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KR20060109627A - Mask used for forming an electroluminescent layer - Google Patents

Mask used for forming an electroluminescent layer Download PDF

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Publication number
KR20060109627A
KR20060109627A KR1020050031822A KR20050031822A KR20060109627A KR 20060109627 A KR20060109627 A KR 20060109627A KR 1020050031822 A KR1020050031822 A KR 1020050031822A KR 20050031822 A KR20050031822 A KR 20050031822A KR 20060109627 A KR20060109627 A KR 20060109627A
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South Korea
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pattern
deposition
deposition source
substrate
angle
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KR1020050031822A
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Korean (ko)
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KR100773249B1 (en
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탁윤흥
박종현
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엘지전자 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A mask for forming an organic electroluminescence layer is provided to decrease a shadow phenomenon by forming a deposition layer without deviation from a designated location of a substrate. In a mask(M1) for forming electroluminescence layer, an angle of inclination of both side-walls and both rear and front walls of a pattern formed in a center is equal. As deposition sources(S1,S2) is close to the pattern, the angle of inclination of the side wall closest to the deposition sources(S1,S2) among the both side walls increase gradually. As the deposition sources(S1,S2) is far from the pattern, the angle of inclination of the side wall farthest from the deposition sources(S1,S2) decreases gradually. As the deposition sources(S1,S2) is adjacent to the pattern, the angle of inclination of the front side wall increases gradually. As the deposition sources(S1,S2) is far from the pattern, the angle of inclination decrease gradually. As the deposition sources(S1,S2) is close to the pattern, the angle of inclination of the rear side wall decrease gradually. As the deposition sources(S1,S2) is far from the pattern, the angle of inclination of the rear side wall increase gradually. All patterns are arranged to be symmetrical one another on the center of a pattern line including a central pattern.

Description

유기 전계 발광층 형성용 마스크{Mask used for forming an electroluminescent layer}Mask used for forming an electroluminescent layer

도 1은 유기 전계 발광층의 증착을 위한 장치에 사용되는 일반적인 포인트 증착원의 단면도.1 is a cross-sectional view of a general point deposition source used in an apparatus for the deposition of an organic electroluminescent layer.

도 2는 도 1에 도시된 포인트 증착원과 기판의 관계를 개략적으로 도시한 도면.FIG. 2 is a diagram schematically showing a relationship between a point deposition source and a substrate shown in FIG.

도 3은 포인트 증착원과 포인트 증착원의 중심에서 벗어난 위치에 설치된 기판의 관계를 개략적으로 도시한 도면. 3 is a diagram schematically showing a relationship between a point deposition source and a substrate provided at a position off center of the point deposition source.

도 4는 도 3에 도시된 기판과 증착원의 배열 상태에서 기판 표면에 증착막이 형성되는 상태를 도시한 도면.FIG. 4 is a view showing a state in which a deposition film is formed on a substrate surface in an arrangement state of the substrate and the deposition source shown in FIG. 3.

도 5는 도 4의 "A"부분의 상세도.5 is a detail view of portion “A” of FIG. 4.

도 6은 본 발명에 따른 마스크의 저면도.6 is a bottom view of the mask according to the invention.

도 7은 도 6의 "B-B"선을 따라 절취한 상태의 단면도.7 is a cross-sectional view taken along the line “B-B” of FIG. 6.

도 8은 도 7의 "E" 부분의 상세도. FIG. 8 is a detail view of portion “E” of FIG. 7;

본 발명은 유기 전계 발광층 형성용 마스크에 관한 것으로서, 특히 기판의 표면에 발광층이 일부 형성되지 않은 샤도우 영역을 현저하게 줄일 수 있도록 구성한 마스크에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask for forming an organic electroluminescent layer, and more particularly to a mask configured to remarkably reduce a shadow region in which a light emitting layer is not partially formed on a surface of a substrate.

열적 물리적 기상 증착은 증착 재료(예를 들어, 유기물)의 증기로 기판 표면에 발광층을 형성하는 기술로서, 증착원(deposition source) 내에 수용된 증착 재료는 기화 온도까지 가열되며, 증착 재료의 증기는 수용된 증착원 밖으로 이동한 후 코팅될 기판 상에서 응축된다. Thermal physical vapor deposition is a technique of forming a light emitting layer on a substrate surface with vapor of a deposition material (eg, organic material), in which the deposition material contained in the deposition source is heated to the vaporization temperature, and the vapor of the deposition material is stored. After moving out of the deposition source, it condenses on the substrate to be coated.

