KR102520154B1 - Nanorod structure using gallium oxide nano thin film trowth technology and method of manufacturing thereof - Google Patents

Abstract

As a technology for continuously depositing gallium oxide nano-films on nanorod-based optical or electronic devices, it is a gallium oxide nano-thin film selectively grown on the top, bottom, or in the coaxial and uniaxial directions of the nanorod devices. A nanorod structure using growth technology and a method for manufacturing the same are disclosed.
A method for manufacturing a nanorod structure using gallium oxide nano-thin film growth technology according to the present invention includes the steps of (a) forming GaN nanorods on one surface of a substrate; and (b) forming a gallium oxide nano-thin film layer grown to cover only the top surface of the GaN nanorods, wherein, in step (b), the gallium oxide nano-thin film layer is heated from an initial growth temperature to a final growth temperature. It is characterized by growing by gradually increasing the growth temperature as it goes.

Description

Nanorod structure using gallium oxide nano-thin film growth and its manufacturing method

The present invention relates to a nanorod structure using gallium oxide nano-thin film growth technology and a method for manufacturing the same, and more particularly, to a technique for continuously depositing a gallium oxide nano-thin film on a nanorod-based optical device or electronic device, It relates to a nanorod structure using a gallium oxide nano-thin film growth technology selectively grown in the upper, lower, or coaxial and uniaxial directions of a device and a method for manufacturing the same.

Semiconductor optoelectronic devices that can emit light of various colors by forming a light emitting source through recombination of electrons and holes at the p-n junction of a semiconductor have a long lifespan, can be miniaturized and lightened, and can be driven at low voltage due to excellent directivity of light. possible. In addition, semiconductor optoelectronic devices are resistant to shock and vibration, do not require preheating time and complicated driving, and can be packaged in various forms, so that they can be applied for various purposes.

Therefore, research and development on semiconductor light emitting devices are being actively conducted, and among them, gallium (Ga), aluminum (Al), indium (In), etc., which have excellent thermal stability and have a direct transition energy band structure. Recently, research on nitride semiconductor optoelectronic devices using nitrides containing group 3 elements has been actively researched and developed.

As a related prior literature, there is Korean Patent Publication No. 10-2010-0047577 (published on May 10, 2010), which describes an electronic device having a metal oxide nanostructure, a manufacturing method thereof, and an electronic device having the same there is.

An object of the present invention is a technology for continuously depositing a gallium oxide nano-thin film on a nanorod-based optical or electronic device, wherein the nanorod device is selectively grown in the top, bottom, or coaxial and uniaxial directions. It is to provide a nanorod structure using a gallium oxide nano-thin film growth technology and a manufacturing method thereof.

To achieve the above object, a method for manufacturing a nanorod structure using a gallium oxide nano-thin film growth technique according to a first embodiment of the present invention includes the steps of (a) forming GaN nanorods on one surface of a substrate; and (b) forming a gallium oxide nano-thin film layer grown to cover only the top surface of the GaN nanorods, wherein, in step (b), the gallium oxide nano-thin film layer is heated from an initial growth temperature to a final growth temperature. It is characterized by growing by gradually increasing the growth temperature as it goes.

In step (a), the GaN nanorods have a length of 10 to 100,000 nm.

In step (b), the gallium oxide nano-thin film layer is grown using any one of Molecular Beam Epitaxy, Metal Organic Chemical Vapor Deposition, and Hydrogen Vapor Phase Epitaxy let it

In step (b), the growth pressure is maintained at 20 to 600 torr.

In the step (b), the initial growth temperature is preferably 500 ~ 900 ℃, the final growth temperature is 600 ~ 1,000 ℃.

It is raised from the initial growth temperature to the final growth temperature at a rate of 0.01 to 50 °C/min.

After the step (b), the gallium oxide nano-thin film layer has a thickness of 1 to 5,000 nm.

To achieve the above object, a method for manufacturing a nanorod structure using gallium oxide nano-thin film growth technology according to a second embodiment of the present invention includes the steps of (a) forming GaN nanorods on one surface of a substrate; and (b) forming a gallium oxide nano-thin film layer grown to cover the upper, lower and side surfaces of the GaN nanorod, wherein, in the step (b), the gallium oxide nano-thin film layer is formed from an initial growth temperature. It is characterized by growing at the same growth temperature until the final growth temperature.

In step (a), the GaN nanorods have a length of 10 to 100,000 nm.

In step (b), the growth pressure is maintained at 20 to 600 torr.

In the step (b), the initial growth temperature and the final growth temperature are maintained at 500 to 1,000 ° C.

