KR20050016867A - Electrochemically fabricated hermetically sealed micrstructures and methods of and apparatus for producing such structures - Google Patents

Abstract

In some embodiments according to the present invention, the multilayer structure may comprise at least one structural material (eg nickel), at least one sacrificial material (eg copper) and at least one sealing material (eg solder). It is prepared electrochemically from. In some embodiments, the layer structure is made to have a predetermined configuration that is at least partially and adjacently surrounded by sacrificial material that is almost completely surrounded by the structure material. The peripheral structure material includes an opening in the surface through which the etchant penetrates to remove the sacrificial material therein. The sealing material is located near the opening. After removing the sacrificial material, the box is emptied or filled with any gas or liquid. Thereafter, the sealing material flows to seal the opening and resolidify. In other embodiments, post-layer formation or other skin to complete the structure is added.

Description

ELECTROCHEMICALLY FABRICATED HERMETICALLY SEALED MICRSTRUCTURES AND METHODS OF AND APPARATUS FOR PRODUCING SUCH STRUCTURES}

This application claims the benefit of Provisional Patent Application No. 60 / 379,183, filed May 7, 2002 and Provisional Patent Application No. 60 / 430,809, filed December 2, 2002, which is incorporated herein by reference.

The present invention generally relates to the field of related formation of three-dimensional structures through electrochemical fabrication and layer-by-layer build up of deposited materials. In particular, the present invention relates to the formation of microstructures, for example, in which the sacrificial material is removed from the internal cavities of a package and the critical part of the structure is sealed in the cavity and the simultaneous formation of packaging for such a structure.

Techniques for forming three-dimensional structures (e.g. parts, components, devices, etc.) from a plurality of adhesive layers have been invented by Adam L. Cohen, an electrochemical fabrication. Known. It has been commercially pursued by MEMGen ^® Corporation of Burbank, California under the trade name of ^TM EFAB. This technique is disclosed in US Pat. No. 6,027,630, issued February 22, 2000. The electrochemical deposition technique can selectively deposit the material using a unique masking technique using a mask that includes a patterned conformable material on a support structure independent of the substrate on which the plating occurs. When electrodeposition is to be performed using a mask, the matching portion of the mask comes into contact with the substrate, and the contact of the matching portion of the mask with the substrate in the presence of the plating solution inhibits deposition at the selected location. For convenience, these masks are generally referred to as conformable contact masks, and the masking technique is commonly referred to as conforming contact mask plating processes. More specifically, in the terminology of MEMGen ^® of Burbank, California, such masks are known as INSTANT MASK ^TM and the process is INSTANT MASKING ^TM or INSTANT MASK ^TM Known as plating. Selective deposition using matched contact mask plating may be used to form a single layer of material, or may form a multilayer structure.

The technical idea of US Pat. No. 6,027,630 is incorporated herein by reference. Since the patent application that led to this patent, various papers have been published on conformal contact mask plating (ie, INSTANT MASKING) and electrochemical fabrication.

1. A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will, "EFAB:

Batch production of functional, fully-dense metal parts with micro-scale features ", Proc. 9th Solid Freeform Fabrication, The University of Texas at Austin, p161, Aug. 1998.

2. A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will, "EFAB:

Rapid, Low-Cost Desktop Micromachining of High Aspect Ratio True 3-D MEMS ", Proc. 12th IEEE Micro Electro Mechanical Systems Workshop, IEEE, p244, Jan 1999.

3. A. Cohen, "3-D Micromachining by Electrochemical Fabrication", Micromachine Devices, March 1999.

4. G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld, and P. Will, "EFAB:

Rapid Desktop Manufacturing of True 3-D Microstructures ", Proc. 2nd International Conference on Integrated MicroNanotechnology for Space Applications, The Aerospace Co., Apr. 1999.

5. F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, and P. Will, "EFAB:

High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated Batch Process ", 3rd International Workshop on High Aspect Ratio MicroStructure Technology (HARMST'99), June 1999.

6. A. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld, and P. Will, "EFAB:

Low-Cost, Automated Electrochemical Batch Fabrication of Arbitrary 3-D Microstructures ", Micromachining and Microfabrication Process Technology, SPIE 1999 Symposium on Micromachining and Microfabrication, September 1999.

7. F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld, and P. Will, "EFAB:

High Aspect Ratio, Arbitrary 3-D Metal Microstructures using a Low-Cost Automated Batch Process ", MEMS Symposium, ASME 1999 International Mechanical Engineering Congress and Exposition, November, 1999.

8. A. Cohen, "Electrochemical Fabrication (EFABTM)", Chapter 19 of The MEMS Handbook, edited by Mohamed Gad-EI-Hak, CRC Press, 2002.

9. "Microfabrication-Rapid Prototyping's Killer Application", pages 1-5 of the Rapid Prototyping Report, CAD / CAM Publishing, Inc., June 1999.

The contents disclosed in these nine publications are incorporated herein by reference.

The electrochemical deposition process may be done in a number of different ways as disclosed in the above patents and publications. In one form, this process involves performing the following three separate operations during the formation of each layer of the structure formed as follows.

1. Selectively deposit at least one material by electrodeposition on one or more predetermined regions of the substrate.

2. Next, the front deposition of at least one additional material by electrodeposition to cover both the region previously selectively deposited by the additional deposition and the region of the substrate which has not been subjected to the selective deposition previously applied ( blanket depositing).

3. Finally, a first thickness of a predetermined thickness having at least one region comprising at least one material and at least one region comprising at least one additional material by planarizing the material deposited during the first and second operations. Creates a flat surface of the layer.

After formation of the first layer, one or more additional layers may be formed immediately adjacent to the previous layer and adhered to the flat surface of the previous layer. These additional layers are formed by repeating the first to third operations one or more times, wherein the formation of each subsequent layer treats the previously formed layer and the first substrate as a new thick substrate.

Once all of the layers have been formed, at least a portion of the at least one deposited material is generally removed by an etching process to expose or release the three-dimensional structure to be formed.

A preferred method of performing the selective deposition included in the first operation is by conformable contact mask plating. In this type of plating, one or more matching contact (CC) masks are first formed. The CC mask includes a support structure to which the patterned mating dielectric material is bonded or formed. The mating material for each mask is formed according to the specific cross section of the material to be plated. At least one CC mask is required for each unique cross-sectional pattern to be plated.

A support for a CC mask is usually a plate-like structure formed of a metal that is optionally electroplated, where the material to be plated is dissolved. In this conventional method, the support acts as an anode in the electrodeposition process. Alternatively, the support may be a porous or holey material through which the deposition material passes from the terminal anode to the deposition surface during the electrodeposition operation. In either method, it is possible for the CC mask to share a common support, ie, a pattern of conformal dielectric material for plating a plurality of layers of material may be located in different regions of a single support structure. If a single support structure includes a plurality of plating patterns, the entire structure is referred to as a CC mask and the individual plating mask may be referred to as a "submask". In this application, this distinction is only made when associated with a particular point.

In preparation for performing the selective deposition of the first operation, the matching portion of the CC mask is pressed against the selected portion (or previously formed layer or previously deposited layer portion) of the substrate on which the deposition is to take place. Pressing both the CC mask and the substrate occurs in such a way that all openings in the matching portion of the CC mask include the plating solution. The mating material of the CC mask in contact with the substrate acts as a barrier to electrodeposition, and the openings in the CC mask filled with the electroplating solution from the anode (eg CC mask support) when the proper potential and / or current is supplied. It serves as a passage for transferring material to the non-contact portion of the substrate (which serves as the cathode during the plating operation).

Examples of CC masks and CC mask plating are shown in FIGS. 1A-1C. FIG. 1A is a side view of a CC mask 8 made of a mating or straining (eg, elastomeric) insulator 10 patterned on the anode 12. The anode has two functions. FIG. 1A also shows the substrate 6 separated from the mask 8. One function is to support the patterned insulator 10 to maintain integrity and alignment, since the pattern may be topologically complex (including, for example, islands of isolated insulating materials). It is a function as a material. Another function is as an anode for the electroplating operation. CC mask plating selectively deposits material 22 onto the substrate 6 by simply pressing the insulator against the substrate and then electrodepositing the material through openings 26a and 26b in the insulator as shown in FIG. 1B. . After deposition, the CC mask is preferably separated from the substrate 6 shown in FIG. 1C nondestructively. The CC mask plating process is distinguished from the through-mask plating process in that destructive separation of the masking material from the substrate occurs in the through-mask plating process. As in the plating through the mask, CC mask plating deposits the material selectively and simultaneously on the entire layer. The plated regions may consist of one or more isolated plating regions, where these isolated plating regions may belong to a single structure formed or to a plurality of structures formed simultaneously. Since individual masks in CC mask plating are not intentionally destroyed in the removal process, these masks may be used for a plurality of plating operations.

