KR20050066348A - Vertical alignment mode liquid crystal display device and method for fabricating the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical alignment mode liquid crystal display device and a method for manufacturing the same in which an electric field is formed and the domain is divided into electric field distortion means having transparent properties, thereby preventing the declining occurring in the electric field distortion means. The vertical alignment mode liquid crystal display device includes a gate line and a data line vertically intersecting on a substrate to define a unit pixel, a thin film transistor formed at an intersection of the gate line and the data line, and a first field distortion means connected to the thin film transistor. A pixel electrode having a light source, an insulating film formed on the entire surface including the pixel electrode, second field distortion means connected to the pixel electrode on the insulating film and dividing a domain of the unit pixel together with the first field distortion means; The liquid crystal layer formed between the substrate and the opposite substrate bonded thereto Characterized in that it comprises a.

Description

Vertical alignment liquid crystal display device and method for manufacturing the same {VERTICAL ALIGNMENT MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device (LCD), and more particularly, to a vertical alignment mode liquid crystal display device that realizes a wide viewing angle by distorting an electric field by forming a slit or a structure in a transparent conductive film, and a manufacturing method thereof. will be.

One of the liquid crystal display devices currently used is a liquid crystal display device of twisted nematic (TN) mode.

The TN mode liquid crystal display device forms electrodes on two substrates, and the liquid crystal molecules filled therebetween are parallel to the substrate, twisted in a spiral with a constant pitch, and then a voltage is applied to the electrodes to drive the liquid crystal director. That's the way it is.

However, since the TN mode liquid crystal display does not completely block the light in the off state, the contrast ratio is not good and the contrast ratio changes with the angle, and the brightness of the halftone is reversed as the angle changes. Hard to get In addition, there is a viewing angle problem such as that the image quality is not symmetrical with respect to the front face.

Conventionally, studies to solve the narrow viewing angle problem of the liquid crystal display device are active, and a film compensation mode (Film-compensated Mode) for compensating the viewing angle with a compensation film, and the viewing angle of each domain by dividing pixels into multiple domains Multi-Domain Mode for compensating viewing angles in different directions, In-Plane Switching mode for placing two electrodes on the same substrate to generate a horizontal electric field, and OCB ( There are techniques such as Optically Compensated Birefringence Mode.

On the other hand, the vertical alignment (VA) mode liquid crystal display uses a negative liquid crystal having a negative dielectric anisotropy and a vertical alignment layer. In the state where no voltage is applied, the long axis of the liquid crystal molecules is vertically aligned with the plane of the alignment layer. The polarization axis of the polarizer attached to the vertical axis of the liquid crystal molecule is arranged perpendicularly to display a black mode (normally black mode). On the other hand, when a voltage is applied, the long axis of the liquid crystal molecules moves toward the alignment layer plane in the vertical direction of the alignment layer plane due to the property of being oriented obliquely with respect to the electric field of the negative liquid crystal molecule to transmit light.

Such a vertically aligned liquid crystal display device is superior in various aspects, such as contrast ratio and response speed, compared to the twisted nematic method. In addition, when the alignment direction of the liquid crystal molecules are divided into a plurality of directions and a compensation film is used, there is an advantage in that a wide viewing angle can be effectively realized.

Recently, instead of the alignment process, structures such as side-electrodes, ribs, or slits are formed on the substrate, thereby distorting the electric field applied to the liquid crystal layer to position the director of the liquid crystal molecules in a desired direction. do.

Examples include multi-domain vertical alignment (MVA) for forming ribs on the common electrode, patterned vertical alignment (PVA) for forming slits in the common electrode, bias-bending vertical alignment (BBVA), and the like.

Hereinafter, a vertical alignment mode liquid crystal display device according to the related art will be described with reference to the accompanying drawings.

1 is a plan view of a PVA mode liquid crystal display device according to the prior art, FIG. 2 is a sectional view taken along line II ′ of FIG. 1, and FIG. 3 is a graph of transmittance in the PVA mode liquid crystal display device according to the prior art.