증착원은 그 형상에 따라 포인트 증착원(point source) 및 선형 증착원(linear source)으로 구분된다. 도 1은 일반적인 포인트 증착원의 단면도로서, 원통형의 측벽 부재(1B), 원판형의 바닥 부재(1C), 셀 캡(1A) 및 원통형 셀(1D)로 이루어진 포인트 증착원(1)의 내부 구성을 도시하고 있다. 셀 캡(1A) 및 셀(1D)로 인하여 형성되는 내부 공간에는 증착 재료(M)인 유기물이 수용되어 있다.The deposition source is classified into a point source and a linear source according to its shape. 1 is a cross-sectional view of a general point evaporation source, the internal configuration of the point evaporation source 1 consisting of a cylindrical sidewall member 1B, a disc shaped bottom member 1C, a cell cap 1A and a cylindrical cell 1D. It is shown. In the internal space formed by the cell cap 1A and the cell 1D, an organic material, which is a deposition material M, is accommodated.

측벽 부재(1B) 내부, 즉 측벽 부재(1B)와 셀(1D) 사이에는 셀(1D)의 내부 공간에 수용된 증착 재료(M)를 가열하기 위한 수단(1B-1; 예를 들어, 전원에 연결된 발열 코일)이 위치하고 있다. Means for heating the deposition material M contained in the interior space of the cell 1D, i.e., in a power source, inside the sidewall member 1B, i.e., between the sidewall member 1B and the cell 1D. Connected heating coil) is located.

셀 캡(1A)의 중앙부에는 개구(1A-1)가 형성되어 있으며, 측벽 부재(1B)에 장착된 가열 수단(1B-1)에서 발생된 열에 의하여 가열, 기화된 증착 재료(M)의 증기는 이 개구(1A-1)를 통하여 외부, 즉 기판(챔버 내부에 장착된 상태)을 향하여 배출된다. An opening 1A-1 is formed at the center of the cell cap 1A, and vapor of the vapor deposition material M heated and vaporized by the heat generated by the heating means 1B-1 attached to the side wall member 1B. Is discharged toward the outside through the opening 1A-1, that is, the substrate (the state mounted inside the chamber).

미설명 부호 "11"은 셀 캡(1A)으로 전달된 열의 외부 발산을 막기 위하여 측 벽 부재(1B) 상단에 고정된 금속성 재질의 원판형 커버이며, "11-1"은 셀 캡(1A)의 개구(1A-1)와 대응하는, 커버(11)에 형성된 재료 증기 배출용 개구이다. Reference numeral “11” denotes a disc shaped cover made of a metallic material fixed to the top of the side wall member 1B to prevent external diffusion of heat transferred to the cell cap 1A, and “11-1” denotes a cell cap 1A. Is an opening for discharging material vapor formed in the cover 11, which corresponds to the opening 1A-1.

일반적인 유기 전계 발광층(이하, "발광층"이라 칭함) 형성 방법은 도 1에 도시된 단일의 증착원을 이용하여 증착 증기를 기판에 분사시키는 소위 "포인트 소스(point source)" 방법이다. 이 방법을 이용한 증착 장치는 기판의 규격(넓이)에 제약이 뒤따르며, 발광층의 두께가 불균일해지는 문제점이 있다. 기판의 넓이에 관계없이 균일한 두께의 발광층을 형성하기 위한 개선책으로서 기판과 증착원 사이의 거리를 증가하는 방안이 고려되었다.A general method of forming an organic electroluminescent layer (hereinafter referred to as "light emitting layer") is a so-called "point source" method in which deposition vapor is sprayed onto a substrate using a single deposition source shown in FIG. The vapor deposition apparatus using this method has a problem in that the size (width) of the substrate follows, and the thickness of the light emitting layer is uneven. As an improvement for forming a light emitting layer having a uniform thickness regardless of the width of the substrate, a method of increasing the distance between the substrate and the deposition source has been considered.

그러나, 기판과 증착원 사이의 거리를 증가시킨 증착 장치를 이용하는 경우에도 동일 기판의 표면일지라도 증착원의 바로 위에 위치하는 부분에 형성된 발광층과 그 외곽에 위치하는 부분에 형성된 발광층의 두께가 다르게 나타날 수 밖에 없으며, 따라서 균일도가 우수한 발광층이 형성된 부분만을 분리하여 사용하게 된다. However, even when using a deposition apparatus that increases the distance between the substrate and the deposition source, even if the surface of the same substrate, the thickness of the light emitting layer formed on the portion located directly above the deposition source and the portion formed on the outer portion may appear differently. There is nothing but a separate portion where the light emitting layer with excellent uniformity is formed.

