KR200163644Y1 - Chemical vapor deposition device - Google Patents
Chemical vapor deposition device Download PDFInfo
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- KR200163644Y1 KR200163644Y1 KR2019970000842U KR19970000842U KR200163644Y1 KR 200163644 Y1 KR200163644 Y1 KR 200163644Y1 KR 2019970000842 U KR2019970000842 U KR 2019970000842U KR 19970000842 U KR19970000842 U KR 19970000842U KR 200163644 Y1 KR200163644 Y1 KR 200163644Y1
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- chemical vapor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 고안은 내부에 다 수의 웨이퍼가 적재된 웨이퍼보오트가 있고, 일측 하단에는 공정가스공급부가, 타측 하단에는 공정가스배기부가 설치된 외부튜브몸체와, 웨이퍼보오트와 외부튜브몸체 사이에 설치되어, 상, 하부가 개구된 내부튜브를 구비하여서 공정가스가 공정가스공급부를 거쳐 내부튜브 하부로 공급되어 상부로 통하면서 웨이퍼 상에 막을 증착시키고, 외부튜브 몸체의 공정가스 배기부로 흘러나가는 화학기상증착장치에 있어서, 내부튜브를 하부쪽에서 상부쪽으로 갈수록 단면적이 작아지도록 하여 내부튜브의 상, 하부에 공정가스가 균일하게 분포되도록 하여 웨이퍼보오트에 장착된 다수의 웨이퍼 상에 균일한 두께의 막을 증착시키는 화학기상증착장치에 관한 것이다.The present invention has a wafer boat in which a plurality of wafers are loaded therein, and an outer tube body having a process gas supply part at one lower end and a process gas exhaust part at a lower end of the other side is installed between the wafer boat and the outer tube body. , The upper and lower openings have an inner tube so that the process gas is supplied to the lower portion of the inner tube through the process gas supply unit, and the film is deposited on the wafer while passing through the upper portion, and the chemical vapor deposition flows out to the process gas exhaust portion of the outer tube body. In the apparatus, the inner tube is made smaller from the lower side to the upper side so that the process gas is uniformly distributed on the upper and lower portions of the inner tube to deposit a film having a uniform thickness on a plurality of wafers mounted on the wafer boat. It relates to a chemical vapor deposition apparatus.
Description
제1도는 종래의 화학기상증착장치를 설명하기 위한 도면으로, 제1a도는 종래의 화학기상증착장치의 단면도이고, 제1b도는 제1a도의 C-C'선의 평면도이다.1 is a view for explaining a conventional chemical vapor deposition apparatus, Figure 1a is a cross-sectional view of the conventional chemical vapor deposition apparatus, Figure 1b is a plan view of the line C-C 'of FIG.
종래의 화학기상증착장치는 제1a도, 제1b도와 같이, 내부에는 다 수의 웨이퍼가 적재된 웨이퍼보오트(waferboat)(12)가 있고, 일측 하단에는 공정가스공급부(13)가, 타측 하단에는 공정가스배기부(14)가 설치된 외부튜브몸체(10)와, 웨이퍼보오트(12)와 외부튜브몸체(10) 사이에 설치되어, 상, 하부가 개구된 내부튜브(11)와, 외부튜브 가장자리에 설치된 가열부(15)로 구성된다.Conventional chemical vapor deposition apparatus 1a, 1b, as shown in Figure 1, there is a wafer boat (waferboat) 12 is loaded with a plurality of wafers inside, the lower end of the process gas supply unit 13, the other lower end The outer tube body 10 is provided with a process gas exhaust 14, between the wafer boat 12 and the outer tube body 10, the inner tube 11, the upper and lower openings, and the outside It consists of a heating part 15 installed at the tube edge.
이때, 외부튜브 하단은 개방되도록 형성되어, 덮개(10-1)로 개폐가능하다.At this time, the lower end of the outer tube is formed to be opened and closed by the cover (10-1).
