KR102669275B1 - Lighting-emitting device package - Google Patents

Abstract

The light emitting device package includes a substrate, a plurality of first electrode pads disposed adjacent to the substrate, a plurality of light emitting devices disposed on the first electrode pad, and a plurality of second electrode pads disposed apart from the first electrode pad. It includes an electrode pad and a plurality of third electrode pads arranged to be spaced apart from the first electrode pad and the second electrode pad.
Among the plurality of first electrode pads, the 1-1 electrode pad may have the largest area, and among the plurality of first electrode pads, the 1-2 electrode pad may have the thickest thickness.
Among the plurality of light emitting devices, the thickness of the second light emitting device disposed on the 1-2 electrode pad may be smaller than the thickness of the first light emitting device disposed on the 1-1 electrode pad.

Description

Light-emitting device package {Lighting-emitting device package}

The embodiment relates to a light emitting device package.

Semiconductor light emitting devices such as light emitting diodes (LEDs) can form light emitting sources using compound semiconductor materials such as GaAs series, AlGaAs series, GaN series, InGaN series, and InGaAlP series.

These semiconductor light-emitting devices are packaged and used as semiconductor light-emitting device packages that emit various colors, and semiconductor light-emitting device packages are used as light sources in various fields such as color indicators, text displays, and video displays.

Recently, many attempts are being made to apply light emitting device packages to sterilization or plant growth.

The embodiments aim to solve the above-described problems and other problems.

Another object of the embodiment is to provide a light emitting device package having a new structure.

Another object of the embodiment is to provide a light emitting device package optimized for plant growth.

Another object of the embodiment is to provide a light emitting device package that can perform chlorophyll production and photosynthesis of plants separately or simultaneously.

Or to achieve another purpose, according to one aspect of the embodiment, a light emitting device package includes: a substrate; a plurality of first electrode pads disposed adjacent to each other on the substrate; a plurality of light emitting elements disposed on the first electrode pad; a plurality of second electrode pads spaced apart from the first electrode pad; and a plurality of third electrode pads disposed to be spaced apart from the first electrode pad and the second electrode pad.

Among the plurality of first electrode pads, the 1-1 electrode pad may have the largest area, and among the plurality of first electrode pads, the 1-2 electrode pad may have the thickest thickness.

Among the plurality of light emitting devices, the thickness of the second light emitting device disposed on the 1-2 electrode pad may be smaller than the thickness of the first light emitting device disposed on the 1-1 electrode pad.

The effect of the light emitting device package according to the embodiment will be described as follows.

According to at least one of the embodiments, the layout of the second and third electrode pads electrically connected to the plurality of light emitting devices can be optimized by varying the area of the first electrode pad on which the plurality of light emitting devices are mounted. There is an advantage to having it.

According to at least one of the embodiments, there is an advantage in that a decrease in heat dissipation performance can be prevented by increasing the volume of the first electrode by increasing the thickness of the first electrode pad with the smallest area.

According to at least one of the embodiments, the thickness difference of the first electrode pad on which the plurality of light-emitting devices are mounted is compensated for by the thickness difference between the different light-emitting devices by varying the types of the plurality of light-emitting devices, so that all of the plurality of light-emitting devices Optimal plant growth control is possible by ensuring that the light emitting surfaces of the light emitting surfaces are equally positioned so that a uniform luminous flux is transmitted to the target.

Additional scope of applicability of the embodiments will become apparent from the detailed description that follows. However, since various changes and modifications within the spirit and scope of the embodiments may be clearly understood by those skilled in the art, the detailed description and specific embodiments, such as preferred embodiments, should be understood as being given by way of example only.

Figure 1 is a perspective view showing a light emitting device package according to an embodiment.
Figure 2 is a plan view after the optical lens is removed from the light emitting device package according to the embodiment.
Figure 3 is a rear view showing a light emitting device package according to an embodiment.
Figure 4 is a plan view showing the layout of electrode pads in a light emitting device package according to an embodiment.
FIG. 5 is a cross-sectional view taken along line A-A' of the light emitting device package of FIG. 1.
Figure 6 is a cross-sectional view showing a first vertical light-emitting device in a light-emitting device package according to an embodiment.
Figure 7 is a cross-sectional view showing a second vertical light-emitting device in a light-emitting device package according to an embodiment.
Figure 8 is an equivalent circuit diagram of a light emitting device package according to an embodiment.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical idea of the present invention is not limited to some of the described embodiments, but may be implemented in various different forms, and as long as it is within the scope of the technical idea of the present invention, one or more of the components may be optionally used between the embodiments. It can be used by combining and replacing. In addition, terms (including technical and scientific terms) used in the embodiments of the present invention, unless explicitly specifically defined and described, are generally understood by those skilled in the art to which the present invention pertains. It can be interpreted as meaning, and the meaning of commonly used terms, such as terms defined in a dictionary, can be interpreted by considering the contextual meaning of the related technology. Additionally, the terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention. In this specification, the singular can also include the plural unless specifically stated in the phrase, and when described as “at least one (or more than one) of B and C”, it can be combined with A, B, and C. It may contain one or more of all possible combinations. Additionally, when describing the components of an embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the component from other components, and are not limited to the essence, order, or order of the component. And, when a component is described as being 'connected', 'coupled' or 'connected' to another component, the component is not only directly connected, combined or connected to the other component, but also is connected to the other component. It may also include cases where other components are 'connected', 'coupled', or 'connected' by another component between them. In addition, when described as being formed or disposed "on top or bottom" of each component, top or bottom refers not only to cases where two components are in direct contact with each other, but also to one or more components. This also includes cases where another component described above is formed or placed between two components. In addition, when expressed as “up (above) or down (down),” it can include not only the upward direction but also the downward direction based on one component.

FIG. 1 is a perspective view showing a light-emitting device package according to an embodiment, and FIG. 2 is a plan view after the optical lens is removed from the light-emitting device package according to the embodiment. FIG. 3 is a rear view showing a light-emitting device package according to an embodiment, FIG. 4 is a plan view showing the layout of electrode pads in the light-emitting device package according to an embodiment, and FIG. 5 is A- in the light-emitting device package of FIG. This is a cross-sectional view cut along line A'.

Referring to FIGS. 1 to 5, the light emitting device package according to the embodiment may provide a substrate 11.

<Substrate>

The light emitting device package according to the embodiment may provide a substrate 11. The substrate 11 may be a conductive substrate or a non-conductive substrate. When using a conductive substrate, a metal with excellent electrical conductivity can be used, and the heat generated when the light emitting elements 25 to 28 are operated must be sufficiently dissipated, so a GaAs substrate or a metal substrate with high thermal conductivity can be used, or a silicon (Si) substrate can be used. ) substrates, etc. can be used. For example, copper (Cu) or gold (Au) may be used as the metal substrate, but there is no limitation thereto.

When using a non-conductive substrate, an AlN substrate, sapphire (Al ₂ O ₃ ) substrate, or ceramic-based substrate can be used.

<Electrode pad and heat sink>

A light emitting device package according to an embodiment may provide a plurality of electrode pads 13 to 16, 18a to 18d, and 19a to 19d. Additionally, the light emitting device package according to the embodiment may provide a plurality of electrode pads 21a to 21d and 22a to 22d. For example, a plurality of electrode pads 13 to 16, 18a to 18d, and 19a to 19d may be disposed on the upper part of the substrate 11. For example, a plurality of electrode pads 21a to 21d and 22a to 22d may be disposed on the lower part of the substrate 11.

The electrode pads 13 to 16, 18a to 18d, and 19a to 19d disposed on the upper portion of the substrate 11 are referred to as upper electrode pads, and the electrode pads 21a to 21d disposed on the lower portion of the substrate 11. 22a to 22d) may be referred to as lower electrode pads.

The light emitting device package according to the embodiment may provide a heat sink 23 on the lower part of the substrate 11. The heat sink 23 quickly dissipates the heat transferred to the substrate 11 by the light emitting elements 25 to 28 to the outside, preventing the temperature of the light emitting elements 25 to 28 from rising, thereby maintaining the temperature of the light emitting elements 25 to 28. Deterioration of electrical and/or optical properties can be prevented.

The upper electrode pads 18b, 18c, 18d, 19a to 19d and the lower electrode pads 21a to 21d, 22a to 22d may be electrically connected through the substrate 11. To this end, connection wires (not shown) may be disposed in the via holes 33a to 33d and 34a to 34d of the substrate 11. The upper electrode pads 18a to 18d and 19a to 19d may be electrically connected to the lower electrode pads 21a to 21d and 22a to 22d through connection wiring. For example, tungsten (W) may be used as a connecting wire, but this is not limited.

The lower electrode pads 21a to 21d, 22a to 22d and the heat sink 23 may be formed of the same metal material, but this is not limited. The upper electrode pads (13 to 16, 18a to 18d, 19a to 19d) and the lower electrode pads (21a to 21d, 22a to 22d) may be formed of the same metal material, but are not limited thereto.

