KR20000026372A - Device for chemical mechanical polishing - Google Patents
Device for chemical mechanical polishing Download PDFInfo
- Publication number
- KR20000026372A KR20000026372A KR1019980043880A KR19980043880A KR20000026372A KR 20000026372 A KR20000026372 A KR 20000026372A KR 1019980043880 A KR1019980043880 A KR 1019980043880A KR 19980043880 A KR19980043880 A KR 19980043880A KR 20000026372 A KR20000026372 A KR 20000026372A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- chemical mechanical
- mechanical polishing
- present
- water track
- Prior art date
Links
- 239000000126 substance Substances 0.000 title claims abstract description 22
- 238000005498 polishing Methods 0.000 title claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 244000185238 Lophostemon confertus Species 0.000 claims abstract description 6
- 238000007517 polishing process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
본 발명은 웨이퍼를 부러슁하는 브러슁박스와, 상기 브러슁 박스을 거친 웨이퍼를 이동시키는 워터트랙과, 상기 워터 트랙을 거친 웨이퍼를 세정하는 린즈링부를 구비한 화학기계적연마장치에 있어서, 상기 워터 트랙의 마지막 부위와 린즈링부의 앞부분 사이에 웨이퍼를 밀어줄 수 있는 푸셔가 구비된 것을 특징으로 한다. 이로써, 본 발명은 로봇이 웨이퍼를 픽업후 스핀너에 정확히 얼라인하여 웨이퍼 파손 또는 에러를 방지할 수 있다.The present invention relates to a chemical mechanical polishing apparatus including a brush box for breaking a wafer, a water track for moving a wafer through the brush box, and a rinse ring for cleaning the wafer over the water track, wherein the last portion of the water track is provided. And a pusher capable of pushing the wafer between the front and the rinse ring portion. As a result, the present invention can prevent the wafer breakage or error by accurately aligning the wafer to the spinner after picking up the wafer.
Description
본 발명은 반도체 소자를 제조하는 제조장치에 관한 것으로, 보다 상세하게는 화학기계적연마(Chemical mechanical polishing : CMP)장치에 관한 것이다.The present invention relates to a manufacturing apparatus for manufacturing a semiconductor device, and more particularly to a chemical mechanical polishing (CMP) apparatus.
일반적으로, 반도체 제조 공정 중에 화학기계적연마(CMP)장치를 이용한 화학기계적연마공정이 있다. 상기 화학기계적연마 공정은 텅스텐이나 산화막이 입혀진 웨이퍼를 탑재한 헤드를 특수 폴리싱용 패드위에 올린 상태에서 회전하면서 화학연마제인 슬러리를 흘려보내 불규칙하고 평평하지 않은 텅스텐이나 산화막의 표면을 아주 미세하게 연마하는 공정이다. 상기 화학기계적연마공정은 스루풋(through-put)이 좋아 많이 사용되고 있다.In general, there is a chemical mechanical polishing process using a chemical mechanical polishing (CMP) device during the semiconductor manufacturing process. The chemical mechanical polishing process rotates a head mounted with a tungsten or oxide coated wafer on a special polishing pad while flowing a slurry of a chemical polishing agent to finely polish the surface of an irregular and uneven tungsten or oxide film. It is a process. The chemical mechanical polishing process has been widely used because of good through-put.
그런데, 종래의 화학기계적연마장치의 세정단계에서 웨이퍼는 린즈링부(rinse ring part)로 옮겨서 순수에 의해 최종적으로 세정하게 된다. 그러나, 상기 세정단계에서 웨이퍼가 린즈링부로 정확히 이동하지 못하는 문제가 발생한다. 이렇게 되면, 상기 세정된 웨이퍼를 로봇이 픽업후 스핀너(spinner)로 정확히 로딩하지 못하여 스핀시 웨이퍼가 깨지는 문제가 발생한다.However, in the cleaning step of the conventional chemical mechanical polishing apparatus, the wafer is moved to a rinse ring part and finally cleaned by pure water. However, there is a problem that the wafer does not move correctly to the rinse ring portion in the cleaning step. In this case, the cleaned wafer may not be loaded correctly into the spinner after picking up by the robot, thereby causing a problem of breaking the wafer during spin.
