KR102373082B1 - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

An organic light emitting display device according to an embodiment of the present invention is provided. An organic light emitting diode display includes a substrate defined by a display area and a pad area, a thin film transistor positioned on the substrate in the display area, and an active layer, a gate electrode, and a source electrode and a drain electrode, and electrically connected to the thin film transistor, and at least It is positioned on the substrate in an anode and a pad region comprising two conductive layers, and includes a pad electrode comprising a plurality of conductive layers, wherein the first conductive layer of the pad electrode is made of the same material as the source electrode and the drain electrode, The second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer.

Description

Organic light emitting display device and organic light emitting display manufacturing method

The present invention relates to an organic light emitting display device and a method of manufacturing an organic light emitting display device, and more particularly, to an organic light emitting display device including a pad electrode having improved reliability and a method of manufacturing the organic light emitting display device.

The organic light emitting diode display (OLED) is a self-emission type display device, and unlike a liquid crystal display device (LCD), it does not require a separate light source, so it can be manufactured in a lightweight and thin form. In addition, the organic light emitting diode display is being studied as a next-generation display because it is advantageous in terms of power consumption due to low voltage driving, and has excellent color realization, response speed, viewing angle, and contrast ratio (CR).

The organic light emitting display device includes a top emission type organic light emitting display device, a bottom emission type organic light emitting display device, and a double-sided emission type organic light emitting diode display according to the emission direction of light emitted from the organic light emitting device. It is classified as a display device.

In a top-emission organic light emitting diode display, the anode is preferably formed of a conductive material having excellent reflection characteristics and an appropriate work function. However, since there is currently no single applicable material that satisfies these characteristics at the same time, the anode of the top emission type organic light emitting display device is composed of a multilayer structure of conductive layers, for example, indium tin oxide (ITO). The layer, the silver alloy (Ag alloy) layer, and the ITO layer is configured in a stacked structure. Accordingly, the light emitted from the organic light emitting layer of the organic light emitting device is reflected by the silver alloy layer, thereby realizing a top emission type organic light emitting display device.

Meanwhile, a pad electrode of a typical organic light emitting diode display is an electrode that is bonded to an external module to receive an electrical signal from the external module or output an electrical signal to the external module. The uppermost layer of the pad electrode of a typical top emission type organic light emitting diode display is formed of the same material as the anode. Specifically, the pad electrode has a structure in which an electrode formed of the same material as the anode is formed on an electrode formed of the same material as the source electrode and the drain electrode of the thin film transistor.

Here, a layer formed of the same material as the anode, which is the uppermost layer of the pad electrode, is formed at the same time as the anode is formed. Specifically, the top layer of the anode and the pad electrode is formed by performing a batch etching process in a state in which the ITO material, the silver alloy material, and the ITO material are stacked. Therefore, the uppermost layer of the pad electrode also has a structure in which an ITO layer, a silver alloy layer, and an ITO layer are stacked. Accordingly, a driving failure of the organic light emitting diode display may occur.

Specifically, in order to test the reliability of the organic light emitting diode display, the panel on which the organic light emitting diodes are formed is stored in a high temperature chamber for a certain period of time. In this case, due to the high temperature in the chamber, damage may occur to the silver alloy layer of the pad electrode, and the organic light emitting diode display may not be driven normally because the pad electrode does not come in contact with the external module.

In addition, when the silver alloy layer of the pad electrode is exposed to the outside, the silver alloy layer may react with moisture and air. In this case, a galvanic effect occurs between the silver alloy layer and the ITO layer. The galvanic effect is a phenomenon that occurs when two materials having a difference in electromotive force are simultaneously exposed to a corrosive solution. The material with high force: EMF) corrodes, and the pad electrode has insulation. Accordingly, a driving failure phenomenon in which the organic light emitting display device is not driven normally may occur because the pad electrode does not come into contact with the external module.

In addition, in the module process, the pad electrode may be under a high temperature and high pressure condition. When moisture is applied to the side of the silver alloy layer exposed to the outside under this high temperature and high pressure condition, a migration phenomenon occurs in the silver alloy layer. . Accordingly, a portion of the silver alloy layer may grow, and adjacent pad electrodes may be shorted, resulting in a driving failure phenomenon in which the organic light emitting diode display is not normally driven.

Accordingly, a method of configuring the pad electrode only with the same material as the source electrode and the drain electrode was considered without using a layer formed of the same material as the anode, which is the uppermost layer of the pad electrode. However, there is a problem that metal materials generally used as a source electrode and a drain electrode may be lost by an etchant used in an etching process for forming the anode.

Accordingly, the inventors of the present invention have invented an organic light emitting diode display having a new pad electrode structure for preventing damage that may be caused to the pad electrode in a top emission organic light emitting display device, and a method for manufacturing the same.

Accordingly, an object of the present invention is to provide an organic light emitting display device and a method of manufacturing an organic light emitting display device capable of preventing damage or corrosion to a pad electrode.

Another object of the present invention is to provide an organic light emitting diode display having improved reliability and a method of manufacturing the organic light emitting display device.

Another object of the present invention is to provide an organic light emitting diode display capable of minimizing a voltage drop that may occur in a top emission type organic light emitting display device.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

An organic light emitting display device according to an embodiment of the present invention is provided. An organic light emitting diode display includes a substrate defined by a display area and a pad area, a thin film transistor positioned on the substrate in the display area, and an active layer, a gate electrode, and a source electrode and a drain electrode, and electrically connected to the thin film transistor, and at least It is positioned on the substrate in an anode and a pad region comprising two conductive layers, and includes a pad electrode comprising a plurality of conductive layers, wherein the first conductive layer of the pad electrode is made of the same material as the source electrode and the drain electrode, The second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer.

According to another feature of the present invention, the third conductive layer of the pad electrode is formed to cover the second conductive layer of the pad electrode.

According to another feature of the present invention, the anode is characterized in that it comprises a lower ITO (Indium Tin Oxide) layer, a silver alloy (Ag alloy) layer and an upper ITO layer formed in a stacked structure.

According to another feature of the present invention, the anode further comprises a dummy layer electrically connected to the lower ITO layer in contact with the rear surface of the lower ITO layer.

According to another feature of the present invention, the dummy layer is composed of a plurality of layers, and the lower layer of the plurality of layers has a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer, and among the plurality of layers, a copper (Cu) layer is laminated. The upper layer is formed of a molybdenum-titanium (MoTi) alloy and is formed to cover the lower layer.

According to another feature of the present invention, the dummy layer is formed of the same material as the second conductive layer of the pad electrode and the third conductive layer of the pad electrode.

According to another feature of the present invention, the source electrode and the drain electrode have a structure in which a copper (Cu) layer is laminated on a molybdenum-titanium (MoTi) alloy layer.

According to another aspect of the present invention, the organic light emitting diode display further includes a first planarization layer formed to cover the thin film transistor.

According to another aspect of the present invention, the organic light emitting diode display further includes a first auxiliary wiring formed on the upper surface of the first planarization layer and positioned on the same plane as the anode.

According to another feature of the present invention, the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed of the same material as the first auxiliary wiring.

An organic light emitting display device according to another embodiment of the present invention is provided. An organic light emitting diode display includes a substrate defined by a display area and a pad area, a thin film transistor positioned on the substrate in the display area, and including an active layer, a gate electrode, and a source electrode and a drain electrode, located on the substrate in the display area, and a thin film A first planarization layer and a second planarization layer formed to cover the transistor, electrically connected to the thin film transistor, an anode formed on the upper surface of the second planarization layer, formed on the upper surface of the first planarization layer, and electrically connecting the thin film transistor and the anode A dummy electrode, a first auxiliary wiring formed of the same material on the same plane as the dummy electrode, and a pad electrode positioned on a pad area substrate and composed of a plurality of conductive layers, wherein the first conductive layer of the pad electrode is a source electrode and the same material as the drain electrode, wherein the second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer.