Other examples of CC masks and CC mask plating are shown in FIGS. 1D-1F. FIG. 1D shows the anode 12 ′ separated from the mask 8 ′ comprising the patterned mating material 10 ′ and the support structure 20. FIG. 1D also shows the substrate 6 separated from the mask 8 ′. 1E shows a mask 8 'in contact with the substrate 6. FIG. 1F shows a deposit 22 ′ that causes current conduction from the anode 12 ′ to the substrate 6. FIG. 1G shows the deposit 22 ′ on the substrate 6 after detaching from the mask 8 ′. In this example, a suitable electrolyte is located between the substrate 6 and the anode 12 'and ionic current from one or both of the solution and the anode is conducted through the opening in the mask to the substrate where the material is deposited. This type of mask is referred to as an INSTANT MASK ^™ (AIM) or an anodeless conformable contact (ACC) mask.

Unlike plating through a mask, CC mask plating allows the CC mask to be formed completely separate from the fabrication of the substrate on which the plating will occur (eg, separate from the three-dimensional (3D) structure to be formed). The CC mask may be formed in various ways, for example a photolithographic process may be used. All masks can be created simultaneously before fabrication of the structure, but not during fabrication of the structure. This separation mask is a simple, low cost, automated, standalone, which can be installed almost anywhere for manufacturing 3D structures, leaving clean room processes such as photolithography performed by service bureaus and the like. Enables an internally-clean "desktop factory".

Examples of the electrochemical manufacturing process discussed above are shown in FIGS. 2A-2F. These figures show that the process involves the deposition of a sacrificial material first material 2 and a structural material second material 4. In this example, the CC mask 8 includes a support 12 made of a patterned matching material (eg, an elastic dielectric material) 10 and a deposition material 2. The matching portion of the CC mask is pressed against the substrate 6 together with the plating solution 14 located in the opening 16 in the matching material 10. The current from the power source 18 then passes through the plating solution 14 via (a) the support 12 serving as the anode and (b) the substrate 6 serving as the cathode. 2A shows that the current flow causes the material 2 in the plating solution and the material 2 from the anode 12 to be selectively moved to the cathode 6 to be plated on the cathode 6. After electroplating the first deposition material 2 on the substrate 6 using the CC mask 8, the CC mask 8 is removed as shown in FIG. 2B. FIG. 2C shows that the second deposition material 4 has been previously deposited (ie, nondestructively deposited) on the previously deposited first deposition material 2 and other portions of the substrate. Front deposition occurs by electroplating from an anode (not shown) made of a second material to the cathode / substrate 6 through a suitable plating solution (not shown). The two material layers are then planarized to achieve the correct thickness and flatness as shown in FIG. 2D. After repeating this process for all layers, the multilayer structure 20 formed of the second material 4 (i.e., the structure material) is formed from the first material 2 (i.e., sacrificial material), as shown in FIG. 2E. Buried in). As shown in FIG. 2F, the embedded structure is etched to form the desired device, ie structure 20.

Various components of a typical passive electrochemical manufacturing system 32 are shown in FIGS. 3A-3C. System 32 consists of several subsystems 34, 36, 38, 40. A substrate holding subsystem 34 is shown on top of each of FIGS. 3A-3C, wherein (1) carrier 48, (2) metal substrates 6, 3 on which layers are deposited. It includes several components, such as a linear slide 42, which can move the substrate 6 up and down relative to the carrier 48 in response to the driving force from the actuator 44. Subsystem 34 also includes an indicator 46 that measures the difference in the vertical position of the substrate used to set or determine the thickness of the layer and / or the deposition thickness. Subsystem 34 also includes legs 68 for carrier 48 that can be accurately mounted on subsystem 36.

The CC mask subsystem 36 shown in the lower part of FIG. 3A is (1) a CC mask 8 formed of a plurality of CC masks (ie, submasks) sharing a common support / anode 12 (2) Precision X-stage 54, (3) Precision Y-stage 56, (4) Frames 72, (5) Electrolytes that can be mounted by legs 68 of subsystem 34 It includes several components, such as tank 58, which includes 16. Subsystems 34 and 36 also include suitable electrical connections (not shown) that connect to the appropriate power supplies to perform the CC masking process.

The front deposition subsystem 38 is shown at the bottom of FIG. 3B and includes: (1) anode 62, (2) electrolyte tank 64, and (3) subsystem 34 for receiving plating solution 66. And several components, such as frame 74, on which legs 68 are located. Subsystem 38 also includes suitable electrical connections (not shown) that connect the anode to a suitable power source to perform the front deposition process.

The planarization subsystem 40 is shown at the bottom of FIG. 3C and includes a wrapping plate 52 and an associated movement and control system (not shown) for planarizing the deposit.

Another method of forming microstructures from electroplated metals (ie, using electrochemical fabrication techniques) is described in Henry Guckel, US Pat. No. 5,190,637, "Formation of Microstructures by Multiple Level Deep X-ray Lithography with Sacrificial Metal layers". Is disclosed. This patent discloses the formation of metal structures using mask exposure. The first layer of primary metal is electroplated on the exposed plating base to fill voids in the photoresist, then the photoresist is removed, and the secondary metal is electroplated on the first layer and the plating base. do. The exposed surface of the secondary metal is then pressed into the machine to a height that exposes the first metal, creating a planar uniform surface extending across both the primary and secondary metals. Formation of the second metal may then commence by applying a photoresist layer on the first layer and repeating the process used to create the first layer. Then the process is repeated until the entire structure is formed and the second metal is removed by etching. The photoresist is formed on the plating base or previous layer by casting, and the voids in the photoresist are formed by exposure of the photoresist through the patterned mask through X-ray or UV radiation.

Electrochemical fabrication can be used to form complex shaped structures using electrodepositable materials, but there is a need for reliable, cost effective and improved methods for packaging such objects.

1A-1C are schematic side views of various stages of a CC mask plating process, and FIGS. 1D-1G are schematic side views of various stages of a CC mask plating process using different types of CC masks.

2A-2F are schematic side views of various stages of an electrochemical fabrication process applied to the formation of a particular structure, wherein the sacrificial material is selectively deposited while the structure material is entirely deposited.

3A-3C are schematic side views of several exemplary subassemblies that may be used to manually implement the electrochemical manufacturing method shown in FIGS. 2A-2F.

4A-4I schematically illustrate that the front deposition of a second material forms a first layer of a structure using adhesive mask plating covering both the opening between the deposition location of the first material and the first material itself; .

5A is a block diagram of the basic steps of the first embodiment group.

FIG. 5B shows, in block diagram form, the basic steps of a second embodiment group; FIG.

6A-6C are side views of various stages of the creation of a structure in accordance with a preferred embodiment of the present invention.

FIG. 6D is a top view of the upper two layers of the structure of FIG. 6B separated and superimposed.

7A and 7B show another configuration of the sealing layer of Fig. 6B.

FIG. 8A is a side view showing another configuration for the last two layers of FIG. 6B, and FIG. 8B is a plan view of the top two layers of another structure, first separated from each other and then superimposed

9A-9D are side and top views illustrating a sealing configuration for features and enclosing walls of other openings.

10A-10H illustrate several different opening and sealing configurations.

11A-11C illustrate several different opening and sealing configurations.

12A-12C illustrate several different opening and sealing configurations.

13A and 13B illustrate different opening and sealing techniques.

14A and 14B show another technique for sealing the opening.

15A-15F are side views of various states of another embodiment of packaging a structure.

16A-16F are side views of various states of another embodiment of packaging structure.

17A and 17B are side views associated with other configurations of removing sacrificial material and sealing a package.

18A-18B are side views of another configuration for removing sacrificial material and sealing a package.

FIG. 18C is a side view corresponding to the skin and cover of FIG. 18A; FIG.

18D is a side view of another configuration for removing the sacrificial material and sealing the package.

It is an object of various aspects of the present invention to provide an improved packaging method for critical structures.

Another object of various aspects of the present invention is to provide a method of simultaneously producing structures and their packaging.

Another object of various aspects of the present invention is to provide a sealed structure in a hermetic manner.

Other objects and advantages of various aspects of the invention will become apparent to those skilled in the art upon reviewing the disclosure. The various aspects of the invention, either explicitly described herein or identified from the disclosure, may achieve either of the above objects, alone or in combination, or none of the above disclosed objects, Instead, some other object identified from the spirit of the present invention may be achieved. All of these objects may be achieved for some aspects, but are not intended to be achieved by either aspect of the invention.