도 2는 도 1에 도시된 포인트 증착원과 기판의 관계를 개략적으로 도시한 도면으로서, 편의상 포인트 증착원(1)을 박스 형태로 표현하였으며, 기판(2)과 증착원(1)을 제외한 나머지 부재들의 도시를 생략하였다. FIG. 2 is a view schematically illustrating a relationship between a point deposition source and a substrate shown in FIG. 1, and for convenience of description, the point deposition source 1 is represented in a box form, except for the substrate 2 and the deposition source 1. Illustration of the members is omitted.

폭 600mm의 기판(2)을 포인트 증착원(1)으로부터 850mm 이격된 위치에 장착하고 증착 공정을 수행한 후, 기판(2) 표면에 형성된 증착막의 두께를 측정하면, 다음과 같은 결론을 얻을 수 있다. After mounting the substrate 2 having a width of 600 mm at a position 850 mm away from the point deposition source 1 and performing a deposition process, the thickness of the deposited film formed on the surface of the substrate 2 is measured. have.

기판(2)에 형성된 증착막의 두께는 cos2θ의 값에 비례한다(여기서, θ는 포인트 증착원(1)의 중심선과 기판(2)의 특정 위치와 포인트 증착원(1)의 중심을 연결하는 가상선과의 각도). 따라서, 상술한 조건 하에서의 기판(2)의 중심부에 형성된 증착막의 두께와 에지부에 증착된 증착막의 두께의 비는 약 100 : 89이다. The thickness of the deposited film formed on the substrate 2 is proportional to the value of cos 2 θ (where θ connects the centerline of the point deposition source 1 with the specific position of the substrate 2 and the center of the point deposition source 1). Angle with an imaginary line). Therefore, the ratio of the thickness of the deposited film formed at the center of the substrate 2 and the thickness of the deposited film deposited at the edge portion under the above-described conditions is about 100: 89.

이와 같이 동일 기판일지라도 증착원(1)과의 거리에 따라 증착막의 두께가 균일하지 않을 경우, 소자마다의 발광 특성에 차이가 나타날 수 밖에 없으며, 따라서 이러한 증착막 두께의 불균일 문제를 해결하는 것이 중요하다.As described above, even if the thickness of the deposited film is not uniform according to the distance from the deposition source 1, even if the same substrate, there is no difference in the light emission characteristics of each device, and therefore, it is important to solve the problem of uneven thickness of the deposited film. .

도 3은 포인트 증착원과 포인트 증착원의 중심에서 벗어난 위치에 설치된 기판의 관계를 개략적으로 도시한 도면으로서, 도 2에 도시된 기판(2)과 증착원(1)의 배치 상태에서 나타나는 문제점을 해결하기 위하기 위하여 기판(2)을 증착원(1)의 중심으로부터 벗어난 위치에 장착한 상태를 도시하고 있다.FIG. 3 is a view schematically showing a relationship between a point deposition source and a substrate provided at a position away from the center of the point deposition source. FIG. 3 illustrates a problem in the arrangement state of the substrate 2 and the deposition source 1 shown in FIG. 2. In order to solve, the state where the board | substrate 2 was mounted in the position off from the center of the vapor deposition source 1 is shown.

600mm의 폭을 갖는 기판(2)을 그 중심이 증착원(1)의 중심으로부터 수평 방향으로 410mm 이격되도록 장착하고 기판(2)을 회전시키지 않은 상태에서 증착 공정을 진행한 후, 기판(2)의 각 부분에서의 증착막 두께를 측정하면 다음과 같은 결론을 얻을 수 있다. After the substrate 2 having a width of 600 mm is mounted so that its center is 410 mm apart from the center of the deposition source 1 in the horizontal direction, and the substrate 2 is not rotated, the deposition process is performed. The following conclusions can be obtained by measuring the thickness of the deposited film in each part of.

증착원(1)의 중심과 수직 대응하는 가상 부분에서의 증착막 두께를 100으로 가정하면, Assuming the thickness of the deposited film in the virtual part corresponding to the center of the deposition source 1 perpendicular to 100,

a) 증착원(1)과 가장 인접한 기판(2)의 에지 부분에서의 증착막 두께 : 98.4a) Deposition thickness at the edge of the substrate 2 nearest to the deposition source 1: 98.4

b) 기판(2)의 중심부에서의 증착막 두께 : 81.1b) deposited film thickness at the center of the substrate 2: 81.1

c) 증착원(1)에서 가장 멀리 떨어진 기판(2) 에지 부분에서의 증착막 두께 : 58.9c) Deposition film thickness at the edge of the substrate 2 furthest from the deposition source 1: 58.9