According to another feature of the present invention, the third conductive layer of the pad electrode is formed to cover the second conductive layer of the pad electrode.

According to another feature of the present invention, the source electrode and the drain electrode have a structure in which a copper (Cu) layer is laminated on a molybdenum-titanium (MoTi) alloy layer.

According to another feature of the present invention, the dummy electrode is composed of a plurality of electrodes, and an upper electrode of the plurality of electrodes is formed to cover the lower electrode.

According to another feature of the present invention, the second conductive layer of the pad electrode is formed of the same material as the lower electrode of the dummy electrode, and the third conductive layer of the pad electrode is formed of the same material as the upper electrode of the dummy electrode. do.

According to another feature of the present invention, the dummy electrode is composed of a single electrode, and the dummy electrode is formed of the same material as the second conductive layer of the pad electrode.

According to another aspect of the present invention, the organic light emitting diode display further comprises a second auxiliary line formed on the upper surface of the second planarization layer and electrically connected to the first auxiliary line.

According to another feature of the present invention, the second auxiliary wiring is characterized in that it is formed of the same material on the same plane as the anode.

According to another feature of the present invention, the anode is characterized in that it comprises a lower ITO (Indium Tin Oxide) layer, a silver alloy (Ag alloy) layer and an upper ITO layer formed in a stacked structure.

According to another feature of the present invention, the anode further comprises a dummy layer electrically connected to the dummy electrode in contact with the rear surface of the lower ITO layer.

According to another feature of the present invention, the dummy layer is formed of a molybdenum-titanium (MoTi) alloy.

A method of manufacturing an organic light emitting display device according to an embodiment of the present invention is provided. A method of manufacturing an organic light emitting display device includes: providing a substrate defined by a display region and a pad region; a thin film transistor including an active layer, a gate electrode, and a source electrode and a drain electrode on the display region of the substrate; and a pad region of the substrate Simultaneously forming a first conductive layer of a pad electrode on and simultaneously forming a second conductive layer and a third conductive layer of the pad electrode covering the first conductive layer of

According to another feature of the present invention, the manufacturing of an organic light emitting display device further includes forming a first auxiliary line on the first planarization layer, wherein the first auxiliary line is simultaneously formed of the same material as the dummy layer and the anode. characterized.

A method of manufacturing an organic light emitting display device according to another embodiment of the present invention is provided. A method of manufacturing an organic light emitting display device includes: providing a substrate defined by a display region and a pad region; a thin film transistor including an active layer, a gate electrode, and a source electrode and a drain electrode on the display region of the substrate; and a pad region of the substrate Simultaneously forming a first conductive layer of the pad electrode on the pad electrode, forming a first planarization layer to cover the thin film transistor, a dummy electrode electrically connected to the thin film transistor and first auxiliary wiring on the upper surface of the first planarization layer simultaneously forming, forming a second conductive layer and a third conductive layer of the pad electrode covering the first conductive layer of the pad electrode, and forming a second planarization layer to cover the dummy electrode and the first auxiliary wiring and forming an anode electrically connected to the dummy electrode and a second auxiliary line electrically connected to the first auxiliary line on an upper surface of the second planarization layer.

According to another feature of the present invention, the step of forming the second conductive layer and the third conductive layer of the pad electrode is performed simultaneously with the step of simultaneously forming the dummy electrode and the first auxiliary wiring.

According to another feature of the present invention, the second conductive layer of the pad electrode is formed of the same material as the dummy electrode and the first auxiliary wiring, and the third conductive layer of the pad electrode is formed of the same material as a part of the second auxiliary wiring. characterized in that

Details of other embodiments are included in the detailed description and drawings.

According to the present invention, it is possible to minimize damage or corrosion of the pad electrode by exposing the silver alloy layer of the pad electrode to the outside.

Also, the present invention can improve the reliability of the pad electrode and further improve the reliability of the organic light emitting diode display.

Also, according to the present invention, occurrence of a luminance non-uniformity phenomenon in a top emission type organic light emitting diode display device, particularly, a large area top emission type organic light emitting display device can be minimized.

The effect according to the present invention is not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a schematic plan view of an organic light emitting diode display according to an exemplary embodiment.
FIG. 2 is a schematic cross-sectional view of an organic light emitting diode display taken along lines II-II' and II''-II'' of FIG. 1 .
3 is a schematic cross-sectional view of an organic light emitting diode display according to another exemplary embodiment.
4 is a schematic cross-sectional view of an organic light emitting diode display according to another exemplary embodiment.
5 is a flowchart illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment.
6A to 6D are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment.
7 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to another exemplary embodiment.
8A to 8C are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment.
9A to 9C are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be embodied in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the art to which the present invention pertains It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative and the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is construed as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between two parts unless 'directly' is used.

Reference to a device or layer “on” another device or layer includes any intervening layer or other device directly on or in the middle of the other device or layer.

Although first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Like reference numerals refer to like elements throughout.

The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated component.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each embodiment may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic plan view of an organic light emitting diode display according to an exemplary embodiment. FIG. 2 is a schematic cross-sectional view of an organic light emitting diode display taken along lines II-II' and II''-II'' of FIG. 1 . 1 and 2 , the organic light emitting diode display 100 includes a substrate 110 , a thin film transistor 120 , an organic light emitting diode 130 , a pad electrode 150 , and a first auxiliary wire 140 . do. In FIG. 1 , only the pad area PA and the display area DA of the substrate 110 are schematically illustrated for convenience of description. In this specification, the organic light emitting display device 100 will be described as a top emission type organic light emitting display device.

The substrate 110 is a substrate 110 for supporting and protecting various components of the organic light emitting diode display 100 . The substrate 110 may be formed of an insulating material, for example, glass or plastic, but is not limited thereto, and may be formed of various materials.

The substrate 110 is defined by a display area DA and a pad area PA. That is, the substrate 110 has a display area DA and a pad area PA. The display area DA is an area in which an image is displayed in the organic light emitting diode display 100 , and the organic light emitting device 130 and various driving devices for driving the organic light emitting device 130 are disposed in the display area DA. . In FIG. 2 , only the driving thin film transistor 120 is shown among various driving elements for convenience of explanation. The pad area PA is an area in which the pad electrode 150 is formed, and is an area in which the pad electrode 150 and an external module, for example, a flexible printed circuit board (FPCB), a chip on film (COF), etc. are in contact. . As shown in FIG. 1 , the pad area PA may be defined on one side of the display area DA or on both sides of the display area DA.

The thin film transistor 120 is formed on the substrate 110 . A thin film transistor is formed in the display area DA of the substrate 110 . Specifically, the buffer layer 111 is formed on the substrate 110 , and the active layer 122 in which the channel of the thin film transistor 120 is formed is formed on the buffer layer 111 . The active layer 122 may be formed on the buffer layer 111 as shown in FIG. 2 , or may be directly formed on the substrate 110 when the buffer layer 111 is not used. A gate insulating layer 112 is formed on the active layer 122 to insulate the active layer 122 and the gate electrode 121 . A gate electrode 121 is formed on the gate insulating layer 112 . An interlayer insulating layer 113 is formed on the gate electrode 121 . The interlayer insulating layer 113 is formed on the entire surface of the substrate 110 and has a contact hole for opening a partial region of the active layer 122 . A source electrode 123 and a drain electrode 124 are formed on the interlayer insulating layer 113 , and each of the source electrode 123 and the drain electrode 124 is electrically connected to the active layer 122 through a contact hole. . The source electrode 123 and the drain electrode 124 may be formed of various conductive materials. For example, a copper (Cu) layer may be stacked on a molybdenum-titanium (MoTi) alloy layer. A passivation layer 114 for protecting the thin film transistor 120 is formed on the source electrode 123 and the drain electrode 124 . In FIG. 2 , for convenience of explanation, the thin film transistor 120 is illustrated as having a coplanar structure, but the present invention is not limited thereto, and the thin film transistor 120 may be formed in an inverted staggered structure. .