In a first aspect of the invention, an electrochemical fabrication process for creating a three-dimensional structure from a plurality of adhered layers comprises the steps of: (A) depositing at least a portion of the layer onto a substrate. The substrate may comprise a pre-deposited material— and (B) forming a plurality of layers such that each successive layer is formed adjacent to the pre-deposited layer and attached to the pre-deposited layer. Wherein said layers comprise at least three different materials, said layers comprising (1) a structural element formed of at least one structural material as a desired structural component to be protected; (2) a protective enclosure formed at least in part from a structural material, at least a portion of the envelope at least partially surrounding the given structural element, The outer shell is limited by at least one opening therein- (3) a sealing material located near the at least one opening, and (4) between the given structural element to be protected and at least a portion of the outer shell. Patterns of material including at least partially positioned sacrificial material, and after formation of the layers, at least a portion of the sacrificial material positioned between the given structural element and at least a portion of the sheath is removed, and the sacrificial material After removal of the material, the sealing material temporarily flows to seal the at least one opening, thereby blocking or significantly limiting the passage of material through the at least one sealed opening from the outside of the sheath into the interior of the sheath. .

In a second aspect of the invention, an electrochemical fabrication process for creating a three-dimensional structure from a plurality of adhered layers comprises the steps of: (A) depositing at least a portion of the layer onto a substrate. The substrate may comprise a pre-deposited material— and (B) forming a plurality of layers such that each successive layer is formed adjacent to the pre-deposited layer and attached to the pre-deposited layer. Wherein said layers comprise at least two different materials, said layers comprising: (1) a structural element formed of at least one structural material as a desired structural component to be protected; (2) a protective enclosure formed at least in part from a structural material, at least a portion of the envelope at least partially surrounding the given structural element, The outer shell is limited by at least one opening therein- and (3) patterns of material comprising a sacrificial material at least partially located between the given structural element to be protected and at least a portion of the outer shell. And after formation of the layers, at least a portion of the sacrificial material located between the predetermined structure element and at least a portion of the sheath is removed, and after removal of the sacrificial material, a seal between the protective sheath and the sealing structure ( a seal is formed, and the at least one protective sheath or sealing structure is adapted to block or significantly restrict the passage of material through the at least one sealed opening from the exterior of the sheath into the interior of the sheath. Sealing material used to establish the sealing of the opening.

In a third aspect of the invention, an electrochemical fabrication process for creating a three-dimensional structure from a plurality of adhered layers comprises the steps of: (A) depositing at least a portion of the layer onto a substrate. The substrate may comprise a pre-deposited material— and (B) forming a plurality of layers such that each successive layer is formed adjacent to the pre-deposited layer and attached to the pre-deposited layer. Wherein said layers comprise at least two different materials, said layers comprising: (1) a structural element formed of at least one structural material as a desired structural component to be protected; (2) a protective enclosure formed at least in part from a structural material, at least a portion of the envelope at least partially surrounding the given structural element, The outer envelope is limited by at least one opening therein; and (3) at least one blocking structure located along a line of sight including the at least one opening but away from the protective shell; (4) patterns of material comprising a sacrificial material at least partially located between the predetermined structure element to be protected and at least a portion of the sheath, and after formation of the layers, the predetermined structure element and the sheath At least a portion of the sacrificial material located between at least a portion of is removed, and after removal of the sacrificial material, the sealing material is deposited so as to contact the barrier material that prevents the sealing profile from entering the shell in the bulk. Sealing the at least one opening by continued deposition of sealing material, thereby Blocking or significantly restricting the passage of material from the at least one sealed opening into the interior of the sheath.

In a fourth aspect of the invention, an electrochemical fabrication process for creating a three-dimensional structure from a plurality of adhered layers comprises depositing at least a portion of layer (A) on a substrate—the substrate May comprise a pre-deposited material— and (B) forming a plurality of layers such that each successive layer is formed adjacent to and deposited on the pre-deposited layer. Wherein said layers comprise at least two different materials, said layers comprising (1) a structural element formed of at least one structural material as a desired structural component to be protected, (2) a protective enclosure formed at least in part from the structural material, at least a portion of the envelope at least partially surrounding the given structural element, The outer shell is limited by at least one opening therein- and (3) patterns of material comprising a sacrificial material at least partially located between the given structural element to be protected and at least a portion of the outer shell. do.

Additional aspects of the present invention will be appreciated upon review of the disclosure. Other aspects of the invention may include combinations of the foregoing aspects of the invention and / or the addition of various features of one or more silencing examples. Other aspects of the present invention may include an apparatus that may be used to practice one or more of the above method aspects of the present invention. These and other features of the present invention may provide various combinations of the foregoing aspects, and may provide other configurations, structures, functional relationships, and processes not specifically described above.

1A-1G, 2A-2F, and 3A-3C illustrate various features of one form of known electrochemical preparation. Other electrochemical manufacturing techniques are disclosed in U.S. Patent No. 6,027,630, supra, in the publications mentioned above, in several other patents and patent applications incorporated herein by reference, and other techniques disclosed in these publications, patents, and patent applications. It may be derived from a combination of several methods or may be apparent to one skilled in the art from the ideas known or disclosed in other ways. All of these techniques may be combined with the techniques of various embodiments of various aspects of the present invention to produce an improved embodiment. Still other embodiments may be derived from combinations of the various embodiments explicitly disclosed herein.

4A-4I illustrate the various steps of a single layer formation of a multilayer fabrication process in which a second metal is deposited on the first metal and deposits in openings in the first metal forming part of the layer. 4A shows a side view of the substrate 82, and as shown in 4B, a patternable photoresist 84 is cast on the substrate. In FIG. 4C, a pattern of resist is formed by curing, exposure and development of the resist. Patterning of the photoresist 84 forms openings 92 (a) through 92 (c) extending from the surface 86 of the photoresist to the surface 88 of the substrate 82 through the thickness of the photoresist. . In FIG. 4D, metal 94 (eg nickel) is electroplated into openings 92 (a) through 92 (c). In FIG. 4E, the photoresist is removed from the substrate (ie, chemically peeled off) to expose an area of the substrate 82 that is not covered with the first metal 94. In FIG. 4F, a second metal (eg, silver) is electroplated on the entire exposed portion of the substrate 82 (conductive) and on the first metal 94 (conductive). 4G shows the first layer of the finished structure planarizing the first and second metals down to a height that exposes the first metal and sets the thickness for the first layer. In FIG. 4H, the results of multiple steps of the process steps shown in FIGS. 4G-4G are repeated several times to form multiple layers of two materials. In most applications, one of these materials is removed as shown in FIG. 4I to create the desired 3D structure 98 (eg, device or device).

In various implementations disclosed herein, alternatives and techniques may be used with electrochemical fabrication techniques using different types of patterning masks and masking techniques. For example, a matching contact mask and masking operation may be used, and at least partially shielding the substrate by proximity to the substrate even when no proximity mask and masking operation (ie, no contact is formed). An operation using a mask may be used, and an adhesive mask and a masking operation (a mask and operation using a mask bonded to a substrate on which selective deposition or etching will take place as opposed to just contacting a substrate) may be used.

5A shows in block diagram form the basic steps of a first embodiment group of the invention. Block 102 comprises (1) an element of the structure to be protected, (2) a protective sheath formed of structure material but having at least one opening therein, (3) a sealing material located near at least one opening, (4) There is a need for the formation of a group of electrochemically prepared layers comprising a sacrificial material at least partially positioned between the structure to be protected and the protective sheath. The electrochemical manufacturing process used may be similar to one of those shown in FIGS. 1A-1C and 2A-2F or other processes disclosed in US Pat. No. 6,027,630, processes disclosed in one of the aforementioned publications, disclosed below. It may be a process disclosed in one of the patents or patent applications included in the list of patents and patent applications, or a combination of the various methods described in these publications, patents and patent applications, or other processes known to those skilled in the art. .

After the layers are formed, the process proceeds to block 104 and requires removal of the sacrificial material.

Next, at block 106, the process requires selectively emptying the area between the enclosure and the structure to be protected. The process also includes refilling the area with a predetermined fill gas. The filling gas may be for example inert (eg N ₂ , Ar, etc.) or may be chemically active, such as to provide a reducing environment (eg H ₂ ). . The process may include some special treatments useful for preparing the structure / envelope bond for subsequent operation.

Finally, at block 108, the sealing material temporarily flows to close at least one opening.

6A-6C are side views of various steps of the process sequence of FIG. 5A applied to a particular structure. 6A shows a group of layers 112 electrochemically fabricated and attached to a substrate 114. The group of layers is formed of (1) the structure material and the protective shell 124, (3) opening of the element 122 of the structure to be protected, (2) the structure material but having a plurality of openings 126 therein. And the sacrificial material 132 filling the interior 134 (ie, the cavity) of the enclosed sealing material 128 and (4) shell 124.

6B illustrates the substrate 114, skin 124, elements 122 and sealing material 128 of the substrate, prior to flowing, sealing and resolidification of the sealing material after removal of the sacrificial material. ) The sacrificial material is preferably removed by etching using an etchant that enters the cavity through the opening in the shell.

6C shows the flow of the sealing material, the substrate 114 after the sealing and resolidification, the shell 124, the elements 122 of the structure, and the sealing material 128. In this embodiment, the elements of the structure are to be protected in a package defined by the skin and the substrate. In this embodiment, the sealing material is preferably a low melting temperature electroplatable metal or a solder-like material such as indium (In) or tin (Sn) / lead (Pb). The sacrificial material may be copper and the structure material may be nickel, of course other suitable materials may be used. However, etching of the sacrificial material should not damage the element 122 of the structure or cause significant damage to the sealing material 128.