따라서, 본 발명이 이루고자 하는 기술적 과제는 상술한 문제점을 해결할 수 있는 화학기계적연마장치를 제공하는 데 있다.Therefore, the technical problem to be achieved by the present invention is to provide a chemical mechanical polishing apparatus that can solve the above problems.
도 1은 본 발명의 화학기계적연마장치를 설명하기 위하여 도시한 개략도이다.1 is a schematic view for explaining the chemical mechanical polishing apparatus of the present invention.
상기 기술적 과제를 달성하기 위하여, 본 발명은 웨이퍼를 부러슁하는 브러슁박스와, 상기 브러슁 박스을 거친 웨이퍼를 이동시키는 워터트랙과, 상기 워터 트랙을 거친 웨이퍼를 세정하는 린즈링부를 구비한 화학기계적연마장치에 있어서,상기 워터 트랙의 마지막 부위와 린즈링부의 앞부분 사이에 웨이퍼를 밀어줄 수 있는 푸셔가 구비된 것을 특징으로 하는 화학기계적연마장치를 제공한다.In order to achieve the above technical problem, the present invention provides a chemical mechanical polishing apparatus comprising a brush box for breaking a wafer, a water track for moving the wafer through the brush box, and a rinse ring unit for cleaning the wafer over the water track. The present invention provides a chemical mechanical polishing apparatus comprising a pusher capable of pushing a wafer between a last portion of the water track and a front portion of a rinse ring portion.
이하, 첨부 도면을 참조하여 본 발명의 실시예를 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
먼저, 본 발명의 화학기계적연마장치의 작동 상태를 설명한다.First, the operating state of the chemical mechanical polishing apparatus of the present invention will be described.
구체적으로, 화학기계적연마 장치는 카세트에서 인덱스 테이블로 웨이퍼를 이동시킨다. 이어서, 이동된 웨이퍼를 웨이퍼 홀더를 이용하여 상기 웨이퍼를 진공으로 잡은 다음 주 연마 테이블로 이동하여 웨이퍼를 연마한 후, 인덱스 테이블에 블로우 오프(blow-off)시킨다. 다음에, 연마가 끝난 웨이퍼는 세정부를 통과한 후 건조하여 임의의 카세트에 탑재되면 화학기계적연마공정은 끝나게 된다. 여기서, 본 발명의 화학기계적연마장치의 세정부를 상세히 설명한다.Specifically, the chemical mechanical polishing apparatus moves the wafer from the cassette to the index table. The transferred wafer is then vacuumed using the wafer holder and then moved to the main polishing table to polish the wafer and then blow-off to the index table. Next, the polished wafer is passed through the cleaning section, dried, and placed in an arbitrary cassette, thereby completing the chemical mechanical polishing process. Here, the washing | cleaning part of the chemical mechanical polishing apparatus of this invention is demonstrated in detail.
도 1은 본 발명의 화학기계적연마장치를 설명하기 위하여 도시한 개략도이다.1 is a schematic view for explaining the chemical mechanical polishing apparatus of the present invention.
구체적으로, 본 발명의 화학기계적장치는 브러슁 박스(1, brushing box)에서 2번의 브러싱을 거친 웨이퍼(3)는 워터 트랙(5, water track)을 거쳐 린즈링부(7)에서 순수(9)에 의해 최종적으로 세정된다. 상기 린즈링부(7)의 동작 상태를 살표보면, 브러싱을 끝낸 웨이퍼(3)가 약 45도로 기운 린즈링부의 말단(즉, B부분)에 설치된 U자형의 링(도시 안됨)에 팁으로 고정되고, 웨이퍼(3)의 상단에 순수라인(11)을 통해 순수(9)를 흘려 웨이퍼(3)를 린즈하는 방식이다. 그러나, 종래의 화학기계적연마장치에서는 웨이퍼가 린즈링부의 말단까지 내려가지 못하는 문제가 발생한다.Specifically, in the chemical mechanical apparatus of the present invention, the wafer 3 that has been brushed twice in the brushing box 1 is transferred from the rinse ring portion 7 to the pure water 9 via the water track 5. Finally washed. When the operating state of the rinse ring portion 7 is shown, the brushed wafer 3 is fixed to the U-shaped ring (not shown) provided at the end of the rinse ring portion (ie, portion B), which is tilted at about 45 degrees, The pure water 9 flows through the pure water line 11 on the upper end of the wafer 3 to rinse the wafer 3. However, in the conventional chemical mechanical polishing apparatus, there is a problem that the wafer does not descend to the end of the rinse ring portion.