A first planarization layer 115 is formed on the thin film transistor 120 . The first planarization layer 115 is an insulating layer for planarizing an upper portion of the thin film transistor 120 . The first planarization layer 115 is formed only in the display area DA and is not formed in the pad area PA.

The organic light emitting diode 130 is formed on the first planarization layer 115 . The organic light emitting diode 130 includes an anode 137 , an organic light emitting layer 138 , and a cathode 139 .

The anode 137 is made of at least two conductive layers. Referring to FIG. 2 , the anode 137 includes a structure in which a lower ITO layer 131 , a silver alloy layer 132 , and an upper ITO layer 133 are stacked. The upper ITO layer 133 serves to transfer holes to the organic light emitting layer 138 formed on the anode 137 , and the silver alloy layer 132 transmits the light emitted from the organic light emitting layer 138 to the upper portion. It functions as a reflector that reflects the Various silver alloy conductive materials may be used as the silver alloy layer 132 , but the present invention is not limited thereto, and other conductive materials having excellent reflectivity may be formed between the upper ITO layer 133 and the lower ITO layer 131 .

The anode 137 is in contact with the rear surface of the lower ITO layer 131 and includes a dummy layer electrically connected to the lower ITO layer 131 . The dummy layer 134 is electrically connected to the thin film transistor 120 through a contact hole of the first planarization layer 115 . That is, the dummy layer 134 electrically connects the thin film transistor 120 and the lower ITO layer 131 .

The dummy layer 134 is composed of a plurality of layers. Referring to FIG. 2 , the dummy layer 134 includes a lower layer 135 and an upper layer 136 . The lower layer 135 may be formed in a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer, and the lower layer 135 is made of the same material as the source electrode 123 and the drain electrode 124 . may be formed. The upper layer 136 is formed on the lower layer 135 and may be formed to cover the lower layer 135 as shown in FIG. 2 . However, the present invention is not limited thereto, and the upper layer 136 may be formed only on the upper surface of the lower layer 135 . The upper layer 136 may be formed of a molybdenum-titanium (MoTi) alloy.

The first auxiliary wiring 140 is formed on the first planarization layer 115 . Specifically, the first auxiliary wiring 140 is positioned on the same plane as the anode 137 on the first planarization layer 115 . Referring to FIG. 2 , the first auxiliary wiring 140 includes a first layer 141 , a second layer 142 on the first layer 141 , a third layer 143 on the second layer 142 , and a second It consists of a fourth layer 144 on three layers and a fifth layer 145 on the fourth layer 144 . The first layer 141 of the first auxiliary wiring 140 is formed of the same material as the lower layer 135 of the dummy layer 134 of the anode 137 , and the second layer 142 of the first auxiliary wiring 140 is formed of the same material. ) is formed of the same material as the upper layer 136 of the dummy layer 134 of the anode 137 , and the third layer 143 of the first auxiliary wiring 140 is the lower ITO layer 131 of the anode 137 . The fourth layer 144 of the first auxiliary wiring 140 is formed of the same material as the silver alloy layer 132 of the anode 137 , and the fifth layer 144 of the first auxiliary wiring 140 is formed of the same material as Layer 145 may be formed of the same material as upper ITO layer 133 of anode 137 .

In the case of a top emission type organic light emitting diode display, a transparent electrode or a transflective electrode is used as a cathode to emit light emitted from the organic light emitting layer upward. In order to obtain sufficient light transmittance through the cathode, the cathode needs to be formed very thin. Therefore, so that the cathode is transparent, the cathode is made of ITO having a sufficiently thin thickness, or an alloy of silver (Ag) and magnesium (Mg), or the like. However, decreasing the thickness of the cathode increases the electrical resistance of the cathode electrode. Due to this, the reduction in the thickness of the cathode causes a voltage drop (ie, IR drop) in some portions of the organic light emitting display device, particularly, in the central portion, and causes non-uniform luminance across the screen. In particular, the voltage drop intensifies as the size of the display device increases. Accordingly, in the organic light emitting diode display 100 according to an embodiment of the present invention, the first auxiliary wiring 140 electrically connected to the cathode 139 is employed in the top emission type organic light emitting diode display 100 . voltage drop can be minimized.

A bank layer 116 is formed on the first planarization layer 115 . The bank layer 116 may be formed to cover the edges of the anode 137 and the first auxiliary wiring 140 . A partial region of the anode 137 opened by the bank layer 116 may be defined as a light emitting region.

An organic light emitting layer 138 is formed on the anode 137 . The organic emission layer 138 may be formed on a partial region of the anode 137 opened by the bank layer 116 . In this case, the organic emission layer 138 may be one of a red organic emission layer, a green organic emission layer, and a blue organic emission layer. Although not shown in FIG. 2 , the organic emission layer 138 may be a white organic emission layer. In this case, the white organic emission layer may be formed on the entire surface of the substrate 110 in the display area DA.

A cathode 139 is formed on the organic emission layer 138 . The cathode 139 is formed of a material having a high work function, and is formed on the entire surface of the substrate 110 in the display area DA. The cathode 139 is electrically connected to the first auxiliary wiring 140 . In FIG. 2 , a partial region of the first auxiliary wiring 140 is opened by the bank layer 116 and the cathode 139 and the first auxiliary wiring 140 are electrically connected to each other through the corresponding region. Without limitation, the cathode 139 and the first auxiliary wiring 140 may be electrically connected to each other in various ways.

Referring to FIG. 2 , a buffer layer 111 and an interlayer insulating layer 113 are formed on the substrate 110 in the pad area PA. When the buffer layer 111 is omitted, the interlayer insulating layer 113 may be directly formed on the substrate 110 .

The pad electrode 150 is formed on the substrate 110 in the pad area PA. Specifically, the pad electrode 150 is formed on the interlayer insulating layer 113 . The pad electrode 150 includes a plurality of conductive layers. Referring to FIG. 2 , the pad electrode 150 includes a first conductive layer 151 , a second conductive layer 152 on the first conductive layer 151 , and a third conductive layer 153 on the second conductive layer 152 . ) is formed from

The first conductive layer 151 of the pad electrode 150 is formed of the same material as the source electrode 123 and the drain electrode 124 of the thin film transistor 120 formed in the display area DA. That is, the first conductive layer 151 may be formed in a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer. A passivation layer 114 is formed on the first conductive layer 151 . The passivation layer 114 includes an opening, and the opening of the passivation layer 114 is located on a partial region of the first conductive layer 151 .

The second conductive layer 152 of the pad area PA is formed to cover the first conductive layer 151 of the pad area PA. The second conductive layer 152 is electrically connected to the first conductive layer 151 through the opening of the passivation layer 114 . The second conductive layer 152 may be formed of the same material as the lower layer 135 of the dummy layer 134 of the anode 137 and the first layer 141 of the first auxiliary wiring 140 . That is, the second conductive layer 152 may be formed in a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer.

