KR20050032255A - Method for forming a micro-pattern by using a dewetting - Google Patents

Abstract

A method for forming a micro-pattern by a dewetting process is provided to form a pattern or a micro pattern on a substrate by performing a simple process using a phenomenon that liquid is dewetted from the surface of a solid. A substrate is prepared which has an arbitrary pattern surface. A surface treatment is performed on the pattern surface of the substrate. A liquid thin film material is coated on the pattern surface of the substrate. The liquid thin film material is dewetted to remove the liquid thin film material in the embossed part of the pattern surface and to make liquid thin film material remain only in the intagliated part of the pattern surface so that a thin film pattern is formed on the substrate.

Description

METHOD FOR FORMING A MICRO PATTERN USING DEWETTING {METHOD FOR FORMING A MICRO-PATTERN BY USING A DEWETTING}

The present invention relates to a method for forming a fine pattern on a substrate (for example, silicon substrate, ceramic substrate, metal layer, polymer layer, etc.), and more specifically, integrated circuit, electronic device, optical device, magnetic device, display By using the phenomenon that the liquid is dewetting on the solid surface during the manufacturing process of an element or the like, an ultrafine pattern (1 μm or less to several nm, etc.), a fine pattern (tensions to several hundred μm, etc.) or a pattern is formed on a substrate. A method of forming a fine pattern suitable for forming.

As is well known, a process of forming a fine pattern on a substrate is inevitably performed when manufacturing a semiconductor, electronic, photoelectric, magnetic, display device, and microelectromechanical device. A typical technique for forming is a photolithography method for forming a fine pattern using light.

The photolithography method is a reticle designed by applying a polymer material having a responsiveness to light (for example, a photoresist, etc.) onto a substrate on which a material to be patterned is deposited (or deposited), and having a desired pattern. The light is transmitted through the polymer material through the light, and the polymer material exposed through the developing process is removed to form a pattern mask (or an etching mask) having a target pattern on the material to be patterned. Thereafter, by performing an etching process using a pattern mask, the material laminated on the substrate is patterned into a desired pattern.

On the other hand, in the photolithography method as described above, the circuit line width (or pattern line width) is determined by the wavelength of light used in the exposure process. Therefore, in consideration of the current state of the art, it is very difficult to form an ultrafine pattern, for example, an ultrafine pattern having a line width of 100 nm or less, on a substrate using a photolithography process.

In addition, the conventional photolithography method has several steps in order to form a fine pattern on the substrate, for example, substrate cleaning, substrate surface treatment, photosensitive polymer coating, low temperature heat treatment, exposure, development, high temperature heat treatment, cleaning, etc. Not only do they have to perform long and complicated manufacturing time, but also expensive equipment is used, and these problems eventually contribute to the increase in manufacturing cost and productivity.

Recently, research and development on new pattern formation methods (lithographic methods by non-traditional methods) that can overcome the limitations of the conventional photolithography method are actively conducted everywhere, such lithography by non-traditional methods As one of the methods, a nano-imprint lithography method has been proposed.

The nanoimprint lithography method first prepares a hard mold such as silicon (Si) on which a desired pattern is formed, codes a thermoplastic polymer thin film on a substrate, and presses the mold with the mold facing the substrate. It is a method of transferring the pattern of a mold to the surface of the polymer thin film formed on the board | substrate by separating a mold from a board | substrate after processing at high temperature and high pressure in between.

The conventional nanoimprint lithography method described above has an advantage that an ultra fine pattern can be easily implemented because it uses a rigid mold such as silicon. As reported in the literature, it is known that the conventional nanoimprint lithography method can be realized up to a pattern size of approximately 7 nm.

However, the conventional nanoimprint lithography method has a disadvantage in that the mold and the substrate are deformed or damaged due to the high process pressure, and the pattern is large because the patterning is performed using the fluidity of the polymer material heated at a high temperature. In the case of, a long time is required for perfect patterning.

In addition, the conventional nanoimprint lithography method has a problem in that it requires an additional process, that is, a plasma etching process, because the polymer material of the portion pressed by the protrusion (embossed pattern) of the mold is not completely removed and remains. The problem of process addition eventually leads to the problem of deteriorating the economical pattern and the possibility of deformation of the fine pattern.