이러한 문제를 해결하기 위해 본 발명은 워터 트랙(5)의 마지막 부위와 린즈링부(7)의 앞부분 사이에 웨이퍼를 밀어줄 수 있는 푸셔(13: pusher)를 장착한다. 다시 말해서, 웨이퍼(3)가 워터 트랙(5)을 따라 흘러가자다 경사진 부위에 걸려 웨이퍼가 린즈링부(7)의 말단으로 내려가지 못함을 푸셔(13)가 밀어주어 웨이퍼(3)를 린즈링부(7)의 말단까지 밀어주게 한다. 더욱이, 본 발명은 웨이퍼(3)가 린즈링부(7)의 말단에 내려가더라도 B부위에까지 완전히 웨이퍼가 내려가지 못함을 푸셔(13)로 밀어주어 로봇이 그 웨이퍼를 픽업후 스핀너에 정확히 얼라인하여 드라이함으로써 웨이퍼 파손 또는 에러를 방지할 수 있다.In order to solve this problem, the present invention mounts a pusher 13 that can push the wafer between the last portion of the water track 5 and the front of the rinse ring portion 7. In other words, when the wafer 3 flows along the water track 5, the pusher 13 pushes the wafer 3 to the rinsing ring portion by catching the inclined portion and preventing the wafer from falling to the end of the rinse ring portion 7. Push it to the end of (7). Furthermore, the present invention pushes the pusher 13 with the pusher 13 to prevent the wafer from fully descending to the portion B even when the wafer 3 descends to the end of the rinse ring portion 7, so that the robot accurately aligns the wafer with the spinner. Drying can prevent wafer breakage or errors.
이상, 실시예를 통하여 본 발명을 구체적으로 설명하였지만, 본 발명은 이에 한정되는 것이 아니고, 본 발명의 기술적 사상 내에서 당 분야에서 통상의 지식으로 그 변형이나 개량이 가능하다.As mentioned above, although this invention was demonstrated concretely through the Example, this invention is not limited to this, A deformation | transformation and improvement are possible with the conventional knowledge in the art within the technical idea of this invention.
상술한 바와 같이 본 발명의 화학기계적연마장치는 워터 트랙의 마지막 부위와 린즈 링부의 앞부분에 웨이퍼를 밀어줄 수 있는 푸셔를 장착하여 로봇이 웨이퍼를 픽업후 스핀너에 정확히 얼라인하여 웨이퍼 파손 또는 에러를 방지할 수 있다.As described above, the chemical mechanical polishing apparatus of the present invention is equipped with a pusher capable of pushing the wafer at the last part of the water track and the front of the rinse ring, so that the robot picks up the wafer and accurately aligns it with the spinner to prevent wafer breakage or error. You can prevent it.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980043880A KR20000026372A (en) | 1998-10-20 | 1998-10-20 | Device for chemical mechanical polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980043880A KR20000026372A (en) | 1998-10-20 | 1998-10-20 | Device for chemical mechanical polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000026372A true KR20000026372A (en) | 2000-05-15 |
Family
ID=19554662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980043880A KR20000026372A (en) | 1998-10-20 | 1998-10-20 | Device for chemical mechanical polishing |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20000026372A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7521405B2 (en) | 2002-08-12 | 2009-04-21 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
-
1998
- 1998-10-20 KR KR1019980043880A patent/KR20000026372A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7521405B2 (en) | 2002-08-12 | 2009-04-21 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
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| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19981020 |
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| PG1501 | Laying open of application | ||
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| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |