KR20000038717A - Epoxy resin composition for sealing semiconductor device - Google Patents
Epoxy resin composition for sealing semiconductor device Download PDFInfo
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- KR20000038717A KR20000038717A KR1019980053798A KR19980053798A KR20000038717A KR 20000038717 A KR20000038717 A KR 20000038717A KR 1019980053798 A KR1019980053798 A KR 1019980053798A KR 19980053798 A KR19980053798 A KR 19980053798A KR 20000038717 A KR20000038717 A KR 20000038717A
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/02—Polycondensates containing more than one epoxy group per molecule
- C08G59/04—Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
- C08G59/306—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/688—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing phosphorus
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Abstract
Description
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 에폭시수지, 경화제, 경화촉진제, 무기충진재 및 첨가제외에 실리콘 변성 에폭시수지와 잠재성 경화촉진제를 부가하고 무기충진재를 고충전화 함으로써 열충격변화에 따른 웨이퍼칩과 에폭시 봉지재 사이에 발생하는 접착문제를 해결할 수 있고, 신뢰성 및 성형특성이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for sealing semiconductor devices, and more particularly, to thermal shock by adding silicone-modified epoxy resins and latent curing accelerators in addition to epoxy resins, curing agents, curing accelerators, inorganic fillers and additives, and high-filling inorganic fillers. The present invention relates to an epoxy resin composition for semiconductor device encapsulation, which can solve an adhesion problem occurring between a wafer chip and an epoxy encapsulant according to a change, and has excellent reliability and molding characteristics.
최근 반도체 소자의 집적도는 나날이 향상되고 있으며 이에 따른 배선 소자크기의 대형화, 셀면적의 축소 및 다층배선화가 급속히 진전되고 있다. 반면에 반도체 소자를 외부환경으로부터 보호하는 팩키지(package)는 프린트 기판으로의 고밀도 실장 즉, 표면실장이라는 관점에서 소형, 박형화가 가속화되고 있는 실정이다.In recent years, the degree of integration of semiconductor devices is improving day by day, and thus, the size of wiring devices, the size of cells, and the number of multilayer wirings are rapidly progressing. On the other hand, packages that protect semiconductor devices from the external environment have been accelerated in size and thickness in terms of high-density mounting to a printed board, that is, surface mounting.
특히, 대형 반도체 소자를 소형, 박형 팩키지에 밀봉한 수지 밀봉형 반도체 장치에서는 외부환경의 온도 및 습도변화에 따른 열응력으로 인해 팩키지에 크랙 이 발생하거나 알루미늄 패드 부식발생등으로 고장 발생의 빈도가 높아지게 된다. 이에 따라서 밀봉용 에폭시 수지재료의 내크랙성, 저응력화를 통한 고신뢰성 반도체 봉지재가 요구되고 있다.In particular, in resin-sealed semiconductor devices in which large semiconductor devices are sealed in small and thin packages, the frequency of failure due to thermal stress caused by changes in temperature and humidity of the external environment, or cracks in aluminum pads is increased. do. Accordingly, there is a demand for a highly reliable semiconductor encapsulant through crack resistance and low stress of the epoxy resin material for sealing.
상기와 같은 요구를 해결하기 위한 방법의 예로는 내크랙성을 향상시키기 위하여 흡습율을 저하시키고 접착강도 및 고온강도를 향상시키는 방법, 저응력화를 위하여 충진재를 조절하여 고충전화하는 방법, 열팽창계수를 낮추는 방법 및 개질제를 첨가하여 저 탄성화를 이루는 방법등이 알려져 있다.Examples of methods for solving the above demands include a method of lowering the moisture absorption rate to improve crack resistance and improving adhesion strength and high temperature strength, a method of high filling by adjusting fillers for low stress, and a coefficient of thermal expansion. The method of lowering the amount and the method of achieving a low elasticity by adding a modifier are known.
