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KR20090001079A - Method of forming fine pattern of semiconductor device - Google Patents

Method of forming fine pattern of semiconductor device Download PDF

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Publication number
KR20090001079A
KR20090001079A KR1020070065179A KR20070065179A KR20090001079A KR 20090001079 A KR20090001079 A KR 20090001079A KR 1020070065179 A KR1020070065179 A KR 1020070065179A KR 20070065179 A KR20070065179 A KR 20070065179A KR 20090001079 A KR20090001079 A KR 20090001079A
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South Korea
Prior art keywords
film
exposure
semiconductor device
acrylamide
forming
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KR1020070065179A
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Korean (ko)
Inventor
이성구
정재창
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주식회사 하이닉스반도체
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Priority to KR1020070065179A priority Critical patent/KR20090001079A/en
Publication of KR20090001079A publication Critical patent/KR20090001079A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a method of forming a fine pattern of a semiconductor device, the method comprising sequentially forming an amorphous carbon film, a hard mask film, an organic antireflection film and a photoresist film on a semiconductor substrate, and comprising a basic compound on the photoresist film Forming a top coating layer by applying a top coating composition, performing a first exposure process on the photoresist film, forming a first exposure region, and performing a second exposure process on the photoresist film Forming a second exposure region in the exposure region and the first exposure region, and performing the development process to remove the first exposure region and the second exposure region.

Description

Method of forming a fine pattern of a semiconductor device {Method of Forming Fine Pattern of Semiconductor Device}

1A to 1H are cross-sectional views showing a method for forming a fine pattern of a semiconductor device according to the prior art.

2A to 2E are cross-sectional views showing a method for forming a fine pattern of a semiconductor device according to the present invention.

<Description of Symbols for Major Parts of Drawings>

10,110 semiconductor substrate 12,112 amorphous carbon film

12a: amorphous carbon film pattern 14,18,114 silicon oxynitride film

14a, 18a, 114a: silicon oxynitride film pattern 16, 20 polysilicon film

16a, 20a: polysilicon film pattern 22: first organic antireflection film

22a: first organic antireflection film pattern 24: first photoresist pattern

26: second organic antireflection film 26a: second organic antireflection film pattern

28: second photoresist pattern 116: organic antireflection film

116a organic antireflection film pattern 118 photoresist film

118a: photoresist pattern 120: top coating film

130: first exposure area 140: second exposure area

The present invention relates to a method for forming a fine pattern of a semiconductor device, and to a method of forming a fine pattern using a double exposure process in order to overcome the limitations of exposure equipment in a semiconductor device manufacturing process.

BACKGROUND With the rapid spread of information media such as computers, semiconductor devices are also rapidly developing. In terms of its function, the semiconductor device must operate at high speed and have a large storage capacity. In order to meet these demands, development of process equipment or process technology for manufacturing semiconductor devices having low manufacturing costs, improved integration, reliability, and electrical characteristics accessing data is urgently required.

Photolithography is one of the ways to improve the device integration. The photolithography technique uses an exposure technique using a short wavelength chemically amplified deep ultra violet (DUV) light source such as ArF (193 nm) or VUV (157 nm), and a photoresist material suitable for the exposure source. It is a technique of forming a fine pattern.

As the size of semiconductor devices becomes smaller and smaller, controlling the critical dimension of the pattern line width becomes an important problem when applying the photolithography technique. In general, the speed of a semiconductor device is faster as the critical dimension of the pattern line width, that is, the size of the pattern line is smaller, and the performance of the device is also improved.

However, due to the limitation of photolithography technology using ArF exposure equipment having a numerical aperture of 1.2 or less, it is difficult to form a line and space pattern of 40 nm or less in a single exposure process.

Therefore, before the next generation of EUV exposure technology, a first pattern having a line width twice as large as the pattern line width is formed as part of the resolution enhancement and process margin expansion of the photolithography technology, and then the same line width period is formed between the first patterns. A double exposure process technology for forming two patterns has been developed and currently applied to a semiconductor device mass production process.

On the other hand, since the double exposure process uses two different masks for patterning, the manufacturing cost and the time-to-efficiency are lower than the patterning technique using one mask, and thus the production rate is lowered. In addition, when forming a pattern having a pitch smaller than the resolution limit of the exposure equipment in the cell region, there are various disadvantages such as overlapping the processed image to obtain a pattern of a desired shape, and overlay misalignment occurs during alignment.