정상적인 증착 조건, 즉 기판(2)을 회전시킨 상태에서 증착 공정을 진행한 후, 기판(2) 각 부분에서의 증착막의 두께를 측정하면 다음과 같다. 증착원(1)의 중심과 수직 대응하는 가상 부분에서의 증착막 두께를 100으로 가정하면, After the deposition process is performed under normal deposition conditions, that is, the substrate 2 is rotated, the thickness of the deposited film in each part of the substrate 2 is measured as follows. Assuming the thickness of the deposited film in the virtual part corresponding to the center of the deposition source 1 perpendicular to 100,

a) 증착원(1)과 가장 인접한 기판(2)의 에지 부분에서의 증착막 두께 : 76.1a) Deposition thickness at the edge of the substrate 2 nearest to the deposition source 1: 76.1

b) 기판(2) 중심부에서의 증착막 두께 : 81.1b) deposited film thickness at the center of the substrate (2): 81.1

c) 증착원(1)에서 가장 멀리 떨어진 기판(2) 에지 부분에서의 증착막 두께 : 76.1c) Deposition thickness at the edge of the substrate 2 furthest from the deposition source 1: 76.1

따라서, 기판(2)의 중심부와 에지 부분에서의 증착막 두께의 비율은 100:97이다. 결과적으로 도 3에 도시된 기판(2)과 증착원(1)의 배치 상태에서 기판(2)을 회전시키면서 증착 공정을 진행할 경우, 보다 균일한 두께의 증착막을 얻을 수 있다. Therefore, the ratio of the deposited film thickness at the center portion and the edge portion of the substrate 2 is 100: 97. As a result, when the deposition process is performed while the substrate 2 is rotated in the arrangement state of the substrate 2 and the deposition source 1 shown in FIG. 3, a deposition film having a more uniform thickness can be obtained.

그러나, 이러한 배치 상태에서도 다음과 같은 문제점이 발생한다. However, the following problem also occurs in such an arrangement.

도 4는 도 3에 도시된 기판(2)과 증착원(1)의 배치 상태에서 기판(2)을 회전시키면서 기판(2) 표면에 증착막을 형성하는 상태를 도시한 도면으로서, 기판(2)과 마스크(M)의 관계를 도시하고 있다.FIG. 4 is a view showing a state in which a deposition film is formed on the surface of the substrate 2 while the substrate 2 is rotated in the arrangement state of the substrate 2 and the deposition source 1 shown in FIG. 3. And the relationship between the mask M is shown.

증착막 형성을 위하여 기판(2)의 하부에는 패턴이 형성된 마스크(M)가 위치하며, 이 마스크(M)에 의하여 기판(2) 표면에 소정 형상의 증착막이 형성된다. 그 러나, 증착원(1)과 마스크(M)의 위치 관계 및 마스크(M)에 형성된 패턴의 형상으로 인하여 기판(2)의 설정된 영역에 원하는 형태의 증착막을 형성할 수 없다. In order to form the deposition film, a mask M having a pattern is positioned below the substrate 2, and a deposition film having a predetermined shape is formed on the surface of the substrate 2 by the mask M. Referring to FIG. However, due to the positional relationship between the deposition source 1 and the mask M and the shape of the pattern formed on the mask M, the deposition film having a desired shape cannot be formed in the set region of the substrate 2.

도 5는 도 4의 "A"부의 상세도로서, 편의상 기판(2)의 일부 및 마스크(M)에 형성된 어느 하나의 패턴(m)만을 도시하였으며, 또한 각 부재의 절단면에 대하여 단면 처리를 하지 않았다. FIG. 5 is a detailed view of the portion “A” of FIG. 4 and shows only one pattern m formed on a part of the substrate 2 and the mask M for convenience, and does not cross-section the cut surface of each member. Did.

도 5에 도시된 바와 같이, 마스크(M)의 각 패턴(m)은 그 양 측벽들이 마스크(M)에 대한 수직선(C)선에 대하여 외측으로 일정한 각도(W) 경사진 상태로 형성된다.As shown in FIG. 5, each pattern m of the mask M is formed in a state in which both sidewalls thereof are inclined outward at a constant angle W with respect to the vertical line C line with respect to the mask M. As shown in FIG.

이와 같은 패턴(m)의 형상에 의하여 마스크(M) 표면에 대하여 (수직이 아닌) 경사각도를 갖고 유동하는 증착 증기는 마스크(M)에 형성된 패턴(m)의 (증착원을 향하는) 가장자리에 의하여 그 흐름이 차단된다. Due to the shape of the pattern m, the vapor deposition vapors flowing at an inclined angle (not vertical) with respect to the surface of the mask M are formed at the edges (toward the deposition source) of the pattern m formed in the mask M. The flow is blocked.