이중 개질제를 첨가하여 저 탄성화를 달성하는 방법은 각종 고무성분에 의한 개질(일본 특개소 63-1894호, 일본특개평 5-291436호)이 검토되어 열적안정성이 우수한 실리콘 중합체를 배합, 개질시킨 에폭시수지 성형재료가 폭넓게 채택되고 있다. 이 방법에 의하면 가소제로 사용되는 실리콘 오일이 성형재료의 기초수지인 에폭시 수지 및 경화제와 상용성이 없기 때문에 기초수지중에 미립자 분산형태(해도구조)로 되어 내열성을 유지하면서 저탄성율을 이룰 수 있었다. 그러나, 이러한 방법은 리드프레임 및 리드온칩과 에폭시 봉지재와의 접착력 저하로 인한 문제점과 개질제 도입에 따른 성형성 불량으로 인하여 신뢰성이 높은 반도체 소자를 얻기가 어려웠다.In order to achieve low elasticity by adding a double modifier, modification by various rubber components (Japanese Patent Laid-Open No. 63-1894, Japanese Patent Laid-Open No. 5-291436) has been studied, and a silicone polymer having excellent thermal stability is blended and modified. Epoxy resin molding materials are widely adopted. According to this method, since the silicone oil used as a plasticizer is incompatible with the epoxy resin and the curing agent which are the base resins of the molding material, it is in the form of fine particle dispersion (sea island structure) in the base resin, thereby achieving low elastic modulus while maintaining heat resistance. However, this method has been difficult to obtain a highly reliable semiconductor device due to the problems caused by a decrease in adhesion between the lead frame and the lead-on chip and the epoxy encapsulant and poor moldability due to the introduction of a modifier.
본 발명의 목적은 상기와 같은 문제점을 해결하기 위한 것으로, 가소제로 첨가되는 실리콘 오일을 변성화한 형태의 실리콘 변성 에폭시수지를 올소크레졸 노볼락 또는 바이페닐계 에폭시에 추가로 첨가함으로써 리드프레임 및 리드온 칩과 에폭시 봉지재 사이의 접착특성을 향상시켜 박리를 개선함과 동시에 개질제의 상용성에 따른 성형성 불량을 해결하였으며, 무기충진재를 고충전화함으로서 흡습율 및 열팽창계수를 감소시키고, 기계적 강도를 향상시켜 반도체 소자 성형시 발생하는 보이드(void) 발생을 억제할 수 있는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것이다.An object of the present invention is to solve the above problems, by adding a silicone-modified epoxy resin of the modified form of the silicone oil added as a plasticizer to the allocresol novolac or biphenyl-based epoxy further lead frame and lead Improved adhesion between on-chip and epoxy encapsulant to improve peeling and solved moldability defects due to the compatibility of modifiers. High filling of inorganic filler reduces moisture absorption and thermal expansion coefficient and improves mechanical strength. It is to provide an epoxy resin composition for semiconductor element sealing that can suppress the generation of voids generated during semiconductor element molding.
즉, 본 발명은 에폭시수지, 경화제, 경화촉진제, 무기충진재 및 첨가제로 이루어진 에폭시 수지 조성물에 있어서, 상기 에폭시수지는 올소크레졸 노볼락계 에폭시수지와 바이페닐계 에폭시수지외에 화학식 3으로 나타낼 수 있는 실리콘 변성 에폭시수지가 전체 조성물에 대하여 0.1 내지 5.0중량% 추가로 첨가되고, 상기 경화촉진제와 함께 잠재성 경화촉진제 0.01 내지 0.3중량%가 첨가되고, 상기 무기충진재의 함량은 82 내지 89중량%인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.That is, the present invention is an epoxy resin composition consisting of an epoxy resin, a curing agent, a curing accelerator, an inorganic filler and an additive, wherein the epoxy resin is a silicone represented by Chemical Formula 3 in addition to an allocresol novolak epoxy resin and a biphenyl epoxy resin. Modified epoxy resin is further added 0.1 to 5.0% by weight based on the total composition, 0.01 to 0.3% by weight of the latent curing accelerator is added together with the curing accelerator, the content of the inorganic filler is 82 to 89% by weight It relates to an epoxy resin composition for sealing semiconductor elements.
이하, 본 발명을 더욱 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail.
