KR20000014388A - Ferroelectric memory capacitor and forming method thereof - Google Patents
Ferroelectric memory capacitor and forming method thereof Download PDFInfo
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- KR20000014388A KR20000014388A KR1019980033792A KR19980033792A KR20000014388A KR 20000014388 A KR20000014388 A KR 20000014388A KR 1019980033792 A KR1019980033792 A KR 1019980033792A KR 19980033792 A KR19980033792 A KR 19980033792A KR 20000014388 A KR20000014388 A KR 20000014388A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 34
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910044991 metal oxide Inorganic materials 0.000 claims description 18
- 150000004706 metal oxides Chemical class 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 239000010936 titanium Substances 0.000 claims description 13
- LSYIMYXKHWXNBV-UHFFFAOYSA-N lanthanum(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[La+3].[Ti+4] LSYIMYXKHWXNBV-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910002367 SrTiO Inorganic materials 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 5
- ZSBKSIBHLUBZKB-UHFFFAOYSA-N lanthanum(3+) oxygen(2-) titanium(4+) zirconium(4+) Chemical compound [O-2].[Ti+4].[Zr+4].[La+3] ZSBKSIBHLUBZKB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 claims description 4
- JIBLGKATRGJBSB-UHFFFAOYSA-N bismuth oxygen(2-) titanium(4+) Chemical compound [Bi+3].[O-2].[Ti+4] JIBLGKATRGJBSB-UHFFFAOYSA-N 0.000 claims description 4
- 229910002115 bismuth titanate Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052762 osmium Inorganic materials 0.000 claims description 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910004121 SrRuO Inorganic materials 0.000 claims description 3
- QEQWDEBBDASYQQ-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] Chemical compound [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] QEQWDEBBDASYQQ-UHFFFAOYSA-N 0.000 claims description 3
- XADWNYZEMSAEHZ-UHFFFAOYSA-N [Ru]=O.[Ba].[Sr] Chemical compound [Ru]=O.[Ba].[Sr] XADWNYZEMSAEHZ-UHFFFAOYSA-N 0.000 claims description 3
- WEUCVIBPSSMHJG-UHFFFAOYSA-N calcium titanate Chemical compound [O-2].[O-2].[O-2].[Ca+2].[Ti+4] WEUCVIBPSSMHJG-UHFFFAOYSA-N 0.000 claims description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- PWYYWQHXAPXYMF-UHFFFAOYSA-N strontium(2+) Chemical compound [Sr+2] PWYYWQHXAPXYMF-UHFFFAOYSA-N 0.000 claims description 3
- QSRQPNVTNDINNC-UHFFFAOYSA-N [Ru]=O.[Ca].[Sr] Chemical compound [Ru]=O.[Ca].[Sr] QSRQPNVTNDINNC-UHFFFAOYSA-N 0.000 claims 2
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims 2
- 125000004429 atom Chemical group 0.000 description 16
- 230000010287 polarization Effects 0.000 description 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
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- 238000007254 oxidation reaction Methods 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- OEBXVKWKYKWDDA-UHFFFAOYSA-N [Ta].[Bi].[Sr] Chemical compound [Ta].[Bi].[Sr] OEBXVKWKYKWDDA-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
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- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
본 발명은 강유전체 메모리소자(ferroelectric memory device) 및 그 제조방법에 관한 것으로, 특히 강유전체를 유전막으로 사용하는 커패시터 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ferroelectric memory device and a method of manufacturing the same, and more particularly, to a capacitor using a ferroelectric as a dielectric film and a method of manufacturing the same.
강유전체 RAM(ferroelectric RAM; 이하 "FRAM"이라 한다)은 빠른 동작속도를 보이면서 단일 전원전압으로 읽기동작 및 쓰기동작을 수행할 수 있는 비휘발성 메모리 소자이다.A ferroelectric RAM (hereinafter referred to as "FRAM") is a nonvolatile memory device capable of performing a read operation and a write operation with a single power supply voltage while exhibiting a high operating speed.
FRAM 소자는 단위 셀의 구성요소에 따라 두가지로 분류할 수 있다. 그 하나는 단위 셀이 강유전체막을 게이트 절연막으로 사용하는 하나의 트랜지스터로 구성된 것이고, 다른 하나는 하나의 셀 커패시터 및 하나의 억세스 트랜지스터로 구성된 DRAM 셀과 동일한 구조를 가지면서 셀 커패시터의 유전막이 강유전체막으로 형성된 것이다. 여기서, 전자의 FRAM은 강유전체막을 어닐링시키는 공정을 실시할 때 채널영역인 실리콘기판과 게이트 절연막인 강유전체막 사이의 계면에 실리콘기판과 산소원자가 반응하여 원하지 않는 실리콘 산화막이 형성되는 문제점과, 실리콘기판 및 강유전체막 사이의 격자상수 차이 또는 이들의 열팽창계수 차이에 의하여 우수한 막질을 갖는 강유전체막을 형성하기 어려운 문제점이 있다. 따라서, 최근에 후자의 FRAM, 즉 DRAM 셀과 동일한 구조를 가져서 빠른 동작 속도와 낮은 동작 전압 특성을 지니고, 강유전체의 잔류 분극 특성을 지녀서 비휘발성 특성을 나타내는 셀 커패시터의 유전막을 강유전체막으로 형성하는 FRAM 소자에 대한 연구가 활발해지고 있다.FRAM devices can be classified into two types according to the elements of unit cells. One is a unit cell composed of one transistor using a ferroelectric film as a gate insulating film, and the other has the same structure as a DRAM cell composed of one cell capacitor and one access transistor, while the dielectric film of the cell capacitor is a ferroelectric film. Formed. Here, in the former FRAM, the silicon substrate and oxygen atoms react at the interface between the silicon substrate as the channel region and the ferroelectric film as the gate insulating film to form an unwanted silicon oxide film when the annealing of the ferroelectric film is performed. There is a problem in that it is difficult to form a ferroelectric film having excellent film quality due to the lattice constant difference or the thermal expansion coefficient difference between the ferroelectric films. Therefore, in recent years, a ferroelectric film is used to form a dielectric film of a cell capacitor having the same structure as that of the latter FRAM, i.e., a DRAM cell, having fast operating speed and low operating voltage characteristics, and having non-polarity characteristics with residual polarization characteristics of ferroelectrics. FRAM devices are being actively researched.