On the other hand, other examples of lithographic methods by non-traditional methods include, for example, micro-contact printing, micro-molding incapillaries, micro-transfer molding, and flexible molding. There are methods such as soft-molding and capillary force lithography. The common method is that PDMS (polydimethylsiloxane), which is a type of polymer elastomer, is used as a template.

Here, the advantage of the PDMS mold is that it is elastic, so it is easy to conformal contact with the surface of the substrate to be patterned, and because it is a low surface energy material, it is easy to separate from the substrate surface after patterning due to its low adhesion to other material surfaces. In addition, solvent absorption is easy due to high gas permeability due to the three-dimensional network structure.

On the other hand, PDMS molds are elastomers with low mechanical strength, so they are easily deformed, so that fine patterns of less than about 500 nm cannot be realized, and are largely dependent on the aspect ratio of the pattern to be realized, and are generally organic solvents such as toluene. Since the deformation occurs due to swelling due to the swelling, there is a disadvantage that a considerable restriction is placed on the selection of a polymer and a solvent to be used for patterning.

In addition, some of the methods described above may leave no residual film after patterning, but this is only possible in extremely exceptional cases, i.e., only in the case of a mold or pattern of a specific shape, the residual film does not remain. In particular, since the microcontact printing method uses a self-assembled monolayer (SAM) as a patterning layer, there is a problem in that its role as an etch-resistant layer is insufficient. The situation is mainly used for the purpose. Moreover, because SAM materials are very expensive, very careful handling is required, resulting in the troublesome process.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems of the prior arts, and an object thereof is to provide a method for forming a pattern or a fine pattern on a substrate through a simple process using a phenomenon in which a liquid is dewetted on a solid surface. .

The present invention according to one embodiment for achieving the above object is a method of forming a fine pattern of a target thin film on a substrate having a pattern surface consisting of an embossed portion and an engraved portion, the substrate having the arbitrary pattern surface. Preparing a surface, surface treating a pattern surface of the substrate, coating a liquid thin film material on the pattern surface of the substrate, and causing dewetting of the liquid thin film material, The present invention provides a method of forming a fine pattern using dewetting, by removing the liquid thin film material and leaving the liquid thin film material only in the intaglio portion, thereby forming a thin film pattern on the substrate.

According to another aspect of the present invention, there is provided a method for forming a target fine pattern on a substrate using a mold having an arbitrary pattern surface, the pattern surface comprising an embossed portion and an intaglio portion. The process of preparing a mold, surface-treating the patterned surface of the mold, coating a thin film of liquid on the patterned surface of the mold, and causing dewetting of the liquid thin film material, Removing the liquid thin film material and leaving the liquid thin film material only in the intaglio portion, pressing the mold on the substrate to transfer the residual liquid thin film material to the substrate, and performing a heat treatment process. Curing the liquid thin film material on the substrate, and removing the mold to form a polymer micro plaque on the substrate. D provides a fine pattern formation method using the wetting comprising the step of completing the.

The above and other objects and various advantages of the present invention will become more apparent from the preferred embodiments of the present invention described below with reference to the accompanying drawings by those skilled in the art.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, the core technical idea of the present invention is that, unlike the aforementioned conventional method using a rigid mold and high temperature, high pressure process conditions (nanoimprint lithography method) or pressurized contact of PDMS, which is a kind of polymer elastomer, By using the phenomenon of dewetting on a solid surface (mold surface) to form a target fine pattern, it is easy to achieve the object of the present invention through this technology.

In the present invention, the liquid thin film material is formed on the surface of the mold in order to be able to dewet the liquid thin film material on the surface of the mold on which the pattern of the embossed portion and the intaglio portion is formed. By blowing an inert gas on the upper part of the mold surface or by causing a temperature difference (temperature gradient) inside the mold to generate surface tension (surface tension that draws relatively hot liquids to a relatively cold place) Technical means are used to allow the liquid thin film material to be selectively dewetted with directivity at the mold surface.

In addition, a thin film material of a liquid is added with a solvent (for example, an organic solvent such as toluene) to adjust the viscosity to control the thickness and the dewetting speed of the liquid coating, or the surface tension of the liquid and the interfacial tension with the mold surface are appropriate. Surfactants (eg, Dow Corning, DC244, etc.) may be added or thin film property enhancers may be added so as to be controlled. Here, the thin film property improving agent (dialkylaminoalkyl benzotriazole) with the substrate, the hardness improver (ether, styrene, benzoinisobutyl ether) of the thin film, the toughness enhancer (isobornyl acrylate, 2-ethoxyethoxyethyl acrylate) of the thin film And impact resistance enhancers (2-hydroxyethyl acrylate, 2-ethylhexyl acrylate) of the thin film.

First, dropping liquid droplets on any solid surface results in wetness of the solid surface in the form of a liquid film due to interrelationships such as the surface tension of the solid and the liquid, the interfacial tension between the solid / liquid ( Wetting or dewetting in the form of liquid droplets is a well known fact in the field of surface chemistry. In this case, the liquid droplet maintains a constant angle with the solid surface, which is called a contact angle. Spreading coefficient (S) is used as an index indicating the wetting / non-wetting property of a liquid drop in a given liquid / solid system by the following equation.

In Equation 1, reference numeral γ denotes surface / interface tension, and s, l, and v denote solid, liquid and vapor, respectively.

In the above Equation 1, when S has a positive value, since the liquid wets well to the solid surface, as shown in FIG. 1A as an example, the liquid droplet is formed in the form of a thin film on the solid surface. On the other hand, if S has a negative value, the liquid droplets dropped on the solid surface, as shown in FIG. 1B, do not spread widely on the solid surface but instead condense in the form of balls. Wetting 1A and 1B, reference numeral 102 denotes a solid substrate and 104 denotes a liquid thin film material.

On the other hand, S defined in Equation 1 is a measure of only the wet / non-wetting characteristics of a given liquid / solid system, and separate parameters, ie S for how fast or slow the dewetting phenomenon will be under what conditions It is determined by the magnitude of the value, the viscosity of the liquid, the thickness of the liquid and the like.

Thus, when a liquid film is present on a flat solid surface, if the S value of this system is negative, the liquid dewetts on the solid surface, where the dewetting behavior is dry dry from any location on the solid surface. spots are created and they become wider. That is, dewetting on a flat solid surface will occur randomly (ie, randomly without selectivity and orientation), as shown in FIGS. 2A and 2B as an example. 2A and 2B, reference numeral 202 denotes a solid substrate, 204 denotes a liquid thin film material, and 206 denotes a dry spot.

Next, a process of forming a fine pattern on the substrate using the phenomenon that the liquid is dewetted on the solid surface as described above will be described.

3A to 3E are flowcharts illustrating a main process of forming a fine pattern of a polymer on a substrate by using a dewetting phenomenon in a liquid according to a preferred embodiment of the present invention.

Referring to FIG. 3A, a mold 302 having a surface patterned into an embossed portion and an engraved portion is prepared. Examples of materials of the mold 302 include inorganic materials (Si, SiO 2, ceramics, etc.), organic materials ( Polymers, elastomers (PDMS), etc.), metals, composite materials and the like can be used.

At this time, the surface of the mold 302 is filled in the intaglio portion of the pattern by using a liquid (for example, a pre-polymer liquid which can be cured with ultraviolet rays), that is, dewetting, to form a fine pattern. The surface treatment is performed so that the liquid (that is, the fine pattern of the patterned polymer) can be easily detached from the mold 302. The surface treatment method includes a self-assembled monolayer (SAM) treatment and a plasma treatment. , Heat treatment, and other chemical / physical surface treatments.

Next, a liquid thin film material 304a is formed on the pattern surface of the surface-treated mold by using a method such as dipping, spin coating, roll coating, and the like, which has a viscosity in the liquid thin film material 304a. A solvent (e.g., an organic solvent such as toluene) can be added to control the thickness and dewetting rate of the liquid coating, or a surfactant (e.g., the surface tension of the liquid and the interface tension with the mold surface can be properly adjusted. Dow Corning, DC244, etc.) may be added, or a thin film property improving agent may be added to improve adhesion to the substrate, strength of the thin film, and etching resistance.

Here, the thin film property improving agent (dialkylaminoalkyl benzotriazole) with the substrate, the hardness improver (ether, styrene, benzoinisobutyl ether) of the thin film, the toughness enhancer (isobornyl acrylate, 2-ethoxyethoxyethyl acrylate) of the thin film And impact resistance enhancers (2-hydroxyethyl acrylate, 2-ethylhexyl acrylate) of thin films.

Subsequently, an external factor is used to induce the liquid thin film material 304a formed on the pattern surface of the mold 302 to be dewetted with selectivity (i.e., selectivity to the intaglio portion) and directivity. Blows a gas such as air, a solvent / air, a solvent / inert gas, etc. in the upper portion of the mold surface (blowing in the direction of arrow A shown in FIG. 3B), or blows the gas while heated to a constant temperature. Or by causing temperature differences (temperature gradients) inside the mold to generate surface tension (surface tension that draws relatively hot liquids to relatively cold ones), allowing the thin film material of the liquid to be directed and Can be used to deweet.

Here, in the case of inducing dewetting by using a temperature gradient inside the mold, when the internal temperature of one side of the mold is raised by using a heating means such as a heater, the surface tension of a relatively cold place is increased and a relatively hot place It attracts the liquid thin film material, which is used to cause dewetting of the liquid thin film material coated on the pattern side of the mold.

Thus, by causing the dewetting of the liquid thin film material 304a coated on the patterned surface of the mold 302 using various blowing techniques or temperature gradients inside the mold as described above, an example shown in FIG. As described above, the liquid thin film material 304a remains (filled) only in the intaglio portion of the mold 302 pattern surface, and the liquid thin film material does not remain in the embossed portion of the pattern surface. That is, the liquid thin film material is selectively formed only on the intaglio portion of the mold pattern surface.

That is, according to the present invention, when manufacturing an integrated circuit, an electronic device, an optical device, a magnetic device, a display device, etc., after patterning the surface of the substrate in a desired pattern, the above-described process, that is, the surface treatment of the substrate → Thin film material coating → Through the process such as selective retention of liquid thin film material by induction of dewetting, the desired material can be selectively formed (arbitrary pattern formation) on the intaglio part of the pattern. Irradiation of the liquid thin film material remaining in the intaglio portion of the pattern can be used by curing (solidifying).

At this time, when the liquid thin film material 304a remains (filled) only in the intaglio portion of the pattern surface of the mold 302 through various blowing techniques or dewetting using a temperature gradient inside the mold, 302) Liquid embossed material may remain in the form of fine droplets on the embossed portion of the patterned surface (i.e., adversely affect subsequent processing or affect product reliability). Therefore, it is necessary to remove such fine liquid droplets.

The microliquid droplets (or microliquid residues) may be added to a microliquid droplet by adding a small amount of a liquid solvent such as acetone or toluene, for example, to move the microliquid droplets to the intaglio pattern portion in the vicinity, or The solvent may be removed by spraying or the like, or by rotating the mold 302 while spraying the solvent. Here, the solvent used for the removal of the micro liquid droplets can be removed by natural evaporation or forced evaporation.

Meanwhile, in the present invention, the liquid thin film material remaining in the intaglio portion of the mold may be transferred onto a substrate to form a polymer fine pattern.

That is, as an example, as shown in FIG. 3D, the pattern surface of the mold 302 filled with the liquid thin film material only in the negative portion of the pattern is pressed under low pressure on the substrate 306. Here, pressurizing the mold 302 at low pressure on the substrate 306 is such that the mold 302 is in uniform contact on the substrate 306.

The substrate 306 may be, for example, a PET substrate, a glass substrate, a silicon substrate, a PMMA polymer substrate, or the like. The contact between the mold 302 and the substrate 306 may be, for example, an air contact, Methods such as vacuum contact and contact in an inert gas atmosphere can be used.

Moreover, the surface of the substrate 306 may be formed by, for example, heat treatment, hexamethyldisilazane (HMDS) vapor treatment, or the like, so that the liquid thin film material 304a in the intaglio portion of the mold 302 can be easily transferred to the substrate 306. It is desirable to give a surface treatment of.

Subsequently, the pattern surface of the mold 302 in which the liquid thin film material 304a selectively remains only in the intaglio portion is subjected to pressure contact on the substrate 306, followed by heat treatment, for example, ultraviolet irradiation, a lamp (eg, an 8W black lamp). By curing the liquid thin film material 304a through heat treatment using irradiation or the like, and then removing the mold 302 from the substrate 306, as an example, the target on the substrate 306, as shown in FIG. 3E. The fine pattern 304 of the polymer is completed.

Next, the substrate (e.g., PET substrate, glass substrate) through an additional method (thin film material growth method) or attenuating method (thin film material etching method) using a polymer micropattern formed on the substrate according to various methods of the present invention. , Silicon substrates, PMMA polymer substrates, and the like, can be formed into a thin film pattern having a desired shape. Such a thin film pattern forming technique will be described.

First, a process of forming a desired thin film pattern on a substrate by an additional method (thin film material growth method) using the fine pattern of the polymer formed on the substrate according to the present invention will be described.

4A and 4B are process flowcharts illustrating a main process of forming a thin film pattern on a substrate through an additional method using a fine pattern of a polymer formed on the substrate according to a preferred embodiment of the present invention.

Referring to FIG. 4A, after the polymer fine pattern 404 having an arbitrary pattern is formed on the substrate 402 according to the above-described preferred embodiment of the present invention, the polymer fine pattern 404 is performed by performing a process such as sputtering. The thin film material 406a is formed on the entire surface of the substrate 402 on which is formed. Here, the thin film material 406a may be, for example, a conductor, an insulator, a semiconductor, an organic material, or the like.

Subsequently, the polymer micropattern 404 is removed by performing a lift-off process, whereby the thin film material 406a formed on the polymer micropattern 404 is also removed. As described above, the thin film pattern 406 having the desired shape is completed on the substrate 402.

Accordingly, a thin film pattern having a desired shape can be formed on the substrate through an additional method (thin film material growth method) using the polymer micropattern formed on the substrate according to the present invention.

Next, a process of forming a desired thin film pattern on the substrate by a decay method (thin film material etching method) using the fine pattern of the polymer formed on the substrate according to the present invention will be described.

5A through 5C are process flowcharts illustrating a main process of forming a thin film pattern on a substrate through a decay method using a fine pattern of a polymer formed on the substrate according to a preferred embodiment of the present invention.

First, in order to form a thin film pattern on a substrate by attenuating method, a thin film material to be patterned must first be formed on the substrate using a method such as spin coating before forming a polymer fine pattern on the substrate. do.

Therefore, when the polymer fine pattern 506 is formed in accordance with various methods of the present invention in the state where the thin film material 504a is formed on the substrate 502, the shape thereof is, for example, as shown in FIG. 5A. do.

Next, an etching process using the polymer fine pattern 506 formed on the thin film material 506a as an etching mask is performed to selectively remove a portion of the thin film material 504a as an example, as shown in FIG. 5B. Thereby selectively exposing a portion of the upper portion of the substrate 502.

Finally, the polymer fine pattern 506 remaining on the thin film material 504a is removed using a solvent such as acetone, and then blown with nitrogen to dry the substrate 502, for example, as illustrated in FIG. 5C. ) To a desired thin film pattern, for example, a thin film pattern 504 such as a conductor, an insulator, a semiconductor, or an organic material.

Accordingly, a thin film pattern having a desired shape may be formed on the substrate through a decay method (thin film material etching method) using a polymer micropattern formed on the substrate according to various methods of the present invention.

On the other hand, the inventors of the present invention performed an experiment to form a fine pattern on the substrate by using the phenomenon that the liquid dewetting on the solid surface according to the present invention, the experimental results are as shown in Figs. .

6A to 6F illustrate a dewetting induction method using a temperature gradient inside a mold, in which a result of selective dewetting of a liquid on a mold surface patterned into an embossed part and a negative part is continuously taken in time using an optical microscope, that is, These pictures are taken when 20 seconds, 40 seconds, 60 seconds, 80 seconds, and 100 seconds have elapsed since the start. The arrow in Fig. 6C indicates the dewetting direction, which appears when heat is applied to the lower left side of the mold (the side opposite to the arrow).

Accordingly, the inventors of the present invention coated a liquid thin film material on a mold patterned into an embossed portion and an intaglio portion, and then applied a heat to one side of the mold to cause dewetting, so that the liquid thin film material remained only in the embossed portion and the embossed portion. It was found that the liquid thin film material at was removed.