본 발명에서 사용된 에폭시 수지는 2종류로 대별될 수 있는 바, 먼저 화학식 1로 나타낼 수 있는 올소크레졸 노볼락계 에폭시 수지와 화학식2로 나타낼 수 있는 바이페닐계 에폭시 수지이다.Epoxy resins used in the present invention can be roughly divided into two types: first, an allocresol novolac epoxy resin represented by Formula 1 and a biphenyl epoxy resin represented by Formula 2.
R은 메틸기 또는 하이드록시기이고, G는 글리시딜기이다.R is a methyl group or a hydroxyl group, G is a glycidyl group.
화학식 1 및 2의 올소크레졸 노롤락계 에폭시 수지 및 바이페닐계 에폭시 수지는 에폭시 당량이 170∼250인 고순도의 에폭시수지로서 연화점 40∼80℃범위의 것이 적당하고, 그 예로는 디글리시딜에테르비스페놀 A, 디글리시딜에테르 비스페놀 F, 올소크레졸 노볼락, 바이페닐, 디사이클로펜타디엔, 나프탈렌 중에서 1종을 선택하거나 2종 이상을 혼합하여 사용할 수 있고, 사용량은 3.0 내지 12.0중량%가 바람직하다.Olsocresol norolak-based epoxy resins and biphenyl-based epoxy resins of the general formulas (1) and (2) are epoxy resins having an epoxy equivalent of 170 to 250, and have a softening point in the range of 40 to 80 ° C. A, diglycidyl ether bisphenol F, allocresol novolac, biphenyl, dicyclopentadiene, naphthalene can be selected from one type or a mixture of two or more types, and the amount of use is preferably 3.0 to 12.0% by weight. .
상기의 에폭시 수지외에 본 발명에서 사용된 에폭시수지는 실리콘 변성 에폭시 수지로써 하기 화학식 3으로 나타낼 수 있으며, 내부구조에 반응성 유기기와 폴리실록산기를 지니고 있는 구조를 이룬다. 실리콘 변성 에폭시수지의 사용량은 전체조성물에 대하여 0.1 내지 5.0중량%로 사용하는 것이 바람직한데, 사용량이 0.1중량% 미만인 경우에는 리드프레임 및 리드온칩과 에폭시봉지재간의 원하는 접착 특성을 얻을 수 없고, 5.0중량%를 초과하는 경우에는 반응성에 의한 유동성 저하로 인하여 성형성이 나빠지게 된다.In addition to the epoxy resin described above, the epoxy resin used in the present invention may be represented by the following Chemical Formula 3 as a silicone-modified epoxy resin, and has a structure having a reactive organic group and a polysiloxane group in an internal structure. The amount of the silicone-modified epoxy resin is preferably used in an amount of 0.1 to 5.0% by weight based on the total composition. When the amount is less than 0.1% by weight, the desired adhesion characteristics between the lead frame and the lead-on chip and the epoxy encapsulant cannot be obtained. When it exceeds weight%, moldability deteriorates due to a decrease in fluidity due to reactivity.
여기서, G는 글리시딜기, R1은 각각 같거나 다른 메틸기 또는 페닐기, X는 반응성을 지닌 유기기, Y는 크레졸 또는 페놀, 바이페닐 비스페놀이고, n은 5∼100의 정수이다.Here, G is a glycidyl group, R 1 is the same or different methyl group or phenyl group, X is a reactive organic group, Y is cresol or phenol, biphenyl bisphenol, n is an integer of 5 to 100.
실리콘 변성 에폭시 수지에 사용되는 폴리실록산은 분자량이 500 내지 10,000 바람직하게는 1,000 내지 4,000인 것이 사용된다. 또한, 폴리실록산 유기기로는 아미노, 메르카프토기 등 반응성을 지닌 유기기가 가능하며 치환위치는 폴리실록산에 말단형, 측쇄형, 측쇄말단형등이 바람직하다.The polysiloxane used for the silicone-modified epoxy resin has a molecular weight of 500 to 10,000, preferably 1,000 to 4,000. In addition, as the polysiloxane organic group, an organic group having a reactivity such as an amino group or a mercapto group is possible, and the substitution position is preferably terminal type, side chain type, or side chain terminal type in the polysiloxane.