FIG. 6D is a top view of the uppermost layer of FIG. 6B. The leftmost element 142 is located after the last layer, which is the cover of the shell 124, and includes an opening 126 and is formed of a structural material. Element 144 is the last layer of the structure and is formed of sealing material 128. Element 144 also includes an opening 126. Element 144 is surrounded by a dashed border 148 that represents the outer boundary of element 142 when the two elements are aligned. Element 146 shows the top view of two elements 142, 144 with apertures 126 aligned and overlapping.

7A and 7B show another configuration of the sealing layer of FIG. 6B. In FIG. 7A, the sealing material includes a single cross-bar 152 that bridges the opening because it is believed that the bridge may help close the opening as the sealing material flows. FIG. 7B is similar to FIG. 7A except that two crossed bridging elements 154 and 156 are shown.

FIG. 8A is a side view of another configuration for the last two layers of FIG. 6B, and FIG. 8B is a plan view of the last two layers including another sealing layer. Last Layer The next layer 142 has not changed its configuration from the configuration in FIG. 6D, but the last layer 144 ′ has changed. Instead of the last layer consisting of a rectangular plate with holes therein as in the case of FIGS. 6A-6D, in FIGS. 8A and 8B, the sealing material around each opening is in the form of a ring which is best shown in FIG. 8B, More specifically, the ring has a smaller inner diameter than the hole 126 in the layer 142. Partial overlap of the sealing material with holes 126 in the layer 142 helps to fill and seal the opening as the sealing material flows.

9A is formed of the structure material except the third layer for the last layer from the top, which is the sealing material layer 162. The sealing material layer is shown in the top view of FIG. 9B, where a plurality of openings 126 ′ through the sealing layer can be seen. As the sealing material flows, it spreads and collapses to bridge the openings to seal these openings. Collapse of the sealing layer can be seen in the side view of FIG. 9C. The spreading of the sealing material to close the opening can be seen in the plan view of FIG. 9D, where the dotted structure represents the original configuration of the sealing material layer 162 and the spreading material 166 represents the new configuration after the flow of the sealing material. . In another embodiment, collapse of the sealing layer and spread of the sealing material are facilitated by applying pressure or force on top of the structure.

FIG. 10A illustrates the thickness (eg, one or more layers) of envelope 172 formed of the material of the structure and having an opening 174 therein with an inclined surface 176 therein. Sealing material layer 178 is shown above the structure material layer. The inclined surface 176 is shown as having a step, but in other embodiments may be of a more fully inclined configuration. When the sealing material flows to help close the opening, it is contemplated that the slope (or step) may help the flowable sealing material to wet the surface of the opening 174. 10B shows the closure of the opening of FIG. 10A after the sealing material is allowed to flow and resolidify.

10C is a top view of the opening of FIG. 10A when the opening is circular and the staircase has an internal diameter that gradually changes. FIG. 10D illustrates another alternative to the opening of FIG. 10A, wherein the opening is substantially circular but has a radial opening cut surface, which cut size of the opening to improve injection of etchant and removal of the sacrificial material. But it does not form an opening so large that the sealing material has a difficult time bridging the gaps. FIG. 10E is similar to FIGS. 10C and 10D except for the rectangular holes in contrast to the round holes. The openings in FIG. 10E are shown almost square, but in practice may extend with a slope on each side of the long opening. If extended, the number of slots through the stairs may increase.

10F illustrates another configuration for the sealing material 178 for the opening 174 in the shell structure 172. The sealing material extends symmetrically beyond the edge of each side of the top of the opening in sheath 172. This configuration will help to close the hole once the material flows. 10 g shows that a portion of the sealing material over the top extends substantially past the middle of the opening, preferably on a substantially lower portion of the structure bordering the opposite side of the opening, so that the material is heated when the flowable material is heated. A configuration different from that of FIG. 10F is shown in that flow flows to collapse the far side of the opening to seal it. FIG. 10H differs from the configuration of FIG. 10F in that the opening through the structure material is asymmetric and the material of the structure is formed in such a way that the opening in the sealing material 178 is not intermediate, as in FIG. 10G. FIG. 10I shows another example where a portion overlying includes a balloon 180 of sealing material attached thereto. The expansion of this material is believed to be useful for helping to close the opening as the sealing material flows. Alternatively, the inflation portion of the material may extend to cover most of the entire right side of the inclined surface.

FIG. 11A shows five layers of structural material 181-185 that form part of the shell and have openings 186 therein. The structure layer is configured to include a protrusion 188 that protrudes toward the opening. A large amount of sealing material 192 is located above this protrusion. Once the sealing material is fluid, it is contemplated that the protrusion 188 helps to seal the gap in the narrow region and to keep the sealing material in place when contact is made between the faces. In this and other embodiments, it may be particularly advantageous to treat the skin by reducing gas or other activation process after removing the sacrificial material and before the sealing material flows. Activation of the surface may help to allow the flowable sealing material to wet the surface of the structure material. In particular, when the structure material is activated, the activation starts from one side of the opening, and the side closest to where the activation is started is activated higher, so that when the sealing material wets the surface of the structure material, the flow material is directed in that direction. It may be desirable to direct the sealing material towards the opposite side of the opening because it can be expected to have a tendency to move toward. In this way, if the sealing material is directed to the interior of the skin and activation is initiated from the exterior of the skin, higher activation levels may be directed to the outward extension of the opening, facilitating the flow of material to move in the correct direction for sealing of the opening. something to do.

11B shows another configuration for the sealing material. This configuration may prevent the sealing material from flowing across the surface of the unwetted structure material because the sealing material is deposited on the protrusions and only requires internal expansion by surface tension. In this type of embodiment, though not necessarily, it is desirable to activate the surface of the structure material. FIG. 11C illustrates another case where an expansion of the sealing material is provided in the pocket 194 adjacent the opening. Since the surface tension allows to minimize the surface area of the sealing material, it is believed that this pocket of material adjacent to the thinner area 196 of the sealing material may tend to pull the material from such thinner area, thus sealing the opening. Increase the swelling of the pocket to help.

12A-12C illustrate before and after deposition of the sealing material in different potential opening configurations. In these configurations, the structure material is indicated by reference numeral 202, the deposited sealing material is indicated by reference numeral 204, and the flowed material is indicated by reference numeral 204 '.

Figure 5b shows in block diagram form the basic steps of a second group of embodiments of the invention. In this figure, elements similar to those in FIG. 5A are denoted by like reference numerals. In block 102 ', (1) an element of the structure to be protected, (2) a protective sheath formed of structural material but having at least one opening therein, (3) at least partially between the structure to be protected and the protective sheath It requires the formation of a group of electrochemically prepared layers comprising sacrificial materials located. Block 102 'also indicates that the formed layers may include a sealing material located near at least one opening.

After the layers are formed, the process proceeds to block 104 and requires removal of the sacrificial material. This may be done in a manner that enables selective removal of the sacrificial material without damaging the structure material (eg, selective chemical etching or melting).

Next, at block 106, the process requires selectively emptying the area between the skin and the structure to be protected. The process also includes refilling the area with a predetermined fill gas. The filling gas may be for example inert (eg N ₂ , Ar, etc.) or may be chemically active, such as to provide a reducing environment (eg H ₂ ). . The process may include some special treatments useful for preparing the structure / envelope bond for subsequent operation.

The process then proceeds to block 110 and requires moving the sealing structure to a position relative to the rest of the shell. The sealing structure may comprise a sealing material. Typically, at least one layer or structure formed comprises a sealing material. One skin or sealing structure may also or alternatively comprise an adhesive. Movement of the sealing structure may be by translation, rotation or a combination thereof. The movement may cause a phase change or a relative movement, for example, by pushing the structure or by the pressure of air, by a breakage when the sacrificial material is removed, by movement due to stress generated during the stack formation, or the like. It may also be caused by.

Finally, at block 108 ′, the sealing material temporarily flows while the shell and sealing structure are engaged.

13A and 13B illustrate an example according to one of the embodiments of the group outlined in FIG. 5B. 13A shows cover 212 positioned over wall 214. The wall covers the sealing material 216. After removal of the sacrificial material (not shown), the lid is placed down and the sealing material 216 is formed to flow (eg, the lid is heated). The sealing material is pressed to form a seal between the cover and the wall. The lid 212 may be formed by an electrochemical manufacturing process or may be formed in other ways. The cover may be a different material than the rest of the skin. The cover may be a dielectric or transparent material.