강유전체의 분극 특성은 ABO3형의 페로브스카이트 결정 구조를 지닐 때 나타난다. ABO3의 결정 구조는 입방 구조를 지니며, 입방격자의 구석을 1가 또는 2가의 양전하를 띠는 A이온이 차지한다. 그리고, 2가의 음이온을 띠는 6개의 산소이온들이 각각의 면심에 존재하여 만들어지는 8면체의 중심에 4가 또는 5가의 양전하를 띠는 B 원자가 위치한다. B원자는 산소 이온과의 상호 작용에 의하여 위,아래 방향으로 쌍극자를 형성하게 된다. 따라서 전계가 가해지면 전기적 쌍극자들이 전계 방향으로 배열된다. 이러한 분극(polarization) 상태는 전계를 제거하여도 적은 양의 감소(depolarization)만 있을 뿐 잔류 분극(remnant polarization)량을 지니게 되어 데이타의 저장에 이용된다.The polarization characteristics of ferroelectrics appear when they have the ABO 3 type perovskite crystal structure. The crystal structure of ABO 3 has a cubic structure, and the corner of the cubic lattice is occupied by a monovalent or divalent positively charged A ion. In addition, a B atom having a tetravalent or pentavalent positive charge is located at the center of the octahedron, in which six oxygen ions having a divalent anion are present in each face. The B atom forms a dipole in the up and down direction by interaction with oxygen ions. Thus, when an electric field is applied, the electrical dipoles are arranged in the electric field direction. This polarization state has only a small amount of depolarization even when the electric field is removed, and has a residual polarization amount, which is used for storing data.
그런데 강유전체로 유전막을 형성할 경우 전극 물질과의 계면에서 산소 공공(oxygen vacancy)이 발생하는 문제점이 있다. 이러한 산소 공공은 읽기동작 및 쓰기동작의 횟수가 증가할수록 전극 및 강유전체막 사이의 계면에 국부적으로 다량 발생하여 강유전체막의 분극 특성을 저하시킨다. 이와 같이 강유전체막의 분극 특성이 저하되면, 읽기동작 및 쓰기동작시 오동작이 유발된다. 또한, 산소 공공이 국부적으로 발생되면, 강유전체막의 소정영역에 강한 전계가 형성되므로 강유전체막의 파괴전압(breakdown voltage)이 낮아지며 누설전류가 증가하여 강유전체막의 신뢰성이 저하된다. 따라서, 강유전체막의 신뢰성을 개선시키기 위해서는 산소 공공을 감소시켜야 한다.However, when the dielectric film is formed of ferroelectric material, oxygen vacancy occurs at the interface with the electrode material. As the number of read and write operations increases, the oxygen vacancies are locally generated at the interface between the electrode and the ferroelectric film, thereby lowering the polarization characteristics of the ferroelectric film. As such, when the polarization characteristics of the ferroelectric film are degraded, malfunctions are caused during read and write operations. In addition, when oxygen vacancies are locally generated, a strong electric field is formed in a predetermined region of the ferroelectric film, so that the breakdown voltage of the ferroelectric film is lowered and the leakage current increases, thereby reducing the reliability of the ferroelectric film. Therefore, in order to improve the reliability of the ferroelectric film, oxygen vacancies must be reduced.
산소 공공에 따른 특성 저하를 방지하기 위한 방법으로는 강유전체막을 형성할 때, 란탄(La)등을 함께 도핑하는 방법이 알려져 있다. 그러나 강유전체막을 형성할 때, 란탄 소오스 가스를 함께 사용하여 도핑하므로, 강유전체막과 전극간의 계면에만 란탄 원자가 분포하는 것이 아니라 강유전체막 전체에 란탄 원자가 분포하게된다. 따라서, 본래의 강유전체막보다 강유전성 및 유전율을 저하시키는 문제점이 있다.As a method for preventing the deterioration of characteristics due to oxygen vacancies, a method of doping lanthanum (La) and the like together when forming a ferroelectric film is known. However, when the ferroelectric film is formed, the lanthanum source gas is used together and doped, so that the lanthanum atoms are distributed not only at the interface between the ferroelectric film and the electrode but also throughout the ferroelectric film. Therefore, there is a problem of lowering the ferroelectricity and the dielectric constant than the original ferroelectric film.