Currently, the biggest issue that needs to be addressed in the double exposure process is the overlay problem, which is difficult to fundamentally solve in the exposure equipment makers. Therefore, some improvement is expected in the next-generation exposure equipment. It is a necessary situation.

In order to alleviate this drawback, double exposure and double etching techniques have been developed and are currently being applied to semiconductor device mass production processes.

1A to 1H are cross-sectional views illustrating a method for forming a fine pattern of a semiconductor device according to the prior art, and illustrate a method of forming a fine pattern by a double exposure and a double etching technique.

Referring to FIG. 1A, an amorphous carbon film 12, a silicon oxynitride film 14, a polysilicon film 16, a silicon oxynitride film 18, a polysilicon film 20, and a first organic layer may be formed on a semiconductor substrate 10. After the antireflection film 22 is sequentially formed, the first photoresist pattern 24 is formed on the first organic antireflection film 22.

Referring to FIG. 1B, the first organic antireflection film 22 and the polysilicon film 20 are patterned using the first photoresist pattern 24 as an etching mask to form a first organic antireflection film pattern 22a and The polysilicon film pattern 20a is formed.

Referring to FIG. 1C, after removing the first organic antireflection film pattern 22a and the first photoresist pattern 24, a second organic antireflection film 26 is formed on the entire surface of the polysilicon film pattern 20a. The second photoresist pattern 28 is formed on the second organic antireflection film 26.

Referring to FIG. 1D, the second organic resistive film pattern 26a and the second photoresist pattern 28 are stacked between the polysilicon film patterns 20a using the second photoresist pattern 28 as an etching mask. To form.

1E to 1H, the silicon oxynitride layer 18 is formed by using the polysilicon layer pattern 20a, the second organic antireflective layer pattern 26a, and the second photoresist pattern 28 as a etch mask. Is patterned to form the silicon oxynitride film pattern 18a. Then, similarly, the lower layers are sequentially patterned using the patterns obtained in the previous step as an etching mask.

In this case, since the double exposure and double etching processes use two types of masks, a pattern having a desired resolution may be formed. However, since the exposure and etching processes are repeatedly performed, process steps are complicated, manufacturing time and cost In addition to the increase, damage and thickness reduction occur when removing the photoresist pattern, and there are many problems to be technically solved, such as the development of an optimized process for each layer.

The present invention is to solve the problems of the prior art, after forming a top coating film containing a basic compound on the photoresist film, and after performing the first exposure process, the second exposure process immediately without a separate etching process It is an object of the present invention to provide a method for forming a fine pattern of a semiconductor device capable of forming a desired fine pattern.

In order to achieve the above object, the present invention provides a method for forming a fine pattern of a semiconductor device comprising the following steps:

Sequentially forming an amorphous carbon film, a hard mask film, an organic antireflection film, and a photoresist film on a semiconductor substrate;

Forming a top coating film by coating a top coating composition including a basic compound on the photoresist film;

Performing a first exposure process on the photoresist film to form a first exposure region;

Performing a second exposure process on the photoresist film to form a second exposure region between the first exposure region and the first exposure region;

Performing a developing process to remove the first exposure area and the second exposure area.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

2A to 2E are cross-sectional views illustrating a method for forming a fine pattern of a semiconductor device according to the present invention.

Referring to FIG. 2A, an amorphous carbon film 112, a silicon oxynitride film 114, an organic antireflection film 116, and a photoresist film 118 are sequentially formed on the semiconductor substrate 110, and then a photoresist film ( The top coating layer 120 is formed on the 118.

The silicon oxynitride film 114 may be formed of a silicon nitride film, a silicon oxide film, or a silicon oxynitride film and a laminated film including one or more thereof as a hard mask film.

The top coating layer 120 is a base resin, a top coating composition comprising a polymer, a basic compound and an organic solvent containing a repeating unit of the following formula (1) is applied to a thickness of 500 to 1000Å and then 60 at a temperature of 70 to 100 ℃ Baked for 90 seconds to form.