실리콘 변성 에폭시 프리폴리머의 코폴리머(어덕트)제조에 사용되는 에폭시수지로는 디글리시딜에테르비스페놀 A, 디글리시딜에테르비스페놀 F, 싸이클로알리파틱계 에폭시, 크레졸 노볼락계 에폭시, 바이페닐계, 디사이클로펜타디엔계, 나프탈렌계 에폭시로 이루어진 군으로부터 1종 또는 2종 이상 병행하여 사용할 수 있다.Epoxy resins used in the production of copolymers (adducts) of silicone modified epoxy prepolymers include diglycidyl ether bisphenol A, diglycidyl ether bisphenol F, cycloaliphatic epoxy, cresol novolac epoxy, and biphenyl type. And dicyclopentadiene-based or naphthalene-based epoxy, and may be used alone or in combination of two or more.
본 발명에서 사용된 경화제로는 2개 이상의 수산기를 갖고 수산기 당량이 100 내지 200인 페놀 노볼락 수지, 크레졸 노볼락수지, 자일록(Xylok)수지, 디사이크로펜타디엔수지 등이 사용될 수 있으며, 이를 단독 또는 2종 이상 병행하여 사용할 수 있다. 에폭시수지와 경화제의 당량비는 수산기 당량에 대한 에폭시 당량이 0.9 내지 1.1 범위의 것이 좋으며, 경화제의 사용량은 전체 조성물에 대하여 2.0 내지 6.5중량%가 바람직하다.As the curing agent used in the present invention, a phenol novolak resin, a cresol novolak resin, a xylok resin, a dicyclopentadiene resin, etc. having two or more hydroxyl groups and having a hydroxyl equivalent of 100 to 200 may be used. These may be used alone or in combination of two or more. The equivalent ratio of the epoxy resin and the curing agent is preferably in the range of 0.9 to 1.1 epoxy equivalents relative to the hydroxyl equivalent, and the amount of the curing agent is preferably 2.0 to 6.5% by weight based on the total composition.
본 발명에서 경화촉진제와 함께 사용되는 잠재성 경화촉진제는 실리콘 변성 에폭시 수지의 도입으로 인한 반응속도를 조절하기 위해 디시안디아미드형 또는 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트, 테트라페닐보론염과 같은 트리페닐포스핀 어덕트등이 사용될 수 있고, 사용량은 전체 에폭시 수지 조성물에 대하여 0.01 내지 0.30중량%가 바람직하다. 잠재성 경화촉진제와 함께 경화특성을 향상시킬 수 있는 경화촉진제는 아민계통의 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 및 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기포스핀류등으로 1종 또는 2종이상 병행하여 사용될 수 있다.In the present invention, the latent curing accelerator used in combination with the curing accelerator may be dicyandiamide or tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, Triphenylphosphine adducts such as tetraphenylboron salt and the like can be used, and the amount of use is preferably 0.01 to 0.30% by weight based on the total epoxy resin composition. In addition to the latent curing accelerators, the curing accelerators capable of improving curing characteristics are amine-based benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) phenol and 2-methylimidazole, 2 -Imidazoles such as -phenylimidazole, organic phosphines such as triphenylphosphine, diphenylphosphine, phenylphosphine and the like can be used in combination of one or two or more.
본 발명에서 사용된 무기충진재는 그 평균입자가 0. 1 내지 35.0㎛인 용융 또는 합성 실리카를 사용하는 것이 바람직하며, 충전량은 조성물 전체에 대해 82 내지 89중량%가 바람직하다. 무기충진재가 82중량% 미만인 경우에는 충분한 강도와 저열팽창화를 실현할 수 없으며 수분침투가 용이해져 신뢰성 특성에 치명적이고, 89중량%를 초과하는 경우에는 유동특성의 저하로 인하여 성형성이 나빠질 우려가 있어 바람직하지 못하다.As the inorganic filler used in the present invention, it is preferable to use fused or synthetic silica having an average particle of 0.01 to 35.0 µm, and the amount of the filler is preferably 82 to 89% by weight based on the total composition. If the inorganic filler is less than 82% by weight, sufficient strength and low thermal expansion cannot be realized, and moisture permeation is easy, which is fatal to the reliability characteristics. If the inorganic filler exceeds 89% by weight, the moldability may be deteriorated due to the deterioration of the flow characteristics. It is not desirable.