본 발명이 이루고자하는 기술적 과제는 강유전체막의 산소 공공을 해결하기 위한 것으로, 강유전체막의 하부 또는 상부에 산소 공공에 따라 감소된 음전하를 보상할 수 있는 원자를 포함하는 도핑용 막을 구비하여 특성이 향상된 강유전체 메모리 커패시터를 제공하는 것이다.The technical problem to be achieved by the present invention is to solve the oxygen vacancies in the ferroelectric film, the ferroelectric memory with improved characteristics by having a doping film containing atoms that can compensate for negative charges reduced by the oxygen vacancies in the lower or upper portion of the ferroelectric film To provide a capacitor.
본 발명이 이루고자하는 다른 기술적 과제는 상기 강유전체 메모리 커패시터를 제조하는 방법을 제공하는 데 있다.Another object of the present invention is to provide a method of manufacturing the ferroelectric memory capacitor.
도 1 내지 도 3은 본 발명의 일 실시예에 의한 커패시터 제조방법 및 그 방법에 의해 제조된 커패시터를 설명하기 위한 단면도들이다.1 to 3 are cross-sectional views illustrating a capacitor manufacturing method and a capacitor manufactured by the method according to an embodiment of the present invention.
도 4는 본 발명에 따라 제조된 란탄 티타늄 산화막(LaTiO3)으로 이루어진 도핑용막을 구비하는 커패시터와 종래의 기술에 따라 도핑용막 없이 제조된 커패시터의 누설 전류를 측정한 결과를 나타내는 그래프이다.Figure 4 is a graph showing the results of measuring the leakage current of a capacitor having a doping film made of a lanthanum titanium oxide film (LaTiO 3 ) prepared in accordance with the present invention and a doped film according to the prior art.
상기 기술적 과제를 이루기 위하여 본 발명의 일 태양(aspect)에 따른 강유전체 메모리 커패시터는 강유전체막의 하부 및/또는 상부에 강유전체막내에서 발생하는 산소 공공에 따른 음전하 손실을 보상할 수 있는 원자를 포함하는 도핑용막 을 구비한다.In order to achieve the above technical problem, a ferroelectric memory capacitor according to an aspect of the present invention includes a doping film including atoms capable of compensating negative charge loss due to oxygen vacancies generated in the ferroelectric film in the lower and / or upper portion of the ferroelectric film. It is provided.
상기 다른 기술적 과제를 달성하기 위한 본 발명의 일 태양에 따른 강유전체 메모리 커패시터의 제조 방법에 따르면, 커패시터의 하부 전극을 형성한 후, 하부 전극상에 강유전체막을 형성하기 전에, 강유전체막내에서 발생하는 산소 공공에 따른 음전하 손실을 보상할 수 있는 원자를 포함하는 제1도핑용막을 상기 하부 전극상에 형성한다. 다음에 제1도핑용막상에 강유전체막을 형성한 후, 열처리하여 강유전체막을 결정화시키고 제1도핑용 막내의 원자를 강유전체막내로 도핑한다.According to a method of manufacturing a ferroelectric memory capacitor according to an aspect of the present invention for achieving the above another technical problem, after forming the lower electrode of the capacitor, before forming the ferroelectric film on the lower electrode, oxygen vacancies generated in the ferroelectric film A first doping film containing an atom capable of compensating negative charge loss due to the present invention is formed on the lower electrode. Next, after the ferroelectric film is formed on the first doping film, heat treatment is performed to crystallize the ferroelectric film, and the atoms in the first doping film are doped into the ferroelectric film.
열처리 단계전에, 강유전체막상에 강유전체막내에서 발생하는 산소 공공에 따른 음전하 손실을 보상할 수 있는 원자를 포함하는 제2도핑용막을 강유전체막상에 더 형성하는 것이 바람직하다.Prior to the heat treatment step, it is preferable to further form on the ferroelectric film a second doping film containing atoms capable of compensating negative charge loss due to oxygen vacancies generated in the ferroelectric film.
본 발명의 또 다른 태양에 따르면, 강유전체막의 상부에만 강유전체막내에서 발생하는 산소 공공에 따른 음전하 손실을 보상할 수 있는 원자를 포함하는 도핑용막을 형성할 수도 있다.According to another aspect of the present invention, a doping film including an atom capable of compensating negative charge loss due to oxygen vacancies generated in the ferroelectric film may be formed only on the ferroelectric film.
본 발명에 있어서, 하부 전극 및 상부 전극은 각각 내산화성 금속막, 도전성 금속 산화물막 및 내산화성 금속막과 도전성 금속 산화물막의 복합막으로 이루어진 그룹에서 선택된 어느 하나를 사용하여 형성한다.In the present invention, the lower electrode and the upper electrode are formed using any one selected from the group consisting of a resistive metal film, a conductive metal oxide film, and a composite film of the resistive metal film and the conductive metal oxide film, respectively.
그리고 제1도핑용막 및 제2도핑용막은 란탄 티타늄 산화막(LaTiO3), 바륨 티타늄 산화막(BaTiO3), 칼슘 티타늄 산화막(CaTiO3), 스트론튬 티타늄 산화막(SrTiO3)및 이들의 복합막으로 이루어진 그룹에서 선택된 어느 하나를 사용하여 형성한다.And first doped yongmak and second doped film lanthanum titanium oxide (LaTiO 3), barium titanium oxide (BaTiO 3), calcium titanium oxide (CaTiO 3), strontium titanium oxide (SrTiO 3), and a group consisting of a composite film for Form using any one selected from.