After the step (b), the gallium oxide nano-thin film layer has a thickness of 1 to 5,000 nm.

To achieve the above object, the nanorod structure using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention includes a substrate; GaN nanorods formed on one surface of the substrate; and a gallium oxide nano-thin film layer laminated only on the top portion of the surface of the GaN nanorod.

The GaN nanorods have a length of 10 to 100,000 nm.

The gallium oxide nano-thin film layer has a thickness of 1 to 5,000 nm.

To achieve the above object, the nanorod structure using the gallium oxide nano-thin film growth technology according to the second embodiment of the present invention includes a substrate; GaN nanorods formed on one surface of the substrate; and a gallium oxide nano-thin layer formed to cover upper, lower and side surfaces of the GaN nanorods.

The GaN nanorods have a length of 10 to 100,000 nm.

The gallium oxide nano-thin film layer has a thickness of 1 to 5,000 nm.

A nanorod structure using a gallium oxide nano-thin film growth technology and a method for manufacturing the same according to the present invention is a technology for continuously depositing a gallium oxide nano-thin film on a nanorod-based optical device or electronic device. It is possible to grow selectively in a coaxial direction and a uniaxial direction.

Therefore, when a photodiode is manufactured using the gallium oxide nano-thin film growth technology according to the present invention, it can be used as an electron blocking layer (EBL) using the wide band gap of gallium oxide, and the difference in refractive index can be reduced. It can be used to increase the efficiency of light induction and light extraction.

In addition, when a light-receiving diode is manufactured using the gallium oxide nano-thin film growth technology according to the present invention, it can be used as a UV-C absorbing layer utilizing a wide band gap of gallium oxide.

In addition, when electronic devices such as PN diodes, PIN diodes, FETs, and MOSFETs are manufactured using the gallium oxide nano-thin film growth technology according to the present invention, a reverse current prevention layer using a wide band gap, an n-type thin film layer in a high voltage device It is possible to use it as

1 is a perspective view showing a nanorod structure using a gallium oxide nano-thin film growth technology according to a first embodiment of the present invention.
2 is a schematic process diagram for explaining a method of manufacturing a nanorod structure using a gallium oxide nano-thin film growth technology according to a first embodiment of the present invention.
3 is a photograph showing a nanorod structure manufactured using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention.
4 is a perspective view showing a nanorod structure using a gallium oxide nano-thin film growth technology according to a second embodiment of the present invention.
5 is a schematic process diagram for explaining a method of manufacturing a nanorod structure using a gallium oxide nano-thin film growth technology according to a second embodiment of the present invention.
6 is a photograph showing a nanorod structure manufactured using a gallium oxide nano-thin film growth technology according to a second embodiment of the present invention.
7 to 13 are views showing application examples of the gallium oxide nano-thin film growth technology according to the first and second embodiments of the present invention.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention belongs. It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

Hereinafter, a nanorod structure using gallium oxide nano-thin film growth technology and a manufacturing method thereof according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view showing a nanorod structure using a gallium oxide nano-thin film growth technology according to a first embodiment of the present invention.

As shown in FIG. 1, the nanorod structure 100 using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention includes a substrate 120, a GaN nano-rod 140, and a gallium oxide nano-thin film layer 160. ).

The substrate 120 may have a plate shape having one side and the other side opposite to the one side, but this is exemplary and the shape may be variously changed.

At this time, the substrate 120 includes silicon (Si), sapphire (Al ₂ O ₃ ), glass, silicon carbide (SiC), gallium oxide (Al ₂ O ₃ ), sapphire on which GaN is deposited (GaN on Sapphire), InGaN Any one of deposited sapphire (InGaN on sapphire), AlGaN deposited sapphire (AlGaN on sapphire), and AlN deposited sapphire (AlN on sapphire) may be used.

The GaN nanorods 140 are formed on one surface of the substrate 120 . The GaN nanorods 140 may be formed by growth using Molecular Beam Epitaxy or Metal Organic Chemical Vapor Deposition at a growth temperature of 300 to 1,200 °C. The GaN nanorods 140 preferably have a length of 10 to 100,000 nm.

The GaN nanorod 140 may be made of n-type GaN doped with Si as an n-type dopant in order to be used as an n-type semiconductor layer. In addition, the GaN nanorod 140 may be made of p-type GaN doped with Mg as a p-type dopant in order to be used as a p-type semiconductor layer.

