은 예의 검토를 거듭한 결과, 피라진환 구조를 갖는 화합물과 인광 발광성 화합물을 포함하는 조성물이 상술한 문제를 해결하는 것을 발견하여, 본 발명을 완성하기에 이르렀다.MEANS TO SOLVE THE PROBLEM As a result of earnestly examining, the present inventors discovered that the composition containing the pyrazine ring structure and the phosphorescent compound solved the problem mentioned above, and came to complete this invention.
즉, 본 발명은 첫째로, 피라진환 구조를 갖는 화합물과 인광 발광성 화합물을 포함하는 조성물을 제공한다.That is, the present invention firstly provides a composition comprising a compound having a pyrazine ring structure and a phosphorescent compound.
본 발명은 둘째로, 상기 인광 발광성 화합물의 잔기와 상기 피라진환 구조를 갖는 고분자를 제공한다.Secondly, the present invention provides a polymer having the residue of the phosphorescent compound and the pyrazine ring structure.
본 발명은 셋째로, 상기 조성물 또는 상기 고분자를 포함하는 발광성 박막, 유기 반도체 박막 및 발광 소자를 제공한다.The present invention provides a light emitting thin film, an organic semiconductor thin film and a light emitting device including the composition or the polymer.
본 발명은 넷째로, 상기 발광 소자를 구비한 면상 광원, 세그멘트 표시 장치 및 도트 매트릭스 표시 장치, 상기 발광 소자를 구비한 조명, 및 상기 발광 소자를 백 라이트로서 구비한 액정 표시 장치를 제공한다.Fourthly, the present invention provides a planar light source including the light emitting element, a segment display device and a dot matrix display device, illumination provided with the light emitting element, and a liquid crystal display device including the light emitting element as a backlight.
<발명의 효과>Effect of the Invention
본 발명의 조성물 등은 발광 효율이 높다. 따라서, 본 발명의 조성물 등을 발광 소자 등의 제조에 이용한 경우, 발광 효율이 우수한 발광 소자가 얻어진다. 또한, 본 발명의 조성물 등은 단파장의 녹색 또는 청색의 발광에 있어서, 비교적 우수한 발광성을 갖는다. 이것은 본 발명의 조성물에 포함되는 화합물, 본 발명의 고분자의 LUMO가 낮기 때문에, 비교적 전자를 주입하기 쉽고, 또한 최저 삼중항 여기 에너지가 크기 때문이라고 생각된다.The composition of the present invention and the like have high luminous efficiency. Therefore, when the composition etc. of this invention are used for manufacture of light emitting elements, etc., the light emitting element excellent in luminous efficiency is obtained. In addition, the composition and the like of the present invention have relatively excellent luminescence in short wavelength green or blue light emission. This is considered to be because the compound contained in the composition of the present invention and the LUMO of the polymer of the present invention are low, so that electrons are relatively easy to be injected and the minimum triplet excitation energy is large.
<발명을 실시하기 위한 최선의 형태>Best Mode for Carrying Out the Invention
이하, 본 발명에 대해서 상세히 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail.
<조성물><Composition>
본 발명의 조성물은 피라진환 구조를 갖는 화합물과 인광 발광성 화합물을 포함하는 것이다. 상기 피라진환 구조란, 치환기를 가질 수도 있는 피라진으로부터 1 내지 4개의 수소 원자를 제거하여 이루어지는 기를 의미한다.The composition of the present invention contains a compound having a pyrazine ring structure and a phosphorescent compound. The said pyrazine ring structure means the group formed by removing 1-4 hydrogen atoms from the pyrazine which may have a substituent.
상기 피라진환 구조로서는, 예를 들면 하기 화학식 1 내지 3, 5 내지 7로 표시되는 구조, 후술하는 A-1, A-2로 표시되는 구조를 들 수 있다.As said pyrazine ring structure, the structure represented by the following general formula (1)-(3) and (5)-7, the structure represented by A-1, A-2 mentioned later, are mentioned, for example.
상기 피라진환 구조를 갖는 화합물이 하기 화학식 1 내지 3, 5 내지 7로 표시되는 피라진환 구조를 갖는 고분자인 경우에는 하기 피라진환 구조를 주쇄 및/또는 측쇄에 갖는 고분자 화합물인 것이 바람직하다. 또한, 1분자 중에 갖는 상기 피라진환 구조는 적어도 1종이다.When the compound having a pyrazine ring structure is a polymer having a pyrazine ring structure represented by the following Chemical Formulas 1 to 3, 5 to 7, it is preferable that the compound is a polymer compound having the following pyrazine ring structure in the main chain and / or the side chain. In addition, the said pyrazine ring structure which has in 1 molecule is at least 1 sort (s).
(식 중, R 및 R1은 각각 독립적으로 수소 원자 또는 1가의 기를 나타내고, 복수 존재하는 R 및 R1은 동일하거나 상이할 수 있음)(Wherein R and R 1 each independently represent a hydrogen atom or a monovalent group, and a plurality of R and R 1 may be the same or different)
상기 화학식 1 내지 3, 5, 6 중, R 및 R1은 각각 독립적으로 수소 원자 또는 1가의 기를 나타내고, 바람직하게는 복수 존재하는 R(또는 R1)의 1개 이상이 1가의 기이고, 보다 바람직하게는 복수 존재하는 R(또는 R1)의 전부가 1가의 기이다.In the formulas (1) to (3), (5) and (6), R and R 1 each independently represent a hydrogen atom or a monovalent group, and preferably one or more of R (or R 1 ) present in plural numbers is a monovalent group, and preferably not all of the plurality of existing R (or R 1) to a monovalent group.
상기 1가의 기로서는, 예를 들면 할로겐 원자, 알킬기, 알킬옥시기, 알킬티오기, 치환기를 가질 수도 있는 아릴기, 아릴옥시기, 아릴티오기, 아릴알킬기, 아릴알킬옥시기, 아릴알킬티오기, 아실기, 아실옥시기, 아미드기, 산이미드기, 이민 잔기, 치환 아미노기, 치환 실릴기, 치환 실릴옥시기, 치환 실릴티오기, 치환 실릴아미노기, 치환기를 가질 수도 있는 1가의 복소환기, 헤테로아릴옥시기, 헤테로아릴티오기, 아릴알케닐기, 아릴에티닐기, 치환 카르복실기, 시아노기 등을 들 수 있으며, 바람직하게는 알킬기, 알콕시기, 치환기를 가질 수도 있는 아릴기, 치환기를 가질 수도 있는 1가의 복소환기이다. 또한, N가의 복소환기(N은 1 또는 2)란, 복소환식 화합물로부터 N개의 수소 원자를 제거하여 이루어지는 것이다. 또한, 1가의 복소환기로서는 1가의 방향족 복소환기가 바람직하다.As said monovalent group, For example, a halogen atom, an alkyl group, an alkyloxy group, an alkylthio group, the aryl group which may have a substituent, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkyloxy group, an arylalkylthio group Monovalent heterocyclic group which may have an acyl group, an acyloxy group, an amide group, an acid imide group, an imine residue, a substituted amino group, a substituted silyl group, a substituted silyloxy group, a substituted silylthio group, a substituted silylamino group, and a substituent Aryloxy group, heteroarylthio group, aryl alkenyl group, arylethynyl group, substituted carboxyl group, cyano group, etc. are mentioned, Preferably an alkyl group, an alkoxy group, an aryl group which may have a substituent, and may have a substituent It is a monovalent heterocyclic group. In addition, an N-valent heterocyclic group (N is 1 or 2) is formed by removing N hydrogen atoms from a heterocyclic compound. Moreover, as monovalent heterocyclic group, monovalent aromatic heterocyclic group is preferable.
상기 화학식 1 내지 3, 5, 6으로 표시되는 피라진환 구조가 결합손의 위치에서, 치환기를 가질 수도 있는 아릴기, 치환기를 가질 수도 있는 1가의 복소환기, 치환기를 가질 수도 있는 아릴렌기, 치환기를 가질 수도 있는 2가의 복소환기 등의 환 구조와 결합하고 있는 부분 구조에 있어서는 상기 화학식 1 내지 3, 5, 6 중, 상기 R의 적어도 1개가 수소 원자 이외의 원자의 총수가 3 이상인 1가의 기인 것이 바람직하고, 5 이상인 1가의 기인 것이 보다 바람직하고, 7 이상인 1가의 기인 것이 더욱 바람직하고, 10 이상인 1가의 기인 것이 특히 바람직하다.The pyrazine ring structure represented by the above formulas (1) to (3), (5), (6) has a substituent at the position of the bond, an aryl group which may have a substituent, a monovalent heterocyclic group which may have a substituent, an arylene group which may have a substituent, and a substituent In the partial structure which couple | bonds with ring structures, such as a bivalent heterocyclic group which may have, in the said Formulas 1-3, 5, 6, at least 1 of said R is a monovalent group whose total number of atoms other than a hydrogen atom is 3 or more. It is preferable, it is more preferable that it is a monovalent group which is 5 or more, It is still more preferable that the monovalent group which is 7 or more, It is especially preferable that the monovalent group which is 10 or more.
또한, R 및 R1의 적어도 한쪽이 알킬기, 알콕시기, 치환기를 가질 수도 있는 페닐기, 또는 치환기를 가질 수도 있는 헤테로아릴기인 것도 바람직하고, R의 1개 이상이 알킬기, 알콕시기, 치환기를 가질 수도 있는 페닐기, 또는 치환기를 가질 수도 있는 헤테로아릴기인 것도 바람직하다.It is also preferable that at least one of R and R 1 be an alkyl group, an alkoxy group, a phenyl group which may have a substituent, or a heteroaryl group which may have a substituent, and one or more of R may have an alkyl group, an alkoxy group or a substituent. It is also preferable that it is a phenyl group which exists, or the heteroaryl group which may have a substituent.
상기 피라진환 구조를 갖는 화합물로서는 하기 화학식 A-1 또는 A-2로 표시되는 화합물의 잔기를 갖는 화합물도 들 수 있다. 또한, 1분자 중에 갖는 상기 피라진환 구조는 적어도 1종이다.As a compound which has the said pyrazine ring structure, the compound which has a residue of the compound represented by following General formula A-1 or A-2 is also mentioned. In addition, the said pyrazine ring structure which has in 1 molecule is at least 1 sort (s).
<화학식 A-1><Formula A-1>
<화학식 A-2><Formula A-2>
(식 중, Y1은 -C(Ra)(Rb)-, -C(=O)-, -N(Rc)-, -O-, -Si(Rd)(Re)-, -P(Rf)-, -S-, -S(=O)2-를 나타내고, n은 0 내지 5의 정수이고, Ar1은 치환기를 가질 수도 있는 1가의 아릴기 또는 치환기를 가질 수도 있는 1가의 복소환기를 나타내고, Y1이 복수 존재하는 경우에는 이들은 동일하거나 상이할 수 있고, Ra 내지 Rf는 각각 독립적으로 수소 원자 또는 1가의 기를 나타내고, R은 상기와 동일 의미를 갖고, 복수 존재하는 R은 동일하거나 상이할 수 있음)Wherein Y 1 is -C (R a ) (R b )-, -C (= O)-, -N (R c )-, -O-, -Si (R d ) (R e )- , -P (R f )-, -S-, -S (= O) 2- , n is an integer of 0 to 5, and Ar 1 may have a monovalent aryl group or substituent which may have a substituent A monovalent heterocyclic group which is present, and in the case where a plurality of Y 1 's are present, they may be the same or different, and R a to R f each independently represent a hydrogen atom or a monovalent group, and R has the same meaning as described above, Plural R's may be the same or different)
Ra 내지 Rf로 표시되는 1가의 기로서는 알킬기, 알콕시기, 알킬티오기, 아릴기, 아릴옥시기, 아릴티오기, 아릴알킬기, 아릴알콕시기, 아릴알킬티오기, 아릴알케닐기, 아릴알키닐기, 아미노기, 치환 아미노기, 실릴기, 치환 실릴기, 실릴옥시기, 치환 실릴옥시기, 1가의 복소환기, 할로겐 원자를 들 수 있다.Examples of the monovalent group represented by R a to R f are alkyl group, alkoxy group, alkylthio group, aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkoxy group, arylalkylthio group, arylalkenyl group, arylalki And a silyl group, an amino group, a substituted amino group, a silyl group, a substituted silyl group, a silyloxy group, a substituted silyloxy group, a monovalent heterocyclic group, and a halogen atom.
또한, 발광 효율 측면에서는 상기 피라진환 구조를 갖는 화합물은 하기 화학식 A-3으로 표시되는 화합물의 잔기 이외의 피라진환 구조를 갖는 것이 바람직하다.In addition, in view of luminous efficiency, the compound having the pyrazine ring structure preferably has a pyrazine ring structure other than the residue of the compound represented by the following formula (A-3).
<화학식 A-3><Formula A-3>
(식 중, Z환은 탄소 원자, Z1 및 Z2를 포함하는 환상 구조이고, Z1 및 Z2는 각각 독립적으로 -C(H)= 또는 -N=을 나타냄)(Wherein Z ring is a cyclic structure containing a carbon atom, Z 1 and Z 2 , and Z 1 and Z 2 each independently represent —C (H) = or —N =)
상기 화학식 A-3 중, 상기 환상 구조로서는 치환기를 가질 수도 있는 방향환, 치환기를 가질 수도 있는 비방향환을 들 수 있고, 구체적으로는 벤젠환, 복소환, 지환식 탄화수소환, 이들 환이 복수 축합하여 이루어지는 환, 이들 환의 수소 원자의 일부가 치환된 것 등을 들 수 있다.In said Formula (A-3), the said cyclic structure includes the aromatic ring which may have a substituent, and the non-aromatic ring which may have a substituent, Specifically, a benzene ring, a heterocyclic ring, an alicyclic hydrocarbon ring, and these rings are condensed in multiple numbers The ring formed, the thing by which some hydrogen atoms of these rings were substituted, etc. are mentioned.
상기 화학식 A-1 내지 A-3으로 표시되는 화합물의 잔기란, 상기 화합물에 있어서의 수소 원자의 일부 또는 전부를 제거하여 이루어지는 기를 의미한다.The residue of the compound represented by the formulas (A-1) to (A-3) means a group formed by removing part or all of the hydrogen atoms in the compound.
상기 피라진환 구조를 갖는 화합물은 그 밖의 부분 구조를 포함하고 있을 수 있다. 그 밖의 부분 구조의 종류는 그것이 말단에 존재하는지 아닌지에 따라서 상이하다. 다른 부분 구조가 말단에 존재하는 경우에는, 상기 다른 부분 구조는 안정된 1가의 기이지만, 합성이 용이함 등의 측면에서, 상기 R 및 R1에 포함되는 1가의 치환기 또는 수소 원자가 바람직하다. 다른 부분 구조가 말단에 존재하지 않는 경우에는, 상기 다른 부분 구조는 안정된 다가의 기이지만, LUMO의 에너지 레벨 면에서 공액하는 성질의 다가의 기가 바람직하다. 이러한 기로서, 구체적으로는 2가의 방향족기, 3가의 방향족기를 들 수 있다. 여기서 방향족기란, 방향족성을 나타내는 유기 화합물로부터 유도되는 기이다. 그와 같은 방향족기로서는 페닐기, 나프틸기, 안트라세닐기, 피리딜기, 퀴놀릴기, 이소퀴놀릴기 등을 들 수 있다.The compound which has the said pyrazine ring structure may contain the other partial structure. The kind of other substructures differs depending on whether they are present at the ends or not. In the case where other partial structures are present at the terminal, the other partial structures are stable monovalent groups, but in view of ease of synthesis and the like, monovalent substituents or hydrogen atoms contained in the R and R 1 are preferable. When no other substructure is present at the terminal, the other substructure is a stable multivalent group, but a multivalent group having a property of conjugation in terms of the energy level of LUMO is preferable. As such a group, a bivalent aromatic group and a trivalent aromatic group are mentioned specifically ,. An aromatic group is group derived from the organic compound which shows aromaticity here. As such an aromatic group, a phenyl group, a naphthyl group, anthracenyl group, a pyridyl group, a quinolyl group, an isoquinolyl group, etc. are mentioned.