강유전체막은 스트론튬 티타늄 산화막(SrTiO3), 바륨 티타늄 산화막(BaTiO3), 바륨 스트론튬 티타늄 산화막((Ba, Sr)TiO3), 납 지르코늄 티타늄 산화막(Pb(Zr, Ti)03), 스트론튬 비스무트 탄탈륨 산화막(SrBi2Ta2O9), 납 란탄 지르코늄 티타늄 산화막((Pb, La)(Zr, Ti)O3)및 비스무트 티타늄 산화막(Bi4Ti3O12)으로 이루어진 그룹에서 선택된 어느 하나를 사용하여 형성한다.Ferroelectric films include strontium titanium oxide film (SrTiO 3 ), barium titanium oxide film (BaTiO 3 ), barium strontium titanium oxide film ((Ba, Sr) TiO 3 ), lead zirconium titanium oxide film (Pb (Zr, Ti) 0 3 ), strontium bismuth tantalum Any one selected from the group consisting of an oxide film (SrBi 2 Ta 2 O 9 ), a lead lanthanum zirconium titanium oxide film ((Pb, La) (Zr, Ti) O 3 ) and a bismuth titanium oxide film (Bi 4 Ti 3 O 12 ) To form.
본 발명에 의하면, 강유전체막의 하부 및/또는 상부에 각각 산소 공공에 따른 음전하의 감소를 보상할 수 있는 원자를 포함하는 도핑용 막을 구비함으로써 강유전체막의 특성은 그대로 유지하면서 산소공공을 효과적으로 감소시킬 수 있다.According to the present invention, the oxygen pores can be effectively reduced while maintaining the properties of the ferroelectric film by providing a doping film including atoms capable of compensating for the reduction of negative charge due to oxygen vacancies, respectively, in the lower and / or upper portions of the ferroelectric film. .
이하, 첨부한 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1 내지 도 3은 본 발명의 일 실시예에 의한 커패시터 제조방법 및 그 방법에 의해 제조된 커패시터를 설명하기 위한 단면도들이다.1 to 3 are cross-sectional views illustrating a capacitor manufacturing method and a capacitor manufactured by the method according to an embodiment of the present invention.
도 1을 참조하면, 반도체기판(100) 상에 게이트절연막(102), 게이트전극(104), 소오스 영역(106) 및 드레인 영역(107)을 구비하는 트랜지스터를 통상의 방법을 사용하여 형성한다. 이어서, 결과물 전면에 PSG, BPSG, TEOS 및 USG 중에서 선택된 어느 하나의 절연물질을 증착한 다음 평탄화하여 층간절연막(108)을 형성한다.Referring to FIG. 1, a transistor including a gate insulating film 102, a gate electrode 104, a source region 106, and a drain region 107 is formed on a semiconductor substrate 100 using a conventional method. Subsequently, an insulating material selected from PSG, BPSG, TEOS, and USG is deposited on the entire surface of the resultant and then planarized to form the interlayer insulating film 108.
이어서, 상기 층간절연막을 패터닝하여 소오스 영역(106)을 노출시키는 콘택홀을 형성한다. 다음에, 상기 콘택홀이 형성된 결과물 전면에 콘택홀을 채우는 도전막, 예컨대 불순물로 도우핑된 실리콘막(Si), 텅스텐막(W), 탄탈륨막(Ta), 루테늄막(Ru), 이리듐막(Ir), 오스뮴막(Os), 텅스텐 실리사이드막(WSi), 텅스텐 나이트라이드막(WN) 또는 이들의 조합막을 형성하고 이를 에치백(etch-back)하여 상기 콘택홀 내부에 소오스 영역(106)과 접촉하는 플러그(110)을 형성한다. 이 때, 플러그 (110)는 콘택홀 내부에만 선택적으로 도전막을 형성하는 선택적 증착(selective deposition)방법으로 형성할 수도 있다.Subsequently, the interlayer insulating layer is patterned to form a contact hole exposing the source region 106. Next, a conductive film filling the contact hole on the entire surface of the product in which the contact hole is formed, such as a silicon film Si, a tungsten film W, a tantalum film Ta, a ruthenium film Ru, and an iridium film doped with impurities (Ir), an osmium film (Os), a tungsten silicide film (WSi), a tungsten nitride film (WN), or a combination thereof, and then etched back to form a source region 106 in the contact hole. And a plug 110 in contact with it. In this case, the plug 110 may be formed by a selective deposition method in which a conductive film is selectively formed only inside the contact hole.