In the present invention, it has been shown that the GaN nanorods 140 are applied, but it is not limited thereto. That is, instead of the GaN nanorods 140, it is possible to apply the same to semiconductor devices in the form of nanorods such as ZnO and GaAs.

In addition, the nanorod structure 100 using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention may further include a mask layer 180 covering one surface of the substrate 120 . In this case, the mask layer 180 may be omitted if necessary.

The mask layer 180 may include one or more of SiOx, SiNx, Al, Ni, Ti, and Mo. Here, 1 ≤ x ≤ 3. In this case, the mask layer 180 may have a thickness of 0.01 to 800 nm. The mask layer 180 may be formed to cover the entire surface of the substrate 120 except for the GaN nanorods 140, but is not limited thereto.

The gallium oxide nano-thin film layer 160 is laminated only on the upper portion of the GaN nanorod 140 surface.

The gallium oxide nano-thin film layer 160 may be formed in at least one of intrinsic, n-type and p-type. For example, the gallium oxide nano-thin film layer 160 may be formed of n-type Ga ₂ O ₃ doped with at least one of Si and Sn as an n-type dopant to be used as an n-type semiconductor layer. In addition, the gallium oxide nano-thin film layer 160 may be formed of p-type Ga ₂ O ₃ doped with at least one of Mg and N as a p-type dopant in order to be used as a p-type semiconductor layer.

At this time, in order to form the gallium oxide nano-thin film layer 160 so as to cover only the upper surface of the GaN nanorod 140, the gallium oxide nano-thin film layer 160 of the present invention gradually increases the growth temperature from the initial growth temperature to the final growth temperature. rose and grew.

In this way, in order to grow a thick gallium oxide nano-thin film only on the upper surface of the GaN nano-rod 140, the growth temperature must be continuously raised to a temperature higher than the initial growth temperature to form a gallium oxide nano-thin film on the lower surface of the GaN nano-rod 140. This growth can be suppressed, while the growth of the gallium oxide nano-thin film can be continuously induced only on the upper surface of the GaN nanorod 140.

The gallium oxide nano-thin film layer 160 formed only on the upper surface of the GaN nanorod 140 may be variously formed to a thickness of 1 to 5,000 nm.

This will be described in more detail through the method of manufacturing a nanorod structure using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention.

2 is a schematic process diagram for explaining a method of manufacturing a nanorod structure using a gallium oxide nano-thin film growth technology according to a first embodiment of the present invention.

Referring to FIG. 2 , the method for manufacturing a nanorod structure using the gallium oxide nano-thin film growth technique according to the first embodiment of the present invention may include forming a GaN nanorod and forming a gallium oxide nano-thin film layer.

As shown in (a) of FIG. 2 , in the step of forming the GaN nanorods, the GaN nanorods 140 are formed on one surface of the substrate 120 .

Here, the substrate 120 may have a plate shape having one side and the other side opposite to the one side, but this is exemplary and the shape may be variously changed.

At this time, the substrate 120 includes silicon (Si), sapphire (Al ₂ O ₃ ), glass, silicon carbide (SiC), gallium oxide (Al ₂ O ₃ ), sapphire on which GaN is deposited (GaN on Sapphire), InGaN Any one of deposited sapphire (InGaN on sapphire), AlGaN deposited sapphire (AlGaN on sapphire), and AlN deposited sapphire (AlN on sapphire) may be used.

The GaN nanorods 140 may be formed by growth using Molecular Beam Epitaxy or Metal Organic Chemical Vapor Deposition at a growth temperature of 300 to 1,200 °C. If the growth temperature is less than 300 ℃, there is a problem that the growth rate is lowered due to the low temperature. Conversely, when the growth temperature exceeds 1,200 ° C., it is not economical because it may act as a factor that only increases manufacturing cost without further increasing the effect.

The GaN nanorods 140 preferably have a length of 10 to 100,000 nm.

In this step, the GaN nanorod 140 may be made of n-type GaN doped with Si with an n-type dopant in order to be used as an n-type semiconductor layer. In addition, the GaN nanorod 140 may be made of p-type GaN doped with Mg as a p-type dopant in order to be used as a p-type semiconductor layer.

In addition, a step of forming a mask layer 180 on one surface of the substrate 120 may be further included before the step of forming the GaN nanorods. In this case, the mask layer 180 may be omitted if necessary.

The mask layer 180 is formed by sputtering, E-beam vacuum deposition, molecular beam epitaxy, and organometallic chemical vapor deposition of at least one of SiOx, SiNx, Al, Ni, Ti, and Mo ( Metal Organic Chemical Vapor Deposition). Here, 1 ≤ x ≤ 3. In this case, the mask layer 180 may be formed to a thickness of 0.01 to 800 nm.