In some embodiments, as shown in FIGS. 13A and 13B, the walls of the skin are made simultaneously with the structure but the cover is not. The wall may or may not have an etching hole therein. The last layer of the formed structure may have a planarized or unplanarized applied sealant (eg, some type of solder). In order to release the structure in the box after etching, a separately manufactured cover (eg, some type of metal sheet) is placed over the structure. This is done on a wafer scale or on an individual device. Solder (or other material) is formed to flow and the device is sealed. This method offers several advantages: (1) The device or structure can be easily visually inspected before sealing. (2) Additional processing (eg, metallization, passivation, testing, etc.) may be performed before sealing. (3) Release etching will be less problematic. (4) The problem with the application or planarization of a flowable material may be minimized. (5) One or more EFAB generating layers can be removed by use of the original patterned sheet. (6) The cover may be formed of a material which is not easily electrodeposited. (7) Since the surface of the cover and the wall can be pressed together, the wetting of the surface of the wall and the cover surface by solder becomes less important.

In other embodiments, solder (or other flowable sealing material) may be deposited on the lid rather than on the wall.

Many alternatives to the above embodiments are possible and many additional embodiments will be apparent to those skilled in the art. Multiple structure materials may be used. Many types of flowable materials may be used. The elements and shells of the structure may be formed of different materials or even multiple materials. One or more flowable materials may be used for sealing, and other flowable materials may be used to cause displacement of the structure relative to each other, thus helping to automatically seal the structure after removal of the sacrificial material. Interconnection may be provided through the skin or substrate to make electrical connections to the structure inside the skin. The lid structure or substrate may have an opening covered by a transparent window, so that the optical element may be embedded inside the envelope so that the optical signal is transmitted into and out of the envelope. The substrate may comprise a conductively coated transparent structure (eg, glass), wherein the coating may be removed with the removal of the sacrificial material or after removal of the sacrificial material. On the other hand, a sufficiently conductive and optically conductive coating may be applied to a transparent substrate such as glass, quartz, or the like.

Various techniques may be used to improve and supplement the processes described above.

IR backflow may be used to more evenly heat and minimize heating of the substrate (eg device) and substrate to be protected. In this process, an IR source larger than the substrate is placed in a fixed position parallel to the solder layer. The substrate can be moved relatively perpendicular to the plane of the layers (ie along the z axis) to be adjacent to the IR source, or can be fixed past the source or moved past the source on the conveyor.

An alternative heating method is to use a hot plate. In this method, the solder layer or the cover of the structure material in contact with the solder is brought into actual contact with the hot plate. The plate can be handled to improve the wetting of the solder. The plates may be brought into contact by movement along the z axis and may be moved by lateral movement. In more extreme cases, the plate can carry solder and the packaging layer need not be plated with solder. As an alternative to the use of a hot plate, it is also possible to bring the layer with openings into contact with the molten sealing material (eg molten solder), which melts and sticks to the surface when wet and withdrawn. And seal the opening.

Various surface treatments may be used to enhance the wetting of the sealing material (eg, solder) to the structure material. Chemical treatment agents such as solvents, resins, surface activators may also be used. Electrochemical and plasma treatments may also be used. It may also be possible to add surface treatment chemicals to the etchant used to remove the sacrificial material.

A reduction process may be used to reduce the oxide layer that may impede the flow of the sealing material to improve wetting. In one embodiment, a reducing atmosphere (eg hydrogen) is provided before the sealing material is allowed to flow. The sealing material remains below its melting point until the oxide layer is fully reduced. The reducing atmosphere may then be replaced by an inert gas (eg N ₂ ). The inert gas may then be emptied to create an empty space or maintained. While the sheath is left empty or filled with a certain gas, the temperature increases to a countercurrent temperature or to a predetermined temperature above the countercurrent temperature, whereby a sealing is achieved by the flow of the sealing material, after which the temperature is reduced to melt the sealing material May solidify.

In some embodiments, wicking structures may be used to aid in the flow of the sealing material. Ideally, the openings are sized and positioned so as to provide the maximum area for the etchant flow, but provide the least challenge for wetting by the sealing material. The circuit opening may not be optimal and a longer, narrow opening (slot) or star shape may be more desirable, but other alternatives may still exist. The circular opening can be more easily clogged (ie sealed) by adding a wet structure. The simple wet structure is a line bisecting the opening shown in FIG. 7A. This line may be in the structure material or the sealing material or both (eg, adjacent to each other). The line may be arcuate from the plane of the layer or nonlinear (eg curved or variable dimension). More complex wet structures may have one or more concentric rings connected by one or more sets of lines (eg, two sets of nutrient lines).

In other embodiments, it may be possible to perform deposition to fill the holes, particularly where such deposition is essentially a straight line process, and the structural elements below the holes allow the deposition stop and the deposit to seal the opening. This is the case when it is positioned to act as a build up which can be charged for. This is explained using Figs. 14A and 14B. 14A shows a cover or wall of packaging structure 302, under which there is an element to be sealed (not shown). The wall or cover includes an opening 304, under which there is a blocking element 306. The sacrificial material located under the wall or cover 302 is at least partially removed through the opening 304. After removal, the package may be filled with a given gas or other material and may remain empty. Substantially or at least most linear deposition processes (eg, via PVD) may be used to deposit sufficient material in the holes to seal the holes. This sealing is shown in FIG. 14B through the deposition of material 308. In FIG. 14B, deposition 308 of material is shown as being optional. In another example, the material may be deposited in frontal fashion.

In another embodiment, a PVD or other deposition operation is performed on the sealed openings to enhance the welded seal of the solder type sealer, such that the material tends to be more hermetic (eg, Metal or glass). In another embodiment, it is possible to perform an electrodeposition operation on the solder sealed opening to improve the sealing. In other embodiments, the sealed package may include a getter material.

Another embodiment will be described with reference to FIGS. 15A-15F. In FIG. 15A, a device 424 (eg, a capacitor as shown herein) is fabricated on top of a metal release layer 408 (eg, low melting solder) applied to a temporary substrate 402. It became. In FIG. 15B, the sacrificial material 420 was partially etched before attaching the final substrate. Since the device as a whole and the individual elements of the device may be moved from the desired position, it is desirable to completely release the device inside the package, but as much etching as possible is done at this time. For prolonged etching, each independent element of the device extends upwards to form an anchoring segment (not shown or required in this example) that is embedded in the sacrificial material during this initial etching. If not provided (eg due to a relatively short height), the elements will be separated. In embodiments where the structure is coupled to the sidewalls, a complete etch can be made.

In FIG. 15C, the structure is attached to the final substrate 432 coated with an adhesive layer 438 (unless the substrate is formed of a thermoplastic material or other material that can attach to the structure material itself). The adhesive is preferably of a type in which a weld seal or near weld seal can be achieved, and a type having good adhesion to the structure material is preferred.

In FIG. 15D, the release layer was removed (by melting in the case of solder) and the temporary substrate was removed (if necessary, the rest of the release layer could be removed by etching, lapping, polishing, etc.). In FIG. 15E, the remaining sacrificial material was etched through the holes in the package. In FIG. 15F, the solder (typically having a higher melting point than the solder used for the release layer) is melted to seal the device (this step is generally done in a heating chamber or vacuum chamber filled with a predetermined gas).

Other embodiments are shown in FIGS. 16A-16F. In this example, individual isolated elements (elements, devices, etc.) of the structure may be attached to the inner surface of the package and other elements to fully etch the sacrificial material while the isolated elements maintain their position. Only a single small hole 446 is required to be sealed by solder 450 (multiple holes may be provided in some other embodiments), and the interior of the package may be air at atmospheric pressure (eg, If the operation of attaching the structure 424 and the shell 462 to the final substrate 480 can be performed in a given gas or vacuum environment, as compared to an inert gas or a vacuum, this hole with adjacent solder is not required. Do not. The sole purpose of the holes and solders is to allow the internal atmosphere of the package to be created after 'substrate swapping' is complete. In FIG. 16A, the top layer device 424 was first fabricated on a metal release layer 474 (eg, low melting solder) applied to the temporary substrate 444. High aspect ratio of high melting point solder (in fact, low melting point solder may be used, in which case the pillars are separated during the step leading to the state shown in FIG. 16D as compared to during the separation operation shown as completed in FIG. 16E). 'Pillar' 456 was provided to join the individual elements of the device during subsequent etching. In FIG. 16B, the sacrificial material 468 has been fully etched before attachment of the final substrate 480. In FIG. 16C, the structure was adhered to the final substrate coated with an adhesive layer 486. In FIG. 16D, the release layer 474 is shown removed or is intended to release grips on the temporary substrate 444, and the temporary substrate is shown removed. In FIG. 16E, the higher melting point solder 456 melts to seal the device and causes it to ball up as the pillar becomes unstable when molten due to high aspect ratio (length / diameter). The example group provides an enclosure with a movable attached sealing structure (eg, a lid). In these embodiments, the sealing structure is initially positioned to allow etching, and then moves or descends to the sealing position. By attaching the sealing structure to the sheath, the sheath remains attached to the sheath during etching and possibly positioned in improved alignment thereafter. In some embodiments, attachment elements may be added by one or more alignment elements. In some of these embodiments, one or more attachment elements and / or alignment elements may be used. In some embodiments, these attachment and / or alignment elements may be located around the skin and / or sealing structure. In some other embodiments, they may be located internally around the sheath or sealing structure.