상기 피라진환 구조를 갖는 화합물이 고분자인 경우에는 상기 화합물에 포함되어 있을 수도 있는 바람직한 다른 부분 구조의 하나로서, 하기 화학식 4로 표시되는 구조를 들 수 있다.When the compound having a pyrazine ring structure is a polymer, a structure represented by the following formula (4) may be mentioned as one of the other preferable partial structures which may be included in the compound.
상기 화학식 4로 표시되는 구조는 알킬기, 알콕시기, 알킬티오기, 아릴기, 아릴옥시기, 아릴티오기, 아릴알킬기, 아릴알콕시기, 아릴알킬티오기, 아릴알케닐기, 아릴알키닐기, 아미노기, 치환 아미노기, 실릴기, 치환 실릴기, 할로겐 원자, 아실기, 아실옥시기, 이민 잔기, 아미드기, 산이미드기, 1가의 복소환기, 카르복실기, 치환 카르복실기 및 시아노기로 이루어지는 군에서 선택되는 치환기를 가질 수도 있다.The structure represented by the formula (4) is an alkyl group, alkoxy group, alkylthio group, aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkoxy group, arylalkylthio group, arylalkenyl group, arylalkynyl group, amino group, A substituent selected from the group consisting of a substituted amino group, silyl group, substituted silyl group, halogen atom, acyl group, acyloxy group, imine residue, amide group, acid imide group, monovalent heterocyclic group, carboxyl group, substituted carboxyl group and cyano group May have
상기 화학식 4 중, P환 및 Q환은 각각 독립적으로 방향환을 나타내지만, P환은 존재하거나 하지 않을 수도 있다. 2개의 결합손은 P환이 존재하는 경우에는 각각 P환 또는 Q환 상에 존재하고, P환이 존재하지 않는 경우에는 각각 Y를 포함하는 5원환 또는 6원환 상 또는 Q환 상에 존재한다. 또한, 상기 P환, Q환, Y를 포함하는 5원환 또는 6원환은 그의 환 상에 알킬기, 알콕시기, 알킬티오기, 아릴기, 아릴옥시기, 아릴티오기, 아릴알킬기, 아릴알콕시기, 아릴알킬티오기, 아릴알케닐기, 아릴알키닐기, 아미노기, 치환 아미노기, 실릴기, 치환 실릴기, 할로겐 원자, 아실기, 아실옥시기, 이민 잔기, 아미드기, 산이미드기, 1가의 복소환기, 카르복실기, 치환 카르복실기 및 시아노기로 이루어지는 군에서 선택되는 치환기를 가질 수도 있다. Y는 -O-, -S-, -Se-, -B(R1)-, -Si(R2)(R3)-, -P(R4)-, -PR5(=O)-, -C(R6)(R7)-, -N(R8)-, -C(R9)(R10)-C(R11)(R12)-, -O-C(R13)(R14)-, -S-C(R15)(R16)-, -N-C(R17)(R18)-, -Si(R19)(R20)-C(R21)(R22)-, -Si(R23)(R24)-Si(R25)(R26)-, -C(R27)=C(R28)-, -N=C(R29)- 또는 -Si(R30)=C(R31)-를 나타낸다. 여기서, R1 내지 R31은 각각 독립적으로 수소 원자, 알킬기, 알콕시기, 알킬티오기, 아릴기, 아릴옥시기, 아릴티오기, 아릴알킬기, 아릴알콕시기, 아릴알킬티오기, 아릴알케닐기, 아릴알키닐기, 아미노기, 치환 아미노기, 실릴기, 치환 실릴기, 실릴옥시기, 치환 실릴옥시기, 1가의 복소환기 또는 할로겐 원자를 나타낸다. 이 중에서는 알킬기, 알콕시기, 알킬티오기, 아릴기, 아릴옥시기, 아릴티오기, 아릴알킬기, 아릴알콕시기, 1가의 복소환기가 바람직하고, 알킬기, 알콕시기, 아릴기, 1가의 복소환기가 보다 바람직하고, 알킬기, 아릴기가 특히 바람직하다.In Formula 4, the P ring and the Q ring each independently represent an aromatic ring, but the P ring may or may not be present. Two bonds are present on the P ring or Q ring, respectively, when P ring is present, and on the 5- or 6-membered ring or Q ring containing Y, respectively, when P ring is not present. In addition, the 5- or 6-membered ring containing the P ring, Q ring, Y is an alkyl group, alkoxy group, alkylthio group, aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkoxy group, Arylalkylthio group, arylalkenyl group, arylalkynyl group, amino group, substituted amino group, silyl group, substituted silyl group, halogen atom, acyl group, acyloxy group, imine residue, amide group, acid imide group, monovalent heterocyclic group, It may have a substituent selected from the group consisting of a carboxyl group, a substituted carboxyl group and a cyano group. Y is -O-, -S-, -Se-, -B (R 1 )-, -Si (R 2 ) (R 3 )-, -P (R 4 )-, -PR 5 (= O)- , -C (R 6 ) (R 7 )-, -N (R 8 )-, -C (R 9 ) (R 10 ) -C (R 11 ) (R 12 )-, -OC (R 13 ) ( R 14 )-, -SC (R 15 ) (R 16 )-, -NC (R 17 ) (R 18 )-, -Si (R 19 ) (R 20 ) -C (R 21 ) (R 22 )- , -Si (R 23 ) (R 24 ) -Si (R 25 ) (R 26 )-, -C (R 27 ) = C (R 28 )-, -N = C (R 29 )-or -Si ( R 30 ) = C (R 31 )-. R 1 to R 31 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, an arylalkenyl group, An aryl alkynyl group, an amino group, a substituted amino group, a silyl group, a substituted silyl group, a silyloxy group, a substituted silyloxy group, a monovalent heterocyclic group, or a halogen atom is shown. In this, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, and a monovalent heterocyclic group are preferable, and an alkyl group, an alkoxy group, an aryl group, and a monovalent heterocyclic group Is more preferable, and an alkyl group and an aryl group are especially preferable.
상기 화학식 4로 표시되는 구조로서는 하기 화학식 (4-1), (4-2) 또는 (4-3)으로 표시되는 구조, 및 하기 화학식 (4-4) 또는 (4-5)로 표시되는 구조를 들 수 있다. 상기 화학식 (4-4), (4-5) 중, Y는 탄소 원자, 질소 원자, 산소 원자 또는 황 원자인 것이 보다 높은 발광 효율을 얻는다는 점에서 바람직하다. As a structure represented by the said General formula (4), the structure represented by the following general formula (4-1), (4-2) or (4-3), and the structure represented by the following general formula (4-4) or (4-5) Can be mentioned. In the formulas (4-4) and (4-5), Y is preferably a carbon atom, a nitrogen atom, an oxygen atom or a sulfur atom in terms of obtaining a higher luminous efficiency.
(식 중, A환, B환, 및 C환은 각각 독립적으로 방향환을 나타내고, 화학식 (4-1), (4-2) 및 (4-3)은 각각 알킬기, 알콕시기, 알킬티오기, 아릴기, 아릴옥시기, 아릴티오기, 아릴알킬기, 아릴알콕시기, 아릴알킬티오기, 아릴알케닐기, 아릴알키닐기, 아미노기, 치환 아미노기, 실릴기, 치환 실릴기, 할로겐 원자, 아실기, 아실옥시기, 이민 잔기, 아미드기, 산이미드기, 1가의 복소환기, 카르복실기, 치환 카르복실기 및 시아노기로 이루어지는 군에서 선택되는 치환기를 가질 수도 있고, Y는 상기와 동일 의미를 나타냄)(In the formula, A ring, B ring, and C ring each independently represents an aromatic ring, and formulas (4-1), (4-2) and (4-3) are each an alkyl group, an alkoxy group, an alkylthio group, Aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkoxy group, arylalkylthio group, arylalkenyl group, arylalkynyl group, amino group, substituted amino group, silyl group, substituted silyl group, halogen atom, acyl group, acyl May have a substituent selected from the group consisting of an oxy group, an imine residue, an amide group, an acid imide group, a monovalent heterocyclic group, a carboxyl group, a substituted carboxyl group, and a cyano group, and Y represents the same meaning as above)
(식 중, D환, E환, F환 및 G환은 각각 독립적으로 알킬기, 알콕시기, 알킬티오기, 아릴기, 아릴옥시기, 아릴티오기, 아릴알킬기, 아릴알콕시기, 아릴알킬티오기, 아릴알케닐기, 아릴알키닐기, 아미노기, 치환 아미노기, 실릴기, 치환 실릴기, 할로겐 원자, 아실기, 아실옥시기, 이민 잔기, 아미드기, 산이미드기, 1가의 복소환기, 카르복실기, 치환 카르복실기 및 시아노기로 이루어지는 군에서 선택되는 치환기를 가질 수도 있는 방향환을 나타내고, Y는 상기와 동일 의미를 나타냄)(Wherein, D ring, E ring, F ring and G ring are each independently an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, Aryl alkenyl group, aryl alkynyl group, amino group, substituted amino group, silyl group, substituted silyl group, halogen atom, acyl group, acyloxy group, imine residue, amide group, acid imide group, monovalent heterocyclic group, carboxyl group, substituted carboxyl group and Represents an aromatic ring which may have a substituent selected from the group consisting of a cyano group, and Y represents the same meaning as above)
상기 화학식 (4-1), (4-2), (4-3), (4-4) 및 (4-5) 중, A환, B환, C환, D환, E환, F환 및 G환은 각각 독립적으로 방향환을 나타낸다. 상기 방향환으로서는 벤젠환, 나프탈렌환, 안트라센환, 테트라센환, 펜타센환, 피렌환, 페난트렌환 등의 방향족 탄화수소환; 피리딘환, 비피리딘환, 페난트롤린환, 퀴놀린환, 이소퀴놀린환, 티오펜환, 푸란환, 피롤환 등의 복소 방향환을 들 수 있다.In the above formulas (4-1), (4-2), (4-3), (4-4) and (4-5), A ring, B ring, C ring, D ring, E ring, F ring And the G ring each independently represent an aromatic ring. Examples of the aromatic ring include aromatic hydrocarbon rings such as benzene ring, naphthalene ring, anthracene ring, tetracene ring, pentacene ring, pyrene ring and phenanthrene ring; And heteroaromatic rings such as pyridine ring, bipyridine ring, phenanthroline ring, quinoline ring, isoquinoline ring, thiophene ring, furan ring and pyrrole ring.
상기 피라진환 구조를 갖는 화합물이 고분자인 경우에는 상기 화합물에 포함되어 있을 수도 있는 바람직한 다른 부분 구조의 하나로서, 이하의 화학식으로 표시되는 기를 들 수 있다.When the compound which has the said pyrazine ring structure is a polymer, group represented by the following general formula is mentioned as one of the other preferable partial structures which may be contained in the said compound.
(식 중, Ar6, Ar7, Ar8 및 Ar9는 각각 독립적으로 아릴렌기 또는 2가의 복소환기를 나타내고, Ar10, Ar11 및 Ar12는 각각 독립적으로 아릴기 또는 1가의 복소환기를 나타내고, Ar6, Ar7, Ar8, Ar9 및 Ar10은 치환기를 가질 수도 있고, x 및 y는 각각 독립적으로 0 또는 1이고, 0≤x+y≤1임)(In the formula, Ar 6 , Ar 7 , Ar 8 and Ar 9 each independently represent an arylene group or a divalent heterocyclic group, and Ar 10 , Ar 11 and Ar 12 each independently represent an aryl group or a monovalent heterocyclic group). , Ar 6 , Ar 7 , Ar 8 , Ar 9 and Ar 10 may have a substituent, and x and y are each independently 0 or 1, and 0 ≦ x + y ≦ 1)
본 발명에 있어서, 「고분자」는 동일 구조 단위(반복 단위)가 적어도 2개 이상 화합물 중에 존재하는 것을 의미한다. 상기 피라진환 구조를 갖는 화합물이 고분자인 경우, 상기 화합물의 폴리스티렌 환산의 중량 평균 분자량은 성막성 측면에서, 3×102 이상이 바람직하고, 3×102 내지 1×107이 보다 바람직하고, 1×103 내지 1×107이 더욱 바람직하고, 1×104 내지 1×107이 특히 바람직하다.In the present invention, "polymer" means that the same structural unit (repeated unit) is present in at least two or more compounds. In the case where the compound having the pyrazine ring structure is a polymer, the weight average molecular weight of the polystyrene conversion of the compound is preferably 3 × 10 2 or more, more preferably 3 × 10 2 to 1 × 10 7 from the viewpoint of film formability, 1 * 10 <3> -1 * 10 <7> is more preferable, and 1 * 10 <4> -1 * 10 <7> is especially preferable.
상기 피라진환 구조를 갖는 화합물은 넓은 발광 파장 영역에서 사용할 수 있지만, 상기 화합물의 최저 삼중항 여기 에너지(이하, 「T1 에너지」라고도 함)가 2.7 eV 이상인 것이 바람직하고, 2.8 eV 이상인 것이 보다 바람직하고, 2.9 eV 이상인 것이 더욱 바람직하고, 3.0 eV 이상인 것이 특히 바람직하고, 3.1 eV 이상인 것이 특히 바람직하다. 또한, 통상 상한은 5.0 eV이다.The pyrazole compound having jinhwan structure can be used in a wide emission wavelength range, and that the lowest triplet of the compounds herein (hereinafter also referred to as "T 1 energy") of energy less than 2.7 eV preferably, more preferably not less than 2.8 eV It is more preferable that it is 2.9 eV or more, It is especially preferable that it is 3.0 eV or more, It is especially preferable that it is 3.1 eV or more. In addition, an upper limit is 5.0 eV normally.
상기 피라진환 구조를 갖는 화합물의 최저 비점유 분자 궤도(LUMO)의 에너지 레벨은 LUMO의 에너지 레벨의 절대값이 2.1 eV 이상인 것이 바람직하고, 2.2 eV 이상인 것이 더욱 바람직하고, 2.3 eV 이상인 것이 보다 바람직하고, 2.4 eV 이상인 것이 특히 바람직하다. 또한, 통상 상한은 4.0 eV이다.As for the energy level of the lowest unoccupied molecular orbital (LUMO) of the compound which has the said pyrazine ring structure, it is preferable that the absolute value of the energy level of LUMO is 2.1 eV or more, It is more preferable that it is 2.2 eV or more, It is more preferable that it is 2.3 eV or more , 2.4 eV or more is particularly preferred. In addition, an upper limit is 4.0 eV normally.