다음에 도전성 플러그(110)가 형성된 결과물 상에 커패시터의 하부전극을 형성하기 위한 물질을 증착한 후, 통상의 사진식각 공정을 사용하여 패터닝함으로써 커패시터의 하부전극(112)을 형성한다. 이 때, 커패시터의 하부 전극(112)은 내산화성 금속막, 도전성 금속 산화물막 또는 내산화성 금속막과 도전성 금속 산화물막의 복합막을 사용하여 형성한다. 내산화성 금속막으로는 백금막(Pt), 이리듐막(Ir) 및 루테늄막(Ru), 로듐막(Rh), 오스뮴막(Os) 및 팔라듐막(Pd)으로 이루어진 그룹에서 선택된 어느 하나가 사용되고, 도전성 금속 산화물막으로는 루테늄 산화막(RuO2), 이리듐 산화막(IrO2), 스트론튬 루테늄 산화막(SrRuO3), 칼슘 스트론튬 루테늄 산화막(CaSrRuO3) 및 바륨 스트론튬 루테늄 산화막(BaSrRuO3)으로 이루어진 그룹에서 선택된 어느 하나가 사용될 수 있다.Next, a material for forming the lower electrode of the capacitor is deposited on the resultant on which the conductive plug 110 is formed, and then patterned using a conventional photolithography process to form the lower electrode 112 of the capacitor. At this time, the lower electrode 112 of the capacitor is formed by using a oxidation resistant metal film, a conductive metal oxide film, or a composite film of the oxidation resistant metal film and the conductive metal oxide film. As the oxidation resistant metal film, any one selected from the group consisting of platinum film (Pt), iridium film (Ir) and ruthenium film (Ru), rhodium film (Rh), osmium film (Os) and palladium film (Pd) is used. , a conductive metal oxide film of ruthenium oxide (RuO 2), iridium oxide (IrO 2), strontium ruthenium oxide (SrRuO 3), from the group consisting of calcium, strontium ruthenium oxide (CaSrRuO 3) and barium strontium ruthenium oxide (BaSrRuO 3) Any one selected may be used.
도 2를 참조하면, 하부 전극(112)이 형성된 결과물상에 제1도핑용막(114), 강유전체막(116) 및 제2도핑용막(118)을 차례대로 형성한다.Referring to FIG. 2, the first doping film 114, the ferroelectric film 116, and the second doping film 118 are sequentially formed on the resultant product on which the lower electrode 112 is formed.
제1도핑용막(114) 및 제2도핑용막(118)은 강유전체막(116)내에서 발생하는 산소 공공에 따른 음전하 손실을 보상할 수 있는 원자를 포함하는 막을 사용하여 형성한다. 따라서, 란탄 티타늄 산화막(LaTiO3), 바륨 티타늄 산화막(BaTiO3), 칼슘 티타늄 산화막(CaTiO3), 스트론튬 티타늄 산화막(SrTiO3)및 이들의 복합막을 사용하여 제1도핑용막(114) 및 제2도핑용막(118)을 형성한다. 제1 및 제2도핑용막(114, 118)내의 란탄(La1+), 바륨(Ba2+), 칼슘(Ca2+) 또는 스트론튬(Sr2+) 등이 산소 공공에 따른 음전하 손실을 보상할 수 있는 원자로 작용한다.The first doping film 114 and the second doping film 118 are formed using a film containing atoms capable of compensating negative charge loss due to oxygen vacancies generated in the ferroelectric film 116. Thus, lanthanum titanium oxide (LaTiO 3), barium titanium oxide (BaTiO 3), calcium titanium oxide (CaTiO 3), strontium titanium oxide (SrTiO 3), and using these composite membrane first doping yongmak 114 and the second The doping film 118 is formed. Lanthanum (La 1+ ), barium (Ba 2+ ), calcium (Ca 2+ ), or strontium (Sr 2+ ) in the first and second doping films 114 and 118 compensate for negative charge loss due to oxygen vacancies. Act as an atom to do
제1도핑막(114) 및 제2도핑막(118)은 원자층 증착 방법(atomic layer deposition), 스퍼터링 방법, 금속 유기 화학 기상 증착(MOCVD)법 또는 졸-겔(sol-gel)방법을 이용하여 형성할 수 있다.The first doped film 114 and the second doped film 118 use an atomic layer deposition method, a sputtering method, a metal organic chemical vapor deposition (MOCVD) method, or a sol-gel method. Can be formed.
제1도핑막(114) 및 제2도핑막(118)은 강유전체막(116) 전체를 도핑시키는 것이 아니라 계면부위에서만 도핑시키고자 하는 것이므로, 가능한한 얇게 형성한다.Since the first doped film 114 and the second doped film 118 do not dop the entire ferroelectric film 116 but only at the interface, they are formed as thin as possible.
강유전체막(116)은 스트론튬 티타늄 산화막(SrTiO3), 바륨 티타늄 산화막(BaTiO3), 바륨 스트론튬 티타늄 산화막((Ba, Sr)TiO3), 납 지르코늄 티타늄 산화막(Pb(Zr, Ti)03), 스트론튬 비스무트 탄탈륨 산화막(SrBi2Ta2O9), 납 란탄 지르코늄 티타늄 산화막((Pb, La)(Zr, Ti)O3)및 비스무트 티타늄 산화막(Bi4Ti3O12)으로 이루어진 그룹에서 선택된 어느 하나를 사용하여 형성한다.The ferroelectric film 116 includes a strontium titanium oxide film (SrTiO 3 ), a barium titanium oxide film (BaTiO 3 ), a barium strontium titanium oxide film ((Ba, Sr) TiO 3 ), and a lead zirconium titanium oxide film (Pb (Zr, Ti) 0 3 ) , Strontium bismuth tantalum oxide film (SrBi 2 Ta 2 O 9 ), lead lanthanum zirconium titanium oxide film ((Pb, La) (Zr, Ti) O 3 ) and bismuth titanium oxide film (Bi 4 Ti 3 O 12 ) Form using either.