7A to 7C are optical micrographs (gradual enlarged photographs) showing experimental results of forming a fine pattern of a polymer on a substrate by selectively filling only the intaglio portion of the mold surface and then contacting the substrate to transfer and solidify it. 7A to 7C, reference numeral 702 denotes a substrate surface, and 704 denotes a polymer fine pattern that is transferred to and cured on the substrate surface.

That is, the inventors of the present invention, after leaving the liquid thin film material only in the intaglio portion of the mold, the pattern surface of the mold is brought into contact with the substrate, and after curing the liquid thin film material by heat treatment such as ultraviolet irradiation, remove the mold It was found that a thin film pattern having an arbitrary pattern was formed on the substrate.

As described above, according to the present invention, unlike the above-described conventional method using a rigid mold and processing conditions of high temperature, high pressure, or pressurized contact of PDMS, which is a kind of polymer elastomer, blowing or temperature gradient of gas or the like is performed. To cause the liquid to dewet on the gas surface (mould surface), thereby leaving the liquid thin film material in the negative portion of the mold, and contacting the mold to the substrate to transfer and cure the liquid thin film material to the target on the substrate. A micro pattern of the polymer may be formed with high precision, and a thin film pattern may be formed on the substrate through a deposition or etching process using the polymer micro pattern formed as described above.

1A and 1B are diagrams for explaining a phenomenon in which a liquid is formed in a thin film form or agglomerated in a ball form on a solid substrate when the spreading coefficient has a positive value and a negative value. ,

2A and 2B illustrate the dewetting phenomenon in which the diffusion coefficient is in the form of a liquid film on a flat solid surface when it has a positive value, and dry spots are generated from arbitrary places when it has a negative value. Drawing for

3A to 3E are process flowcharts illustrating a main process of forming a fine pattern of a polymer on a substrate by using a dewetting phenomenon in a liquid according to a preferred embodiment of the present invention;

Figures 4a and 4b is a process flow diagram showing the main process of forming a thin film pattern on a substrate through an additional method using a fine pattern of a polymer formed on the substrate in accordance with a preferred embodiment of the present invention,

5A to 5C are process flowcharts illustrating a main process of forming a thin film pattern on a substrate through a decay method using a fine pattern of a polymer formed on the substrate according to a preferred embodiment of the present invention;

6a to 6f are photographs taken in succession of time using an optical microscope of the results of the selective dewetting of the liquid on the surface of the mold patterned into the embossed portion and the negative portion;

7A to 7C are optical micrographs showing the results of experiments in which a fine pattern of a polymer is formed on a substrate by selectively filling only the intaglio portion of the mold surface and then contacting the substrate to transfer and solidify it.

<Description of the symbols for the main parts of the drawings>

302: mold 304, 404, 506: polymer fine pattern

306, 402, 502: substrate 406, 504: thin film pattern

Claims (25)