이외에도 통상 성형시에 사용되는 첨가제들이 포함될 수 있는데, 예를 들면 고급지방산, 천연지방산, 에스테르계 왁스나 카본블랙, 유.무기염료 등의 착색제, 가교증진제, 난연보조제, 레벨링제 등이 사용될 수 있다.In addition, additives commonly used in molding may be included. For example, higher fatty acids, natural fatty acids, colorants such as ester waxes or carbon blacks, organic and inorganic dyes, crosslinking enhancers, flame retardant aids, and leveling agents may be used. .
이하, 본 발명을 실시예를 들어 더욱 상세히 설명하고자 하나 본 발명이 하기 실시예에 의하여 제한되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by the following Examples.
제조예 1Preparation Example 1
옥시란기를 한 분자내에 2개 이상 지닌 에폭시 당량이 270 내지 300인 바이페닐계 에폭시 수지(연화점 65℃) 1200g을 둥근 사구 플라스크 반응관에 넣어 온도 90∼110℃사이에서 충분히 녹이면서 교반하여 준다. 여기에 폴리실록산 실리콘 디메틸 3-감마 아미노 프로필수지, 분자량이 1,000∼4,000인 양말단에 아미노기로 치환된 폴리실록산 수지 250g을 드로핑펀널에 의하여 투입하여, 반응온도 140∼180℃, 교반속도 2,000rpm 이상으로 2시간 반응하였다. 이와 같은 방법으로 수득된 실리콘 변성 에폭시 수지의 점도는 3∼6포이즈(con plate 점도계)였다.1200 g of a biphenyl-based epoxy resin (softening point 65 ° C.) having an equivalent weight of two or more oxirane groups in one molecule is placed in a round-necked flask reaction tube and stirred while sufficiently melting at a temperature of 90 to 110 ° C. The polysiloxane silicone dimethyl 3-gamma amino propyl resin and 250 g of polysiloxane resin substituted with an amino group were introduced into a sock end having a molecular weight of 1,000 to 4,000 by a dropping funnel, and the reaction temperature was 140 to 180 캜 and the stirring speed was 2,000 rpm or more. The reaction was carried out for 2 hours. The viscosity of the silicone modified epoxy resin obtained by such a method was 3-6 poises (con plate viscometer).
제조예 2Preparation Example 2
옥시란기를 한 분자내에 2개 이상 지닌 에폭시 당량이 160∼180인 비스페놀F형계 고순도 에폭시 수지 300g, 크레졸노볼락 에폭시(당량 190∼210) 850g을 둥근 사구플라스크 반응관에 넣어 온도 90∼110℃사이에서 충분히 녹이면서 교반하여 준다. 여기에 폴리실록산 실리콘 디페닐 메르카프토 프로필 수지 분자량이 2,000∼5,000인 양말단에 메르카프토기로 치환된 폴리실록산 수지 200g을 드로핑펀널로 여기에 투입하여 원하는 실리콘 변성 에폭시 제조물을 얻을 수 있었으며, 점도는 2∼4포이즈이었다.300 g of bisphenol F-type high-purity epoxy resins having 160 to 180 epoxy equivalents having two or more oxirane groups in one molecule, and 850 g of cresol novolac epoxy (equivalent to 190 to 210) were placed in a round four-necked flask reaction tube at a temperature of 90 to 110 ° C. It is stirred while melting sufficiently. Herein, 200 g of polysiloxane resin substituted with mercapto group was added to a sock end having a polysiloxane silicone diphenyl mercapto propyl resin molecular weight of 2,000 to 5,000, using a dropping funnel to obtain a desired silicone-modified epoxy product. It was 2-4 poise.