강유전체막(116) 또한 스퍼터링 방법, 금속 유기 화학 기상 증착방법 또는 졸-겔(sol-gel)방법으로 형성한다.The ferroelectric film 116 is also formed by a sputtering method, a metal organic chemical vapor deposition method, or a sol-gel method.
제2도핑용막(118)까지 형성한 후에 결과물 전면을 열처리하여 강유전체막(116)의 페로브스카이트 구조를 결정화시킴과 동시에 안정화시킨다. 열처리는 700 내지 750℃의 온도로 산소 분위기에서 실시한다.After forming the second doping film 118, the entire surface of the resultant is heat-treated to crystallize and stabilize the perovskite structure of the ferroelectric film 116. The heat treatment is carried out in an oxygen atmosphere at a temperature of 700 to 750 ° C.
열처리에 의해 제1도핑용막(114)과 제2도핑용막(118)내에 포함되어 있으며, 강유전체막의 산소 공공에 따른 음전하의 손실을 보상할 수 있는 원자들이 ABO3구조의 강유전체막(116)내의 A 원자 또는 B원자 자리에 대신 결합하여 강유전체막(116)을 안정화시킨다. 따라서, 강유전체막(116)의 피로 특성, 보유 특성이 향상되고 누설 전류가 감소한다. 또, 도핑이 강유전체막(116)전체에 걸쳐 이루어지는 것이 아니라 강유전체막(116)의 상, 하 표면에서만 일어나므로, 강유전체막(116)의 분극 특성 및 고유전율을 계속 유지할 수 있다.Atoms contained in the first doping film 114 and the second doping film 118 by heat treatment, and capable of compensating the loss of negative charges due to oxygen vacancies in the ferroelectric film, have A atoms in the ferroelectric film 116 of the ABO 3 structure. The ferroelectric film 116 is stabilized by binding to the atom or B atom site instead. Therefore, the fatigue characteristics and the retention characteristics of the ferroelectric film 116 are improved, and the leakage current is reduced. In addition, since doping does not occur over the entire ferroelectric film 116 but only on the upper and lower surfaces of the ferroelectric film 116, the polarization characteristics and the high dielectric constant of the ferroelectric film 116 can be maintained.
강유전체막(116)으로 PZT막을 형성하고, 제1 및 제2도핑용막(114, 118)으로 란탄 티타늄 산화막(LaTiO3)을 형성한 경우를 예로 들어, 제1 및 제2도핑용막(114, 118)의 작용을 좀 더 자세히 설명한다.For example, a PZT film is formed of the ferroelectric film 116 and a lanthanum titanium oxide film (LaTiO 3 ) is formed of the first and second doping films 114 and 118. ) In more detail.
PZT 강유전체막(116)내에 산소 공공이 발생하면 산소의 손실로 인해 음전하가 감소하여, PZT 강유전체막(116)의 전체 전하는 양의 값을 나타낸다. 따라서, PZT 강유전체막(116)의 상부 또는 하부에 란탄 티타늄 산화막으로 구성된 도핑용막(114, 118)을 형성한 후 열처리하면, 도핑용막(114, 118)을 구성하며 1가의 양전하를 띠는 La+1이 2가의 양전하를 띠는 Pb2+자리에 대신 결합한다. 즉, PZT 강유전체막(116)에서 산소 공공이 발생하면서 감소한 음전하의 양만큼 양전하도 감소하여 결과적으로 PZT 강유전체막(116)의 전체 전하를 0이 되도록 한다. 따라서 PZT 강유전체막(116)의 피로 특성, 보유 특성이 향상되고 누설 전류는 감소한다. 또, PZT 강유전체막(116)의 표면에서만 La+1의 치환 반응이 일어나므로 막 전체는 PZT막의 상태를 그대로 유지하므로 높은 분극 특성 및 유전율을 보유하게 된다.When oxygen vacancies are generated in the PZT ferroelectric film 116, negative charges decrease due to the loss of oxygen, and the total charge of the PZT ferroelectric film 116 represents a positive value. Therefore, when the heat treatment after forming the doped yongmak 114 and 118 on the upper or lower portion consisting of a lanthanum-titanium oxide film of the PZT ferroelectric film 116, constituting the doping yongmak (114, 118) and band a monovalent positive electric charge is La + 1 instead binds to the bivalently charged Pb 2+ site. That is, the positive charge is also reduced by the amount of negative charge which decreases as oxygen vacancies are generated in the PZT ferroelectric film 116, resulting in the total charge of the PZT ferroelectric film 116 being zero. Therefore, the fatigue characteristics and the retention characteristics of the PZT ferroelectric film 116 are improved, and the leakage current is reduced. In addition, since the substitution reaction of La + 1 occurs only on the surface of the PZT ferroelectric film 116, the entire film maintains the state of the PZT film as it is, and thus has high polarization characteristics and dielectric constant.