따라서 기판(2) 표면에서, 마스크(M)의 패턴(m)에 의하여 노출된 부분일지라도 증착막이 형성되지 않는 샤도우(shadow) 현상이 발생한다(도 4의 "S" 부분). 이와는 반대로, 마스크(M)에 의하여 노출되지 않은 영역임에도 불구하고 증착 증기가 유입되어 증착막이 형성되지 않아야 할 영역에 증착막이 형성된다(도 4의 "N" 부분). 결과적으로, 도 5에 도시된 바와 같이, 기판(2)의 증착막 형성 예정 위치(D)로부터 벗어난 위치(d)에 증착막이 형성되는 것이다.Therefore, a shadow phenomenon occurs in which the deposited film is not formed even on the surface of the substrate 2 even by the portion exposed by the pattern m of the mask M ("S" portion in FIG. 4). On the contrary, even though the area is not exposed by the mask M, the vapor deposition vapor is introduced to form the vapor deposition film in the area where the vapor deposition film is not to be formed ("N" portion of FIG. 4). As a result, as shown in FIG. 5, a vapor deposition film is formed in the position (d) which deviates from the vapor deposition film formation scheduled position D of the board | substrate 2. As shown in FIG.

이러한 현상은 (마스크가 장착된) 기판(2)이 회전하여 증착원과의 근거리부와 원거리부의 위치가 역전되는 경우에도 동일하게 발생한다. This phenomenon also occurs in the case where the substrate 2 (with mask) is rotated so that the positions of the near and far portions with the deposition source are reversed.

이와 같이, 기판의 불필요한 영역에 증착막이 형성되는 현상, 예를 들어, B 계열의 유기물 증착막 일부에 중첩된 상태로 G 또는 R 계열의 유기물 증기가 증착되는 현상 및 증착막이 형성되어야 할 영역에 증착막이 형성되지 않는 현상은 증착 공정을 기초로 하여 진행되는 후 공정에 심각한 영향을 미치게 되며, 결과적으로 소자의 불량을 야기하게 된다. As such, a phenomenon in which a deposition film is formed in an unnecessary area of the substrate, for example, a phenomenon in which a G or R-based organic vapor is deposited in a state overlapped with a part of a B-based organic material deposition film and a region in which the deposition film is to be formed. The non-forming phenomenon seriously affects the post process based on the deposition process, resulting in the failure of the device.

본 발명은 유기 전계 발광층을 형성하기 위한 과정에서 발생되는 상술한 문제점을 해결하기 위한 것으로, 기판 전체 표면에 균일한 증착막을 형성함과 동시에 설정된 영역에 증착막이 형성되지 않는 샤도우 현상을 현저하게 줄일 수 있는 마스크를 제공하는데 그 목적이 있다. The present invention is to solve the above-described problems generated during the process of forming the organic electroluminescent layer, and to form a uniform deposition film on the entire surface of the substrate and at the same time can significantly reduce the shadow phenomenon that the deposition film is not formed in the set area The purpose is to provide a mask.

상기 목적을 실현하기 위한 본 발명에 따른, 개구 형태의 패턴들이 형성된 슬롯형 마스크는 중앙부에 형성된 패턴의 양 측벽들 및 전후방 측벽들의 경사 각도는 동일하되, 이 중앙 패턴을 기준으로 증착원에 가까운 패턴일수록 양 측벽들 중 증착원에 가까운 측벽의 경사 각도는 점차적으로 증가하는 반면, 증착원에서 먼 측벽의 경사 각도는 점차적으로 감소하며, 전방 측벽의 경사 각도는 증착원에 인접한 패턴일수록 점차적으로 증가되는 반면, 증착원으로부터 먼 패턴일수록 점차적으로 감소하고, 후방 측벽의 경사 각도는 증착원에 인접한 패턴일수록 점차적으로 작아지는 반면, 증착원으로 먼 패턴일수록 증가하여, 모든 패턴들은 중앙 패턴을 포함하는 패턴열을 중심으로 대칭된 구조를 이룬다.According to the present invention for realizing the above object, the slot-type mask in which the pattern of the opening is formed is the same inclination angle of both sidewalls and front and rear sidewalls of the pattern formed in the center portion, but the pattern close to the deposition source based on the center pattern The inclination angle of the sidewall close to the deposition source gradually increases, while the inclination angle of the sidewall far from the deposition source gradually decreases, and the inclination angle of the front sidewall gradually increases with the pattern adjacent to the deposition source. On the other hand, the pattern further away from the deposition source decreases gradually, and the inclination angle of the rear sidewall gradually decreases as the pattern adjacent to the deposition source increases, while the pattern farther away from the deposition source increases, so that all patterns include the central pattern. Asymmetrical structure is achieved.