First, referring to FIG. 1 and FIG. 2 with reference to the conventional PVA mode liquid crystal display device, in the liquid crystal display device comprising the upper and lower substrates 21 and 11 and the liquid crystal layer 10 formed therebetween, The lower substrate 11 has a gate wiring 12 and a data wiring 15 intersecting in a row to define a pixel region, a pixel electrode 17 formed in the pixel region, the gate wiring 12 and a data wiring. A thin film transistor (TFT) formed at an intersection point of 15 and selectively switched by a scan signal of the gate line 12 to apply a data signal of the data line to the pixel electrode; A front surface including a plurality of first field distortion means 33 formed at a predetermined portion of the electrode 17 to control the liquid crystal director by electric field distortion, and a pixel electrode 17 having the first field distortion means 33. Formed of crystalline molecules A first vertical alignment film 29 for controlling heat is provided.

1 and 2, the first electric field distortion means 33 is represented as a slit formed by selectively removing the pixel electrode 17.

The thin film transistor TFT may include a gate electrode branched from the gate line 12, a gate insulating layer stacked on the gate electrode, a semiconductor layer formed in an island shape on the gate electrode, It is composed of a source / drain electrode branched from the data line 15 formed on the semiconductor layer.

Although not shown, a storage capacitor parallel to the gate wiring is further formed on the lower substrate to maintain the voltage charged in the liquid crystal layer in the turn-off period of the thin film transistor, thereby preventing deterioration in image quality due to parasitic capacitance. Do it.

On the other hand, the upper substrate 21 has a black matrix layer 22 for preventing light leakage occurring in an area where it is difficult to control the alignment of the liquid crystal due to an unstable electric field, and the black matrix layer ( 22, R, G, and B color filter layers 23 formed therebetween, a common electrode 24 stacked on the color filter layer 23 and facing the pixel electrode 17 of the lower substrate 11; A plurality of second field distortion means 31 formed at a predetermined portion of the common electrode 24 to control the liquid crystal director by electric field distortion, and having a common electrode 24 having the second field distortion means 31. A second vertical alignment layer 30 is formed on the front surface to control the arrangement of liquid crystal molecules.

Reference numeral 60 in FIG. 2 denotes a retardation film, and 61 denotes a polarizing film. The retardation film and the polarizing film are attached to the outer circumferential surfaces of the upper and lower substrates 21 and 11, respectively.

1 and 2, the second field distortion means 31 is shown as a slit formed by selectively removing the common electrode 24.

 In addition to the slit shape, the second field distortion means 31 may be formed of ribs patterned by depositing a separate dielectric material on the common electrode. At this time, when the field distortion means formed in the common electrode 24 is a slit, it is usually called a PVA mode, and when it is a lip, it is called an MVA mode.

The first electric field distortion means 33 and the second electric field distortion means 31 shown in the drawings are alternately arranged in parallel diagonal lines to form a multi-domain, but the shape of the electric field distortion means is limited to the diagonal shape. It is not possible to deform in various ways such as a line shape, a X shape, and a + line shape.

Although not shown, a vertical alignment layer is further provided on the inner surfaces of the pixel electrode 17 and the common electrode 24 to control the arrangement of liquid crystal molecules.

Further, the liquid crystal layer 10 is further formed between the upper and lower substrates 11 and 21. In the liquid crystal display of the VA mode, a negative liquid crystal having a negative dielectric anisotropy is used, and the long axis of the liquid crystal molecules is initially formed on the substrate plane. Make sure it is vertically aligned with.

The liquid crystal display device thus formed is divided into a plurality of regions by the first field distortion means 33 of the lower substrate 11 and the second field distortion means 31 of the upper substrate 21 with respect to one unit pixel. It becomes a multi-domain.

When a constant voltage is applied to the PVA mode liquid crystal display device, an equipotential surface 1 as shown in FIG. 2 is formed, and the liquid crystal molecules of the liquid crystal layer 10 are in a constant direction along the equipotential surface 1. I will lie down.

As described above, since the VA liquid crystal has negative characteristics, the liquid crystal molecules lie horizontally to lie parallel to the equipotential surfaces formed in the horizontal direction. However, since the equipotential surfaces in the vertical direction are formed near the field distortion means, the liquid crystal molecules stand vertically. Therefore, in the VA mode, light passes only in an area in which the liquid crystal molecules lie horizontally, so that light does not pass in the vicinity of the field distortion means, which is an area in which the liquid crystal molecules stand vertically, so that the disclination occurs. The disclination also occurs because the liquid crystal molecules cannot be arranged in a desired direction.