본 명세서에 있어서, 상기 T1 에너지, LUMO의 에너지 레벨의 값은 계산 과학적 수법으로 산출한 값이다. 본 명세서에 있어서, 계산 과학적 수법으로서, 양자 화학 계산 프로그램 가우시안(Gaussian) 03을 이용하여, HF(하트리-폭; Hartree-Fock)법에 의해, 기저 상태의 구조 최적화를 행하고, 상기 최적화된 구조에 있어서, B3P86 레벨의 시간 의존 밀도 범함수법을 이용하여, T1 에너지, LUMO의 에너지 레벨의 값을 산출하였다. 그 때, 기저 함수로서 6-31g*을 이용하였다.In the present specification, the T 1 energy value of the energy level of the LUMO is a value calculated by calculating a scientific method. In the present specification, the structural optimization of the ground state is performed by the HF (Hartree-Fock) method using a quantum chemistry calculation program Gaussian 03 as a calculation scientific method, and the optimized structure. In the above, the values of the T 1 energy and the energy level of LUMO were calculated using the time dependent density functional method of the B3P86 level. At that time, 6-31 g * was used as a basis function.
상기 피라진환 구조를 갖는 화합물이 고분자인 경우이며, 상기 화합물을 구성하는 반복 단위가 1종류일 때에는 상기 단위를 A로 하면, 상기 화합물은 하기 화학식으로 표시된다.It is a case where the compound which has the said pyrazine ring structure is a polymer, and when there is one type of repeating unit which comprises the said compound, when the said unit is A, the said compound is represented by the following formula.
(식 중, n은 중합수를 나타냄)(Wherein n represents polymerization water)
여기서, n=1, 2 및 3의 구조에 대하여 LUMO의 에너지 레벨을 산출하고, 산출된 LUMO의 에너지 레벨을(1/n)의 함수로서 선형 근사한 경우의 n=∞의 값을 상기 화합물의 LUMO의 에너지 레벨로 정의한다. T1 에너지에 대해서도 동일하게 정의한다.Here, the energy level of LUMO is calculated for the structure of n = 1, 2 and 3, and the value of n = ∞ when linear approximation of the calculated energy level of LUMO as a function of (1 / n) is used as the LUMO of the compound. It is defined as the energy level of. The same applies to the T 1 energy.
상기 피라진환 구조를 갖는 화합물이 고분자인 경우이며, 상기 화합물을 구성하는 반복 단위가 복수 존재할 때에는, 존재하는 모든 경우 중에서 최저의 T1 에너지를 상기 화합물의 T1 에너지로 정의한다. LUMO의 에너지 레벨은 최저의 T1 에너지를 제공하는 구조에 있어서의 LUMO의 에너지 레벨로 정의한다.The pyrazole and a case where the compound having the structure jinhwan polymer, when present in multiple repeating units constituting the compound, and defines the existence of the lowest T 1 energy among all cases where a T 1 energy of the compound. The energy level of LUMO is defined as the energy level of LUMO in the structure providing the lowest T 1 energy.
상기 피라진환 구조를 갖는 화합물이 상기 화학식 1, 2, 3, 5, 6 또는 7로 표시되는 피라진환 구조를 포함하는 경우에는, 상기 피라진환 구조에 인접하는 적어도 2개의 π 공액 전자를 갖는 부분 구조가 존재하는 것이 바람직하다. 상기 화학식 1, 2, 3, 5, 6 또는 7로 표시되는 피라진환 구조와, 상기 피라진환 구조에 인접하는 적어도 2개의 π 공액 전자를 갖는 (다른) 부분 구조와의 사이의 이면각은 통상 20° 이상이고, 바람직하게는 30° 이상, 보다 바람직하게는 40° 이상, 더욱 바람직하게는 50° 이상, 특히 바람직하게는 60° 이상, 특히 바람직하게는 70° 이상이다.When the compound having a pyrazine ring structure includes a pyrazine ring structure represented by Formula 1, 2, 3, 5, 6 or 7, the partial structure having at least two π conjugated electrons adjacent to the pyrazine ring structure Is preferably present. The backside angle between the pyrazine ring structure represented by the formula (1), (2), (3), (5), (6) or (7) and the (other) partial structure having at least two π conjugated electrons adjacent to the pyrazine ring structure is usually 20. It is at least °, preferably at least 30 °, more preferably at least 40 °, even more preferably at least 50 °, particularly preferably at least 60 °, particularly preferably at least 70 °.
여기서, 본 발명에 있어서의 이면각이란, 기저 상태에 있어서의 최적화 구조로부터 산출되는 각도를 의미한다. 이면각은 상기 화학식 1, 2, 3, 5, 6 또는 7로 표시되는 피라진환 구조에 있어서, 적어도 2개의 π 공액 전자를 갖는 부분 구조와의 결합 위치에 있는 탄소 원자 (a1)과 그것에 인접하는 탄소 원자 (a2), 및 상기 피라진환 구조와 결합하고 있는 구조의 결합 위치에 있는 원자 (a3)과 그것에 인접하는 원자 (a4)로 정의된다. 여기서, 원자의 조합 (a1, a2, a3, a4)가 복수 선택 가능한 경우에는 모든 경우에 대해서 이면각을 산출하여, 그 중에서 절대값이 최저인 값을 이면각으로 한다. 원자 (a3) 및 (a4)는 π 공액 전자를 갖는 원자이거나, 갖지 않는 원자일 수도 있지만, 바람직하게는 π 공액 전자를 갖는 원자이고, 보다 바람직하게는 탄소 원자, 질소 원자, 규소 원자, 인 원자이다. 본 명세서에 있어서는 계산 과학적 수법에 의해 요구되는 상기 구조의 기저 상태에 있어서의 최적화 구조(즉, 상기 구조의 생성 에너지가 최소가 되는 구조)로부터 산출한다.Here, the backside angle in this invention means the angle computed from the optimization structure in a ground state. The dihedral angle is adjacent to the carbon atom (a 1 ) at the bonding position with the partial structure having at least two π conjugated electrons in the pyrazine ring structure represented by the above formula (1), (2), (3), (5), (6) or (7). It is defined as a carbon atom (a 2), and the atom (a 4) adjacent said pyrazol jinhwan structure and the combination and atoms (a 3) in the coupled position of the structure in it. Here, when a plurality of combinations of atoms (a 1 , a 2 , a 3 , a 4 ) can be selected, the back angle is calculated for all cases, and the value having the lowest absolute value is the back angle. The atoms (a 3 ) and (a 4 ) may be atoms having π conjugated electrons or atoms which do not have, but are preferably atoms having π conjugated electrons, more preferably carbon atoms, nitrogen atoms, silicon atoms, Phosphorus atom. In this specification, it calculates from the optimization structure in the ground state of the said structure calculated | required by a calculation scientific method (namely, the structure in which the generation energy of the said structure becomes minimum).
상기 피라진환 구조를 갖는 화합물의 바람직한 것으로서는 반복 단위가 상기 화학식 1, 2, 3, 5, 6 또는 7로 표시되는 구조인 고분자나, 상기 화학식 1, 2, 3, 5, 6 또는 7로 표시되는 구조에 더하여, 방향환, 헤테로 원자를 함유하는 5원환 이상의 복소환, 방향족 아민, 및 상기 화학식 4로 표시되는 구조로부터 선택되는 구조 중 어느 것을 포함하는 고분자를 들 수 있다. 또한, 상기 피라진환 구조를 갖는 화합물로서는 이하의 화학식 (5-1) 내지 (5-26)으로 표시되는 고분자를 들 수 있다.Preferable examples of the compound having a pyrazine ring structure include a polymer having a repeating unit represented by the formula (1), (2), (3), (5), (6) or (7), or (1), (2), (3), (5), (6) or (7). In addition to the structure mentioned above, the polymer containing any of the structure chosen from an aromatic ring, the 5-membered or more heterocyclic ring containing a hetero atom, an aromatic amine, and the structure represented by the said General formula (4) is mentioned. Moreover, as a compound which has the said pyrazine ring structure, the polymer represented by the following general formula (5-1)-(5-26) is mentioned.
하기 화학식 (5-1) 내지 (5-26) 중, R은 수소 원자 또는 치환기를 나타낸다. R의 치환기로서는 할로겐 원자, 알킬기, 알킬옥시기, 알킬티오기, 아릴기, 아릴옥시기, 아릴티오기, 아릴알킬기, 아릴알킬옥시기, 아릴알킬티오기, 아실기, 아실옥시기, 아미드기, 산이미드기, 이민 잔기, 치환 아미노기, 치환 실릴기, 치환 실릴옥시기, 치환 실릴티오기, 치환 실릴아미노기, 1가의 복소환기, 헤테로아릴옥시기, 헤테로아릴티오기, 아릴알케닐기, 아릴에티닐기, 치환 카르복실기, 시아노기가 예시된다. 복수개의 R은 동일하거나 상이할 수 있다. R로서는 알킬기, 아릴기, 아릴알킬기, 1가의 복소환기가 보다 바람직하다.In the following formulas (5-1) to (5-26), R represents a hydrogen atom or a substituent. Substituents for R include halogen atom, alkyl group, alkyloxy group, alkylthio group, aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkyloxy group, arylalkylthio group, acyl group, acyloxy group, amide group , Acid imide groups, imine residues, substituted amino groups, substituted silyl groups, substituted silyloxy groups, substituted silylthio groups, substituted silylamino groups, monovalent heterocyclic groups, heteroaryloxy groups, heteroarylthio groups, aryl alkenyl groups, and aryl groups A tinyl group, a substituted carboxyl group, and a cyano group are illustrated. The plurality of Rs may be the same or different. As R, an alkyl group, an aryl group, an arylalkyl group, and a monovalent heterocyclic group are more preferable.
(식 중, n은 중합수를 나타내고, R은 상기와 동일 의미를 갖고, 복수 존재하는 R은 동일하거나 상이할 수 있음)(Wherein n represents a polymerization number, R has the same meaning as above, and a plurality of R's may be the same or different)
또한, 상기 피라진환 구조를 갖는 화합물의 구체적인 구조로서는 이하의 고분자를 들 수 있다.Moreover, the following polymers are mentioned as a specific structure of the compound which has the said pyrazine ring structure.
(식 중, n은 중합수를 나타냄)(Wherein n represents polymerization water)
상기 피라진환 구조를 갖는 화합물로서는 이하의 화합물도 들 수 있다.The following compounds are also mentioned as a compound which has the said pyrazine ring structure.
상기 인광 발광성 화합물로서는 삼중항 발광 착체 등의 공지된 것을 사용할 수 있다. 예를 들면, 종래부터 저분자계의 EL 발광성 재료로서 이용되어 온 것을 들 수 있다. 이들은 문헌 [Nature, (1998), 395, 151; Appl. Phys. Lett.(1999), 75(1), 4; Proc. SPIE-Int. Soc. Opt. Eng.(2001), 4105(Organic Light-Emitting Materials and Devices IV), 119; J. Am. Chem. Soc., (2001), 123, 4304; Appl. Phys. Lett., (1997), 71(18), 2596; Syn. Met., (1998), 94(1), 103; Syn. Met., (1999), 99(2), 1361; Adv. Mater., (1999), 11(10), 852; Inorg. Chem., (2003), 42, 8609; Inorg. Chem., (2004), 43, 6513; Journal of the SID 11/1, 161(2003); WO2002/066552; WO2004/020504; WO2004/020448] 등에 개시되어 있다. 그 중에서도, 금속 착체의 최고 점유 분자 궤도(HOMO)에 있어서의, 중심 금속의 최외피 d 궤도의 궤도 계수의 2승의 합이 전체 원자 궤도 계수의 2승의 합에 있어서 차지하는 비율이 1/3 이상인 것이 고발광 효율을 얻는 관점에서 바람직하다. 예를 들면, 중심 금속이 제6 주기에 속하는 전이 금속인 오르토메탈화 착체 등을 들 수 있다.As said phosphorescent compound, well-known things, such as a triplet light emitting complex, can be used. For example, what has conventionally been used as a low molecular EL luminescent material is mentioned. These are described in Nature, (1998), 395, 151; Appl. Phys. Lett. (1999), 75 (1), 4; Proc. SPIE-Int. Soc. Opt. Eng. (2001), 4105 (Organic Light-Emitting Materials and Devices IV), 119; J. Am. Chem. Soc., (2001), 123, 4304; Appl. Phys. Lett., (1997), 71 (18), 2596; Syn. Met., (1998), 94 (1), 103; Syn. Met., (1999), 99 (2), 1361; Adv. Mater., (1999), 11 (10), 852; Inorg. Chem., (2003), 42, 8609; Inorg. Chem., (2004), 43, 6513; Journal of the SID 11/1, 161 (2003); WO2002 / 066552; WO2004 / 020504; WO2004 / 020448 and the like. Among them, the ratio of the sum of the squares of the orbital coefficients of the outermost d orbits of the center metal in the highest occupied molecular orbital (HOMO) of the metal complex occupies in the sum of the squares of all atomic orbital coefficients is 1/3. The above is preferable from the viewpoint of obtaining high light emission efficiency. For example, an orthometallized complex whose center metal is a transition metal which belongs to a 6th period is mentioned.
상기 삼중항 발광 착체의 중심 금속으로서는 통상 원자 번호 50 이상의 원자로, 상기 착체에 스핀-궤도 상호 작용이 있고, 일중항 상태와 삼중항 상태 사이의 항사이 교차를 일으킬 수 있는 금속으로, 예를 들면 금, 백금, 이리듐, 오스뮴, 레늄, 텅스텐, 유로퓸, 테르븀, 툴륨, 디스프로슘, 사마륨, 프라세오디뮴, 가돌리늄, 이트리븀의 원자를 들 수 있지만, 바람직하게는 금, 백금, 이리듐, 오스뮴, 레늄, 텅스텐의 원자이고, 보다 바람직하게는 금, 백금, 이리듐, 오스뮴, 레늄의 원자이고, 더욱 바람직하게는 금, 백금, 이리듐, 레늄의 원자이고, 특히 바람직하게는 백금 및 이리듐의 원자이다.As the center metal of the triplet light emitting complex, a reactor having an atomic number of 50 or more, a metal having spin-orbit interaction with the complex and causing crossover between singlet and triplet states, for example, gold , Platinum, iridium, osmium, rhenium, tungsten, europium, terbium, thulium, dysprosium, samarium, praseodymium, gadolinium, yttrium, and the like, but preferably gold, platinum, iridium, osmium, rhenium, tungsten Atoms, more preferably atoms of gold, platinum, iridium, osmium and rhenium, still more preferably atoms of gold, platinum, iridium and rhenium, particularly preferably atoms of platinum and iridium.
상기 삼중항 발광 착체의 배위자로서는 8-퀴놀리놀 및 그의 유도체, 벤조퀴놀리놀 및 그의 유도체, 2-페닐-피리딘 및 그의 유도체 등을 들 수 있다.Examples of the ligand of the triplet light emitting complex include 8-quinolinol and derivatives thereof, benzoquinolinol and derivatives thereof, 2-phenyl-pyridine and derivatives thereof, and the like.