The third conductive layer 153 of the pad area PA is formed to cover the first conductive layer 151 of the pad area PA. Also, the third conductive layer 153 of the pad area PA is formed to cover the second conductive layer 152 of the pad area PA. Referring to FIG. 2 , the third conductive layer 153 is formed to surround the side surface of the second conductive layer 152 so that the second conductive layer 152 is not exposed to the outside. The third conductive layer 153 may be formed of the same material as the upper layer 136 of the dummy layer 134 of the anode 137 and the second layer 142 of the first auxiliary wiring 140 . That is, the third conductive layer 153 may be formed of a molybdenum-titanium (MoTi) alloy layer.

In the organic light emitting diode display 100 according to an embodiment of the present invention, the silver alloy layer and the ITO layer used in the anode 137 are not used as the pad electrode 150 , and the pad electrode 150 is the source electrode 123 . ), a conductive material used as the drain electrode 124 and the first auxiliary wiring 140 is used as the pad electrode 150 . In addition, the third conductive layer 153 , which is the uppermost layer of the pad electrode 150 , is formed to cover the first conductive layer 151 and the second conductive layer 152 of the pad electrode 150 , and in particular, the third conductive layer 153 . The layer 153 is formed to cover both the top surface and the side surface of the second conductive layer 152 . Here, a molybdenum-titanium (MoTi) alloy, which is a material used as the third conductive layer 153, covers all of the second conductive layer 152 in which copper (Cu) is formed as the uppermost layer, thereby forming the second conductive layer 152 . The upper ITO layer 133, the silver alloy layer 132, and the lower ITO layer 131 of the anode 137 are not lost in the batch etching process, and the second conductive layer 152 reacts with moisture, etc. to form a poor pad It is possible to prevent the electrode 150 from being formed. In addition, since the second conductive layer 152 and the third conductive layer 153 of the pad electrode 150 are formed of the same material as the first auxiliary wiring 140 , the pad electrode 150 can be more easily formed. there is.

3 is a schematic cross-sectional view of an organic light emitting diode display according to another exemplary embodiment. Compared to the organic light emitting diode display 100 illustrated in FIGS. 1 and 2 , the organic light emitting diode display 300 illustrated in FIG. 3 includes an anode 337 , a dummy electrode 360 , and a first auxiliary wire 340 . It is different, except that the second auxiliary wiring 370 and the second planarization layer 317 are added, and other components are substantially the same, and thus a redundant description thereof will be omitted.

Referring to FIG. 3 , a dummy electrode 360 is formed on the first planarization layer 115 . The dummy electrode 360 is formed on the upper surface of the first planarization layer 315 to electrically connect the thin film transistor 120 and the anode 337 . The dummy electrode 360 includes a plurality of electrodes. Referring to FIG. 3 , the dummy electrode 360 includes a lower electrode 361 and an upper electrode 362 . The lower electrode 361 may be formed in a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer, and the lower electrode 361 is the same as the source electrode 123 and the drain electrode 124 . It may be formed of a material. The upper electrode 362 may be formed on the lower electrode 361 and may be formed to cover the lower electrode 361 as shown in FIG. 3 . However, the present invention is not limited thereto, and the upper electrode 362 may be formed only on the upper surface of the lower electrode 361 . The upper electrode 362 may be formed of a molybdenum-titanium (MoTi) alloy.

A first auxiliary wiring 340 is formed on the first planarization layer 115 . The first auxiliary wiring 340 is formed on the upper surface of the first planarization layer 115 and is formed of the same material on the same plane as the dummy electrode 360 . The first auxiliary wiring 340 includes a first layer 341 and a second layer 342 on the first layer 341 . The first layer 341 of the first auxiliary line 340 is formed of the same material as the lower electrode 361 of the dummy electrode 360 , and the second layer 342 of the first auxiliary line 340 is a dummy electrode. The upper electrode 362 of 360 may be formed of the same material.

A second planarization layer 317 is formed on the dummy electrode 360 and the first auxiliary wiring 340 . The second planarization layer 317 is an insulating layer for planarizing upper portions of the dummy electrode 360 and the first auxiliary wiring 340 . The second planarization layer 317 may be formed of the same material as the first planarization layer 315 . The second planarization layer 317 is formed only in the display area DA and is not formed in the pad area PA.

The anode 337 of the organic light emitting device 330 is formed on the second planarization layer 317 . The anode 337 is formed on the upper surface of the second planarization layer 317 , and is electrically connected to the thin film transistor 320 through the dummy electrode 360 . The anode 337 includes a structure in which a lower ITO layer 331 , a silver alloy layer 332 , and an upper ITO layer 333 are stacked.

A second auxiliary wiring 370 is formed on the second planarization layer 317 . Specifically, the second auxiliary line 370 is formed on the upper surface of the second planarization layer 317 and is electrically connected to the first auxiliary line 340 . The second auxiliary wiring 370 includes a first layer 371 , a second layer 372 on the first layer 371 , and a third layer 373 on the second layer 372 . The second auxiliary wiring 370 may be formed of the same material on the same plane as the anode 337 . That is, the first layer 371 of the second auxiliary wiring 370 is formed of the same material as the lower ITO layer 331 of the anode 337 , and the second layer 372 of the second auxiliary wiring 370 is formed of the same material as the lower ITO layer 331 of the anode 337 . The silver alloy layer 332 of the anode 337 is formed of the same material, and the third layer 373 of the second auxiliary wiring 370 is formed of the same material as the upper ITO layer 333 of the anode 337 . can In the organic light emitting diode display 300 according to another exemplary embodiment of the present invention, the first auxiliary wiring 340 and the second auxiliary wiring 370 electrically connected to the cathode 339 are employed to emit a top emission type organic light emitting diode. The resistance of the cathode 339 in the display device 300 may be further reduced, and thus uniform image quality characteristics may be secured.

A bank layer 316 is formed on the second planarization layer 317 , and an organic emission layer 338 of the organic light emitting diode 330 is formed on a partial region of the anode 337 opened by the bank layer 316 . do. The cathode 339 of the organic light emitting device 330 is formed on the organic light emitting layer 338 , and the cathode 339 passes through a partial region of the second auxiliary wiring 370 opened by the bank layer 316 . It is electrically connected to the auxiliary wiring 370 .

The pad electrode 350 is formed on the substrate 110 in the pad area PA. Specifically, the pad electrode 350 is formed on the interlayer insulating layer 113 . The pad electrode 350 includes a plurality of conductive layers. Referring to FIG. 3 , the pad electrode 350 includes a first conductive layer 351 , a second conductive layer 352 on the first conductive layer 351 , and a third conductive layer 353 on the second conductive layer 352 . ) is formed from The first conductive layer 351 of the pad electrode 350 is formed of the same material as the source electrode 123 and the drain electrode 124 of the thin film transistor 320 formed in the display area DA. The second conductive layer 352 of the pad area PA is formed of the same material as the lower electrode 361 of the dummy electrode 360 and the first layer 341 of the first auxiliary wiring 340, and the pad area ( The third conductive layer 353 of the PA) is formed of the same material as the upper electrode 362 of the dummy electrode 360 and the second layer 342 of the first auxiliary wiring 340 . Compared to the pad electrode 350 of FIG. 2 , the pad electrode 350 of FIG. 3 includes only the components formed of the same material as the second conductive layer 352 and the third conductive layer 353 of the pad electrode 350 . Since these are only different, duplicate description is abbreviate|omitted.