In some embodiments, the movement of the sealing structure relative to the skin allows the alignment or attachment element to proceed further into the interior of the skin, thus requiring sufficient clearance between the elements and the structure (device) being packaged. In some other embodiments, the alignment and / or attachment elements may be mounted on the sheath itself, so that when sealing occurs, no shrinkage of the inner space of the sheath occurs.

Examples of structures constructed and packaged according to this group of embodiments are shown in FIGS. 17A and 17B, which diagrammatically illustrate aspects of packages and structures in pre-sealed and sealed states. 17A shows a sealing structure or cover element 508 with an attachment element 510. Cover element 508 is spaced from sheath 506 that is mounted to substrate 502, which together define an interior region 514 in which structure 504 is located. Attachment element 510 protrudes through an opening in the containment structure that forms part of sheath 510. Cover 508 and / or sheath 506 (both shown) include a sealing material 512 (eg, a solder or sealable adhesive). 17B shows the sheath and cover after being joined to each other. The sealing material is then melted or adapted to seal the shell.

In the embodiment shown, a flow passage for etching the structure is located along the periphery of the skin. This may be acceptable in some embodiments, but if the sheath is relatively large, excess etchant from the edge or perimeter of the structure is problematic (eg, slow etch time, damage caused by exposure to the etchant and causing damage to the perimeter of the structure). Etc.). In other embodiments, other passages and sealing configurations are possible (eg, passages are provided through the inner portion of the lid).

During etching of the sacrificial material (eg copper) it may be sheathed or inverted or in other directions with the structure. Once all sacrificial material has been etched, the cover can move freely, the structure and skin can be placed dry and upright, thus lowering the cover to the receiving position on top of the thin plated solder layer as shown in FIG. 17B. can do. The package is then heated to form a welded solder between the lid and sheath to complete the packaging. As shown, both the lid and the sheath may have solder plating around them, thus eliminating the need for wetting of the structure material.

18A-18D show other configurations useful in sealing the envelope. As noted above, etch holes located inside the cover or shell are useful for increasing the etching time, and in some configurations such holes do not need to be constrained to a size that can be sealed by the filling solder. 18A shows sheath 522 having a sealing material 524 located near the opening extending through hole 526. The cover element 528 formed at the lower portion is movably coupled to the shell, and may move high once the etching is complete and preferably seal the structure. The cover element includes an opening 536 extending therethrough and is slightly away from the opening 526. FIG. 18B shows the sheath and lid when positioned to be closed at the point where the seal can be made. FIG. 18C is a top view of the structure of FIG. 18A, wherein the cover element 528 can be seen through the hole 526 extending through the sheath 522. Holes 536 in the lid are indicated by broken lines.

18D illustrates another configuration in which the attachment structure is located around the shell 538 and the shell portion 540 (the edge forming a groove to bite the lid 546) may include an opening 544.

In some other embodiments, the packaging techniques described herein may be implemented without the need to weld seal structures within the envelope.

In some other embodiments, solder may be deposited or formed in such a way that the solder does not need to be flattened to a minimum or even flattened (e.g., selection up to a height lower than the next leveling level). By vapor deposition or deposition within voids).

In other embodiments, the cover need not be flat or plain, and the cover (ie, the other half of the skin) may include structural elements that are electrochemically manufactured or otherwise produced.

In other embodiments, the cover may be located on the skin after etching of the sacrificial material and the cover may be covered with epoxy or other material to complete the sealing operation (especially within the bridging region from the cover to the skin). In other embodiments, the cover may be covered in the shell through the tapered surface. In another embodiment, solder, other molten materials, adhesives, or the like may be used to establish a temporary bond or seal between the sheath and the sheath, and may be a coating of epoxy or other material (eg, electrodeposited, sputtered, or other applied metal). ) May be used to improve the integrity of the packaging.

The patent applications and patents disclosed below are hereby incorporated by reference in their entirety. The subject matter of each patent application or patent is included in an understanding table to assist in finding a particular type of disclosure. The incorporation of this subject matter is not intended to be limited to these specifically indicated subject matters, but instead is to include all the subject matter shown in these applications. The disclosure disclosed in these included applications may be combined with the disclosure of the present application in various ways. For example, an improved method of manufacturing a structure may be derived from a combination of the disclosures, an improved structure may be obtained, and an improved apparatus may be derived.

US Patent Application No. 09 / 488,142, filed Jan. 20, 2000, entitled "An Apparatus for Electrochemical Fabrication Comprising a Conformable Mask," is a divisional application of US Pat. No. 6,027,630, described above. This application describes the principles of conformal contact mask plating and electrochemical fabrication, including various methods and apparatus for constructing a conformal contact mask with various methods and apparatus for implementing EFAB.

US patent application Ser. No. 60 / 415,374, filed Oct. 1, 2002, entitled " Monolithic Structures Including Alignment and / or Retention Fixtures for Accepting Components, " generally relates to permanent or temporary alignment. An accommodating structure for accommodating is provided. This structure is preferably formed in a monolithic manner through a plurality of deposition operations (eg, electrodeposition operations). Structures typically include two or more fixtures that control or assist in the placement of the elements relative to each other, such features include: (1) placement guides or fixing or at least partially restricting the position of the elements in one or more orientations or directions; Receiving, (2) a retaining element for holding the element disposed in a predetermined orientation or position, and (3) an adjustment module in which the elements can be fixed and used for fine adjustment of the position and / or orientation of the elements. And retention and / or retention elements.

US Patent No. XX / XXX, XXX (corresponding to MEMGen Docket No. P-US026-A-MG), filed April 21, 2003, entitled "Methods of Reducing Discontinuities Between Layers of Electrochemically Fabricated Structures" DETAILED DESCRIPTION Various embodiments relate to electrochemical fabrication methods and apparatus for generating three-dimensional structures from a plurality of adhesive layers of materials, generally including an operation or structure for reducing discontinuities in transitions between adjacent layers. Some embodiments improve the match between the size of the resulting structure (especially within the transition region associated with the layer with offset edges) and the desired size of the structure derived from the original data representing the three-dimensional structure. Some embodiments utilize a selective and / or total chemical and / or electrochemical deposition process, a selective and / or total chemical and / or electrochemical etching process, or a combination thereof. Some embodiments utilize multi-step deposition or etch operations during monolayer formation.

US patent application No. XX / XXX, XXX (corresponding to MEMGen Docket No. P-US029-A-MG), filed May 7, 2003, entitled “EFAB With Selective Transfer Via Instant Mask” A three-dimensional structure is fabricated electrochemically by depositing a first material onto a pre-deposited material through voids in a patterned mask, wherein the patterned mask is at least temporarily attached to a substrate or a pre-formed material layer and formed into a predetermined pattern. It is formed and patterned on the substrate through a patterned moving tool to allow movement of the precursor masking material of the substrate. In some embodiments, the precursor material is moved to the masking material after moving to the substrate, and in other embodiments the precursor is deformed during or before movement. In some embodiments, layers are formed on top of other layers to form a multilayer structure. In some embodiments, the mask material acts as a constituent material and in other embodiments the mask material is replaced with a different material, which may be conductive or dielectric, for example, in each layer.

MEMGen Docket No. P-US030-A-MG, filed May 7, 2003, entitled `` Three-Dimensional Object Formation Via Selective Inkjet Printing & Electrodeposition '' Corresponds generally to a three-dimensional structure that is electrochemically produced by depositing a first material onto a previously deposited material through voids in the patterned mask, wherein the patterned mask is at least temporarily pre-deposited material. Formed and patterned directly from a material that is adhered to and selectively administered from a computer controlled dispensing device (eg, an inkjet nozzle or array or an extrusion device) In some embodiments, layers are formed on top of another layer In some embodiments, the mask material acts as a constituent material, and in other embodiments, the mask material is exemplified for each layer. It is replaced by a different material which may be conductive or dielectric for example.

10 wol 15 be a, the title of the invention filed in "Methods of and Apparatus for Making High Aspect Ratio Microelectromechanical Structures" U.S. Patent Application No. 10/271 574 discloses a general, the structures (for example, through the electrochemical extrusion (ELEX ^TM) process For example, to provide a technique for forming a HARMS type structure). The preferred embodiment performs the extrusion process through deposition through an anodeless mating contact mask that is initially pressed against the substrate and then gradually separated off as the deposit thickens. The deposition pattern may change as the deposition progresses by including more complex relative motion between the mask and the substrate element. Such complex motion may include translational motion with rotating elements or elements that are not parallel to the separating axis. More complex structures may be formed by combining the ELEX ^™ process with selective deposition, front deposition, planarization, etching, and the multilayer operation of EFAB ^™ .