For example, the upper electrode pads 13 to 16, 18a to 18d, and 19a to 19d may be made of a conductive material and may be arranged as a single layer or multiple layers. For example, the upper electrode pads 13 to 16, 18a to 18d, and 19a to 19d are aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It may be formed as a single-layer or multi-layer structure, including at least one of the following.

As shown in FIG. 4, the substrate 11 may include a first region 11A, a second region 11B, a third region 11C, and a fourth region 11D. One side of the first area 11A may be placed adjacent to one side of the second area 11B, and the other side of the first area 11A may be placed adjacent to one side of the third area 11C. The other side of the second area 11B may be disposed adjacent to one side of the fourth area 11D. The other side of the third area 11C may be disposed adjacent to the other side of the fourth area 11D.

For example, the first boundary line 12A is defined by one side of the first area 11A and one side of the second area 11B, and the other side of the first area 11A is in contact with one side of the third area 11C. A second boundary line 12B may be defined. In addition, a third boundary line 12C is defined by the other side of the second area 11B and one side of the fourth area 11D, and a third boundary line 12C is defined by the other side of the third area 11C and the other side of the fourth area 11D. 4 A boundary line 12D may be defined. In this case, the first area 11A is defined as an area surrounded by a first border line 12A and a second border line 12B that contact each other in a perpendicular direction, and the second area 11B is a first area that contacts each other in a perpendicular direction. It may be defined as an area surrounded by the border line 12A and the third border line 12C. In addition, the third area 11C is defined as an area surrounded by the second border line 12B and the fourth border line 12D that are in contact with each other in the vertical direction, and the fourth area 11D is the third border line that is in contact with each other in the vertical direction. It may be defined as an area surrounded by (12C) and the fourth boundary line (12D).

The first area 11A, the second area 11B, the third area 11C, and the fourth area 11D may all be disposed with one edge adjacent to each other around the center of the substrate 11.

One side of the first area 11A, one side of the second area 11B, the other side of the third area 11C, and the other side of the fourth area 11D may be arranged along the y-axis direction, for example. The other side of the first area 11A, the other side of the second area 11B, one side of the third area 11C, and one side of the fourth area 11D may be arranged along the y-axis direction, for example.

For example, the first area 11A, the second area 11B, the third area 11C, and the fourth area 11D may have the same area, but this is not limited.

First electrode pads 13 to 16 may be disposed in each of the first area 11A, second area 11B, third area 11C, and fourth area 11D. Second electrode pads 18a to 18d and third electrode pads 19a to 19d may be disposed adjacent to the first electrode pads 13 to 16.

The first electrode pads 13 to 16 may be bonding pads on which the first light-emitting device 25, the second light-emitting device 26, the third light-emitting device 27, and the fourth light-emitting device 28 are mounted. Each of the first light-emitting device 25, the second light-emitting device 26, the third light-emitting device 27, and the fourth light-emitting device 28 is bonded to the first electrode pads 13 to 16 using a conductive adhesive. You can.

The first electrode pads 13 to 16 are used to dissipate heat generated from each of the first light-emitting device 25, the second light-emitting device 26, the third light-emitting device 27, and the fourth light-emitting device 28. Can be used as a heat sink. Therefore, the larger the area of the first electrode pads 13 to 16, the better.

The first electrode pads 13 to 16 have an area larger than the area below each of the first light-emitting element 25, the second light-emitting element 26, the third light-emitting element 27, and the fourth light-emitting element 28. You can have it. The first electrode pads 13 to 16 may have an area of at least 50% of the area of each of the first area 11A, the second area 11B, the third area 11C, and the fourth area 11D. . For example, the first electrode pads 13 to 16 have an area of 50% to 80% of the area of each of the first area 11A, the second area 11B, the third area 11C, and the fourth area 11D. You can have If it is less than 50%, heat dissipation may not be easy. If it exceeds 80%, the arrangement area of the second electrode pads (18a to 18d) and the third electrode pads (19a to 19d) is reduced, so that the area of the second electrode pads (18a to 18d) and the third electrode pads (19a to 19d) is reduced. Deployment may not be easy. For example, the first electrode pads 13 to 16 have an area of 50% to 70% of the area of each of the first area 11A, the second area 11B, the third area 11C, and the fourth area 11D. You can have

The first electrode pads 13 to 16 may have a square shape, for example. The areas of each first electrode pad 13 to 16 may be different, and at least two of them may be the same. For example, the first electrode pad 13 may have an area of 580 mm ² to 600 mm ² , preferably 585 mm ² to 595 mm ² , and more preferably 590.5164 mm ² . For example, the first electrode pad 14 may have an area of 705 mm ² to 720 mm ² , preferably 710 mm ² to 715 mm ² , and more preferably 713.6263 mm ² . For example, the first electrode pad 15 may have an area of 680 mm ² to 705 mm ² , preferably 685 mm ² to 698 mm ² , and more preferably 693.6289 mm ² . For example, the first electrode pad 16 may have an area of 570 mm ² to 590 mm ² , preferably 575 mm ² to 585 mm ² , and more preferably 579.0186 mm ² .

The second electrode pads 18a to 18d and the third electrode pads 19a to 19d may be disposed around the first electrode pads 13 to 16.

The second electrode pads 18a to 18d may be disposed in each of the first area 11A, the second area 11B, the third area 11C, and the fourth area 11D, or may be disposed adjacent to each other. . The third electrode pads 19a to 19d may be disposed in each of the first area 11A, the second area 11B, the third area 11C, and the fourth area 11D, or may be disposed adjacent to each other. .

For example, the second electrode pad 18a may be disposed around the first electrode pad 13 on the first area 11A.

For example, the second electrode pad 18b may be disposed around the first electrode pad 14 in the second area 11B. The second electrode pad 18b may be electrically connected to the first electrode pad 14 disposed on the second area 11B. In other words, the second electrode pad 18b may extend from the first electrode pad 14 disposed on the second area 11B and may be disposed around the first electrode pad 14.

For example, the second electrode pad 18c may be disposed around the first electrode pad 16 in the fourth area 11D. The second electrode pad 18c may be electrically connected to the first electrode pad 15 disposed on the third area 11C. In other words, the second electrode pad 18c extends from the first electrode pad 15 disposed on the third area 11C and is disposed around the first electrode pad 16 on the fourth area 11D. You can.

For example, the second electrode pad 18d may be disposed around the first electrode pad 15 in the third area 11C. The second electrode pad 18d may extend from the third area 11c and be disposed on the third area 11d.

Since the second electrode pads 18b and 18c are formed integrally with the first electrode pads 14 and 15, a separate wire is not needed to electrically connect them, and wire defects, such as wire breakage, can be prevented. .

Meanwhile, the third electrode pad 19a may be disposed around the first electrode pad 13 disposed in the first area 11A and the first electrode pad 14 disposed in the second area 11B. . That is, the third electrode pad 19a may be disposed across the first area 11A and the second area 11B.

The third electrode pad 19b may be disposed around the first electrode pad 13 disposed in the first area 11A and the first electrode pad 14 disposed in the second area 11B. That is, the third electrode pad 19b may be disposed across the first area 11A and the second area 11B.

For example, the third electrode pad 19a may be disposed between the second electrode pad 18a and the third electrode pad 19b in the first area 11A, but this is not limited. For example, the third electrode pad 19b may be disposed between the third electrode pad 19a and the first electrode pad 14 in the second area 11B, but this is not limited.

The third electrode pad 19c may be disposed adjacent to one side of the first electrode pad 15 in the third area 11C. Additionally, the third electrode pad 19d may be disposed around the first electrode pad 16 in the fourth area 11D.

In the fourth area 11D, the second electrode pad 18c may be disposed between the first electrode pad 16 and the second electrode pad 18d. In the fourth area 11D, the second electrode pad 18c may be disposed between the first electrode pad 16 and the third electrode pad 19d. In the fourth area 11D, the second electrode pad 18d may be disposed between the second electrode pad 18c and the third electrode pad 19d.

Each of the first electrode pads 13 to 16 is disposed adjacent to each other, and the second electrode pads 18a to 18d and the third electrode pads 19a to 19d are located on the outer circumference of each first electrode pad 13 to 16. It can be placed according to .

As will be explained later, the first light-emitting element 25, the second light-emitting element 26, the third light-emitting element 27, and the fourth light-emitting element 28 will be disposed on each of the first electrode pads 13 to 16. You can.

The area where the first light-emitting element 25, the second light-emitting element 26, the third light-emitting element 27, and the fourth light-emitting element 28 are disposed on the substrate 11 is defined as the light-emitting area, and the other area is defined as the light-emitting area. can be defined as a non-emissive area. In this case, the first electrode pads 13 to 16 may be placed in the light-emitting area, and the second electrode pads 18a to 18d and the third electrode pads 19a to 19d may be placed in the non-emission area.

For example, the second electrode pads 18a to 18d and the third electrode pads 19a to 19a are disposed in each of the first area 11A, the second area 11B, the third area 11C, and the fourth area 11D. 19d) Each outer surface may be arranged to be spaced apart from the outer surface of the substrate 11 at the same distance. For example, the outer surface of the second electrode pad 18a disposed in the first area 11A and the outer surface of the third electrode pad 19a disposed in the second area 11B are separated from the outer surface of the substrate 11. They can be placed spaced apart at the same distance.