이와같은 구성을 갖는 종래의 화학기상증착장치는 공정가스가 내부튜브 하부로 공급되어 상부로 통하면서 웨이퍼 상에 막을 증착시킨다.The conventional chemical vapor deposition apparatus having such a configuration deposits a film on a wafer while a process gas is supplied to the lower portion of the inner tube and passes through the upper portion.
종래의 화학기상증착장치 내에서 웨이퍼보오트 내에 적재된 각각의 웨이퍼 상에 증착공정이 진행되는 과정을 살펴보면 다음과 같다.Looking at the process of the deposition process on each wafer loaded in the wafer boat in the conventional chemical vapor deposition apparatus as follows.
우선, 막증착공정이 진행될 외부튜브(10) 하단에 설치된 덮개(10-1)를 오픈시키어 다 수개의 웨이퍼가 적재된 웨이퍼보오트(12)가 외부튜브몸체(10) 내로 인입되며, 외부튜브몸체(10) 가장자리에 설치된 가열부(15)인 가열코일에 전원이 온되어 일정한 공정온도까지 상숭됨에 따라 외부튜브몸체(10)가 가열된다.First, the cover 10-1 installed at the bottom of the outer tube 10 where the film deposition process is to be opened opens the wafer boat 12 in which a plurality of wafers are loaded into the outer tube body 10, and the outer tube. The outer tube body 10 is heated as the power is turned on and heated to a constant process temperature, which is the heating coil 15 provided at the edge of the body 10.
그리고 가열된 외부튜브몸체(10)의 열이 내부튜브(11)로 전달되며, 외부튜브 일측 하단에 형성된 공정가스공급부(13)를 통하여 공정가스가 내부로 공급되는 데, 이때 공정가스는 내부튜브(11) 하부에 머물면서 웨이퍼보오트(12) 내에 적재된 웨이퍼와 웨이퍼 사이사이로 흐르면서 증착된다.And the heat of the heated outer tube body 10 is transferred to the inner tube 11, the process gas is supplied to the inside through the process gas supply unit 13 formed on one side of the outer tube, the process gas is the inner tube (11) It is deposited while flowing between the wafer and the wafer loaded in the wafer boat 12 while remaining at the bottom.
이어서 내부튜브로 공급되는 공정가스는 웨이퍼 상에 소정의 막을 증착하고 난 후, 제1b도와 같이, 미반응가스 및 반응부산물은 내부튜브(11)의 상방향(up zone)으로 계속해서 상승하여 외부튜브(10)로 퍼져 공정가스배기구(14)를 통하여 장치 밖으로 배기된다.Subsequently, the process gas supplied to the inner tube deposits a predetermined film on the wafer, and as shown in FIG. 1B, the unreacted gas and the reaction by-product continue to rise in the up zone of the inner tube 11 to the outside. It spreads through the tube 10 and is exhausted out of the device through the process gas exhaust 14.
이때, 내부튜브는 상부와 하부의 단면적이 일정한 원통형으로, 내부로 공급되는 공정가스의 분포도는 튜브의 하부쪽일수록 높다.At this time, the inner tube is a cylindrical cross-section of the top and bottom is constant, the distribution of the process gas supplied to the inside the higher the lower side of the tube.
즉, 내부튜브 상부쪽으로 갈수록 가스량이 적게된다.That is, the amount of gas decreases toward the upper portion of the inner tube.
따라서 공정가스가 내부튜브 하단에서 공급되어지는 종래의 화학기상증착장치에서는 웨이퍼보오트 상단에 존재하는 공정가스의 분포도가 웨이퍼보오트 하단에 존재하는 공정가스의 분포도보다 비교적 낮기 때문에 웨이퍼보오트 상단, 하단의 위치에 따른 웨이퍼 간에 증착되는 막의 두께가 상이하게 된다.Therefore, in the conventional chemical vapor deposition apparatus in which the process gas is supplied from the lower end of the inner tube, the distribution of the process gas present at the top of the wafer boat is relatively lower than that of the process gas present at the bottom of the wafer boat. The thickness of the film deposited between the wafers is different depending on the position of the bottom.