US patent application Ser. No. 60 / 435,324, filed Dec. 20, 2002, entitled "EFAB Methods and Apparatus Including Spray Metal or Powder Coating Processes," generally describes a combined electrochemical manufacturing process and a thermal spraying process ( DETAILED DESCRIPTION Various embodiments of the invention are directed to techniques for forming structures through a thermal spraying process. In the first set of embodiments, selective deposition occurs through a thermal contact and a conformal contact masking process used in the front surface deposition process to fill the voids left by the selective deposition process. In a second set of embodiments, selective deposition through mating contact masking is used to deposit the first metal in a pattern similar to the net pattern occupied by the sprayed metal. In these other embodiments, the second material is front deposited to fill the voids left in the first pattern, the two deposits are planarized to a common level, which may be somewhat larger than the desired level thickness, and the first material is removed (eg, The third material is sprayed into the voids left by the etching operation. The resulting deposits in both the first and second embodiment sets are planarized to the desired layer thickness in preparation for adding additional layers to form a three-dimensional structure from the plurality of attached layers. In other embodiments, additional materials may be used and other processes may be used.

US patent application Ser. No. 60 / 429,483, filed Nov. 26, 2002, entitled " Multi-cell Masks and Methods and Apparatus for Using Such Masks to Form Three-Dimensional Structures, " The present invention relates to a multilayer structure produced electrochemically through the deposition of the above materials. Selection of deposits is obtained through a multi-cell controllable mask. On the other hand, net selective deposition is obtained through frontal deposition and selective removal of material through a multi-cell mask. Each cell of the mask may include an electrode that includes a depositable material or an electrode capable of receiving the etched material from the substrate. Alternatively, each cell includes a passageway that includes electrodes or other control elements that can be used to allow or inhibit ionic flow between the substrate and the external electrode and selectively allow or inhibit ion flow to inhibit severe deposition or etching. You may.

US patent application Ser. No. 60 / 429,484, filed Nov. 26, 2002, entitled " Non-Conformable Masks and Methods and Apparatus for Forming Three-Dimensional Structures, " For example, electrochemical manufacturing used to form devices). Masks independent of the substrate are generally used to achieve selective patterning. These masks may allow the material to be selectively deposited onto the substrate or may be capable of selective etching of the substrate, where the resulting voids are filled with the selected material and then planarized to actually result in selective deposition of the selected material. The mask may be used in contact mode or proximity mode. In contact mode the mask and substrate are physically paired to form substantially independent process pockets. In proximity mode, the mask and substrate are positioned close enough to form a moderately independent pocket. In some embodiments, the mask may have a mating contact surface (ie, a sufficiently deformable surface that substantially conforms to the surface of the substrate to form a seal therewith), or may have a semi-rigid or even rigid surface. . Post deposition etching operations may be performed to provide flash deposits (thin unnecessary deposits).

US Patent No. 10 / 309,521, filed Dec. 3, 2002, entitled “Miniature RF and Microwave Components and Methods for Fabricating Such Components,” is generally monolithic, or a plurality of electrodeposition operations and / or It relates to RF and microwave radiation orientation or control elements formed from a plurality of layers of deposited materials, or which may include switches, inductors, antennas, transmission lines, filters, and / or other active or passive elements. The devices may include non-radiation-entry and non-radiation-exit channels useful for separating sacrificial material from the structure material. Preferred formation processes include electrochemical fabrication techniques (e.g., including selective deposition, bulk deposition, etching operations, and planarization operations) and post-deposition processes (e.g., selective etching operations and / or Refill).

US Patent Application No. XX / XXX, XXX, filed May 7, 2003, entitled "Method for Fabricating Three-Dimensional Structures Including Surface Treatment of a First Material in Preparation for Deposition of a Second Material" Docket No. P-US049-A-MG) generally relates to a method of manufacturing a three-dimensional structure from a plurality of adhesive layers of at least a first and a second material, wherein the first material is a conductive material, Each of the layers includes treating the surface of the first material prior to the deposition of the second material. Treatment of the surface of the first material may (1) reduce the susceptibility of the deposition of the second material onto the surface of the first material or (2) the second deposited on the surface of the treated first material Easy or easy removal of material. In some embodiments, treatment of the first surface includes forming a dielectric coating on the surface, and deposition of the second material is generated by an electrodeposition process (eg, electroplating or electrophoretic process).

US patent application Ser. No. 10 / 387,958, filed Mar. 13, 2003, entitled "Electrochemical Fabrication Method and Apparatus for Producing Three-Dimensional Structures Having Improved Surface Finish", generally refers to a plurality of layers of deposited material. An electrochemical manufacturing process for creating a three-dimensional structure (eg, device or device), wherein the formation of at least some of the layers is produced by removing material or adjusting selected surfaces of the deposited material. . In some embodiments, the removal or adjustment operation varies between layers or between different parts of the layer, thus different surface qualities are obtained. In other embodiments, variable surface quality may be obtained depending on the specific interaction between the removal or adjustment operations and the different materials by those operations instead of changing the removal or adjustment operations.

MEMGen Docket No. P-US059-A, filed May 7, 2003, entitled " Conformable Contact Masking Methods and Apparatus Utilizing In Situ Cathodic Activation of a Substrate. &Quot; -Corresponding to -SC generally relates to electroplating processes (e.g., conformal contact mask plating and electrochemical fabrication processes) that include in situ activation of the surface to be deposited. The at least one material to be deposited has an effective deposition voltage that is higher than the voltage of the open circuit, and the deposition control parameter can be set to a value at which the voltage can be controlled to a value between the effective deposition voltage and the open circuit voltage and thus significant Deposition does not occur but surface activation of at least a portion of the substrate may occur. After forming an electrical contact between the substrate and the anode comprising at least one material, the surface is energized by applying a voltage or current without causing significant deposition, and then causing the deposition to occur without breaking the electrical contact. .

US Patent Application No. XX / XXX, XXX (corresponding to MEMGen Docket No. P-US060-A-SC), filed May 7, 2003, entitled "Electrochemical Fabrication Methods With Enhanced Post Deposition Processing" Generally relates to an electrochemical manufacturing process for creating a three-dimensional structure from a plurality of adhesive layers, wherein each layer is etched from the structure material after formation of at least one structure material (eg nickel) and all layers are completed. At least one sacrificial material (eg, copper). Copper etchant containing chlorite (eg Enthone C-38) is combined with corrosion inhibitors (eg sodium nitrite) to prevent pitting of the structure material during removal of the sacrificial materials. A simple process for drying an etched structure without the dry process of fixing the surfaces together is to immerse the structure in water after etching and then to alcohol, and then place it in a kiln to dry the structure.

US Patent Application No. XX / XXX, XXX filed May 7, 2003 entitled "Method of and Apparatus for Forming Three-Dimensional Structures Integral With Semiconductor Based Circuitry" (MEMGen Docket No. P-US061-). (Corresponding to A-MG) can generally form a three-dimensional multilayer structure using a semiconductor-based circuit as a substrate. The electrical functional portion of the structure is formed of a structure material (eg nickel) that is attached to the contact pads of the circuit. Aluminum contact pads and silicon structures are protected from copper diffusion damage by application of a suitable barrier layer. In some embodiments, nickel is applied to the aluminum contact pads through solder bump forming techniques using electroless nickel plating. In another embodiment, an optional electroless copper plating or direct metallization is used to plate the sacrificial material directly on the electrical passivation layer. In yet another embodiment, the structure material deposition location is shielded, then the sacrificial material is deposited, the shielding is removed, and then the structure material is deposited.

MEMGen Docket No. P-US064-A-MG, filed May 7, 2003, entitled " Methods of and Apparatus for Molding Structures Using Sacrificial Metal Patterns " Corresponding) generally relates to a cast structure and a method and apparatus for producing the cast structure. At least a portion of the surface features for the mold are formed from a multi-layer electrochemically fabricated structure (eg, produced by an EFAB ^™ forming process) and typically include features having a resolution within the range of 1-100 μm. If necessary, the layer structure is combined with other mold elements and the molding material is injected into the mold and cured. The layer structure is removed (eg by etching) along with other template elements to produce a shaped article. In some embodiments, part of the layer structure remains in the molded article, and in other embodiments additional molding material is added after part or complete removal of the layer structure.

MEMGen Docket No. P-, filed May 7, 2003, entitled `` Electrochemically Fabricated Structures Having Dielectric or Active Bases and Methods of and Apparatus for Producing Such Structures '' (Corresponding to US065-A-MG) is generally electrochemically produced on a temporary (eg conductive) substrate and then bonded to a permanent (eg dielectric, patterned multi-material or other functional) substrate. And a multilayer structure that is separated from the temporary substrate. In some embodiments, the structure is formed from the top layer to the bottom layer, such that the bottom layer of the structure is adhered to the permanent substrate, and in other embodiments the structure is formed from the bottom layer to the top layer and thus a dual substrate exchange occurs. The permanent substrate may be a solid that is bonded to the layer structure (eg, by an adhesive) or starts as a flowable material that solidifies around or around a portion of the structure where bonding occurs during solidification. The multilayer structure may be released from the sacrificial material prior to attaching the permanent substrate or after the attachment.