[Formula 1]

Figure 112007047724814-PAT00001

Wherein R 1 and R 2 Is hydrogen, fluorine, methyl or fluoromethyl, R 3 represents a hydrocarbon of 1 to 10 carbon atoms or a hydrocarbon of 1 to 10 carbon atoms in which some of the hydrogen is substituted with fluorine, and a, b, c are mole fractions of each monomer. , 0.05 to 0.9, respectively, and the weight average molecular weight is 1,000 to 1,000,000.)

The basic compound is present in the top coating film and serves to neutralize the acid generated during the subsequent exposure process, and it is preferable to use an amine compound or an amide compound. The basic compound is preferably used in a ratio of 0.01 to 0.5% by weight relative to the total weight of the top coating composition, if less than 0.01% by weight can not properly perform the role of neutralizing the acid, more than 0.5% by weight Use is undesirable because a T-top profile is obtained.

As the amine compound, at least one selected from the group consisting of triethanol amine, triethylamine, triisobutylamine, triisooctylamine, triisodecylamine and diethanolamine is preferably used, and triethanol amine is particularly preferable. .

Examples of the amide compound include N-isopropyl acrylamide, N, N-dimethyl acrylamide, N, N-diethyl acrylamide, N, N-dipropyl acrylamide, N-ethyl-Nn-butyl acrylamide, N, At least selected from the group consisting of N-dimethyl methacrylamide, N, N-diethyl methacrylamide, N, N-dipropyl methacrylamide, N-methyl acrylamide, N-ethyl acrylamide and Nn-propyl acrylamide Preference is given to using one, with N-isopropyl acrylamide being particularly preferred.

In addition, as a preferable example for the repeating unit of Formula 1, poly (t-butylacrylate-methacrylic acid-2,2,3,4,4,4-hexafluorobutyl methacrylate) of Formula 2 or the following Formula 3 poly (t-butyl acrylate-2- (trifluoromethyl) acrylic acid-trifluoroacrylic acid-2,2,3,4,4,4-hexafluorobutyl methacrylate).

[Formula 2]

Figure 112007047724814-PAT00002

(In the above formula, R 1 and R 2 represent a methyl group, and a, b, and c represent 0.05 to 0.9, respectively, as a mole fraction of each monomer.)

[Formula 3]

Figure 112007047724814-PAT00003

(In the above formula, R 1 represents a methyl group, and a, b, and c represent 0.05 to 0.9, respectively, as a mole fraction of each monomer.)

Referring to FIG. 2B, a first exposure region 130 is formed on the photoresist layer 118 by performing a first exposure process using a first exposure mask at an exposure energy of 20 to 45 mJ / cm 2 .

The first exposure process may use an exposure source selected from the group consisting of KrF (248 nm), ArF (193 nm), VUV (157 nm), EUV (13 nm), E-beam, X-ray and ion beam.

In this case, an acid (H + ) is generated from the photoacid generator in the photoresist film 118 in the first exposure area 130 by the first exposure process, and the generated acid (H + ) is the top coating film 120. Neutralized by an amine compound or an amide compound present in

Referring to FIG. 2C, a second exposure process using a second exposure mask is performed on the resultant with an exposure energy of 20 to 45 mJ / cm 2 , thereby between the first exposure area 130 and the first exposure area 130. The second exposure area 140 is formed in the photoresist film 118.

The second exposure process may use an exposure source selected from the group consisting of KrF (248 nm), ArF (193 nm), VUV (157 nm), EUV (13 nm), E-beam, X-ray and ion beam.

When the second exposure process is performed, the semiconductor substrate 110 may be replaced by only a mask on the stage where the first exposure process is performed, instead of being replaced on another stage.

In this case, acid (H + ) is generated from the photoacid generator in the photoresist film 118 in the second exposure area 140 by the second exposure process, and the generated acid (H + ) is also the top coating film 120. Since it is neutralized by an amine compound or an amide compound present in), the exposure intensity in the first exposure region 130 and the exposure intensity in the second exposure region 140 do not interfere with each other.

FIG. 3 illustrates that when the top coating layer 120 is applied on the photoresist layer 118 according to the present invention, the first exposure process and the second exposure process are sequentially performed. It is a graph which shows the state in which the exposure intensity by an exposure process does not interfere with each other.