도 3을 참조하면, 제2도핑용막(118)상에 상부 전극용 도전막을 형성한 후, 통상의 사진식각 공정을 통해 상부 전극(118), 제2도핑용막(118), 강유전체막(116) 및 제1도핑용막(114)을 셀 단위로 패터닝하여 커패시터 셀 유니트를 완성한다.Referring to FIG. 3, after forming an upper electrode conductive film on the second doping film 118, the upper electrode 118, the second doping film 118, and the ferroelectric film 116 through a conventional photolithography process. And the first doping film 114 is patterned on a cell basis to complete the capacitor cell unit.
본 실시예에서는 강유전체막(116)의 상, 하부에 모두 도핑용막을 형성하였으나, 도핑용막은 필요에 따라 하부 전극(112)과 강유전체막(116)의 계면에만 또는 강유전체막(116)과 상부 전극(120)의 계면에만 형성할 수도 있다. 하부 전극(112)과 강유전체막(116)의 계면에만 도핑용막을 형성한 경우에는 강유전체막(116)을 형성한 직후, 열처리를 실시해야 함은 물론이다.In the present embodiment, the doping film is formed on both the upper and lower portions of the ferroelectric film 116. However, the doping film is formed only at the interface between the lower electrode 112 and the ferroelectric film 116 or the ferroelectric film 116 and the upper electrode as necessary. It may be formed only at the interface of 120. When the doping film is formed only at the interface between the lower electrode 112 and the ferroelectric film 116, the heat treatment should be performed immediately after the ferroelectric film 116 is formed.
본 발명은 하기의 실험예를 참고로 더욱 상세히 설명되며, 이 실험예가 본 발명을 제한하려는 것은 아니다.The present invention is described in more detail with reference to the following experimental examples, which are not intended to limit the present invention.
<실험예>Experimental Example
4mTorr 압력, 400℃ 온도하에서 아르곤 플라즈마를 사용한 스퍼터링 방법을 사용하여 하부 전극으로 사용될 백금막을 반도체 기판상에 형성하였다. 다음에 백금막상에 란탄 티타늄 산화막을 원자층 증착 방법을 사용하여 10Å 두께로 형성하였다. 이어서, 란탄 티타늄 산화막 위에 PZT막을 졸-겔 방법으로 형성한 후, 다시 10Å 두께의 란탄 티타늄 산화막을 형성하였다. 다음에, PZT막을 안정화시키고, 란탄 티타늄 산화막의 란탄 원자를 PZT막내로 도핑시키기 위하여 700 내지 750℃의 온도, 산소 분위기하에서 30분간 열처리하였다. 열처리된 결과물상에 상부 전극으로 백금막을 형성하였다. 이렇게 얻어진 시료에 대하여 누설 전류를 측정하였다. 그 결과를 도 4의 1번 그래프로 도시하였다.A platinum film to be used as the lower electrode was formed on the semiconductor substrate by using a sputtering method using argon plasma under a 4 mTorr pressure and 400 ° C. temperature. Next, a lanthanum titanium oxide film was formed on the platinum film to a thickness of 10 Å using an atomic layer deposition method. Subsequently, a PZT film was formed on the lanthanum titanium oxide film by a sol-gel method, and then a lanthanum titanium oxide film having a thickness of 10 Å was formed. Next, the PZT film was stabilized and heat-treated for 30 minutes under an oxygen atmosphere at a temperature of 700 to 750 ° C. to dope the lanthanum atoms of the lanthanum titanium oxide film into the PZT film. A platinum film was formed on the heat-treated result as the upper electrode. The leakage current was measured about the sample thus obtained. The results are shown in graph 1 of FIG.
본 발명의 결과와 비교하기 위한 대조군으로서 종래의 방법에 따라 백금막-PZT막-백금막으로 이루어진 커패시터를 형성하고 이에 대해서도 누설 전류를 측정하였다. 그 결과 또한 도 4에 2번 그래프로 도시하였다.As a control for comparison with the results of the present invention, a capacitor consisting of a platinum film-PZT film-platinum film was formed according to a conventional method, and leakage current was also measured. The results are also shown in graph 2 in FIG. 4.
도 4의 결과로부터, 본 발명에 따라 PZT막의 상, 하 표면에만 란탄 원자가 도핑되어 납 란탄 지르코늄 티타늄 산화막((Pb, La)(Zr, Ti)O3)이 PZT막의 상,하 표면에만 형성된 경우, 누설 전류가 훨씬 감소하였음을 알 수 있었다.From the results of FIG. 4, when lanthanum atoms are doped only on the upper and lower surfaces of the PZT film according to the present invention, lead lanthanum zirconium titanium oxide films ((Pb, La) (Zr, Ti) O 3 ) are formed only on the upper and lower surfaces of the PZT film. As a result, leakage current was much reduced.