상기 인광 발광성 화합물은 용해성 측면에서, 알킬기, 알콕시기, 치환기를 가질 수도 있는 아릴기, 치환기를 가질 수도 있는 헤테로아릴기 등의 치환기를 갖는 화합물인 것이 바람직하다. 또한, 상기 치환기는 수소 원자를 제거한 원자의 총수가 3 이상인 것이 바람직하고, 총수가 5 이상인 것이 보다 바람직하고, 7 이상인 것이 더욱 바람직하고, 10 이상인 것이 특히 바람직하다. 또한, 상기 치환기는 각 배위자에 적어도 1개 이상 존재하는 것이 바람직하고, 상기 치환기의 종류는 배위자마다 동일하거나 상이할 수 있다.In view of solubility, the phosphorescent compound is preferably a compound having substituents such as an alkyl group, an alkoxy group, an aryl group which may have a substituent, and a heteroaryl group which may have a substituent. Moreover, it is preferable that the total number of the atoms which removed the hydrogen atom of the said substituent is 3 or more, It is more preferable that the total number is 5 or more, It is further more preferable that it is 7 or more, It is especially preferable that it is 10 or more. In addition, it is preferable that at least one substituent be present in each ligand, and the type of the substituent may be the same or different for each ligand.
상기 인광 발광성 화합물로서는 이하의 것을 들 수 있다.The following can be mentioned as said phosphorescent compound.
본 발명의 조성물 중에 있어서의 상기 인광 발광성 화합물의 양은 상기 피라진환 구조를 갖는 화합물의 양을 100 중량부로 하였을 때, 통상 0.01 내지 80 중량부이고, 바람직하게는 0.1 내지 30 중량부이고, 보다 바람직하게는 0.1 내지 15 중량부이고, 특히 바람직하게는 0.1 내지 10 중량부이다. 또한, 본 발명의 조성물에 있어서, 상기 피라진환 구조를 갖는 화합물, 상기 인광 발광성 화합물은 각각 1종 단독으로 이용하거나 2종 이상을 병용할 수도 있다.The amount of the phosphorescent compound in the composition of the present invention is usually 0.01 to 80 parts by weight, preferably 0.1 to 30 parts by weight, more preferably 100 parts by weight of the compound having the pyrazine ring structure. Is 0.1 to 15 parts by weight, particularly preferably 0.1 to 10 parts by weight. In the composition of the present invention, the compound having the pyrazine ring structure and the phosphorescent compound may be used alone or in combination of two or more.
본 발명의 조성물은 본 발명의 목적을 손상시키지 않는 범위에서, 상기 피라진환 구조를 갖는 화합물, 상기 인광 발광성 화합물 이외의 임의 성분을 포함하고 있을 수 있다. 이 임의 성분으로서는 정공 수송 재료, 전자 수송 재료, 산화 방지제 등을 들 수 있다.The composition of this invention may contain the arbitrary components other than the compound which has the said pyrazine ring structure, and the said phosphorescent compound in the range which does not impair the objective of this invention. As this arbitrary component, a hole transport material, an electron transport material, antioxidant, etc. are mentioned.
상기 정공 수송 재료로서는 지금까지 유기 EL 소자의 정공 수송 재료로서 공지된 방향족 아민, 카르바졸 유도체, 폴리파라페닐렌 유도체 등을 들 수 있다.Examples of the hole transport material include aromatic amines, carbazole derivatives, polyparaphenylene derivatives and the like which have been known as hole transport materials for organic EL devices.
상기 전자 수송 재료로서는 지금까지 유기 EL 소자의 전자 수송 재료로서 공지된 옥사디아졸 유도체, 안트라퀴노디메탄 및 그의 유도체, 벤조퀴논 및 그의 유도체, 나프토퀴논 및 그의 유도체, 안트라퀴논 및 그의 유도체, 테트라시아노안트라퀴노디메탄 및 그의 유도체, 플루오레논 유도체, 디페닐디시아노에틸렌 및 그의 유도체, 디페노퀴논 유도체, 및 8-히드록시퀴놀린 및 그의 유도체의 금속 착체를 들 수 있다.Examples of the electron transport material include oxadiazole derivatives, anthraquinomethane and derivatives thereof, benzoquinone and derivatives thereof, naphthoquinone and derivatives thereof, anthraquinone and derivatives thereof, tetra And cyanoanthraquinodimethane and derivatives thereof, fluorenone derivatives, diphenyldicyanoethylene and derivatives thereof, diphenoquinone derivatives, and metal complexes of 8-hydroxyquinoline and derivatives thereof.
본 발명의 조성물에 있어서, 상기 피라진환 구조를 갖는 고분자 또는 화합물의 최저 삼중항 여기 에너지(ETP)와 상기 인광 발광성 화합물의 최저 삼중항 여기 에너지(ETT)가 하기 화학 수학식을 만족시키는 것이 고발광 효율 측면에서 바람직하다.In the composition of the present invention, the highest triplet excitation energy (ETP) of the polymer or compound having the pyrazine ring structure and the lowest triplet excitation energy (ETT) of the phosphorescent compound satisfy the following chemical formula It is preferable in terms of efficiency.
본 발명의 발광성 박막은, 본 발명의 조성물을 포함하는 박막을 형성함으로써 얻어진다. 박막의 제조 방법으로서는 용액의 도포, 증착, 전사 등을 들 수 있다. 용액의 도포에는 스핀 코팅법, 캐스팅법, 마이크로 그라비아 코팅법, 그라비아 코팅법, 바 코팅법, 롤 코팅법, 와이버 바 코팅법, 침지 코팅법, 분무 코팅법, 스크린 인쇄법, 플렉스 인쇄법, 오프셋 인쇄법, 잉크젯 인쇄법 등의 도포법을 사용할 수 있다.The luminescent thin film of this invention is obtained by forming the thin film containing the composition of this invention. As a manufacturing method of a thin film, application | coating of a solution, vapor deposition, transfer, etc. are mentioned. Application of the solution includes spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, fiber coating, dip coating, spray coating, screen printing, flex printing, Coating methods, such as an offset printing method and an inkjet printing method, can be used.
용매는 조성물을 용해 또는 균일하게 분산시킬 수 있는 것이 바람직하다. 상기 용매로서는 염소계 용매(클로로포름, 염화메틸렌, 1,2-디클로로에탄, 1,1,2-트리클로로에탄, 클로로벤젠, o-디클로로벤젠 등), 에테르계 용매(테트라히드로푸란, 디옥산 등), 방향족 탄화수소계 용매(톨루엔, 크실렌 등), 지방족 탄화수소계 용매(시클로헥산, 메틸시클로헥산, n-펜탄, n-헥산, n-헵탄, n-옥탄, n-노난, n-데칸 등), 케톤계 용매(아세톤, 메틸에틸케톤, 시클로헥사논 등), 에스테르계 용매(아세트산에틸, 아세트산부틸, 에틸셀로솔브아세테이트 등), 다가 알코올 및 그의 유도체(에틸렌글리콜, 에틸렌글리콜모노부틸에테르, 에틸렌글리콜모노에틸에테르, 에틸렌글리콜모노메틸에테르, 디메톡시에탄, 프로필렌글리콜, 디에톡시메탄, 트리에틸렌글리콜모노에틸에테르, 글리세린, 1,2-헥산디올 등), 알코올계 용매(메탄올, 에탄올, 프로판올, 이소프로판올, 시클로헥산올 등), 술폭시드계 용매(디메틸술폭시드 등), 아미드계 용매(N-메틸-2-피롤리돈, N,N-디메틸포름아미드 등)가 예시되고, 이들 중에서 선택하여 사용할 수 있다. 또한, 이들 유기 용매는 1종 단독으로 이용하거나 2종 이상을 병용할 수도 있다.It is preferable that the solvent can dissolve or uniformly disperse the composition. Examples of the solvent include chlorine solvents (chloroform, methylene chloride, 1,2-dichloroethane, 1,1,2-trichloroethane, chlorobenzene, o-dichlorobenzene, etc.) and ether solvents (tetrahydrofuran, dioxane, etc.) , Aromatic hydrocarbon solvents (toluene, xylene, etc.), aliphatic hydrocarbon solvents (cyclohexane, methylcyclohexane, n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane, etc.), Ketone solvents (acetone, methyl ethyl ketone, cyclohexanone, etc.), ester solvents (ethyl acetate, butyl acetate, ethyl cellosolve acetate, etc.), polyhydric alcohols and derivatives thereof (ethylene glycol, ethylene glycol monobutyl ether, ethylene Glycol monoethyl ether, ethylene glycol monomethyl ether, dimethoxyethane, propylene glycol, diethoxymethane, triethylene glycol monoethyl ether, glycerin, 1,2-hexanediol, etc., alcohol solvents (methanol, ethanol, propanol, Isov Ropanol, cyclohexanol, etc.), sulfoxide solvents (dimethylsulfoxide, etc.), amide solvents (N-methyl-2-pyrrolidone, N, N-dimethylformamide, etc.) are exemplified and selected from these. Can be used. In addition, these organic solvents may be used individually by 1 type, or may use 2 or more types together.
잉크젯 인쇄법을 이용하는 경우에는 헤드로부터의 토출성, 변동 등의 개선을 위해, 용액 중의 용매의 선택, 첨가제로서 공지된 방법을 사용할 수 있다. 이 경우, 용액의 점도가 25 ℃에서 1 내지 100 mPaㆍs인 것이 바람직하다. 또한, 증발이 너무 현저하면 헤드로부터 토출을 반복하는 것이 어려워지는 경향이 있다. 상기한 바와 같은 관점에서, 이용되는 바람직한 용매로서는 예를 들면 아니솔, 비시클로헥실, 크실렌, 테트랄린, 도데실벤젠을 포함하는 단독 또는 혼합 용매를 들 수 있다. 일반적으로는 복수의 용매를 혼합하는 방법, 조성물의 용액 중에서의 농도를 조정하는 방법 등에 의해서 이용한 조성물에 맞는 잉크젯용의 용액을 얻을 수 있다.In the case of using the inkjet printing method, it is possible to use a known method as the selection of the solvent in the solution and the additive in order to improve the ejectability, fluctuation and the like from the head. In this case, it is preferable that the viscosity of a solution is 1-100 mPa * s at 25 degreeC. Moreover, when evaporation is too remarkable, it will become difficult to repeat discharge from a head. In view of the above, preferred solvents to be used include, for example, single or mixed solvents containing anisole, bicyclohexyl, xylene, tetralin and dodecylbenzene. Generally, the solution for inkjets suitable for the composition used by the method of mixing some solvent, the method of adjusting the density | concentration in the solution of a composition, etc. can be obtained.
<고분자><Polymer>
본 발명의 고분자는 상기 인광 발광성 화합물의 잔기와 상기 피라진환 구조를 갖는 것이다. 상기 피라진환 구조는 상기 조성물의 항에서 설명하고 예시한 것과 동일하다. 본 발명의 고분자로서는 (1) 고분자의 주쇄에 인광 발광성 화합물의 구조를 갖는 고분자, (2) 고분자의 말단에 인광 발광성 화합물의 구조를 갖는 고분자, (3) 고분자의 측쇄에 인광 발광성 화합물의 구조를 갖는 고분자 등을 들 수 있다.The polymer of the present invention has a residue of the phosphorescent compound and the pyrazine ring structure. The pyrazine ring structure is the same as described and exemplified in the section of the composition. As the polymer of the present invention, (1) a polymer having a structure of a phosphorescent compound in the main chain of the polymer, (2) a polymer having a structure of a phosphorescent compound at the end of the polymer, and (3) a structure of a phosphorescent compound in the side chain of the polymer The polymer which has it is mentioned.
<발광 소자><Light emitting element>
다음으로, 본 발명의 발광 소자에 대해서 설명한다.Next, the light emitting element of this invention is demonstrated.
본 발명의 발광 소자는 상기 조성물 또는 상기 고분자를 이용하여 이루어지는 것으로, 통상 양극 및 음극을 포함하는 전극 사이의 적어도 어느 부위에 상기 조성물 또는 상기 고분자를 포함하지만, 이들을 상기 발광성 박막의 형태로 발광층으로서 포함하는 것이 바람직하다. 또한, 발광 효율, 내구성 등의 성능을 향상시키는 관점에서, 다른 기능을 갖는 공지된 층을 하나 이상 포함하고 있을 수 있다. 이러한 층으로서는 전하 수송층(즉, 정공 수송층, 전자 수송층), 전하 저지층(즉, 정공 저지층, 전자 저지층), 전하 주입층(즉, 정공 주입층, 전자 주입층), 완충층 등을 들 수 있다. 또한, 본 발명의 발광 소자에 있어서, 발광층, 전하 수송층, 전하 저지층, 전하 주입층, 완충층 등은 각각 한층을 포함하는 것이거나 2층 이상을 포함하는 것일 수 있다.The light emitting device of the present invention comprises the composition or the polymer, and usually contains the composition or the polymer at least at a portion between an electrode including an anode and a cathode, but includes them as a light emitting layer in the form of the light emitting thin film. It is desirable to. In addition, from the viewpoint of improving the performance such as luminous efficiency, durability, etc., it may include one or more known layers having other functions. Examples of such a layer include a charge transport layer (ie, a hole transporting layer, an electron transporting layer), a charge blocking layer (ie, a hole blocking layer, an electron blocking layer), a charge injection layer (ie, a hole injection layer, an electron injection layer), a buffer layer, and the like. have. In the light emitting device of the present invention, the light emitting layer, the charge transport layer, the charge blocking layer, the charge injection layer, the buffer layer, and the like may each include one layer or two or more layers.
상기 발광층은 발광하는 기능을 갖는 층이다. 상기 정공 수송층은 정공을 수송하는 기능을 갖는 층이다. 상기 전자 수송층은 전자를 수송하는 기능을 갖는 층이다. 이들 전자 수송층과 정공 수송층을 총칭하여 전하 수송층이라고 한다. 또한, 전하 저지층은 정공 또는 전자를 발광층에 차광하는 기능을 갖는 층이고, 전자를 수송하고, 또한 정공을 차광하는 층을 정공 저지층이라고 하고, 정공을 수송하고, 또한 전자를 차광하는 층을 전자 저지층이라고 한다.The light emitting layer is a layer having a function of emitting light. The hole transport layer is a layer having a function of transporting holes. The electron transport layer is a layer having a function of transporting electrons. These electron transport layer and hole transport layer are collectively called charge transport layer. The charge blocking layer is a layer having a function of shielding holes or electrons from the light emitting layer, and a layer for transporting electrons and shielding holes is called a hole blocking layer, and a layer for transporting holes and shielding electrons. It is called the electron blocking layer.
상기 완충층으로서는 양극에 인접하여 도전성 고분자를 포함하는 층을 들 수 있다.As said buffer layer, the layer containing a conductive polymer adjacent to an anode is mentioned.