이를 보상하기 위하여 내부튜브의 상부쪽 온도를 높일 경우 증착되는 막이 각각 다른 온도에서 형성되기 때문에 막특성이 달라진다.In order to compensate for this, when the temperature of the upper side of the inner tube is increased, the film properties are different because the deposited films are formed at different temperatures.
따라서, 종래의 화학기상증착장치에서는 내부튜브 내의 웨이퍼 위치에 따라(상부쪽과 하부쪽 등의 위치에 따라) 웨이퍼 상에 증착되는 막의 균일도가 달라진다.Therefore, in the conventional chemical vapor deposition apparatus, the uniformity of the film deposited on the wafer varies depending on the position of the wafer in the inner tube (the position of the upper side, the lower side, etc.).
본 고안의 화학기상증착장치는 내부튜브 내에 공급되는 공정가스가 상부, 하부에 관계없이 분포도를 일정하게 유지하도록 하여 웨이퍼보오트에 적재된 각각의 웨이퍼 상에 균일한 막 증착을 제공한다.The chemical vapor deposition apparatus of the present invention maintains a uniform distribution of the process gas supplied in the inner tube regardless of the top and bottom, thereby providing uniform film deposition on each wafer loaded on the wafer boat.
본 고안은 내부에 다 수의 웨이퍼가 적재된 웨이퍼보오트가 있고, 일측 하단에는 공정가스공급부가, 타측 하단에는 공정가스배기부가 설치된 외부튜브몸체와, 웨이퍼보오트와 외부튜브몸체 사이에 설치되어, 상, 하부가 개구된 내부튜브를 구비하여서 공정가스가 공정가스공급부를 거쳐 내부튜브 하부로 공급되어 상부로 통하면서 웨이퍼 상에 막을 증착시키고, 외부튜브 몸체의 공정가스 배기부로 흘러나가는 화학기상증착장치에 있어서, 내부튜브를 하부쪽에서 상부쪽으로 갈수록 단면적이 작아지도록 하여 내부튜브의 상, 하부에 공정가스가 균일하게 분포되도록 한다.The present invention has a wafer boat in which a plurality of wafers are loaded therein, and an outer tube body having a process gas supply part at one lower end and a process gas exhaust part at a lower end of the other side is installed between the wafer boat and the outer tube body. , The upper and lower openings have an inner tube so that the process gas is supplied to the lower portion of the inner tube through the process gas supply unit, and the film is deposited on the wafer while passing through the upper portion, and the chemical vapor deposition flows out to the process gas exhaust portion of the outer tube body. In the apparatus, the cross-sectional area of the inner tube becomes smaller from the lower side to the upper side so that the process gas is uniformly distributed on the upper and lower portions of the inner tube.
제1도는 종래의 화학기상증착장치를 설명하기 위한 도면으로,1 is a view for explaining a conventional chemical vapor deposition apparatus,
제1a도는 종래의 화학기상증착장치의 단면도이고,1a is a sectional view of a conventional chemical vapor deposition apparatus,
제1b는 제1a도의 C-C'선의 평면도이다.FIG. 1B is a plan view of the line CC ′ in FIG. 1A.
제2도는 본 고안의 화학기상증착장치의 단면도이다.2 is a cross-sectional view of the chemical vapor deposition apparatus of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10, 20 : 외부튜브몸체 10-1, 20-1 : 덮개10, 20: outer tube body 10-1, 20-1: cover
11, 21 : 내부튜브 12, 22 : 웨이퍼보오트11, 21: inner tube 12, 22: wafer boat
13, 33 : 공정가스공급부 14, 24 : 공정가스배기부13, 33: process gas supply unit 14, 24: process gas exhaust unit
제2a도는 본 고안의 화학기상증착장치의 단면도로, 첨부된 도면을 참고로 하여 본 고안의 화학기상증착장치를 설명하겠다.Figure 2a is a cross-sectional view of the chemical vapor deposition apparatus of the present invention, with reference to the accompanying drawings will be described the chemical vapor deposition apparatus of the present invention.