The mask layer 180 may be formed to cover the entire surface of the substrate 120 except for the GaN nanorods 140, but is not limited thereto.

Next, as shown in (b) of FIG. 2 , in the step of forming the gallium oxide nano-thin film layer, the gallium oxide nano-thin film layer 160 grown to cover only the top surface of the GaN nanorod 140 is formed.

The gallium oxide nano-thin film layer 160 may be formed in at least one of intrinsic, n-type and p-type. For example, the gallium oxide nano-thin film layer 160 may be formed of n-type Ga ₂ O ₃ doped with at least one of Si and Sn as an n-type dopant to be used as an n-type semiconductor layer. In addition, the gallium oxide nano-thin film layer 160 may be formed of p-type Ga ₂ O ₃ doped with at least one of Mg and N as a p-type dopant in order to be used as a p-type semiconductor layer.

In this step, in order to form the gallium oxide nano-thin film layer 160 so as to cover only the upper surface of the GaN nanorods 140, it is preferable to gradually increase the growth temperature from the initial growth temperature to the final growth temperature.

The gallium oxide nano-thin film layer 160 is preferably grown using any one of Molecular Beam Epitaxy, Metal Organic Chemical Vapor Deposition, and Hydrogen Vapor Phase Epitaxy. . At this time, the growth pressure is preferably maintained at 20 to 600 torr.

In the step of forming the gallium oxide nano-thin film layer, the initial growth temperature is preferably 500 to 900°C, and the final growth temperature is preferably 600 to 1,000°C higher than the initial growth temperature.

In particular, it is preferable to raise the temperature from the initial growth temperature to the final growth temperature at a rate of 0.01 to 50° C./min, more preferably at a rate of 5 to 20° C./min. Here, when the growth rate from the initial growth temperature to the final growth temperature is raised to a range outside of 0.01 to 50 °C/min, gallium oxide nano-thin films are grown on the upper surface as well as the lower and side surfaces of the GaN nanorods 140. can cause problems.

In this way, in order to grow a thick gallium oxide nano-thin film only on the upper surface of the GaN nanorods 140, the growth temperature on the lower surface of the GaN nanorods 140 must be continuously raised to a temperature higher than the initial growth temperature to suppress the growth of the GaN nanorods 140. While doing so, it is possible to continuously induce growth only on the upper surface of the GaN nanorods 140 .

Accordingly, after the step of forming the gallium oxide nano-thin film layer, the gallium oxide nano-thin film layer 160 formed only on the surface of the GaN nanorod 140 may be variously formed to a thickness of 1 to 5,000 nm.

At this time, FIG. 3 is a photograph showing a nanorod structure manufactured using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention.

As shown in FIG. 3, by continuously raising the growth temperature to a temperature higher than the initial growth temperature, the growth of the gallium oxide nano-thin film under the surface of the GaN nanorod 140 is suppressed, and the GaN nanorod 140 ) It can be confirmed that the growth is made only on the upper surface of the surface of the gallium oxide nano-thin film layer 160 is formed.

As such, in the present invention, in order to form the gallium oxide nano-thin film layer 160 to cover only the upper surface of the GaN nanorod 140, it is confirmed that the growth temperature should be gradually increased from the initial growth temperature to the final growth temperature. did

Meanwhile, FIG. 4 is a perspective view showing a nanorod structure using a gallium oxide nano-thin film growth technology according to a second embodiment of the present invention.

Referring to FIG. 4 , the nanorod structure 200 using the gallium oxide nano-thin film growth technology according to the second embodiment of the present invention includes a substrate 220, a GaN nano-rod 240, and a gallium oxide nano-thin film layer 260. include The substrate 220 and the GaN nanorods 240 according to the second embodiment of the present invention are substantially similar to the substrate (120 in FIG. 1) and the GaN nanorods (140 in FIG. 1) according to the first embodiment of the present invention. Since they are the same, redundant descriptions will be omitted and description will focus on the differences.

The gallium oxide nano-thin film layer 260 according to the second embodiment of the present invention is formed to cover the upper, lower and side surfaces of the GaN nanorods 240 .

The gallium oxide nano-thin film layer 260 may be formed in any one or more of intrinsic, n-type and p-type forms. For example, the gallium oxide nano-thin film layer 260 may be formed of n-type Ga ₂ O ₃ doped with at least one of Si and Sn as an n-type dopant to be used as an n-type semiconductor layer. In addition, the gallium oxide nano-thin film layer 260 may be formed of p-type Ga ₂ O ₃ doped with at least one of Mg and N as a p-type dopant in order to be used as a p-type semiconductor layer.