For example, one side of the first electrode pad 13 disposed on the first area 11A and the first electrode pad 14 disposed on the second area 11B facing one side of the first electrode pad 13. ) may be arranged to be spaced apart from the first boundary line 12A at the same distance. For example, the other side of the first electrode pad 13 disposed on the first area 11A and the first electrode pad 15 disposed on the third area 11C facing the other side of the first electrode pad 13. ) may be arranged to be spaced apart from the second boundary line 12B at the same distance. For example, the other side of the first electrode pad 14 disposed on the second region 11B and the first electrode pad 16 disposed on the fourth region 11D facing the other side of the first electrode pad 14. ) may be arranged to be spaced apart from the third boundary line 12C at the same distance. For example, the other side of the first electrode pad 15 disposed on the third region 11C and the first electrode pad 16 disposed on the fourth region 11D facing the other side of the first electrode pad 15. ) may be arranged to be spaced apart from the fourth boundary line 12D at the same distance.

For example, the second electrode pads 18a to 18d may be electrode pads to which a first voltage is applied, and the third electrode pads 19a to 19d may be electrode pads to which a second voltage is applied. The second voltage may have the same amplitude and an opposite phase as the first voltage. For example, if the first voltage is a positive (+) voltage, the second voltage may be a negative (-) voltage. For example, the second electrode pads 18a to 18d may be p electrode pads, and the third electrode pads 19a to 19d may be n electrode pads, but this is not limited.

The first electrode pads 13 to 16 disposed in each of the first area 11A, the second area 11B, the third area 11C and the fourth area 11D are the first electrode pads 13 to 16. Depending on the type of light emitting device (25 to 28) mounted thereon, it may be electrically connected to the second electrode pad (18a to 18d) or the third electrode pad (19a to 19d). For example, a vertical light emitting device is mounted on the first electrode pads 13 to 16 disposed in each of the first area 11A, the second area 11B, the third area 11C, and the fourth area 11D. It can be. In this case, different types of light are emitted on the first electrode pads 13 to 16 disposed in each of the first area 11A, second area 11B, third area 11C, and fourth area 11D. Elements 25 to 28 may be mounted.

For example, the first light-emitting device 25, the second light-emitting device 26, and the third light-emitting device 27 may include a first vertical light-emitting device (50 in FIG. 6). For example, the fourth light emitting device 28 may include a second vertical light emitting device (60 in FIG. 7).

For example, the first vertical light emitting device (50 in FIG. 6) is placed on the first electrode pads 13, 14, and 15 disposed in the first area 11A, the second area 11B, and the third area 11C. can be installed. For example, the second vertical light emitting device (60 in FIG. 7) may be mounted on the first electrode pad 16 disposed in the fourth area 11D. The first vertical light-emitting device (50 in FIG. 6) has a structure in which, for example, a p electrode is disposed below the light-emitting structure, and the second vertical light-emitting device (60 in FIG. 7) has a structure in which, for example, an n-electrode is disposed under the light-emitting structure. It can have a structure.

As another example, a horizontal light emitting device is placed on the first electrode pads 13 to 16 disposed in each of the first area 11A, the second area 11B, the third area 11C, and the fourth area 11D. Alternatively, a flip chip type light emitting device may be mounted.

For example, when the first light emitting device 25 is mounted on the first electrode pad 13 in the first area 11A, the first electrode pad 13 connects the wire 20a to the second electrode pad 18a. can be electrically connected to. In this case, the n electrode of the first light emitting device 25 may be electrically connected to the third electrode pad 19a using a wire 24a.

For example, when the second light emitting device 26 is mounted on the first electrode pad 14 in the second area 11B, the first electrode pad 14 and the second electrode pad 18b are formed as one body. No separate wires are needed. The n electrode of the second light emitting device 26 may be electrically connected to the third electrode pad 19b using a wire 24b.

For example, when the third light emitting device 27 is mounted on the first electrode pad 15 in the third area 11C, the first electrode pad 15 and the second electrode pad 18c are formed as one body. No separate wires are needed. The n electrode of the third light emitting device 27 may be electrically connected to the third electrode pad 19c using a wire 24c.

For example, when the fourth light emitting device 28 is mounted on the first electrode pad 16 in the fourth area 11D, the first electrode pad 16 is connected to the third electrode pad (24d) using the wire 24d. 19d) can be electrically connected. In this case, the p electrode of the fourth light emitting device 28 may be electrically connected to the second electrode pad 18d using a wire 20b.

According to an embodiment, the second electrode pads 18a to 18d each have a different shape, and the third electrode pads 19a to 19d are also laid out to have a different shape, so that the first electrode pads 13 to 16 The area can be maximized.

Meanwhile, as shown in FIG. 3, lower electrode pads 21a to 21d and 22a to 22d may be disposed on the lower surface of the substrate 11. A heat sink 23 may be disposed on the lower surface of the substrate 11. The heat sink 23 may be disposed at the center of the lower portion of the substrate 11. The heat sink 23 may have an area of 60% to 80% of the area of the substrate 11. If it is less than 60%, heat dissipation may not be easy. If it exceeds 80%, the placement area of the lower electrode pads 21a to 21d and 22a to 22d is reduced, so it may not be easy to place the lower electrode pads 21a to 21d and 22a to 22d.

Meanwhile, a plurality of via holes (33a to 33d, 34a to 34d) are formed in the substrate 11, and connection wires (not shown) may be disposed in the via holes (33a to 33d, 34a to 34d).

The upper electrode pads 18a to 18d and 19a to 19d and the lower electrode pads 21a to 21d and 22a to 22d can be electrically connected using these connection wires.

<Light emitting device>

The light emitting device package according to the embodiment may provide a plurality of light emitting devices (25, 26, 27, and 28). The light emitting device may include the first light emitting device 25, the second light emitting device 26, the third light emitting device 27, and the fourth light emitting device 28, but fewer or more light emitting devices may be used. there is.

The light emitting elements 25 to 28 may be bonded to the corresponding first electrode pads 13 to 16 using a corresponding conductive adhesive. For example, the first light emitting device 25 may be disposed on the corresponding first electrode pad 13. For example, the second light emitting device 26 may be disposed on the corresponding first electrode pad 14. For example, the third light emitting device 27 may be disposed on the corresponding first electrode pad 15. For example, the fourth light emitting element 28 may be disposed on the corresponding first electrode pad 16.

The first light-emitting device 25, the second light-emitting device 26, the third light-emitting device 27, and the fourth light-emitting device 28 may generate light of different colors. The first light-emitting device 25, the second light-emitting device 26, the third light-emitting device 27, and the fourth light-emitting device 28 may generate light with maximum peaks at different wavelengths.

For example, at least one of the first light-emitting device 25, the second light-emitting device 26, the third light-emitting device 27, and the fourth light-emitting device 28 emits light to promote chlorophyll production in plants. At least one other light-emitting device among the first light-emitting device 25, the second light-emitting device 26, the third light-emitting device 27, and the fourth light-emitting device 28 is used to promote the photosynthetic function of the plant. Light can be generated.

For example, the first light-emitting device 25, the second light-emitting device 26, and the third light-emitting device 27 are used as light-emitting devices that generate light to promote chlorophyll production in plants, and promote photosynthesis in plants. The fourth light emitting device 28 may be used as a light emitting device that generates light for the light emitting device.

For example, the first light-emitting device 25, the second light-emitting device 26, and the third light-emitting device 27 may generate red light, and the fourth light-emitting device 28 may generate blue light. For example, the first light-emitting device 25, the second light-emitting device 26, and the third light-emitting device 27 may generate red light with a peak wavelength ranging from 600 nm to 680 nm. For example, the fourth light emitting device 28 can generate blue light with a peak wavelength in the range of 400 nm to 470 nm.

The first light-emitting device 25, the second light-emitting device 26, the third light-emitting device 27, and the fourth light-emitting device 28 may have electrical and optical characteristics as shown in Table 1 below.

Case Flux(lm) Po(mW) WP(nm) R1 23.2 335.8 656.8 R2 22.3 327.2 657.0 R3 23.2 334.9 656.7 B 17.7 629.5 447.4 entire 39.9 947.7 447.8

R1, R2, and R3 may each represent a first light-emitting device, a second light-emitting device, and a third light-emitting device. B may represent the fourth light emitting element. Flux represents the speed of light, Po represents the light output, and WP may represent the wavelength of the maximum peak. Therefore, with this R1R2R3B arrangement structure, a greater luminous flux and greater light output can be obtained.

Typically, the fourth light emitting device 28 that generates blue light generates less heat than the first to third light emitting devices 25 to 27 that generate red light. Accordingly, the fourth light emitting element 28 is mounted on the first electrode pad 16, which has the smallest area, and the first to third light emitting elements 25 to 27 are mounted on the other electrode pads 13 to 15. It can be installed.