실시예 1∼4, 비교예 1∼4Examples 1-4, Comparative Examples 1-4
상기와 같이 제조된 실리콘 변성 에폭시수지에 표 1 및 2와 같은 조성으로 나머지 성분들을 배합하여 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 분쇄하고 혼합한 뒤 1차 분말제조물을 얻은 후 롤밀이나 니이더를 이용하여 100℃ 약 10분 이내로 용융혼련한 뒤 냉각, 분쇄과정을 거쳐 에폭시수지 조성물을 제조하였다. 특히, 에폭시 수지 조성물에 난연성을 부여하기 위하여 에폭시 당량 280∼290, 브롬함량 35∼38%인 폴리글리시딜에테르 브롬화 페놀 에폭시를 전체 조성물에 대하여 0.5∼2.0중량%를 사용하였다.After mixing the remaining ingredients in the silicone-modified epoxy resin prepared as shown in Tables 1 and 2, uniformly pulverized and mixed using a Henschel mixer or a Rodige mixer, and then obtained a primary powder product roll mill or kneader Epoxy resin composition was prepared by melt kneading within about 10 minutes at 100 ° C., followed by cooling and grinding. In particular, in order to impart flame retardancy to the epoxy resin composition, 0.5 to 2.0% by weight of polyglycidyl ether brominated phenol epoxy having an epoxy equivalent of 280 to 290 and a bromine content of 35 to 38% was used.
제조된 에폭시 수지조성물의 일반물성을 평가하여 표 3에 나타내었고, 신뢰성평가는 표 4에 나타내었다.The general physical properties of the prepared epoxy resin composition was evaluated and shown in Table 3, and the reliability evaluation is shown in Table 4.
제조된 에폭시 수지 조성물에 대하여는 다음과 같은 방법으로 물성 및 신뢰성을 평가하였으며, 신뢰성 시험을 위해 SOP(Small Outline Package)형 반도체 소자 및 성형시에는 MPS(Multi Plunger System) 성형기를 이용하여 175℃에서 60초간 성형시킨 후 초음파설비(SAT)를 이용하여 리드프레임 및 리드온칩과 에폭시봉지재 사이의 박리를 측정하였으며 175℃에서 6시간동안 후경화시킨 후 시간에 따른 열충격시험을 행하여 이에 대한 평가를 진행하였다.The prepared epoxy resin composition was evaluated for physical properties and reliability by the following method, and in the case of SOP (Small Outline Package) type semiconductor device and molding, the MPS (Multi Plunger System) molding machine was used at 60 ° C at 175 ° C. After molding for a second time, the peeling between the lead frame and the lead-on chip and the epoxy encapsulant was measured by using an ultrasonic apparatus (SAT), and after curing at 175 ° C. for 6 hours, the thermal shock test was conducted to evaluate the result. .
(중량%)(weight%)
1)일본 카야쿠(Nippon kayaku): EOCN 1020-55 1) Kayaku Japan (Nippon kayaku): EOCN 1020-55
2)실리콘 변성 에폭시 어덕트 : 제조예 1(아미노기) 2) Silicone modified epoxy adduct: Preparation Example 1 (amino group)
3)실리콘 변성 에폭시 어덕트 : 제조예 2(메르카프토기) 3) Silicone modified epoxy adduct: Preparation Example 2 (mercapto group)
4)유카셀(Yuka shell) : YX-4000 H 4) Yucca shell (Yuka shell): YX-4000 H
5)일본 카야쿠(Nippon kayaku) : Bren-s 5) Nippon kayaku: Bren-s
6)아지모토(Ajimoto) : PN-23 6) Ajimoto: PN-23
7)UCC : 실란 A-187 7) UCC: Silane A-187
(중량%)(weight%)
1)일본 카야쿠(Nippon kayaku): EOCN 1020-55 1) Kayaku Japan (Nippon kayaku): EOCN 1020-55
2)실리콘 변성 에폭시 어덕트 : 제조예 1(아미노) 2) Silicone modified epoxy adduct: Preparation Example 1 (amino)
3)유카셀(Yuka shell) : YX-4000 H 3) Yucca shell (Yuka shell): YX-4000 H
4)일본 카야쿠(Nippon kayaku) : Bren-s 4) Nippon kayaku: Bren-s
5)토레이 다우(Toray Dow) : TSL-8331 5) Toray Dow: TSL-8331
6)일본합성고무 : 메타브렌 6) Japan Synthetic Rubber: Meta Bren
7)UCC : 실란 A-187 7) UCC: Silane A-187
평가방법Assessment Methods
스파이럴 플로우(Spiral Flow) : EMMI규격을 기준으로 금형을 제작하여 성형 온도(175℃), 성형압력 70kgf/㎠에서 유동길이를 평가하여 측 정하였다.Spiral Flow (Spiral Flow): Mold was manufactured based on EMMI standard and measured by measuring the flow length at molding temperature (175 ℃) and molding pressure 70kgf / ㎠.