At this time, in order to form the gallium oxide nano-thin film layer 260 to cover the entire upper, lower and side surfaces of the GaN nanorods 240, the GaN nanorods ( 240), coaxial growth can be induced without excessive growth being induced onto the surface. Accordingly, the gallium oxide nano-thin film layer 260 covers the upper, lower, and side surfaces of the GaN nanorods 240, and the upper and side surfaces have the same or similar thickness.

Therefore, after the step of forming the gallium oxide nano-thin film layer, the gallium oxide nano-thin film layer 260 formed to cover the upper, lower and side surfaces of the GaN nanorods 240 may be variously formed to a thickness of 1 to 5,000 nm.

This will be described in more detail through the method of manufacturing a nanorod structure using the gallium oxide nano-thin film growth technology according to the second embodiment of the present invention.

5 is a schematic process diagram for explaining a method of manufacturing a nanorod structure using a gallium oxide nano-thin film growth technology according to a second embodiment of the present invention.

Referring to FIG. 5 , the method for manufacturing a nanorod structure using the gallium oxide nano-thin film growth technique according to the second embodiment of the present invention may include forming a GaN nano-rod and forming a gallium oxide nano-thin film layer.

As shown in (a) of FIG. 5 , in the step of forming the GaN nanorods, GaN nanorods 240 are formed on one surface of the substrate 220 .

Since the step of forming GaN nanorods according to the second embodiment of the present invention is substantially the same as the step of forming GaN nanorods according to the first embodiment, redundant description will be omitted.

Next, as shown in (b) of FIG. 5, in the step of forming the gallium oxide nano-thin film layer, a gallium oxide nano-thin film layer 260 is formed to cover the upper, lower and side surfaces of the GaN nanorods 240. .

The gallium oxide nano-thin film layer 260 may be grown in any one or more of intrinsic, n-type and p-type forms. For example, the gallium oxide nano-thin film layer 260 may be formed of n-type Ga ₂ O ₃ doped with at least one of Si and Sn as an n-type dopant to be used as an n-type semiconductor layer. In addition, the gallium oxide nano-thin film layer 260 may be formed of p-type Ga ₂ O ₃ doped with at least one of Mg and N as a p-type dopant in order to be used as a p-type semiconductor layer.

In this step, it is preferable to grow at the same growth temperature from the initial growth temperature to the final growth temperature in order to form the gallium oxide nano-thin film layer 260 by growing to cover the upper, lower and side surfaces of the GaN nanorods 240. do.

The gallium oxide nano-thin film layer 260 is preferably grown using any one of Molecular Beam Epitaxy, Metal Organic Chemical Vapor Deposition, and Hydrogen Vapor Phase Epitaxy. . At this time, the growth pressure is preferably maintained at 20 to 600 torr.

In the step of forming the gallium oxide nano-thin film layer, the initial growth temperature and the final growth temperature should be kept the same at 500 to 1,000°C.

In this way, in order to form the gallium oxide nano-thin film layer 260 to cover the entire upper, lower and side surfaces of the GaN nanorods 240, the GaN nanorods must be continuously grown at the same temperature from the initial growth temperature to the final growth temperature. Over the surface of 240, excessive growth is not induced, and coaxial growth can be induced. Accordingly, the gallium oxide nano-thin film layer 260 covers the upper, lower and side surfaces of the surface of the GaN nanorods 240, and the upper and side surfaces have the same or similar thickness.

Accordingly, after the step of forming the gallium oxide nano-thin film layer, the gallium oxide nano-thin film layer 260 formed to cover the upper, lower and side surfaces of the surface of the GaN nanorod 240 may be variously formed to a thickness of 1 to 5,000 nm.

At this time, FIG. 6 is a photograph showing a nanorod structure manufactured using the gallium oxide nano-thin film growth technology according to the second embodiment of the present invention.

As shown in FIG. 6, by continuously growing at the same temperature from the initial growth temperature to the final growth temperature, excessive growth is not induced to the upper surface of the GaN nanorods 240, and coaxial growth is achieved. induction can be confirmed. Accordingly, it can be confirmed that the gallium oxide nano-thin film layer 260 covers the upper, lower, and side surfaces of the surface of the GaN nanorods 240, and the upper and side surfaces have the same or similar thickness.