In the method of forming a fine pattern of a target thin film on a substrate having a pattern surface consisting of an embossed portion and the negative portion, Preparing a substrate having the pattern surface; Surface-treating the pattern surface of the substrate; Coating a thin film of liquid on the patterned surface of the substrate; Inducing a dewetting of the liquid thin film material to remove the liquid thin film material in the embossed portion and leaving the liquid thin film material in only the engraved portion, thereby forming a thin film pattern on the substrate Fine pattern formation method using a dewetting comprising a. The method of claim 1, The pattern surface of the substrate is surface-treated by any one of a self-assembled monolayer (SAM) treatment, plasma treatment, heat treatment, chemical / physical surface treatment, fine pattern formation method using dewetting. The method of claim 1, The method of forming a fine pattern using dewetting of the liquid thin film material is characterized in that a solvent capable of controlling viscosity and adjusting the thickness and dewetting speed of the liquid coating is added. The method of claim 1, The method of forming a fine pattern using dewetting of the liquid thin film material is characterized in that a surfactant is added to control the surface tension of the liquid thin film material and the interfacial tension between the surface of the substrate. The method according to any one of claims 1 to 4, Dewetting the liquid thin film material is caused by blowing a gas, a solvent / air or a solvent / inert gas containing air to the pattern surface of the substrate. The method according to any one of claims 1 to 4, The dewetting of the liquid thin film material is fine by using dewetting, which is caused by blowing on a pattern surface of the substrate while a gas, a solvent / air, or a solvent / inert gas containing air is heated to a predetermined temperature. Pattern formation method. The method according to any one of claims 1 to 4, The dewetting of the liquid thin film material is caused by surface tension caused by a temperature gradient inside the substrate. The method according to any one of claims 1 to 4, The fine pattern forming method may further include removing the fine liquid residue by using a trace amount of the solvent when the fine liquid residue is present on the embossed portion of the patterned surface after the dewetting. Fine pattern formation method using a. The method of claim 8, And the fine liquid residue is removed by adding a trace amount of liquid solvent to the fine liquid residue to move to the intaglio portion in the vicinity. The method of claim 8, And the fine liquid residue is removed by spraying the substrate while spraying the vapor phase solvent onto the fine liquid residue or by spraying the vapor phase solvent. In the method of forming a target fine pattern on a substrate using a mold having an arbitrary pattern surface, Preparing a mold having a patterned surface comprising an embossed portion and an engraved portion; Surface-treating the pattern surface of the mold; Coating a thin film material of liquid on the pattern surface of the mold; Causing dewetting of the liquid thin film material, thereby removing the liquid thin film material in the embossed portion and leaving the liquid thin film material in only the negative portion; Pressurizing the mold onto the substrate to transfer the residual liquid thin film material to the substrate; Performing a heat treatment process to cure the liquid thin film material on the substrate; Removing the mold to complete a polymer micropattern on the substrate Fine pattern formation method using a dewetting comprising a. The method of claim 11, The pattern surface of the mold is a fine pattern forming method using dewetting, characterized in that the surface treatment by any one of self-assembled monolayer (SAM) treatment, plasma treatment, heat treatment, chemical / physical surface treatment. The method of claim 11, The method of forming a fine pattern using dewetting of the liquid thin film material is characterized in that a solvent capable of controlling viscosity and adjusting the thickness and dewetting speed of the liquid coating is added. The method of claim 11, The method of forming a fine pattern using dewetting of the liquid thin film material is characterized in that a surfactant is added to control the surface tension of the liquid thin film material and the interfacial tension between the mold surface. The method of claim 11, The method of forming a fine pattern using dewetting of the liquid thin film material may include adding a thin film property improving agent for improving adhesion to the substrate, strength of the thin film, and etching resistance. The method according to any one of claims 11 to 15, The dewetting of the liquid thin film material is caused by blowing a gas, a solvent / air or a solvent / inert gas containing air to the pattern surface of the mold characterized in that the fine pattern forming method using dewetting. The method according to any one of claims 11 to 15, The dewetting of the liquid thin film material is fine by using dewetting, which is caused by blowing the pattern surface of the mold in a state in which a gas, a solvent / air, or a solvent / inert gas containing air is heated to a predetermined temperature. Pattern formation method. The method according to any one of claims 11 to 15, The dewetting of the liquid thin film material is caused by surface tension caused by a temperature gradient inside the mold. The method according to any one of claims 11 to 15, The fine pattern forming method may further include removing the fine liquid residue by using a trace amount of the solvent when the fine liquid residue is present on the embossed portion of the patterned surface after the dewetting. Fine pattern formation method using a. The method of claim 19, And the fine liquid residue is removed by adding a trace amount of liquid solvent to the fine liquid residue to move to the intaglio portion in the vicinity. The method of claim 19, And the fine liquid residue is removed by spraying the mold while injecting a vaporized solvent into the fine liquid residue or by spraying the vaporized solvent. The method according to any one of claims 11 to 15, The contact between the mold and the substrate is any one of air contact, vacuum contact, contact in an inert gas atmosphere, fine forming method using dewetting. The method according to any one of claims 11 to 15, The substrate is a fine pattern forming method using dewetting, characterized in that any one of a polymer, an inorganic material, a metal, a composite material. The method according to any one of claims 11 to 15, The method further comprises surface treating the substrate to facilitate transition of the residual liquid thin film material to the substrate. The method of claim 24, Surface treatment of the substrate, the method of forming a fine pattern using dewetting, characterized in that performed through heat treatment or HMDS (hexamethyldisilazane) steam treatment.