본 고안의 화학기상증착장치는 제2a도와 같이, 개방된 하단에는 덮개(20-1)가 설치되고, 내부에는 다 수개의 웨이퍼가 적재된 웨이퍼보오트(22)가 있고, 일측 하단에는 공정가스공급부(23)가, 타측 하단에는 공정가스배기부(24)가 설치된 외부튜브몸체(20)와, 외부튜브몸체(20)와 웨이퍼보오트 사이에 설치되고, 상, 하부가 개구되며, 상부와 하부의 단면적이 상이한 원통형의 내부튜브(21)와, 외부튜브 가장자리에 설치된 가열부(25)로 구성된다.In the chemical vapor deposition apparatus of the present invention, as shown in FIG. 2A, a cover 20-1 is installed at an open lower end, a wafer boat 22 having a plurality of wafers loaded therein, and a process gas at one lower end. The supply unit 23 is installed between the outer tube body 20 provided with the process gas exhaust unit 24 at the lower end of the other side, between the outer tube body 20 and the wafer boat, and has upper and lower openings. It consists of a cylindrical inner tube 21 having a lower cross-sectional area and a heating part 25 provided at the outer tube edge.
이때, 외부튜브 하단은 개방되도록 형성되어, 덮개(20-1)로 개폐가능하다.At this time, the lower end of the outer tube is formed to be opened and closed by the cover 20-1.
그리고 내부튜브(11)는 상, 하단이 개구된 원통형으로, 상부쪽으로 갈수록 단면적이 작게 형성되어서 위치별로 공정가스의 분포도가 일정하도록, 즉 상부쪽의 부피를 줄임으로써 내부튜브 내의 공정가스 흐름이 일정하도록 한다.In addition, the inner tube 11 has a cylindrical shape having an upper and a lower end, and a smaller cross-sectional area is formed toward the upper side so that the distribution of process gas is constant for each position, that is, the process gas flow in the inner tube is reduced by reducing the volume of the upper side. Do it.
이와같은 구성을 갖는 본 고안의 화학기상증착장치 내에서 웨이퍼보오트 내에 적재된 각각의 웨이퍼 상에 증착공정이 진행되는 과정을 살펴보면 다음과 같다.Looking at the process of the deposition process on each wafer loaded in the wafer boat in the chemical vapor deposition apparatus of the present invention having such a configuration as follows.
우선, 막공정이 진행될 외부튜브몸체(20) 하단에 설치된 덮개(20-1)를 오픈시킨 후, 다 수개의 웨이퍼가 적재된 웨이퍼보오트(22)가 내부로 인입되며, 외부튜브몸체(20) 가장자리에 설치된 가열부(25)인 가열코일에 전원이 온(on)되면서 일정한 공정온도까지 상승되면서 외부튜브 내부가 가열된다.First, after opening the cover 20-1 installed at the lower end of the outer tube body 20 to be subjected to the membrane process, the wafer boat 22 having a plurality of wafers loaded therein is introduced into the inner tube body 20. As the power is turned on (on) the heating coil 25 installed at the edge, the temperature rises to a certain process temperature and the inside of the outer tube is heated.
그리고 외부튜브 내가 적정온도에 이르면, 외부튜브의 열이 내부튜브로 전달되면서, 외부튜브 일측 하단에 형성된 공정가스공급부(23)를 통하여 공정가스가 내부튜브(11) 하부로 공급되어 상부로 통하면서 웨이퍼 상에 막증착공정을 진행시킨다.And when the outer tube reaches the proper temperature, the heat of the outer tube is transferred to the inner tube, through the process gas supply unit 23 formed on one side of the outer tube, the process gas is supplied to the lower portion of the inner tube (11) through the top The film deposition process is carried out on the wafer.