이하, 본 발명을 첨부한 도면을 참고하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings of the present invention will be described in detail.

증착막을 형성하기 위하여 사용되는 마스크는 패턴의 형상에 따라 그릴형(gille type)과 슬롯형(slot type)으로 구분되나, 본 발명은 슬롯형 마스크에 적용된다. The mask used to form the deposited film is classified into a grill type and a slot type according to the shape of the pattern, but the present invention is applied to the slot type mask.

도 6은 본 발명에 따른 마스크의 저면도, 도 7은 도 6의 선 "B-B"을 따라 절취한 상태의 단면도로서, 도 6 및 도 7에는 편의상 일부의 패턴(m0 및 m1)만을 나타내었으며, 각 패턴의 형상을 단순하게 도시하였다. 6 is a bottom view of the mask according to the present invention, FIG. 7 is a cross-sectional view taken along the line “BB” of FIG. 6, and FIGS. 6 and 7 show only some patterns m0 and m1 for convenience. The shape of each pattern is shown simply.

또한, 도 6 및 도 7에서는 기판의 양측 하부에 설치된 2개의 증착원(S1 및 S2)을 도시하고 있다. 한편, 마스크(M1)의 하부에 위치하는 2개의 증착원(S1 및 S2)은 마스크의 2개의 코너부에 대응한다. 6 and 7 show two deposition sources S1 and S2 provided on both lower sides of the substrate. On the other hand, the two deposition sources S1 and S2 located below the mask M1 correspond to two corner portions of the mask.

본 발명에 따른 마스크(M1)의 가장 큰 특징은 마스크(M1) 표면에서의 가상 수직선에 대하여 각 패턴(m1)을 한정하는 양 측벽들의 각도를 달리 구성한 것이다.The biggest feature of the mask M1 according to the present invention is that the angles of both sidewalls defining each pattern m1 with respect to the virtual vertical line on the mask M1 surface are configured differently.

즉, 각 패턴(m1)을 한정하는 양 측벽들중, 증착원(S1 또는 S2)과 가까운 측벽(이하, 편의상 "제 1 측벽"이라 함)의 경사 각도(W1; 즉, 마스크(M1) 표면에서의 가상 수직선(도 8의 "C")과 측벽 간의 각도)를 그 반대쪽 측벽 (이하, 편의상 "제 2 측벽"이라 함)의 경사 각도(W2; 즉, 마스크(M1) 표면에서의 가상 수직선(도 8의 "C")과 측벽 간의 각도)보다 크게 형성하였다. That is, of the sidewalls defining each pattern m1, the inclination angle W1 of the sidewall close to the deposition source S1 or S2 (hereinafter referred to as "first side wall" for convenience) (ie, the surface of the mask M1) The angle between the imaginary vertical line ("C" in FIG. 8) and the side wall at is the inclination angle W2 of the opposite side wall (hereinafter referred to as the "second side wall" for convenience) (ie, the imaginary vertical line at the mask M1 surface). ("C" in FIG. 8) and the angle between the sidewalls.

도 8은 도 7의 "E" 부분의 상세도로서, 어느 한 패턴의 구조에 따른 증착 재료 증기의 유입 상태를 설명하고 있다. FIG. 8 is a detailed view of portion “E” of FIG. 7 illustrating the inflow state of the vapor deposition material according to any one structure.

도 5에 도시된 패턴(m) 구조와 비교할 때, 도 6 및 도 8에 도시된 구조의 패턴(m1)에서는 제 1 측벽의 경사 각도(W1)가 커지며, 따라서 증착 재료 증기의 유입 각도는 제 1 측벽 방향(증착원 방향)으로 넓어지게 된다. 따라서 본 발명에 따른 마스크(M1)를 이용하여 증착 공정을 수행한 후에는 기판(2)의 증착막 형성 예정 위치(D)로부터 크게 벗어나지 않고 증착막(d)이 형성되어 샤도우 영역이 현저하게 감소된다. Compared with the pattern m structure shown in FIG. 5, in the pattern m1 of the structure shown in FIGS. 6 and 8, the inclination angle W1 of the first sidewall is increased, so that the inflow angle of the vapor deposition material vapor is determined by It becomes wider in 1 side wall direction (deposition source direction). Therefore, after the deposition process is performed using the mask M1 according to the present invention, the deposition film d is formed without significantly departing from the deposition position D on the substrate 2, whereby the shadow area is significantly reduced.