본 발명의 발광 소자의 구체예로서는 이하의 a) 내지 q)의 구조를 들 수 있다.As a specific example of the light emitting element of this invention, the structures of the following a) -q) are mentioned.
a) 양극/발광층/음극a) anode / light emitting layer / cathode
b) 양극/정공 수송층/발광층/음극b) anode / hole transport layer / light emitting layer / cathode
c) 양극/발광층/전자 수송층/음극c) anode / light emitting layer / electron transport layer / cathode
d) 양극/발광층/정공 저지층/음극d) anode / light emitting layer / hole blocking layer / cathode
e) 양극/정공 수송층/발광층/전자 수송층/음극e) anode / hole transport layer / light emitting layer / electron transport layer / cathode
f) 양극/전하 주입층/발광층/음극f) anode / charge injection layer / light emitting layer / cathode
g) 양극/발광층/전하 주입층/음극g) anode / light emitting layer / charge injection layer / cathode
h) 양극/전하 주입층/발광층/전하 주입층/음극h) anode / charge injection layer / light emitting layer / charge injection layer / cathode
i) 양극/전하 주입층/정공 수송층/발광층/음극i) anode / charge injection layer / hole transport layer / light emitting layer / cathode
j) 양극/정공 수송층/발광층/전하 주입층/음극j) anode / hole transport layer / light emitting layer / charge injection layer / cathode
k) 양극/전하 주입층/정공 수송층/발광층/전하 주입층/음극k) anode / charge injection layer / hole transport layer / light emitting layer / charge injection layer / cathode
l) 양극/전하 주입층/발광층/전자 수송층/음극l) anode / charge injection layer / light emitting layer / electron transport layer / cathode
m) 양극/발광층/전자 수송층/전하 주입층/음극m) anode / light emitting layer / electron transport layer / charge injection layer / cathode
n) 양극/전하 주입층/발광층/전자 수송층/전하 주입층/음극n) anode / charge injection layer / light emitting layer / electron transport layer / charge injection layer / cathode
o) 양극/전하 주입층/정공 수송층/발광층/전자 수송층/음극o) anode / charge injection layer / hole transport layer / light emitting layer / electron transport layer / cathode
p) 양극/정공 수송층/발광층/전자 수송층/전하 주입층/음극p) anode / hole transport layer / light emitting layer / electron transport layer / charge injection layer / cathode
q) 양극/전하 주입층/정공 수송층/발광층/전자 수송층/전하 주입층/음극q) anode / charge injection layer / hole transport layer / light emitting layer / electron transport layer / charge injection layer / cathode
(여기서, /는 각 층이 인접하여 적층되어 있는 것을 나타내고, 이하 동일하고, 또한 발광층, 정공 수송층, 전자 수송층은 각각 독립적으로 2층 이상 이용할 수도 있음)(Here, / indicates that each layer is stacked adjacent to each other and is the same below, and the light emitting layer, the hole transporting layer, and the electron transporting layer may each independently use two or more layers)
본 발명의 발광 소자가 정공 수송층을 갖는 경우(통상, 정공 수송층은 정공 수송 재료를 함유함), 정공 수송 재료로서는 공지된 재료를 적절하게 선택하여 사용할 수 있다. 그의 구체예로서는 폴리비닐카르바졸 및 그의 유도체, 폴리실란 및 그의 유도체, 측쇄 또는 주쇄에 방향족 아민을 갖는 폴리실록산 유도체, 피라졸린 유도체, 아릴아민 유도체, 스틸벤 유도체, 트리페닐디아민 유도체, 폴리아닐린 및 그의 유도체, 폴리티오펜 및 그의 유도체, 폴리피롤 및 그의 유도체, 폴리(p-페닐렌비닐렌) 및 그의 유도체, 및 폴리(2,5-티에닐렌비닐렌) 및 그의 유도체 등의 고분자 정공 수송 재료를 들 수 있다. 상기 정공 수송 재료로서는 일본 특허 공개 (소)63-70257호 공보, 동 63-175860호 공보, 일본 특허 공개 (평)2-135359호 공보, 동 2-135361호 공보, 동 2-209988호 공보, 동 3-37992호 공보, 동 3-152184호 공보에 기재되어 있는 것 등이 예시된다.When the light emitting element of the present invention has a hole transporting layer (usually, the hole transporting layer contains a hole transporting material), a known material can be appropriately selected and used as the hole transporting material. Specific examples thereof include polyvinylcarbazole and its derivatives, polysilane and its derivatives, polysiloxane derivatives having an aromatic amine in the side chain or the main chain, pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine derivatives, polyaniline and derivatives thereof, And polymer hole transport materials such as polythiophene and derivatives thereof, polypyrrole and derivatives thereof, poly (p-phenylenevinylene) and derivatives thereof, and poly (2,5-thienylenevinylene) and derivatives thereof. . As the hole transporting material, Japanese Patent Laid-Open No. 63-70257, Japanese Patent Laid-Open No. 63-175860, Japanese Patent Laid-Open No. 2-135359, Japanese Patent No. 2-135361, Japanese Patent No. 2-209988, What is described in Unexamined-Japanese-Patent No. 3-37992, 3-152184, etc. are illustrated.
본 발명의 발광 소자가 전자 수송층을 갖는 경우(통상, 전자 수송층은 전자 수송 재료를 함유함), 전자 수송 재료로서는 공지된 것을 적절하게 선택하여 사용할 수 있다. 그의 구체예로서는 옥사디아졸 유도체, 안트라퀴노디메탄 및 그의 유도체, 벤조퀴논 및 그의 유도체, 나프토퀴논 및 그의 유도체, 안트라퀴논 및 그의 유도체, 테트라시아노안트라퀴노디메탄 및 그의 유도체, 플루오레논 유도체, 디페닐디시아노에틸렌 및 그의 유도체, 디페노퀴논 유도체, 8-히드록시퀴놀린 및 그의 유도체의 금속 착체, 폴리퀴놀린 및 그의 유도체, 폴리퀴녹살린 및 그의 유도체, 및 폴리플루오렌 및 그의 유도체 등을 들 수 있다.When the light emitting element of this invention has an electron carrying layer (normally an electron carrying layer contains an electron carrying material), a well-known thing can be suitably selected and used as an electron carrying material. Specific examples thereof include oxadiazole derivatives, anthraquinodimethane and derivatives thereof, benzoquinone and derivatives thereof, naphthoquinone and derivatives thereof, anthraquinone and derivatives thereof, tetracyanoanthraquinodimethane and derivatives thereof, fluorenone derivatives, Diphenyl dicyanoethylene and derivatives thereof, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and derivatives thereof, polyquinoline and derivatives thereof, polyquinoxaline and derivatives thereof, and polyfluorene and derivatives thereof; have.
상기 정공 수송층 및 전자 수송층의 막 두께는, 이용하는 재료에 따라서 최적치가 다르고, 구동 전압과 발광 효율이 적절한 값이 되도록 선택할 수 있지만, 적어도 핀홀이 발생하지 않는 두께가 필요하고, 너무 두꺼우면, 소자의 구동 전압이 높아져서 바람직하지 않다. 따라서, 상기 정공 수송층 및 전자 수송층의 막 두께는, 예를 들면 1 nm 내지 1 μm이고, 바람직하게는 2 nm 내지 500 nm이고, 더욱 바람직하게는 5 nm 내지 200 nm이다.The film thickness of the hole transport layer and the electron transport layer may be selected so that the optimum value varies depending on the material used, and the driving voltage and the luminous efficiency are appropriate values. However, at least a thickness at which pinholes do not occur is required. It is not preferable because the driving voltage becomes high. Therefore, the film thickness of the hole transport layer and the electron transport layer is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
또한, 전극에 인접하여 설치한 전하 수송층 중, 전극으로부터의 전하 주입 효율을 개선하는 기능을 갖고, 소자의 구동 전압을 내리는 효과를 갖는 것은 특히 전하 주입층(즉, 정공 주입층, 전자 주입층의 총칭이고, 이하 동일함)으로 불리는 경우가 있다.In addition, among the charge transport layers provided adjacent to the electrodes, those having the function of improving the charge injection efficiency from the electrodes and having the effect of lowering the driving voltage of the device are particularly those of the charge injection layers (ie, the hole injection layer and the electron injection layer). Generic terms, which are the same below).
또한, 전극과의 밀착성 향상이나 전극으로부터의 전하 주입의 개선를 위해, 전극에 인접하여 상기 전하 주입층 또는 절연층(통상, 평균막 두께로 0.5 nm 내지 4 nm이고, 이하 동일함)을 설치할 수도 있고, 또한 계면의 밀착성 향상이나 혼합의 방지 등을 위해 전하 수송층이나 발광층의 계면에 얇은 완충층을 삽입할 수도 있다.In addition, in order to improve adhesion to the electrode or to improve charge injection from the electrode, the charge injection layer or the insulating layer (usually 0.5 nm to 4 nm in average film thickness, which is the same below) may be provided adjacent to the electrode. In addition, a thin buffer layer may be inserted at the interface of the charge transport layer or the light emitting layer in order to improve the adhesion of the interface, to prevent mixing, and the like.
적층하는 층의 순서나 수, 및 각 층의 두께는 발광 효율이나 소자 수명을 감안하여 적절하게 선택할 수 있다.The order and number of layers to be laminated, and the thickness of each layer can be appropriately selected in consideration of luminous efficiency and device life.
상기 전하 주입층으로서는 도전성 고분자를 포함하는 층, 양극과 정공 수송층과의 사이에 설치되어, 양극 재료와 정공 수송층에 포함되는 정공 수송 재료와의 중간의 값의 이온화 포텐셜을 갖는 재료를 포함하는 층, 음극과 전자 수송층과의 사이에 설치되어, 음극 재료와 전자 수송층에 포함되는 전자 수송 재료와의 중간의 값의 전자 친화력을 갖는 재료를 포함하는 층 등을 들 수 있다.As the charge injection layer, a layer comprising a conductive polymer, a layer provided between the anode and the hole transport layer and comprising a material having an ionization potential having a median value between the anode material and the hole transport material included in the hole transport layer, The layer etc. which are provided between a cathode and an electron carrying layer, and the material which has the electron affinity of the intermediate value between the cathode material and the electron carrying material contained in an electron carrying layer are mentioned.
상기 전하 주입층에 이용하는 재료로서는 전극이나 인접하는 층의 재료와의 관계에서 적절하게 선택할 수 있고, 폴리아닐린 및 그의 유도체, 폴리티오펜 및 그의 유도체, 폴리피롤 및 그의 유도체, 폴리페닐렌비닐렌 및 그의 유도체, 폴리티에닐렌비닐렌 및 그의 유도체, 폴리퀴놀린 및 그의 유도체, 폴리퀴녹살린 및 그의 유도체, 방향족 아민 구조를 주쇄 또는 측쇄에 포함하는 중합체 등의 도전성 고분자, 금속 프탈로시아닌(구리 프탈로시아닌 등), 카본 등이 예시된다.As a material used for the said charge injection layer, it can select suitably from the relationship with the material of an electrode or an adjacent layer, Polyaniline and its derivative (s), Polythiophene and its derivative (s), Polypyrrole and its derivative (s), Polyphenylenevinylene and its derivative (s) , Polythienylenevinylene and derivatives thereof, polyquinoline and derivatives thereof, polyquinoxaline and derivatives thereof, conductive polymers such as polymers containing an aromatic amine structure in the main chain or side chain, metal phthalocyanine (such as copper phthalocyanine), carbon, and the like Is illustrated.
상기 절연층은 전하 주입을 용이하게 하는 기능을 갖는 것이다. 상기 절연층의 재료로서는 금속 불화물, 금속 산화물, 유기 절연 재료 등을 들 수 있다. 상기 절연층을 설치한 발광 소자로서는, 예를 들면 음극에 인접하여 절연층을 설치한 발광 소자, 양극에 인접하여 절연층을 설치한 발광 소자를 들 수 있다.The insulating layer has a function of facilitating charge injection. As a material of the said insulating layer, a metal fluoride, a metal oxide, an organic insulating material, etc. are mentioned. As a light emitting element provided with the said insulating layer, the light emitting element which provided the insulating layer adjacent to the cathode, and the light emitting element which provided the insulating layer adjacent to the anode are mentioned, for example.
본 발명의 발광 소자는, 통상 기판 상에 형성된다. 상기 기판은, 전극을 형성하고, 유기물의 층을 형성할 때에 변화하지 않는 것이면 되고, 유리, 플라스틱, 고분자 필름, 실리콘 등의 기판을 들 수 있다. 불투명한 기판의 경우에는 반대의 전극이 투명 또는 반투명한 것이 바람직하다.The light emitting element of this invention is normally formed on a board | substrate. When the said board | substrate forms an electrode and forms a layer of organic substance, what is necessary is just what does not change, and board | substrates, such as glass, a plastic, a polymer film, and silicon, are mentioned. In the case of an opaque substrate, it is preferable that the opposite electrode is transparent or translucent.
본 발명의 발광 소자가 갖는 양극 및 음극의 적어도 한쪽은, 통상 투명 또는 반투명하다. 그 중에서도, 양극측이 투명 또는 반투명한 것이 바람직하다.At least one of the anode and the cathode of the light emitting device of the present invention is usually transparent or translucent. Especially, it is preferable that the anode side is transparent or translucent.
상기 양극의 재료로서는, 통상 도전성의 금속 산화물막, 반투명의 금속 박막 등이 이용된다. 그의 구체예로서는 산화인듐, 산화아연, 산화주석, 및 이들의 복합체인 인듐ㆍ주석ㆍ옥사이드(ITO), 인듐ㆍ아연ㆍ옥사이드 등을 포함하는 도전성 유리를 이용하여 제조된 막(NESA 등)이나, 금, 백금, 은, 구리 등이 이용되고, ITO, 인듐ㆍ아연ㆍ옥사이드, 산화주석이 바람직하다. 제조 방법으로서는 진공 증착법, 스퍼터링법, 이온 플레이팅법, 도금법 등을 들 수 있다. 또한, 상기 양극으로서, 폴리아닐린 및 그의 유도체, 폴리티오펜 및 그의 유도체 등의 유기의 투명 도전막을 이용할 수도 있다. 또한, 양극을 2층 이상의 적층 구조로 할 수도 있다.As the material of the anode, a conductive metal oxide film, a semitransparent metal thin film, or the like is usually used. As a specific example, the film | membrane (NESA etc.) manufactured using the electroconductive glass containing indium oxide, zinc oxide, tin oxide, and indium tin oxide (ITO), indium zinc oxide, etc. which are these complexes, gold, , Platinum, silver, copper and the like are used, and ITO, indium zinc oxide and tin oxide are preferable. As a manufacturing method, a vacuum vapor deposition method, sputtering method, an ion plating method, a plating method, etc. are mentioned. Moreover, as said anode, organic transparent conductive films, such as polyaniline and its derivative (s), polythiophene and its derivative (s), can also be used. In addition, the anode may have a laminated structure of two or more layers.
상기 음극의 재료로서는, 통상 일함수가 작은 재료가 바람직하고, 예를 들면 리튬, 나트륨, 칼륨, 루비듐, 세슘, 베릴륨, 마그네슘, 칼슘, 스트론튬, 바륨, 알루미늄, 스칸듐, 바나듐, 아연, 이트륨, 인듐, 세륨, 사마륨, 유로퓸, 테르븀, 이테르븀 등의 금속, 및 이들 중 2개 이상의 합금, 또는 이들 중 1개 이상과 금, 은, 백금, 구리, 망간, 티탄, 코발트, 니켈, 텅스텐, 주석 중 1개 이상과의 합금, 흑연 또는 흑연 층간 화합물 등이 이용된다. 합금으로서는 마그네슘-은 합금, 마그네슘-인듐 합금, 마그네슘-알루미늄 합금, 인듐-은 합금, 리튬-알루미늄 합금, 리튬-마그네슘 합금, 리튬-인듐 합금, 칼슘-알루미늄 합금 등을 들 수 있다. 또한, 음극을 2층 이상의 적층 구조로 할 수도 있다.As the material of the negative electrode, a material having a small work function is usually preferable. For example, lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium , Metals such as cerium, samarium, europium, terbium and ytterbium, and two or more alloys thereof, or one or more of these and one of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, tin Alloys with two or more, graphite or graphite intercalation compounds and the like. Examples of the alloy include a magnesium-silver alloy, a magnesium-indium alloy, a magnesium-aluminum alloy, an indium-silver alloy, a lithium-aluminum alloy, a lithium-magnesium alloy, a lithium-indium alloy, a calcium-aluminum alloy, and the like. The cathode may also have a laminated structure of two or more layers.
