KR20010043419A - 인코히어런트 광을 이용한 광학 마스터 제작법 - Google Patents
인코히어런트 광을 이용한 광학 마스터 제작법 Download PDFInfo
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- KR20010043419A KR20010043419A KR1020007012454A KR20007012454A KR20010043419A KR 20010043419 A KR20010043419 A KR 20010043419A KR 1020007012454 A KR1020007012454 A KR 1020007012454A KR 20007012454 A KR20007012454 A KR 20007012454A KR 20010043419 A KR20010043419 A KR 20010043419A
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- Prior art keywords
- photoresist
- film
- light source
- photosensitive medium
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 230000003287 optical effect Effects 0.000 title claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 230000005855 radiation Effects 0.000 claims description 13
- 230000001427 coherent effect Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical group [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- 238000000465 moulding Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 13
- 239000004593 Epoxy Substances 0.000 description 9
- 238000007540 photo-reduction reaction Methods 0.000 description 9
- 238000007493 shaping process Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-OIOBTWANSA-N chromium-49 Chemical compound [49Cr] VYZAMTAEIAYCRO-OIOBTWANSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000088 plastic resin Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 241001479434 Agfa Species 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 238000011272 standard treatment Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/04—Processes or apparatus for producing holograms
- G03H1/06—Processes or apparatus for producing holograms using incoherent light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/32—Holograms used as optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
- G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
Description
Claims (29)
- 마스터 광학 디퓨저를 제작하는 방법으로서, 상기 방법은:스페클 패턴으로 변조되는 레이저 광에 포토그래픽 필름을 노출시키고,포토그래픽 필름을 현상하며,감광 매질에 인접하게 포토그래픽 필름을 위치시키고, 그리고포토그래픽 필름을 통해 인코히어런트 광에 감광 매질을 노출시키는, 이상의 단계를 포함하는 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 감광 매질이 포토레지스트인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 코닥 2000 8E56 밀리마스크 중 하나인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 레이저 광은 크립톤 레이저인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 인코히어런트 광이 자외선 아크 램프인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 스페클 패턴은 준-임의 순서를 바탕으로 하는 것을 특징으로 하는 방법.
- 마스터를 제작하는 방법으로서, 상기 방법은:형태의 준-임의 패턴을 생성하고,마스크에 형태의 준임의 패턴을 기록하며,마스크로 감광 매질을 덮고, 그리고인코히어런트 광원에 마스킨된 감광 매질을 노출시키는 이상의 과정을 포함하고,이에 의해 형태의 임의 패턴이 감광 매질로 전달되는 것을 특징으로 하는 방법.
- 마스터를 제작하는 방법으로서, 상기 방법은:이미지세터의 프린트 드럼에 필름을 위치시키고,준-임의 진폭 마스크를 형성하기 위해 이미지세터 내부에서 방사 광원으로 필름을 노출시키며,필름을 제거하고,네가티브 생성을 위해 필름을 현상하며,포토레지스트에 인접하게 네가티브를 위치시키고,필름을 통해 인코히어런트 광에 포토레지스트를 노출시키며, 그리고포토레지스트를 현상시키는, 이상의 단계를 포함하는 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 상기 방법은 네가티브와 포토레지스트를 인코히어런트 광원에 노출시키면서, 인코히어런트 광원을 이동시키는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 고해상도 리듀서에서 네가티브를 축소하는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 축소된 네가티브가 스테퍼 마스크로 사용되는 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 인코히어런트 광원이 확산형인 것을 특징으로 하는 방법.
- 마스터를 제작하는 방법으로서, 상기 방법은:이미지세터의 드럼에 포토레지스트를 위치시키고,이미지세터 내부의 방사 광원으로 포토레지스트를 노출시키며,포토레지스트의 비노출부를 에칭하여 없애고,에칭된 포토레지스트에 의해 노출된 드럼을 에칭하며, 그리고잔여 포토레지스트를 씻어내는, 이상의 단계를 포함하는 것을 특징으로 하는 방법.
- 마스터를 제작하는 방법으로서, 상기 방법은:스패셜 필터 및 디퓨저를 통과하는 코히어런트 방사 광원에 밀리마스크 필름을 노출시키고,필름을 현상하며,포토레지스트 위에 현상 필름을 위치시키고,인코히어런트 광을 이용하여 필름을 통해 포토레지스트를 노출시키며, 그리고포토레지스트를 현상하는, 이상의 단계를 포함하는 것을 특징으로 하는 방법.
- 제 11 항에 있어서, 고해상도 리듀서를 이용하여 필름을 축소하는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 11 항에 있어서, 상기 방사 광선이 자외선 엑사이머 레이저를 포함하는 것을 특징으로 하는 방법.