한편, 도 7에 도시된 바와 같이 슬롯형 마스크(M1)는 그 기본 부재에 일정한 면적의 패턴(m0, m1)이 다수 형성되어 있다. 따라서, 패턴들(m1)의 위치, 즉 증착원(S1 및 S2)간의 거리에 따라 각 패턴(m1)을 한정하는 각 격벽의 각도를 점차적으로 달리해야만 하다. On the other hand, as shown in Fig. 7, the slot-type mask M1 has a plurality of patterns m0 and m1 having a predetermined area formed on the basic member. Therefore, the angle of each partition wall defining each pattern m1 must be gradually changed according to the position of the patterns m1, that is, the distance between the deposition sources S1 and S2.

먼저, 기판의 회전 중심에 해당하는 마스크(M1)의 중앙부에 형성된 패턴(m0)은 4개의 측벽이 동일한 경사 각도를 갖고 있으나, 이 중앙 패턴(m0)을 주변에 위치한 패턴들(m1)은 4개의 측벽들이 다른 경사 각도를 갖는다.First, in the pattern m0 formed at the center of the mask M1 corresponding to the center of rotation of the substrate, four sidewalls have the same inclination angle, but the patterns m1 located around the center pattern m0 are 4 Sidewalls have different tilt angles.

2개의 증착원들(S1, S2)과 동일한 거리에 있는 중심열(K)의 패턴들은 중앙 패턴(m0)과 같이 양측 측벽들의 각도가 동일한 반면에, 증착원(S1 또는 S2)과 가까운 전방 측벽의 경사 각도(W1)는 증착원에 가까운 패턴에서 가장 크고 먼 패턴으로 갈수록 점차적으로 감소한다. 또한, 증착원과 먼 후방 측벽의 경사 각도(W2)는 증착원에 가까운 패턴에서 가장 작고 먼 패턴으로 갈수록 점차적으로 증가한다. The patterns of the center row K at the same distance as the two deposition sources S1 and S2 have the same angle of both sidewalls as the center pattern m0, whereas the front sidewalls close to the deposition source S1 or S2. The inclination angle W1 of gradually decreases toward the largest and farthest pattern in the pattern close to the deposition source. Also, the inclination angle W2 of the rear sidewall far from the deposition source gradually increases from the pattern closest to the deposition source to the smallest and distant pattern.

결과적으로 중심열(K)의 패턴들은 중앙 패턴(m0)을 기준으로 대칭 상태를 이룬다. As a result, the patterns of the center column K are symmetrical with respect to the center pattern m0.

한편, 패턴들중 중심열(K)을 기준으로 제 1 증착원(S1)과 가까운 패턴들의 양측벽중 제 1 증착원(S1)에 가까운 측벽의 경사 각도(W1)는 제 1 증착원에 가까운 패턴일수록 점차적으로 증가하며, 그 반대 측벽의 경사 각도(W1)는 제 1 증착원(S1)에 가까운 패턴일수록 점차적으로 감소한다. Meanwhile, the inclination angle W1 of the sidewalls close to the first deposition source S1 among the sidewalls of the patterns close to the first deposition source S1 among the patterns is closer to the first deposition source. As the pattern increases, the inclination angle W1 of the opposite sidewall gradually decreases as the pattern approaches the first deposition source S1.

또한 제 1 증착원(S1)에 가까운 패턴의 전방 측벽의 경사 각도(W1)는 제 1 증착원(S1)에 가장 가까운 패턴에서 제일 크게 나타나며, 가장 먼 패턴에서는 가장 작게 나타난다. 반면에, 제 1 증착원(S1)에 가까운 패턴의 후방 측벽)의 경사 각도(W2)는 제 1 증착원(S1)에 가장 까가운 패턴에서 제일 작게 나타나며, 가장 먼 패턴에서는 가장 크게 나타난다In addition, the inclination angle W1 of the front sidewall of the pattern close to the first deposition source S1 is the largest in the pattern closest to the first deposition source S1 and the smallest in the farthest pattern. On the other hand, the inclination angle W2 of the rear sidewall of the pattern close to the first deposition source S1 appears the smallest in the pattern closest to the first deposition source S1 and the largest in the farthest pattern.

제 2 증착원(S2)과 가까운 패턴들은 중앙 패턴(m0)을 포함하는 중심열(K)을 기준으로 제 1 증착원(S1)과 가까운 패턴들의 구조와 대칭적인 구조를 갖는다.The patterns close to the second deposition source S2 have a symmetrical structure with those of the patterns close to the first deposition source S1 based on the central column K including the central pattern m0.

