KR20050003290A - 반도체 소자의 제조 방법 - Google Patents
반도체 소자의 제조 방법 Download PDFInfo
- Publication number
- KR20050003290A KR20050003290A KR1020030044010A KR20030044010A KR20050003290A KR 20050003290 A KR20050003290 A KR 20050003290A KR 1020030044010 A KR1020030044010 A KR 1020030044010A KR 20030044010 A KR20030044010 A KR 20030044010A KR 20050003290 A KR20050003290 A KR 20050003290A
- Authority
- KR
- South Korea
- Prior art keywords
- interlayer insulating
- gate
- channel
- insulating film
- region
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000011229 interlayer Substances 0.000 claims abstract description 29
- 239000007943 implant Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 13
- 150000004767 nitrides Chemical class 0.000 claims abstract description 13
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 238000001039 wet etching Methods 0.000 claims abstract description 4
- 239000007772 electrode material Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000010405 reoxidation reaction Methods 0.000 claims description 3
- 230000035876 healing Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 8
- 238000003860 storage Methods 0.000 abstract description 8
- 230000014759 maintenance of location Effects 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0128—Manufacturing their channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0135—Manufacturing their gate conductors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (2)
- 소정의 하부 구조가 형성된 반도체 기판 상에 게이트 산화막과 게이트 전극 물질 및 층간 절연막을 순차로 형성하는 단계와,상기 층간 절연막을 식각하여 채널이 형성될 부분을 오픈하는 단계와.상기 채널이 형성될 영역이 오픈된 결과물에 임플란트 공정을 진행하여 실리콘 기판에 채널 영역을 형성하는 단계와,상기 층간 절연막이 식각된 부분에 질화막을 매립한 후 평탄화하는 단계와,상기 층간 절연막을 습식 식각 공정으로 제거하는 단계와,상기 질화막을 마스크로 이용한 식각 공정을 진행하여 게이트를 패터닝하는 단계를포함하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 1항에 있어서, 상기 게이트 패터닝 공정후 임플란트 공정과 게이트 식각 공정에 의한 데미지를 치유하기 위한 재산화 공정을 더 진행하는 것을 특징으로 하는 반도체 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0044010A KR100480236B1 (ko) | 2003-06-30 | 2003-06-30 | 반도체 소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0044010A KR100480236B1 (ko) | 2003-06-30 | 2003-06-30 | 반도체 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050003290A true KR20050003290A (ko) | 2005-01-10 |
KR100480236B1 KR100480236B1 (ko) | 2005-04-07 |
Family
ID=37218509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-0044010A KR100480236B1 (ko) | 2003-06-30 | 2003-06-30 | 반도체 소자의 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100480236B1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100894102B1 (ko) * | 2007-10-29 | 2009-04-20 | 주식회사 하이닉스반도체 | 고집적화된 반도체 메모리소자의 제조방법 |
KR100905181B1 (ko) * | 2007-10-31 | 2009-06-29 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
US12179469B2 (en) | 2006-02-21 | 2024-12-31 | Celgard, Llc | Biaxially oriented microporous membrane |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101116310B1 (ko) * | 2008-04-04 | 2012-03-14 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
-
2003
- 2003-06-30 KR KR10-2003-0044010A patent/KR100480236B1/ko not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12179469B2 (en) | 2006-02-21 | 2024-12-31 | Celgard, Llc | Biaxially oriented microporous membrane |
KR100894102B1 (ko) * | 2007-10-29 | 2009-04-20 | 주식회사 하이닉스반도체 | 고집적화된 반도체 메모리소자의 제조방법 |
KR100905181B1 (ko) * | 2007-10-31 | 2009-06-29 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100480236B1 (ko) | 2005-04-07 |
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