The first light-emitting device 25, the second light-emitting device 26, and the third light-emitting device 27 may be vertical light-emitting devices, but are not limited thereto. For example, the first light-emitting device 35, the second light-emitting device 36, and the third light-emitting device 37 may be vertical light-emitting devices of a different type from the fourth light-emitting device 38. For example, the first light-emitting device 35, the second light-emitting device 36, and the third light-emitting device 37 include a first vertical light-emitting device (50 in FIG. 6), and the fourth light-emitting device 28 It may include a second vertical light emitting device (60 in FIG. 7).

As shown in FIGS. 6 and 7, the thickness of the first vertical light-emitting device 50 is T1, and the thickness of the second vertical light-emitting device 60 is T2. In this case, the thickness T1 of the first vertical light emitting device 50 may be greater than the thickness T2 of the second vertical light emitting device 60.

If the thicknesses (t1, t2) of the first electrode pads (13 to 16) are the same, and the first to third light emitting devices (25 to 27), which are the first vertical light emitting device (50), and the second vertical light emitting device When the fourth light emitting device 28 of (60) is mounted on the first electrode pads 13 to 16, the thickness between the first vertical light emitting device 50 and the second vertical light emitting device 60 ( Due to the difference (T1, T2), the positions of the light emitting surfaces 501 and 601 from which light is emitted are different. The light emitting surfaces 501 and 601 may refer to the top surface of the semiconductor layer of the first vertical light emitting device 50 or the second vertical light emitting device 60.

Since the thickness T1 of the first vertical light emitting device 50 is greater than the thickness T2 of the second vertical light emitting device 60, the light emitting surface 501 of the first to third light emitting devices 25 to 27 ) may be positioned higher than the light emitting surface 601 of the fourth light emitting element 28. As the positions of the light emitting surfaces 501 and 601 between the first to fourth light emitting devices 25 to 28 are changed in this way, light with the same light output is emitted from the first to fourth light emitting devices 25 to 28. Even so, the luminous flux of the fourth light-emitting device 28 is smaller than that of the first to third light-emitting devices 25 to 27 when viewed from the target point, so desired plant growth control may be difficult.

To solve this problem, in the embodiment, the light emitting surfaces 501 and 601 of the first to fourth light emitting devices 25 to 28 may be positioned identically.

To this end, as shown in FIG. 5, the thickness t1 of the first electrode pads 13 to 16 may vary. For example, the thickness t1 of the first electrode pads 13, 14, and 15 on which the first light-emitting device 25, the second light-emitting device 26, and the third light-emitting device 27 are mounted may be the same. The thickness t1 of the first electrode pads 13, 14, and 15 may be different from the thickness t2 of the first electrode pad 16 on which the fourth light emitting device 28 is mounted.

For example, the thickness t2 of the first electrode pad 16 on which the fourth light-emitting device 28 is mounted is the first electrode pad 13 on which the second light-emitting device 26 and the third light-emitting device 27 are mounted. 14, 15) may be larger than the thickness (t1). Specifically, the thickness (t2) of the first electrode pad 16 on which the fourth light-emitting device 28 is mounted is such that the light-emitting surface 601 of the fourth light-emitting device 28 is the first light-emitting device 25 and the second light-emitting device 25. First electrode pads 13 and 14 on which the second light-emitting element 25 and the third light-emitting element 26 are mounted so as to be positioned identically to the light-emitting surface 501 of the light-emitting element 28 and the third light-emitting element 27. , 15) may be larger than the thickness (t1).

For example, the sum of the thickness T1 of the first light emitting device 25 and the thickness T1 of the first electrode pad 13 on which the first light emitting device 25 is mounted is the thickness of the fourth light emitting device 28 ( The sum of the thickness T2) and the thickness t2 of the first electrode pad 16 on which the fourth light emitting device 28 is mounted may be the same. For example, the sum of the thickness T1 of the second light-emitting device 26 and the thickness T1 of the first electrode pad 14 on which the second light-emitting device 26 is mounted is the thickness of the fourth light-emitting device 28 (2). ) and the thickness (t2) of the first electrode pad 16 on which the fourth light emitting device 28 is mounted may be equal to the thickness (T1) of the third light emitting device 27 and the third light emitting device. The sum of the thickness (t1) of the first electrode pad 15 on which the element 27 is mounted is the thickness (2) of the fourth light-emitting element 28 and the first electrode pad 16 on which the fourth light-emitting element 28 is mounted. ) The sum of the thicknesses (t2) may be the same as Equation 1.

[Equation 1]

T1+t1=T2+t2

For example, the difference (α) between the thickness (T1) of each of the first to third light emitting devices (25 to 27) and the thickness (T2) of the fourth light emitting device (28) can be expressed as Equation 2.

[Equation 2]

α=T1-T2

For example, the thickness t1 of the first electrode pads 13, 14, and 15 on which each of the first to third light emitting elements 25 to 27 are mounted and the first electrode pad on which the fourth light emitting element 28 is mounted ( The difference (β) between the thicknesses (t2) of 16) can be expressed as Equation 3.

[Equation 3]

β=t2-t1

Substituting equation 2 into equation 1, it becomes equation 4.

[Equation 4]

α+T2+t1=T2+t2

α=t2-t1

From Equation 3 and Equation 4, Equation 5 can be calculated.

[Equation 5]

α=β

That is, the difference (α) between the thickness T1 of each of the first to third light emitting devices 25 to 27 and the thickness T2 of the fourth light emitting device 28 is the difference α between the first to third light emitting devices 25 to 27. 27) Difference (β) between the thickness (t1) of the first electrode pads (13, 14, 15) on which each is mounted and the thickness (t2) of the first electrode pad (16) on which the fourth light emitting element (28) is mounted ) may be the same as

According to an embodiment, the fourth light-emitting device 28 is mounted by an amount α in which the thickness T1 of each of the first to third light-emitting devices 25 to 27 is thicker than the thickness T2 of the fourth light-emitting device. By forming the thickness t2 of the electrode pad 16 to be thicker than the thickness t1 of the first electrode pads 13, 14, and 15 on which each of the first to third light emitting elements 25 to 27 are mounted, by β. , the light-emitting surfaces 501 and 601 of all of the first to fourth light-emitting elements 25 to 28 are located on the same surface, so that a uniform light flux is transmitted to the target, enabling optimal plant growth control.

Meanwhile, the thickness t2 of the first electrode pad 16 on which the fourth light-emitting device 28 is mounted is equal to that of the first electrode pads 13 through 15 on which the first to third light-emitting devices 25 to 27 are mounted. By making it thicker than the thickness t1, the relatively small area of the first electrode pad 16 on which the fourth light emitting device 28 is mounted can be compensated for. That is, the first electrode pad on which the fourth light-emitting device 28 is mounted, which has an area smaller than the area of the first electrode pads 13, 14, and 15 on which the first to third light-emitting devices 25 to 27 are respectively mounted. By making the thickness (t2) of (16) thicker than the thickness (t1) of the first electrode pads (13, 14, and 15), the overall volume is increased to be as large as the first electrode pads (13, 14, and 15). Therefore, the heat dissipation performance generated by the fourth light emitting device 28 can be improved.

According to an embodiment, the first to fourth light emitting devices 25 to 28 include vertical light emitting devices of different types, so that the first electrode pad on which the first to fourth light emitting devices 25 to 28 are mounted. By varying the area of (13 to 16), the layout of the second electrode pads (181, 18b, 18c, 18d) and the third electrode pads (19a to 19d) around the first electrode pads (13 to 16) is optimized. can do.

<First vertical light emitting device>

Figure 6 is a cross-sectional view showing a first vertical light-emitting device in a light-emitting device package according to an embodiment.

Referring to FIG. 6, the first vertical light emitting device 50 includes a light emitting structure 510, a window semiconductor layer 515, a mirror layer 521, a conductive contact layer 523, a bonding layer 540, and a conductive support layer. (550), and may include a protective layer (580).

The light emitting structure 510 may include a first conductive semiconductor layer 511, an active layer 512, and a second conductive semiconductor layer 513. The active layer 512 may be disposed between the first conductive semiconductor layer 511 and the second conductive semiconductor layer 513. The active layer 512 may be disposed under the first conductive semiconductor layer 511, and the second conductive semiconductor layer 513 may be disposed under the active layer 512.

For example, the first conductivity type semiconductor layer 511 is formed of an n-type semiconductor layer to which an n-type dopant is added as a first conductivity type dopant, and the second conductivity type semiconductor layer 513 is formed of p as a second conductivity type dopant. It may be formed as a p-type semiconductor layer to which a type dopant is added. Additionally, the first conductivity type semiconductor layer 511 may be formed as a p-type semiconductor layer, and the second conductivity type semiconductor layer 513 may be formed as an n-type semiconductor layer.

The first conductive semiconductor layer 511 may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer 511 may be implemented as a compound semiconductor. For example, the first conductive semiconductor layer 511 may be implemented as at least one of a compound semiconductor of group II-VI elements and a compound semiconductor of group III-V elements. For example, the first conductive semiconductor layer 511 is a phosphorus (P)-based semiconductor, and has a composition formula of (Al _x Ga _1-x ) _y In _1-y P (0≤x≤1, 0≤y≤1) It can be implemented with a semiconductor material having. In the composition formula of the first conductive semiconductor layer 511, y may have a value of 0.5, and x may have a value of 0.5 to 0.8. The first conductive semiconductor layer 511 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, etc., and may be doped with an n-type dopant such as Si, Ge, Sn, Se, or Te.