Specifically, when 7V is applied to the pixel electrode 17 and 0V is applied to the common electrode 24 to turn on the white level, when the time is 20ms, a transmittance graph as shown in FIG. 3 is obtained. It can be seen that near the field distortion means of the transmittance, the transmittance is sharply lowered, so that the disclination occurs without the light being transmitted and the black color is realized.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and is a vertical field preventing means for preventing discretization in the field distortion means by forming an electric field distortion means for dividing a unit pixel into a plurality of domains with a transparent conductive film in which an electric field is formed. An object of the present invention is to provide an alignment mode liquid crystal display device and a method of manufacturing the same.

In order to achieve the above object, the vertical alignment mode liquid crystal display device includes a gate wiring and a data wiring vertically intersecting on a substrate to define a unit pixel, a thin film transistor formed at an intersection of the gate wiring and the data wiring, A pixel electrode connected to the thin film transistor and having a first field distortion means, an insulating film formed on the entire surface including the pixel electrode, and connected to the pixel electrode on the insulating film to form a domain of the unit pixel together with the first field distortion means. And a liquid crystal layer formed between the second field distortion means for dividing and the opposite substrate bonded to the substrate.

In addition, a method of manufacturing a vertical alignment mode liquid crystal display device for achieving another object of the present invention is to vertically form a gate wiring and a data wiring on a substrate, and to form a thin film transistor at the intersection of the gate wiring and the data wiring. Forming a protective film on the entire surface including the data wiring, forming a pixel electrode connected to the thin film transistor on the protective film, and forming a first electric field distortion means on the pixel electrode; Forming an insulating film on the entire surface including the pixel electrode, forming a second electric field distortion means connected to the pixel electrode on the insulating film, opposing the opposing substrate to the substrate, and forming a liquid crystal between the two substrates. It characterized by comprising a step of forming a layer.

Hereinafter, a vertical alignment mode liquid crystal display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

4 is a plan view of a VA mode liquid crystal display device according to the present invention, FIG. 5 is a cross-sectional view taken along line II-II 'of FIG. 4, and FIG. 6 is a graph of transmittance in the VA mode liquid crystal display device according to the present invention.

7A to 7D are process plan views of the VA mode liquid crystal display device according to the present invention.

4 and 5, the vertical alignment mode liquid crystal display device according to the present invention is a liquid crystal formed by being injected between the upper substrate and the lower substrate (121, 111), and the upper and lower substrates (121, 111) The liquid crystal of the liquid crystal layer 110 is a liquid crystal of the layer 110, the direction of the electrical anisotropy Δε and the direction of the optical anisotropy Δn is a liquid crystal that is perpendicular or close to the vertical liquid crystals.

In addition, the upper substrate 121 includes a black matrix 122 formed at a predetermined portion to prevent light leakage, and a color filter layer 123 of R, G, and B formed between the black matrix 122 to implement color. The common electrode 124 is integrally formed on the front surface including the color filter layer 123 and is not patterned at all, and the second vertical alignment layer 130 is formed on the front surface including the common electrode 124.

On the other hand, the lower substrate 111 intersects each other in a matrix form with a gate insulating film 113 serving as an insulating film therebetween to define a subpixel, and a gate wiring 112 and a data wiring 115 intersecting each other. A pixel electrode 117 having a thin film transistor (TFT) formed at a portion, a first field distortion means 133 connected to the thin film transistor TFT and having a slit between the thin film transistor TFT having an insulating film therebetween, and the pixel An insulating film 118 formed on the front surface including the electrode 117 and a second film formed on the insulating film 118 to form a predetermined pattern with the first electric field distortion means 133 to divide the sub-pixel into a plurality of regions. The field distortion means 131 and the first vertical alignment layer 129 formed on the front surface including the second field distortion means 131 are provided.

In this case, the first field distortion means 133 is formed by removing a predetermined portion of the pixel electrode 117, and the second field distortion means 131 is formed by separately patterning a conductive material.