마스크(M1)의 패턴들(m0 및 m1)을 위와 같이 구성하고 또한 배치함으로서 기판과 함께 마스크(M1)가 회전하더라도 모든 패턴들(m0 및 m1)은 증착원(S1 및 S2)들에 대하여 도 8과 같은 조건에 놓이게 된다. By arranging and arranging the patterns m0 and m1 of the mask M1 as described above, even if the mask M1 rotates together with the substrate, all of the patterns m0 and m1 are formed with respect to the deposition sources S1 and S2. You are in the same condition as 8.

이상과 같은 본 발명에 따른 슬롯형 마스크는 기판 전체 표면에 걸쳐 균일한 두께의 증착막을 형성함과 동시에 증착막이 형성되지 않는 샤도우 영역의 면적을 현저하게 감소시킬 수 있다. The slotted mask according to the present invention as described above can form a deposition film having a uniform thickness over the entire surface of the substrate and at the same time can significantly reduce the area of the shadow area where the deposition film is not formed.

위에 설명된 예시적인 실시예는 제한적이기보다는 본 발명의 모든 관점들 내에서 설명적인 것이 되도록 의도되었다. 따라서 본 발명은 본 기술 분야의 숙련된 자들에 의하여 본 명세서 내에 포함된 설명으로부터 얻어질 수 있는 많은 변형과 상세한 실행이 가능하다. 다음의 청구범위에 의하여 한정된 바와 같이 이러한 모든 변형과 변경은 본 발명의 범위 및 사상 내에 있는 것으로 고려되어야 한다. The illustrative embodiments described above are intended to be illustrative within all aspects of the invention rather than limiting. Accordingly, the present invention is capable of many modifications and implementations that can be made by those skilled in the art from the description contained herein. All such modifications and variations are considered to be within the scope and spirit of the invention as defined by the following claims.

Claims (1)

기판 하부에 위치한 2개의 증착원으로부터 공급된 증착 재료 증기를 통과시켜 회전하는 기판 표면에 패터닝된 증착막을 형성하기 위하여 사용되며, 개구 형태의 패턴들이 형성된 슬롯형 마스크에 있어서,In the slotted mask formed with a pattern of the opening pattern is used to form a patterned deposition film on the surface of the rotating substrate by passing the vapor deposition material supplied from two deposition sources located below the substrate, 중앙부에 형성된 패턴의 양 측벽들 및 전후방 측벽들의 경사 각도는 동일하되, 이 중앙 패턴을 기준으로The inclination angles of both sidewalls and front and rear sidewalls of the pattern formed at the center portion are the same, but based on the center pattern 증착원에 가까운 패턴일수록 양 측벽들 중 증착원에 가까운 측벽의 경사 각도(W1)는 점차적으로 증가하는 반면, 증착원에서 먼 측벽(W2)의 경사 각도는 점차적으로 감소하며, As the pattern is closer to the deposition source, the inclination angle W1 of the sidewalls closer to the deposition source is gradually increased, while the inclination angle of the sidewall W2 farther from the deposition source is gradually decreased, 전방 측벽의 경사 각도는 증착원에 인접한 패턴일수록 점차적으로 증가되는 반면, 증착원으로부터 먼 패턴일수록 점차적으로 감소하고,The inclination angle of the front sidewall gradually increases with the pattern adjacent to the deposition source, while gradually decreasing with the pattern away from the deposition source, 후방 측벽의 경사 각도는 증착원에 인접한 패턴일수록 점차적으로 작아지는 반면, 증착원으로 먼 패턴일수록 증가하여,The angle of inclination of the rear sidewall gradually decreases with the pattern adjacent to the deposition source, while it increases with the pattern farther from the deposition source, 모든 패턴들은 중앙 패턴을 포함하는 패턴열을 중심으로 대칭된 구조를 이루는 것을 특징으로 하는 슬롯형 마스크.The slot-type mask, characterized in that all the patterns form a symmetrical structure around the pattern string including the central pattern.
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US8993360B2 (en) 2013-03-29 2015-03-31 Samsung Display Co., Ltd. Deposition apparatus, method of manufacturing organic light emitting display apparatus, and organic light emitting display apparatus
US9534288B2 (en) 2013-04-18 2017-01-03 Samsung Display Co., Ltd. Deposition apparatus, method of manufacturing organic light-emitting display apparatus by using same, and organic light-emitting display apparatus manufactured by using deposition apparatus
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US9347886B2 (en) 2013-06-24 2016-05-24 Samsung Display Co., Ltd. Apparatus for monitoring deposition rate, apparatus provided with the same for depositing organic layer, method of monitoring deposition rate, and method of manufacturing organic light emitting display apparatus using the same
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JP2022068330A (en) * 2015-04-24 2022-05-09 エルジー イノテック カンパニー リミテッド Metal substrate and vapor deposition mask using the same

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