In the organic light emitting diode display 300 according to another embodiment of the present invention, the silver alloy layer and the ITO layer used in the anode 337 are not used as the pad electrode 350 , and the pad electrode 350 is the source electrode 123 . ) and the same material as the drain electrode 124 and a conductive material used for the first auxiliary wiring 340 are used as the pad electrode 350 . In addition, a third conductive layer 353 , which is the uppermost layer of the pad electrode 350 , is formed to cover the first conductive layer 351 and the second conductive layer 352 of the pad electrode 350 , and in particular, the third conductive layer 353 . The layer 353 is formed to cover both the top surface and the side surface of the second conductive layer 352 . Here, a molybdenum-titanium (MoTi) alloy, which is a material used as the third conductive layer 353, covers all of the second conductive layer 352 in which copper (Cu) is formed as the uppermost layer, so that the second conductive layer 352 is The upper ITO layer 333, the silver alloy layer 332, and the lower ITO layer 331 of the anode 337 are not lost in the batch etching process, and the second conductive layer 352 reacts with moisture, etc. to form a poor pad. It is possible to prevent the electrode 350 from being formed. In addition, since the second conductive layer 352 and the third conductive layer 353 of the pad electrode 350 are formed of the same material as the first auxiliary wiring 340 , the pad electrode 350 can be more easily formed. there is.

4 is a schematic cross-sectional view of an organic light emitting diode display according to another exemplary embodiment. The organic light emitting diode display 400 shown in FIG. 4 has an anode 437 , a dummy electrode 360 , a first auxiliary line 440 , and a second auxiliary line 440 compared to the organic light emitting diode display 300 shown in FIG. 3 . Although the wiring 470 is different, other components are substantially the same, and thus a redundant description will be omitted.

Referring to FIG. 4 , a dummy electrode 460 is formed on the first planarization layer 115 . The dummy electrode 460 is formed on the upper surface of the first planarization layer 115 to electrically connect the thin film transistor 120 and the anode 437 . The dummy electrode 460 is configured as a single electrode. The dummy electrode 460 may be formed in a structure in which a molybdenum-titanium (MoTi) alloy layer, a copper (Cu) layer, and a molybdenum-titanium (MoTi) alloy layer are stacked, and the dummy electrode 460 is a source electrode 423 . And it may be formed of the same material as the drain electrode 424 .

A first auxiliary wiring 440 is formed on the first planarization layer 115 . The first auxiliary wiring 440 is formed on the upper surface of the first planarization layer 115 and is formed of the same material on the same plane as the dummy electrode 460 . The first auxiliary wiring 440 is configured as a single layer. The first auxiliary wiring 440 may be formed of the same material as the dummy electrode 460 .

A second planarization layer 417 is formed on the dummy electrode 460 and the first auxiliary line 440 . The second planarization layer 417 is an insulating layer for planarizing upper portions of the dummy electrode 460 and the first auxiliary line 440 . The second planarization layer 417 may be formed of the same material as the first planarization layer 415 . The second planarization layer 417 is formed only in the display area DA and is not formed in the pad area PA.

The anode 437 of the organic light emitting device 430 is formed on the second planarization layer 417 . The anode 437 is formed on the upper surface of the second planarization layer 417 , and is electrically connected to the thin film transistor 420 through the dummy electrode 460 . The anode 437 includes a structure in which a dummy layer 434 , a lower ITO layer 431 , a silver alloy layer 432 , and an upper ITO layer 433 are stacked. The dummy layer 434 of the anode 437 is formed to be in contact with the rear surface of the lower ITO layer 431 and is electrically connected to the dummy electrode 460 . The dummy layer 434 of the anode 437 may be formed of a molybdenum-titanium (MoTi) alloy.

A second auxiliary wiring 470 is formed on the second planarization layer 417 . Specifically, the second auxiliary wiring 470 is formed on the upper surface of the second planarization layer 417 and is electrically connected to the first auxiliary wiring 440 . The second auxiliary wiring 470 is formed on the first layer 471 , the second layer 472 on the first layer 471 , the third layer 473 on the second layer 472 , and the third layer 473 on the third layer 473 . Consists of a fourth layer (474). The second auxiliary wiring 470 may be formed of the same material on the same plane as the anode 437 . That is, the first layer 471 of the second auxiliary wiring 470 is formed of the same material as the lower ITO layer 431 of the anode 437 , and the second layer 472 of the second auxiliary wiring 470 is The silver alloy layer 432 of the anode 437 is formed of the same material, and the third layer 473 of the second auxiliary wiring 470 is formed of the same material as the upper ITO layer 433 of the anode 437 and , the fourth layer 474 of the second auxiliary wiring 470 may be formed of the same material as the dummy layer 434 of the anode 437 . In the organic light emitting diode display 400 according to another embodiment of the present invention, the first auxiliary wiring 440 and the second auxiliary wiring 470 electrically connected to the cathode 439 are employed to employ a top emission type organic light emitting diode display. It is possible to solve a luminance non-uniformity problem that may occur in the light emitting display device 400 .

A bank layer 416 is formed on the second planarization layer 417 , and an organic light emitting layer 438 of the organic light emitting device 430 is formed on a partial region of the anode 437 opened by the bank layer 416 . do. A cathode 439 of the organic light emitting device 430 is formed on the organic light emitting layer 438 , and the cathode 439 is formed through a partial region of the second auxiliary wiring 470 opened by the bank layer 416 . It is electrically connected to the auxiliary wiring 470 .

The pad electrode 450 is formed on the substrate 110 in the pad area PA. Specifically, the pad electrode 450 is formed on the interlayer insulating layer 113 . The pad electrode 450 is formed of a first conductive layer 451 , a second conductive layer 452 on the first conductive layer 451 , and a third conductive layer 453 on the second conductive layer 452 . The first conductive layer 451 of the pad electrode 450 is formed of the same material as the source electrode 423 and the drain electrode 424 of the thin film transistor 420 formed in the display area DA. The second conductive layer 452 of the pad area PA is formed of the same material as the dummy electrode 460 and the first auxiliary wiring 440 , and the third conductive layer 453 of the pad area PA is formed of an anode ( The dummy layer 434 of 437 and the fourth layer 474 of the second auxiliary wiring 470 are formed of the same material. Compared to the pad electrode 350 of FIG. 3 , the pad electrode 450 of FIG. 4 includes only the components formed of the same material as the second conductive layer 452 and the third conductive layer 453 of the pad electrode 450 . Since these are only different, duplicate description is abbreviate|omitted.

In the organic light emitting diode display 400 according to another embodiment of the present invention, the silver alloy layer 432 and the ITO layer used in the anode 437 are not used as the pad electrode 450 , and the pad electrode 450 is a source. The same material as the electrode 423 and the drain electrode 424 and a conductive material used as the first auxiliary wiring 440 are used as the pad electrode 450 . In addition, a third conductive layer 453 , which is the uppermost layer of the pad electrode 450 , is formed to cover the first conductive layer 451 and the second conductive layer 452 of the pad electrode 450 , and in particular, the third conductive layer 453 . The layer 453 is formed to cover both the top surface and the side surface of the second conductive layer 452 . Here, a molybdenum-titanium (MoTi) alloy, which is a material used as the third conductive layer 453, covers all of the second conductive layer 452 in which copper (Cu) is formed as the uppermost layer, so that the second conductive layer 452 is To prevent loss in the batch etching process of the upper ITO layer 433, the silver alloy layer 432, and the lower ITO layer 431 of the anode 437, the second conductive layer 452 reacts with moisture, etc. to cause poor pad It is possible to prevent the electrode 450 from being formed. In addition, the second conductive layer 452 and the third conductive layer 453 of the pad electrode 450 are formed of the same material as the first auxiliary wiring 440 and the second auxiliary wiring 470 to facilitate padding. An electrode 450 may be formed.