On the other hand, FIG. 4 shows the exposure intensity by the first exposure process as a result of sequentially performing the first exposure process and the second exposure process directly on the photoresist film 118 without applying the top coating film 120 according to the present invention. It is a graph which shows the state in which the exposure intensity by a 2nd exposure process mutually interferes.

Referring to FIG. 2D, the resultant having the first exposure region 130 and the second exposure region 140 is post-baked at a temperature of 90 to 130 ° C. for 60 to 90 seconds, and then a 2.38 wt% aqueous solution of TMAH as a developer is used. By using the development process, the top coating layer 120 having the property of dissolving in alkali, the first exposure region 130 and the second exposure region 140 are removed to form a positive type photoresist pattern 118a. do.

This is because the photoresist composition of the positive type is used to form the photoresist film 118, so that the decomposition of the photoresist in the first exposure region 130 and the second exposure region 140 in which the acid (H + ) is present is prevented. Because it occurs, it is used to dissolve in an alkaline developer.

Therefore, if the negative type photoresist composition is used to form the photoresist film 118, the crosslinking reaction of the photoresist in the first exposure region 130 and the second exposure region 140 in which acid (H + ) is present is performed. In this case, the first exposure region 130 and the second exposure region 140 are not dissolved in the alkaline developer, and the unexposed regions are dissolved in the alkaline developer, whereby a negative type photoresist pattern 118a can be formed. do.

Next, the organic antireflection film 116 is patterned using the photoresist pattern 118a as an etching mask to form the organic antireflection film pattern 116a.

Referring to FIG. 2E, the lower silicon oxynitride layer 114 is patterned using the organic anti-reflective layer pattern 116a as an etch mask to form the silicon oxynitride layer pattern 114a.

The line width of the final silicon oxynitride film pattern 114a thus obtained has a size that is about 1/2 less than the line width between the first exposure regions 130 or the line width between the second exposure regions 140.

Hereinafter, the present invention will be described in detail by way of examples. However, the following examples are provided for the purpose of illustration, and those skilled in the art will be able to make various modifications, changes, substitutions and additions through the spirit and scope of the appended claims, and such modifications and changes may be made to the following claims. It should be seen as belonging.

Example 1 Preparation of Top Coating Composition of the Present Invention (1)

1 g of poly (t-butyl acrylate-methacrylic acid-2,2,3,4,4,4-hexafluorobutyl methacrylate) of Formula 2 and 0.04 g of triethanol amine were 4-methyl-2-pentanol Dissolved in 50g to prepare a top coating composition of the present invention.

Example 2 Preparation of Top Coating Composition of the Present Invention (2)

1 g of poly (t-butyl acrylate-2- (trifluoromethyl) acrylic acid-trifluoroacrylic acid-2,2,3,4,4,4-hexafluorobutyl methacrylate) of Formula 3; 0.04 g of N-isopropyl acrylamide was dissolved in 50 g of 4-methyl-2-pentanol to prepare a top coating composition of the present invention.

Example 3 Preparation of the Fine Pattern of the Present Invention (1)

An amorphous carbon film, a silicon oxynitride film, an organic antireflection film, and a photoresist film were sequentially formed on the wafer, and then a top coating film was formed by applying the top coating composition prepared in Example 1 on the photoresist film.

Next, the resultant was exposed to an exposure energy of 35 mJ / cm 2 using a first exposure mask having an 80 nm half pitch to form a first exposure region in the photoresist film.

Next, on the stage where the first exposure process is performed, the resultant is exposed to an exposure energy of 35 mJ / cm 2 by using a second exposure mask having an 80 nm half pitch to the first exposure area and the first exposure area. After forming a second exposure region in the photoresist film in between, it was post-baked at 100 ℃ for 60 seconds, and then developed with a 2.38 wt% aqueous solution of TMAH to obtain a photoresist pattern having a size of 40 nm.

Example 4 Preparation of Fine Patterns of the Invention (2)

A photoresist pattern of 40 nm size was obtained in the same manner as in Example 3, except that the top coating composition prepared in Example 2 was used.