The active layer 512 is formed by meeting electrons (or holes) injected through the first conductive semiconductor layer 511 and holes (or electrons) injected through the second conductive semiconductor layer 513. It is a layer that emits light due to the difference in the band gap of the energy band depending on the forming material. The active layer 512 may be formed in any one of a single well structure, a multi-well structure, a quantum dot structure, or a quantum wire structure, but is not limited thereto.

The active layer 512 may be implemented as a compound semiconductor. For example, the active layer 512 may be implemented with at least one of compound semiconductors of group II-VI and group III-V elements. For example, the active layer 512 may be implemented as a semiconductor material having a composition formula of (Al _x Ga _1-x ) _y In _1-y P (0≤x≤1, 0≤y≤1). The active layer 512 is a phosphorus (P)-based semiconductor and may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, etc. When the active layer 512 is implemented as a multi-well structure, the active layer 512 may be implemented by stacking a plurality of well layers and a plurality of barrier layers. The active layer 512 may emit light with a peak wavelength in the red band, for example, in the range of 600 nm to 680 nm.

The second conductive semiconductor layer 513 may be implemented as, for example, a p-type semiconductor layer. The second conductive semiconductor layer 513 may be implemented as a compound semiconductor. For example, the second conductive semiconductor layer 513 may be implemented as at least one of a compound semiconductor of group II-VI elements and a compound semiconductor of group III-V elements. For example, the second conductive semiconductor layer 513 may be implemented with a semiconductor material having the composition formula (Al _x Ga _1-x ) _y In _1-y P (0≤x≤1, 0≤y≤1) . The second conductive semiconductor layer 513 is a phosphorus (P)-based semiconductor, and may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, etc., and may be a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or C. may be doped. For example, the light emitting structure 510 may be implemented by including at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), and phosphorus (P).

Meanwhile, the first conductive semiconductor layer 511 may include a p-type semiconductor layer and the second conductive semiconductor layer 513 may include an n-type semiconductor layer. Additionally, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed under the second conductivity type semiconductor layer 513. Accordingly, the light emitting structure 510 may have at least one of np, pn, npn, and pnp junction structures. Additionally, the doping concentration of impurities in the first conductivity type semiconductor layer 511 and the second conductivity type semiconductor layer 513 may be formed uniformly or non-uniformly. That is, the structure of the light emitting structure 510 can be formed in various ways, and is not limited thereto.

The light emitting device according to the embodiment may include a window semiconductor layer 515 made of a semiconductor material. The window semiconductor layer 515 may be implemented with a semiconductor material having the composition formula (Al _x Ga _1-x ) _y In _1-y P (0≤x≤1, 0≤y≤1). The window semiconductor layer 515 may be selected from, for example, AlGaInP, AlInP, GaP, GaInP, etc. The window semiconductor layer 515 may be disposed below the second conductive semiconductor layer 513. The window semiconductor layer 515 is a conductive semiconductor and can provide a current spreading effect.

The window semiconductor layer 515 according to the embodiment is a P-type dopant and may include carbon. The dopant concentration of carbon may be higher than the dopant concentration doped in the second conductive semiconductor layer 513, and may be, for example, in the range of 5E18 cm ^-3 to 1E20 cm ^-3 . This window semiconductor layer 515 can effectively diffuse current by using a high concentration of dopant. Additionally, the window semiconductor layer 515 may be disposed to be thicker than the thickness of the second conductive semiconductor layer 513, and may be formed to have a thickness (T1) in the range of 0.2㎛ to 0.5㎛, for example, 0.22㎛ ± 0.02㎛. If the window semiconductor layer 515 is thinner than the thickness T1, the current diffusion effect may be reduced, and if the window semiconductor layer 515 is thinner than the thickness T1, light extraction efficiency may be reduced.

The lower outer portion 515A of the window semiconductor layer 515 may be disposed to have a wider width than the upper surface, thereby increasing the distance between the light emitting structure 510 and the reflective layer 530. Accordingly, the sidewall of the light emitting structure 510 can be protected.

A mirror layer 521, a conductive contact layer 523, a reflective layer 530, a bonding layer 540, and a conductive support layer 550 are disposed below the window semiconductor layer 515.

The mirror layer 521 is disposed below the light emitting structure 510, and the mirror layer 521 reflects light incident from the light emitting structure 510 in the direction of the light emitting structure 510. The mirror layer 521 includes a material with a lower refractive index than that of the light emitting structure 510 and the window semiconductor layer 515, and may include at least one of a low refractive index layer, a metal oxide layer, and a metal nitride layer. .

The mirror layer 521 may be formed of a distributed Bragg reflector (DBR) layer. The distributed Bragg reflector layer has a structure in which two dielectric layers with different refractive indices are alternately arranged, and each dielectric layer is made of Si and Zr. , may be an oxide or nitride of an element selected from the group consisting of Ta, Ti, and Al, and specifically, any one of SiO ₂ layer, Si ₃ N ₄ layer, TiO ₂ layer, Al ₂ O ₃ layer, and MgO layer. It can be included. Each dielectric layer can be formed with a thickness of λ/4n, where λ is the wavelength of light emitted from the active layer, and n represents the refractive index of each dielectric layer.

The conductive contact layer 523 may be implemented to be in contact with the window semiconductor layer 515, for example, in ohmic contact. The conductive contact layer 523 may be in contact with the window semiconductor layer 515 and electrically connected to the light emitting structure 510. The conductive contact layer 523 is provided in a structure where a plurality of contact parts are spaced apart from each other, and each contact part penetrates the mirror layer 521. The top view shape of each contact portion of the conductive contact layer 523 may be dot-shaped, circular, or polygonal, but is not limited thereto.

Each contact portion of the conductive contact layer 523 is connected to each other by the reflective layer 530 and is disposed in an area that does not overlap the first electrode 560 in the vertical direction. The mirror layer 521 may be disposed in an area that overlaps the first electrode 560 in the vertical direction. Accordingly, the mirror layer 521 blocks the current supplied from the conductive support layer 550, and each contact part of the conductive contact layer 523 evenly distributes and supplies the current.

The conductive contact layer 523 may be formed of a metal having a lower refractive index than that of the window semiconductor layer 515, a transparent metal nitride, or a transparent metal oxide. The conductive contact layer 523 is made of a metal or non-metallic material with a transmittance of 80% or more, and may be formed of a material different from the mirror layer 521, such as ITO (Indium-Tin-Oxide), AuBe, GeAu, AuZn, IZO. (Indium-Zinc-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony-Tin-Oxide), IZTO (Indium-Zinc-Tin-Oxide), IAZO (Indium-Aluminum-Zinc-Oxide), GZO ( It may contain at least one selected from materials such as Gallium-Zinc-Oxide), IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), and AZO (Aluminum-Zinc-Oxide). .

The conductive contact layer 523 may be formed to be thinner than the thickness of the window semiconductor layer 515. For example, if the thickness T2 of the conductive contact layer 523 exceeds the range, the light absorption rate increases, thereby increasing the transmittance and light quantity. This decreases, and if it is too thin, the material of the reflective layer 530 may diffuse and the electrical characteristics may deteriorate.

The contact area between the conductive contact layer 523 and the window semiconductor layer 515 may be increased in proportion to the distance between the conductive contact layer 523 and the electrode pad 570. For example, the contact area may decrease as the distance between the conductive contact layer 523 and the electrode pad 570 becomes closer, and conversely, as the distance between the conductive contact layer 523 and the electrode pad 570 increases, the contact area may increase. At this time, the rate of increase in contact area may be increased linearly, non-linearly, or stepwise, but is not limited thereto.

Alternatively, the contact area of the conductive contact layer 523 with the window semiconductor layer 515 becomes smaller as it approaches the area perpendicular to the electrode pad 570, and as the conductive contact layer 523 gets closer to the area perpendicular to the electrode pad 570, the window semiconductor layer becomes smaller. The contact area with (515) can be increased.

A reflective layer 530 is disposed below the conductive contact layer 523, and the reflective layer 530 is in contact with the lower surface of the conductive contact layer 523. The reflective layer 530 includes a high metal having a reflectivity of 80% or more, such as Ag, Au, or Al.

The reflective layer 530 and the conductive contact layer 523 may be laminated in an Omni Directional Reflector layer (ODR) structure. The omni-directional reflective structure includes a reflective layer 530 made of a metal and the reflective layer 530 on the reflective layer 530. The metal reflective layer may be Ag, Au, or Al, and the low refractive index layer may include the transparent metal oxide or transparent metal nitride disclosed above. In addition, by providing a distributed Bragg reflection structure and an omnidirectional reflection structure, it is possible to improve the omnidirectional reflection angle at the interface between the reflection layer 520 and the conductive contact layer 523. Transverse Magnetic) By improving the reflection characteristics for polarized light, light extraction can be improved, thereby providing a light emitting device with 100% light reflectance in the red wavelength band.