본 발명의 발광 소자는 면상 광원, 표시 장치(세그멘트 표시 장치, 도트 매트릭스 표시 장치, 액정 표시 장치 등), 그의 백 라이트(상기 발광 소자를 백 라이트로서 구비한 액정 표시 장치 등) 등으로서 사용할 수 있다.The light emitting element of the present invention can be used as a planar light source, a display device (segment display device, dot matrix display device, liquid crystal display device, etc.), its backlight (such as a liquid crystal display device having the light emitting element as a backlight), or the like. .
본 발명의 발광 소자를 이용하여 면상의 발광을 얻기 위해서는 면상의 양극과 음극이 중첩되도록 배치할 수 있다. 또한, 패턴상의 발광을 얻기 위해서는 상기 면상의 발광 소자의 표면에 패턴상의 창을 설치한 마스크를 설치하는 방법, 비발광부의 유기물층을 극단적으로 두껍게 형성하여 실질적으로 비발광으로 하는 방법, 양극 또는 음극 중 어느 한쪽 또는 양쪽의 전극을 패턴상으로 형성하는 방법이 있다. 이들 중 어느 하나의 방법으로 패턴을 형성하여, 몇개의 전극을 독립적으로 ON/OFF할 수 있도록 배치함으로써, 숫자나 문자, 간단한 기호 등을 표시할 수 있는 세그멘트 타입의 표시 소자가 얻어진다. 또한, 도트 매트릭스 소자로 하기 위해서는 양극과 음극을 함께 스트라이프형으로 형성하여 직교하도록 배치할 수 있다. 복수의 종류의 발광색이 다른 고분자 형광체를 분할 도포하는 방법이나, 컬러 필터 또는 형광 변환 필터를 이용하는 방법에 의해, 부분 컬러 표시, 멀티 컬러 표시가 가능해진다. 도트 매트릭스 소자는 패시브 구동도 가능하고, TFT 등과 조합하여 액티브 구동할 수도 있다. 이들 표시 소자는 컴퓨터, 텔레비젼, 휴대 단말, 휴대 전화, 차 내비게이션, 비디오 카메라의 뷰 파인더 등의 표시 장치로서 사용할 수 있다. 또한, 상기 면상의 발광 소자는 자발 광박형이고, 액정 표시 장치의 백 라이트용의 면상 광원, 또는 면상의 조명용 광원으로서 바람직하게 사용할 수 있다. 또한, 플렉시블한 기판을 이용하면, 곡면상의 광원이나 표시 장치로서도 사용할 수 있다.In order to obtain planar light emission using the light emitting device of the present invention, the planar anode and cathode may be disposed to overlap each other. In addition, in order to obtain pattern light emission, a method of providing a mask having a patterned window on the surface of the planar light emitting device, an extremely thick organic material layer of the non-light emitting part, and making it substantially non-emission, among the anode or the cathode There is a method of forming one or both electrodes in a pattern shape. By forming a pattern by any of these methods, and arrange | positioning so that several electrodes can turn ON / OFF independently, the segment type display element which can display a number, a letter, a simple symbol, etc. is obtained. In addition, in order to form a dot matrix element, the anode and the cathode may be formed in a stripe shape and arranged so as to cross at right angles. The partial color display and the multi-color display are possible by the method of apply | coating partly the polymeric fluorescent substance from which several light emission colors differ, or the method of using a color filter or a fluorescence conversion filter. The dot matrix element can be passively driven or can be actively driven in combination with a TFT or the like. These display elements can be used as display devices such as computers, televisions, portable terminals, mobile phones, car navigation systems, and view finders of video cameras. In addition, the planar light emitting element is a spontaneous light thin type, and can be suitably used as a planar light source for backlight of a liquid crystal display device or a planar illumination light source. Moreover, when a flexible board | substrate is used, it can be used also as a curved light source or a display apparatus.
본 발명의 조성물, 고분자는 소자의 제조에 유용할 뿐만 아니라, 유기 반도체 재료 등의 반도체 재료, 발광 재료, 광학 재료, 도전성 재료(예를 들면, 도핑에 의해 적용함)로서 이용할 수도 있다. 따라서, 상기 조성물, 고분자를 이용하여, 발광성 박막, 도전성 박막, 유기 반도체 박막 등의 막을 제조할 수 있다.The composition and the polymer of the present invention are not only useful for the production of devices, but can also be used as semiconductor materials such as organic semiconductor materials, light emitting materials, optical materials, and conductive materials (for example, applied by doping). Therefore, a film, such as a luminescent thin film, a conductive thin film, an organic semiconductor thin film, can be manufactured using the said composition and a polymer.
본 발명의 조성물, 고분자는 상기 발광 소자의 발광층에 이용되는 발광성 박막의 제조 방법과 동일한 방법으로, 도전성 박막 및 반도체 박막을 성막, 소자화할 수 있다. 반도체 박막은 전자 이동도 또는 정공 이동도 중 큰 쪽이, 10-5 ㎠/V/초 이상인 것이 바람직하다. 또한, 유기 반도체 박막은 유기 태양 전지, 유기 트랜지스터 등에 사용할 수 있다.The composition and the polymer of the present invention can form and elementize the conductive thin film and the semiconductor thin film by the same method as the method for producing the light emitting thin film used in the light emitting layer of the light emitting device. It is preferable that the larger of an electron mobility or a hole mobility is a semiconductor thin film of 10-5 cm <2> / V / sec or more. The organic semiconductor thin film can be used for organic solar cells, organic transistors, and the like.
이하, 본 발명을 더 상세히 설명하기 위해서 실시예를 나타내지만, 본 발명은 이것으로 한정되는 것은 아니다.Hereinafter, although an Example is shown in order to demonstrate this invention further in detail, this invention is not limited to this.
<실시예 1><Example 1>
상기 화학식으로 표시되는 고분자 (P-1)의 n=∞에 있어서의 외삽치인 최저 삼중항 여기 에너지 T1(1/n=0)은 3.1 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO(1/n=0)는 2.3 eV였다. 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 피라진환) 사이의 이면각은 61°였다.The lowest triplet excitation energy T 1 (1 / n = 0), which is an extrapolation value at n = ∞ of the polymer (P-1) represented by the above formula, is 3.1 eV, and is the absolute value E of the energy level of the lowest boiling point molecular orbit. LUMO (1 / n = 0) was 2.3 eV. The back angle between the pyrazine ring and the partial structure adjacent to the pyrazine ring (pyrazine ring in this example) was 61 degrees.
매개 변수의 계산은 발명의 상세한 설명에 기재되어 있는 계산 과학적 수법으로 실시하였다. 구체적으로는 고분자 (P-1)에 있어서의 하기 반복 단위 (M-1)을 (M-1a)와 간략화하여, HF법에 의해 구조 최적화를 행하였다.The calculation of the parameters was carried out by the calculation scientific method described in the detailed description of the invention. Specifically, the following repeating unit (M-1) in the polymer (P-1) was simplified with (M-1a), and structural optimization was performed by the HF method.
그 때, 기저 함수로서는 6-31G*을 이용하였다. 그 후, 동일한 기저를 이용하여, B3P86 레벨의 시간 의존 밀도 범함수법에 의해, 최저 비점유 분자 궤도의 에너지 레벨 및 최저 삼중항 여기 에너지를 산출하였다. 화학 구조를 간략화한 것의 타당성은, 일본 특허 공개 제2005-126686호 공보에 기재된 방법으로, 최저 삼중항 여기 에너지 및 최저 비점 분자 궤도의 에너지 레벨에 대한 알킬측쇄 길이 의존성이 작다는 것에 의해 확인하였다(이하, 동일함). 또한, 상기 이면각은 3량체(n=3의 경우)에 있어서의 구조 최적화된 구조를 이용하여 산출하였다.At that time, 6-31 G * was used as a basis function. Then, using the same basis, the energy level of the lowest unoccupied molecular orbit and the lowest triplet excitation energy were calculated by the B3P86 level time dependent density functional method. The feasibility of simplifying the chemical structure was confirmed by the method described in Japanese Unexamined Patent Publication No. 2005-126686 by the fact that the alkyl side chain length dependency on the energy level of the lowest triplet excitation energy and the lowest boiling point molecular orbit was small ( The same below). In addition, the said back angle was computed using the structure optimized structure in trimer (in the case of n = 3).
고분자 (P-1)과 인광 발광성 화합물을 포함하는 조성물을 이용하여 발광 소자를 제조하면, 발광 효율이 우수하다.If a light emitting element is manufactured using the composition containing a polymer (P-1) and a phosphorescent compound, it is excellent in luminous efficiency.
<실시예 2><Example 2>
상기 화학식으로 표시되는 고분자 (P-2)의 n=∞에 있어서의 외삽치인 최저 삼중항 여기 에너지 T1(1/n=0)은 2.9 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO(1/n=0)는 2.1 eV였다. 계산에는 하기의 간략화한 반복 단위 (M-2a)를 이용하였다. 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 플루오렌 골격) 사이의 이면각은 62°였다.The lowest triplet excitation energy T 1 (1 / n = 0), which is an extrapolation value at n = ∞ of the polymer (P-2) represented by the above formula, is 2.9 eV and is the absolute value E of the energy level of the lowest boiling point molecular orbit. LUMO (1 / n = 0) was 2.1 eV. The following simplified repeating unit (M-2a) was used for the calculation. The backside angle between the pyrazine ring and the partial structure adjacent to the pyrazine ring (fluorene skeleton in this embodiment) was 62 °.
고분자 (P-2)와 인광 발광성 화합물을 포함하는 조성물을 이용하여 발광 소자를 제조하면, 발광 효율이 우수하다.When a light emitting element is manufactured using the composition containing a polymer (P-2) and a phosphorescent compound, light emission efficiency is excellent.
<실시예 3><Example 3>
상기 화학식으로 실질적으로 표시되는 고분자 (P-3)의 n=∞에 있어서의 외삽치인 최저 삼중항 여기 에너지 T1(1/n=0)은 2.88 eV 내지 2.9 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO(1/n=0)는 2.3 eV였다. 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 벤젠환)의 사이의 이면각은 49°였다. 또한, 벤젠환과 그것에 인접하는 벤젠환의 사이의 이면각은 44°였다. 계산에는 하기의 간략화한 반복 단위 (M-3a)를 이용하였다.The lowest triplet excitation energy T 1 (1 / n = 0), which is an extrapolation at n = ∞ of the polymer (P-3) substantially represented by the above formula, is 2.88 eV to 2.9 eV, and the energy of the lowest boiling point molecular orbital. The absolute value E LUMO (1 / n = 0) of the level was 2.3 eV. The back angle between the pyrazine ring and the partial structure adjacent to the pyrazine ring (benzene ring in this example) was 49 °. In addition, the back surface angle between the benzene ring and the benzene ring adjacent to it was 44 degrees. The following simplified repeating unit (M-3a) was used for the calculation.
상기 화학식 (P-3)으로 실질적으로 표시되는 고분자에 대해서는 상기 고분자를 구성하는 반복 단위가 2종이고, 상기한 간략화한 반복 단위 (M-3a) 이외에, 하기 간략화한 반복 단위 (M-3b)도 고려되어, 상기 반복 단위 (M-3b)를 이용하여 계산한 결과, n=∞에 있어서의 외삽치인 최저 삼중항 여기 에너지 T1(1/n=0)은 2.89 eV 내지 2.9 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO(1/n=0)는 2.3 eV였다. n=∞에 있어서의 외삽치인 최저 삼중항 여기 에너지 T1은 상기 반복 단위 (M-3a)를 이용하여 얻어진 계산값(2.88 eV)쪽이 상기 반복 단위 (M-3b)를 이용하여 얻어진 계산값 (2.89 eV) 보다도 작기 때문에, 고분자 (P-3)의 최저 삼중항 여기 에너지 및 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 각각 상기 반복 단위 (M-3a)를 이용하여 얻어진 계산값인 2.9 eV와 2.3 eV로 하였다.For the polymer substantially represented by the formula (P-3), there are two kinds of repeating units constituting the polymer, and in addition to the above-mentioned simplified repeating unit (M-3a), the following simplified repeating unit (M-3b) Also considered, the lowest triplet excitation energy T 1 (1 / n = 0), which is an extrapolation at n = ∞, is calculated from the repeating unit (M-3b), and is the lowest from 2.89 eV to 2.9 eV. The absolute value E LUMO (1 / n = 0) of the energy level of the boiling point molecular orbit was 2.3 eV. The lowest triplet excitation energy T 1, which is an extrapolation value at n = ∞, is the calculated value (2.88 eV) obtained using the repeating unit (M-3a), and the calculated value obtained using the repeating unit (M-3b). Since it is smaller than (2.89 eV), the absolute value E LUMO of the lowest triplet excitation energy and the lowest boiling point molecular orbital energy level of the polymer (P-3) are calculated values obtained using the repeating unit (M-3a), respectively. 2.9 eV and 2.3 eV.
<실시예 4><Example 4>
상기 화학식으로 표시되는 인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 하기 화학식 6-1로 표시되는 화합물의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.About a THF solution (0.05 wt%) of the phosphorescent compound (MC-1) represented by the above formula, about 5 times by weight of a THF solution (about 1 wt%) of the compound represented by the following formula (6-1) was mixed. . 10 microliters of the obtained solution was dripped at the slide glass, and it air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<화학식 6-1><Formula 6-1>
상기 화학식 6-1로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 3.4 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 2.0 eV였다. 또한, 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 벤젠환) 사이의 이면각은 59°였다.The lowest triplet excitation energy T 1 of the compound represented by Chemical Formula 6-1 was 3.4 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 2.0 eV. In addition, the back angle between the pyrazine ring and the partial structure adjacent to the pyrazine ring (benzene ring in this example) was 59 degrees.
또한, 상기 화학식 6-1로 표시되는 화합물은 일본 특허 공개 제2004-292432호 공보에 기재된 방법에 의해 합성하였다. 또한, 상기 화학식 MC-1은 WO02/066552에 기재된 방법에 준하여 합성하였다.In addition, the compound represented by the said Chemical formula 6-1 was synthesize | combined by the method of Unexamined-Japanese-Patent No. 2004-292432. In addition, the formula MC-1 was synthesized according to the method described in WO02 / 066552.
<실시예 5><Example 5>
인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 하기 화학식 6-2로 표시되는 화합물의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색발광이 나타났다.To a THF solution (0.05 wt%) of the phosphorescent compound (MC-1), a THF solution (about 1 wt%) of a compound represented by the following formula (6-2) of about 5 times the weight was mixed. 10 microliters of the obtained solution was dripped at the slide glass, and it air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<화학식 6-2><Formula 6-2>
상기 화학식 6-2로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 3.4 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 2.1 eV였다. 또한, 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 벤젠환) 사이의 이면각은 60°였다.The lowest triplet excitation energy T 1 of the compound represented by Formula 6-2 was 3.4 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 2.1 eV. Moreover, the back surface angle between the pyrazine ring and the partial structure adjacent to the said pyrazine ring (benzene ring in a present Example) was 60 degrees.