As described above, in the present invention, in order to form the gallium oxide nano-thin film layer 260 covering the upper, lower and side surfaces of the GaN nanorods 240, the gallium oxide nano-thin film layer 260 is the same from the initial growth temperature to the final growth temperature. It was confirmed that it should be continuously grown at the temperature.

Meanwhile, FIGS. 7 to 13 are diagrams showing application examples of the gallium oxide nano-thin film growth technology according to the first and second embodiments of the present invention.

First, as shown in FIG. 7, an optical device 300 using a gallium oxide nano-thin film growth technique according to a second embodiment of the present invention is shown.

In such an optical device 300, the GaN nanorod optical structure 340 is disposed on a substrate 320, and the n-type Ga ₂ O ₃ nanoparticles cover the entire bottom and side surfaces of the GaN nanorod optical structure 340. A thin film layer 360 is disposed. Here, the optical device 300 may further include an insulating layer 350 disposed to cover sidewalls and upper surfaces between the GaN nanorod optical structure 340 and the n-type Ga ₂ O ₃ nanothin film layer 360. .

At this time, the n-type Ga ₂ O ₃ nano-thin film layer 360 is formed by using the gallium oxide nano-thin film growth technology according to the second embodiment of the present invention to form the entire top, bottom and side surfaces of the GaN nanorod optical structure 340. After forming to cover, only the n-type Ga ₂ O ₃ nano-thin film layer 360 located on the surface of the GaN nanorod optical structure 340 is selectively etched and removed. Accordingly, the n-type Ga ₂ O ₃ nano-thin film layer 360 may be formed to cover only the bottom and side surfaces of the GaN nanorod optical structure 340 .

In addition, as shown in FIG. 8, a semiconductor light emitting device 400 using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention is shown.

At this time, the semiconductor light emitting device 400 includes a first n-type GaN layer 410, an active layer 420, a p-type GaN layer 430, an electron blocking layer 460, and a second n-type GaN layer 440. This in turn may have a vertically stacked structure.

Each of the first n-type GaN layer 410 and the second n-type GaN layer 440 may be made of GaN doped with Si, and the p-type GaN layer 430 may be made of GaN doped with Mg. , but is not limited thereto.

The active layer 420 may have a multi-quantum well structure by including a quantum barrier layer made of GaN and a quantum well layer made of InGaN. The active layer of the multi-quantum well structure can suppress spontaneous polarization due to stress and strain.

At this time, the electron blocking layer 460 is laminated only on the upper portion of the surface of the p-type GaN layer 430 using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention. The electron blocking layer 460 may be made of Ga ₂ O ₃ , but is not limited thereto.

In addition, as shown in FIGS. 9 and 10 , UV-C photodetectors 500 and 600 using gallium oxide nano-thin film growth technology according to the first and second embodiments of the present invention are shown.

First, in the UV-C photodetector 500 shown in FIG. 9, p-type GaN nanorods 540 are disposed on a substrate 520, and the upper, lower and lower surfaces of the p-type GaN nanorods 540 are An n-type Ga ₂ O ₃ nano-thin film layer 560 is disposed to cover the entire side surface.

As such, in the UV-C photodetector 500 using the gallium oxide nano-thin film growth technology according to the second embodiment of the present invention, the n-type Ga ₂ O ₃ nano-thin film layer 560 is formed in the coaxial direction. can

In addition, in the UV-C photodetector 600 shown in FIG. 10 , p-type GaN nanorods 640 are disposed on a substrate 620, and n- The type Ga ₂ O ₃ nano-thin film layer 660 is arranged to be stacked.

As such, in the UV-C photodetector 600 using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention, an n-type Ga ₂ O ₃ nano-thin film layer may be formed in a uniaxial direction.

Meanwhile, as shown in FIGS. 11 to 13, electronic devices 700, 800, and 900 using the gallium oxide nano-thin film growth technology according to the first and second embodiments of the present invention are shown.

First, in the electronic device 700 shown in FIG. 11, p-type GaN nanorods 740 are disposed on a substrate 720, and the entire top, bottom, and side surfaces of the p-type GaN nanorods 740 are covered. An n-type Ga ₂ O ₃ nano-thin film layer 760 is disposed to cover it.

In this way, the electronic device 700 using the gallium oxide nano-film growth technology according to the second embodiment of the present invention is coaxial to cover the entire top, bottom and side surfaces of the p-type GaN nanorod 740. By having a PN junction structure in which the n-type Ga ₂ O ₃ nano-thin film layer 760 is formed, it can be utilized as a high-power device.