In particular, the second electric field distortion means 131 is connected to the pixel electrode 117 through a contact hole 151 formed in the insulating film 118 and receives the same voltage as the pixel electrode 117. Since the electric field is also formed in the second electric field distortion means 131, the liquid crystal molecules near the second electric field distortion means can be arranged in a desired direction so that the disclination does not occur.

The second electric field distortion means 131 is formed of a transparent conductive material of ITO or IZO, such as the pixel electrode 117, so that the transmittance of light introduced from the backlight does not fall.

In the liquid crystal display device, a region in a subpixel is divided into a plurality of regions by the first and second electric field distortion means 133 and 131 of the lower substrate 111 so that the liquid crystal molecules of each region are oriented in different directions so that the entire viewing angle is obtained. This is compensated. In this case, the first electric field distortion means 133 and the second electric field distortion means 131 may be formed in various patterns such as a line shape, a X shape, a + line shape, and alternately in a diagonal form parallel to each other in FIG. It is shown to be deployed.

As described above, the liquid crystal display device according to the present invention does not form the electric field distortion means on the upper substrate 121. When the electric field distortion means is formed on each of the upper and lower substrates as in the prior art, the upper and lower substrates are bonded together. While the field distortion means of the upper and lower substrates are misaligned due to the misalignment in the process, the optical loss occurs, whereas in the liquid crystal display device according to the present invention, the field distortion means are formed on the lower substrate. It is possible to prevent light loss due to misalignment.

On the other hand, when a voltage is applied to the liquid crystal display device, the liquid crystal molecules initially arranged vertically are horizontally laid side by side on the equipotential surface. In this case, as shown in FIG. 5, since the first electric field distortion means 133 is a portion where the transparent conductive film has been removed, the potential is lower than that of the surroundings, and the second electric field distortion means 131 has a separate transparent conductive film formed thereon. Since the voltage is applied from the electrode 117, the potential is high, and the pixel electrode 117 in the portion without the first and second electric field distortion means 133 and 131 is interrupted by the insulating film 118 which is a dielectric layer and the second electric field. The potential is lower than the distortion means 131.

Since the response time of the liquid crystal varies according to the equipotential surface 101 formed at this time, the dielectric constant and thickness of the insulating layer 118 may be adjusted.

Here, the insulating film 118 is an organic insulating material such as BCB (Benzocyclobutene), acrylic resin (acryl resin) having a low dielectric constant of about 3.5 or silicon nitride (SiNx), silicon oxide (SiOx) having a dielectric constant of about 7.2, etc. It can be formed of an inorganic insulating material.

Specifically, when the insulating film 118 having a dielectric constant of 6.7 is formed to have a thickness of 0.8 μm, 7 V is applied to the pixel electrode 117, and 0 V is applied to the common electrode 124, the time is 20 ms. When the transmittance graph as shown in FIG. 6 is obtained, near the first electric field distortion means 133, which is a slit, the transmittance is sharply lowered, so that the disclination occurs when light is not transmitted and black color is realized. In the second electric field distortion means 131 formed of the electric film, the transmittance is not lowered and an electric field is formed so that no disclination occurs. Therefore, it can be seen that the liquid crystal display device according to the present invention is advantageous in terms of transmission characteristics.

Meanwhile, a phase difference film and a polarizing film are further attached to outer surfaces of the upper and lower substrates 121 and 111.

The retardation film is a negative uniaxial film having one axis and compensates for a viewing angle.

Therefore, the area without gray inversion is enlarged, the contrast ratio in the oblique direction is increased, and the multi-domain in one pixel is realized, so that the viewing angles in the left and right directions are effectively compensated.

When the electric field is applied to the liquid crystal display device formed as described above, the long axes of the liquid crystal molecules vertically aligned with respect to the substrate surface are inclined in different directions with respect to the first and second electric field distortion means 133 and 131 to compensate for the viewing angle. Wide viewing angle is achieved.

Looking in more detail through the manufacturing method, first, as shown in Figure 7a, having a low resistivity on the substrate (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), chromium Metals such as (Cr), titanium (Ti), tantalum (Ta), and molybdenum-tungsten (MoW) are deposited and patterned to form a plurality of gate lines 112 and gate electrodes 112a.