또한, 상기 화학식 6-2로 표시되는 화합물은 일본 특허 공개 제2004-292432호 공보에 기재된 방법에 의해 합성하였다.In addition, the compound represented by the said Chemical formula 6-2 was synthesize | combined by the method of Unexamined-Japanese-Patent No. 2004-292432.
<실시예 6><Example 6>
인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 하기 화학식 6-3으로 표시되는 화합물의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.To a THF solution (0.05 wt%) of the phosphorescent compound (MC-1), about 5 times the THF solution (about 1 wt%) of the compound represented by the following formula (6-3) was mixed. 10 microliters of the obtained solution was dripped at the slide glass, and it air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<화학식 6-3><Formula 6-3>
상기 화학식 6-3으로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 3.3 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 2.2 eV였다. 또한, 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 벤젠환) 사이의 이면각은 59°였다.The lowest triplet excitation energy T 1 of the compound represented by Formula 6-3 was 3.3 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 2.2 eV. In addition, the back angle between the pyrazine ring and the partial structure adjacent to the pyrazine ring (benzene ring in this example) was 59 degrees.
또한, 상기 화학식 6-3으로 표시되는 화합물은 일본 특허 공개 제2004-292432호 공보에 기재된 방법에 의해 합성하였다.In addition, the compound represented by the said Chemical formula 6-3 was synthesize | combined by the method of Unexamined-Japanese-Patent No. 2004-292432.
<실시예 7><Example 7>
인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 하기 화학식 6-4로 표시되는 화합물의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.About a THF solution (0.05 weight%) of the phosphorescent compound (MC-1), about 5 times the weight of the THF solution (about 1 weight%) of the compound represented by following formula (6-4) was mixed. 10 microliters of the obtained solution was dripped at the slide glass, and it air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<화학식 6-4><Formula 6-4>
상기 화학식 6-4로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 3.4 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 2.0 eV였다. 또한, 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 벤젠환) 사이의 이면각은 62°였다.The lowest triplet excitation energy T 1 of the compound represented by Formula 6-4 was 3.4 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 2.0 eV. In addition, the back angle between the pyrazine ring and the partial structure adjacent to the pyrazine ring (benzene ring in this example) was 62 degrees.
또한, 상기 화학식 6-4로 표시되는 화합물은 일본 특허 공개 제2004-292432호 공보에 기재된 방법에 의해 합성하였다.In addition, the compound represented by the said Chemical formula 6-4 was synthesize | combined by the method of Unexamined-Japanese-Patent No. 2004-292432.
<실시예 8><Example 8>
인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 하기 화학식 6-5로 표시되는 화합물의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.About a THF solution (0.05 weight%) of the phosphorescent compound (MC-1), about 5 times the weight of the THF solution (about 1 weight%) of the compound represented by following formula (6-5) was mixed. 10 microliters of the obtained solution was dripped at the slide glass, and it air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<화학식 6-5><Formula 6-5>
상기 화학식 6-5로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 3.4 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 2.0 eV였다. 또한, 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 벤젠환) 사이의 이면각은 62°였다.The lowest triplet excitation energy T 1 of the compound represented by Formula 6-5 was 3.4 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 2.0 eV. In addition, the back angle between the pyrazine ring and the partial structure adjacent to the pyrazine ring (benzene ring in this example) was 62 degrees.
또한, 상기 화학식 6-5로 표시되는 화합물은 일본 특허 공개 제2004-292432호 공보에 기재된 방법에 의해 합성하였다.In addition, the compound represented by the said Chemical formula 6-5 was synthesize | combined by the method of Unexamined-Japanese-Patent No. 2004-292432.
<실시예 9>Example 9
인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 하기 화학식 6-6으로 표시되는 화합물의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.About a THF solution (0.05 weight%) of the phosphorescent compound (MC-1), about 5 times the weight of the THF solution (about 1 weight%) of the compound represented by following formula (6-6) was mixed. 10 microliters of the obtained solution was dripped at the slide glass, and it air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<화학식 6-6><Formula 6-6>
상기 화학식 6-6으로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 2.9 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 2.4 eV였다. 또한, 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 벤젠환) 사이의 이면각은 77°이고, 피라진환 이외의 2개의 환 구조 사이에서의 이면각은 89°였다.The lowest triplet excitation energy T 1 of the compound represented by Formula 6-6 was 2.9 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 2.4 eV. In addition, the back angle between the pyrazine ring and the partial structure adjacent to the pyrazine ring (benzene ring in this example) was 77 °, and the back angle between two ring structures other than the pyrazine ring was 89 °.
또한, 상기 화학식 6-6으로 표시되는 화합물은 일본 특허 공개 제2007-254456호 공보에 기재된 방법에 의해 합성하였다.In addition, the compound represented by the said Chemical formula 6-6 was synthesize | combined by the method of Unexamined-Japanese-Patent No. 2007-254456.
<실시예 10><Example 10>
인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 하기 화학식 6-7로 표시되는 화합물의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.To a THF solution (0.05 wt%) of the phosphorescent compound (MC-1), a THF solution (about 1 wt%) of a compound represented by the following formula (6-7) of about 5 times the weight was mixed. 10 microliters of the obtained solution was dripped at the slide glass, and it air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<화학식 6-7><Formula 6-7>
상기 화학식 6-7로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 3.3 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 1.5 eV였다.The lowest triplet excitation energy T 1 of the compound represented by Formula 6-7 was 3.3 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 1.5 eV.
<실시예 11><Example 11>
인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 하기 화학식 6-8로 표시되는 화합물의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μlFMF 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.About THF solution (0.05 weight%) of the phosphorescent compound (MC-1), about 5 times the weight of the THF solution (about 1 weight%) of the compound represented by following formula (6-8) was mixed. It dripped at 10 microliters FMF slide glass of the obtained solution, and air dried, and obtained the solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<화학식 6-8><Formula 6-8>
상기 화학식 6-8로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 3.6 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 2.0 eV였다.The lowest triplet excitation energy T 1 of the compound represented by Formula 6-8 was 3.6 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 2.0 eV.
<실시예 12><Example 12>
인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 하기 화학식 6-9로 표시되는 화합물의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.About THF solution (0.05 weight%) of the phosphorescent compound (MC-1), about 5 times the weight of the THF solution (about 1 weight%) of the compound represented by following formula (6-9) was mixed. 10 microliters of the obtained solution was dripped at the slide glass, and it air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<화학식 6-9><Formula 6-9>
상기 화학식 6-9로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 3.6 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 1.8 eV였다.The lowest triplet excitation energy T 1 of the compound represented by Formula 6-9 was 3.6 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 1.8 eV.
<실시예 13>Example 13
실시예 4에 있어서, 인광 발광성 화합물 (MC-1) 대신에 하기 인광 발광성 화합물 (MC-2)를 이용한 것 이외에는 실시예 4와 동일하게 하여, 용액을 제조하고, 자외선을 조사한 바, 인광 발광성 화합물 (MC-2, 아메리칸 다이소스사 제조, 상품명:ADS065BE)로부터의 청색 발광이 나타났다.In Example 4, a solution was prepared in the same manner as in Example 4 except that the following phosphorescent compound (MC-2) was used instead of the phosphorescent compound (MC-1), and the ultraviolet light was irradiated. Blue light emission from (MC-2, American Daisos Corporation, trade name: ADS065BE) was observed.
<실시예 14><Example 14>
실시예 5에 있어서, 인광 발광성 화합물 (MC-1) 대신에 하기 인광 발광성 화합물 (MC-2)를 이용한 것 이외에는 실시예 5와 동일하게 하여, 용액을 제조하고, 자외선을 조사한 바, 인광 발광성 화합물 (MC-2)로부터의 청색 발광이 나타났다.In Example 5, a solution was prepared in the same manner as in Example 5 except that the following phosphorescent compound (MC-2) was used instead of the phosphorescent compound (MC-1), and the ultraviolet ray was irradiated. Blue emission from (MC-2) appeared.
<실시예 15><Example 15>
실시예 6에 있어서, 인광 발광성 화합물 (MC-1) 대신에 하기 인광 발광성 화합물 (MC-2)를 이용한 것 이외에는 실시예 6과 동일하게 하여, 용액을 제조하고, 자외선을 조사한 바, 인광 발광성 화합물 (MC-2)로부터의 청색 발광이 나타났다.In Example 6, the solution was prepared in the same manner as in Example 6 except that the following phosphorescent compound (MC-2) was used instead of the phosphorescent compound (MC-1), and the ultraviolet ray was irradiated. Blue emission from (MC-2) appeared.
<실시예 16><Example 16>
실시예 7에 있어서, 인광 발광성 화합물 (MC-1) 대신에 하기 인광 발광성 화합물 (MC-2)를 이용한 것 이외에는 실시예 7과 동일하게 하여, 용액을 제조하고, 자외선을 조사한 바, 인광 발광성 화합물 (MC-2)로부터의 청색 발광이 나타났다.In Example 7, a solution was prepared in the same manner as in Example 7 except that the following phosphorescent compound (MC-2) was used instead of the phosphorescent compound (MC-1), and the ultraviolet ray was irradiated. Blue emission from (MC-2) appeared.
<실시예 17><Example 17>
실시예 8에 있어서, 인광 발광성 화합물 (MC-1) 대신에 하기 인광 발광성 화합물 (MC-2)를 이용한 것 이외에는 실시예 8과 동일하게 하여, 용액을 제조하고, 자외선을 조사한 바, 인광 발광성 화합물 (MC-2)로부터의 청색 발광이 나타났다.In Example 8, a solution was prepared in the same manner as in Example 8 except that the following phosphorescent compound (MC-2) was used instead of the phosphorescent compound (MC-1), and the ultraviolet ray was irradiated. Blue emission from (MC-2) appeared.
<실시예 18>Example 18
실시예 9에 있어서, 인광 발광성 화합물 (MC-1) 대신에 하기 인광 발광성 화합물 (MC-2)를 이용한 것 이외에는 실시예 9와 동일하게 하여, 용액을 제조하고, 자외선을 조사한 바, 인광 발광성 화합물 (MC-2)로부터의 청색 발광이 나타났다.In Example 9, a solution was prepared in the same manner as in Example 9 except that the following phosphorescent compound (MC-2) was used instead of the phosphorescent compound (MC-1), and the ultraviolet light was irradiated. Blue emission from (MC-2) appeared.
<실시예 19>Example 19
실시예 10에 있어서, 인광 발광성 화합물 (MC-1) 대신에 하기 인광 발광성 화합물 (MC-2)를 이용한 것 이외에는 실시예 10과 동일하게 하여, 용액을 제조하고, 자외선을 조사한 바, 인광 발광성 화합물 (MC-2)로부터의 청색 발광이 나타났다.In Example 10, a solution was prepared in the same manner as in Example 10 except that the following phosphorescent compound (MC-2) was used instead of the phosphorescent compound (MC-1), and the ultraviolet ray was irradiated. Blue emission from (MC-2) appeared.
<실시예 20>Example 20
실시예 11에 있어서, 인광 발광성 화합물 (MC-1) 대신에 하기 인광 발광성 화합물 (MC-2)를 이용한 것 이외에는 실시예 11과 동일하게 하여, 용액을 제조하고, 자외선을 조사한 바, 인광 발광성 화합물 (MC-2)로부터의 청색 발광이 나타났다.A solution was prepared in the same manner as in Example 11 except that the following phosphorescent compound (MC-2) was used in place of the phosphorescent compound (MC-1) and irradiated with ultraviolet light, and the phosphorescent compound was obtained. Blue emission from (MC-2) appeared.
<실시예 21>Example 21
실시예 12에 있어서, 인광 발광성 화합물 (MC-1) 대신에 하기 인광 발광성 화합물 (MC-2)를 이용한 것 이외에는 실시예 12와 동일하게 하여, 용액을 제조하고, 자외선을 조사한 바, 인광 발광성 화합물 (MC-2)로부터의 청색 발광이 나타났다.In Example 12, a solution was prepared in the same manner as in Example 12 except that the following phosphorescent compound (MC-2) was used instead of the phosphorescent compound (MC-1), and the ultraviolet ray was irradiated. Blue emission from (MC-2) appeared.
<실시예 24><Example 24>
대기 중, 2-아미노카프릴산 10.0 g(62.8 mmol), 에틸렌글리콜 100 ml를 투입하고, 200 ℃에서 가열하여 5시간 교반하였다. 반응 종료 후, 얻어진 반응 용액을 실온까지 냉각하여, 물 100 ml를 가하고, 석출한 고체를 여과하여, 디에틸에테르로 세정한 바, 하기 화학식으로 표시되는 3,6-디헥실디케토피페라진 8.46 g(수율: 44.52%)을 백색 고체로서 얻었다.In the air, 10.0 g (62.8 mmol) of 2-aminocaprylic acid and 100 ml of ethylene glycol were added, and heated at 200 ° C. and stirred for 5 hours. After the completion of the reaction, the obtained reaction solution was cooled to room temperature, 100 ml of water was added, and the precipitated solid was filtered and washed with diethyl ether, whereby 3,6-dihexyl diketopiperazine 8.46 represented by the following chemical formula was found. g (yield 44.52%) was obtained as a white solid.
아르곤 분위기하, 3,6-디헥실디케토피페라진 1.00 g(3.54 mmol)과 포스포릴옥시트리브로마이드 3.03 g(10.62 mmol)을 100 ℃로 가열하여, 15분간 교반하였다. 얻어진 혼합물을 클로로포름 200 mL에 용해한 후, 유기상을 수산화나트륨 수용액으로 세정하여, 분액 후, 유기상을 무수황산나트륨으로 건조하였다. 유기 용매를 감압 증류 제거 후, 조생성물을 얻었다. 본 조작을 3회 실시하여, 얻어진 조생성물을 합하여, 실리카 겔 크로마토그래피(톨루엔/헥산=2/1)로 정제한 바, 하기 화학식으로 표시되는 2-브로모-3,6-디헥실피라진 2.00 g(수율: 57.9%)을 오일로서 얻었다.Under argon atmosphere, 1.00 g (3.54 mmol) of 3,6-dihexyl diketopiperazine and 3.03 g (10.62 mmol) of phosphoryloxytribromide were heated to 100 ° C. and stirred for 15 minutes. The resulting mixture was dissolved in 200 mL of chloroform, and then the organic phase was washed with an aqueous sodium hydroxide solution, followed by separation, and then the organic phase was dried over anhydrous sodium sulfate. After distilling off the organic solvent under reduced pressure, a crude product was obtained. The crude product obtained by performing this operation three times was combined and purified by silica gel chromatography (toluene / hexane = 2/1). 2-bromo-3,6-dihexylpyrazine 2.00 represented by the following chemical formula g (yield: 57.9%) was obtained as an oil.