Hot Hardness : 쇼와 D경계도로 성형온도 175℃, 90초후 경도를 측정하였다. 유리전이온도(Tg), 열팽창계수 : TMA(Thermomechanical Analyser로 평가하 였다(승온속도 10℃/min)Hot Hardness: Hardness was measured after molding at 175 ℃ for 90 seconds using Showa D boundary. Glass transition temperature (Tg), thermal expansion coefficient: TMA (Thermomechanical Analyser) was evaluated (heating rate 10 ℃ / min)
부착력 : 리드프레임(얼로이 44)와 에폭시 봉지재와의 인장력을 측정하여 평 가하였다(UTM 이용).Adhesion: The tensile strength between the lead frame (Aloy 44) and the epoxy encapsulant was measured and evaluated (using UTM).
굴곡강도 및 굴곡탄성율 : UTM(Universal Test Machine)을 이용하여 ASTM D190에 의거 평가하였다.Flexural strength and flexural modulus: evaluated according to ASTM D190 using UTM (Universal Test Machine).
평가방법Assessment Methods
박리평가 : 웨이퍼칩(LOC : Lead-on chip)과 에폭시 봉지재간의 계면상에서 발생한 반도체 소자수/ 총시험한 반도체 소자수로 평가하였다. :SAT 설비Peeling evaluation: The number of semiconductor devices generated at the interface between the wafer chip (LOC: lead-on chip) and the epoxy encapsulant was evaluated. : SAT facility
내크랙성 :프리컨디션(Precondition)후 열충격 환경시험기(Temperature Cycle Test)에서 1,000사이클 경화후 비파괴검사기인 SAT(Scanning Acoustic Tomograph)로 크랙발생 유무를 평가하 였다.Crack resistance: After preconditioning, the thermal shock environment tester (Temperature Cycle Test) was evaluated for cracking by SAT (Scanning Acoustic Tomograph) after 1,000 cycles of curing.
a)프리컨디션 조건a) Preconditions
에폭시수지 조성물로 제조한 반도체 소자를 125℃에서 24시간 건조시킨 후 5사이클의 열충격시험을 거쳐 다시 85℃/85% 상 대습도 조건하에서 168시간동안 방치시킨 후 235℃, 10초동 안 IR리플로우를 3회 통과시켜 1차로 프리컨디션 조건하에서 팩키지 크랙발생 유무 및 박리를 평가한다.The semiconductor device prepared from the epoxy resin composition was dried at 125 ° C. for 24 hours, and then subjected to 5 cycles of thermal shock test, and then left for 168 hours under 85 ° C./85% relative humidity. IR reflow was performed at 235 ° C. for 10 seconds. After passing through three times, the presence of package cracks and peeling were evaluated primarily under precondition conditions.
b)냉열충격 시험b) cold shock test
반도체 팩키지를 -65에서 10분, 25℃에서 5분, 150℃에서 10 분씩 방치하는 것을 1사이클로하여 1,000사이클을 진행한다.1,000 cycles are carried out with 1 cycle of leaving the semiconductor package at -65 for 10 minutes, 25 ° C for 5 minutes, and 150 ° C for 10 minutes.
표 3 및 표 4의 일반물성 및 신뢰성 평가에서 나타낸 바와 같이 리드온칩 및 리드프레임과 에폭시 봉지재와의 접착특성이 월등히 향상되었고, 신뢰성 측면에서 우수한 특성을 나타내었다.As shown in the evaluation of physical properties and reliability of Table 3 and Table 4, the adhesion properties between the lead-on chip, the lead frame and the epoxy encapsulation material were significantly improved, and the characteristics were excellent in terms of reliability.