Subsequently, an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx) having excellent adhesion and high dielectric breakdown voltage on the entire surface including the gate wiring 112 may be deposited using a plasma enhanced chemical vapor deposition method (PECVD). Chemical Vapor Deposition) to form a gate insulating film (113 in FIG. 5).

In addition, amorphous silicon (a-Si: H) is deposited on the entire surface including the gate insulating layer at a high temperature and then patterned to form a semiconductor layer 114 on the gate insulating layer on the gate electrode 112a.

An overcoat layer doped with an impurity in amorphous silicon may be further formed on the semiconductor layer 114 in order to reduce a corner resistance with a source / drain electrode to be formed later.

Subsequently, as shown in FIG. 7B, copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), chromium (Cr), and titanium on the front surface including the semiconductor layer 114. Low-resistance metals such as (Ti), tantalum (Ta), and molybdenum-tungsten (MoW) are deposited and patterned to form the data lines 115 and the source / drain electrodes 115a and 115b.

The data line 115 is formed to cross the gate line 112 to define a subpixel, and the source / drain electrodes 115a and 115b are formed at both ends of the semiconductor layer 114 to form a gate electrode 112a. ), A thin film transistor composed of the semiconductor layer 114 and the source / drain electrodes 115a and 115b is completed.

Subsequently, an inorganic material such as silicon nitride or silicon oxide is deposited on the entire surface including the data line 115, or an organic material such as BCB or acrylic resin is coated to form a protective film 116 of FIG. 5. A predetermined portion of the passivation layer is removed to form a first contact hole 150 through which the drain electrode 115b is exposed.

Next, as shown in FIG. 7C, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited and patterned on the passivation layer having the first contact hole 150 to form each subpixel. The pixel electrode 117 which occupies most of the area | region inside is formed. At this time, when the pixel electrode 117 is formed, a part of the pixel electrode 117 is removed to form the first electric field distortion means 133 which is a slit.

The pixel electrode 117 is electrically connected to the drain electrode 115b of the thin film transistor through the first contact hole 150.

Thereafter, an organic insulator such as BCB and an acrylic resin having a low dielectric constant of about 3.5 is coated on the entire surface including the pixel electrode 117 or an inorganic insulating material such as silicon nitride or silicon oxide having a dielectric constant of about 7.2 is deposited. An insulating film (118 in FIG. 5) is formed.

After forming the insulating film, a predetermined portion of the insulating film is removed to form the second contact hole 151. The reason for forming the second contact hole 151 is to allow the second electric field distortion means to be formed in the later process to be connected to the pixel electrode.

Next, as illustrated in FIG. 7D, a transparent conductive material such as ITO or IZO is deposited and patterned on the entire surface including the insulating layer 118 to conduct the pixel electrode 117 through the second contact hole 151. The second field distortion means 131 is formed.

The second field distortion means 133 and 131 may be formed in various shapes such as a line shape, a X shape, and a + line shape, but the direction in which the liquid crystal is arranged together with the first field distortion means 133 in a subpixel is different. It is formed to form a predetermined pattern with the first electric field distortion means so as to divide a plurality of different areas. In the embodiment of the present invention, as shown in Figure 7d, it is shown to form an intersection in the shape of an oblique line.

Subsequently, an alignment layer raw material solution such as polyimide, polyamide, or photo-alignment polysiloxane-cinnamate, cellulose-cinnamate is printed on the entire surface including the second field distortion means 131, and the alignment layer The raw material liquid was heated to a temperature of about 60 ° C. to 80 ° C. to be primarily cured, then heated to a higher temperature of about 80 ° C. to 200 ° C. to be secondary cured, and then rubbed or irradiated onto the surface of the alignment film raw material liquid. The first vertical alignment layer 129 is formed.

Finally, the upper substrate on which the black matrix layer, the color filter layer, the common electrode, and the second vertical alignment layer are formed is bonded to the lower substrate, the inside of the bonded substrate is made into a vacuum state, and then a liquid crystal is formed between the two substrates using a pressure difference. To fill.

The liquid crystal is a liquid crystal having a negative dielectric anisotropy, and initially causes the long axis of the liquid crystal molecules to be perpendicular to the substrate plane.

The liquid crystal may include a chiral dopant.