US Patent Application No. XX / XXX, XXX (corresponding to MEMGen Docket No. P-US067-A-MG), filed May 7, 2003, entitled " Multistep Release Method for Electrochemically Fabricated Structures " And formed of at least one structural material (eg, nickel), which may be attached to the substrate, and at least one sacrificial material (eg, copper) surrounding the desired structure. The present invention relates to a multilayer structure which is electrochemically produced from the multilayer structure. After formation of the structure, the sacrificial material is removed by a multi-step etch operation. In some embodiments, the sacrificial material to be removed may be located in a passageway or the like on a substrate or in an add-on component. The multi-step etching operation may be separated by an intermediate post-treatment activity, or may be separated by a cleaning operation or a barrier material removal operation. The barrier may be fixed in place by contact with the structure material or by contact with the substrate, or may be fixed alone in place by the sacrificial material, and thus may move freely after all retained sacrificial material has been etched. have.

US Patent Application No. XX / XXX, XXX, filed May 7, 2003, entitled "Methods of and Apparatus for Electrochemically Fabricating Structures Via Interlaced Layers or Via Selective Etching and Filling of Voids" (MEMGen Docket No. P-US068-A-MG) generally deposits the first material, selectively etches the first material (e.g., through a mask), and deposits the second material to deposit the second material It is directed to a multi-layered structure that is electrochemically produced by filling a, then limiting the layer produced by planarizing the deposit, and then adding additional layers to the previously formed layer. The first and second depositions may be of blanket or selective type. Repetition of the forming process for successive layer formation may be repeated with or without a variable (e.g., the variable includes the number or presence of patterns, deposition, etching, and / or planarization operations or parameters, operations associated therewith). Order or deposited material). Another embodiment utilizes the interweaving of the deposited material with respect to some layers with the deposited material with respect to other layers to form a multilayer structure.

Various other embodiments of the present invention exist. Some of these embodiments may be based on a combination of the disclosure herein and the disclosure incorporated by reference. Some embodiments may not use any frontside deposition and / or planarization processes. Some embodiments may include selective deposition of a plurality of different materials on a single layer or on multiple layers. Some implementations may use a front deposition process rather than an electrodeposition process. Some embodiments may use an optional deposition process that is neither a contact masking process nor an electrodeposition process. Some embodiments may use nickel as the structure material, while other embodiments may use other materials such as gold, silver or other electrodepositable materials that may be separated from copper and / or other sacrificial materials. Some embodiments may use copper as the structure material with or without sacrificial material. In some embodiments, the anode may be different from the contact mask support, and the support may be a porous structure or a structure with other holes. Some embodiments may use multiple matching masks with different patterns to deposit different selective patterns of material on different layers and / or different portions of a single layer. In some embodiments, the depth of deposition is increased by moving the mating contact mask away from the substrate when deposition occurs in such a way that the seal between the mating portion of the CC mask and the substrate moves from the side of the mating material to the inner edge of the mating material. Is improved.

From the disclosure herein, many other embodiments, design changes, and uses of the invention will be apparent to those skilled in the art. It is, therefore, to be understood that the invention is not limited to the specific embodiments, alternatives and uses described above, but instead only by the appended claims.

Claims (12)

In an electrochemical fabrication process, which produces a three-dimensional structure from a plurality of adhered layers, (A) depositing at least a portion of the layer onto the substrate, the substrate may comprise a previously deposited material; and (B) forming a plurality of layers such that each successive layer is formed adjacent to the previously deposited layer and attached to the previously deposited layer, The layers comprise at least three different materials, The layers   (1) a structural element formed of at least one structural material as a desired structural component to be protected,   (2) a protective enclosure formed at least in part from the structural material, at least a portion of the outer shell at least partially surrounding the given structural element, the outer shell being limited by at least one opening therein - Wow,   (3) a sealing material located near said at least one opening,   (4) a sacrificial material at least partially located between the given structural element to be protected and at least a portion of the sheath. Including patterns of material including; After formation of the layers, at least a portion of the sacrificial material located between the given structure element and at least a portion of the sheath is removed, After removal of the sacrificial material, the sealing material temporarily flows to seal the at least one opening, blocking or significantly restricting the passage of material through the at least one sealed opening from the outside of the sheath into the interior of the sheath. Done Electrochemical manufacturing process. The method of claim 1, Removal of the sacrificial material includes etching Electrochemical manufacturing process. The method of claim 1, After sealing off the sacrificial material and prior to sealing, a reducing agent is provided at at least one location in or near the at least one opening to reduce the presence of any oxide at the at least one location. Electrochemical manufacturing process. The method of claim 1, After the sacrificial material is removed and before sealing, a predetermined fill gas is to fill the inner cavity of the shell where the given structural element is at least partially located. Electrochemical manufacturing process. The method of claim 1, After sealing off the sacrificial material and before sealing, the inner cavity of the skin at which the given structural element is at least partially positioned is at least partially emptied. Electrochemical manufacturing process. The method of claim 1, At least one opening and the sealing material are positioned such that the sealing material does not have to flow on any structure material when the sealing material flows to seal the opening. Electrochemical manufacturing process. The method of claim 1, At least one opening is at least partially sealed by the surface tension of the flowable sealing material causing the sealing material to expand and bridge the opening. Electrochemical manufacturing process. The method of claim 1, At least one opening has an inclined wall that provides a cross-sectional dimension that is not fixed to the opening through the skin, the sealing material, or the combination of the sealing material and the skin. Electrochemical manufacturing process. The method of claim 1, The at least one opening has a restriction through which sealing material flows when sealing the opening. Electrochemical manufacturing process. In an electrochemical fabrication process, which produces a three-dimensional structure from a plurality of adhered layers, (A) depositing at least a portion of the layer onto the substrate, the substrate may comprise a previously deposited material; and (B) forming a plurality of layers such that each successive layer is formed adjacent to the previously deposited layer and attached to the previously deposited layer, The layers comprise at least two different materials, The layers   (1) a structural element formed of at least one structural material as a desired structural component to be protected,   (2) a protective enclosure formed at least in part from the structural material, at least a portion of the outer shell at least partially surrounding the given structural element, the outer shell being limited by at least one opening therein - Wow,   (3) a sacrificial material at least partially located between the given structural element to be protected and at least a portion of the sheath. Including patterns of material including; After formation of the layers, at least a portion of the sacrificial material located between the given structure element and at least a portion of the sheath is removed, After removal of the sacrificial material, a seal is formed between the protective sheath and the sealing structure, wherein at least one protective sheath or sealing structure is sealed from the exterior of the sheath to the interior of the sheath. A sealing material used to establish a seal of the at least one opening to block or significantly limit the passage of material through the opening. Electrochemical manufacturing process. In an electrochemical fabrication process, which produces a three-dimensional structure from a plurality of adhered layers, (A) depositing at least a portion of the layer onto the substrate, the substrate may comprise a previously deposited material; and (B) forming a plurality of layers such that each successive layer is formed adjacent to the previously deposited layer and attached to the previously deposited layer, The layers comprise at least two different materials, The layers   (1) a structural element formed of at least one structural material as a desired structural component to be protected,   (2) a protective enclosure formed at least in part from the structural material, at least a portion of the outer shell at least partially surrounding the given structural element, the outer shell being limited by at least one opening therein - Wow,   (3) at least one blocking structure located along a line of sight including the at least one opening but away from the protective sheath;   (4) a sacrificial material at least partially located between the given structural element to be protected and at least a portion of the sheath. Including patterns of material including; After formation of the layers, at least a portion of the sacrificial material located between the given structure element and at least a portion of the sheath is removed, After removal of the sacrificial material, the sealing material is deposited to contact the barrier material that inhibits the sealing profile from entering the sheath in the bulk, thereby sealing the at least one opening by continued deposition of the sealing material. Blocking or significantly restricting the passage of material through the at least one sealed opening from the outside of the sheath into the interior of the sheath. Electrochemical manufacturing process. In an electrochemical fabrication process, which produces a three-dimensional structure from a plurality of adhered layers, (A) depositing at least a portion of the layer onto the substrate, the substrate may comprise a previously deposited material; and (B) forming a plurality of layers such that each successive layer is formed adjacent to the previously deposited layer and attached to the previously deposited layer, The layers comprise at least two different materials, The layers   (1) a structural element formed of at least one structural material as a desired structural component to be protected,   (2) a protective enclosure formed at least in part from the structural material, at least a portion of the outer shell at least partially surrounding the given structural element, the outer shell being limited by at least one opening therein - Wow,   (3) a sacrificial material at least partially located between the given structural element to be protected and at least a portion of the sheath. Comprising patterns of material comprising Electrochemical manufacturing process.