In addition, in the electronic device 800 shown in FIG. 12, p-type GaN nanorods 840 are disposed on a substrate 820, and n-type Ga ₂ The O ₃ nano-thin film layer 860 is arranged to be stacked.

In this way, the electronic device 800 using the gallium oxide nano-film growth technology according to the first embodiment of the present invention is n-type Ga ₂ O ₃ in the uniaxial direction above the p-type GaN nanorod 840. By having a PN junction structure in which the nano-thin film layer 860 is stacked, it can be used as a high-power device.

In addition, the electronic device 900 shown in FIG. 13 includes a first p-type GaN nanorod 942, an n-type Ga ₂ O ₃ nano-thin film layer 960 and a second p-type GaN on a substrate 920. The nanorods 944 may have a structure in which the nanorods 944 are sequentially stacked vertically. In addition, the electronic device 900 includes an insulating layer covering sidewalls of the first p-type GaN nanorods 942, the n-type Ga ₂ O ₃ nano-thin film layer 960, and the second p-type GaN nanorods 944. (950) may be further included.

In this way, the electronic device 900 using the gallium oxide nano-thin film growth technology according to the first embodiment of the present invention has a first p-type GaN between the first and second p-type GaN nanorods 942 and 944. The nanorod 942 may be used as a MOSFET or BJT diode power device in which the n-type Ga ₂ O ₃ nano-thin film layer 960 is formed in a uniaxial direction only on the upper surface of the nanorod 942 .

As described so far, the nanorod structure using the gallium oxide nano-thin film growth technology and the manufacturing method according to the embodiments of the present invention are a technology for continuously depositing a gallium oxide nano-thin film on a nanorod-based optical device or electronic device. As a result, it is possible to selectively grow the nanorod element in the upper, lower, or coaxial direction and uniaxial direction.

Therefore, when a photodiode is manufactured using the gallium oxide nano-thin film growth technology according to embodiments of the present invention, it can be used as an electron blocking layer (EBL) using a wide band gap of gallium oxide. , it can be utilized to increase light induction and light extraction efficiency using the difference in refractive index.

In addition, when a light-receiving diode is manufactured using the gallium oxide nano-thin film growth technology according to embodiments of the present invention, it can be used as a UV-C absorbing layer utilizing a wide band gap of gallium oxide.

In addition, when electronic devices such as PN diodes, PIN diodes, FETs, and MOSFETs are manufactured using the gallium oxide nano-thin film growth technology according to embodiments of the present invention, in reverse current prevention layers and high-voltage devices using a wide bandgap It is possible to utilize it as an n-type thin film layer.

As described above, when the present invention utilizes a technology for continuously depositing a gallium oxide nano-thin film on a nanorod-based optoelectronic device, the upper, lower, or coaxial and uniaxial directions of the nanorod-based optoelectronic device Selective growth is possible.

This technology can expand the efficiency and utilization of existing nanorod-based optoelectronic devices by depositing a gallium oxide nano-thin film with a wide bandgap of about 5.0 eV or more in a desired shape in addition to the nanorod-based optoelectronic devices.

In particular, by utilizing a wide band gap, the present invention is a light receiving device in the UV C region, which is a limitation of optoelectronic devices based on existing ZnO or GaN (a material having a band gap of about 3 eV) nanorods, or a high voltage device that can withstand higher voltages. It may be possible to use .

In addition, since the nanorod structure manufactured by the method according to the embodiment of the present invention has a low refractive index of 1.9 or less, it has a structural advantage of maximizing light induction and extraction efficiency when applied as an optical device. .

Although the above has been described based on the embodiments of the present invention, various changes or modifications may be made at the level of a technician having ordinary knowledge in the technical field to which the present invention belongs. Such changes and modifications can be said to belong to the present invention as long as they do not deviate from the scope of the technical idea provided by the present invention. Therefore, the scope of the present invention will be determined by the claims described below.

100, 200: nanorod structure
120, 220: substrate
140, 240: GaN nanorod
160, 260: gallium oxide nano-thin film layer
180, 280: mask layer

Claims (18)