In this case, the liquid crystal may be injected by a drop method such as a dispensing method. This is a method of forming a seal pattern that acts as an adhesive on the edge of the lower substrate, and spreading the liquid crystal by partially dropping the liquid crystal inside the seal pattern by a dispensing method, and then bonding the upper and lower substrates. For reference, when the drop method is applied to a large area of the substrate, the liquid crystal layer formation time is reduced, and when the negative liquid crystal is used, the liquid crystal injection time is shortened because the viscosity of the liquid crystal is large.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.

The vertical alignment mode liquid crystal display device and a method of manufacturing the same according to the present invention have the following effects.

First, the field distortion means for dividing the unit pixel into a plurality of domains is formed of a transparent conductive film in which an electric field is formed, thereby preventing the drop in transmittance by the field distortion means and controlling liquid crystal molecules in a desired direction. Nation will not occur.

Second, since both the field distortion means are formed on the lower substrate, the field distortion means of the upper and lower substrates are prevented from being misaligned by the misalignment of the upper and lower substrates, and finally, the light due to the misalignment of the field distortion means. The loss can be prevented.

1 is a plan view of a PVA mode liquid crystal display device according to the prior art.

FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1. FIG.

3 is a graph of transmittance in the PVA mode liquid crystal display device according to the prior art.

4 is a plan view of the VA mode liquid crystal display device according to the present invention.

5 is a cross-sectional view taken along line II-II ′ of FIG. 4.

6 is a graph of transmittance in a VA mode liquid crystal display device according to the present invention.

7A to 7D are process plan views of the VA mode liquid crystal display device according to the present invention.

* Explanation of symbols on the main parts of the drawings

110: liquid crystal layer 111: lower substrate

112: gate wiring 112a: gate electrode

113: gate insulating film 114: semiconductor layer

115: data wiring 115a, 115b: source, drain electrode

116: protective film 117: pixel electrode

118 insulating film 121 upper substrate

129 and 130: first and second vertical alignment layers

133, 131: first and second electric field distortion means

150,151: first and second contact holes

160: phase difference plate 161: polarizer

Claims (13)

Gate wiring and data wiring vertically crossing the substrate to define a unit pixel; A thin film transistor formed at an intersection of the gate line and the data line; A pixel electrode connected to the thin film transistor and having a first field distortion means; An insulating film formed on the entire surface including the pixel electrode; Second field distortion means connected to the pixel electrode on the insulating layer to divide the domain of the unit pixel together with the first field distortion means; And a liquid crystal layer formed between the substrate and an opposing substrate bonded to the substrate. The liquid crystal display of claim 1, wherein the first field distortion means is a slit. The vertical alignment mode liquid crystal display device according to claim 1, wherein the second field distortion means is formed of a transparent conductive film. 2. The vertical alignment mode liquid crystal display device according to claim 1, wherein a voltage equal to that of the pixel electrode is applied to the second field distortion means. 2. The liquid crystal display of claim 1, wherein the pixel electrode and the second field distortion means are connected to each other through a contact hole. The vertical alignment mode liquid crystal display device according to claim 1, wherein the first and second field distortion means are formed in a line shape, a X shape, and a + line shape. Vertically forming a gate wiring and a data wiring on a substrate, and forming a thin film transistor at an intersection point of the gate wiring and the data wiring; Forming a protective film on the entire surface including the data line; Forming a pixel electrode connected to the thin film transistor on the passivation layer, and forming first field distortion means on the pixel electrode; Forming an insulating film on the entire surface including the pixel electrode; Forming second field distortion means connected to the pixel electrode on the insulating film; And opposing the opposing substrate to the substrate, and forming a liquid crystal layer between the two substrates. 8. The method of claim 7, wherein the first field distortion means is formed of slits from which the pixel electrode is selectively removed. 8. The method of claim 7, wherein the second field distortion means is formed of a transparent conductive material. 10. The method of claim 9, wherein the second field distortion means is formed using ITO or IZO. The method of manufacturing a vertical alignment mode liquid crystal display device according to claim 7, wherein the first and second field distortion means are formed in a line shape, a X shape, and a + line shape. 8. The method of claim 7, wherein the insulating film is formed by using an organic insulating material of BCB or acrylic resin. 8. The method of claim 7, wherein the insulating film is formed using an inorganic insulating material of silicon nitride or silicon oxide.