5 is a flowchart illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment. 6A to 6D are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment. 6A to 6D are process cross-sectional views illustrating a method of manufacturing the organic light emitting display device 100 illustrated in FIGS. 1 and 2 , and redundant descriptions of components described with reference to FIGS. 1 and 2 are omitted. do.

First, a substrate 110 defined by a display area DA and a pad area PA is provided ( S50 ), and an active layer 122 and a gate electrode 121 are provided on the display area DA of the substrate 110 . , and simultaneously forming the first conductive layer 151 of the pad electrode 150 on the thin film transistor 120 including the source electrode 123 and the drain electrode 124 and the pad area PA of the substrate 110 . do (S51).

Referring to FIG. 6A , the buffer layer 111 is formed on the substrate 110 in which the display area DA and the pad area PA are defined. The buffer layer 111 is formed on the display area DA and the pad area PA.

The thin film transistor 120 is formed on the display area DA of the substrate 110 . An active layer 122 is formed on the buffer layer 111 , and a gate insulating layer 112 and a gate electrode 121 are formed on the active layer 122 . When the gate insulating layer 112 and the gate electrode 121 are formed, the material for the gate insulating layer and the material for the gate electrode are formed on the entire surface of the substrate 110 , and thereafter, the material for the insulating layer and the material for the gate electrode are simultaneously patterned to insulate the gate. A layer 112 and a gate electrode 121 are formed. An interlayer insulating layer 113 is formed on the gate insulating layer 112 and the gate electrode 121 . The interlayer insulating layer 113 is formed on the display area DA and the pad area PA. A contact hole for electrically connecting the source electrode 123 and the drain electrode 124 to the active layer 122 is formed in the interlayer insulating layer 113 . Thereafter, a material for a source electrode and a drain electrode is formed on the entire surface of the substrate 110 , and a source electrode 123 and a drain electrode 124 are formed by patterning the material for the source electrode and the drain electrode. In this case, the first conductive layer 151 of the pad electrode 150 is formed on the pad area PA of the substrate 110 . That is, when the material for the source electrode and the drain electrode formed on the entire surface of the substrate 110 is patterned, the first conductive layer 151 of the pad electrode 150 is left in the pad area PA, so that the source electrode 123, The first conductive layer 151 of the drain electrode 124 and the pad electrode 150 may be simultaneously formed of the same material.

Next, a first planarization layer 115 is formed to cover the thin film transistor 120 ( S52 ), and a dummy layer of the anode 137 electrically connected to the thin film transistor 120 is formed on the upper surface of the first planarization layer 115 ( S52 ). 134) and the second conductive layer 152 and the third conductive layer 153 of the pad electrode 150 covering the first conductive layer 151 of the pad electrode 150 are simultaneously formed (S53).

Referring to FIG. 6B , a passivation layer 114 for protecting the thin film transistor 120 is formed on the thin film transistor 120 . The passivation layer 114 is formed in both the display area DA and the pad area PA.

Next, a first planarization layer 115 for planarizing an upper portion of the thin film transistor 120 is formed on the thin film transistor 120 . The first planarization layer 115 is formed only in the display area DA of the substrate 110 .

Subsequently, the lower layer 135 of the dummy layer 134 of the anode 137 and the first layer 141 of the first auxiliary wiring 140 are formed on the first planarization layer 115 in the display area DA. , the second conductive layer 152 of the pad electrode 150 is formed on the interlayer insulating layer 113 in the pad area PA. Specifically, a material for the lower layer of the dummy layer 134 is formed on the first planarization layer 115 of the display area DA and the interlayer insulating layer 113 of the pad area PA. That is, the material for the lower layer of the dummy layer 134 is formed on the entire surface of the substrate 110 . Thereafter, the material for the lower layer of the dummy layer 134 is patterned to form the lower layer 135 of the dummy layer 134 , the first layer 141 of the first auxiliary wiring 140 , and the second conductivity of the pad electrode 150 . Layer 152 is simultaneously formed of the same material.

Subsequently, referring to FIG. 6C , an upper layer 136 of the dummy layer 134 is formed on the lower layer 135 of the dummy layer 134 in the display area DA, and the first auxiliary line 140 is A second layer 142 is formed on the layer 141 . In addition, a third conductive layer 153 is formed on the second conductive layer 152 of the pad electrode 150 in the pad area PA. Specifically, passivation of the first planarization layer 115 of the display area DA, the lower layer 135 of the dummy layer 134 , the first layer 141 of the first auxiliary wiring 140 , and the pad area PA A material for an upper layer of the dummy layer 134 is formed on the layer 114 and the second conductive layer 152 of the pad electrode 150 . That is, the material for the upper layer of the dummy layer 134 is formed on the entire surface of the substrate 110 . Thereafter, a material for the upper layer of the dummy layer 134 is patterned to form the upper layer 136 of the dummy layer 134 , the second layer 142 of the first auxiliary wiring 140 , and the third conductivity of the pad electrode 150 . Layer 153 is simultaneously formed of the same material. The third conductive layer 153 of the pad electrode 150 is formed to cover the second conductive layer 152 of the pad electrode 150 .

Next, the remaining layers of the anode 137 are formed on the dummy layer 134 of the anode 137 (S54).

Referring to FIG. 6D , an ITO material, a silver alloy material, and an ITO material are sequentially formed on the dummy layer 134 of the anode 137 and the second layer 142 of the first auxiliary wiring 140 . Here, the ITO material, the silver alloy material, and the ITO material are formed not only in the display area DA of the substrate 110 but also in the pad area PA of the substrate 110 . Then, the lower ITO layer 131, the silver alloy layer 132 and the remaining layer of the anode 137 on the dummy layer 134 of the anode 137 by batch etching the ITO material, the silver alloy material, and the ITO material. An upper ITO layer 133 is formed. In addition, in the batch etching process, the third layer 143 , the fourth layer 144 , and the fifth layer 145 of the first auxiliary wiring 140 are formed by the lower ITO layer 131 and the silver alloy layer of the anode 137 . 132 and the upper ITO layer 133 are formed at the same time.

Next, the bank layer 116 is formed to cover the edges of the anode 137 and the first auxiliary electrode, and the organic emission layer 138 and the cathode 139 are sequentially formed.

In the method of manufacturing an organic light emitting display device according to an embodiment of the present invention, the pad electrode 150 may be simultaneously formed when the first auxiliary wiring 140 is formed. Accordingly, the pad electrode 150 may be formed without adding a separate process for forming the pad electrode 150 . In addition, the third conductive layer 153 of the pad electrode 150 formed of a molybdenum-titanium (MoTi) alloy without using the silver alloy layer 132 as the pad electrode 150 is the second conductive layer of the pad electrode 150 . It is formed to cover the layer 152 , and it is possible to secure the pad electrode 150 having improved reliability.

7 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to another exemplary embodiment. 8A to 8C are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment. 8A to 8C are cross-sectional views illustrating a method of manufacturing the organic light emitting diode display 300 illustrated in FIG. 3 , and redundant descriptions of components described with reference to FIG. 3 will be omitted.

First, the substrate 110 defined by the display area DA and the pad area PA is provided ( S70 ), and the active layer 122 and the gate electrode 121 are provided on the display area DA of the substrate 110 . , and simultaneously forming the first conductive layer 351 of the pad electrode 350 on the thin film transistor 120 including the source electrode 123 and the drain electrode 124 and the pad area PA of the substrate 110 . and (S71), a first planarization layer 115 is formed to cover the thin film transistor 120 (S72). Steps S70, S71 and S72 are substantially the same as steps S60, S61 and S62, and thus redundant descriptions are omitted.