이때, 공정가스는 내부튜브(21) 내로 통과되되, 내부튜브의 단면적이 하부쪽에서 상부쪽으로 갈수록 작기 때문에, 내부튜브 상부나 하부에 관계없이 공정가스의 분포도가 일정하다.At this time, the process gas is passed through the inner tube 21, since the cross-sectional area of the inner tube is smaller from the lower side to the upper side, the distribution of the process gas is constant regardless of the upper or lower inner tube.
이이서 내부튜브(11) 내로 공급되어진 공정가스가 웨이퍼보오트(22)에 적재된 각각의 웨이퍼 상에 증착하여 소정의 막을 형성하고 난 후, 반응부산물인 미반응된 공정가스 및 파티클은 내부튜브(21)의 상방향(up zone)으로 계속해서 상숭하여 외부 튜브로 퍼져 공정가스배기구(14)를 통하여 장치 밖으로 배기된다.After the process gas supplied into the inner tube 11 is deposited on each wafer loaded on the wafer boat 22 to form a predetermined film, the unreacted process gas and the particles, which are reaction byproducts, are disposed in the inner tube. It continuously rises in the up zone of 21 and spreads to the outer tube and is exhausted out of the apparatus through the process gas exhaust port 14.
웨이퍼 상에 막증착공정이 진행 시, 공정가스가 튜브 하단으로부터 주입되기 때문에 튜브 내부에 다 수개의 웨이퍼가 적재된 웨이퍼보오트의 상부, 하부 각각의 위치별로 증착되는 막의 두께가 일정하지 않는 종래의 화학기상증착장치의 문제점을 개선하여 본 고안의 화학기상증착장치에서는 공정가스가 확산되는 내부튜브의 폭을 달리하여, 내부튜브 내의 공정가스 분포도를 일정하게 유지시키어 웨이퍼보오트의 상부, 하부에 관계없이 웨이퍼 상에 균일한 막을 증착하도록 한다.When the film deposition process is performed on the wafer, since the process gas is injected from the bottom of the tube, the thickness of the film deposited for each position of the upper and lower portions of the wafer boat in which a plurality of wafers are loaded inside the tube is not constant. The chemical vapor deposition apparatus of the present invention improves the problem of the chemical vapor deposition apparatus by varying the width of the inner tube in which the process gas is diffused, and maintains the distribution of the process gas in the inner tube in a constant relationship with the top and bottom of the wafer boat. To deposit a uniform film on the wafer without.
즉, 본 고안의 화학기상증착장치에서는 내부튜브를 변형시키어 상부와 하부에 관계없이 공정가스의 분포를 일정하게 유지시킴에 따라, 웨이퍼보오트 내의 웨이퍼와 웨이퍼 사이사이로 공정가스가 골고루 공급되어 웨이퍼 상에 균일한 막을 증착할 수 있다.That is, in the chemical vapor deposition apparatus of the present invention, as the inner tube is deformed to maintain the distribution of the process gas regardless of the upper and lower portions, the process gas is uniformly supplied between the wafer and the wafer in the wafer boat, and thus the upper surface of the wafer is changed. A uniform film can be deposited on the.
본 고안은 반도체웨이퍼 제조를 위한 화학기상증착(CVD : Chemical Vapor Deposition)장치에 관한 것으로, 특히 반도체 디바이스 제조공정에서 웨이퍼 상에 증착되는 막을 균일하게 도포시키기에 적당한 화학기상증착장치에 관한 것이다.The present invention relates to a chemical vapor deposition (CVD) apparatus for manufacturing a semiconductor wafer, and more particularly, to a chemical vapor deposition apparatus suitable for uniformly applying a film deposited on a wafer in a semiconductor device manufacturing process.
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| KR2019970000842U KR200163644Y1 (en) | 1997-01-22 | 1997-01-22 | Chemical vapor deposition device |
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