아르곤 분위기하, 2,7-비스(1,3,2-디옥사보롤란-2-일)-9,9-디옥틸플루오렌 0.119 g(0.5 mmol), 2-브로모-3,6-디헥실피라진 0.360 g(1.1 mmol), 테트라키스트리페닐포스핀팔라듐(12 mg, 0.01 mmol), 아르곤으로 탈기한 톨루엔 2.4 ml, 및 아르곤으로 탈기한 17.5 중량% 수용액 1.3 ml를 투입하였다. 가열 환류하여, 11시간 교반하였다. 얻어진 혼합물에 톨루엔 10 mL를 투입, 유기상을 이온 교환수로 세정하고, 분액 후, 유기상을 무수황산나트륨으로 건조하였다. 유기 용매를 감압 증류 제거 후, 조생성물 0.432 g의 황색 오일을 얻었다. 얻어진 조생성물을 실리카 겔 크로마토그래피(아세트산에틸/헥산=7/93)로 정제한 바, 하기 화학식 6-10으로 표시되는 화합물 43.7 mg(수율: 9.9%)을 엷은 황색 오일로서 얻었다.Under argon atmosphere, 0.119 g (0.5 mmol) of 2,7-bis (1,3,2-dioxaborolan-2-yl) -9,9-dioctylfluorene, 2-bromo-3,6- 0.360 g (1.1 mmol) of dihexylpyrazine, tetrakistriphenylphosphinepalladium (12 mg, 0.01 mmol), 2.4 ml of toluene degassed with argon, and 1.3 ml of a 17.5 wt% aqueous solution degassed with argon were added. The mixture was heated to reflux and stirred for 11 hours. 10 mL of toluene was added to the obtained mixture, the organic phase was washed with ion-exchanged water, and after separating, the organic phase was dried over anhydrous sodium sulfate. After distilling off the organic solvent under reduced pressure, 0.432 g of a yellow oil was obtained. The resulting crude product was purified by silica gel chromatography (ethyl acetate / hexane = 7/93) to give 43.7 mg (yield: 9.9%) of the compound represented by the following formula (6-10) as a pale yellow oil.
<화학식 6-10><Formula 6-10>
<실시예 25><Example 25>
스퍼터법에 의해 150 nm의 두께로 ITO막을 붙인 유리 기판에 폴리(3,4)에틸렌디옥시티오펜/폴리스티렌술폰산(Bayer 제조, 상품명: BaytronP AI4083)의 현탁액을 정공 주입층으로서 스핀 코팅에 의해 65 nm의 두께로 성막하여, 핫플레이트 상에서 200 ℃, 10분간 건조하였다. 다음으로, 상기에서 얻은 화합물 (6-10)을 크실렌에 용해시키고, 농도 3.5 중량%로 하였다. 또한, 인광 발광 재료로서 인광 발광성 화합물 (MC-1)도 크실렌에 용해시키고, 농도 3.5 중량%로 하였다. 또한, 상기에서 얻은 화합물 (6-10)과 인광 발광성 화합물 (MC-1)을 중량비로 70/30이 되도록 혼합한 용액을 제조하였다. 이 혼합 용액을 상기 정공 주입층 상에 1200 rpm에서 스핀 코팅하였다. 이 발광층의 막 두께는 대개 80 nm였다. 그 후, 수분 농도 및 산소 농도가 10 ppm 이하의 질소 분위기하에 있어서 90 ℃ 10분간 건조한 후, 음극으로서, 바륨을 약 5 nm, 다음으로 알루미늄을 약 100 nm 증착하여, EL 소자를 제조하였다. 소자 구성은 ITO/Baytron P(65 nm)/(화합물 (6-10)/인광 발광성 화합물 (MC-1)=70/30(80 nm))/Ba/Al이 된다. 또한, 진공도가 1×10-4 Pa 이하에 도달한 후, 금속의 증착을 개시하였다.65 nm by spin coating a hole injection layer using a suspension of poly (3,4) ethylenedioxythiophene / polystyrenesulfonic acid (manufactured by Bayer, trade name: BaytronP AI4083) on a glass substrate having a thickness of 150 nm by sputtering method. It was formed into a film with a thickness of and dried at 200 ° C. for 10 minutes on a hot plate. Next, the compound (6-10) obtained above was dissolved in xylene, and the concentration was 3.5% by weight. In addition, the phosphorescent compound (MC-1) was also dissolved in xylene as a phosphorescent material, and the concentration was 3.5% by weight. In addition, a solution was prepared in which the compound (6-10) obtained above and the phosphorescent compound (MC-1) were mixed in a weight ratio of 70/30. This mixed solution was spin coated on the hole injection layer at 1200 rpm. The film thickness of this light emitting layer was usually 80 nm. Then, after drying for 10 minutes at 90 degreeC in nitrogen atmosphere whose water concentration and oxygen concentration are 10 ppm or less, about 5 nm of barium and then about 100 nm of aluminum were vapor-deposited as a cathode, and the EL element was manufactured. The device configuration is ITO / Baytron P (65 nm) / (Compound (6-10) / Phosphorescent Compound (MC-1) = 70/30 (80 nm)) / Ba / Al. Further, after the degree of vacuum reached 1 × 10 −4 Pa or less, vapor deposition of the metal was started.
얻어진 소자에 전압을 인가한 바, 인광 발광성 화합물 (MC-1) 유래의 피크 파장 520 nm의 녹색 발광을 나타내었다. 이 소자의 최대 발광 효율은 1.80 cd/A였다.When voltage was applied to the obtained device, green light emission with a peak wavelength of 520 nm derived from the phosphorescent compound (MC-1) was shown. The maximum luminous efficiency of this device was 1.80 cd / A.
상기 화학식 6-10으로 표시되는 화합물의 최저 삼중항 여기 에너지 T1은 3.0 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO는 1.9 eV였다. 또한, 피라진환과 상기 피라진환에 인접하는 부분 구조(본 실시예에서는 벤젠환) 사이의 이면각은 61°였다.The lowest triplet excitation energy T 1 of the compound represented by Formula 6-10 was 3.0 eV, and the absolute value E LUMO of the energy level of the lowest boiling point molecular orbit was 1.9 eV. In addition, the back angle between the pyrazine ring and the partial structure adjacent to the pyrazine ring (benzene ring in this example) was 61 degrees.
<실시예 26>Example 26
상기 화합물 (6-10) 및 인광 발광성 화합물 (MC-1)을 포함하는 상기 혼합 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.10 µl of the mixed solution containing the compound (6-10) and the phosphorescent compound (MC-1) was added dropwise to the slide glass and air dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
<비교예 1>Comparative Example 1
상기 화학식으로 표시되는 고분자 (CP-4)의 n=∞에 있어서의 외삽치인 최저 삼중항 여기 에너지 T1(1/n=0)은 2.6 eV이고, 최저 비점 분자 궤도의 에너지 레벨의 절대값 ELUMO(1/n=0)는 2.1 eV였다. 계산에는 하기의 간략화한 반복 단위 (CM-4)를 이용하였다. 하기 화학식 (CM-4)로 표시되는 인접하는 반복 단위 사이의 이면각은 45°였다.The lowest triplet excitation energy T 1 (1 / n = 0), which is an extrapolation at n = ∞ of the polymer represented by the above formula (CP-4), is 2.6 eV, and is the absolute value E of the energy level of the lowest boiling point molecular orbit. LUMO (1 / n = 0) was 2.1 eV. The following simplified repeating unit (CM-4) was used for the calculation. The back angle between adjacent repeating units represented by the following formula (CM-4) was 45 °.
고분자 (CP-4)와 인광 발광성 화합물을 포함하는 조성물을 이용하여 발광 소자를 제조하면, 실시예 1 내지 3에서 제조한 발광 소자에 비교하여, 발광 효율이 떨어지는 것을 확인할 수 있다.When the light emitting device is manufactured using the composition containing the polymer (CP-4) and the phosphorescent compound, it can be confirmed that the luminous efficiency is inferior as compared with the light emitting devices prepared in Examples 1 to 3.
<비교예 2>Comparative Example 2
스퍼터법에 의해 150 nm의 두께로 ITO막을 붙인 유리 기판에 폴리(3,4)에틸렌디옥시티오펜/폴리스티렌술폰산(Bayer 제조, 상품명: BaytronP AI4083)의 현탁액을 정공 주입층으로서 스핀 코팅에 의해 65 nm의 두께로 성막하여, 핫플레이트 상에서 200 ℃, 10분간 건조하였다. 다음으로, 화합물 (CP-4)를 크실렌에 용해시키고, 농도 1.0 중량%로 하였다. 또한, 인광 발광 재료로서 인광 발광성 화합물 (MC-1)도 크실렌에 용해시키고, 농도 1.0 중량%로 하였다. 또한, 상기에서 얻은 화합물 (CP-4)와 인광 발광성 화합물 (MC-1)을 중량비로 70/30이 되도록 혼합한 용액을 제조하였다. 이 혼합 용액을 상기 정공 주입층 상에 800 rpm에서 스핀 코팅하였다. 이 발광층의 막 두께는 70 nm였다. 그 후, 수분 농도 및 산소 농도가 10 ppm 이하의 질소 분위기하에 있어서 90 ℃ 10분간 건조한 후, 음극으로서 바륨을 약 5 nm, 다음으로 알루미늄을 약 100 nm 증착하여, 유기 EL 소자를 제조하였다. 소자 구성은 ITO/Baytron P(65 nm)/(화합물 (CP-4)/인광 발광성 화합물 (MC-1)=70/30(70 nm))/Ba/Al이 된다. 또한 진공도가 1×10-4 Pa 이하에 도달한 후, 금속의 증착을 개시하였다.65 nm by spin coating a hole injection layer using a suspension of poly (3,4) ethylenedioxythiophene / polystyrenesulfonic acid (manufactured by Bayer, trade name: BaytronP AI4083) on a glass substrate having a thickness of 150 nm by sputtering method. It formed into a film at the thickness of and dried at 200 degreeC for 10 minutes on the hotplate. Next, the compound (CP-4) was dissolved in xylene, and the concentration was 1.0% by weight. In addition, the phosphorescent compound (MC-1) was also dissolved in xylene as a phosphorescent material to have a concentration of 1.0% by weight. In addition, a solution was prepared in which the compound (CP-4) obtained above and the phosphorescent compound (MC-1) were mixed in a weight ratio of 70/30. This mixed solution was spin coated on the hole injection layer at 800 rpm. The film thickness of this light emitting layer was 70 nm. Then, after drying for 10 minutes at 90 degreeC in nitrogen atmosphere whose water concentration and oxygen concentration are 10 ppm or less, about 5 nm of barium and then about 100 nm of aluminum were vapor-deposited as a cathode, and the organic electroluminescent element was produced. The device configuration is ITO / Baytron P (65 nm) / (Compound (CP-4) / Phosphorescent Compound (MC-1) = 70/30 (70 nm)) / Ba / Al. Further, after the degree of vacuum reached 1 × 10 −4 Pa or less, vapor deposition of the metal was started.
얻어진 소자에 전압을 인가한 바, CP-4 유래의 피크 파장 440 nm 및 MC-1 유래의 520 nm가 동시에 관측되었다. 이 소자의 최대 발광 효율은 0.34 cd/A였다. 화합물 (CP-4)는 US6512083호 공보 기재의 방법으로 합성하였다.When voltage was applied to the obtained device, peak wavelengths of 440 nm derived from CP-4 and 520 nm derived from MC-1 were simultaneously observed. The maximum luminous efficiency of this device was 0.34 cd / A. Compound (CP-4) was synthesized by the method described in US Pat.
<비교예 3>Comparative Example 3
상기 화합물 (CP-4) 및 인광 발광성 화합물 (MC-1)을 포함하는 상기 혼합 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 화합물 (CP-4)로부터의 발광에 비교하여 어두워지고, 색의 차이가 거의 나타나지 않았다.10 μl of the mixed solution containing the compound (CP-4) and the phosphorescent compound (MC-1) was added dropwise to the slide glass and air dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, it became dark compared with the light emission from the said compound (CP-4), and the color difference was hardly seen.
<참고예><Reference Example>
상기 화합물 (CP-4)의 크실렌 용액(농도 1.0 중량%) 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 화합물 (CP-4)로부터의 밝은 청색 발광을 확인하였다.10 microliters of xylene solutions (concentration 1.0 wt%) of the said compound (CP-4) were dripped at the slide glass, and air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, the bright blue light emission from the said compound (CP-4) was confirmed.
<실시예 27>Example 27
1,4-디메틸-2,5-디(4',4',5',5'-테트라메틸[1',3',2']디옥사보롤란-2'-일)벤젠 300 mg과 2,5-디브로모피라진 452 mg과 탄산나트륨 267 mg과 소량의 비스(트리페닐포스핀)팔라듐(II)디클로라이드를 아르곤 기류하에서 테트라히드로푸란 7 mL에 용해하여, 물 4 mL을 가하고 약 70 ℃에서 약 3시간 교반한 후, 물로 세정하여 클로로포름으로 추출하였다. 추출액으로부터 중합체를 분리하였다.300 mg of 1,4-dimethyl-2,5-di (4 ', 4', 5 ', 5'-tetramethyl [1', 3 ', 2'] dioxaborolan-2'-yl) benzene 452 mg of 2,5-dibromopyrazine, 267 mg of sodium carbonate, and a small amount of bis (triphenylphosphine) palladium (II) dichloride were dissolved in 7 mL of tetrahydrofuran under an argon stream, 4 mL of water was added, and about 70 After stirring for 3 hours at ℃, washed with water and extracted with chloroform. The polymer was separated from the extract.
인광 발광성 화합물 (MC-1)의 THF 용액(0.05 중량%)에 대하여, 약 5배 중량의 상기 중합체의 THF 용액(약 1 중량%)을 혼합하였다. 얻어진 용액 10 μl를 슬라이드 유리에 적하하고 풍건하여 고체막을 얻었다. 이것에, 365 nm의 자외선을 조사한 바, 상기 인광 발광성 화합물 (MC-1)로부터의 녹색 발광이 나타났다.About 5 times the weight of THF solution (about 1 weight%) of the said polymer was mixed with respect to THF solution (0.05 weight%) of the phosphorescent compound (MC-1). 10 microliters of the obtained solution was dripped at the slide glass, and it air-dried to obtain a solid film. When the ultraviolet-ray of 365 nm was irradiated to this, green light emission from the said phosphorescent compound (MC-1) appeared.
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2007
- 2007-12-21 JP JP2007329888A patent/JP5504563B2/en active Active
- 2007-12-27 EP EP07860290A patent/EP2103653A4/en not_active Ceased
- 2007-12-27 TW TW096150460A patent/TW200837170A/en unknown
- 2007-12-27 CN CN200780050326.3A patent/CN101611092B/en active Active
- 2007-12-27 US US12/521,266 patent/US20100038592A1/en not_active Abandoned
- 2007-12-27 WO PCT/JP2007/075068 patent/WO2008081852A1/en active Application Filing
- 2007-12-27 KR KR1020097015589A patent/KR20090101954A/en not_active Application Discontinuation
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US10873033B2 (en) | 2014-04-09 | 2020-12-22 | Samsung Sdi Co., Ltd. | Organic compound, composition, organic optoelectronic diode, and display device |
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Also Published As
Publication number | Publication date |
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CN101611092A (en) | 2009-12-23 |
CN101611092B (en) | 2014-04-16 |
EP2103653A4 (en) | 2010-10-06 |
TW200837170A (en) | 2008-09-16 |
JP2008182216A (en) | 2008-08-07 |
WO2008081852A1 (en) | 2008-07-10 |
EP2103653A1 (en) | 2009-09-23 |
US20100038592A1 (en) | 2010-02-18 |
JP5504563B2 (en) | 2014-05-28 |
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