Subsequently, the dummy electrode 360 and the first auxiliary wiring 340 electrically connected to the thin film transistor 120 are simultaneously formed on the upper surface of the first planarization layer 115 ( S73 ), and the first conductivity of the pad electrode 350 is performed ( S73 ). A second conductive layer 352 and a third conductive layer 353 of the pad electrode 350 covering the layer 351 are formed (S74).

Referring to FIG. 8A , the lower electrode 361 of the dummy electrode 360 and the first layer 341 of the first auxiliary wiring 340 are formed on the first planarization layer 115 in the display area DA. , a second conductive layer 352 of the pad electrode 350 is formed on the interlayer insulating layer 113 in the pad area PA. Specifically, a material for the lower electrode of the dummy electrode 360 is formed on the first planarization layer 115 of the display area DA and the interlayer insulating layer 113 of the pad area PA. That is, a material for the lower electrode of the dummy electrode 360 is formed on the entire surface of the substrate 110 . Thereafter, the material for the lower electrode of the dummy electrode 360 is patterned to form the lower electrode 361 of the dummy electrode 360 , the first layer 341 of the first auxiliary wiring 340 , and the first layer of the pad electrode 350 . Two conductive layers 352 are simultaneously formed of the same material.

Subsequently, referring to FIG. 8B , an upper electrode 362 is formed on the lower electrode 361 of the dummy electrode 360 in the display area DA, and the first layer 341 of the first auxiliary line 340 is formed. A second layer 342 is formed thereon. Also, a third conductive layer 353 is formed on the second conductive layer 352 of the pad electrode 350 in the pad area PA. Specifically, the first planarization layer 115 of the display area DA, the lower electrode 361 of the dummy electrode 360, the first layer 341 of the first auxiliary wiring 340, and the pad area PA A material for the upper electrode of the dummy electrode 360 is formed on the passivation layer 114 and the second conductive layer 352 of the pad electrode 350 . That is, the material for the upper electrode of the dummy electrode 360 is formed on the entire surface of the substrate 110 . Thereafter, the material for the upper electrode of the dummy electrode 360 is patterned to form the second layer 342 of the upper electrode 362 of the dummy electrode 360 , the second layer 342 of the first auxiliary wiring 340 , and the pad electrode 350 . Three conductive layers 353 are simultaneously formed of the same material. The third conductive layer 353 of the pad electrode 350 is formed to cover the second conductive layer 352 of the pad electrode 350 .

Next, a second planarization layer 317 is formed to cover the dummy electrode 360 and the first auxiliary wiring 340 ( S75 ), and is electrically connected to the dummy electrode 360 on the upper surface of the second planarization layer 317 . A second auxiliary line 370 electrically connected to the anode 337 and the first auxiliary line 340 is formed (S76).

Referring to FIG. 8C , a second planarization layer 317 is formed to planarize upper portions of the dummy electrode 360 and the first auxiliary wiring 340 . The second planarization layer 317 is formed only in the display area DA.

Subsequently, an ITO material, a silver alloy material, and an ITO material are sequentially formed on the second planarization layer 317 . Here, the ITO material, the silver alloy material, and the ITO material are formed not only in the display area DA of the substrate 110 but also in the pad area PA of the substrate 110 . Thereafter, the ITO material, the silver alloy material and the ITO material are batch etched, and the lower ITO layer 331 , the silver alloy layer 332 and the upper ITO layer 333 of the anode 337 on the second planarization layer 317 . ) is formed, and in the batch etching process, the first layer 371 , the second layer 372 and the third layer 373 of the second auxiliary wiring 370 are formed on the lower ITO layer 331 of the anode 337 , The silver alloy layer 332 and the upper ITO layer 333 are simultaneously formed.

In the method of manufacturing an organic light emitting diode display according to another embodiment of the present invention, the pad electrode 350 may be simultaneously formed when the first auxiliary wiring 340 is formed. Accordingly, the pad electrode 350 may be formed without adding a separate process for forming the pad electrode 350 . In addition, the third conductive layer 353 of the pad electrode 350 formed of a molybdenum-titanium (MoTi) alloy without using the silver alloy layer 332 as the pad electrode 350 is the second conductive layer of the pad electrode 350 . It is formed to cover the layer 352 , and it is possible to secure the pad electrode 350 having improved reliability.

9A to 9C are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to another exemplary embodiment. 9A to 9C are cross-sectional views illustrating a method of manufacturing the organic light emitting diode display 400 illustrated in FIG. 4 , and a redundant description of components described with reference to FIG. 4 will be omitted.

First, the substrate 110 defined by the display area DA and the pad area PA is provided ( S70 ), and the active layer 122 and the gate electrode 121 are provided on the display area DA of the substrate 110 . , and simultaneously forming the first conductive layer 451 of the pad electrode 450 on the thin film transistor 120 including the source electrode 123 and the drain electrode 124 and the pad area PA of the substrate 110 . and (S71), a first planarization layer 115 is formed to cover the thin film transistor 120 (S72). Steps S70, S71 and S72 are substantially the same as steps S60, S61 and S62, and thus redundant descriptions are omitted.

Subsequently, a dummy electrode 460 electrically connected to the thin film transistor 120 and a first auxiliary wiring 440 are simultaneously formed on the upper surface of the first planarization layer 115 ( S73 ), and the first conductivity of the pad electrode 450 is performed ( S73 ). The second conductive layer 452 and the third conductive layer 453 of the pad electrode 450 covering the layer 451 are formed (S74), and the dummy electrode 460 and the first auxiliary wiring 440 are covered. A second planarization layer 417 is formed ( S75 ), and an anode 437 electrically connected to the dummy electrode 460 and a second electrically connected to the first auxiliary wire 440 are formed on the upper surface of the second planarization layer 417 . An auxiliary wiring 470 is formed (S76).

Referring to FIG. 9A , the dummy electrode 460 and the first auxiliary wiring 440 are formed on the first planarization layer 115 in the display area DA, and the interlayer insulating layer 113 in the pad area PA. A second conductive layer 452 of the pad electrode 450 is formed thereon. In detail, a material for a dummy electrode is formed on the first planarization layer 115 of the display area DA and the interlayer insulating layer 113 of the pad area PA. That is, a material for a dummy electrode is formed on the entire surface of the substrate 410 . Thereafter, the dummy electrode material is patterned to simultaneously form the dummy electrode 460 , the first auxiliary wiring 440 , and the second conductive layer 452 of the pad electrode 450 using the same material.

Next, referring to FIG. 9B , a second planarization layer 417 is formed to planarize upper portions of the dummy electrode 460 and the first auxiliary wiring 440 . The second planarization layer 417 is formed only in the display area DA.

Subsequently, the dummy layer 434 of the anode 437 and the fourth layer 474 of the second auxiliary wiring 470 are formed on the second planarization layer 417 in the display area DA. In addition, a third conductive layer 453 is formed on the second conductive layer 452 of the pad electrode 450 in the pad area PA. Specifically, a dummy of the anode 437 is formed on the second planarization layer 417 of the display area DA, the passivation layer 414 of the pad area PA, and the second conductive layer 452 of the pad electrode 450 . A layered material is formed. That is, the material for the dummy layer of the anode 437 is formed on the entire surface of the substrate 410 . Thereafter, the dummy layer 434 of the anode 437, the fourth layer 474 of the second auxiliary wiring 470, and the third conductive layer 453 of the pad electrode 450 are simultaneously formed by patterning the material for the dummy layer. formed of the same material. The third conductive layer 453 of the pad electrode 450 is formed to cover the second conductive layer 452 of the pad electrode 450 .