The bonding layer 540 may perform the function of attaching the reflective layer 530 and the conductive support layer 550. The bonding layer 540 is, for example, selected from materials such as Sn, AuSn, Pd, Al, Ti, Au, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Ta, Ti/Au/In/Au, etc. It may include at least one selected.

The conductive support layer 550 is formed on a semiconductor substrate implanted with Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurities (e.g., Si, Ge, GaN, GaAs, ZnO, SiC, SiGe). etc.) may include at least one selected from among them. The conductive support layer 550 may be formed in the range of 30㎛ to 300㎛, and may be formed to be more than 80% of the thickness from the conductive contact layer 523 to the conductive support layer 550.

The light emitting device according to the embodiment may include a first electrode 560 and an electrode pad 570 disposed on the light emitting structure 510.

The first electrode 560 may be electrically connected to the first conductive semiconductor layer 511. The first electrode 560 may be disposed in contact with the first conductive semiconductor layer 511. The first electrode 560 may be disposed in ohmic contact with the first conductive semiconductor layer 511. The first electrode 560 may include an area in ohmic contact with the light emitting structure 510. The first electrode 560 may include a region in ohmic contact with the first conductive semiconductor layer 511. The first electrode 560 may include at least one selected from Ge, Zn, Mg, Ca, Au, Ni, AuGe, AuGe/Ni/Au, etc. The first electrode 560 may be formed in an arm pattern branched in different directions and connected to each other, as shown in FIG. 4 .

The electrode pad 570 may be electrically connected to the first electrode 560. The electrode pad 570 may be disposed on the first electrode 560. The electrode pad 570 may be placed in contact with the first electrode 560 . The electrode pad 570 may be connected to an external power source to provide power to the light emitting structure 510. The electrode pad 570 includes Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, Mo, Ti/Au/Ti/Pt/Au, Ni/Au/Ti/Pt/Au, Cr/Al/ It may include at least one selected from Ni/Cu/Ni/Au, etc. The electrode pad 570 may not be formed, and a predetermined area of the first electrode 560 may be used as the electrode pad area. That is, the electrode pad 7 may be a partial area of the first electrode 560 or may be a separate pad.

A light emitting device according to an embodiment may include a protective layer 580. The protective layer 580 may be disposed on top of the light emitting structure 510. The protective layer 580 may be disposed around the light emitting structure 510. The protective layer 580 may be disposed on the side of the light emitting structure 510. The protective layer 580 may be disposed around the window semiconductor layer 515 . Some areas of the protective layer 580 may be disposed on some areas of the window semiconductor layer 515 .

The protective layer 580 may be disposed on the first conductive semiconductor layer 511. The protective layer 580 may be disposed on the first electrode 560. The protective layer 580 may include a light extraction structure (R) provided on its upper surface. The light extraction structure may be referred to as a concavo-convex structure, and may also be referred to as roughness. The light extraction structures may be arranged regularly or randomly.

According to an embodiment, the upper surface of the first conductive semiconductor layer 511 may be provided flat and the light extraction structure R may be provided in the protective layer 580. That is, the light extraction structure may not be provided on the upper surface of the first conductive semiconductor layer 511, and the light extraction structure R may be provided only on the protective layer 580.

The protective layer 580 may include at least one of oxide or nitride. The protective layer 580 is, for example, at least one selected from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, etc. can be formed.

The thickness of the protective layer 580 may be in the range of 1㎛ to 2㎛. The refractive index of the protective layer 580 may be implemented to have a lower value than the refractive index of the first conductivity type semiconductor layer 511. By implementing the refractive index difference in this way, light extraction efficiency according to the refractive index difference can be improved.

For example, the wavelength of light emitted from the active layer 512 emits light in a red wavelength band, the thickness of the first conductive semiconductor layer 511 is 1 μm to 1.5 μm, and the thickness of the protective layer 580 is 1 μm to 1.5 μm. The thickness may be thicker than that of the first conductive semiconductor layer 511. For example, the first conductive semiconductor layer 511 may be implemented to have a composition formula of AlGaInP, and the wavelength of light emitted from the active layer 512 may be implemented to have a range of 600 nm to 630 nm.

The light extraction structure provided in the protective layer 580 may be formed as a pattern with a height of micrometers or a pattern with a height of nanometers.

Meanwhile, power may be applied to the light emitting structure 510 by an external power source connected to the conductive support layer 550 and the first electrode pad 570. Power may be applied to the second conductive semiconductor layer 513 through the conductive support layer 550.

Additionally, according to the embodiment, the second electrode electrically connected to the second conductive semiconductor layer 513 may be defined as a conductive contact layer 523, a reflective layer 530, a bonding layer 540, and a conductive support layer 550. You can.

<Second vertical light emitting device>

Figure 7 is a cross-sectional view showing a second vertical light-emitting device in a light-emitting device package according to an embodiment.

Referring to FIG. 7, the second vertical light emitting device 60 has a second electrode 625 electrically connected to the first conductive semiconductor layer 611 disposed at the top and a second conductive semiconductor layer 613 at the bottom. ) and a first electrode (hereinafter, described as the second electrode layer 650 for convenience of explanation) electrically connected to the electrode layer 650 may be provided.

The first light-emitting element 131 includes a light-emitting structure 610 having a plurality of semiconductor layers 611, 612, and 613, a first electrode layer 620 below the light-emitting structure 610, and a first electrode layer 620 below the first electrode layer 620. It may include a second electrode layer 650, an insulating layer 641 between the first and second electrode layers 620 and 650, and a first electrode 625.

The light emitting structure 610 may include a first conductive semiconductor layer 611, an active layer 612, and a second conductive semiconductor layer 613. The first conductivity type semiconductor layer 611 may be a semiconductor having an n-type dopant, and the second conductivity type semiconductor layer 613 may be a semiconductor having a p-type dopant. The upper surface of the first conductive semiconductor layer 611 may be formed as a rough uneven portion 611A. The light emitting structure 610 is selectively formed from a compound semiconductor of group II to V elements and group III to V elements, and can generate, for example, blue light with a peak wavelength in the range of 400 nm to 470 nm. The conductive semiconductor layers 11 and 13 are, for example, semiconductor layers using a compound semiconductor of group III-V elements, such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP. , and may include at least one of GaP. The active layer 612 includes a well layer/barrier layer, and the period of the well layer/barrier layer is, for example, InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaA, InGaAs/ Includes at least one of the following pairs: GaAs, InGaP/GaP, AlInGaP/InGaP, and InP/GaAs. The light emitting structure 610 can be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The first electrode layer 620 is disposed between the light emitting structure 610 and the second electrode layer 650, and is electrically connected to the second conductive semiconductor layer 613 of the light emitting structure 610, and the second electrode layer 650 ) and is electrically insulated from The first electrode layer 620 includes a first contact layer 615, a reflective layer 617, and a capping layer 619, and the first contact layer 615 includes a reflective layer 617 and a second conductive semiconductor layer 613. ), and the reflective layer 617 is disposed between the first contact layer 615 and the capping layer 619. The first contact layer 615, the reflective layer 617, and the capping layer 619 may be formed of different conductive materials, but are not limited thereto.

The first contact layer 615 is in contact with the second conductive semiconductor layer 613 and, for example, may form ohmic contact with the second conductive semiconductor layer 613. The first contact layer 615 may be formed of, for example, a conductive oxide film, a conductive nitride, or a metal. The first contact layer 615 is, for example, made of Indium Tin Oxide (ITO), ITO Nitride (ITON), Indium Zinc Oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), and Aluminum Gallium Zinc Oxide (AGZO). , IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO) Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, Ti.

The reflective layer 617 may be electrically connected to the first contact layer 615 and the capping layer 619. The reflective layer 617 may function to increase the amount of light extracted to the outside by reflecting light incident from the light emitting structure 610.

The reflective layer 617 may be formed of metal with a light reflectance of 70% or more. For example, the reflective layer 617 may be formed of a metal or alloy containing at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer 617 is made of metal or alloy and Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Zinc-Tin-Oxide (IZTO), and Indium-Aluminum-Zinc-Oxide (IAZO). , multi-layered using light-transmitting conductive materials such as IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide), and ATO (Antimony-Tin-Oxide). can be formed. For example, in an embodiment, the reflective layer 617 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy. For example, the reflective layer 617 may be formed of Ag layers and Ni layers alternately, or may include Ni/Ag/Ni, Ti layers, or Pt layers. As another example, the first contact layer 615 may be formed under the reflective layer 617, and at least a portion may pass through the reflective layer 617 and contact the second conductive semiconductor layer 613. As another example, the reflective layer 617 may be disposed below the first contact layer 615, and a portion may pass through the first contact layer 615 and contact the second conductive semiconductor layer 613.

The light emitting device according to the embodiment may include a capping layer 619 disposed below the reflective layer 617. The capping layer 619 is in contact with the lower surface of the reflective layer 617, and the contact portion 634 is combined with the second electrode 625 to function as a wiring layer that transmits power supplied from the second electrode 625. The capping layer 619 may be formed of a metal, and may include, for example, at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.