이상에서 살펴본 바와 같이 본 발명에 의한 에폭시 수지 조성물은 실리콘 단독사용에 따른 상용성문제를 해결하여 리드프레임 및 리드온칩과 에폭시 봉지재간의 접착특성 및 내크랙성을 향상시킴과 동시에 무기충진재를 고충전화함으로써 흡습율 및 열팽창계수를 감소시키고 기계적 강도를 향상시킬 수 있게된다.As described above, the epoxy resin composition according to the present invention solves the compatibility problem caused by the use of silicon alone, thereby improving the adhesive properties and crack resistance between the lead frame, the lead-on chip and the epoxy encapsulant, and at the same time filling the inorganic filler with high filling. It is possible to reduce the moisture absorption rate and the coefficient of thermal expansion and to improve the mechanical strength.
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Cited By (6)
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KR100359904B1 (en) * | 2000-09-04 | 2002-11-07 | 제일모직주식회사 | Epoxy molding compound for sealing of electronic component |
KR100480945B1 (en) * | 2001-12-28 | 2005-04-06 | 제일모직주식회사 | Epoxy Resin Composition for Sealing Semiconductor Device |
KR100565420B1 (en) * | 1999-12-22 | 2006-03-30 | 제일모직주식회사 | Epoxy molding compound for sealing of electronic component |
US9150686B2 (en) | 2011-08-25 | 2015-10-06 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxysilyl group, method of preparing the same, composition and cured product comprising the same, and uses thereof |
CN116083018A (en) * | 2022-12-30 | 2023-05-09 | 广东粤港澳大湾区黄埔材料研究院 | QFN packaging material, preparation method and application thereof |
US11840601B2 (en) | 2019-11-15 | 2023-12-12 | Korea Institute Of Industrial Technology | Composition of alkoxysilyl-functionalized epoxy resin and composite thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06228275A (en) * | 1993-02-08 | 1994-08-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
JP2742007B2 (en) * | 1993-10-26 | 1998-04-22 | 松下電工株式会社 | Epoxy resin composition |
JP2925905B2 (en) * | 1993-12-24 | 1999-07-28 | 住友ベークライト株式会社 | Epoxy resin composition |
JP3261907B2 (en) * | 1994-12-02 | 2002-03-04 | 信越化学工業株式会社 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
JPH10158473A (en) * | 1996-12-03 | 1998-06-16 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing optical semiconductor element, and optical semiconductor device sealed by using this epoxy resin composition |
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1998
- 1998-12-08 KR KR10-1998-0053798A patent/KR100429363B1/en not_active IP Right Cessation
Cited By (8)
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KR100565420B1 (en) * | 1999-12-22 | 2006-03-30 | 제일모직주식회사 | Epoxy molding compound for sealing of electronic component |
KR100359904B1 (en) * | 2000-09-04 | 2002-11-07 | 제일모직주식회사 | Epoxy molding compound for sealing of electronic component |
KR100480945B1 (en) * | 2001-12-28 | 2005-04-06 | 제일모직주식회사 | Epoxy Resin Composition for Sealing Semiconductor Device |
US9150686B2 (en) | 2011-08-25 | 2015-10-06 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxysilyl group, method of preparing the same, composition and cured product comprising the same, and uses thereof |
US9896535B2 (en) | 2011-08-25 | 2018-02-20 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxysilyl group, method of preparing the same, composition and cured product comprising the same, and uses thereof |
US11840601B2 (en) | 2019-11-15 | 2023-12-12 | Korea Institute Of Industrial Technology | Composition of alkoxysilyl-functionalized epoxy resin and composite thereof |
CN116083018A (en) * | 2022-12-30 | 2023-05-09 | 广东粤港澳大湾区黄埔材料研究院 | QFN packaging material, preparation method and application thereof |
CN116083018B (en) * | 2022-12-30 | 2023-10-13 | 广东粤港澳大湾区黄埔材料研究院 | QFN packaging material, preparation method and application thereof |
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