Subsequently, an ITO material, a silver alloy material, and an ITO material are sequentially formed on the second planarization layer 417 . Here, the ITO material, the silver alloy material, and the ITO material are formed not only in the display area DA of the substrate 410 but also in the pad area PA of the substrate 110 . Then, the ITO material, the silver alloy material, and the ITO material are batch etched, and the lower ITO layer 431 of the anode 437, the silver alloy layer 432 and the upper ITO on the dummy layer 434 of the anode 437. A layer 433 is formed, and the first layer 371 , the second layer 372 , and the third layer of the second auxiliary line 470 are formed on the fourth layer of the second auxiliary line 470 in a batch etching process. 373 is formed simultaneously with the lower ITO layer 431 , the silver alloy layer 432 , and the upper ITO layer 433 of the anode 437 .

In the method of manufacturing an organic light emitting diode display according to another embodiment of the present invention, the pad electrode 450 may be simultaneously formed when the first auxiliary wiring 440 is formed. Accordingly, the pad electrode 450 may be formed without adding a separate process for forming the pad electrode 450 . In addition, the third conductive layer 453 of the pad electrode 450 formed of a molybdenum-titanium (MoTi) alloy without using the silver alloy layer 432 as the pad electrode 450 is the second conductive layer of the pad electrode 450 . It is formed to cover the layer 452 , and it is possible to secure the pad electrode 450 having improved reliability.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100, 300, 400: organic light emitting display device
110: substrate
111: buffer layer
112: gate insulating layer
113: interlayer insulating layer
114: passivation layer
115: first planarization layer
116, 316, 416: bank layer
317, 417: second planarization layer
120: thin film transistor
121: gate electrode
122: active layer
123: source electrode
124: drain electrode
130, 330, 430: organic light emitting device
131, 331, 431: lower ITO layer
132, 332, 432: silver alloy layer
133, 333, 433: upper ITO layer
134, 434: dummy layer
135: lower layer
136: upper layer
137, 337, 437: anode
138, 338, 438: organic light emitting layer
139, 339, 439: cathode
140, 340, 440: first auxiliary wiring
141, 341: a first layer of a first auxiliary wiring
142, 342: second layer of first auxiliary wiring
143: third layer of first auxiliary wiring
144: fourth layer of first auxiliary wiring
145: fifth layer of first auxiliary wiring
150, 350, 450: pad electrode
151, 351, 451: first conductive layer
152, 352, 452: second conductive layer
153, 353, 453: third conductive layer
360, 460: dummy electrode
361: lower electrode
362: upper electrode
370, 470: second auxiliary wiring
371, 471: the first layer of the second auxiliary wiring
372, 472: second layer of second auxiliary wiring
373, 473: a third layer of the second auxiliary wiring
474: fourth layer of second auxiliary wiring
DA: display area
PA: pad area

Claims (26)

a substrate defined by a display area and a pad area;
a thin film transistor positioned on the substrate in the display area and including an active layer, a gate electrode, and a source electrode and a drain electrode;
an organic light emitting device electrically connected to the thin film transistor and including an anode including at least two conductive layers and a cathode on the anode;
a first auxiliary line disposed on the thin film transistor and electrically connected to the cathode; and
and a pad electrode positioned on the substrate in the pad region and composed of a plurality of conductive layers,
The first conductive layer of the pad electrode is made of the same material as the source electrode and the drain electrode,
The second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer,
The first auxiliary wiring is
a first layer made of the same material as the second conductive layer of the pad electrode; and
and a second layer made of the same material as the third conductive layer of the pad electrode and in contact with an upper surface and a side surface of the first layer;
The anode includes an upper ITO layer as the uppermost layer, a silver alloy layer under the upper ITO layer, and a lower ITO layer under the silver alloy layer,
and the third conductive layer and the second layer are formed of a material different from that of the upper ITO layer, the silver alloy layer, and the lower ITO layer, the source electrode, and the drain electrode of the anode. . According to claim 1,
and the third conductive layer of the pad electrode is formed to cover an upper surface and a side surface of the second conductive layer of the pad electrode. delete According to claim 1,
and the anode further includes a dummy layer electrically connected to the lower ITO layer in contact with a rear surface of the lower ITO layer. 5. The method of claim 4,
The dummy layer is composed of a plurality of layers,
A lower layer of the plurality of layers has a structure in which a copper (Cu) layer is laminated on a molybdenum-titanium (MoTi) alloy layer,
An upper layer of the plurality of layers is formed of a molybdenum-titanium (MoTi) alloy and is formed to cover the lower layer. 5. The method of claim 4,
and the dummy layer is formed of the same material as the second conductive layer of the pad electrode and the third conductive layer of the pad electrode. According to claim 1,
and the source electrode and the drain electrode have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer. According to claim 1,
and a first planarization layer formed to cover the thin film transistor. 9. The method of claim 8,
and the first auxiliary wiring is formed on an upper surface of the first planarization layer. delete a substrate defined by a display area and a pad area;
a thin film transistor positioned on the substrate in the display area and including an active layer, a gate electrode, and a source electrode and a drain electrode;
a first planarization layer and a second planarization layer disposed on the substrate in the display area and formed to cover the thin film transistor;
an organic light emitting device electrically connected to the thin film transistor and including an anode formed on an upper surface of the second planarization layer and a cathode on the anode;
a dummy electrode formed on an upper surface of the first planarization layer and electrically connecting the thin film transistor and the anode;
a first auxiliary wiring formed of the same material on the same plane as the dummy electrode; and
and a pad electrode positioned on the substrate in the pad region and composed of a plurality of conductive layers,
The first conductive layer of the pad electrode is made of the same material as the source electrode and the drain electrode,
The second conductive layer of the pad electrode and the third conductive layer of the pad electrode are formed to cover the first conductive layer,
The first auxiliary wiring is
a first layer made of the same material as the second conductive layer of the pad electrode; and
and a second layer made of the same material as the third conductive layer of the pad electrode and in contact with an upper surface and a side surface of the first layer;
and the third conductive layer and the second layer are made of a material different from that of the anode, the source electrode, and the drain electrode. 12. The method of claim 11,
and the third conductive layer of the pad electrode is formed to cover an upper surface and a side surface of the second conductive layer of the pad electrode. 12. The method of claim 11,
and the source electrode and the drain electrode have a structure in which a copper (Cu) layer is stacked on a molybdenum-titanium (MoTi) alloy layer. 12. The method of claim 11,
The dummy electrode is composed of a plurality of electrodes,
An upper electrode of the plurality of electrodes is formed to cover an upper surface and a side surface of the lower electrode. 15. The method of claim 14,
The second conductive layer of the pad electrode is formed of the same material as the lower electrode of the dummy electrode,
The third conductive layer of the pad electrode is formed of the same material as the upper electrode of the dummy electrode. delete 12. The method of claim 11,
and a second auxiliary line formed on an upper surface of the second planarization layer and electrically connected to the first auxiliary line. 18. The method of claim 17,
and the second auxiliary wiring is formed of the same material on the same plane as the anode. 12. The method of claim 11,
The organic light emitting display device of claim 1, wherein the anode has a structure in which a lower Indium Tin Oxide (ITO) layer, an Ag alloy layer, and an upper ITO layer are stacked. delete delete delete delete delete delete delete

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