The contact portion 634 of the capping layer 619 is disposed in an area that does not overlap in the vertical direction with the light emitting structure 610, and overlaps perpendicularly with the second electrode 625. The contact portion 634 of the capping layer 619 is disposed in an area that does not overlap the first contact layer 615 and the reflective layer 617 in the vertical direction. The contact portion 634 of the capping layer 619 is disposed at a lower position than the light emitting structure 610 and may be in direct contact with the second electrode 625.

The second electrode 625 may be formed as a single layer or a multi-layer. The single layer may be Au, and if it is a multi-layer, it may include at least two of Ti, Ag, Cu, and Au. Here, in the case of a multilayer, it may be a stacked structure of Ti/Ag/Cu/Au or a stacked structure of Ti/Cu/Au. At least one of the reflective layer 617 and the first contact layer 615 may be in direct contact with the second electrode 625, but the present invention is not limited thereto.

The second electrode 625 may be disposed in the area A1 between the outer side wall of the first electrode layer 620 and the light emitting structure 610. A protective layer 630 and a light-transmissive layer 645 may be in contact with the periphery of the first electrode 625.

The protective layer 630 is disposed on the lower surface of the light emitting structure 610, and may be in contact with the lower surface of the second conductive semiconductor layer 613 and the first contact layer 615, and may be in contact with the reflective layer 617. there is.

The inner portion of the protective layer 630 that overlaps the light emitting structure 610 in the vertical direction may be arranged to overlap the area of the protrusion in the vertical direction. The outer portion of the protective layer 630 extends over the contact portion 634 of the capping layer 619 and is disposed to overlap the contact portion 634 in a vertical direction. The outer portion of the protective layer 630 may be in contact with the second electrode 625 and, for example, may be disposed on the peripheral surface of the second electrode 625.

The inner portion of the protective layer 630 may be disposed between the light emitting structure 610 and the first electrode layer 620, and the outer portion may be disposed between the light transmitting layer 645 and the contact portion 634 of the capping layer 619. The outer portion of the protective layer 630 extends to the outer area A1 than the side wall of the light emitting structure 610, thereby preventing moisture from penetrating.

The protective layer 630 may be defined as a channel layer, a low-refractive material, or an isolation layer. The protective layer 630 may be implemented with an insulating material, for example, oxide or nitride. For example, the protective layer 630 may be formed by selecting at least one from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc. The protective layer 630 may be formed of a transparent material.

The light emitting device according to the embodiment may include an insulating layer 641 that electrically insulates the first electrode layer 620 and the second electrode layer 650. The insulating layer 641 may be disposed between the first electrode layer 620 and the second electrode layer 650. The top of the insulating layer 641 may be in contact with the protective layer 630. The insulating layer 641 may be implemented with, for example, oxide or nitride. For example, the insulating layer 641 may be formed by selecting at least one from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc.

The insulating layer 641 is in contact with the lower surface of the first electrode layer 620 and the upper surface of the second electrode layer 650, and the protective layer 630, capping layer 619, contact layer 15, and reflective layer 617, respectively. It can be formed thicker than the thickness of .

The second electrode layer 650 includes a diffusion prevention layer 652 disposed below the insulating layer 641, a bonding layer 654 disposed below the diffusion prevention layer 652, and a conductive support member disposed below the bonding layer 654 ( 656) and may be electrically connected to the first conductive semiconductor layer 611. In addition, the second electrode layer 650 optionally includes one or two of the diffusion prevention layer 652, the bonding layer 654, and the conductive support member 656, and the diffusion prevention layer 652 or the bonding layer 654 At least one of them may not be formed.

The diffusion prevention layer 652 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The diffusion barrier layer 652 may function as a diffusion barrier layer between the insulating layer 641 and the bonding layer 654. The diffusion prevention layer 652 may be electrically connected to the bonding layer 654 and the conductive support member 656, and may be electrically connected to the first conductive semiconductor layer 611.

The diffusion prevention layer 652 may function to prevent the material contained in the bonding layer 654 from diffusing toward the reflective layer 617 during the process in which the bonding layer 654 is provided. The diffusion prevention layer 652 can prevent materials such as tin (Sn) included in the bonding layer 654 from affecting the reflective layer 617.

The bonding layer 654 includes a barrier metal or bonding metal, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. can do. The conductive support member 656 supports the light emitting structure 610 according to the embodiment and may perform a heat dissipation function. The bonding layer 654 may include a seed layer.

The conductive support member 656 is a metal or carrier substrate, such as Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W, or a semiconductor substrate implanted with impurities (e.g., Si, Ge, It may be formed of at least one of GaN, GaAs, ZnO, SiC, SiGe, etc.). The conductive support member 656 is a layer for supporting the light emitting device, and its thickness is 80% or more of the thickness of the second electrode layer 650, and may be formed to be 30 μm or more.

Meanwhile, the second contact layer 633 is disposed inside the first conductive semiconductor layer 611 and is in contact with the first conductive semiconductor layer 611. The upper surface of the second contact layer 633 may be disposed above the lower surface of the first conductive semiconductor layer 611, and is electrically connected to the first conductive semiconductor layer 611, and the active layer 612 and the second It is insulated from the conductive semiconductor layer 613.

The second contact layer 633 may be electrically connected to the second electrode layer 650. The second contact layer 633 may be disposed to penetrate the first electrode layer 620, the active layer 612, and the second conductive semiconductor layer 613. The second contact layer 633 is disposed in a recess 612 disposed within the light emitting structure 610, and is formed by the active layer 612, the second conductive semiconductor layer 613, and the protective layer 630. It is insulated. A plurality of second contact layers 633 may be arranged to be spaced apart from each other.

The second contact layer 633 may be connected to the protrusion 651 of the second electrode layer 650, and the protrusion 651 may protrude from the diffusion prevention layer 652. The protrusion 651 penetrates through the hole 641A disposed in the insulating layer 641 and the protective layer 630 and may be insulated from the first electrode layer 620.

The second contact layer 633 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo, for example. As another example, the protrusion 501 may include at least one of the materials constituting the diffusion prevention layer 652 and the bonding layer 654, but is not limited thereto. For example, the protrusion 651 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta.

The second electrode 625 is electrically connected to the first electrode layer 620 and may be exposed in the area A1 outside the side wall of the light emitting structure 610. The second electrode 625 may be disposed one or more than one. The second electrode 625 may include at least one of, for example, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.

The light-transmitting layer 645 protects the surface of the light-emitting structure 610, can insulate the second electrode 625 and the light-emitting structure 610, and can be in contact with the periphery of the protective layer 630. The light-transmitting layer 645 has a lower refractive index than the material of the semiconductor layer constituting the light-emitting structure 610, and can improve light extraction efficiency. The light transmitting layer 645 may be implemented with, for example, oxide or nitride. For example, the light transmitting layer 645 is formed by selecting at least one selected from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, etc. It can be. Meanwhile, the light transmitting layer 645 may be omitted depending on the design. According to an embodiment, the light emitting structure 610 may be driven by the first electrode layer 620 and the second electrode layer 650.

The first light-emitting device 131 is a vertical type in which a second electrode 625 is disposed on a portion of the light-emitting structure 610, and a second electrode layer 650 having a support member as the first electrode 650 is disposed below. A light emitting chip having an electrode structure may be provided.

In the above, it is explained that the fourth light emitting device 28 generating blue light is mounted on the thickest first electrode pad 16, but any of the first to third light emitting devices 25 to 27 emits light. The device may also be mounted on the first electrode pad 16, which has the thickest thickness. However, the light emitting device 28 mounted on the thickest first electrode pad 16 has the structure of the second vertical light emitting device 60 having a second thickness T2 as shown in FIG. 7. As shown in FIG. 6, the light emitting elements 25 to 27 mounted on the remaining first electrode pads 13, 14, and 15 have a first thickness T1 thicker than the second thickness T2. It must have the structure of the first vertical light emitting device 50.

<Zener diode>

As shown in FIG. 2, Zener diodes 31a, 31b, 31c, and 31d are disposed between the first electrode pads 13 to 16, the second electrode pads 18a to 18d, and the third electrode pads 19a to 19d. can be placed.

For example, the first Zener diode 31a may be disposed on the second electrode pad 18a, and the upper part of the first Zener diode 31a may be electrically connected to the third electrode pad 19a using a wire 29a. The first Zener diode 31a may be disposed on the third electrode pad 19a. For example, the second Zener diode 31b may be disposed on the first electrode pad 14, and a portion of its upper portion may be electrically connected to the third electrode pad 19b using a wire 29b. The second Zener diode 31b may be disposed on the third electrode pad 19b. For example, the third Zener diode 31c may be disposed on the first electrode pad 15, and the upper part of the third Zener diode 31c may be electrically connected to the third electrode pad 19c using a wire 29c. The third Zener diode 31c may be disposed on the third electrode pad 19c. For example, the fourth Zener diode 31d may be disposed on the second electrode pad 18d, and the upper part of the fourth Zener diode 31d may be electrically connected to the third electrode pad 19d using a wire 29d. The fourth Zener diode 31d may be disposed on the third electrode pad 19d.

