KR200292794Y1 - 가요성회로기판 및 이를 이용한 반도체패키지 - Google Patents
가요성회로기판 및 이를 이용한 반도체패키지 Download PDFInfo
- Publication number
- KR200292794Y1 KR200292794Y1 KR2019980025418U KR19980025418U KR200292794Y1 KR 200292794 Y1 KR200292794 Y1 KR 200292794Y1 KR 2019980025418 U KR2019980025418 U KR 2019980025418U KR 19980025418 U KR19980025418 U KR 19980025418U KR 200292794 Y1 KR200292794 Y1 KR 200292794Y1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor chip
- resin film
- flexible circuit
- circuit board
- lands
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 239000011347 resin Substances 0.000 claims abstract description 49
- 229920005989 resin Polymers 0.000 claims abstract description 49
- 239000010408 film Substances 0.000 claims abstract description 44
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 230000001070 adhesive effect Effects 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 229910000679 solder Inorganic materials 0.000 claims description 17
- 238000005538 encapsulation Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 3
- 230000008646 thermal stress Effects 0.000 claims 2
- 238000005336 cracking Methods 0.000 abstract description 5
- 230000003139 buffering effect Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000008393 encapsulating agent Substances 0.000 description 4
- 230000004927 fusion Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010033799 Paralysis Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (2)
- 반도체칩 접착영역을 갖는 평판상의 절연성 수지필름과, 상기 반도체칩 접착영역의 내주연 인근 및 외주연 외측의 상기 수지필름상에 도전체 박막으로 형성되는 본드핑거, 연결부 및 랜드로 형성되며, 상기 랜드는 상기 수지필름의 저면 외부로 노출되어 있는 가요성회로기판에 있어서,제조 공정중 또는 반도체칩(22) 작동중 발생되는 열응력을 완화시킬 수 있도록 수지필름(11)상에 형성된 반도체칩 접착영역(12) 전체에 저면이 상기 수지필름 (11) 외부로 노출되어 있으며 연결부(14)에 의해 서로 물리적 및 열적으로 연결되어 있는 다수의 완충용 랜드(16)가 형성되어 있는 것을 특징으로 하는 가요성회로기판.
- 반도체칩 접착영역을 갖는 평판상의 절연성 수지필름과, 상기 반도체칩 접착영역의 내주연 인근 및 외주연 외측의 상기 수지필름상에 도전체 박막으로 형성되는 본드핑거, 연결부 및, 상기 수지필름의 저면으로 노출되어 있는 랜드로 구성되는 가요성회로기판과, 상기 반도체칩 접착영역상에 접착되는 반도체칩과, 상기 반도체칩과 상기 본드핑거를 전기적으로 연결하는 도전성와이어와, 상기 반도체칩 및 도전성와이어를 보호하는 수지봉지부와, 외부입출력 단자로서 상기 랜드에 융착되는 솔더볼로 구성되는 패키지에 있어서,제조 공정중 또는 반도체칩(22) 작동중 발생되는 열응력을 완화시킬 수 있도록 수지필름(11)상에 형성된 반도체칩 접착영역(12) 전체에 저면이 상기 수지필름 (11) 외부로 노출되어 있으며 연결부(14)에 의해 서로 물리적 및 열적으로 연결되어 있는 다수의 완충용 랜드(16)가 형성되어 있는 것을 특징으로 하는 반도체패키지.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019980025418U KR200292794Y1 (ko) | 1998-12-17 | 1998-12-17 | 가요성회로기판 및 이를 이용한 반도체패키지 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019980025418U KR200292794Y1 (ko) | 1998-12-17 | 1998-12-17 | 가요성회로기판 및 이를 이용한 반도체패키지 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20000012440U KR20000012440U (ko) | 2000-07-05 |
| KR200292794Y1 true KR200292794Y1 (ko) | 2003-04-07 |
Family
ID=49328970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019980025418U KR200292794Y1 (ko) | 1998-12-17 | 1998-12-17 | 가요성회로기판 및 이를 이용한 반도체패키지 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200292794Y1 (ko) |
-
1998
- 1998-12-17 KR KR2019980025418U patent/KR200292794Y1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000012440U (ko) | 2000-07-05 |
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