As described above, according to the present invention, in forming a fine pattern by performing a double exposure process, by applying a top coating film containing a basic compound on the photoresist film, there is no separate etching process after performing the first exposure process Even if the second exposure process is performed immediately, the problem of overlay misalignment is solved because the exposure intensities between the exposure processes do not interfere with each other, and the process step is simplified because the etching process only needs to be performed once. Margins can also be improved to reduce costs, such as reducing new investment.

Claims (10)

Sequentially forming an amorphous carbon film, a hard mask film, an organic antireflection film, and a photoresist film on a semiconductor substrate; Forming a top coating film by applying a top coating composition including a basic compound on the photoresist film; Performing a first exposure process on the photoresist film to form a first exposure region; Performing a second exposure process on the photoresist film to form a second exposure region between the first exposure region and the first exposure region; And removing the first exposure area and the second exposure area by performing a developing process. The method of claim 1, The basic compound is an amine compound or an amide compound, characterized in that the fine pattern forming method of a semiconductor device. The method of claim 2, Wherein said amine compound is selected from the group consisting of triethanol amine, triethylamine, triisobutylamine, triisooctylamine, triisodecylamine, diethanolamine, and combinations thereof. The method of claim 2, The amide compound is N-isopropyl acrylamide, N, N-dimethyl acrylamide, N, N-diethyl acrylamide, N, N-dipropyl acrylamide, N-ethyl-Nn-butyl acrylamide, N, N Dimethyl methacrylamide, N, N-diethyl methacrylamide, N, N-dipropyl methacrylamide, N-methyl acrylamide, N-ethyl acrylamide, Nn-propyl acrylamide and combinations thereof The fine pattern forming method of a semiconductor device, characterized in that selected from. The method of claim 1, The top coating composition is a method of forming a fine pattern of a semiconductor device comprising a polymer comprising a repeating unit of the formula (1) as a base resin. [Formula 1]
Figure 112007047724814-PAT00004
 Where R 1 , R 2 Is hydrogen, fluorine, methyl or fluoromethyl, R 3 represents a hydrocarbon having 1 to 10 carbon atoms or a hydrocarbon having 1 to 10 carbon atoms in which some of hydrogen is substituted with fluorine, a, b, c are mole fractions of each monomer, and represent 0.05 to 0.9, respectively. The weight average molecular weight is 1,000 to 1,000,000. The method of claim 5, wherein The repeating unit is a poly (t-butyl acrylate-methacrylic acid-2,2,3,4,4,4-hexafluorobutyl methacrylate) of the formula 2 to form a fine pattern of a semiconductor device Way: [Formula 2]
Figure 112007047724814-PAT00005
 Where R 1 and R 2 represent a methyl group, a, b, and c are the mole fractions of each monomer, and represent 0.05 to 0.9, respectively. The method of claim 5, wherein The repeating unit is poly (t-butylacrylate-2- (trifluoromethyl) acrylic acid-trifluoroacrylic acid-2,2,3,4,4,4-hexafluorobutyl methacrylate of the following Chemical Formula 3 Method for forming a fine pattern of a semiconductor device, characterized in that: [Formula 3]
Figure 112007047724814-PAT00006
 Where R 1 represents a methyl group, a, b, and c are the mole fractions of each monomer, and represent 0.05 to 0.9, respectively. The method of claim 1, The basic compound is a fine pattern forming method of a semiconductor device, characterized in that used in a ratio of 0.01 to 0.5% by weight relative to the total weight of the top coating composition. The method of claim 1, The hard mask film may be a silicon nitride film, a silicon oxide film, a silicon oxynitride film, and a laminate film including one or more thereof. The method of claim 1, And the first exposure process and the second exposure process are performed on the same stage.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101859065A (en) * 2009-04-07 2010-10-13 国际商业机器公司 Alleviate the method for the resist pattern critical change in size in the double-exposure technology
US8685865B2 (en) 2011-10-11 2014-04-01 Samsung Electronics Co., Ltd. Method of forming patterns of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101859065A (en) * 2009-04-07 2010-10-13 国际商业机器公司 Alleviate the method for the resist pattern critical change in size in the double-exposure technology
US9316916B2 (en) 2009-04-07 2016-04-19 Globalfounries Inc. Method to mitigate resist pattern critical dimension variation in a double-exposure process
US8685865B2 (en) 2011-10-11 2014-04-01 Samsung Electronics Co., Ltd. Method of forming patterns of semiconductor device

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