<Equivalent circuit>

As shown in FIG. 8, the first to fourth light emitting devices 25 to 28 can be driven independently. That is, the first light-emitting device 25 may emit light by the first voltage (V1), and the second light-emitting device 26 may emit light by the second voltage (V2). The third light-emitting device 27 may emit light by the third voltage (V3), and the fourth light-emitting device 28 may emit light by the fourth voltage (V4).

For example, when at least one of the first to third light emitting devices 25 to 27 is driven to emit red light, the fourth light emitting device 28 may not be driven. For example, when the fourth light emitting device 28 is driven to emit blue light, the first to third light emitting devices 25 to 27 may not be driven.

As another example, the first to fourth light emitting devices 25 to 28 may be driven simultaneously. For example, at least one of the first to fourth light emitting devices 25 to 28 may be driven to emit red light, and at the same time, the fourth light emitting device 28 may be driven to emit blue light.

The first voltage, second voltage, third voltage, and fourth voltage may have different voltage values, but may also have the same voltage value.

The voltage values of each of the first voltage, second voltage, third voltage, and fourth voltage may vary in size.

The first voltage, second voltage, third voltage, and fourth voltage may have a sinusoidal waveform voltage value or a pulse waveform voltage value.

<Optical lens>

The light emitting device package according to the embodiment may provide an optical lens 40. The optical lens 40 not only expands the direction angle of light, but also protects the plurality of light emitting elements 25 to 28 from contaminants such as external shock or external moisture.

The optical lens 40 may have a spherical upper surface. Some areas of the spherical shape may have a planar shape.

As shown in FIG. 5, the optical lens 40 may be disposed on the substrate 11. The optical lens 40 may be made of a resin material such as epoxy or a glass material.

The plurality of light emitting elements 25 to 28 may be surrounded by an optical lens 40.

The optical lens 40 may be provided with, for example, four side surfaces. That is, the optical lens 40 may be provided with a first side 401, a second side 402, a third side 403, and a fourth side (not shown) on the side. For example, the first side 401 and the second side 402 may be arranged to face each other. The third side 403 and the fourth side may be arranged to face each other.

The remaining surfaces of the optical lens 40, excluding the first to fourth sides 401 to 403, may have a round surface 409. That is, the round surface 409 is between the first side 401 and the third side 403, between the third side 403 and the second side 402, between the second side 402 and the fourth side, and It is located between the fourth side and the first side 401 and extends upward from thereto to form the upper part of the optical lens 40.

The first to fourth sides 401 to 403 may have a flat surface, that is, a plane. The first to fourth side surfaces 401 to 403 may have a hemispherical shape when viewed from the side, but this is not limited.

The first to fourth side surfaces 401 to 403 may have an inclined surface with respect to the upper surface of the substrate 11 . For example, the angle a of the inclined surface of the first to fourth side surfaces 401 to 403 may be, for example, 5° to 10° with respect to a vertical line perpendicular to the top surface of the substrate 11. When tilted within this range, the beam angle of light can be the largest.

The lower sides of the first side 401, the second side 402, the third side 403, and the fourth side may be arranged to be vertically aligned with the side surface of the substrate 11.

For example, four protruding areas 410 to 412 may be provided on the lower side of the optical lens 40. That is, a first protruding area 410, a second protruding area 411, a third protruding area 412, and a fourth protruding area (not shown) may be provided on the lower side of the optical lens 40.

For example, the first protruding area 410 may be arranged to extend outward from the round surface 409 between the first side 401 and the third side 403 on the lower side of the optical lens 40. For example, the second protruding area 411 may be arranged to extend outward from the round surface 409 between the third side 403 and the second side 402 on the lower side of the optical lens 40. For example, the third protruding area 412 may be disposed on the lower side of the optical lens 40, extending outward from the round surface 409 between the second side 402 and the fourth side surface. For example, the fourth protruding area may be disposed on the lower side of the optical lens 40, extending outward from the round surface 409 between the fourth side and the first side 401.

The lower sides of both adjacent sides of the first protruding region 410, the second protruding region 411, the third protruding region 412, and the fourth protruding region are vertically aligned with the corresponding both sides of the substrate 11. can be placed.

In summary, the center portion of the side of the substrate 11 is arranged to be vertically aligned with the lower sides of the first to fourth sides 401 to 403 of the optical lens 40, and the outer portion of the side of the substrate 11 is It may be arranged to be vertically aligned with the lower side of the side of the first to fourth protruding regions of the optical lens 40.

It may have curvature portions 415 and 416 in areas where the first to fourth side surfaces 401 to 403 and the round surface 409 contact each other. The curvature portions 415 and 416 may be formed by contacting at least one surface having a different inclination angle. The curvature of the curved portions 415 and 416 may be at least 0.5, but is not limited thereto. If it is less than 0.5, there is no distinction between the side surface and the round surface 409, so the curvature portions 415 and 416 are not formed.

Meanwhile, the light emitting device package (FIGS. 1 to 8) according to the embodiment can be applied to various light source devices.

These light source devices may include sanitary devices, plant growth devices, sterilization devices, display devices, lighting devices, head lamps, etc., depending on the industrial field.

For example, the light source device may have a plurality of light emitting device packages arranged on a circuit board (not shown). Each light emitting device package may be electrically connected to a circuit board. The light emitting device package may be a light emitting device package (FIGS. 1 to 8) according to the above-described embodiment.

The light source device may be mounted in a housing not shown.

The light source device may have a structure in which a plurality of circuit boards and a plurality of light emitting device packages are arranged on each circuit board.

The above detailed description should not be construed as restrictive in any respect and should be considered illustrative. The scope of the embodiments should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the embodiments are included in the scope of the embodiments.

10: Light emitting device package
11: substrate
11A, 11B, 11C, 11D: Areas
12A, 12B, 12C, 12D: Borderline
13, 14, 15, 16, 18a, 18b, 18c, 18d 19a, 19b, 19c, 19d, 21a, 21b, 21c, 21d, 22a, 22b, 22c, 22d: Electrode pad
23: heat sink
20a, 20b, 24a, 24b, 24c, 24d, 29a, 29b, 29c, 29d: wire
25, 26, 27, 28: Light emitting device
31a, 31b, 31c, 31d: Zener diode
33a, 33b, 33c, 33d, 34a, 34b, 34c, 34d: Via hole
40: Optical lens
50, 60: Vertical light emitting device
401, 402, 403: side
409: round face
410, 411, 412: Protruding area
415, 416: Curvature portion
501, 601: Light-emitting surface

Claims (10)

A substrate having a plurality of regions;
a plurality of first electrode pads respectively disposed in the plurality of regions;
a plurality of light emitting elements each disposed on the plurality of first electrode pads;
a plurality of second electrode pads disposed outside the plurality of first electrode pads; and
a plurality of third electrode pads disposed to be spaced apart from the plurality of first electrode pads and the plurality of second electrode pads;
Including,
The plurality of first electrode pads are,
A 1-1 electrode pad having a first thickness, and
It includes a 1-2 electrode pad having a second thickness greater than the first thickness,
The plurality of light emitting devices,
A first light emitting element disposed on the 1-1 electrode pad and having a third thickness, and
A second light emitting element disposed on the first-second electrode pad and having a fourth thickness smaller than the third thickness,
A light emitting device package wherein the light emitting surfaces of the plurality of light emitting devices have the same height with respect to the upper surface of the substrate. According to paragraph 1,
A light emitting device package in which the first light emitting device and the second light emitting device generate light of different peak wavelengths. According to paragraph 2,
The first light emitting device generates light to promote chlorophyll production in plants,
The second light emitting device is a light emitting device package that generates light to promote photosynthesis in plants. According to paragraph 1,
The first light emitting device is a light emitting device package that generates red light with a peak wavelength in the range of 600 nm to 680 nm. According to paragraph 1,
The second light emitting device is a light emitting device package that generates blue light with a peak wavelength in the range of 400 nm to 470 nm. According to paragraph 1,
The plurality of first electrode pads further include a 1-3 electrode pad and a 1-4 electrode pad adjacent to the 1-1 electrode pad and the 1-2 electrode pad,
A light emitting device package in which a third light emitting device and a fourth light emitting device of the plurality of light emitting devices are respectively disposed on the 1-3 electrode pad and the 1-4 electrode pad. According to paragraph 1,
A light emitting device package wherein the difference between the thickness of the first light emitting device and the thickness of the second light emitting device is equal to the difference between the thickness of the 1-2 electrode pad and the thickness of the 1-1 electrode pad. According to paragraph 1,
A light emitting device package wherein the first and second light emitting devices include different types of vertical light emitting devices. According to paragraph 1,
The first-second electrode pad on which the second light emitting device is disposed has the smallest area among the plurality of first electrode pads. According to paragraph 1,
Optical lenses disposed on the plurality of light emitting devices;
A light emitting device package further comprising:

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