본 발명에 따르면, 강유전체 메모리 커패시터는 강유전체막의 하부 및/또는 상부에 각각 강유전체막의 산소 공공에 따른 음전하의 감소를 보상할 수 있는 원자를 포함하는 도핑용 막을 구비함으로써 강유전체막과 전극 사이의 계면에 생성되는 산소공공을 효과적으로 감소시킬 수 있다. 따라서 강유전체막의 특성은 그대로 유지하면서, 산소 공공의 문제를 해결하여 신뢰성이 우수한 FRAM 소자를 구현할 수 있다.According to the present invention, a ferroelectric memory capacitor is formed at an interface between a ferroelectric film and an electrode by having a doping film including atoms capable of compensating for the reduction of negative charges due to oxygen vacancies in the ferroelectric film, respectively, in the lower and / or upper portion of the ferroelectric film. Effectively reducing the oxygen vacancies. Therefore, while maintaining the characteristics of the ferroelectric film, it is possible to solve the problem of oxygen vacancies to implement a FRAM device having excellent reliability.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030039893A (en) * | 2001-11-16 | 2003-05-22 | 주식회사 하이닉스반도체 | Capacitor in semiconductor device and the method for fabricating thereof |
| KR100388466B1 (en) * | 2001-06-30 | 2003-06-25 | 주식회사 하이닉스반도체 | Ferroelectric capacitor having ruthenium bottom electrode and forming method thereof |
| KR100388465B1 (en) * | 2001-06-30 | 2003-06-25 | 주식회사 하이닉스반도체 | Ferroelectric capacitor having ruthenium bottom electrode and forming method thereof |
| KR100421506B1 (en) * | 2001-01-11 | 2004-03-09 | 후지쯔 가부시끼가이샤 | Semiconductor device and method for fabricating the same |
| KR100444305B1 (en) * | 2001-12-26 | 2004-08-16 | 주식회사 하이닉스반도체 | A method for forming a capacitor of a semiconductor device |
| US6943076B2 (en) | 2001-01-16 | 2005-09-13 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
| KR100533972B1 (en) * | 2003-06-30 | 2005-12-07 | 주식회사 하이닉스반도체 | Capacitor with dielectric of lathanum oxide and method of fabricating the same |
| KR100748727B1 (en) * | 2004-02-27 | 2007-08-13 | 캐논 가부시끼가이샤 | Dielectric element, piezoelectric element, ink jet head and ink jet recording apparatus and manufacturing method of same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0338008A (en) * | 1989-07-05 | 1991-02-19 | Mitsui Petrochem Ind Ltd | Thin-film capacitor and manufacture thereof |
| JPH04206870A (en) * | 1990-11-30 | 1992-07-28 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPH0982907A (en) * | 1995-09-08 | 1997-03-28 | Toshiba Corp | Semiconductor device and its manufacture |
| JPH09191087A (en) * | 1996-01-12 | 1997-07-22 | Nec Corp | Thin film capacitor and its manufacture |
| KR980006396A (en) * | 1996-06-27 | 1998-03-30 | 김영환 | Capacitor Manufacturing Method of Semiconductor Device |
| KR19980034205A (en) * | 1996-11-05 | 1998-08-05 | 김광호 | Ferroelectric capacitor of semiconductor device and manufacturing method thereof |
-
1998
- 1998-08-20 KR KR1019980033792A patent/KR20000014388A/en not_active Application Discontinuation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0338008A (en) * | 1989-07-05 | 1991-02-19 | Mitsui Petrochem Ind Ltd | Thin-film capacitor and manufacture thereof |
| JPH04206870A (en) * | 1990-11-30 | 1992-07-28 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPH0982907A (en) * | 1995-09-08 | 1997-03-28 | Toshiba Corp | Semiconductor device and its manufacture |
| JPH09191087A (en) * | 1996-01-12 | 1997-07-22 | Nec Corp | Thin film capacitor and its manufacture |
| KR980006396A (en) * | 1996-06-27 | 1998-03-30 | 김영환 | Capacitor Manufacturing Method of Semiconductor Device |
| KR19980034205A (en) * | 1996-11-05 | 1998-08-05 | 김광호 | Ferroelectric capacitor of semiconductor device and manufacturing method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100421506B1 (en) * | 2001-01-11 | 2004-03-09 | 후지쯔 가부시끼가이샤 | Semiconductor device and method for fabricating the same |
| US6943076B2 (en) | 2001-01-16 | 2005-09-13 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
| KR100618098B1 (en) * | 2001-01-16 | 2006-08-30 | 가부시키가이샤 히타치세이사쿠쇼 | Semiconductor device and manufacturing method of the same |
| KR100388466B1 (en) * | 2001-06-30 | 2003-06-25 | 주식회사 하이닉스반도체 | Ferroelectric capacitor having ruthenium bottom electrode and forming method thereof |
| KR100388465B1 (en) * | 2001-06-30 | 2003-06-25 | 주식회사 하이닉스반도체 | Ferroelectric capacitor having ruthenium bottom electrode and forming method thereof |
| KR20030039893A (en) * | 2001-11-16 | 2003-05-22 | 주식회사 하이닉스반도체 | Capacitor in semiconductor device and the method for fabricating thereof |
| KR100444305B1 (en) * | 2001-12-26 | 2004-08-16 | 주식회사 하이닉스반도체 | A method for forming a capacitor of a semiconductor device |
| KR100533972B1 (en) * | 2003-06-30 | 2005-12-07 | 주식회사 하이닉스반도체 | Capacitor with dielectric of lathanum oxide and method of fabricating the same |
| KR100748727B1 (en) * | 2004-02-27 | 2007-08-13 | 캐논 가부시끼가이샤 | Dielectric element, piezoelectric element, ink jet head and ink jet recording apparatus and manufacturing method of same |
| US7453188B2 (en) | 2004-02-27 | 2008-11-18 | Canon Kabushiki Kaisha | Dielectric element, piezoelectric element, ink jet head and ink jet recording apparatus and manufacturing method of same |
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