- 금속 마스터를 제작하는 방법으로서, 상기 방법은:크롬층으로 글래스를 코팅하고,감광 매질로 크롬층을 코팅하며,컴퓨터에 의해 생성된 준-임의 진폭 마스크를 생성하고,컴퓨터에 의해 생성된 마스크를 통과하는 방사 광원으로 포토레지스트를 노출시키며,포토레지스트의 비노출부를 에칭하여 없애고,에칭하여 사라진 포토레지스트에 의해 노출된 금속을 에칭하며, 그리고잔여 포토레지스트를 씻어내는, 이상의 단계를 포함하는 것을 특징으로 하는 방법.
- 제 15 항에 있어서, 주사 몰딩 과정 및 스탬핑 중 하나로 에칭 금속을 이용하는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 15 항에 있어서, 상기 방사원이 자외선 엑사이머 레이저와 전자 빔 광원 중 하나인 것을 특징으로 하는 방법.
- 이미지세터를 이용하여 마스터 디퓨저를 제작하는 방법으로서, 상기 방법은:형태의 준-임의 패턴을 생성하고,상기 이미지세터로 마스크의 형태 준-임의 패턴을 기록하며,감광 매질을 마스크로 덮고,마스킹된 감광 매질을 인코히어런트 광원에 노출시키며, 이에 의해 형태의 임의 패턴이 감광 매질로 전달되고, 그리고감광 매질의 형태 임의 패턴을 실현하도록 감광 매질을 에칭하는, 이상의 단계를 포함하는 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 최대 길이 시프트 레지스터에 의해 형태의 준-임의 패턴이 생성되는 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 마스크는 포토그래픽 필름을 포함하는 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 감광 매질이 포토레지스트를 포함하는 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 인코히어런트 광원이 아크 광을 포함하는 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 인코히어런트 광원이 자외선 광원을 포함하는 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 인코히어런트 광원이 확산형인 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 상기 이미지세터가 엑사이머 레이저를 포함하는 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 상기 이미지세터가 전자 빔을 포함하는 것을 특징으로 하는 방법.
- 제 18 항에 있어서, 상기 감광 매질이 포토레지스트로 코팅된 드럼을 포함하는 것을 특징으로 하는 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7502398A | 1998-05-08 | 1998-05-08 | |
US09/075,023 | 1998-05-08 | ||
US09/137,397 | 1998-08-20 | ||
US09/137,397 US6303276B1 (en) | 1998-05-08 | 1998-08-20 | Method and apparatus for making optical master surface diffusers suitable for producing large format optical components |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010043419A true KR20010043419A (ko) | 2001-05-25 |
KR100574112B1 KR100574112B1 (ko) | 2006-04-25 |
Family
ID=22123057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020007012454A KR100574112B1 (ko) | 1998-05-08 | 1999-05-07 | 인코히어런트 광을 이용한 광학 마스터 제작법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6303276B1 (ko) |
JP (1) | JP5133954B2 (ko) |
KR (1) | KR100574112B1 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4261849B2 (ja) * | 2002-09-06 | 2009-04-30 | キヤノン株式会社 | 近接場光を用いた露光方法及び、近接場光を用いる露光装置 |
RU2253139C1 (ru) * | 2003-10-02 | 2005-05-27 | Орлов Вячеслав Васильевич | Способ изготовления спекл-диффузора |
US20060128852A1 (en) * | 2004-12-13 | 2006-06-15 | General Electric Company | Compositions for articles comprising replicated microstructures |
US20060128853A1 (en) * | 2004-12-13 | 2006-06-15 | General Electric Company | Compositions for articles comprising replicated microstructures |
WO2006127538A2 (en) * | 2005-05-20 | 2006-11-30 | Cadence Design Systems, Inc. | Manufacturing aware design and design aware manufacturing |
US7395516B2 (en) * | 2005-05-20 | 2008-07-01 | Cadence Design Systems, Inc. | Manufacturing aware design and design aware manufacturing |
US20060281021A1 (en) * | 2005-05-26 | 2006-12-14 | Inphase Technologies, Inc. | Illuminative treatment of holographic media |
US20060275670A1 (en) * | 2005-05-26 | 2006-12-07 | Inphase Technologies, Inc. | Post-curing of holographic media |
US20070082988A1 (en) * | 2005-10-06 | 2007-04-12 | General Electric Company | Compositions for articles comprising replicated microstructures |
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-
1998
- 1998-08-20 US US09/137,397 patent/US6303276B1/en not_active Expired - Lifetime
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1999
- 1999-05-07 KR KR1020007012454A patent/KR100574112B1/ko not_active IP Right Cessation
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JP2010049267A (ja) | 2010-03-04 |
KR100574112B1 (ko) | 2006-04-25 |
US6303276B1 (en) | 2001-10-16 |
JP5133954B2 (ja) | 2013-01-30 |
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