(a) forming GaN nanorods on one surface of a substrate; and
(b) forming a gallium oxide nano-thin film layer grown to cover only the upper surface of the GaN nanorods;
In step (b), the gallium oxide nano-thin film layer is grown by gradually increasing the growth temperature from the initial growth temperature to the final growth temperature.
According to claim 1,
In step (a),
The GaN nanorods
A method for manufacturing a nanorod structure using gallium oxide nano-thin film growth technology, characterized in that it has a length of 10 to 100,000 nm.
According to claim 1,
In step (b),
The gallium oxide nano-thin film layer is
Using gallium oxide nano-thin film growth technology characterized in that it is grown using any one of epitaxial method (Molecular Beam Epitaxy), Metal Organic Chemical Vapor Deposition (Hydride vapor phase epitaxy) A method for manufacturing a nanorod structure.
According to claim 1,
In step (b),
A method for manufacturing a nanorod structure using gallium oxide nano-thin film growth technology, characterized in that the growth pressure is maintained at 20 to 600 torr.
According to claim 1,
In step (b),
The initial growth temperature is 500 ~ 900 ℃,
The nanorod structure manufacturing method using gallium oxide nano-thin film growth technology, characterized in that the final growth temperature is 600 ~ 1,000 ℃.
According to claim 5,
A nanorod structure manufacturing method using gallium oxide nano-thin film growth technology, characterized in that the initial growth temperature to the final growth temperature is raised at a rate of 0.01 to 50 ° C / min.
According to claim 1,
After step (b),
The gallium oxide nano-thin film layer is
A method for manufacturing a nanorod structure using gallium oxide nano-thin film growth technology, characterized in that it has a thickness of 1 to 5,000 nm.
(a) forming GaN nanorods on one surface of a substrate; and
(b) forming a gallium oxide nano-thin film layer grown to cover the upper, lower and side surfaces of the GaN nanorods;
In step (b), the gallium oxide nano-thin film layer is grown at the same growth temperature from the initial growth temperature to the final growth temperature.
According to claim 8,
In step (a),
The GaN nanorods
A method for manufacturing a nanorod structure using gallium oxide nano-thin film growth technology, characterized in that it has a length of 10 to 100,000 nm.
According to claim 8,
In step (b),
A method for manufacturing a nanorod structure using gallium oxide nano-thin film growth technology, characterized in that the growth pressure is maintained at 20 to 600 torr.
According to claim 8,
In step (b),
The initial growth temperature and the final growth temperature are
A method for manufacturing a nanorod structure using gallium oxide nano-thin film growth technology, characterized in that the temperature is maintained at 500 to 1,000 ° C.
According to claim 8,
After step (b),
The gallium oxide nano-thin film layer is
A method for manufacturing a nanorod structure using gallium oxide nano-thin film growth technology, characterized in that it has a thickness of 1 to 5,000 nm.
A nanorod structure using gallium oxide nano-thin film growth technology manufactured by the manufacturing method according to any one of claims 1 to 7,
The nanorod structure using the gallium oxide nano-thin film growth technology is
Board;
GaN nanorods formed on one surface of the substrate; and
A gallium oxide nano-thin film layer formed only on the upper end of the surface of the GaN nanorod;
The gallium oxide nano-thin film layer is grown using any one of epitaxial method (Molecular Beam Epitaxy), Metal Organic Chemical Vapor Deposition (Hydride vapor phase epitaxy),
The gallium oxide nano-thin film layer is grown by gradually increasing the growth temperature from the initial growth temperature to the final growth temperature, so that the growth of the gallium oxide nano-thin film on the lower surface of the GaN nanorod is suppressed, and the upper side of the GaN nanorod formed only on the surface,
The nanorod structure using gallium oxide nano-thin film growth technology, characterized in that the gallium oxide nano-thin film layer has a thickness of 1 to 5,000 nm.
According to claim 13,
The GaN nanorods
A nanorod structure using gallium oxide nano-thin film growth technology, characterized in that it has a length of 10 to 100,000 nm.
delete A nanorod structure using gallium oxide nano-thin film growth technology manufactured by the manufacturing method according to any one of claims 8 to 12,
The nanorod structure using the gallium oxide nano-thin film growth technology is
Board;
GaN nanorods formed on one surface of the substrate; and
A gallium oxide nano-thin film layer formed to cover upper, lower and side surfaces of the GaN nanorods;
The gallium oxide nano-thin film layer is grown using any one of epitaxial method (Molecular Beam Epitaxy), Metal Organic Chemical Vapor Deposition (Hydride vapor phase epitaxy),
The gallium oxide nano-thin film layer is formed to cover the top, bottom and side surfaces of the GaN nanorod surface with the same thickness by growing at the same growth temperature from the initial growth temperature to the final growth temperature,
The nanorod structure using gallium oxide nano-thin film growth technology, characterized in that the gallium oxide nano-thin film layer has a thickness of 1 to 5,000 nm.
According to claim 16,
The GaN nanorods
A nanorod structure using gallium oxide nano-thin film growth technology, characterized in that it has a length of 10 to 100,000 nm.
delete

Images